CN113981524A - Water-cooled screen, monocrystalline silicon growth device and monocrystalline silicon growth method - Google Patents
Water-cooled screen, monocrystalline silicon growth device and monocrystalline silicon growth method Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000498 cooling water Substances 0.000 claims abstract description 126
- 238000001816 cooling Methods 0.000 claims abstract description 114
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 239000007788 liquid Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000008400 supply water Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 19
- 230000005855 radiation Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000004927 fusion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
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- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The embodiment of the invention discloses a water-cooling screen, which comprises: the cooling water channel at least comprises two cooling water channel branches, and the cooling water channel branches are mutually independent; the cooling water channel branch is in a low-temperature state at the corresponding position when the silicon rod rises to a certain height by controlling the water supply time or the water supply flow rate of the cooling water. The water-cooling screen provided by the invention can supply water by time-sharing components, so that the heat exchange rate of the water-cooling screen is improved, the axial temperature gradient of the silicon rod during growth is increased, and the growth speed of monocrystalline silicon is effectively improved. The embodiment of the invention also discloses a monocrystalline silicon growth device and a monocrystalline silicon growth method.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon manufacturing equipment, in particular to a water-cooled screen, a monocrystalline silicon growing device and a monocrystalline silicon growing method.
Background
At present, the cost of raw materials and auxiliary materials in the photovoltaic industry is high, and the cost reduction and the flat price surfing of the photovoltaic industry are seriously restricted. Under the background, the industry develops towards the direction of large-size crystal bars and high output ratio of silicon rods so as to achieve the purposes of cost reduction and efficiency improvement.
In the process of preparing the monocrystalline silicon by the Czochralski method at present, how to increase the growth speed of the monocrystalline silicon so as to increase the output of the silicon rod per unit time is a key problem to be overcome. In the process of growing the monocrystalline silicon, the growth speed of the monocrystalline silicon is greatly influenced by the axial temperature gradient of the crystal near the crystal interface, and the larger the temperature gradient of the crystal near the crystal interface is, the faster the monocrystalline silicon grows. Since the transformation of silicon from a liquid to a solid requires the release of a large amount of heat, one way to increase the axial temperature gradient of the crystal near the crystallization interface is to enable the crystal to dissipate heat quickly. In the prior art, crystal heat dissipation is mainly realized through a water-cooling screen structure. Because the water screen structure can not contact with crystal or silicon liquid, the heat transmission between crystal and water screen mainly depends on the radiation mode, that is, the inner surface of water screen absorbs heat radiation and transmits the absorbed part of heat to the internal circulating water.
In carrying out the present invention, the applicant has found that the following problems exist in the prior art: at present, inclined and integral water-cooling screens are commonly used in the industry, and a set of water supply and return system is used for cooling water in the water-cooling screens. In the silicon rod growth process, cooling water on the lower portion of the water-cooling screen exchanges heat with the silicon rod to be heated, the heated cooling water exchanges heat with cooling water on the upper portion of the water-cooling screen, the temperature of the cooling water on the upper portion of the water-cooling screen is increased, the heat exchange rate is reduced when the silicon rod grows to the upper portion of the water-cooling screen, and therefore the axial temperature gradient of the silicon rod is reduced, and the growth rate of the silicon rod is reduced.
Therefore, how to promote the heat exchange rate of the water-cooling screen, increase the axial temperature gradient when the silicon rod grows, and then promote the growth rate of monocrystalline silicon, become the technical problem that technical personnel in the field need to solve urgently.
Disclosure of Invention
In view of the above, the present invention provides a water-cooling screen to effectively increase a heat exchange rate of the water-cooling screen, and increase an axial temperature gradient of a silicon rod, so as to increase a growth rate of monocrystalline silicon.
Another object of the present invention is to provide a single crystal silicon growth apparatus.
Another object of the present invention is to provide a method for growing single crystal silicon.
In order to achieve the purpose, the invention provides the following technical scheme:
a water-cooling screen comprises a water-cooling screen body and a cooling water path arranged in the water-cooling screen body, wherein the cooling water path at least comprises two cooling water path branches, and the cooling water path branches are mutually independent;
and each cooling water channel branch is used for controlling the water supply time or water supply flow of cooling water, so that the cooling water channel branch at the corresponding position is in a low-temperature state when the silicon rod rises to a certain height.
Preferably, in the water screen, the cooling water path branches are arranged in sequence along the height direction of the water screen body; alternatively, the first and second electrodes may be,
and all the cooling water path branches are sequentially arranged along the circumferential direction of the water screen body.
Preferably, in the above water-cooling screen, the water-cooling screen body is formed by splicing at least two water-cooling screen body parts, and each water-cooling screen body part is provided with at least one cooling waterway branch.
Preferably, in the above water-cooling screen, the water-cooling screen body is formed by splicing at least two water-cooling screen body parts along the height direction; alternatively, the first and second electrodes may be,
the water-cooling screen body is formed by splicing at least two water-cooling screen body parts along the circumferential direction.
Preferably, in the above water-cooling screen, each of the water-cooling screen body parts is fixedly connected.
Preferably, in the above water-cooling screen, the cooling water path branches each have a cooling water pipe extending out of the water-cooling screen body, and a fixed support plate welded to the cooling water pipes of the other water-cooling screen bodies is provided on at least one cooling water pipe of the water-cooling screen body, so as to fixedly connect the water-cooling screen bodies.
Optionally, in the above water-cooling screen, each of the water-cooling screen bodies is attached to each other to form a spliced portion, and the attaching surfaces of any two adjacent water-cooling screen bodies are provided with a matched spliced portion.
Preferably, in the above water-cooling screen, the water-cooling screen body is designed as a straight cylinder, and the upper end of the circumference is provided with an observation bevel opening extending outwards for capturing by a camera lens and observing the conditions in the furnace by naked eyes.
The invention also provides a monocrystalline silicon growth device which comprises the water screen, wherein the water screen has one or more technical effects.
The invention also provides a monocrystalline silicon growing method, which is used for the monocrystalline silicon growing device, and in the stage of the monocrystalline silicon growing by straightening through the water-cooling screen, the rotating speed of a pulling head for pulling the monocrystalline silicon rod is set to be 7-9 rpm, the lifting rate of the silicon rod is set to be 1.6-1.9 mm/min, the rotating speed of a fused silica crucible is set to be 5-8 rpm, the furnace pressure of protective gas in the monocrystalline furnace is set to be 10-13 torr, the flow rate of the protective gas is set to be 80-100 slpm, and the vertical distance between the lower edge of the outer guide cylinder and the fused silica is 15-20 mm;
in the whole monocrystalline silicon straightening growth process, the water flow of the cooling water channel branch closest to the liquid level of the silicon material is set to be 60-70L/min, the water flow of the cooling water channel branch farthest from the liquid level of the silicon material is set to be 50-70L/min, and the water flow of the cooling water channel branch in the middle position is linearly and progressively reduced from near to far from the liquid level of the silicon material.
According to the technical scheme, the water-cooling screen provided by the invention is different from the prior art in that at least two cooling water channel branches are arranged in the water-cooling screen, and the cooling water channel branches are mutually independent, so that the heat exchange rate of the water-cooling screen is improved, the axial temperature gradient during silicon rod growth is increased, and the purpose of improving the growth speed of monocrystalline silicon is further achieved. Wherein, the water supply time or the water supply flow of each cooling water path branch road are controlled alone, and at the in-process that the monocrystalline silicon flare-out was grown, when the silicon rod rose to a certain height, the cooling water was provided to the cooling water path branch road that corresponds the height, had avoided the condition that the upper portion cooling water that single cooling water path can appear rose temperature in advance among the prior art, had guaranteed that the cooling water in the branch road is in the low temperature state when exchanging heat with the silicon rod. In addition, because the lower part cooling water channel is close to the molten silicon liquid level, cooling water can be heated through radiation heat transfer, so that the heat exchange rate of the silicon rod is reduced, and the cooling water after heat exchange can be discharged as soon as possible to ensure the heat exchange rate of the cooling water and the silicon rod by increasing the cooling water supply of the lower part cooling water channel branch. This water-cooling screen realizes promoting the heat transfer rate of water-cooling screen through setting up two at least cooling water route branches and independent control, axial temperature gradient's when increasing silicon rod growth purpose to promote monocrystalline silicon's growth rate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is an overall structure diagram of a water screen according to an embodiment of the present invention;
FIG. 2 is a view of a single water screen body section provided by an embodiment of the present invention;
FIG. 3 is a schematic view of a main flow chart of a method for growing single crystal silicon according to an embodiment of the present invention;
wherein, 10 water-cooling screen bodies, 20 are cooling water route branches, 101 are water-cooling screen body parts, 110 are observation oblique mouths, 201 are cooling water pipes, 202 are fixed support plates.
Detailed Description
The core of the invention is to disclose a water-cooling screen to improve the heat exchange rate of the water-cooling screen, increase the axial temperature gradient during the growth of the silicon rod and further improve the growth speed of the monocrystalline silicon.
The other core of the invention is to disclose a monocrystalline silicon growing device with the water screen.
The other core of the invention is to disclose a monocrystalline silicon growing method used for the monocrystalline silicon growing device.
In order that those skilled in the art will better understand the solution of the present invention, embodiments of the present invention will be described below with reference to the accompanying drawings. The embodiments described below do not limit the contents of the invention described in the claims. The entire contents of the configurations shown in the following embodiments are not limited to those required as solutions of the inventions described in the claims.
In the existing process of preparing the monocrystalline silicon by the Czochralski method, an integral water-cooling screen is used for absorbing heat released by the silicon rod from liquid growth to solid growth, and a cooling water path inside the integral water-cooling screen is supplied with cooling water to complete a heat dissipation process. Because a set of cooling water channel is used in the integral water-cooling screen, in the process of silicon rod growth, the lower cooling water absorbs heat and heats up, and then the heat is transferred to the upper cooling water, so that the temperature of the upper cooling water is increased, the heat exchange rate is reduced, the axial temperature gradient of the silicon rod is reduced, and the growth speed of the silicon rod is slowed down.
In order to overcome the technical problem, the inventor designs a water-cooling screen by ingenious conception, designs and independently controls cooling water paths in the water-cooling screen in a segmented manner, ensures that the water temperature of each cooling water path branch keeps a low-temperature state, improves the heat exchange rate of the water-cooling screen, increases the axial temperature gradient during the growth of a silicon rod, and effectively improves the growth speed of monocrystalline silicon. The details of the structure are described in the following detailed description.
As shown in fig. 1, the embodiment of the present invention discloses a water screen, which includes a water screen body 10 and a cooling water path arranged inside the water screen body 10, wherein the cooling water path includes at least two cooling water path branches 20, and each cooling water path branch 20 is independent of each other.
By controlling the water supply time or the water supply flow rate of the cooling water, the cooling water channel branches 20 at the corresponding positions are in a low-temperature state when the silicon rod rises to a certain height. Because the single cooling water path is designed into at least two mutually independent cooling water path branch circuits 20, the path of each cooling water path branch circuit 20 is reduced compared with the prior art, the cooling water temperature difference between the inlet and the outlet of each cooling water path branch circuit 20 is reduced, the problem that the heat exchange rate is slowed down when the silicon rod grows to the upper part of the water screen is avoided, and the axial temperature gradient when the silicon rod grows is increased.
For convenience of understanding, the water supply time and the water supply flow rate of the cooling water will be described below by taking an example in which the cooling water path branches 20 are arranged in sequence in the height direction of the water panel body 10.
The control method for controlling the water supply time of the cooling water comprises the steps of firstly providing the cooling water for the cooling water channel branch 20 closest to the molten silicon liquid level, starting to stretch the silicon rod to rise, and providing the cooling water for the cooling water channel branch 20 with the corresponding height when the silicon rod rises to a certain height so as to prevent the upper cooling water channel branch 20, the lower cooling water channel branch 20 and the molten silicon liquid level from heat exchange and temperature rise in advance to influence the subsequent cooling rate.
The control method for controlling the water supply flow of the cooling water comprises the following steps that considering that the lower cooling water channel branch 20 is close to the molten silicon liquid level, the cooling water can exchange heat with molten silicon in advance through radiation heat transfer, the temperature of the cooling water is higher when a silicon rod is stretched due to the fact that the temperature difference is smaller, the heat exchange rate is influenced, and the temperature rise of the lower cooling water can influence the upper cooling water through the radiation heat transfer, so that the cooling water with larger flow is provided for the cooling water channel branch 20 close to the molten silicon liquid level, the cooling water in the lower cooling water channel branch 20 is discharged out of a water screen system in time after being heated, newly supplied low-temperature cooling water exists in a water channel, and the heat exchange rate is ensured. The cooling water in the upper cooling water channel branch 20 is far away from the molten silicon liquid level, the temperature rise is slow, and therefore the flow rate can be linearly decreased.
It should be further noted that the cooling water path branches 20 are all annular surrounding water paths, so as to obtain a longer cooling water heat exchange path.
Compared with the prior art, the water-cooling screen provided by the invention has the difference that the cooling water channel is sectionally arranged into the plurality of independent cooling water channel branches 20, and the water supply time or the water supply flow of each cooling water channel branch 20 is independently controlled, so that the water temperatures of different cooling water channel branches 20 cannot be influenced mutually, the silicon rod is ensured to exchange heat with low-temperature water all the time, and the heat exchange rate is ensured. And the length of the single cooling water path branch 20 is shorter than that of the cooling water path in the prior art, so that the internal cooling water can be discharged as soon as possible after absorbing heat and being heated, and new low-temperature cooling water enters the cooling water path branch 20 to exchange heat with the silicon rod, thereby improving the heat exchange rate.
Further, each cooling water path branch 20 is arranged along the height direction of the water screen body 10 in sequence, or each cooling water path branch 20 is arranged along the circumferential direction of the water screen body 10 in sequence, and the arrangement mode can enable each cooling water path branch to exchange heat with the silicon rod uniformly. It is preferable that the cooling waterway branches 20 are sequentially arranged in the height direction of the water screen body 10.
It should be noted that the water-cooling screen body 10 may also be formed by splicing at least two water-cooling screen body portions 101, and each water-cooling screen body portion 101 is provided with at least one cooling waterway branch 20. Set up cooling water route branch road 20 in single water-cooling screen body part 101 and compare and set up a plurality of cooling water route branch roads 20 in water-cooling screen body 10, preparation and transportation are more simple convenient, splice a plurality of water-cooling screen body parts 101 when using again, form water-cooling screen body 10 and install and carry out the silicon rod heat dissipation.
Further, the water-cooling screen body 10 is formed by splicing at least two water-cooling screen body parts 101 along the height direction, or the water-cooling screen body 10 is formed by splicing at least two water-cooling screen body parts 101 along the circumferential direction, and the silicon rod of the internal cooling waterway branch 20 can be uniformly subjected to heat exchange by the splicing mode of the water-cooling screen body parts 101. The water screen body 101 is preferably joined in the height direction.
In the above technical scheme, each water-cooling screen body 101 is fixedly connected, so that each water-cooling screen body 101 can share one set of lifting system to complete the simultaneous lifting action, and compared with the independent lifting of each water-cooling screen body 101, the operation is simple and convenient and the error rate is low.
As shown in fig. 2, each of the cooling water path branches 20 has a cooling water pipe 201 extending outside the water-cooling screen body 101, a fixed support plate 202 for welding with the cooling water pipe of another water-cooling screen body 101 is provided on the cooling water pipe 201 of at least one water-cooling screen body 101, and the cooling water pipes 201 on the water-cooling screen bodies 101 are welded to realize the fixed connection of the water-cooling screen bodies.
It should be further explained that each water-cooling screen body 101 is attached to each other to be spliced as the water-cooling screen body 10, and the attaching surfaces of any two adjacent water-cooling screen body 101 are provided with matched splicing parts, and the splicing parts can be matched in a concave-convex clamping manner or screwed in a thread manner.
As shown in fig. 1, a water-cooling screen body 10 of the water-cooling screen disclosed in the embodiment of the present invention is designed as a straight tube, and if the water-cooling screen body 10 is formed by splicing a plurality of water-cooling screen body parts 101, each water-cooling screen body part 101 is designed as a straight tube. For the design of the oblique mouth in current water-cooling screen upper end, the design of straight section of thick bamboo can make water-cooling screen upper portion cooling water route more nearly apart from the silicon rod, and the heat transfer effect is better. In addition, the circumference upper end of the water-cooling screen body 10 of straight tube design still is seted up an outward extension and is observed the bevel connection 110 to realize the purpose that camera lens caught and the condition in the visual observation stove.
The embodiment of the invention also discloses a monocrystalline silicon growth device with the water-cooling screen disclosed by the embodiment, and the monocrystalline silicon growth device has all the technical effects of the water-cooling screen due to the water-cooling screen, and is not repeated again.
The embodiment of the invention also discloses a monocrystalline silicon growth method, which is realized by using the monocrystalline silicon growth device with the water-cooling screen provided by any one of the embodiments, and as shown in fig. 3, the monocrystalline silicon growth method can comprise the following steps:
s01: finishing the installation of the internal parts of the single crystal furnace and melting the silicon material;
s02: setting parameters of each component in the single crystal furnace;
s03: setting flow parameters of a cooling water path in a water-cooling screen;
s04: and pulling and growing the monocrystalline silicon through the water-cooling screen.
The specific implementation of step S01 is the same as that in the prior art, and is not described herein again; the parameters to be set in the step S02 include the rotational speed of a pulling head for pulling the single crystal silicon rod, the silicon rod lifting rate, the rotational speed of a fused silica crucible, the furnace pressure of the protective gas in the single crystal furnace, the flow rate of the protective gas and the vertical distance from the lower edge of the outer draft tube to the fused silica; the parameters required to be set in step S03 include the flow rates of the cooling water path branches 20; and step S04, lifting the silicon single crystal rod to pass through a water-cooling screen for straightening growth under the set parameters.
In order to more clearly understand the method for growing single crystal silicon, a large-sized silicon rod (e.g., M10, G12) is described in detail below by way of an embodiment for controlling the flow rate of the cooling water path branch 20. The examples are as follows:
step I: and the water-cooling screen is placed into the single crystal furnace by utilizing a lifting mechanism arranged on the water-cooling screen.
Step II: after the furnace is closed, the operations of evacuation, leak detection and pressurization are carried out according to the prior art standard.
Step III: and performing the fusion operation of the CZ process (Czochralski silicon process), setting the rotating speed of a pulling head to be 8-10 rpm, the rotating speed of a quartz crucible to be 6-8 rpm, the furnace pressure to be 10-13 torr, the vertical distance between the lower edge of an outer guide cylinder and the liquid level of the silicon melt to be 20-40 mm, slowly descending the seed crystal, preheating, slowly inserting the seed crystal into the silicon melt after the temperature of the silicon melt in the quartz crucible is stabilized, and performing temperature testing fusion. After the temperature is proper, the lifting head is lifted at a lifting speed of 3-4 mm/min to perform seeding.
Step IV: after seeding, shoulder setting and shoulder rotating steps are carried out, the rotating speed of a pulling head in the shoulder setting process is set to be 8-10 rpm, and the seed crystal lifting speed is set to be 0.5-0.75 mm/min; the rotating speed of the pulling head in the shoulder rotating process is set to be 8-10 rpm, and the pulling speed of the seed crystal is set to be 2-4 mm/min.
Step V: after the CZ process enters the constant diameter process, setting the rotating speed of a pulling head for pulling the silicon single crystal rod to be 7-9 rpm, setting the lifting rate of the silicon rod to be 1.6-1.9 mm/min, setting the rotating speed of a fused silica crucible to be 5-8 rpm, setting the furnace pressure of protective gas in the single crystal furnace to be 10-13 torr, setting the flow rate of the protective gas to be 80-100 slpm, and setting the vertical distance between the lower edge of an outer guide cylinder and the fused silica to be 15-20 mm;
in the whole isodiametric process, the water flow of the cooling water channel branch 20 closest to the liquid level of the silicon material is set to be 60-70L/min, the water flow of the cooling water channel branch 20 farthest from the liquid level of the silicon material is set to be 50-70L/min, and the water flow of the cooling water channel branch 20 at the middle position is linearly and progressively reduced from near to far from the liquid level of the silicon material.
Step VI: and ending and blowing out according to the CZ process standard in the prior art.
Particularly, in the equal diameter process of the step V, the silicon rod lifting speed is set to be 1.6-1.9 mm/min, which is 0.3mm/min higher than that of a single crystal furnace using the existing water-cooling screen.
The above steps are provided only for helping to understand the structure, method and core idea of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the principles of the invention, and these changes and modifications also fall within the scope of the appended claims.
Claims (10)
1. A water-cooling screen comprises a water-cooling screen body (10) and a cooling water path arranged inside the water-cooling screen body (10), and is characterized in that the cooling water path at least comprises two cooling water path branches (20), and the cooling water path branches (20) are mutually independent;
and each cooling water channel branch (20) controls the water supply time or water supply flow rate of cooling water, so that when the silicon rod rises to a certain height, the cooling water channel branch (20) at the corresponding position is in a low-temperature state.
2. The water screen according to claim 1, characterized in that each cooling water path branch (20) is arranged in sequence along the height direction of the water screen body (10); alternatively, the first and second electrodes may be,
the cooling water channel branches (20) are sequentially arranged along the circumferential direction of the water screen body (10).
3. The water screen according to claim 1, characterized in that the water screen body (10) is formed by splicing at least two water screen body parts (101), and each water screen body part (101) is provided with at least one cooling water path branch (20).
4. A water screen according to claim 3, characterized in that the water screen body (10) is formed by splicing at least two water screen body parts (101) in the height direction; alternatively, the first and second electrodes may be,
the water-cooling screen body (10) is formed by splicing at least two water-cooling screen body parts (101) along the circumferential direction.
5. A water screen according to claim 3, wherein each of the water screen body portions (101) is fixedly connected.
6. The water-cooling screen of claim 5, characterized in that the cooling water path branches (20) are provided with cooling water pipes (201) extending out of the water-cooling screen body parts (101), and a fixed support plate (202) for welding with the cooling water pipes of other water-cooling screen body parts (101) is arranged on the cooling water pipe (201) of at least one water-cooling screen body part (101) to realize the fixed connection of each water-cooling screen body part (101).
7. The water-cooling screen of claim 5, characterized in that each water-cooling screen body (101) is jointed to form the water-cooling screen body (10), and the jointing surfaces of any two adjacent water-cooling screen bodies (101) are provided with matching jointing parts.
8. The water screen of claim 1, characterized in that the water screen body (10) is of a straight tube design and has an outwardly extending viewing bezel (110) at the upper end of its circumference for camera lens capture and visual observation of furnace conditions.
9. A single crystal silicon growth apparatus comprising a water screen, wherein the water screen is as claimed in any one of claims 1 to 8.
10. A method for growing single crystal silicon, wherein the water-cooled screen of any one of claims 1 to 8 is used, comprising the steps of:
in the stage of pulling and growing the monocrystalline silicon through the water-cooling screen, setting the rotating speed of a pulling head for pulling the monocrystalline silicon rod to be 7-9 rpm, setting the lifting rate of the silicon rod to be 1.6-1.9 mm/min, setting the rotating speed of a silica melting crucible to be 5-8 rpm, setting the furnace pressure of protective gas in the monocrystalline furnace to be 10-13 torr, setting the flow rate of the protective gas to be 80-100 slpm, and setting the vertical distance between the lower edge of an outer guide cylinder and the molten silicon to be 15-20 mm;
in the whole monocrystalline silicon straightening growth process, the water flow of the cooling water channel branch (20) closest to the liquid level of the silicon material is set to be 60-70L/min, the water flow of the cooling water channel branch (20) farthest from the liquid level of the silicon material is set to be 50-70L/min, and the water flow of the cooling water channel branch (20) in the middle position is linearly and progressively reduced from near to far according to the distance from the liquid level of the silicon material.
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Application publication date: 20220128 |