CN111663178A - Heat shield device for pulling single crystal and single crystal silicon production equipment - Google Patents
Heat shield device for pulling single crystal and single crystal silicon production equipment Download PDFInfo
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- CN111663178A CN111663178A CN201910176730.XA CN201910176730A CN111663178A CN 111663178 A CN111663178 A CN 111663178A CN 201910176730 A CN201910176730 A CN 201910176730A CN 111663178 A CN111663178 A CN 111663178A
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- single crystal
- gas
- pulling
- heat shield
- guide channel
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- 239000013078 crystal Substances 0.000 title claims abstract description 108
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000007788 liquid Substances 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 70
- 238000000034 method Methods 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a heat shield device for pulling a single crystal and production equipment of the single crystal, wherein the heat shield device for pulling the single crystal comprises: an inner screen for being disposed around the single crystal; the outer screen is coaxially arranged on one side of the inner screen, which is far away from the single crystal; and the flow guide channel is embedded between the inner screen and the outer screen and is used for introducing working gas. The embodiment of the invention can improve the growth speed of the single crystal and the yield and the production efficiency of the single crystal silicon.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a heat shield device for pulling a single crystal and single crystal silicon production equipment.
Background
With the development of photovoltaic technology, monocrystalline silicon is also widely used. For example, silicon wafers made of single crystal silicon are used as the main constituent structure of a cell, and the use of single crystal silicon wafers is becoming more and more widespread with the increase of the photovoltaic installed capacity.
In the prior art, monocrystalline silicon production equipment such as a monocrystalline furnace and the like is often adopted to produce monocrystalline silicon, and the specific production method is as follows: inert gas such as argon is introduced from the top of the single crystal furnace, the silicon raw material in the crucible is heated to be molten silicon, and then the silicon raw material is grown and pulled from the liquid surface of the molten silicon, namely the crystal growth liquid surface to be a single crystal silicon rod. In the process of pulling up single crystal silicon, working gas is introduced into the surface of the molten silicon in the quartz crucible from the top to the bottom.
However, in the process of introducing the working gas into the crucible from top to bottom, the working gas easily rushes impurities on the inner wall of the single crystal furnace or impurities on other thermal field components such as a draft tube in the single crystal furnace into the single crystal growth atmosphere, which may destroy the order of lattice growth of the single crystal silicon and seriously cause edge breakage of the single crystal silicon rod, thereby affecting the yield and production efficiency of the single crystal silicon.
Disclosure of Invention
In view of the above problems, the present invention has been made to provide a heat shield device for czochralski single crystal and a single crystal silicon production apparatus which overcome the above problems or at least partially solve the above problems.
In order to solve the above problems, in one aspect, the present invention discloses a heat shield apparatus for pulling a single crystal, comprising:
an inner screen for being disposed around the single crystal;
the outer screen is coaxially arranged on one side of the inner screen, which is far away from the single crystal; and
and the flow guide channel is embedded between the inner screen and the outer screen and is used for introducing working gas.
Optionally, the flow guide channel comprises a plurality of gas guide tubes, and the gas guide tubes are distributed around the central axis of the inner shield at equal angles on the side far away from the single crystal.
Optionally, the plurality of air ducts are in fit contact with the inner screen.
Optionally, the airway tube comprises: the gas guide device comprises a pipe wall and a gas guide channel positioned in the pipe wall, wherein the introduced working gas flows through the gas guide channel.
Optionally, the tube wall includes a first sub-tube wall, a second sub-tube wall, and a cooling interlayer disposed between the first sub-tube wall and the second sub-tube wall.
Optionally, the flow guide channel further comprises a plurality of air outlets communicated with the plurality of air guide tubes, and the plurality of air outlets are all opposite to the liquid level of the single crystal growth and distributed at equal angles around the central axis of the inner screen.
Optionally, the flow guide channel further comprises an air outlet pipe connected with the plurality of air guide pipes, and the plurality of air outlets are all arranged on the air outlet pipe.
Optionally, the gas outlet pipe is coaxially disposed with the inner shield, and the gas outlet pipe is closer to the crystal growth liquid level than the inner shield and/or the outer shield in the central axial direction of the inner shield.
On the other hand, the invention also discloses monocrystalline silicon production equipment, which comprises:
the crucible is used for accommodating crystal growth melt; and
the heat shield device for pulling the single crystal is coaxially arranged with the crucible.
Optionally, the monocrystalline silicon production equipment further comprises an air supply mechanism, and the air supply mechanism is connected with the flow guide channel of the heat shield device for pulling the monocrystalline silicon.
The invention has the following advantages:
in the embodiment of the invention, the flow guide channel is embedded between the inner screen and the outer screen and can be used for introducing working gas, so that the working gas can be introduced into the liquid level of the single crystal growth by the flow guide channel in the process of pulling the single crystal silicon by using a Czochralski method, the latent heat of crystallization generated during the single crystal crystallization is rapidly taken away, the longitudinal temperature gradient is increased, and the growth speed of the single crystal is improved. Moreover, the flow guide channel is embedded between the inner screen and the outer screen, so that the situation that the working gas rushes impurities on the inner screen into the single crystal production atmosphere to influence the lattice growth order of the single crystal can be avoided, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
Drawings
FIG. 1 is a schematic structural view of a heat shield apparatus for pulling a single crystal according to the present invention;
FIG. 2 is a schematic view of an airway tube of the present invention;
FIG. 3 is a schematic view of an outlet pipe according to the present invention;
FIG. 4 is a schematic view of the structure of a single crystal production apparatus of the present invention;
10-inner shield, 11-outer shield, 12-flow guide channel, 121-gas guide tube, 122-tube wall, 1221-first sub-tube wall, 1222-second sub-tube wall, 1223-cooling interlayer, 123-gas guide channel, 124-gas outlet tube, 1241-gas outlet hole, 40-crucible, 401-crystal growth solution, 402-single crystal, 41-heat shield device for pulling single crystal.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
Referring to fig. 1, a schematic structural diagram of a heat shield device for pulling a single crystal is shown, and the heat shield device specifically comprises:
an inner screen 10 for being disposed around the single crystal;
the outer screen 11 is coaxially arranged on one side of the inner screen 10 far away from the single crystal; and
and the flow guide channel 12 is embedded between the inner screen 10 and the outer screen 11, and the flow guide channel 12 can be used for introducing working gas.
In practical application, the working gas may be an inert gas such as argon, and the single crystal may be a single crystal silicon product such as a single crystal silicon rod pulled by a czochralski method.
In the embodiment of the invention, the flow guide channel 12 is embedded between the inner screen 10 and the outer screen 11, and the flow guide channel 12 can be used for introducing working gas, so that the working gas can be introduced into the liquid level of the single crystal growth by the flow guide channel 12 in the process of pulling the single crystal silicon by using the czochralski method, the latent heat of crystallization generated during the single crystal crystallization is rapidly taken away, the longitudinal temperature gradient is increased, and the growth speed of the single crystal is improved. Moreover, because the flow guide channel 12 is embedded between the inner screen 10 and the outer screen 11, the impurities on the inner screen 11 can be prevented from being flushed into the single crystal production atmosphere by the working gas to influence the lattice growth order of the single crystal, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
In an alternative embodiment of the invention, the flow guide channel 12 may comprise a plurality of gas guide tubes 121, and the plurality of gas guide tubes 121 are distributed at equal angles around the central axis of the inner screen 10 on the side away from the single crystal. In practical application, under the condition that the plurality of gas guide tubes 121 are distributed at equal angles around the central axis of the inner screen 10 at the side far away from the single crystal, the working gas can be uniformly introduced into single crystal production equipment, so that the distribution uniformity of the working gas in the single crystal production equipment is improved, and the heating uniformity of the single crystal is improved.
It will be understood that fig. 1 only shows the case where the flow guide channel 12 comprises two gas-guide tubes 121, and in practical applications, the number of gas-guide tubes 121 in the flow guide channel 12 may also be other values, for example: 3, 5, or 6, etc., and the number of the air tubes 121 in the embodiment of the present invention may not be limited specifically.
Preferably, the gas guide tube 121 may be disposed near the inner screen 10, so that the gas guide tube 121 may guide the working gas into a position close to the single crystal, and improve a heat dissipation effect of the working gas on the single crystal. Specifically, the plurality of gas conduits 121 may each be in abutting contact with the inner screen 10 to secure the gas conduits 121 to the inner screen 10.
In practical applications, since the gas guiding tube 121 is in contact with the inner panel 10 and the temperature of the inner panel 10 is higher, the gas guiding tube 121 may be made of stainless steel in order to improve the heat resistance of the gas guiding tube 121 and prolong the service life of the gas guiding tube 121. Specifically, since stainless steel has good heat resistance, corrosion resistance, and processability, in the case that the material of the gas-guide tube 121 is stainless steel, the gas-guide tube 121 has good heat resistance, corrosion resistance, and processability, respectively.
It can be understood that, in practical applications, the gas-guide tube 121 may also be made of other materials such as high-temperature resistant engineering plastics and high-temperature resistant inorganic materials, and the specific material of the gas-guide tube 121 may not be limited in the embodiment of the present invention.
Referring to fig. 2, there is shown a schematic view of the structure of an airway tube of the present invention, which, as shown in fig. 2, may comprise: tube wall 122 and gas guide channel 123 located in tube wall 122, the working gas introduced flowing through gas guide channel 123.
In an embodiment of the present invention, the tube wall 122 may include a first sub-tube wall 1221, a second sub-tube wall 1222, and a cooling interlayer 1223 disposed between the first sub-tube wall 1221 and the second sub-tube wall 1222, and in practical applications, the cooling interlayer 1223 may be used to introduce circulating cooling water to reduce the temperature of the gas-guide tube 121 and improve the service life of the gas-guide tube 121.
In another optional embodiment of the present invention, the guiding channel 12 may further comprise a plurality of air outlets communicated with the plurality of air guiding tubes 121, and the plurality of air outlets are all opposite to the single crystal growth liquid surface and are distributed at equal angles around the central axis of the inner screen. In practical application, because the plurality of gas outlets are opposite to the liquid level of the single crystal growth and distributed at equal angles around the central axis of the inner screen, the working gas in the flow guide channel 12 can be uniformly introduced into the liquid level of the single crystal growth, so that the distribution uniformity of the working gas in the liquid level of the single crystal growth is improved, and the heating uniformity of the liquid level of the single crystal growth is improved.
In practical application, one of the air outlets may be provided on each of the plurality of air ducts 121, and each of the air outlets is opposite to the liquid level of the single crystal growth.
In yet another alternative embodiment of the present invention, the diversion passage 12 may further include an outlet pipe 124 connected to the plurality of air guide tubes 121, and the plurality of air outlets are all opened to the outlet pipe 124.
Referring to fig. 3, a schematic structural diagram of an outlet pipe according to the present invention is shown, and as shown in fig. 3, a plurality of outlet holes 1241 are provided on the outlet pipe 124.
As shown in fig. 3, a plurality of gas outlets 1241 may be uniformly distributed on the gas outlet pipe 124, so as to uniformly introduce the working gas in the gas outlet pipe 124 into the liquid level of the single crystal growth, improve the distribution uniformity of the working gas in the liquid level of the single crystal growth, and improve the heating uniformity of the liquid level of the single crystal growth.
It should be understood that fig. 3 only shows that 8 air outlet holes 1241 are provided on the air outlet pipe 124, and in practical applications, the number of the air outlet holes 1241 on the air outlet pipe 124 may be other values. For example, the number of the air outlet holes 1241 may be 6, 10, 12, or the like. The specific number of the air outlet holes 1241 on the air outlet pipe 124 in the embodiment of the present invention may not be limited.
In the embodiment of the present invention, the gas outlet 124 and the inner shield 10 may be coaxially disposed, and the gas outlet 124 is closer to the crystal growth liquid surface than the inner shield 10 and/or the outer shield 11 in the central axial direction of the inner shield 10. In practical application, because the gas outlet pipe 124 is closer to the crystal growth liquid surface than the inner shield 10 and/or the outer shield 11, the gas outlet pipe 124 can directly guide the working gas in the flow guide channel 124 to the crystal growth liquid surface, so that on one hand, latent heat of crystallization generated during single crystal crystallization can be rapidly taken away, longitudinal temperature gradient is increased, and the growth speed of single crystals is increased. Moreover, the working gas can be further prevented from rushing the impurities on the inner screen 11 into the single crystal production atmosphere to influence the order of the crystal lattice growth of the single crystal, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
In summary, the heat shield device for pulling the single crystal in the embodiment of the invention at least has the following advantages:
in the embodiment of the invention, the flow guide channel is embedded between the inner screen and the outer screen and can be used for introducing working gas, so that the working gas can be introduced into the liquid level of the single crystal growth by the flow guide channel in the process of pulling the single crystal silicon by using a Czochralski method, the latent heat of crystallization generated during the single crystal crystallization is rapidly taken away, the longitudinal temperature gradient is increased, and the growth speed of the single crystal is improved. Moreover, the flow guide channel is embedded between the inner screen and the outer screen, so that the situation that the working gas rushes impurities on the inner screen into the single crystal production atmosphere to influence the lattice growth order of the single crystal can be avoided, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
Example two
Referring to fig. 4, a schematic structural diagram of a single crystal production apparatus of the present invention is shown, and as shown in fig. 4, the single crystal production apparatus may specifically include: a crucible 40, the crucible 40 being operable to receive the crystal growth melt 401; and the heat shield 41 for pulling the single crystal, wherein the heat shield 41 for pulling the single crystal is provided coaxially with the crucible 40.
In practical application, because the heat shield device 41 for pulling the single crystal is coaxially arranged with the crucible 40, the flow guide channel on the heat shield device 41 for pulling the single crystal can guide the working gas into the liquid level of the single crystal growth in the crucible 40 when the single crystal is pulled, thereby quickly taking away the latent heat of crystallization generated when the single crystal 402 is crystallized, increasing the longitudinal temperature gradient and improving the growth speed of the single crystal 402. Moreover, the flow guide channel is embedded between the inner screen and the outer screen, so that the phenomenon that the working gas rushes impurities on the inner screen into the single crystal production atmosphere to influence the lattice growth order of the single crystal 41 can be avoided, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
In practical application, the single crystal silicon production equipment can further comprise a gas supply mechanism (not shown in the figure), and the gas supply mechanism is connected with the flow guide channel of the heat shield device 41 for pulling the single crystal. In practical application, the gas supply mechanism can be used for supplying working gas to the flow guide channel, and the gas supply mechanism is connected with the flow guide channel of the czochralski single crystal heat shield device 41, so that the working gas in the gas supply mechanism can be conveniently introduced into the single crystal production equipment by the flow guide channel.
In the monocrystalline silicon production equipment provided by the embodiment of the invention, as the heat shield device 40 for pulling the czochralski single crystal and the crucible 40 are coaxially arranged, the flow guide channel on the heat shield device 41 for pulling the monocrystalline silicon can guide the working gas into the liquid level of the monocrystalline growth in the crucible 40 when the monocrystalline is pulled, thereby quickly taking away the latent heat of crystallization generated when the monocrystalline 402 is crystallized, increasing the longitudinal temperature gradient and improving the growth speed of the monocrystalline 402. Moreover, the flow guide channel is embedded between the inner screen and the outer screen, so that the phenomenon that the working gas rushes impurities on the inner screen into the single crystal production atmosphere to influence the lattice growth order of the single crystal 41 can be avoided, and further, the yield and the production efficiency of the single crystal silicon can be further improved.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The heat shield device for pulling the single crystal and the production equipment of the single crystal silicon provided by the invention are described in detail, the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. Heat shield device for pulling single crystal is characterized by comprising:
an inner screen for being disposed around the single crystal;
the outer screen is coaxially arranged on one side of the inner screen, which is far away from the single crystal; and
and the flow guide channel is embedded between the inner screen and the outer screen and is used for introducing working gas.
2. The heat shield apparatus for pulling a single crystal according to claim 1, wherein the flow guide channel comprises a plurality of gas-guiding tubes which are equiangularly distributed around a central axis of the inner shield on a side remote from the single crystal.
3. The heat shield apparatus for pulling a single crystal according to claim 2, wherein the plurality of gas-guiding tubes are in close contact with the inner shield.
4. The heat shield apparatus for pulling a single crystal according to claim 2, wherein the gas guide tube comprises: the gas guide device comprises a pipe wall and a gas guide channel positioned in the pipe wall, wherein the introduced working gas flows through the gas guide channel.
5. The heat shield apparatus for pulling a single crystal according to claim 4, wherein the tube wall comprises a first sub-tube wall, a second sub-tube wall, and a cooling jacket disposed between the first sub-tube wall and the second sub-tube wall.
6. The heat shield apparatus for pulling a single crystal according to any one of claims 2 to 5, wherein the flow guide passage further comprises a plurality of gas outlets communicating with the plurality of gas guide tubes, the plurality of gas outlets being opposed to the liquid surface of the single crystal growth and being equiangularly distributed around the central axis of the inner shield.
7. The heat shield apparatus for pulling a single crystal according to claim 6, wherein the guide passage further comprises an outlet tube connected to the plurality of gas guide tubes, and the plurality of gas outlets are provided in the outlet tube.
8. The heat shield apparatus for pulling a single crystal according to claim 7, wherein the gas outlet pipe is provided coaxially with the inner shield, and the gas outlet pipe is closer to the crystal growth liquid surface than the inner shield and/or the outer shield in the central axial direction of the inner shield.
9. Monocrystalline silicon production equipment, its characterized in that includes:
the crucible is used for accommodating crystal growth melt; and
the heat shield apparatus for Czochralski single crystal as set forth in any one of claims 1 to 8, which is disposed coaxially with the crucible.
10. The single-crystal silicon production apparatus according to claim 9, further comprising a gas supply mechanism connected to a flow guide passage of the heat shield device for pulling single crystal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176730.XA CN111663178A (en) | 2019-03-08 | 2019-03-08 | Heat shield device for pulling single crystal and single crystal silicon production equipment |
| PCT/CN2019/115418 WO2020181795A1 (en) | 2019-03-08 | 2019-11-04 | Heat shield apparatus for czochralski monocrystalline silicon and monocrystalline silicon production equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176730.XA CN111663178A (en) | 2019-03-08 | 2019-03-08 | Heat shield device for pulling single crystal and single crystal silicon production equipment |
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| Publication Number | Publication Date |
|---|---|
| CN111663178A true CN111663178A (en) | 2020-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910176730.XA Pending CN111663178A (en) | 2019-03-08 | 2019-03-08 | Heat shield device for pulling single crystal and single crystal silicon production equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111663178A (en) |
| WO (1) | WO2020181795A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249780A (en) * | 2021-06-07 | 2021-08-13 | 浙江晶科能源有限公司 | Flow guide device, single crystal furnace and flow guide control method |
| CN113529164A (en) * | 2021-06-02 | 2021-10-22 | 徐州鑫晶半导体科技有限公司 | Temperature zone control system and crystal growth equipment |
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
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| JPH0596073U (en) * | 1992-05-27 | 1993-12-27 | コマツ電子金属株式会社 | Thermal shield for pulling single crystal |
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|---|---|---|---|---|
| CN113529164A (en) * | 2021-06-02 | 2021-10-22 | 徐州鑫晶半导体科技有限公司 | Temperature zone control system and crystal growth equipment |
| WO2022253233A1 (en) * | 2021-06-02 | 2022-12-08 | 徐州鑫晶半导体科技有限公司 | Temperature zone control system and crystal growth apparatus |
| CN113529164B (en) * | 2021-06-02 | 2023-03-14 | 徐州鑫晶半导体科技有限公司 | Temperature zone control system and crystal growth equipment |
| TWI838758B (en) * | 2021-06-02 | 2024-04-11 | 大陸商中環領先半導體科技股份有限公司 | System for controlling temperature zone and crystal growth system |
| CN113249780A (en) * | 2021-06-07 | 2021-08-13 | 浙江晶科能源有限公司 | Flow guide device, single crystal furnace and flow guide control method |
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
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| Publication number | Publication date |
|---|---|
| WO2020181795A1 (en) | 2020-09-17 |
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