CN112941616A

CN112941616A - Water-cooling screen and monocrystalline silicon growth furnace

Info

Publication number: CN112941616A
Application number: CN201911175453.7A
Authority: CN
Inventors: 不公告发明人
Original assignee: Shenzhen Jingxin Intelligent Manufacturing Technology Co ltd
Current assignee: Shenzhen Jingxin Intelligent Manufacturing Technology Co ltd
Priority date: 2019-11-26
Filing date: 2019-11-26
Publication date: 2021-06-11

Abstract

The invention provides a water-cooling screen, which is applied to cooling a silicon single crystal rod to be grown in a vacuum environment, and comprises a hollow metal tube, wherein the metal tube is filled with cooling liquid, the metal tube is sequentially wound along the same axial direction to form a sleeve with an accommodating space and two open ends, the accommodating space is used for accommodating the silicon single crystal rod, and the metal tube and the accommodated silicon single crystal rod are arranged at intervals; at least part of two ends of the metal pipe extends to the outside of the metal pipe from the sleeve, and the cooling liquid flows in from one end of the metal pipe and flows out from the other end of the metal pipe after being coiled along the metal pipe so as to cool the silicon single crystal rod accommodated in the accommodating space. The invention also provides a monocrystalline silicon growth furnace applying the water screen. Compared with the prior art, the water-cooling screen and the monocrystalline silicon growth furnace have large heat absorption surface area and good heat exchange effect, effectively cool the monocrystalline silicon rod to be grown, and improve the pulling speed of crystal growth.

Description

Water-cooling screen and monocrystalline silicon growth furnace

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of monocrystalline silicon production, in particular to a water-cooled screen produced by using monocrystalline silicon and a monocrystalline silicon growth furnace.

[ background of the invention ]

With the use of new energy materials by more and more people, solar energy receives more and more attention and application of more and more people as green energy. The monocrystalline silicon material for the large solar cell has the advantage that the production cost of the monocrystalline silicon becomes an important factor for whether the large solar cell has competitive advantages. Among them, the growth rate in the production of single crystal silicon becomes a bottleneck. The production of single crystal silicon mainly uses the czochralski method to draw a single crystal silicon rod through a single crystal furnace. The normal pulling speed is only 0.8 mm/min, and in order to increase the growth speed of the silicon crystal, a water-cooling screen is usually used at the root position of the silicon crystal to quickly take away heat, so that the pulling speed can be increased to 1.4 mm/min.

At present, the water-cooling screen of the related art comprises a sleeve made of inner and outer stainless steels and a water-proof strip arranged in the sleeve, wherein the water-proof strip is filled with water to cool monocrystalline silicon of the sleeve. Wherein, the inside and outside face of water-cooling screen is the bending plane.

However, the inside and outside surfaces of the water screen in the related art are both curved planes, that is, the inside and outside walls of the surface of the water screen are both planar, which results in a limitation of heat exchange speed. The working principle of the water-cooling screen is that the heat at the root of the crystal is quickly taken away by a heat exchange method, so that the growth speed of the crystal is accelerated. However, in the case where the space in the single crystal furnace is very tight, it is impossible to greatly increase the volume of the water-cooled jacket, and it is difficult to greatly increase the crystal growth rate.

Therefore, it is necessary to provide a new water screen and a single crystal silicon growth furnace to solve the above technical problems.

[ summary of the invention ]

The invention aims to overcome the technical problems and provide a water screen and a monocrystalline silicon growth furnace which have large heat absorption surface area and good heat exchange effect, effectively cool a monocrystalline silicon rod to be grown and improve the pulling speed of crystal growth.

In order to achieve the purpose, the invention provides a water-cooling screen which is applied to cooling a silicon single crystal rod to be grown in a vacuum environment, and the water-cooling screen comprises a hollow metal tube, wherein the metal tube is filled with cooling liquid, the metal tube is sequentially wound along the same axial direction to form a sleeve with an accommodating space and two open ends, the accommodating space is used for accommodating the silicon single crystal rod, and the metal tube and the accommodated silicon single crystal rod are arranged at intervals; and at least part of two ends of the metal pipe extends from the sleeve to the outside of the metal pipe, so that the cooling liquid flows in from one end of the metal pipe and flows out from the other end of the metal pipe after being coiled along the metal pipe, and the silicon single crystal rod accommodated in the accommodating space is cooled.

Preferably, the metal pipe is made of stainless steel material, and the cooling liquid is water.

Preferably, the metal tube can be kept sealed in a vacuum environment, and the heat-resistant temperature of the metal tube is more than 1000 ℃.

Preferably, the sleeve is of a cylindrical structure; the opening of sleeve one end is the front end, with the opening of the one end that the front end is relative is the rear end, the sleeve is followed the axial by the front end to the diameter of rear end diminishes gradually.

Preferably, the metal pipe comprises a spiral part which is coiled in sequence along the axial direction of the sleeve, and a first end part and a second end part which respectively extend to the front end from the spiral part, wherein the first end part is formed by bending and extending the spiral part from the front end to the direction far away from the spiral part; the second end part is formed by bending and extending the spiral part from the rear end to the rear end after penetrating through the accommodating space and to the direction far away from the spiral part; the coil forms the sleeve.

Preferably, the second end portion passes through the accommodating space from the rear end to a part of the front end and abuts against the inner wall of the sleeve.

Preferably, the first end portion comprises a first section bent and extended from the spiral portion at the front end to a direction far away from the rear end, a second section bent and extended from the first section to a direction far away from the axis of the sleeve, and a third section bent and extended from the second section to a direction far away from the axis; the second end portion comprises a fourth section, a fifth section and a sixth section, the fourth section is located at the rear end, the spiral portion of the rear end extends in a bending mode in the direction of the front end, the fifth section extends in a bending mode in the direction of the axis of the sleeve away from the fourth section, the sixth section extends in a bending mode in the direction of the axis of the sleeve away from the fifth section, and the fourth section partially abuts against the inner wall of the sleeve.

Preferably, the water screen further comprises a first valve and a second valve, the first valve is disposed at the first end portion, and the second valve is disposed at the second end portion.

Preferably, the two ends of the metal pipe are respectively arranged along the axial direction of the sleeve symmetrically.

The invention also provides a monocrystalline silicon growth furnace, which comprises a furnace body and the water-cooling screen arranged in the furnace body.

Compared with the prior art, the water-cooling screen and the monocrystalline silicon growing furnace are characterized in that the metal pipe is sequentially wound along the same axial direction to form a sleeve with an accommodating space and two open ends, the monocrystalline silicon rod to be grown is accommodated in the accommodating space, the cooling liquid in the metal pipe flows in from one end of the metal pipe and flows out from the other end of the metal pipe after being wound along the metal pipe, and the monocrystalline silicon rod accommodated in the accommodating space is cooled. The structure ensures that the sleeve has large heat absorption surface area through absorbing radiation heat and good heat exchange effect, effectively cools the monocrystalline silicon rod to be grown, and improves the pulling speed of crystal growth.

[ description of the drawings ]

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:

FIG. 1 is a schematic perspective view of a water screen according to the present invention;

FIG. 2 is a side view of FIG. 1;

fig. 3 is a top view of fig. 1.

[ detailed description ] embodiments

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1 to 3, the present invention provides a water-cooling screen 100, wherein the water-cooling screen 100 is used for cooling a silicon single crystal rod (not shown) to be grown in a vacuum environment.

The water-cooling screen 100 includes a hollow metal tube 1. The metal tube 1 is filled with a cooling liquid (not shown). Wherein the metal tube 1 can be kept sealed in a vacuum environment. The heat-resistant temperature of the metal tube 1 is more than 1000 ℃. In the present embodiment, the metal pipe 1 is made of a stainless steel material. The metal pipe 1 made of the stainless steel material has the advantages of high pressure resistance and high heat absorption capacity, and the material is very suitable for manufacturing the metal pipe 1. The cooling liquid is water.

The metal pipe 1 is sequentially wound in a spiral mode along the same axial direction X to form a sleeve 2 with an accommodating space 10 and two open ends. The accommodating space 10 is used for accommodating the single crystal silicon rod. Specifically, the accommodating space 10 is used for accommodating the monocrystalline silicon rod portion therein. And the accommodated silicon single crystal rod and the metal pipe 1 are arranged at intervals, and the structure enables the silicon single crystal rod and the metal pipe 1 to form thermal coupling. The diameter of the two ports of the sleeve 2 is larger than the diameter of the single crystal silicon rod, so that the single crystal silicon rod passes through the accommodating space 10 along the axial direction X of the sleeve 2 for molding. That is, the accommodating space 10 formed by the sleeve 2 is used for accommodating the monocrystalline silicon rod with a higher temperature in a vacuum environment and absorbing the radiation heat of the monocrystalline silicon rod through the inside thereof. The sleeve 2 structure formed by the metal tube 1 is beneficial to rapidly cooling the silicon single crystal rod to be grown and improving the pulling speed of crystal growth, so that the silicon single crystal rod is molded.

Both ends of the metal tube 1 extend at least partially from the sleeve 2 to the outside thereof. This structure allows the cooling liquid to flow in from one end of the metal tube 1, to flow out from the other end thereof after being coiled along the metal tube 1, and to cool the single crystal silicon rod accommodated in the accommodating space 10. Preferably, two ends of the metal tube 1 are respectively and symmetrically arranged along the axial direction X of the sleeve 2. The structure enables the flowing cooling liquid of the water-cooling screen 100 to quickly take away the radiation heat of the silicon single crystal rod absorbed by the metal tube 1 in the accommodating space 10, so that the silicon single crystal rod to be grown is quickly cooled, the pulling speed of crystal growth is improved, and the silicon single crystal rod is molded.

In the present embodiment, the sleeve 2 has a cylindrical structure. That is, the metal pipes 1 are sequentially coiled along the axial direction X of the same sleeve 2 to form the sleeve 2. The round sleeve is beneficial to production and manufacturing and is also beneficial to absorbing the radiation heat of the single crystal silicon rod. Of course, the sleeve 2 is not limited to a circular shape, and other properties, such as oval, square, triangular, etc., may be used.

To better explain the structure of the sleeve 2, the opening at one end of the sleeve 2 is defined as a front end F, and the opening at the other end thereof is defined as a rear end B. In the present embodiment, the sleeve 2 has a diameter gradually decreasing from the front end F to the rear end B in the axial direction X of the sleeve 2. The structure is favorable for matching the shape of the sleeve 2 with the shape of the single crystal silicon rod accommodated in the accommodating space 10, so that the distance between the metal tube 1 and the single crystal silicon rod is better, the sleeve 2 can better absorb radiant heat, the heat exchange effect is good, the single crystal silicon rod to be grown can be quickly cooled, the pulling speed of crystal growth is improved, and the single crystal silicon rod is molded.

In the present embodiment, the winding structure of the sleeve 2 is realized by one metal tube 1: the metal tube 1 includes a coil 11 that is sequentially wound in the axial direction X of the sleeve 2, and a first end 12 and a second end 13 that extend from the coil 11 to the front end F, respectively.

The first end portion 12 is formed by bending and extending the coil portion 11 from the front end F in a direction away from the coil portion 11. Specifically, the first end portion 12 includes a first section 121 bent and extended from the spiral portion 11 located at the front end F to a direction away from the rear end B, a second section 122 bent and extended from the first section 121 to a direction away from the axis of the sleeve 2, and a third section 123 bent and extended from the second section 122 to a direction away from the axis.

The second end 13 is formed by bending and extending the spiral part 11 from the rear end B to the front end F after passing through the accommodating space 10, and towards a direction away from the spiral part 11. Specifically, the second end portion 13 includes a fourth segment 131 bent and extended from the spiral portion 11 at the rear end B along the direction from the rear end B to the front end F, a fifth segment 132 bent and extended from the fourth segment 131 toward the direction away from the axis of the sleeve 2, and a sixth segment 134 bent and extended from the fifth segment 133 toward the direction away from the axis. Wherein, the fourth segment 131 partially abuts against the inner wall of the sleeve 2. The first end portion 12 and the second end portion 13 enable the flowing cooling liquid of the water-cooling screen 100 to quickly take away the radiation heat of the single crystal silicon rod absorbed by the metal tube 1 in the accommodating space 10, so that the single crystal silicon rod to be grown is quickly cooled, and the pulling speed of crystal growth is improved.

The second end 13 abuts against the inner wall of the sleeve 2 from the rear end B to the front end F through the receiving space 10. The structure enables the volume of the accommodating space 10 to be larger, and the part of the metal pipe 1 penetrating through the accommodating space 10 can quickly take away the absorbed radiation heat of the silicon single crystal rod through the cooling liquid, so that the silicon single crystal rod to be grown is quickly cooled, the pulling speed of crystal growth is improved, and the silicon single crystal rod is molded.

The coil 11 forms the sleeve 2. The spiral part 11 can better absorb radiation heat, has good heat exchange effect, can quickly cool the silicon single crystal rod to be grown, and improves the pulling speed of crystal growth.

Compared with the cold water screen in the related art, the structure of the water-cooling screen 100 in this embodiment increases the heat exchange surface area of the water-cooling screen 100 in the same size by pi/2 times, that is, the heat absorption surface area of the water-cooling screen 100 in this embodiment for absorbing radiation heat is large, so as to achieve the effect of obviously improving heat exchange and the effect of increasing the crystal pulling speed.

In order to better control the temperature of the single crystal silicon rod to be grown in the sleeve 2, the temperature of the single crystal silicon rod can be accurately controlled, and the water-cooling screen 100 further comprises a first valve 3 and a second valve 4. The first valve 3 is disposed at the first end portion 12, and the second valve 4 is disposed at the second end portion 13. In the present embodiment, the first valve 4 is disposed in the second section 122, and the second valve 4 is disposed in the fifth section 133.

The invention also provides a monocrystalline silicon growing furnace (not shown in the figure), which comprises a furnace body and the water screen 100 arranged inside the furnace body.

While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.

Claims

1. A water-cooling screen is applied to cooling of a silicon single crystal rod to be grown in a vacuum environment and is characterized by comprising a hollow metal tube, wherein the metal tube is filled with cooling liquid, the metal tube is sequentially wound in a spiral mode along the same axial direction to form a sleeve with an accommodating space and two open ends, the accommodating space is used for accommodating the silicon single crystal rod, and the metal tube and the accommodated silicon single crystal rod are arranged at intervals; and at least part of two ends of the metal pipe extends to the outside of the metal pipe from the sleeve, so that the cooling liquid flows in from one end of the metal pipe and flows out from the other end of the metal pipe after being coiled along the metal pipe, and the silicon single crystal rod accommodated in the accommodating space is cooled.

2. The water screen of claim 1, wherein the metal tube is made of stainless steel material and the coolant is water.

3. The water screen of claim 1, wherein the metal tube is capable of remaining sealed in a vacuum environment, and wherein the metal tube has a heat resistance temperature greater than 1000 degrees celsius.

4. The water screen of claim 1, wherein the sleeve is of cylindrical construction; the opening of sleeve one end is the front end, with the opening of the one end that the front end is relative is the rear end, the sleeve is followed the axial by the front end to the diameter of rear end diminishes gradually.

5. The water-cooling screen of claim 4, wherein the metal tube comprises a coil portion which is sequentially coiled along the axial direction of the sleeve, and a first end portion and a second end portion which respectively extend from the coil portion to the front end, and the first end portion is formed by bending and extending the coil portion from the front end to the direction away from the coil portion; the second end part is formed by bending and extending the spiral part from the rear end to the rear end after penetrating through the accommodating space and to the direction far away from the spiral part; the coil forms the sleeve.

6. The water screen of claim 5, wherein the second end portion abuts against the inner wall of the sleeve from the rear end to a portion of the front end through the receiving space.

7. The water-cooling screen of claim 6, wherein the first end portion comprises a first section bent and extended from the coiled portion at the front end in a direction away from the rear end, a second section bent and extended from the first section in a direction away from the axial center of the sleeve, and a third section bent and extended from the second section in a direction away from the axial center; the second end portion comprises a fourth section, a fifth section and a sixth section, the fourth section is located at the rear end, the spiral portion of the rear end extends in a bending mode in the direction of the front end, the fifth section extends in a bending mode in the direction of the axis of the sleeve away from the fourth section, the sixth section extends in a bending mode in the direction of the axis of the sleeve away from the fifth section, and the fourth section partially abuts against the inner wall of the sleeve.

8. The water screen of claim 7, further comprising a first valve disposed at the first end and a second valve disposed at the second end.

9. The water-cooled screen of claim 1, wherein the two ends of the metal tube are respectively arranged symmetrically along the axial direction of the sleeve.

10. A monocrystalline silicon growth furnace, characterized by comprising a furnace body and the water screen of any one of claims 1-9 installed inside the furnace body.