CN113972294A - Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof - Google Patents
Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of blue light detectors, and discloses a titanium carbide/InGaN heterojunction blue light detector and a preparation method thereof. The blue light detector comprises a substrate, a buffer layer and Ti which are arranged from bottom to top in sequence3C2/InGaN heterojunction functional layer; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are arranged from bottom to top in sequence, wherein the AlN layer is arranged on the substrate; ti3C2In the InGaN heterojunction functional layer, an InGaN layer is arranged on a GaN layer of the buffer layer, and Ti3C2The layer partially covers the InGaN layer; the blue light detector also comprises a metal layer electrode arranged on Ti3C2On the layer and on the uncovered InGaN layer.The invention also discloses a preparation method of the blue light detector. The detector has higher quantum efficiency of blue light wave band, enhances blue light resonance absorption and realizes high-sensitivity and high-bandwidth detection.
Description
Technical Field
The invention belongs to the field of visible light detectors,in particular to titanium carbide (Ti)3C2) An InGaN heterojunction blue light detector and a preparation method thereof.
Background
With the development of electronic information technology, integrated electronic circuits have also developed rapidly, wherein semiconductor materials play a crucial role. Compared with the first two generations of semiconductor materials, the third generation semiconductor material has wider forbidden band width, higher breakdown field strength and larger electron saturation rate, and particularly the III group nitride material can realize the continuously adjustable band gap from 0.7eV (near infrared) to 6.2eV (ultraviolet), so that the III group nitride material is widely applied to the preparation of photoelectric detector devices with visible light wave bands.
The InGaN material, one of the hot spots in the research of the third generation semiconductor material, has good physicochemical properties. It has high electron mobility, excellent thermal stability and chemical stability. By adjusting the In component In the alloy, the continuous adjustment of the forbidden band width from 3.4eV to 0.7eV can be realized, so that the InGaN detector can realize the continuous detection covering the whole visible light wave band.
Although research on preparation of InGaN-based detector devices has made some progress, no commercial transformation has been achieved so far. The main problem restricting the development and application of the InGaN detector is the structural design and the process of the device. On one hand, the performance of the device is greatly influenced by the defects of the structural design of the device, so that the device has low responsivity, narrow bandwidth and low sensitivity. Meanwhile, the performance and production of the device are greatly limited due to the incomplete preparation process.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the invention aims to provide a titanium carbide/InGaN heterojunction blue light detector and a preparation method thereof. The invention adopts Ti3C2The blue light detector prepared by the InGaN heterojunction structure has the following advantages: 1) dislocation is reduced and stress is released through the AlN/AlGaN/GaN buffer layer, so that the defect density is increased from 108Reduced to 105And the quality of the grown InGaN material is better. 2) Ti can be transferred by wet process3C2Directly transferring to InGaN, and simple operationTo better quality Ti3C2an/InGaN heterojunction structure. 3) Ti3C2And InGaN by van der waals forces. Incident light is irradiated on Ti3C2When the InGaN device works in an effective working area, photo-generated carriers move oppositely under the action of an internal electric field to generate photo-generated current. The device has better self-powered characteristics. 4) Ti3C2Has high light transmission and conductivity, enhanced response of InGaN blue light detector, and dark current of 10-6A is reduced to 10-7And A, the carrier injection efficiency is enhanced, and the electric leakage is reduced.
The purpose of the invention is realized by the following technical scheme:
titanium carbide/InGaN heterojunction blue light detector (namely Ti)3C2/InGaN heterojunction blue light detector) comprising a substrate, a buffer layer, and Ti3C2/InGaN heterojunction functional layer; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are arranged from bottom to top in sequence, wherein the AlN layer is arranged on the substrate; ti3C2In the InGaN heterojunction functional layer, an InGaN layer is arranged on a GaN layer of the buffer layer, and Ti3C2The layer partially covers the InGaN layer;
the titanium carbide/InGaN heterojunction blue light detector further comprises a metal layer electrode, and the metal layer electrode is arranged on Ti3C2On the layer and on the uncovered InGaN layer.
Ti3C2The thickness of an InGaN layer in the/InGaN heterojunction functional layer is 50-150 nm, and the thickness of Ti3C2The layer is 30 to 50 nm.
The substrate is a Si substrate.
In the buffer layer, the AlN layer, the AlGaN layer and the GaN layer are 350-450 nm, 400-500 nm and 3.5-4.5 mu m in thickness respectively.
The metal layer electrode is a Ti/Au metal layer, and the Ti layer is arranged on the Ti3C2On the/InGaN heterojunction functional layer; i.e., the InGaN upper metal layer electrode is a Ti/Au metal layer (Ti is disposed on the InGaN), Ti3C2The upper metal layer electrode is Ti/Au (Ti is arranged on Ti)3C2Upper);
the thickness of the Ti metal layer is 100-110 nm, and the thickness of the Au metal layer is 100-110 nm.
Ti3C2The layer partially covering the InGaN layer is Ti3C2The layers form mesas (step-like levels) on the InGaN layer;
the metal layer electrode is arranged on Ti3C2Layered and uncovered InGaN layer means that the metal layer electrode is disposed on Ti3C2On the layer and on the mesa of the InGaN layer.
The Ti3C2The preparation method of the/InGaN heterojunction blue light detector comprises the following steps:
(1) growing a buffer layer on the substrate by adopting an MOCVD method, and then growing an InGaN layer on the buffer layer; the substrate is pretreated before use, specifically, acetone and ethanol are respectively used for ultrasonic cleaning for 3 minutes;
(2) the first photolithography is used to prepare the required pattern on the InGaN (i.e., the photoresist covers part of the InGaN layer to form the required Ti3C2Layer region) and then wet transferring Ti3C2Transferring to InGaN layer (i.e., the portion not covered by the photoresist), removing the photoresist on the InGaN layer, and then performing a second photolithography on Ti3C2And preparing patterns of the required electrodes on the layer and the InGaN layer, finally evaporating the metal layer electrode by an evaporation process, and removing glue to obtain the heterojunction blue light detector.
The first photoetching is to spin, bake, expose and develop the glue, and prepare the needed pattern on the InGaN layer; drying the glue at the temperature of 100-110 ℃; the photoetching time is 15-20 s; the drying time is 45-55 s, the exposure time is 10-12 s, and the developing time is 50-60 s.
The second photoetching is glue homogenizing, glue drying, exposure, development and etching on Ti3C2Preparing needed patterns on the layer and the InGaN layer; drying the glue at the temperature of 100-110 ℃; the photoetching time is 15-20 s; the drying time is 45-55 s, the exposure time is 10-12 s, and the developing time is 50-60 s.
The evaporation rate of the metal layer electrode is 0.20-0.25 nm/min.
The growth buffer layer is formed by sequentially epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on a substrate from bottom to top by adopting an MOCVD method, wherein the temperatures of the AlN layer, the AlGaN layer and the GaN layer are 1150-1250 ℃, 1150-1250 ℃ and 1050-1200 ℃ respectively.
When each buffer layer grows, the raw materials adopted by each layer are Al source, Ga source and NH3(ii) a The flow rate is 100-150 sccm.
The temperature for growing the InGaN layer on the buffer layer by adopting an MOCVD method is 650-850 ℃. The raw materials are In source and Ga source, NH3The flow rate is 100-150 sccm.
Compared with the prior art, the invention has the following beneficial effects and advantages:
(1) the invention adopts MOCVD high temperature epitaxy method combined with MOCVD low temperature epitaxy method, firstly growing AlN/AlGaN/GaN buffer layer on Si substrate, then growing InGaN layer on the buffer layer, and then transferring Ti by wet method3C2Directly transferring to InGaN, and respectively depositing on Ti by photolithography3C2The Ti/Au electrode is manufactured on the InGaN to realize the Ti3C2/InGaN heterojunction blue light detector. The preparation method has the characteristics of simple process, time saving, high efficiency and low energy consumption, and is beneficial to large-scale production.
(2) The heterojunction structure blue light detector of the invention passes Ti3C2the/InGaN heterojunction structure has the advantages that photo-generated carriers move oppositely under the action of an internal electric field to generate photo-generated current. The device has self-powered characteristics.
(3) The heterojunction structure blue light detector of the invention passes Ti3C2An InGaN heterojunction structure that achieves high responsivity in the blue band. By passing Ti3C2High light transmission and electric conductivity, enhanced response of InGaN blue light detector, dark current of 10-6A is reduced to 10-7And A, the carrier injection efficiency is enhanced, and the electric leakage is reduced.
(4) The device structure and parameters of the invention improve the quantum efficiency of the blue light wave band; designing Ti on the surface of InGaN layer3C2Layer feedingAnd the heterojunction functional layer is designed, so that blue light resonance absorption is effectively enhanced, and high-sensitivity and high-bandwidth detection is realized. Therefore, the detector of the invention has higher quantum efficiency of blue light wave band, enhanced blue light resonance absorption and high sensitivity and high bandwidth detection.
Drawings
FIG. 1 shows Ti provided by the present invention3C2The structural section schematic diagram of the/InGaN heterojunction structure blue light detector;
FIG. 2 shows Ti prepared in example 13C2Current-voltage curve diagram of/InGaN heterojunction structure blue light detector with Ti3C2The layers correspond to the blue detector prepared in example 1;
FIG. 3 shows Ti prepared in example 13C2The spectrum response curve of the/InGaN heterojunction structure blue light detector.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Ti of the invention3C2The structural cross section schematic diagram of the/InGaN heterojunction structure blue light detector is shown in FIG. 1; the blue light detector comprises a substrate 1, a buffer layer 2 and Ti which are arranged from bottom to top in sequence3C2/InGaN heterojunction functional layer; the buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer which are arranged from bottom to top in sequence, wherein the AlN layer is arranged on the substrate 1; ti3C2In the InGaN heterojunction functional layer, an InGaN layer 3 is arranged on a GaN layer of a buffer layer 2, and Ti3C2Layer 4 partially covers InGaN layer 3;
the Ti3C2the/InGaN heterojunction blue light detector also comprises a metal layer electrode 5, wherein the metal layer electrode 5 is arranged on Ti3C2On layer 4 and on the uncovered InGaN layer 3.
Ti3C2The thickness of an InGaN layer in the/InGaN heterojunction functional layer is 50-150 nm, and the thickness of Ti3C2The layer is 30 to 50 nm.
The substrate 1 is a Si substrate.
In the buffer layer 2, the AlN layer, the AlGaN layer and the GaN layer are respectively 350-450 nm, 400-500 nm and 3.5-4.5 mu m in thickness.
The metal layer electrode 5 is a Ti/Au metal layer, and the Ti layer is arranged on the Ti3C2On the/InGaN heterojunction functional layer; i.e., the InGaN upper metal layer electrode is a Ti/Au metal layer (Ti is disposed on the InGaN), Ti3C2The upper metal layer electrode is Ti/Au (Ti is arranged on Ti)3C2Upper);
the thickness of the Ti metal layer is 100-110 nm, and the thickness of the Au metal layer is 100-110 nm.
Ti3C2The layer partially covering the InGaN layer is Ti3C2Forming a mesa on the InGaN layer;
the metal layer electrode is arranged on Ti3C2Layered and uncovered InGaN layer means that the metal layer electrode is disposed on Ti3C2On the layer and on the mesa of the InGaN layer.
Example 1
This example provides a Ti3C2The InGaN heterojunction blue light detector comprises a substrate, a buffer layer, an InGaN layer and Ti which are sequentially arranged from bottom to top3C2And (3) a layer. Ti3C2The layer partially covers the InGaN layer. The buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the AlN layer, the AlGaN layer and the GaN layer are 400nm, 450nm and 4 mu m respectively in thickness. The InGaN layer is disposed on the GaN layer of the buffer layer. The substrate is a Si substrate; InGaN layer thickness of 100nm, Ti3C2The thickness of the layer was 40 nm. The Ti3C2the/InGaN heterojunction blue light detector also comprises a metal layer electrode arranged on Ti3C2On the layer and on the uncovered InGaN layer. The metal layer electrode is a Ti/Au metal layer, the Ti/Au metal layer is a Ti metal layer and an Au metal layer which are arranged from bottom to top, the thickness of the Ti metal layer is 105nm, and the thickness of the Au metal layer is 105 nm.
The embodiment also provides a method for preparing the blue light detector, which comprises the following steps:
(1) growing a buffer layer on the substrate by adopting an MOCVD method, and then growing an InGaN layer on the buffer layer;
(2) spin coating, drying, exposing and developing on the upper surface of the InGaN layer, and photoetching on the InGaN layer to obtain Ti3C2A transfer area; ti is transferred by a wet method3C2Transferring to InGaN layer, and naturally air drying at 25 deg.C to obtain Ti3C2an/InGaN heterojunction;
(3) after removing the photoresist of the first photolithography, at Ti3C2Second photolithography on the/InGaN heterojunction layer, on Ti3C2Homogenizing, drying, exposing and developing the upper surface of the InGaN heterojunction layer, determining the shape of the electrode, and evaporating the metal layer electrode on Ti by an evaporation process3C2Layers and InGaN layers.
The step of growing the buffer layer on the substrate by adopting the MOCVD method means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate by adopting the MOCVD method from bottom to top, and the temperatures of the AlN layer, the AlGaN layer and the GaN layer are 1200 ℃, 1200 ℃ and 1100 ℃ respectively.
The temperature for growing the InGaN layer on the buffer layer using the MOCVD method was 700 ℃.
In the step (2), the drying time is 50s, the drying temperature is 105 ℃, the exposure time is 11s, and the development time is 55 s. The evaporation rate of the metal layer electrode is 0.225 nm/min.
The blue light detector prepared in this example was tested.
FIG. 2 shows Ti prepared in example 13C2Current-voltage curve diagram of/InGaN heterojunction structure blue light detector with Ti3C2The layers correspond to the blue detector prepared in example 1.
Fig. 3 is a spectrum response curve of the blue light detector obtained in this embodiment. As can be seen from the graph, the photocurrent at 420nm was 0.019W. The detector has higher quantum efficiency and higher sensitivity in the blue light band.
Example 2
This example provides a Ti3C2The InGaN heterojunction blue light detector comprises a substrate, a buffer layer and an InGaN layer which are sequentially arranged from bottom to topAnd Ti3C2And (3) a layer. Ti3C2The layer partially covers the InGaN layer. The buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the AlN layer, the AlGaN layer and the GaN layer are respectively 450nm, 500nm and 4.5 mu m in thickness. The InGaN layer is disposed on the GaN layer of the buffer layer. The substrate is a Si substrate; InGaN layer thickness of 150nm, Ti3C2The thickness of the layer was 50 nm. The Ti3C2the/InGaN heterojunction blue light detector also comprises a metal layer electrode arranged on Ti3C2On the layer and on the uncovered InGaN layer. The metal layer electrode is a Ti/Au metal layer, the Ti/Au metal layer is a Ti metal layer and an Au metal layer which are arranged from bottom to top, the thickness of the Ti metal layer is 110nm, and the thickness of the Au metal layer is 110 nm.
The embodiment also provides a method for preparing the blue light detector, which comprises the following steps:
(1) growing a buffer layer on the substrate by adopting an MOCVD method, and then growing an InGaN layer on the buffer layer;
(2) spin coating, drying, exposing and developing on the upper surface of the InGaN layer, and photoetching on the InGaN layer to obtain Ti3C2A transfer area; ti is transferred by a wet method3C2Transferring to InGaN layer, and naturally air drying at 25 deg.C to obtain Ti3C2an/InGaN heterojunction;
(3) after removing the photoresist of the first photolithography, at Ti3C2Second photolithography on the/InGaN heterojunction layer, on Ti3C2Homogenizing, drying, exposing and developing the upper surface of the InGaN heterojunction layer, determining the shape of the electrode, and evaporating the metal layer electrode on Ti by an evaporation process3C2Layers and InGaN layers.
The step of growing the buffer layer on the substrate by adopting the MOCVD method means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate by adopting the MOCVD method from bottom to top in sequence, and the temperatures for growing the AlN layer, the AlGaN layer and the GaN layer are 1250 ℃, 1250 ℃ and 1200 ℃ respectively.
The temperature for growing the InGaN layer on the buffer layer using the MOCVD method was 850 ℃.
In the step (2), the drying time is 55s, the drying temperature is 100 ℃, the exposure time is 12s, and the development time is 50 s. The evaporation rate of the metal layer electrode is 0.25 nm/min.
Example 3
This example provides a Ti3C2The InGaN heterojunction blue light detector comprises a substrate, a buffer layer, an InGaN layer and Ti which are sequentially arranged from bottom to top3C2And (3) a layer. Ti3C2The layer partially covers the InGaN layer. The buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the AlN layer, the AlGaN layer and the GaN layer are respectively 350nm, 400nm and 3.5 mu m in thickness. The InGaN layer is disposed on the GaN layer of the buffer layer. The substrate is a Si substrate; InGaN layer thickness of 50nm, Ti3C2The thickness of the layer was 30 nm. The Ti3C2the/InGaN heterojunction blue light detector also comprises a metal layer electrode arranged on Ti3C2On the layer and on the uncovered InGaN layer. The metal layer electrode is a Ti/Au metal layer, the Ti/Au metal layer is a Ti metal layer and an Au metal layer which are arranged from bottom to top, the thickness of the Ti metal layer is 100nm, and the thickness of the Au metal layer is 100 nm.
The embodiment also provides a method for preparing the multi-quantum well blue light detector, which comprises the following steps:
(1) growing a buffer layer on the substrate by adopting an MOCVD method, and then growing an InGaN layer on the buffer layer;
(2) spin coating, drying, exposing and developing on the upper surface of the InGaN layer, and photoetching on the InGaN layer to obtain Ti3C2A transfer area; ti is transferred by a wet method3C2Transferring to InGaN layer, and naturally air drying at 25 deg.C to obtain Ti3C2an/InGaN heterojunction;
(3) after removing the photoresist of the first photolithography, at Ti3C2Second photolithography on the/InGaN heterojunction layer, on Ti3C2Homogenizing, drying, exposing and developing the upper surface of the InGaN heterojunction layer, determining the shape of the electrode, and evaporating the metal layer electrode on Ti by an evaporation process3C2Layers and InGaN layers.
The step of growing the buffer layer on the substrate by adopting the MOCVD method means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate by adopting the MOCVD method from bottom to top in sequence, and the temperatures for growing the AlN layer, the AlGaN layer and the GaN layer are 1150 ℃, 1150 ℃ and 1050 ℃ respectively.
The temperature for growing the InGaN layer on the buffer layer using the MOCVD method was 850 ℃.
In the step (2), the drying time is 45s, the drying temperature is 110 ℃, the exposure time is 10 s, and the development time is 60 s. The evaporation rate of the metal layer electrode is 0.20 nm/min.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (9)
1. A titanium carbide/InGaN heterojunction blue light detector is characterized in that: comprises a substrate, a buffer layer and Ti which are arranged from bottom to top in sequence3C2/InGaN heterojunction functional layer; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are arranged from bottom to top in sequence, wherein the AlN layer is arranged on the substrate; ti3C2In the InGaN heterojunction functional layer, an InGaN layer is arranged on a GaN layer of the buffer layer, and Ti3C2The layer partially covers the InGaN layer;
the titanium carbide/InGaN heterojunction blue light detector further comprises a metal layer electrode, and the metal layer electrode is arranged on Ti3C2On the layer and on the uncovered InGaN layer.
2. The titanium carbide/InGaN heterojunction blue light detector of claim 1, wherein: ti3C2The thickness of an InGaN layer in the/InGaN heterojunction functional layer is 50-150 nm, and the thickness of Ti3C2The layer is 30 to 50 nm.
3. The titanium carbide/InGaN heterojunction blue light detector of claim 1, wherein: the substrate is a Si substrate;
in the buffer layer, the AlN layer, the A1GaN layer and the GaN layer are 350-450 nm, 400-500 nm and 3.5-4.5 mu m in thickness respectively.
4. The titanium carbide/InGaN heterojunction blue light detector of claim 1, wherein: the metal layer electrode is a Ti/Au metal layer, and the Ti layer is arranged on Ti3C2On the/InGaN heterojunction functional layer; i.e. the metal layer electrode on the InGaN layer is a Ti/Au metal layer, Ti3C2The upper metal layer electrode is Ti/Au;
the thickness of the Ti metal layer is 100-110 nm, and the thickness of the Au metal layer is 100-110 nm.
5. The titanium carbide/InGaN heterojunction blue light detector of claim 1, wherein:
the Ti3C2The layer partially covering the InGaN layer is Ti3C2Forming a mesa on the InGaN layer;
the metal layer electrode is arranged on Ti3C2Layered and uncovered InGaN layer means that the metal layer electrode is disposed on Ti3C2On the layer and on the mesa of the InGaN layer.
6. The preparation method of the titanium carbide/InGaN heterojunction blue light detector according to any one of claims 1 to 5, wherein:
(1) growing a buffer layer on the substrate by adopting an MOCVD method, and then growing an InGaN layer on the buffer layer;
(2) preparing a required pattern, namely required Ti on InGaN by first photoetching3C2Layer area, then Ti is transferred by wet method3C2Transferring to InGaN layer, removing photoresist on the InGaN layer, and performing second photolithography on Ti3C2And preparing patterns of the required electrodes on the layer and the InGaN layer, finally evaporating the metal layer electrode by an evaporation process, and removing glue to obtain the heterojunction blue light detector.
7. The method for preparing the titanium carbide/InGaN heterojunction blue light detector according to claim 6, wherein: the growth buffer layer is formed by sequentially epitaxially growing an A1N layer, an AlGaN layer and a GaN layer on a substrate from bottom to top by adopting an MOCVD method, wherein the temperatures for growing the AlN layer, the AlGaN layer and the GaN layer are 1150-1250 ℃, 1150-1250 ℃ and 1050-1200 ℃ respectively;
growing the InGaN layer on the buffer layer means growing the InGaN layer on the buffer layer by an MOCVD method, wherein the temperature is 650-850 ℃.
8. The method for preparing the titanium carbide/InGaN heterojunction blue light detector according to claim 6, wherein: the evaporation rate of the metal layer electrode is 0.20-0.25 nm/min;
the first photoetching is to spin, bake, expose and develop the glue, and prepare the needed pattern on the InGaN layer; drying the glue at the temperature of 100-110 ℃; the photoetching time is 15-20 s; the drying time is 45-55 s, the exposure time is 10-12 s, and the developing time is 50-60 s;
the second photoetching is glue homogenizing, glue drying, exposure, development and etching on Ti3C2Preparing needed patterns on the layer and the InGaN layer; drying the glue at the temperature of 100-110 ℃; the photoetching time is 15-20 s; the drying time is 45-55 s, the exposure time is 10-12 s, and the developing time is 50-60 s.
9. The application of the titanium carbide/InGaN heterojunction blue light detector as claimed in any one of claims 1 to 5, wherein: the titanium carbide/InGaN heterojunction blue light detector is used for blue light detection.
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