CN110459628A - A kind of multiple quantum wells blue light detector and preparation method and application - Google Patents
A kind of multiple quantum wells blue light detector and preparation method and application Download PDFInfo
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Abstract
The invention discloses a kind of multiple quantum wells blue light detector and preparation method and applications, the detector includes the substrate successively arranged from top to bottom, buffer layer and GaN/InGaN multiple quantum well layer, the upper surface of GaN/InGaN multiple quantum well layer connects metal layer electrode, buffer layer is AlN layer, AlGaN layer and the GaN layer successively arranged from top to bottom, GaN/InGaN multiple quantum well layer is the successively GaN layer and InGaN layer of alternating growth on the buffer layer, the period of alternating growth is 6 ~ 8, GaN layer with a thickness of 12 ~ 15 nm, InGaN layer with a thickness of 3 ~ 5nm.By optimizing the chip parameter of sensitive detection parts, the quantum efficiency of blue wave band is improved；The design of blue light enhanced sensitivity micro-nano structure is carried out on detection chip surface, surface is effectively reduced to the reflection loss of blue light, enhances blue light resonance absorbing, realizes highly sensitive high bandwidth detection.
Description
Technical field
The present invention relates to visible-light detector field, in particular to a kind of multiple quantum wells (MQW) blue light detector and preparation
Method and application.
Background technique
III-nitride semiconductor material possesses excellent optics, electricity, calorifics, chemistry, mechanical performance, therefore, III race
Nitride optoelectronic devices and power device have obtained the extensive concern and primary study of domestic and international scientific research personnel.
InGaN material as one of third generation semiconductor material research hotspot possesses good physicochemical properties.It
Electron mobility it is high, thermal stability is good, chemical stability is good.It can realize that forbidden band is wide by adjusting the component of In in alloy
Continuously adjusting from 3.4 eV to 0.7 eV is spent, so that InGaN detector can be realized the entire visible light wave range of covering
Continuous probe, compare photomultiplier tube, InGaN detector have it is small in size, portable, easy of integration, breakdown electric field is high by (> 1
MV/cm), operating voltage is low, energy conservation and environmental protection, is not necessarily to the advantages such as filter system.
Although InGaN base material for detector increment study achieves certain progress, up to the present not yet
Realize commodity conversion.The root problem for restricting the development of InGaN detector and application is quality of materials problem.On the one hand, due to
There is biggish lattice mismatch (> 16.9%) between InGaN and Si substrate, thus be also easy to produce in InGaN epitaxial layer compared with
Highdensity dislocation.On the other hand, since InGaN material is easy to happen split-phase, the special In component the high more is easy to happen split-phase.
Meanwhile InGaN is grown in GaN material, since there are lattice mismatches between InGaN and GaN, as thickness increase can relax
Henan generates defect, these all can serve as capture carrier.To reduce carrier transport characteristic, lead to InGaN detector
Quantum efficiency decline influences response speed and sensitivity etc..
Summary of the invention
In order to solve problem above, the purpose of the present invention is to provide a kind of multiple quantum wells (MQW) blue light detector and systems
Preparation Method and application, prepare blue light detector using GaN/InGaN mqw material.It is with advantage following prominent: one,
GaN/InGaN MQW has superlattice structure, and InGaN thickness is lower, the non-relaxation of material, can reduce defect generation, quality of materials
More preferably；Two, directly growth InGaN is more difficult, easily occurs mutually to separate.Using GaN/InGaN MQW due to InGaN film thickness
Lower, reduction mutually separates, and improves the crystal quality of InGaN material, to obtain high-performance blue light detector, has quantum efficiency
The advantages that height, fast response time and high sensitivity, after tested, response time, shorten to 300 ms by 500 ms；Three, by slow
Rush on layer the successively GaN layer and InGaN layer of alternating growth, 6 ~ 8 periods of alternating growth, by the thickness control of GaN layer 12 ~ 15
Nm, the thickness control of InGaN layer make the surface InGaN have more richness In clusters, make GaN/InGaN multiple quantum wells material in 3 ~ 5nm
Material, which prepares blue light detector, higher quantum efficiency；Four, by AlN/AlGaN/GaN buffer layer, dislocation is filtered, release is answered
Power makes defect concentration by 109It is reduced to 106, keep the InGaN quality of materials of growth more preferable；Five, pass through Ti/Ni/Au metal layer, system
Make Schottky contact electrode, dark current is by 10-6A is reduced to 10-7A enhances Carrier Injection Efficiency, reduces electric leakage.
The purpose of the present invention is realized at least by one of following technical scheme.
The present invention provides a kind of multiple quantum wells blue light detector, including successively arrange from top to bottom substrate, buffer layer,
GaN/InGaN multiple quantum well layer and metal layer electrode, buffer layer are AlN layer, AlGaN layer and the GaN successively to arrange from top to bottom
Layer, GaN/InGaN multiple quantum well layer are the successively GaN layer and InGaN layer of alternating growth on the buffer layer, the period of alternating growth
Be 6 ~ 8, GaN layer with a thickness of 12 ~ 15 nm, InGaN layer with a thickness of 3 ~ 5nm.
Preferably, substrate is Si substrate.
Preferably, AlN layers, the thickness of AlGaN layer and GaN layer be respectively 300 ~ 400 nm, 600 ~ 700 nm, 3 ~ 4 μm.
Preferably, the shape of electrode is interdigital electrode；Metal layer electrode is Ti/Ni/Au metal layer, Ti/Ni/Au metal layer
For the Ti metal layer, Ni metal layer and Au metal layer arranged from top to bottom, Ti metal layer with a thickness of 20 ~ 30nm, Ni metal layer
With a thickness of 100 ~ 110nm, Au metal layer with a thickness of 100 ~ 110nm.
The present invention also provides the methods for preparing the multiple quantum wells blue light detector, comprising the following steps:
(1) using MOCVD method grown buffer layer, then growth InGaN/GaN multiple quantum well layer on the buffer layer on substrate；
(2) photoetching is carried out on GaN/InGaN multiple quantum well layer, the upper surface spin coating of GaN/InGaN multiple quantum well layer, drying,
Exposure, development and oxonium ion processing, determine electrode shape, and metal layer electrode is vaporized on GaN/InGaN by evaporation process
Multiple quantum well layer upper surface.
Preferably, using MOCVD method successively epitaxial growth AlN layers, AlGaN layer and GaN layer from top to bottom on substrate
Temperature be respectively 1100 ~ 1200 DEG C, 1100 ~ 1200 DEG C and 1000 ~ 1150 DEG C.
Preferably, MOCVD method is used to grow the temperature of GaN/InGaN multiple quantum well layer on the buffer layer for 600 ~ 750
℃。
Preferably, drying time is 40 ~ 50 s, and the time for exposure is 5 ~ 10 s, and developing time is 40 ~ 50 s, at oxonium ion
The reason time is 2 ~ 3 min.
Preferably, the evaporation rate of metal layer electrode is 0.23 ~ 0.28 nm/min.
The present invention also provides application of the multiple quantum wells blue light detector in blue light detection.
Compared to the prior art, the invention has the advantages that and advantage:
(1) a kind of multiple quantum wells blue light detector provided by the invention, first on a si substrate using MOCVD high temperature epitaxy method
Growing AIN/AlGaN/GaN buffer layer grows GaN/InGaN volume in conjunction with MOCVD low-temperature epitaxy method on the buffer layer
Sub- well layer, then by photoetching evaporation process, Ti/Ni/Au metal layer electrode is made on GaN/InGaN multiple quantum well layer, it realizes
GaN/InGaN multiple quantum wells blue light detector.Preparation method has the characteristics that simple process, time-saving and efficiency and low energy consumption,
Be conducive to large-scale production.
(2) a kind of multiple quantum wells blue light detector provided by the invention is realized by GaN/InGaN multiple quantum well layer
The high-speed response of blue wave band；Optimization design blue light detector and array structure on this basis, effectively improve response speed.
(3) a kind of multiple quantum wells blue light detector provided by the invention makes institute by optimizing the chip parameter of sensitive detection parts
It obtains multiple quantum wells blue light detector and possesses higher quantum efficiency in blue wave band；It is micro- that blue light enhanced sensitivity is carried out on detection chip surface
Micro-nano structure design is effectively reduced surface to the reflection loss of blue light, enhances blue light resonance absorbing, realizes that highly sensitive high bandwidth is visited
It surveys.
Detailed description of the invention
Fig. 1 is the structural profile illustration of multiple quantum wells blue light detector provided by the invention；
Fig. 2 is the vertical view face schematic diagram of the electrode structure of multiple quantum wells blue light detector provided by the invention；
Fig. 3 is the X ray diffracting spectrum of multiple quantum wells blue light detector prepared by implementation 1；
Fig. 4 is the transmission electron microscope overhead view image of multiple quantum wells blue light detector prepared by implementation 1；
Fig. 5 is the PL curve graph of multiple quantum wells blue light detector prepared by embodiment 1；
Fig. 6 is the photocurrent curve figure of multiple quantum wells blue light detector prepared by embodiment 1；
Fig. 7 is the dark current curve graph of multiple quantum wells blue light detector prepared by embodiment 1；
In Fig. 1,1- substrate；2- buffer layer；3-GaN/InGaN multiple quantum well layer；4- metal layer electrode.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail, embodiments of the present invention are not limited thereto.
Embodiment 1
A kind of multiple quantum wells blue light detector is present embodiments provided, as shown in Figure 1, including the substrate successively arranged from top to bottom
1, the upper surface of buffer layer 2 and GaN/InGaN multiple quantum well layer 3, GaN/InGaN multiple quantum well layer 3 connects metal layer electrode 4,
Buffer layer 2 is AlN layer, AlGaN layer and the GaN layer successively arranged from top to bottom, and GaN/InGaN multiple quantum well layer 3 is to buffer
The GaN layer and InGaN layer of successively alternating growth on layer 2, the period of alternating growth are 6, GaN layer with a thickness of 12 nm, InGaN
Layer with a thickness of 3 nm.
Substrate 1 is Si substrate；AlN layers, the thickness of AlGaN layer and GaN layer be respectively 300 nm, 600 nm, 3 μm.
As shown in Fig. 2, the shape of electrode is interdigital electrode, metal layer electrode 4 is Ti/Ni/Au metal layer, Ti/Ni/Au gold
Belonging to layer is the Ti metal layer, Ni metal layer and Au metal layer arranged from top to bottom, Ti metal layer with a thickness of 20 nm, Ni metal
Layer with a thickness of 100 nm, Au metal layer with a thickness of 100 nm.
The present embodiment additionally provides the method for preparing the multiple quantum wells blue light detector, comprising the following steps:
(1) MOCVD method grown buffer layer 2 on substrate 1 is used, then grows InGaN/GaN multiple quantum wells on the buffer layer 2
Layer 3；
(2) photoetching is carried out on GaN/InGaN multiple quantum well layer 3, in the 3 upper surface spin coating of GaN/InGaN multiple quantum well layer, is dried
Dry, exposure, development and oxonium ion processing determine electrode shape, and metal layer electrode 4 are vaporized on GaN/ by evaporation process
3 upper surface of InGaN multiple quantum well layer.
Using MOCVD method on substrate 1 successively epitaxial growth AlN layers, the temperature of AlGaN layer and GaN layer from top to bottom
Respectively 1100 DEG C, 1100 DEG C and 1000 DEG C.
MOCVD method is used to grow the temperature of GaN/InGaN multiple quantum well layer 3 on the buffer layer 2 for 600 DEG C.
Drying time is 40 s, and the time for exposure is 5 s, and developing time is 40 s, and oxonium ion handles the time as 2 min.
The evaporation rate of metal layer electrode 4 is 0.23 nm/min.
Multiple quantum wells blue light detector manufactured in the present embodiment is tested.
Fig. 3 is the X ray diffracting spectrum of multiple quantum wells blue light detector obtained by the present embodiment, it can be seen that each film range upon range of mountains
Position is all fairly obvious.By comparing with each peak of standard, test peak is essentially coincided with base peak.It can be seen that by MOCVD technology,
The preferable AlN/AlGaN/GaN buffer layer of mass is grown on a si substrate, and grows the preferable GaN/ of mass on the buffer layer
InGaN multiple quantum well layer, and there are more richness In clusters on the surface InGaN.
Fig. 4 is the transmission electron microscope overhead view image of multiple quantum wells blue light detector obtained by the present embodiment, here it is apparent that logical
MOCVD technology is crossed, grows uniform and good period GaN/InGaN multiple quantum well layer, and the surface InGaN on the buffer layer
There are more richness In clusters.
Fig. 5 is the PL curve of multiple quantum wells blue light detector obtained by the present embodiment.It can be seen that have at 450 nm by curve
Extremely significant wave crest.Illustrate that the detector possesses higher quantum efficiency in blue wave band, therefore possesses height in blue wave band
The response of speed.
Fig. 6 is the photocurrent curve of multiple quantum wells blue light detector obtained by the present embodiment.It can be seen that by curve, in 450 nm
Place, photoelectric current are 0.0712 A.Illustrate that the detector possesses higher quantum efficiency and higher sensitivity in blue wave band.
Fig. 7 is the dark current curve of multiple quantum wells blue light detector obtained by the present embodiment, and as seen from the figure, production electrode is Xiao
Te Ji contact, dark current reach 10-7A, illustrates Carrier Injection Efficiency height, which possesses high speed in blue wave band
Response.
Embodiment 2
A kind of multiple quantum wells blue light detector is present embodiments provided, as shown in Figure 1, including the substrate successively arranged from top to bottom
1, the upper surface of buffer layer 2 and GaN/InGaN multiple quantum well layer 3, GaN/InGaN multiple quantum well layer 3 connects metal layer electrode 4,
Buffer layer 2 is AlN layer, AlGaN layer and the GaN layer successively arranged from top to bottom, and GaN/InGaN multiple quantum well layer 3 is to buffer
The GaN layer and InGaN layer of successively alternating growth on layer 2, the period of alternating growth are 7, GaN layer with a thickness of 13 nm, InGaN
Layer with a thickness of 4 nm.
Substrate 1 is Si substrate；AlN layers, the thickness of AlGaN layer and GaN layer be respectively 350 nm, 650 nm, 3.5 μm.
As shown in Fig. 2, metal layer electrode 4 is Ti/Ni/Au metal layer, Ti/Ni/Au metal layer is arranged from top to bottom
Ti metal layer, Ni metal layer and Au metal layer, Ti metal layer with a thickness of 25 nm, Ni metal layer with a thickness of 105 nm, Au gold
Belong to layer with a thickness of 105 nm.
The present embodiment additionally provides the method for preparing the multiple quantum wells blue light detector, comprising the following steps:
(1) MOCVD method grown buffer layer 2 on substrate 1 is used, then grows InGaN/GaN multiple quantum wells on the buffer layer 2
Layer 3；
(2) photoetching is carried out on GaN/InGaN multiple quantum well layer 3, in the 3 upper surface spin coating of GaN/InGaN multiple quantum well layer, is dried
Dry, exposure, development and oxonium ion processing determine electrode shape, and metal layer electrode 4 are vaporized on GaN/ by evaporation process
3 upper surface of InGaN multiple quantum well layer.
Using MOCVD method on substrate 1 successively epitaxial growth AlN layers, the temperature of AlGaN layer and GaN layer from top to bottom
Respectively 1150 DEG C, 1150 DEG C and 1050 DEG C.
MOCVD method is used to grow the temperature of GaN/InGaN multiple quantum well layer 3 on the buffer layer 2 for 700 DEG C.
Drying time is 45 s, and the time for exposure is 7 s, and developing time is 47 s, and oxonium ion handles the time as 2.5 min.
The evaporation rate of metal layer electrode 4 is 0.25 nm/min.
Multiple quantum wells blue light detector manufactured in the present embodiment is tested.
The correlated performance and embodiment 1 of multiple quantum wells blue light detector manufactured in the present embodiment are similar, correlation performance parameters
It can refer to the respective drawings of embodiment 1.
Embodiment 3
A kind of multiple quantum wells blue light detector is present embodiments provided, as shown in Figure 1, including the substrate successively arranged from top to bottom
1, the upper surface of buffer layer 2 and GaN/InGaN multiple quantum well layer 3, GaN/InGaN multiple quantum well layer 3 connects metal layer electrode 4,
Buffer layer 2 is AlN layer, AlGaN layer and the GaN layer successively arranged from top to bottom, and GaN/InGaN multiple quantum well layer 3 is to buffer
The GaN layer and InGaN layer of successively alternating growth on layer 2, the period of alternating growth are 8, GaN layer with a thickness of 15 nm, InGaN
Layer with a thickness of 5 nm.
Substrate 1 is Si substrate；AlN layers, the thickness of AlGaN layer and GaN layer be respectively 400 nm, 700 nm, 4 μm.
As shown in Fig. 2, metal layer electrode 4 is Ti/Ni/Au metal layer, Ti/Ni/Au metal layer is arranged from top to bottom
Ti metal layer, Ni metal layer and Au metal layer, Ti metal layer with a thickness of 30 nm, Ni metal layer with a thickness of 110 nm, Au gold
Belong to layer with a thickness of 110 nm.
The present embodiment additionally provides the method for preparing the multiple quantum wells blue light detector, comprising the following steps:
(1) MOCVD method grown buffer layer 2 on substrate 1 is used, then grows InGaN/GaN multiple quantum wells on the buffer layer 2
Layer 3；
(2) photoetching is carried out on GaN/InGaN multiple quantum well layer 3, in the 3 upper surface spin coating of GaN/InGaN multiple quantum well layer, is dried
Dry, exposure, development and oxonium ion processing determine electrode shape, and metal layer electrode 4 are vaporized on GaN/ by evaporation process
3 upper surface of InGaN multiple quantum well layer.
Using MOCVD method on substrate 1 successively epitaxial growth AlN layers, the temperature of AlGaN layer and GaN layer from top to bottom
Respectively 1200 DEG C, 1200 DEG C and 1150 DEG C.
MOCVD method is used to grow the temperature of GaN/InGaN multiple quantum well layer 3 on the buffer layer 2 for 750 DEG C.
Drying time is 50 s, and the time for exposure is 10 s, and developing time is 50 s, and oxonium ion handles the time as 3 min.
The evaporation rate of metal layer electrode 4 is 0.28 nm/min.
Multiple quantum wells blue light detector manufactured in the present embodiment is tested.
The correlated performance and embodiment 1 of multiple quantum wells blue light detector manufactured in the present embodiment are similar, correlation performance parameters
It can refer to the respective drawings of embodiment 1.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of multiple quantum wells blue light detector, which is characterized in that including successively arrange from top to bottom substrate, buffer layer,
GaN/InGaN multiple quantum well layer and metal layer electrode, buffer layer are AlN layer, AlGaN layer and the GaN successively to arrange from top to bottom
Layer, GaN/InGaN multiple quantum well layer are the successively GaN layer and InGaN layer of alternating growth on the buffer layer, the period of alternating growth
Be 6 ~ 8, GaN layer with a thickness of 12 ~ 15 nm, InGaN layer with a thickness of 3 ~ 5nm.
2. multiple quantum wells blue light detector according to claim 1, which is characterized in that substrate is Si substrate.
3. multiple quantum wells blue light detector according to claim 1, which is characterized in that AlN layers, AlGaN layer and GaN layer
Thickness is respectively 300 ~ 400 nm, 600 ~ 700 nm, 3 ~ 4 μm.
4. multiple quantum wells blue light detector according to claim 1, which is characterized in that the shape of metal layer electrode is interdigital
Electrode；Metal layer electrode is Ti/Ni/Au metal layer, and Ti/Ni/Au metal layer is the Ti metal layer arranged from top to bottom, Ni metal
Layer and Au metal layer, Ti metal layer with a thickness of 20 ~ 30nm, Ni metal layer with a thickness of 100 ~ 110nm, the thickness of Au metal layer
For 100 ~ 110nm.
5. the method for preparing any one of the Claims 1-4 multiple quantum wells blue light detector, which is characterized in that including following
Step:
(1) using MOCVD method grown buffer layer, then growth InGaN/GaN multiple quantum well layer on the buffer layer on substrate；
(2) photoetching is carried out on GaN/InGaN multiple quantum well layer, the upper surface spin coating of GaN/InGaN multiple quantum well layer, drying,
Exposure, development and oxonium ion processing, determine electrode shape, and metal layer electrode is vaporized on GaN/InGaN by evaporation process
Multiple quantum well layer upper surface.
6. the method for preparation multiple quantum wells blue light detector according to claim 5, which is characterized in that use the side MOCVD
Method on substrate from top to bottom successively epitaxial growth AlN layers, the temperature of AlGaN layer and GaN layer be respectively 1100 ~ 1200 DEG C,
1100 ~ 1200 DEG C and 1000 ~ 1150 DEG C.
7. the method for preparation multiple quantum wells blue light detector according to claim 5, which is characterized in that use the side MOCVD
The temperature that method grows GaN/InGaN multiple quantum well layer on the buffer layer is 600 ~ 750 DEG C.
8. the method for preparation multiple quantum wells blue light detector according to claim 5, which is characterized in that drying time 40
~ 50 s, time for exposure are 5 ~ 10 s, and developing time is 40 ~ 50 s, and oxonium ion handles the time as 2 ~ 3 min.
9. the method for preparation multiple quantum wells blue light detector according to claim 5, which is characterized in that metal layer electrode
Evaporation rate is 0.23 ~ 0.28 nm/min.
10. application of the multiple quantum wells blue light detector described in claim 1 in blue light detection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910703159.2A CN110459628A (en) | 2019-07-31 | 2019-07-31 | A kind of multiple quantum wells blue light detector and preparation method and application |
| PCT/CN2020/106452 WO2021018307A1 (en) | 2019-07-31 | 2020-07-31 | Multi-quantum well blue light detector, manufacturing method therefor and use thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021018307A1 (en) * | 2019-07-31 | 2021-02-04 | 华南理工大学 | Multi-quantum well blue light detector, manufacturing method therefor and use thereof |
| CN113224193A (en) * | 2021-04-12 | 2021-08-06 | 华南理工大学 | InGaN/GaN multi-quantum well blue light detector combining embedded electrode and passivation layer structure and preparation method and application thereof |
| CN113972294A (en) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof |
| CN116191203A (en) * | 2023-04-21 | 2023-05-30 | 深圳市星汉激光科技股份有限公司 | High-efficiency blue light semiconductor laser chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617358A (en) * | 2004-10-29 | 2005-05-18 | 南京大学 | Method for improving gallium nitride ligh guide type ultraviolet photoelectric detector responsiveness and detector |
| CN103022217A (en) * | 2012-11-22 | 2013-04-03 | 中山大学 | BeMgZnO-based MSM solar blind detector and preparation method thereof |
| CN104681677A (en) * | 2015-02-17 | 2015-06-03 | 吉林大学 | NiO-AlGaN ultraviolet light-emitting tube with microporous structure and preparation method thereof |
| CN106653896A (en) * | 2017-01-04 | 2017-05-10 | 广东省半导体产业技术研究院 | InGaN quantum dot photoelectric detector used for visible light communication and preparation method therefor |
| CN107482070A (en) * | 2017-07-17 | 2017-12-15 | 中山大学 | A kind of InGaN base MSM visible ray photodetectors of fluted body electrode structure |
| CN210607284U (en) * | 2019-07-31 | 2020-05-22 | 华南理工大学 | Multi-quantum well blue light detector |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105056984A (en) * | 2015-08-07 | 2015-11-18 | 北京大学 | Visible light responsive nitride photocatalytic material and preparation method |
| US10374127B2 (en) * | 2015-09-17 | 2019-08-06 | Nxp Usa, Inc. | Electronic devices with nanorings, and methods of manufacture thereof |
| CN105405915B (en) * | 2015-12-04 | 2017-03-22 | 华南理工大学 | InGaN-based blue light detector and preparation method therefor |
| CN110459628A (en) * | 2019-07-31 | 2019-11-15 | 华南理工大学 | A kind of multiple quantum wells blue light detector and preparation method and application |
-
2019
- 2019-07-31 CN CN201910703159.2A patent/CN110459628A/en active Pending
-
2020
- 2020-07-31 WO PCT/CN2020/106452 patent/WO2021018307A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617358A (en) * | 2004-10-29 | 2005-05-18 | 南京大学 | Method for improving gallium nitride ligh guide type ultraviolet photoelectric detector responsiveness and detector |
| CN103022217A (en) * | 2012-11-22 | 2013-04-03 | 中山大学 | BeMgZnO-based MSM solar blind detector and preparation method thereof |
| CN104681677A (en) * | 2015-02-17 | 2015-06-03 | 吉林大学 | NiO-AlGaN ultraviolet light-emitting tube with microporous structure and preparation method thereof |
| CN106653896A (en) * | 2017-01-04 | 2017-05-10 | 广东省半导体产业技术研究院 | InGaN quantum dot photoelectric detector used for visible light communication and preparation method therefor |
| CN107482070A (en) * | 2017-07-17 | 2017-12-15 | 中山大学 | A kind of InGaN base MSM visible ray photodetectors of fluted body electrode structure |
| CN210607284U (en) * | 2019-07-31 | 2020-05-22 | 华南理工大学 | Multi-quantum well blue light detector |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021018307A1 (en) * | 2019-07-31 | 2021-02-04 | 华南理工大学 | Multi-quantum well blue light detector, manufacturing method therefor and use thereof |
| CN113224193A (en) * | 2021-04-12 | 2021-08-06 | 华南理工大学 | InGaN/GaN multi-quantum well blue light detector combining embedded electrode and passivation layer structure and preparation method and application thereof |
| WO2022218141A1 (en) * | 2021-04-12 | 2022-10-20 | 华南理工大学 | Ingan/gan multi-quantum well blue-light detector combining embedded electrode structure and passivation layer structure, and preparation method therefor and application thereof |
| CN113972294A (en) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof |
| CN116191203A (en) * | 2023-04-21 | 2023-05-30 | 深圳市星汉激光科技股份有限公司 | High-efficiency blue light semiconductor laser chip |
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