CN114744061B - Blue light detector and preparation method and application thereof - Google Patents

Blue light detector and preparation method and application thereof Download PDF

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CN114744061B
CN114744061B CN202210316539.2A CN202210316539A CN114744061B CN 114744061 B CN114744061 B CN 114744061B CN 202210316539 A CN202210316539 A CN 202210316539A CN 114744061 B CN114744061 B CN 114744061B
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film layer
ingan
gas
blue light
electrode
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CN114744061A (en
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李国强
吴青
王文樑
郑昱林
唐鑫
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract

The invention discloses a blue light detector and a preparation method and application thereof, wherein the blue light detector comprises a GaS film layer, an InGaN film layer and a substrate which are sequentially laminated, wherein the GaS film layer is partially covered on the InGaN film layer; a first electrode is arranged on the area, which is not covered by the GaS film layer, of the InGaN film layer; and a second electrode is arranged on the GaS film layer. The GaS film layer is p-type, the InGaN film layer is n-type, and a PN junction is formed between the GaS film layer and the InGaN film layer. In the blue light detector, the surface of the GaS film layer is free of dangling bonds, and a good contact interface is formed between the InGaN film layer and the GaS film layer, so that dark current can be reduced, the specific detection rate of the device is improved, and the response speed is improved.

Description

Blue light detector and preparation method and application thereof
Technical Field
the invention belongs to the field of electronic products, and particularly relates to a blue light detector, a preparation method and application thereof.
Background
The visible light communication is a wireless light communication technology based on a white light LED technology, and the white light LED is used for transmitting information by emitting light signals which are difficult to distinguish by naked eyes and change in brightness at high speed, so that the short-distance high-speed communication is realized while the LED is used for illumination, and the wireless light communication technology is particularly suitable for indoor communication. Therefore, it is of great importance to study detectors with high-speed reception capability. The current Si-based avalanche diode detector can basically meet the technical requirements in the field of visible light communication by virtue of the advantages of early development, mature preparation process and capability of detecting electromagnetic waves in a wider wave band. However, the narrow-band Si-based avalanche diode has the disadvantages of long response time, large noise and weak absorption, which limits the improvement of performance of the detector for visible light communication in terms of sensitivity, response speed and the like. Conventional photodetectors have been difficult to meet the need for technological improvements.
Disclosure of Invention
in order to overcome the above-mentioned problems of the prior art, it is an object of the present invention to provide a blue light detector.
The second objective of the present invention is to provide a method for manufacturing a blue light detector.
It is a further object of the present invention to provide an application of a blue light detector in optical communication.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
The first aspect of the present invention provides a blue light detector, comprising a GaS film layer, an InGaN film layer and a substrate, which are sequentially stacked, wherein the GaS film layer is partially covered on the InGaN film layer; a first electrode is arranged on the area, which is not covered by the GaS film layer, of the InGaN film layer; and a second electrode is arranged on the GaS film layer.
Preferably, the GaS film layer covers a region of half area of the InGaN film layer, and the first electrode is arranged on the region of the other half area of the InGaN film layer.
Preferably, the GaS thin film layer is p-type, the InGaN thin film layer is n-type, and a PN junction is formed between the GaS thin film layer and the InGaN thin film layer.
Preferably, a type II energy band structure is formed between the PN junctions.
Preferably, at least one of Si and Zn is doped in the InGaN thin film layer; further preferably, the InGaN thin film layer is doped with Si.
In the invention, the intra-layer atoms of the GaS film layer are combined by covalent bonds, and the GaS film layer and the InGaN film layer are combined by Van der Waals force, so that the surface of the GaS film layer has no dangling bond, and a good contact interface is formed between the GaS film layer and the InGaN film layer.
Preferably, the thickness of the InGaN film layer is 1-20 mu m; further preferably, the thickness of the InGaN thin film layer is 4-16 μm; still further preferably, the thickness of the InGaN thin film layer is 4 to 10 μm.
Preferably, the thickness of the GaS film layer is 100 nm-20 mu m; further preferably, the thickness of the GaS film layer is 1 μm to 20 μm; still more preferably, the thickness of the GaS film layer is 6 μm to 10. Mu.m.
Preferably, the material of the first electrode is at least one of Ti, cr, al, au; further preferably, the first electrode is one of Ti/Au, cr/Au, and Al/Au.
Preferably, the thickness of the first electrode is 100-300 nm; further preferably, the thickness of the first electrode is 200nm.
preferably, ohmic contact is formed between the first electrode and the InGaN thin film layer.
Preferably, the material of the second electrode is at least one of Ni, au and Pt; further preferably, the second electrode is a Ni/Au composite electrode.
preferably, the thickness of the second electrode is 100-300 nm; further preferably, the thickness of the second electrode is 200nm.
preferably, ohmic contact is formed between the second electrode and the GaS film layer.
Preferably, the substrate is sapphire, si, liGaO3at least one of them.
A second aspect of the present invention provides a method for preparing a blue light detector according to the first aspect of the present invention, comprising the steps of:
s1: forming an InGaN thin film layer on a substrate by a metal organic chemical vapor deposition method;
S2: by chemical vapor deposition, ga2S3Vapor is subjected to hydrogen reduction and then is subjected to deposition reaction in a partial area on the InGaN film layer to form a GaS film layer;
S3: forming a first electrode on a region of the InGaN thin film layer not covered with the GaS thin film layer, and forming a second electrode on the GaS thin film layer; the blue light detector is manufactured.
Preferably, the step S1 specifically includes: preparing an Si doped InGaN thin film layer on a substrate by using trimethyl gallium as a gallium source, trimethyl indium as an indium source, ammonia as a nitrogen source, silane as a silicon source and hydrogen as a carrier gas through a metal organic chemical vapor deposition method;
preferably, the flow rate of the trimethylgallium is 30-150sccm; further preferably, the flow rate of the trimethylgallium is 50-150sccm; still further preferably, the flow rate of trimethylgallium is 50-100sccm.
preferably, the flow rate of the trimethyl indium is 50-200sccm; further preferably, the flow rate of the trimethyl indium is 50-150sccm; still further preferably, the flow rate of the trimethylindium is 50-100sccm.
preferably, the ammonia flow is 100-300sccm; further preferably, the ammonia gas flow is 100-250sccm; still further preferably, the ammonia gas flow rate is 100-150sccm.
Preferably, the concentration of the silane after being diluted by hydrogen is 1 percent, and the flow rate of the silane is 1-5 sccm.
Preferably, the hydrogen flow is 200-400 sccm; further preferably, the hydrogen flow rate is 200-350 sccm; still more preferably, the hydrogen flow rate is 200 to 300sccm.
Preferably, the growth temperature is 820-1050 ℃; further preferably, the growth temperature is 850-1000 ℃; still further preferably, the growth temperature is 900-1000 ℃.
Preferably, the growth time is 1-3 hours; further preferably, the growth time is 1 to 2.5 hours; still further preferably, the growth time is 1.5 to 2.5 hours.
preferably, the growth air pressure is 7000-30000 Pa; further preferably, the growth air pressure is 10000 to 30000Pa; still more preferably, the growth gas pressure is 15000 to 25000Pa.
Preferably, in the step S2, ga2S3The vapor is Ga2S3The powder is obtained by heating and sublimating.
Preferably, the Ga2S3the dosage of the powder is 0.01-0.3 g; further preferably, the Ga2S3The dosage of the powder is 0.1-0.3 g; still further preferably, the Ga2S3The powder is used in an amount of 0.15 to 0.25g.
preferably, in the step S2, the temperature of the deposition reaction is 900 to 960 ℃; further preferably, in the step S2, the temperature of the deposition reaction is 920 to 960 ℃; still further preferably, in the step S2, the temperature of the deposition reaction is 920 to 940 ℃.
Preferably, in the step S2, the deposition reaction pressure is 1000 to 5000Pa; further preferably, in the step S2, the deposition reaction pressure is 2000 to 5000Pa; still further preferably, in the step S2, the deposition reaction pressure is 2000 to 4000Pa.
preferably, in the step S2, the carrier gas is Ar.
Preferably, the flow rate of Ar is 12-40sccm; further preferably, the flow rate of Ar is 12-30sccm; still more preferably, the flow rate of Ar is 15-30sccm.
Preferably, the flow rate of the hydrogen is 15-30sccm; further preferably, the flow rate of the hydrogen is 20-30sccm; still further preferably, the flow rate of the hydrogen gas is 20-25sccm.
preferably, in the step S2, the deposition reaction time is 20-45 min; further preferably, in the step S2, the deposition reaction time is 25 to 40 minutes; still further preferably, in the step S2, the deposition reaction time is 30 to 35 minutes.
Preferably, the step S2 is performed in a heating furnace, and the substrate with the InGaN thin film layer formed in the step S1 is placed in the heating furnace near the inner wall of the heating furnace at a distance of 3.5-5.5 cm from the inner wall of the heating furnace.
preferably, the central position of the heating furnace is provided with a heating area, and the temperature of the central position of the heating furnace is higher than that of the edge position of the heating furnace.
Preferably, the step S2 uses a single-temperature zone heating furnace, that is, the heating furnace has only one heating zone, so that the equipment cost is lower.
preferably, in the step S3, the first electrode is manufactured by at least one of magnetron sputtering, thermal evaporation, spin coating, and pressing.
preferably, in the step S3, the second electrode is manufactured by at least one of magnetron sputtering, thermal evaporation, spin coating, and pressing.
A third aspect of the present invention provides a blue light detector according to the first aspect of the present invention for use in optical communications.
Preferably, the optical communication is a visible light communication.
the beneficial effects of the invention are as follows: in the blue light detector, the surface of the GaS film layer is free of dangling bonds, and a good contact interface is formed between the InGaN film layer and the GaS film layer, so that dark current can be reduced, the specific detection rate of the device is improved, and the response speed is improved.
In addition, the InGaN thin film layer and the GaS thin film layer are provided with a matched II-type energy band structure, and a built-in electric field generated by a potential difference between n-InGaN and p-GaS can enable photo-generated carriers to be rapidly separated, so that the response speed of the device is further improved, and meanwhile, the built-in electric field endows the device with a self-power function, so that a blue light detector can detect blue light under the condition of zero power consumption.
Drawings
Fig. 1 is a schematic structural diagram of a blue light detector in embodiment 1.
FIG. 2 is an I-V plot of the blue light detector of example 1 at various illumination power densities at a wavelength of 470 nm.
FIG. 3 is a graph of the stability of the light response of the blue light detector of example 1 under 470nm illumination at a bias of 0V.
FIG. 4 is a graph of I-T for the blue light detector of example 1 at 0V bias under 470nm illumination.
Detailed Description
Specific embodiments of the present invention will be described in further detail below with reference to the drawings and examples, but the practice and protection of the present invention are not limited thereto. It should be noted that the following processes, unless otherwise specified, are all realized or understood by those skilled in the art with reference to the prior art. The reagents or apparatus used were not manufacturer-specific and were considered conventional products commercially available.
Example 1
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the n-InGaN thin film layer is disposed on the substrate, and the p-GaS thin film layer and the first electrode are disposed on the n-InGaN thin film layer; the p-GaS film layer covers a partial region of the n-InGaN film layer, and a second electrode is arranged on the p-GaS film layer. The thickness of the p-GaS film layer is 9 mu m, and the substrate is a sapphire substrate; the n-InGaN thin film layer is a Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 5 mu m. The 100nmTi/100nmAu composite electrode is a first electrode, and the 100nmNi/100nmAu composite electrode is a second electrode.
The blue light detector in the example is prepared by adopting the following preparation method, and specifically comprises the following steps:
(1) 2 inch (0001) plane sapphire was cut into 20X 20mm2Respectively ultrasonically cleaning the square of the substrate for 10min by using acetone, absolute ethyl alcohol and deionized water, and finally drying by using a nitrogen gun to obtain the clean substrate.
(2) Placing the pretreated (0001) plane sapphire substrate into a reaction cavity of Metal Organic Chemical Vapor Deposition (MOCVD) reaction equipment, then introducing 40sccm trimethylgallium, 70sccm trimethylindium, 120sccm ammonia, 2sccm silane and 200sccm hydrogen in a hydrogen atmosphere, and growing for 1h at a growth temperature of 900 ℃ and a growth pressure of 10000Pa to prepare a Si-doped InGaN thin film layer with a thickness of 5 mu m, namely an n-InGaN thin film layer. SiH (SiH)4The gas is used as an n-type dopant to make the InGaN thin film layer n-type.
(3) The n-InGaN thin film layer prepared by the method is taken as a substrate, is placed at a position 4cm away from the downstream boundary of a single-temperature zone heating furnace, and is 10 multiplied by 20mm2The rectangular Si sheet of the (2) shields half of the n-InGaN film layer along the direction of the air flow, and the PN junction with the p-GaS film layer/n-InGaN film layer deposited on the surface is prepared, wherein the specific parameters are as follows: 0.1g of Ga as reaction precursor2S3Powder, growth temperature of 925 ℃, growth pressure of 2000Pa, carrier gas of 15sccm Ar, and reaction gas of 20sccm H2the reaction time was 30min, and a p-GaS film layer having a thickness of about 9 μm was prepared.
(4) And (3) uniformly coating negative photoresist on the PN junction of the p-GaS film layer/n-InGaN film layer, drying and curing, exposing under the patterned mask, heating and curing, and exposing under the removed mask. Then, 100nmTi/100nmAu is evaporated on the sample subjected to the photoetching treatment by utilizing an evaporation method, and then the photoresist is stripped by ultrasonic, so that a patterned first electrode is obtained on the evaporated n-InGaN film layer part. And coating negative photoresist on the sample evaporated with the first electrode, drying and curing, exposing under the patterned mask, heating and curing, and exposing under the removed mask. And then evaporating 100nmNi/100nmAu on the sample subjected to the photoetching treatment by utilizing an evaporation method, and then stripping photoresist by utilizing ultrasonic to obtain a patterned second electrode on the part of the sample p-GaS film layer on which the first electrode is evaporated. In the embodiment of the application, the Ti/Au composite electrode is a first electrode, the Ti layer is contacted with the n-InGaN thin film layer, and the Au is coated outside the Ti layer to avoid oxidation of the Ti layer; the Ni/Au composite electrode is a second electrode. The photoetching process adopts a negative photoresist process, negative photoresist (namely photoresist) is photosensitive and solidified, the non-photosensitive part is dissolved in a developing solution, a sample after development is evaporated, an upper electrode layer is evaporated, and the photoresist is stripped, so that a patterned first electrode and a patterned second electrode are obtained.
The blue light detector of this example has an I-V curve of 470nm blue light response at different light power densities as shown in FIG. 2, and it is clear from FIG. 2 that at 5V bias, the photocurrent increases with increasing light intensity, the rectification ratio is about 5, and the light irradiation power density is 1578mW/cm2Under bias conditions of 470nm and 5V wavelength, according to the formula r=iph/(PS)，IphThe light current is obtained by subtracting dark current in the dark from the total current under illumination; p is illumination power density, S is illumination effective area, R is responsivity, and R=0.129A/W can be calculated, so that the invention has higher response speed. FIG. 3 is a graph showing the stability of the light response of the blue light detector of this example under 470nm light at 0V bias, FIG. 3 shows the detector pair light intensity at 0V bias at 1165mW/cm2Blue light with a wavelength of 470nm has stable, repeatable light response characteristics. FIG. 4 is a graph of I-T for the blue detector of this example at 0V bias with 470nm illumination, for the blue detector pair of this example 1165mW/cm at 0V bias2the response speed of blue light with a wavelength of 470nm results in: the rise time is 630 mu s and the decay time is 1000 mu s, which shows that the light response speed of the blue light detector is faster. As can be seen from fig. 3 and fig. 4, the blue light detector of the present invention still has a high light response speed and stable and repeatable light response characteristics at a bias of 0V, further indicating that the blue light detector of the present invention has self-powered characteristics.
In FIG. 2, in the dark, VdsCorresponding I when=5vdsi.e. dark current, dark current Idark0.05mA, where IdarkIs dark current, VdsIs the drain-source voltage.
the calculation formula of the specific detection rate is as follows: d (D)*＝A1/2R/(2eIdark)1/2，D*is the specific detection rate, A is the effective illumination area, R is the responsivity, e is the charge quantity of the element, Idarkis the dark current, calculated according to FIG. 2, in the dark, VdsWhen=5v, the calculated D*＝1.1*1010jones, jones is the unit of specific detection rate.
From this, the blue light detector in example 1 has a lower dark current and a higher specific detection rate.
Example 2
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the n-InGaN thin film layer is disposed on the substrate, and the p-GaS thin film layer and the first electrode are disposed on the n-InGaN thin film layer; the p-GaS film layer covers a partial region of the n-InGaN film layer, and a second electrode is arranged on the p-GaS film layer. The thickness of the p-GaS film layer is 4 mu m, and the substrate is an n-Si sheet; the n-InGaN thin film layer is a Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 7 mu m. The 100nmCr/100nmAU composite electrode is a first electrode, and 200nmAU is a second electrode.
The blue light detector in the example is prepared by adopting the following preparation method, and specifically comprises the following steps:
(1) Cutting 2 inch (111) face n-Si sheet into 20X 20mm2Respectively ultrasonically cleaning the square of the substrate for 10min by using acetone, absolute ethyl alcohol and deionized water, and finally drying by using a nitrogen gun to obtain the clean substrate.
(2) The pretreated (111) plane n-Si sheet substrate is placed in a reaction cavity of a Metal Organic Chemical Vapor Deposition (MOCVD) reaction device, then 60sccm of trimethylgallium, 120sccm of trimethylindium, 170sccm of ammonia, 3sccm of silane and 300sccm of hydrogen are introduced into the reaction cavity in a hydrogen atmosphere, and the substrate is grown for 2 hours at a growth temperature of 950 ℃ and a growth pressure of 30000Pa, so that a Si-doped InGaN film with a thickness of 7 μm, namely an n-InGaN film layer, is prepared.
(3) The n-InGaN thin film layer prepared above was used as a substrate, placed 4.5cm away from the downstream boundary of a single temperature zone furnace, and used 10X 20mm2The rectangular Si sheet of the (2) shields half of the InGaN film layer along the direction of the air flow, and the PN junction of the p-GaS film layer/n-InGaN film layer is prepared and obtained, and specific parameters are as follows: 0.15g of Ga of the reaction precursor2S3powder, reaction temperature of 940 ℃, growth pressure of 5000Pa, carrier gas of 12sccm Ar, and reaction gas of 15sccm H2the reaction time was 20min, and a p-GaS film layer having a thickness of about 4 μm was prepared.
(4) And directly covering the p-GaS film layer part by using a patterned hard mask plate through the PN junction of the prepared p-GaS film layer/n-InGaN film layer, and evaporating 100nmCr/100nmAU patterned on the n-InGaN film layer to prepare the first electrode. And similarly, masking the n-InGaN film layer by using a patterned hard mask, and evaporating the patterned 200nmAu on the GaS film to prepare the second electrode.
Example 3
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the n-InGaN thin film layer is disposed on the substrate, and the p-GaS thin film layer and the first electrode are disposed on the n-InGaN thin film layer; the p-GaS film layer covers a partial region of the n-InGaN film layer, and a second electrode is arranged on the p-GaS film layer. The thickness of the p-GaS film layer is 16 μm, and the substrate is LiGaO3A substrate; the n-InGaN thin film layer is a Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 6 mu m. The 100nmAl/100nmAu composite electrode is the first electrode, and 200nmPt is the second electrode.
The blue light detector in the example is prepared by adopting the following preparation method, and specifically comprises the following steps:
(1) LiGaO to be purchased3Cutting the bulk crystal into pieces of 20X 20mm2Respectively ultrasonically cleaning the square of the substrate for 10min by using acetone, absolute ethyl alcohol and deionized water, and finally drying by using a nitrogen gun to obtain the clean substrate.
(2) To be pretreated LiGaO3The substrate is placed in a reaction cavity of a Metal Organic Chemical Vapor Deposition (MOCVD) reaction device, then 120sccm of trimethyl gallium, 150sccm of trimethyl indium, 240sccm of ammonia, 4sccm of silane and 400sccm of hydrogen are introduced into the reaction cavity in a hydrogen atmosphere, and the substrate is grown for 3 hours at a growth temperature of 1000 ℃ and a growth pressure of 20000Pa, so that a Si-doped InGaN film with a thickness of 6 μm, namely an n-InGaN film layer, is prepared.
(3) The n-InGaN thin film layer prepared above is used as a substrate, and is placed at a position 5cm away from the downstream boundary of a single temperature zone furnace, and 10×20mm is used2The rectangular Si sheet of the (2) shields half of the InGaN film along the direction of the air flow, and the PN junction of the p-GaS film layer/the n-InGaN film layer is prepared by the following specific parameters: 0.2g of Ga as reaction precursor2S3Powder, growth temperature of 900 ℃, growth pressure of 5000Pa, carrier gas of 20sccm Ar, and reaction gas of 40sccm H2the reaction time was 40min, and a p-GaS film layer having a thickness of about 16 μm was prepared.
(4) And directly covering the p-GaS film layer part by using a patterned hard mask plate through the PN junction of the prepared p-GaS film layer/n-InGaN film layer, and evaporating 100nmAl/100nmAu patterned on the n-InGaN film layer to prepare the first electrode. And similarly, masking the n-InGaN film layer by using a patterned hard mask plate, evaporating the patterned 200nmPt on the p-GaS film layer, and preparing the second electrode.
Examples 2 to 3 obtained substantially the same experimental results as in example 1, and all had a faster response speed, a lower dark current and a higher specific detection rate.
while the embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes may be made without departing from the spirit of the present invention within the knowledge of those skilled in the art. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.

Claims (8)

1. A blue light detector, characterized by: the method comprises the steps of sequentially laminating a GaS film layer, an InGaN film layer and a substrate, wherein the GaS film layer is partially covered on the InGaN film layer; a first electrode is arranged on the area, which is not covered by the GaS film layer, of the InGaN film layer; the GaS film layer is provided with a second electrode; the GaS film layer is p-type, the InGaN film layer is n-type, and a PN junction is formed between the GaS film layer and the InGaN film layer; and a II-type energy band structure is formed between the PN junctions.
2. the blue light detector according to claim 1, wherein: at least one of Si and Zn is doped in the InGaN film layer.
3. The blue light detector according to claim 1, wherein: the thickness of the InGaN film layer is 1-20 mu m.
4. The blue light detector according to claim 1, wherein: the thickness of the GaS film layer is 100 nm-20 mu m.
5. The blue light detector according to claim 1, wherein: the material of the first electrode is at least one of Ti, cr and Al; and the material of the second electrode is at least one of Ni, au and Pt.
6. The blue light detector according to claim 1, wherein: the substrate is sapphire, si, liGaO3at least one of them.
7. The method for manufacturing the blue light detector according to any one of claims 1 to 6, characterized by comprising the steps of: the method comprises the following steps:
s1: forming an InGaN thin film layer on a substrate by a metal organic chemical vapor deposition method;
S2: by chemical vapor deposition, ga2S3Vapor is subjected to hydrogen reduction and then is subjected to deposition reaction in a partial area on the InGaN film layer to form a GaS film layer;
S3: forming a first electrode on a region of the InGaN thin film layer not covered with the GaS thin film layer, and forming a second electrode on the GaS thin film layer; the blue light detector is manufactured.
8. Use of the blue light detector of any one of claims 1-6 in optical communications.
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Citations (3)

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Publication number Priority date Publication date Assignee Title
CN105405915A (en) * 2015-12-04 2016-03-16 华南理工大学 InGaN-based blue light detector and preparation method therefor
CN112201711A (en) * 2020-09-10 2021-01-08 湖北大学 ZnO-based homojunction self-driven ultraviolet photoelectric detector and preparation method thereof
CN113972294A (en) * 2021-09-26 2022-01-25 华南理工大学 Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof

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CN105405915A (en) * 2015-12-04 2016-03-16 华南理工大学 InGaN-based blue light detector and preparation method therefor
CN112201711A (en) * 2020-09-10 2021-01-08 湖北大学 ZnO-based homojunction self-driven ultraviolet photoelectric detector and preparation method thereof
CN113972294A (en) * 2021-09-26 2022-01-25 华南理工大学 Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof

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