CN114744061A - Blue light detector and preparation method and application thereof - Google Patents
Blue light detector and preparation method and application thereof Download PDFInfo
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- CN114744061A CN114744061A CN202210316539.2A CN202210316539A CN114744061A CN 114744061 A CN114744061 A CN 114744061A CN 202210316539 A CN202210316539 A CN 202210316539A CN 114744061 A CN114744061 A CN 114744061A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0264—Inorganic materials
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract
The invention discloses a blue light detector and a preparation method and application thereof, wherein the blue light detector comprises a GaS thin film layer, an InGaN thin film layer and a substrate which are sequentially stacked, wherein the InGaN thin film layer is partially covered on the GaS thin film layer; a first electrode is arranged in the area, not covered by the GaS thin film layer, of the InGaN thin film layer; and a second electrode is arranged on the GaS thin film layer. The GaS thin film layer is of a p type, the InGaN thin film layer is of an n type, and a PN junction is formed between the GaS thin film layer and the InGaN thin film layer. In the blue light detector, the surface of the GaS thin film layer has no dangling bond, and the InGaN thin film layer and the GaS thin film layer have good contact interfaces, so that dark current can be reduced, the specific detection rate of a device is improved, and meanwhile, the response speed is improved.
Description
Technical Field
The invention belongs to the field of electronic products, and particularly relates to a blue light detector, and a preparation method and application thereof.
Background
The visible light communication is a wireless light communication technology based on a white light LED technology, information is transmitted by emitting a light signal which is difficult to distinguish by naked eyes and changes in brightness and darkness at a high speed through the white light LED, short-distance high-speed communication is realized while LED illumination is carried out, and the wireless light communication technology is particularly suitable for indoor communication. Therefore, it is of great significance to research a probe having a high-speed receiving capability. At present, the Si-based avalanche diode detector can basically meet the technical requirements in the field of visible light communication due to the advantages of early development, mature preparation process and capability of detecting electromagnetic waves in a wider waveband. However, the narrow-band Si-based avalanche diode has the disadvantages of long response time, high noise and weak absorption, which limits the improvement of the performance of the detector for visible light communication in terms of sensitivity, response speed and the like. The conventional photodetector has been difficult to satisfy the demand for technical improvement.
Disclosure of Invention
In order to overcome the problems of the prior art, an object of the present invention is to provide a blue light detector.
The invention also aims to provide a preparation method of the blue light detector.
The invention also aims to provide an application of the blue light detector in optical communication.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the invention provides a blue light detector, which comprises a GaS thin film layer, an InGaN thin film layer and a substrate which are sequentially stacked, wherein the InGaN thin film layer is partially covered on the GaS thin film layer; a first electrode is arranged in the area, not covered by the GaS thin film layer, of the InGaN thin film layer; and a second electrode is arranged on the GaS thin film layer.
Preferably, the GaS thin film layer covers a region of half area of the InGaN thin film layer, and the first electrode is disposed on the region of the other half area of the InGaN thin film layer.
Preferably, the GaS thin film layer is p-type, the InGaN thin film layer is n-type, and a PN junction is formed between the GaS thin film layer and the InGaN thin film layer.
Preferably, a type II band structure is formed between the PN junctions.
Preferably, the InGaN thin film layer is doped with at least one of Si and Zn; further preferably, the InGaN thin film layer is doped with Si.
In addition, a II-type energy band structure is formed between the GaS thin film layer and the InGaN thin film layer, and under the action of an internal electric field, the carriers of dark current are promoted to be rapidly separated, so that the blue light detector has lower dark current and higher specific detectivity.
Preferably, the thickness of the InGaN thin film layer is 1-20 μm; further preferably, the thickness of the InGaN thin film layer is 4-16 μm; still further preferably, the thickness of the InGaN thin film layer is 4-10 μm.
Preferably, the thickness of the GaS thin film layer is 100 nm-20 μm; further preferably, the thickness of the GaS thin film layer is 1-20 μm; still more preferably, the thickness of the GaS thin film layer is 6 to 10 μm.
Preferably, the material of the first electrode is at least one of Ti, Cr, Al and Au; further preferably, the first electrode is one of Ti/Au, Cr/Au, and Al/Au.
Preferably, the thickness of the first electrode is 100-300 nm; further preferably, the thickness of the first electrode is 200 nm.
Preferably, ohmic contact is formed between the first electrode and the InGaN thin film layer.
Preferably, the material of the second electrode is at least one of Ni, Au and Pt; further preferably, the second electrode is a Ni/Au complex electrode.
Preferably, the thickness of the second electrode is 100-300 nm; further preferably, the thickness of the second electrode is 200 nm.
Preferably, ohmic contact is formed between the second electrode and the GaS thin film layer.
Preferably, the substrate is sapphire, Si, LiGaO3At least one of (1).
The second aspect of the present invention provides a method for preparing the blue light detector provided by the first aspect of the present invention, comprising the following steps:
s1: forming an InGaN thin film layer on a substrate by a metal organic chemical vapor deposition method;
s2: by chemical vapour deposition of Ga2S3Reducing the vapor by hydrogen, and performing partial deposition reaction on the InGaN thin film layer to form a GaS thin film layer;
s3: forming a first electrode on the InGaN thin film layer in a region not covered by the GaS thin film layer, and forming a second electrode on the GaS thin film layer; and manufacturing the blue light detector.
Preferably, the step S1 is specifically: preparing a Si-doped InGaN thin film layer on a substrate by a metal organic chemical vapor deposition method by taking trimethyl gallium as a gallium source, trimethyl indium as an indium source, ammonia gas as a nitrogen source, silane as a silicon source and hydrogen as a carrier gas;
preferably, the flow rate of the trimethyl gallium is 30-150 sccm; further preferably, the flow rate of the trimethyl gallium is 50-150 sccm; still further preferably, the flow rate of trimethyl gallium is 50-100 sccm.
Preferably, the flow rate of the trimethyl indium is 50-200 sccm; further preferably, the flow rate of the trimethyl indium is 50-150 sccm; still further preferably, the flow rate of the trimethylindium is 50 to 100 sccm.
Preferably, the flow rate of the ammonia gas is 100-; further preferably, the ammonia gas flow rate is 100-250 sccm; still more preferably, the flow rate of the ammonia gas is 100-150 sccm.
Preferably, the concentration of the silane diluted by hydrogen is 1%, and the silane flow is 1-5 sccm.
Preferably, the hydrogen flow is 200-400 sccm; further preferably, the hydrogen flow is 200-350 sccm; still more preferably, the hydrogen flow rate is 200 to 300 sccm.
Preferably, the growth temperature is 820-1050 ℃; further preferably, the growth temperature is 850-1000 ℃; still further preferably, the growth temperature is 900-.
Preferably, the growth time is 1-3 h; further preferably, the growth time is 1-2.5 h; still further preferably, the growth time is 1.5-2.5 h.
Preferably, the growth air pressure is 7000-30000 Pa; further preferably, the growth air pressure is 10000-30000 Pa; still further preferably, the growth gas pressure is 15000 to 25000 Pa.
Preferably, in the step S2, Ga2S3The vapor is composed of Ga2S3Heating the powder to sublimate to obtain the product.
Preferably, the Ga is2S3The using amount of the powder is 0.01-0.3 g; further preferably, the Ga is2S3The using amount of the powder is 0.1-0.3 g; still further preferably, the Ga is2S3The amount of the powder is 0.15-0.25 g.
Preferably, in the step S2, the temperature of the deposition reaction is 900-960 ℃; further preferably, in the step S2, the temperature of the deposition reaction is 920-960 ℃; still further preferably, in the step S2, the temperature of the deposition reaction is 920-940 ℃.
Preferably, in the step S2, the deposition reaction pressure is 1000-5000 Pa; further preferably, in the step S2, the deposition reaction pressure is 2000 to 5000 Pa; still more preferably, in the step S2, the deposition reaction pressure is 2000 to 4000 Pa.
Preferably, in step S2, the carrier gas is Ar.
Preferably, the flow rate of Ar is 12-40 sccm; further preferably, the flow rate of Ar is 12-30 sccm; still further preferably, the flow rate of Ar is 15 to 30 sccm.
Preferably, the flow rate of the hydrogen gas is 15-30 sccm; further preferably, the flow rate of the hydrogen gas is 20-30 sccm; still further preferably, the flow rate of the hydrogen gas is 20 to 25 sccm.
Preferably, in the step S2, the deposition reaction time is 20-45 min; further preferably, in the step S2, the deposition reaction time is 25-40 min; still more preferably, in the step S2, the deposition reaction time is 30-35 min.
Preferably, the step S2 is performed in a heating furnace, and the substrate with the InGaN thin film layer formed in the step S1 is placed in the heating furnace near the inner wall of the heating furnace and at a distance of 3.5 to 5.5cm from the inner wall of the heating furnace.
Preferably, the central position of the heating furnace is provided with a heating area, and the temperature of the central position of the heating furnace is higher than that of the edge position of the heating furnace.
Preferably, the step S2 uses a single-temperature zone heating furnace, i.e. the heating furnace has only one heating zone, so that the equipment cost is lower.
Preferably, in step S3, the first electrode is formed by at least one of magnetron sputtering, thermal evaporation, spin coating, and pressing.
Preferably, in step S3, the second electrode is formed by at least one of magnetron sputtering, thermal evaporation, spin coating, and pressing.
A third aspect of the present invention provides the use of the blue light detector provided in the first aspect of the present invention in optical communications.
Preferably, the optical communication is visible light communication.
The invention has the beneficial effects that: in the blue light detector, the surface of the GaS thin film layer has no dangling bond, and the InGaN thin film layer and the GaS thin film layer have good contact interfaces, so that dark current can be reduced, the specific detection rate of a device is improved, and meanwhile, the response speed is improved.
In addition, the InGaN thin film layer and the GaS thin film layer in the invention have matched II-type energy band structures, and a built-in electric field generated by the potential difference between n-InGaN and p-GaS enables photogenerated carriers to be rapidly separated so as to further improve the response speed of the device, and meanwhile, the built-in electric field endows the device with a self-powered function, so that the blue light detector in the invention can detect blue light under the condition of zero power consumption.
Drawings
Fig. 1 is a schematic structural view of a blue light detector in embodiment 1.
FIG. 2 is a graph of I-V curves of the blue light detector of example 1 at a wavelength of 470nm for different illumination power densities.
FIG. 3 is a graph of the stability of the photoresponse of the blue-light detector of example 1 under 0V bias at 470nm illumination.
FIG. 4 is a graph of I-T curves at 470nm illumination at 0V bias for the blue detector of example 1.
Detailed Description
Specific embodiments of the present invention are described in further detail below with reference to the figures and examples, but the practice and protection of the present invention is not limited thereto. It is noted that the following processes, if not described in particular detail, are all realizable or understandable by those skilled in the art with reference to the prior art. The reagents or apparatus used are not indicated to the manufacturer, and are considered to be conventional products available by commercial purchase.
Example 1
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the substrate is provided with the n-InGaN thin film layer, and the n-InGaN thin film layer is provided with the p-GaS thin film layer and the first electrode; the p-GaS thin film layer is arranged on one side of the n-InGaN thin film layer, the first electrode is arranged on the other side of the n-InGaN thin film layer, and the second electrode is arranged on the p-GaS thin film layer. The thickness of the p-GaS thin film layer is 9 mu m, and the substrate is a sapphire substrate; the n-InGaN thin film layer is an Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 5 micrometers. The 100nmTi/100nmAu composite electrode is a first electrode, and the 100nmNi/100nmAu composite electrode is a second electrode.
The blue light detector in the embodiment is prepared by the following preparation method, and specifically comprises the following steps:
(1) cutting 2 inch (0001) face sapphire into 20X 20mm2The square is then respectively cleaned by acetone, absolute ethyl alcohol and deionized water for 10min by ultrasonic cleaning,and finally, drying by using a nitrogen gun to obtain a clean substrate.
(2) And putting the pretreated (0001) surface sapphire substrate into a reaction cavity of Metal Organic Chemical Vapor Deposition (MOCVD) reaction equipment, then introducing 40sccm of trimethyl gallium, 70sccm of trimethyl indium, 120sccm of ammonia gas, 2sccm of silane and 200sccm of hydrogen gas into the reaction cavity in a hydrogen atmosphere, and growing for 1h at the growth temperature of 900 ℃ and the growth pressure of 10000Pa to prepare a Si-doped InGaN thin film layer with the thickness of 5 mu m, namely the n-InGaN thin film layer. SiH4The gas is used as an n-type dopant to make the InGaN thin film layer n-type.
(3) Placing the n-InGaN thin film layer prepared by the method as a substrate at a position 4cm away from the downstream boundary of a single-temperature-zone heating furnace, and using the thickness of 10 multiplied by 20mm2The rectangular Si sheet shields half of the n-InGaN thin film layer along the direction of airflow, and the PN junction with the p-GaS thin film layer/n-InGaN thin film layer deposited on the surface is prepared, and the specific parameters are as follows: the reaction precursor was 0.1g of Ga2S3Powder with the growth temperature of 925 ℃, the growth pressure of 2000Pa, the carrier gas of 15sccm Ar and the reaction gas of 20sccm H2And the reaction time is 30min, and a p-GaS thin film layer with the thickness of about 9 mu m is prepared.
(4) And (3) uniformly coating negative glue on the PN junction of the prepared p-GaS thin film layer/n-InGaN thin film layer, drying and curing, exposing under a patterned mask, heating and curing, and exposing under the condition that the mask is removed. Then, 100nmTi/100nmAu is evaporated on the sample subjected to the photoetching treatment by using an evaporation method, and then a photoresist is stripped through ultrasonic wave, so that a patterned first electrode is obtained on the part of the evaporated n-InGaN thin film layer. And coating even negative glue on the sample coated with the first electrode by vaporization, drying and curing, exposing under a patterned mask, heating and curing, and exposing under the condition that the mask is removed. Then, 100nmNi/100nmAu is evaporated on the sample subjected to the photoetching treatment by using an evaporation method, and then the photoresist is stripped by ultrasound, so that a patterned second electrode is obtained on the part of the sample p-GaS thin film layer on which the first electrode is evaporated. In the embodiment of the application, the Ti/Au composite electrode is a first electrode, the Ti layer is in contact with the n-InGaN thin film layer, and the Au layer is coated outside the Ti layer to avoid the Ti layer from being oxidized; the Ni/Au composite electrode is a second electrode. The photoetching process adopts a negative photoresist process, the negative photoresist (namely the photoresist) is subjected to photosensitive curing, the non-photosensitive part is dissolved in a developing solution, a sample after development is subjected to evaporation, an upper electrode layer is subjected to evaporation, and the photoresist is stripped, so that the patterned first electrode and the patterned second electrode are obtained.
The blue light detector in this example has I-V curves of response to blue light with a wavelength of 470nm at different optical power densities, as shown in FIG. 2, it can be seen from FIG. 2 that at 5V bias, the photocurrent increases with the increase of the light intensity, the rectification ratio is about 5, and furthermore, at an optical power density of 1578mW/cm2Under the bias conditions of 470nm and 5V, according to the formula R ═ Iph/(PS)，IphThe light current is obtained by subtracting dark current in darkness from total current under illumination; p is the illumination power density, S is the illumination effective area, R is the responsivity, and R can be calculated to be 0.129A/W, which further indicates that the invention has higher response speed. FIG. 3 is a graph showing the stability of the photo-response of the blue-ray detector under the illumination of 470nm at a bias voltage of 0V, and FIG. 3 shows that the detector has 1165mW/cm light intensity at the bias voltage of 0V2And the blue light with the wavelength of 470nm has stable and repeatable light response characteristics. FIG. 4 is a graph of I-T curves at 470nm at 0V bias for the blue-light detector of this example, and 1165mW/cm for the blue-light detector of this example at 0V bias2The result of the response speed of blue light with a wavelength of 470nm is: the rise time is 630 mus and the decay time is 1000 mus, which shows that the light response speed of the blue light detector in the invention is faster. As can be seen from fig. 3 and fig. 4, the blue light detector of the present invention still has a high photo-response speed and stable and repeatable photo-response characteristics under the bias of 0V, further indicating that the blue light detector of the present invention has self-power characteristics.
In FIG. 2, in the dark, VdsCorresponding to 5VdsI.e. dark current, dark current IdarkIs 0.05mA, wherein, IdarkIs dark current, VdsIs the drain-source voltage.
The specific detectivity is calculated by the formula: d*＝A1/2R/(2eIdark)1/2，D*Specific detectivity, A is the effective illumination area, R is responsivity, e is the amount of elementary charge, IdarkIs a dark current, calculated according to FIG. 2, in the dark, VdsWhen 5V, the obtained D is calculated*＝1.1*1010Jones, is a unit of specific detectivity.
It can be seen that the blue light detector in embodiment 1 has a lower dark current and a higher specific detectivity.
Example 2
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the substrate is provided with the n-InGaN thin film layer, and the n-InGaN thin film layer is provided with the p-GaS thin film layer and the first electrode; the p-GaS thin film layer is positioned on one side of the n-InGaN thin film layer, the first electrode is positioned on the other side of the n-InGaN thin film layer, and the p-GaS thin film layer is provided with a second electrode. The thickness of the p-GaS thin film layer is 4 mu m, and the substrate is an n-Si sheet; the n-InGaN thin film layer is an Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 7 micrometers. The 100nmCr/100nmAu composite electrode is a first electrode, and 200nmAu is a second electrode.
The blue light detector in the embodiment is prepared by the following preparation method, and specifically comprises the following steps:
(1) cutting a 2-inch (111) -plane n-Si sheet into 20X 20mm pieces2And ultrasonically cleaning the square with acetone, absolute ethyl alcohol and deionized water for 10min, and finally drying the square with a nitrogen gun to obtain a clean substrate.
(2) Putting the pretreated (111) plane n-Si wafer substrate into a reaction cavity of Metal Organic Chemical Vapor Deposition (MOCVD) reaction equipment, then introducing 60sccm of trimethyl gallium, 120sccm of trimethyl indium, 170sccm of ammonia gas, 3sccm of silane and 300sccm of hydrogen gas into the reaction cavity in a hydrogen atmosphere, and growing for 2 hours at a growth temperature of 950 ℃ and a growth pressure of 30000Pa to prepare a Si-doped InGaN thin film with the thickness of 7 mu m, namely an n-InGaN thin film layer.
(3) Placing the prepared n-InGaN thin film layer as a substrate 4.5cm away from the downstream boundary of a single-temperature-zone furnaceIn a combined use of 10X 20mm2The rectangular Si sheet shields half of the InGaN thin film layer along the direction of airflow, and the PN junction of the p-GaS thin film layer/n-InGaN thin film layer is prepared, and the specific parameters are as follows: the reaction precursor was 0.15g of Ga2S3Powder, the reaction temperature is 940 ℃, the growth air pressure is 5000Pa, the carrier gas is 12sccm of Ar, and the reaction gas is 15sccm of H2And the reaction time is 20min, and a p-GaS thin film layer with the thickness of about 4 mu m is prepared.
(4) And (3) directly covering the P-GaS thin film layer part by using the prepared PN junction of the p-GaS thin film layer/n-InGaN thin film layer through a patterned hard mask, and evaporating and plating patterned 100nmCr/100nmAu on the n-InGaN thin film layer to prepare a first electrode. Similarly, the patterned hard mask is used to cover the part of the n-InGaN film layer, and the patterned 200nmAu is vapor-plated on the GaS film to prepare the second electrode.
Example 3
Referring to the schematic structural diagram of the blue light detector in fig. 1, the blue light detector in this example includes a substrate, an n-InGaN thin film layer, a p-GaS thin film layer, a first electrode, and a second electrode, where the substrate is provided with the n-InGaN thin film layer, and the n-InGaN thin film layer is provided with the p-GaS thin film layer and the first electrode; the p-GaS thin film layer is positioned on one side of the n-InGaN thin film layer, the first electrode is positioned on the other side of the n-InGaN thin film layer, and the p-GaS thin film layer is provided with a second electrode. The thickness of the p-GaS thin film layer is 16 μm, and the substrate is LiGaO3A substrate; the n-InGaN thin film layer is an Si-doped InGaN thin film layer, and the thickness of the n-InGaN thin film layer is 6 micrometers. The 100nmAl/100nmAu composite electrode is a first electrode, and the 200nmPT is a second electrode.
The blue light detector in the embodiment is prepared by the following preparation method, and specifically comprises the following steps:
(1) LiGaO to be purchased3Cutting the block crystal into 20 × 20mm2And ultrasonically cleaning the square with acetone, absolute ethyl alcohol and deionized water for 10min, and finally drying the square with a nitrogen gun to obtain a clean substrate.
(2) Pre-treated LiGaO3The substrate is put into a reaction chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) reaction device and then is introduced into a hydrogen atmosphereTrimethyl gallium of 120sccm, trimethyl indium of 150sccm, ammonia gas of 240sccm, silane of 4sccm and hydrogen gas of 400sccm, and the Si-doped InGaN thin film, i.e., the n-InGaN thin film layer, is grown for 3 hours at a growth temperature of 1000 ℃ and a growth pressure of 20000Pa to prepare a Si-doped InGaN thin film with a thickness of 6 μm.
(3) Placing the prepared n-InGaN thin film layer as a substrate at a distance of 5cm from the downstream boundary of the single-temperature-zone furnace, and using the thickness of 10 x 20mm2The rectangular Si sheet shields half of the InGaN film along the direction of airflow, and the PN junction of the p-GaS film layer/n-InGaN film layer is prepared, and the specific parameters are as follows: the reaction precursor was 0.2g of Ga2S3Powder with the growth temperature of 900 ℃, the growth pressure of 5000Pa, the carrier gas of 20sccm Ar and the reaction gas of 40sccm H2And reacting for 40min to prepare the p-GaS thin film layer with the thickness of about 16 mu m.
(4) And (3) directly covering the P-GaS thin film layer part by using the prepared PN junction of the p-GaS thin film layer/n-InGaN thin film layer through a patterned hard mask, and evaporating and plating patterned 100nmAl/100nmAu on the n-InGaN thin film layer to prepare a first electrode. Similarly, the patterned hard mask is used to cover the part of the n-InGaN film layer, and the patterned 200nmPT is evaporated on the p-GaS film layer to prepare the second electrode.
The embodiments 2 to 3 have substantially the same experimental effects as the embodiment 1, and all have the advantages of higher response speed, lower dark current and higher specific detectivity.
The embodiments of the present invention have been described in detail, but the present invention is not limited to the embodiments, and various changes can be made without departing from the gist of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
1. A blue light detector, characterized by: the GaN-based light-emitting diode comprises a GaS thin film layer, an InGaN thin film layer and a substrate which are sequentially stacked, wherein the InGaN thin film layer is partially covered on the GaS thin film layer; a first electrode is arranged in the area, not covered by the GaS thin film layer, of the InGaN thin film layer; and a second electrode is arranged on the GaS thin film layer.
2. The blue light detector of claim 1, wherein: the GaS thin film layer is of a p type, the InGaN thin film layer is of an n type, and a PN junction is formed between the GaS thin film layer and the InGaN thin film layer.
3. The blue light detector of claim 2, wherein: and a II-type energy band structure is formed between the PN junctions.
4. The blue light detector according to claim 1 or 2, characterized in that: the InGaN thin film layer is doped with at least one of Si and Zn.
5. The blue light detector according to claim 1 or 2, characterized in that: the thickness of the InGaN thin film layer is 1-20 mu m.
6. The blue light detector according to claim 1 or 2, characterized in that: the thickness of the GaS thin film layer is 100 nm-20 mu m.
7. The blue light detector of claim 1, wherein: the material of the first electrode is at least one of Ti, Cr and Al; the material of the second electrode is at least one of Ni, Au and Pt.
8. The blue light detector of claim 1, wherein: the substrate is sapphire, Si or LiGaO3At least one of (1).
9. The method for preparing a blue light detector as claimed in any one of claims 1 to 8, wherein: the method comprises the following steps:
s1: forming an InGaN thin film layer on a substrate by a metal organic chemical vapor deposition method;
s2: by chemical vapour deposition of Ga2S3Reducing the vapor by hydrogen, and performing partial deposition reaction on the InGaN thin film layer to form a GaS thin film layer;
s3: forming a first electrode on the InGaN thin film layer in a region not covered by the GaS thin film layer, and forming a second electrode on the GaS thin film layer; and manufacturing the blue light detector.
10. Use of the blue light detector of any one of claims 1 to 8 in optical communications.
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Citations (3)
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| CN105405915A (en) * | 2015-12-04 | 2016-03-16 | 华南理工大学 | InGaN-based blue light detector and preparation method therefor |
| CN112201711A (en) * | 2020-09-10 | 2021-01-08 | 湖北大学 | ZnO-based homojunction self-driven ultraviolet photoelectric detector and preparation method thereof |
| CN113972294A (en) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405915A (en) * | 2015-12-04 | 2016-03-16 | 华南理工大学 | InGaN-based blue light detector and preparation method therefor |
| CN112201711A (en) * | 2020-09-10 | 2021-01-08 | 湖北大学 | ZnO-based homojunction self-driven ultraviolet photoelectric detector and preparation method thereof |
| CN113972294A (en) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | Titanium carbide/InGaN heterojunction blue light detector and preparation method thereof |
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