CN114883433A - InGaN visible light detector and preparation method and application thereof - Google Patents

InGaN visible light detector and preparation method and application thereof Download PDF

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CN114883433A
CN114883433A CN202210360039.9A CN202210360039A CN114883433A CN 114883433 A CN114883433 A CN 114883433A CN 202210360039 A CN202210360039 A CN 202210360039A CN 114883433 A CN114883433 A CN 114883433A
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layer
visible light
light detector
functional layer
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李国强
孔德麒
王文樑
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South China University of Technology SCUT
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Abstract

The invention provides an InGaN visible light detector, a preparation method and an application thereof, wherein the detector comprises a substrate, a buffer layer, an InGaN functional layer and Ti which are sequentially arranged from bottom to top 3 C 2 An electrode; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top. By providing Ti on the InGaN functional layer 3 C 2 The electrode enables the InGaN blue light detector to have a self-powered characteristic, improves the responsivity and reduces the dark current; at the same time Ti 3 C 2 The high-transmittance and high-conductivity semiconductor material has high light transmittance and conductivity, can increase the light receiving area of a device, prolongs the service life of a current carrier, improves the migration rate of the current carrier, and reduces electric leakage.

Description

InGaN visible light detector and preparation method and application thereof
Technical Field
The invention belongs to the technical field of visible light detectors, and particularly relates to an InGaN visible light detector, and a preparation method and application thereof.
Background
Indium gallium nitride (InGaN) material is used as one of research hotspots of a third-generation semiconductor material, has stable chemical property, high breakdown field resistance and thermal conductivity, can realize continuous adjustment of a band gap within the range of 0.7eV (infrared) to 3.4eV (ultraviolet) by adjusting In components, and is an ideal material for manufacturing a photoelectric detector applied to visible light communication. However, the large defect density, low carrier mobility, and relatively low carrier lifetime of InGaN materials limit the photodetection performance caused by the large lattice mismatch between InGaN and the substrate.
Although significant efforts have been made in research for InGaN-based detectors, no commercial conversion has been achieved to date. The fundamental problem restricting the development and application of the InGaN detector is the material quality problem, and the key problem is the device optimization problem.
Mxenes has received much attention since its report in 2011. Mxenes and films thereof can be generally obtained by stripping Max phase through low-temperature solution treatment, and the production method is simple. The metal conductive film has metal conductivity and good light transmittance, and the work function and the electronic band structure of Mxenes can be flexibly adjusted by changing the surface groups and types of the Mxenes. The work function of the material can be adjusted within a wide range of 1.6-8.0 eV, schottky contact with various light absorption materials is facilitated, and transmission of photon-generated carriers is enhanced.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art described above. To this end, a first aspect of the present invention proposes an InGaN visible light detector having a high carrier lifetime, a high carrier mobility, and a high sensitivity.
The second aspect of the invention provides a preparation method of the InGaN visible light detector.
The third aspect of the invention provides an application of the InGaN visible light detector.
According to a first aspect of the present invention, an InGaN visible light detector is provided, which includes a substrate, a buffer layer, an InGaN functional layer, and Ti sequentially arranged from bottom to top 3 C 2 An electrode; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, wherein the AlN layer is arranged on the substrate.
In the invention, the AlN/AlGaN/GaN buffer layer is arranged to reduce dislocation and release stress, so that the defect density is 10 10 Reduced to 10 4 And the quality of the grown InGaN material is better. By providing Ti on the InGaN functional layer 3 C 2 The electrode enables the device to have power supply characteristics, improves the responsivity and reduces the dark current; with Ti 3 C 2 As the electrode, the InGaN visible light detector has the characteristics of simple structure and easy preparation of the MSM detector; at the same time Ti 3 C 2 The high-transmittance and high-conductivity semiconductor material has high light transmittance and conductivity, can increase the light receiving area of a device, prolongs the service life of a current carrier, improves the migration rate of the current carrier, and reduces electric leakage.
In some embodiments of the invention, the Ti is 3 C 2 The thickness of the electrode is 20 nm-30 nm. In the present invention, Ti 3 C 2 The electrode facilitates current conduction at the thickness, below which current conduction is blocked, and above which the device suffers from poor light acceptance.
In some preferred embodiments of the present invention, the mole fraction of the In component In the InGaN functional layer is In the range of 10% to 30%.
In some more preferred embodiments of the present invention, the InGaN functional layer has a thickness of 25nm to 50 nm. The InGaN film grown under the thickness has better quality.
In some more preferred embodiments of the present invention, the AlN layer, the AlGaN layer, and the GaN layer in the buffer layer have thicknesses of 250nm to 350nm, and 1.0 μm to 2.0 μm, respectively.
In some more preferred embodiments of the present invention, the substrate is a Si substrate.
According to a second aspect of the present invention, a method for manufacturing the InGaN visible light detector is provided, including the following steps:
s1: growing a buffer layer on the substrate, and then growing an InGaN functional layer on the buffer layer;
s2: photoetching the upper surface of the InGaN functional layer, and transferring Ti by a wet process 3 C 2 The electrode is transferred on the upper surface of the InGaN functional layer.
In some embodiments of the present invention, the buffer layer is epitaxially grown on the substrate by using a MOCVD method.
In some preferred embodiments of the invention, the MOCVD process is a metal organic chemical vapor deposition process.
In some more preferred embodiments of the present invention, the temperatures of the AlN layer, the AlGaN layer, and the GaN layer epitaxially grown on the substrate sequentially from bottom to top by using the MOCVD method are 1000 ℃ to 1100 ℃, and 1050 ℃ to 1150 ℃, respectively; preferably, when each buffer layer is grown, the raw materials used for each layer are an Al source, a Ga source, and NH 3 (ii) a The flow rate is 120sccm to 160 sccm.
In some more preferred embodiments of the present invention, the temperature for growing the InGaN functional layer on the buffer layer is 550 ℃ to 650 ℃.
In some more preferred embodiments of the present invention, the raw materials for growing the InGaN functional layer are an In source, a Ga source and NH 3 (ii) a The flow rate is 120-160 sccm.
In some more preferred embodiments of the present invention, in S2, the photolithography includes the steps of: spin coating, baking, exposing and developing.
In some more preferred embodiments of the present invention, the temperature of the baking glue is 100 ℃ to 110 ℃; the time for drying the glue is 45-55 s, the time for exposing is 15-20 s, and the time for developing is 60-65 s.
In some more preferred embodiments of the present invention, the wet transfer method refers to: mixing Ti 3 C 2 Prepared into a concentration of 0.005 mg/mL-0.01 mg/mL, dropped on the surface of an InGaN functional layer, dried under the vacuum condition at the temperature of 55-65 ℃ to obtain the Ti 3 C 2 And an electrode.
According to a third aspect of the present invention, an application of the InGaN visible light detector in blue light detection is provided.
In some embodiments of the invention, the blue light detection is blue light detection at a bias voltage of 0V to 5V.
The invention has the beneficial effects that:
1. the invention arranges AlN/AlGaN/GaN bufferStrike layer, reduce dislocation, release stress, make defect density from 10 10 Reduced to 10 4 And the quality of the grown InGaN material is better.
2. In the present invention, Ti is provided on an InGaN functional layer 3 C 2 The electrode enables the InGaN blue light detector to have a self-powered characteristic, improves the responsivity and reduces the dark current; at the same time Ti 3 C 2 The high-transmittance and high-conductivity semiconductor material has high light transmittance and conductivity, can increase the light receiving area of a device, prolongs the service life of a current carrier, improves the migration rate of the current carrier, and reduces electric leakage.
3. The InGaN visible light detector of the invention can be used for blue light detection under 0 bias.
Drawings
The invention is further described with reference to the following figures and examples, in which:
fig. 1 is a schematic structural cross-sectional view of an InGaN visible light detector according to an embodiment of the present invention;
fig. 2 is a dark current graph of the InGaN visible light detector prepared in example 1;
fig. 3 is a graph of the spectral response of the InGaN visible light detector prepared in example 1;
FIG. 4 is the I-T curve under 0 bias for the InGaN visible light detector prepared in example 1;
wherein in fig. 1, 1 is denoted as a Si substrate; 2 is represented as a buffer layer; 3 is represented as an InGaN functional layer; 4 is represented by Ti 3 C 2 And an electrode.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
Example 1
The present embodiment provides an InGaN visible light detector, as shown in FIG. 1, including a secondary lensA Si substrate 1, a buffer layer 2, an InGaN functional layer 3 and Ti which are sequentially arranged from bottom to top 3 C 2 And an electrode 4. The buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the thicknesses of the AlN layer, the AlGaN layer and the GaN layer are respectively 300nm, 300nm and 1.5 mu m. The InGaN functional layer 3 is disposed on the GaN layer of the buffer layer 2. The thickness of the InGaN functional layer 3 is 35nm, Ti 3 C 2 The thickness of the electrode 4 was 25 nm.
The embodiment also provides a method for preparing the InGaN visible light detector, which comprises the following steps:
s1, growing a buffer layer 2 on the Si substrate 1 by adopting an MOCVD method, and then growing an InGaN functional layer 3 on the buffer layer 2;
s2, glue homogenizing, glue drying, exposure and development are carried out on the upper surface of the InGaN functional layer 3, the shape of an electrode is determined, and Ti is transferred by a wet transfer process 3 C 2 The electrode 4 is transferred on the upper surface of the InGaN functional layer 3.
Growing the buffer layer 2 on the Si substrate 1 by the MOCVD method means that the AlN layer, the AlGaN layer, and the GaN layer are epitaxially grown on the Si substrate 1 by the MOCVD method in sequence from bottom to top at 1050 ℃, and 1100 ℃.
The temperature for growing the InGaN functional layer 3 on the buffer layer 2 by the MOCVD method is 600 ℃.
In S2, the baking time was 50 seconds, the baking temperature was 105 ℃, the exposure time was 17 seconds, and the development time was 62 seconds.
Example 2
The present embodiment provides an InGaN visible light detector, as shown in fig. 1, including a Si substrate 1, a buffer layer 2, an InGaN functional layer 3, and Ti that are sequentially arranged from bottom to top 3 C 2 And an electrode 4. The buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the AlN layer, the AlGaN layer and the GaN layer are 250nm, 250nm and 1.0 mu m respectively in thickness. The InGaN functional layer 3 is disposed on the GaN layer of the buffer layer 2. The thickness of the InGaN functional layer 3 is 25nm, Ti 3 C 2 The thickness of the electrode 4 was 20 nm.
The embodiment also provides a method for preparing the InGaN visible light detector, which comprises the following steps:
s1, growing a buffer layer 2 on the Si substrate 1 by adopting an MOCVD method, and then growing an InGaN functional layer 3 on the buffer layer 2;
s2, glue homogenizing, glue drying, exposure and development are carried out on the upper surface of the InGaN functional layer 3, the shape of an electrode is determined, and Ti is transferred by a wet transfer process 3 C 2 The electrode 4 is transferred on the upper surface of the InGaN functional layer 3.
The buffer layer 2 is grown on the Si substrate 1 by an MOCVD method, namely, an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the Si substrate 1 in sequence from bottom to top by the MOCVD method, and the temperatures for growing the AlN layer, the AlGaN layer and the GaN layer are 1000 ℃, 1000 ℃ and 1050 ℃ respectively.
The temperature for growing the InGaN functional layer 3 on the buffer layer 2 by the MOCVD method is 550 ℃.
In S2, the baking time was 45S, the baking temperature was 100 ℃, the exposure time was 15S, and the development time was 60S.
Example 3
The present embodiment provides an InGaN visible light detector, as shown in fig. 1, including a Si substrate 1, a buffer layer 2, an InGaN functional layer 3, and Ti that are sequentially arranged from bottom to top 3 C 2 And an electrode 4. The buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, and the AlN layer, the AlGaN layer and the GaN layer are respectively 350nm, 350nm and 2.0 mu m in thickness. The InGaN functional layer 3 is disposed on the GaN layer of the buffer layer 2. The thickness of the InGaN functional layer 3 is 40nm, Ti 3 C 2 The thickness of the electrode 4 was 30 nm.
The embodiment also provides a method for preparing the InGaN visible light detector, which comprises the following steps:
s1, growing a buffer layer 2 on the Si substrate 1 by adopting an MOCVD method, and then growing an InGaN functional layer 3 on the buffer layer 2;
s2, glue homogenizing, glue drying, exposure and development are carried out on the upper surface of the InGaN functional layer 3, the shape of an electrode is determined, and Ti is transferred by a wet transfer process 3 C 2 The electrode 4 is transferred on the upper surface of the InGaN functional layer 3.
Growing the buffer layer 2 on the Si substrate 1 by using the MOCVD method means that the AlN layer, the AlGaN layer, and the GaN layer are epitaxially grown on the Si substrate 1 by using the MOCVD method in sequence from bottom to top at temperatures of 1100 ℃, and 1150 ℃.
The temperature for growing the InGaN functional layer 3 on the buffer layer 2 using the MOCVD method is 650 ℃.
In S2, the baking time was 55S, the baking temperature was 110 ℃, the exposure time was 20S, and the development time was 65S.
Comparative example
This comparative example provides an InGaN visible light detector having the same composition and fabrication method as example 1 except that Ti in example 1 is used 3 C 2 The electrodes were replaced with Au electrodes, which were prepared by evaporation. The evaporation rate is 0.225nm/min, and the thickness is 30 nm.
Test examples
The InGaN visible light detectors prepared in example 1 and comparative example 1 were tested.
FIG. 2 is a dark current curve of the InGaN visible light detector obtained in example 1 and the comparative example, as shown in FIG. 2, under a bias of 5V, including Ti 3 C 2 The dark current of the detector of the electrode is only 0.05mA which is far lower than 0.48mA of the dark current of the detector of the Au electrode, and the dark current is low, which indicates that the carrier injection efficiency of the device is high.
Fig. 3 is a graph showing the spectral response of the InGaN visible detectors obtained in example 1 and comparative example 1. As can be seen from the curve in FIG. 3, Ti is present at 460nm under a bias of 5V 3 C 2 The dark responsivity of the detector of the electrode is 1.25A/W which is far higher than 0.23A/W of the dark responsivity of the detector of the Au electrode. The detector has higher quantum efficiency and higher sensitivity in a blue light waveband, and realizes the enhanced absorption of blue light.
Fig. 4 is the I-T curve at 0 bias for the InGaN visible light detector obtained in example 1. As can be seen from the graph of FIG. 4, the rise time and fall time of the device are 600 μ s and 900 μ s at 460nm and 0V bias. The detector has self-power supply characteristic and has higher response speed in the blue light wave band.
Through experiments, example 2 and example 3 have similar effects.
The embodiments of the present invention have been described in detail, but the present invention is not limited to the embodiments, and various changes can be made without departing from the gist of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.

Claims (10)

1. An InGaN visible light detector, comprising: comprises a substrate, a buffer layer, an InGaN functional layer and Ti which are arranged from bottom to top in sequence 3 C 2 An electrode; the buffer layer is an AlN layer, an AlGaN layer and a GaN layer which are sequentially arranged from bottom to top, wherein the AlN layer is arranged on the substrate.
2. InGaN visible light detector according to claim 1, characterized in that: the Ti 3 C 2 The thickness of the electrode is 20 nm-30 nm.
3. InGaN visible light detector according to claim 1, characterized in that: the mole fraction of the In component In the InGaN functional layer is 10% -30%.
4. InGaN visible light detector according to claim 1, characterized in that: the thickness of the InGaN functional layer is 25 nm-50 nm.
5. InGaN visible light detector according to claim 1, characterized in that: the AlN layer, the AlGaN layer and the GaN layer in the buffer layer have the thicknesses of 250-350 nm, 250-350 nm and 1.0-2.0 mu m respectively.
6. A method for preparing the InGaN visible light detector as claimed in any of claims 1 to 5, comprising the steps of:
s1: growing a buffer layer on the substrate, and then growing an InGaN functional layer on the buffer layer;
s2: photoetching the upper surface of the InGaN functional layer, and transferring Ti by a wet process 3 C 2 The electrode is transferred on the upper surface of the InGaN functional layer.
7. The method of claim 6, wherein: the wet transfer method comprises the following steps: mixing Ti 3 C 2 Prepared into a concentration of 0.005 mg/mL-0.01 mg/mL, dropped on the surface of an InGaN functional layer, dried under the vacuum condition at the temperature of 55-65 ℃ to obtain the Ti 3 C 2 And an electrode.
8. The method of claim 6, wherein: in S2, the photolithography includes the steps of: spin coating, baking, exposing and developing.
9. Use of the InGaN visible light detector of any of claims 1-5 in blue light detection.
10. Use according to claim 9, characterized in that: the blue light detection is blue light detection under bias voltage of 0V-5V.
CN202210360039.9A 2022-04-07 2022-04-07 InGaN visible light detector and preparation method and application thereof Pending CN114883433A (en)

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