CN113960381A - 一种非接触式电场测量传感器 - Google Patents
一种非接触式电场测量传感器 Download PDFInfo
- Publication number
- CN113960381A CN113960381A CN202111240918.XA CN202111240918A CN113960381A CN 113960381 A CN113960381 A CN 113960381A CN 202111240918 A CN202111240918 A CN 202111240918A CN 113960381 A CN113960381 A CN 113960381A
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- Prior art keywords
- piezoelectric material
- electric field
- material crystal
- piezoresistor
- measurement sensor
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- 230000005684 electric field Effects 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims abstract description 55
- 239000011521 glass Substances 0.000 claims abstract description 37
- 238000005259 measurement Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000001737 promoting effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 10
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202111240918.XA CN113960381A (zh) | 2021-10-25 | 2021-10-25 | 一种非接触式电场测量传感器 |
Applications Claiming Priority (1)
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CN202111240918.XA CN113960381A (zh) | 2021-10-25 | 2021-10-25 | 一种非接触式电场测量传感器 |
Publications (1)
Publication Number | Publication Date |
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CN113960381A true CN113960381A (zh) | 2022-01-21 |
Family
ID=79466721
Family Applications (1)
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CN202111240918.XA Pending CN113960381A (zh) | 2021-10-25 | 2021-10-25 | 一种非接触式电场测量传感器 |
Country Status (1)
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CN (1) | CN113960381A (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060124537A (ko) * | 2005-05-30 | 2006-12-05 | 미츠비시덴키 가부시키가이샤 | 반도체 압력 센서 |
KR20090014065A (ko) * | 2007-08-03 | 2009-02-06 | 권명주 | 압전단결정 박막을 이용한 자기-압전 반도체 통합센서 |
CN109212328A (zh) * | 2018-10-24 | 2019-01-15 | 清华大学 | 基于压电效应的高精度高场强电容式微型电场测量传感器件 |
CN109879239A (zh) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | 一种双h型受压梁硅微谐振压力传感器芯片及其制备方法 |
CN110045151A (zh) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | 一种十字变形梁结构的高g值加速度计芯片及其制备方法 |
CN112505438A (zh) * | 2020-11-26 | 2021-03-16 | 清华大学 | 基于静电力和压阻效应的微型电场传感器件 |
CN113092885A (zh) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | 压阻式微型电场传感器及其制备方法、电场传感器 |
-
2021
- 2021-10-25 CN CN202111240918.XA patent/CN113960381A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060124537A (ko) * | 2005-05-30 | 2006-12-05 | 미츠비시덴키 가부시키가이샤 | 반도체 압력 센서 |
KR20090014065A (ko) * | 2007-08-03 | 2009-02-06 | 권명주 | 압전단결정 박막을 이용한 자기-압전 반도체 통합센서 |
CN109212328A (zh) * | 2018-10-24 | 2019-01-15 | 清华大学 | 基于压电效应的高精度高场强电容式微型电场测量传感器件 |
CN109879239A (zh) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | 一种双h型受压梁硅微谐振压力传感器芯片及其制备方法 |
CN110045151A (zh) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | 一种十字变形梁结构的高g值加速度计芯片及其制备方法 |
CN112505438A (zh) * | 2020-11-26 | 2021-03-16 | 清华大学 | 基于静电力和压阻效应的微型电场传感器件 |
CN113092885A (zh) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | 压阻式微型电场传感器及其制备方法、电场传感器 |
Non-Patent Citations (1)
Title |
---|
FEN XUE 等: "Piezoelectric–Piezoresistive Coupling MEMS Sensors for Measurement of Electric Fields of Broad Bandwidth and Large Dynamic Range", IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS * |
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Country or region after: China Address after: 510000 3 building, 3, 4, 5 and J1 building, 11 building, No. 11, Ke Xiang Road, Luogang District Science City, Guangzhou, Guangdong. Applicant after: China South Power Grid International Co.,Ltd. Applicant after: Foshan University Address before: 510000 3 building, 3, 4, 5 and J1 building, 11 building, No. 11, Ke Xiang Road, Luogang District Science City, Guangzhou, Guangdong. Applicant before: China South Power Grid International Co.,Ltd. Country or region before: China Applicant before: FOSHAN University |
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