CN113063529A - 一种微机械谐振式压力传感器及制造方法 - Google Patents

一种微机械谐振式压力传感器及制造方法 Download PDF

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CN113063529A
CN113063529A CN202110299610.6A CN202110299610A CN113063529A CN 113063529 A CN113063529 A CN 113063529A CN 202110299610 A CN202110299610 A CN 202110299610A CN 113063529 A CN113063529 A CN 113063529A
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饶宾期
周凯
刘婧琦
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China Jiliang University
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    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G01L1/162—Measuring force or stress, in general using properties of piezoelectric devices using piezoelectric resonators
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    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
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    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/008—Transmitting or indicating the displacement of flexible diaphragms using piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
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    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors

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Abstract

本发明公开了一种微机械谐振式压力传感器及制造方法。所述微机械谐振式压力传感器包括感压膜、支撑梁和谐振梁；所述谐振梁置于感压膜上方，支撑梁根部形成有激励电阻和检查电阻；所述支撑梁形成于谐振梁上方，每个支撑梁根部制作检测电阻用于检测支撑梁根部应变；所述感压膜由经过各向异性腐蚀液腐蚀SOI硅片背面形成；本发明采用梁‑膜一体化结构，改善传感器压力与谐振频率的线性变化，提高传感器的压力灵敏度和线性度；本发明采用双谐振梁差分结构，两个谐振梁具有相同的固有频率，利用差频输出来表征传感器的压力特性，消除了由于温度等环境因素引起的工作梁谐振频率的变化，从而提高了传感器的测量精度和稳定性。

Description

一种微机械谐振式压力传感器及制造方法
技术领域
本发明涉及一种微机械谐振式压力传感器，适用于微电子机械系统(MEMS)领域。
背景技术
基于MEMS技术的硅微机械谐振压力传感器是目前市场上最精确的压力传感器之一，具有体积小、重量轻、功耗低、结构紧凑、易于集成化和利于批量生产等众多优点。在航空航天、工业过程控制和其它精密测量场合十分适用，并在军事和民用领域有着十分广泛的应用和巨大的市场。
然而现有的微机械谐振式压力传感器存在着等问题。高温、高辐射、高湿等条件下，传感器容易发生电荷漂移而导致性能不稳定，导致精确度下降。在以上恶劣的环境中，传感器的关键结构的材料发生特性失配，如谐振梁机械强度变化，也会导致传感器性能下降。
发明内容
为克服现有技术的缺陷，本发明的实施案例提供一种微机械谐振式压力传感器，可以消除由于温度等环境因素引起的工作梁谐振频率的变化，提高了传感器的测量精度和稳定性。
为实现上述压力传感目的，本发明提供以下技术方案：一种微机械谐振式压力传感器，它包括硅片、绝缘层、谐振梁、支撑梁、压感膜、腔室、电阻和焊盘。谐振梁置于感压膜上方，谐振梁根部有激励电阻和检查电阻；检测电阻用于检测谐振梁根部应变；谐振梁、感压膜是由一块(100)面SOI硅片在腐蚀液中经过各向异性腐蚀后得到。
所述传感器具有双梁差分式结构，两根梁对称且具有相同固有频率。
所述压感膜悬置于两个硅岛之间，感压膜与支撑梁相连接。
所述谐振梁由氮化硅薄膜、支撑梁和硅层组成。
一种微机械谐振式压力传感器的制造方法方法，包括如下步骤：
步骤S1：原始硅片是(100)面双面抛光SOI硅片，在硅片正反两面制作绝缘层；
步骤S2：光刻背腐蚀窗口，去除背腐蚀窗口内的绝缘层，并利用各向异性腐蚀工艺去除背腐蚀窗口内的硅形成深坑；
步骤S3：去除背面的绝缘层，SOI硅片背面与另一块(100)面双面抛光硅片键合，键合后的硅片背面制作绝缘层保护；
步骤S4：正面绝缘层上沉积多晶硅，掺杂、光刻制作电阻。溅射、光刻制作引线和焊盘；
步骤S5：正面沉积氮化硅掩蔽层，光刻谐振梁和支撑梁图形，去除图形外的氮化硅掩蔽层和绝缘层；
步骤S6：正面刻蚀谐振梁和支撑梁图形外的硅衬底直至埋氧化层。光刻焊盘，去除焊盘上的氮化硅掩蔽层；
步骤S7：氢氟酸腐蚀埋氧化层，释放谐振梁、支撑梁和压感膜。
上述的制备方法中，硅片的采用电阻率小于0.5Ω·cm。
上述的制备方法中，硅片正面硼扩散是在980℃，氮气坏境，扩散时间为50分钟。
上述的制备方法中，腐蚀液为氢氧化钾溶液。
上述的制备方法中，背腐蚀坑的深度至少达到150微米。
有益效果：与现有传感器相比，本发明具有以下优点：
本发明采用梁-膜一体化结构，改善传感器压力与谐振频率的线性变化，提高传感器的压力灵敏度和线性度；采用双谐振梁差分结构，两个谐振梁具有相同固有频率，利用差频输出表征传感器的压力特性，消除由于温度等环境因素引起的工作梁谐振频率的变化，从而提高了传感器的测量精度和稳定性。
附图说明
图1为本发明提供的一种微机械谐振式压力传感器的三维结构图。
图2为绝缘层上等距排列的电阻，同时电阻外侧有等距排布的焊盘。
图3～11为本发明一实施例中压阻式的微机械压力传感器的一个或多个制备步骤所产生的结构的示意图；
具体实施方式
下面通过具体实施例进一步说明本发明的实质性特点。
所述微机械谐振式压力传感器包括感压膜、支撑梁和谐振梁；所述谐振梁置于感压膜上方，支撑梁根部形成有激励电阻和检查电阻；所述支撑梁形成于谐振梁上方，支撑梁根的部制作检测电阻用于检测支撑梁的根部应变。
如图1所示，为本发明提供的一种微机械谐振式压力传感器的三维结构图，所述传感器有两根具有相同固有频率的谐振梁；传感器采用差分结构，利用差频输出消除环境温度引起的频率变化。
本实施例的制作工艺步骤如下(图3至图11)：
步骤S1，原始硅片是(100)面双面抛光的SOI硅片，通过1150℃热氧化，在硅片正反两面生长制作绝缘层；
步骤S2，光刻背腐蚀窗口，去除背腐蚀窗口内的绝缘层，利用各向异性腐蚀工艺去除背腐蚀窗口内的硅，形成背腐蚀坑；
步骤S3，用氢氟酸去除背面的绝缘层，将SOI硅片的背面与盖板进行键合，键合后的硅片背面制作绝缘层保护。盖板是一块(100)面双面抛光硅片；
步骤S4，正面绝缘层用低压化学气相淀积法淀积多晶硅薄膜，厚度在0.3μm以内；多晶硅薄膜在980℃，氮气坏境中掺杂硼，掺杂时间为50分钟。光刻出激励电阻和检查电阻的图形，用离子刻蚀机刻蚀图形外的多晶硅薄膜，形成激励电阻和检查电阻；
步骤S5，光刻引线和焊盘的图形，并用离子刻蚀机刻蚀图形。用溅射台淀积Au，制作引线和焊盘，厚度在04-0.8μm；
步骤S6，硅片正面淀积氮化硅掩蔽层，光刻出谐振梁和支撑梁图形，用离子刻蚀机去除图形外的氮化硅掩蔽层和绝缘层，直至埋氧化层后停止刻蚀；
步骤S7，硅片正面光刻焊盘图形，刻蚀除去焊盘上面的氮化硅掩蔽层；。
步骤S8，用氢氟酸腐蚀埋氧化层，释放出谐振梁和感压膜。
综上所述，本发明提出的一种微机械压力传感器及其制造方法，所采用的双谐振梁差分结构，一定程度上消除由于温度等环境因素引起的工作梁谐振频率的变化，从而提高了传感器的测量精度和稳定性。

Claims (6)

1.一种微机械谐振式压力传感器，其特征在于：具有双梁差分式结构；所述结构具有谐振梁、支撑梁、感压膜；所述谐振梁位于感压膜上方；所述谐振梁的根部有激励电阻和检查电阻；所述谐振梁、感压膜是由一块(100)面SOI硅片在腐蚀液中经过各向异性腐蚀后得到；所述谐振梁由低压化学气相法淀积的氮化硅薄膜、支撑梁和硅层组成；
所述传感器结构的制造方法如下：
原始硅片是(100)面双面抛光SOI硅片，在硅片正反两面制作绝缘层；
光刻背腐蚀窗口，去除背腐蚀窗口内的绝缘层，并利用各向异性腐蚀工艺得到背腐蚀坑；
去除背面的绝缘层，将SOI硅片与盖板键合，在键合后的硅片背面制作绝缘层保护；
硅片正面绝缘层上沉积多晶硅薄膜，硅片正面硼扩散、光刻并刻蚀多晶硅薄膜形成激励电阻和检查电阻；
正面沉积氮化硅掩蔽层，光刻谐振梁的掩膜图形，刻蚀图形外的氮化硅掩蔽层和绝缘层；
正面刻蚀谐振梁图形外的硅层，光刻焊盘掩膜图形，刻蚀焊盘上的氮化硅掩蔽层；
在氢氟酸腐蚀埋氧化层，释放谐振梁和压感膜。
2.根据权利要求1所述的一种微机械谐振式压力传感器，其特征在于：所述传感器具有双梁差分式结构，两根梁对称且具有相同固有频率。
3.根据权利要求1所述的一种微机械谐振式压力传感器，其特征在于：所述SOI硅片的电阻率小于0.5Ω·cm。
4.根据权利要求1所述的一种微机械谐振式压力传感器，其特征在于：所述硅片正面硼扩散是在980℃，氮气坏境，扩散时间为50分钟。
5.根据权利要求1所述的一种微机械谐振式压力传感器，其特征在于：所述腐蚀液为氢氧化钾溶液。
6.根据权利要求1所述的一种微机械谐振式压力传感器，其特征在于：所述背腐蚀坑的深度至少达到150微米。
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