CN113930729B - High-efficient evaporation device of metallized film - Google Patents
High-efficient evaporation device of metallized film Download PDFInfo
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- CN113930729B CN113930729B CN202111118324.1A CN202111118324A CN113930729B CN 113930729 B CN113930729 B CN 113930729B CN 202111118324 A CN202111118324 A CN 202111118324A CN 113930729 B CN113930729 B CN 113930729B
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- wire assembly
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- rod
- upper tungsten
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- 238000001704 evaporation Methods 0.000 title claims abstract description 26
- 230000008020 evaporation Effects 0.000 title claims abstract description 23
- 239000011104 metalized film Substances 0.000 title claims abstract description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 159
- 230000007246 mechanism Effects 0.000 claims abstract description 62
- 238000007747 plating Methods 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 42
- 239000010937 tungsten Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 30
- 238000007740 vapor deposition Methods 0.000 claims description 24
- 238000009434 installation Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 23
- 239000002184 metal Substances 0.000 abstract description 23
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of metallized film evaporation, in particular to a high-efficiency evaporation device for a metallized film. According to the high-efficiency evaporation device for the metallized film, the evaporated metal scraps are placed in the cavity formed by the lower tungsten wire assembly and the upper tungsten wire assembly, the rotating lower tungsten wire assembly and the upper tungsten wire assembly roll the internal metal materials, and the metal scraps are fully contacted with the heating tungsten wire, so that the metal melting rate is improved, and the evaporation efficiency is further improved; in the device, the upper tungsten wire assembly is controlled to be turned on or off through the angle adjusting mechanism, so that the heating and evaporating requirements of vapor plating metal are met.
Description
Technical Field
The invention relates to the technical field of metallized film evaporation, in particular to a high-efficiency evaporation device for metallized films.
Background
A capacitor is a device that holds electrical charge and is formed by two conductors that are adjacent to each other with a layer of non-conductive dielectric medium sandwiched between them. A thin film capacitor is a type of capacitor, and has excellent performance, is nonpolar, has high insulation resistance, has excellent frequency characteristics (a broad frequency response), and has a small dielectric loss, and is used in a large number of analog circuits.
In a conventional thin film capacitor, a metal foil such as aluminum is laminated as an electrode and a plastic film and then wound. However, there is another method of manufacturing thin film capacitors called metallized film by vacuum vapor depositing a thin metal layer on a plastic film to form an electrode.
In the conventional vapor deposition apparatus, when the metal material is heated to a vapor state, it takes a long time, and the overall vapor deposition efficiency of the metallized film is low.
Disclosure of Invention
The invention provides a high-efficiency evaporation device for a metallized film, which aims at the defects of the prior art.
The invention solves the technical problems by the following technical means:
the high-efficiency evaporation device for the metallized film comprises a workbench, wherein an evaporation chamber is arranged on the workbench, the evaporation chamber is externally connected with a vacuum system, a conveying mechanism for conveying a film substrate and an isolation mechanism for shielding an area of the film substrate which is not required to be coated are arranged in the evaporation chamber, the isolation mechanism is positioned below the conveying mechanism,
the inside of the evaporation chamber is provided with a lower tungsten wire assembly and an upper tungsten wire assembly, both ends of the lower tungsten wire assembly are connected with a supporting substrate through a bearing piece, a supporting mechanism for supporting the lower tungsten wire assembly and the upper tungsten wire assembly is arranged on the supporting substrate, the supporting mechanism is connected with a workbench, and a rotating mechanism for driving the lower tungsten wire assembly and the upper tungsten wire assembly to rotate is arranged on the workbench;
the upper tungsten wire assembly consists of a first upper tungsten wire section and a second upper tungsten wire section, wherein long rods are connected to one ends, far away from each other, of the first upper tungsten wire section and the second upper tungsten wire section through the bearing piece, the bearing piece has a heat insulation function, an angle adjusting mechanism for driving the upper tungsten wire assembly to rotate through the long rods is arranged on the supporting substrate, and a fixing mechanism for fixing the position of the upper tungsten wire assembly through the long rods is arranged on the supporting substrate.
As an improvement of the technical scheme, a first tungsten filament fin plate is arranged in the lower tungsten filament assembly, and second tungsten filament fin plates are arranged on the first upper tungsten filament section and the second upper tungsten filament section.
As an improvement of the technical scheme, the second tungsten filament fin plate is inserted into the lower tungsten filament assembly, and the length of the second tungsten filament fin plate is twice that of the first tungsten filament fin plate.
As the improvement of the technical scheme, the supporting mechanism comprises an annular sliding rail, the annular sliding rail is connected with the workbench through a supporting rod, and a sliding block connected with the supporting substrate is connected to the annular sliding rail in a sliding manner.
As an improvement of the technical scheme, the angle adjusting mechanism comprises an air cylinder and a bearing rod, wherein the air cylinder and the bearing rod are connected with a support substrate, and a rack is connected to the rod part of the air cylinder;
the bearing rod is connected with a central shaft, the central shaft is rotatably sleeved with a disc and a first gear, the disc is connected with the first gear, the first gear is meshed with the rack, and the disc is connected with the long rod.
As an improvement of the technical scheme, the rotating mechanism comprises a first half gear and a second half gear, wherein the first half gear is connected with a bearing piece on the upper tungsten wire assembly, the second half gear is connected with a bearing piece on the lower tungsten wire assembly, and the first half gear and the second half gear form a complete gear a;
the workbench is connected with a servo motor, the output end of the servo motor is connected with a second gear, and the second gear is meshed with the gear A.
As an improvement of the technical scheme, the fixing mechanism comprises an installation cavity formed in the supporting substrate and a limiting groove formed in the long rod, an armature pin rod is rotatably connected to the side wall of the installation cavity, an arc-shaped rod is connected to the armature pin rod, and the movable end of the arc-shaped rod is inserted into the limiting groove;
the bottom wall of the installation cavity is connected with a first electromagnet, and the left side wall of the installation cavity is connected with a second electromagnet.
The invention has the beneficial effects that:
according to the high-efficiency evaporation device for the metallized film, evaporation metal scraps are placed in a cavity formed by the lower tungsten wire assembly and the upper tungsten wire assembly, the rotating lower tungsten wire assembly and the upper tungsten wire assembly roll metal materials in the cavity, and the evaporation metal scraps are fully contacted with heating tungsten wires (the lower tungsten wire assembly and the upper tungsten wire assembly), so that the metal melting rate is improved, and the evaporation efficiency is further improved; in the device, the upper tungsten wire assembly is controlled to be turned on or off through the angle adjusting mechanism, so that the heating and evaporating requirements of vapor plating metal are met;
the arrangement of the first tungsten filament fin plate and the second tungsten filament fin plate increases the area of the heating tungsten filament, improves the mixing degree of vapor deposition metal scraps and improves the melting rate of the vapor deposition metal scraps;
the support mechanism supports the rotating lower tungsten wire assembly and the rotating upper tungsten wire assembly; the rotating mechanism drives the lower tungsten wire component and the upper tungsten wire component to alternately rotate forward and backward;
the fixing mechanism fixes the relative positions of the long rod and the supporting substrate, fixes the relative positions of the tungsten wire assembly and the upper tungsten wire assembly, and keeps the upper tungsten wire assembly in a closed state, so that the operation is simple and the use is convenient.
Drawings
FIG. 1 is a schematic diagram of a high-efficiency vapor deposition device for metallized films according to an embodiment of the present invention;
fig. 2 is an enlarged schematic view of a partial structure of a high-efficiency vapor deposition device for a metallized film according to an embodiment of the present invention;
FIG. 3 is a schematic view of a fixing mechanism of a high-efficiency vapor deposition device for metallized films according to an embodiment of the present invention;
FIG. 4 is a schematic view showing an open state of an upper tungsten filament assembly of a high-efficiency vapor deposition device for metallized films according to an embodiment of the present invention;
reference numerals: a work table 1; a vapor deposition chamber 2; a vacuum system 3; a conveying mechanism 4; an isolation mechanism 5; a lower tungsten wire assembly 6; a first tungsten filament fin 601; an upper tungsten wire assembly 7; a first upper tungsten wire segment 701; a second upper tungsten wire segment 702; a second tungsten fin 703; a receiving member 8; a support substrate 9; a support mechanism 10; an annular slide rail 1001; a support bar 1002; a slider 1003; an angle adjusting mechanism 11; a cylinder 1101; a rack 1102; a receiving bar 1103; a central shaft 1104; a disk 1105; a first gear 1106; a long rod 12; a rotation mechanism 13; a first half gear 1301; a second half gear 1302; a second gear 1303; a servo motor 1304; a fixing mechanism 14; a mounting cavity 1401; armature stick 1402; an arc-shaped lever 1403; a limit groove 1404; a first electromagnet 1405; a second electromagnet 1406.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Examples
As shown in fig. 1, 2, 3 and 4, the high-efficiency vapor deposition device for metallized film of the embodiment comprises a workbench 1, a vapor deposition chamber 2 is arranged on the workbench 1, the vapor deposition chamber 2 is externally connected with a vacuum system 3, a conveying mechanism 4 for conveying a film substrate and an isolation mechanism 5 for shielding an area of the film substrate which is not required to be coated are arranged in the vapor deposition chamber 2, the isolation mechanism 5 is positioned below the conveying mechanism 4,
the inside of the evaporation chamber 2 is provided with a lower tungsten wire assembly 6 and an upper tungsten wire assembly 7, both ends of the lower tungsten wire assembly 6 are connected with a supporting base plate 9 through a bearing piece 8, a supporting mechanism 10 for supporting the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 is arranged on the supporting base plate 9, the supporting mechanism 10 is connected with a workbench 1, and a rotating mechanism 13 for driving the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 to rotate is arranged on the workbench 1;
the upper tungsten wire assembly 7 consists of a first upper tungsten wire section 701 and a second upper tungsten wire section 702, wherein one ends of the first upper tungsten wire section 701 and the second upper tungsten wire section 702, which are far away from each other, are connected with long rods 12 through bearing pieces 8, the bearing pieces 8 have a heat insulation function, an angle adjusting mechanism 11 for driving the upper tungsten wire assembly 7 to rotate through the long rods 12 is arranged on a supporting substrate 9, and a fixing mechanism 14 for fixing the position of the upper tungsten wire assembly 7 through the long rods 12 is arranged on the supporting substrate 9.
In the scheme, vapor deposition metal scraps are placed in a lower tungsten wire assembly 6, an angle adjusting mechanism 11 is used for controlling an upper tungsten wire assembly 7 to rotate, the upper tungsten wire assembly 7 is propped against the lower tungsten wire assembly 6 until being in a horizontal state, the relative positions of a long rod 12 and a supporting substrate 9 are fixed through a fixing mechanism 14, namely, the relative positions of the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 are fixed, a rotating mechanism 13 is used for controlling the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 to alternately rotate in a forward direction and a reverse direction, and a supporting mechanism 10 is used for supporting the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7;
when the evaporated metal scraps are heated to a certain degree, the lower tungsten wire assembly 6 is rotated to a lower position, the rotating mechanism 13 stops working, the fixing mechanism 14 releases the position fixing of the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7, and the upper tungsten wire assembly 7 is controlled to rotate and open through the angle adjusting mechanism 11, so that the metal which is continuously evaporated to a steam state is smoothly emitted to the film substrate;
the vapor plating metal scraps are placed in a cavity formed by the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7, the rotating lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 roll the metal materials inside, and the vapor plating metal scraps are fully contacted with the heating tungsten wires (the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7), so that the metal melting rate is improved, and the vapor plating efficiency is further improved; in the device, the upper tungsten wire assembly 7 is controlled to be turned on or off through the angle adjusting mechanism 11, so that the heating and evaporating requirements of vapor plating metal are met.
As shown in fig. 1, 2 and 4, a first tungsten filament fin 601 is arranged in the lower tungsten filament assembly 6, and a second tungsten filament fin 703 is arranged on each of the first upper tungsten filament section 701 and the second upper tungsten filament section 702;
a second tungsten filament fin 703 is inserted into the interior of the lower tungsten filament assembly 6, the length of the second tungsten filament fin 703 being twice the length of the first tungsten filament fin 601.
In this case, when the lower tungsten filament assembly 6 rotates to the lower side, the vapor deposition metal chips inside the upper tungsten filament assembly 7 drop into the lower tungsten filament assembly 6 and are distributed on both sides of the first tungsten filament fin plate 601; when the upper tungsten wire assembly 7 rotates to the lower part, vapor deposition metal scraps in the lower tungsten wire assembly 6 drop into the upper tungsten wire assembly 7 and are distributed on two sides of the second tungsten wire fin plate 703;
the arrangement of the first tungsten filament fin plate 601 and the second tungsten filament fin plate 703 increases the area of the heated tungsten filament, improves the mixing degree of vapor deposition metal scraps, and improves the melting rate of the vapor deposition metal scraps.
As shown in fig. 2 and 4, the support mechanism 10 comprises an annular slide rail 1001, the annular slide rail 1001 is connected with the workbench 1 through a support rod 1002, and a sliding block 1003 connected with the support substrate 9 is connected on the annular slide rail 1001 in a sliding manner;
the supporting mechanism 10 supports the rotating lower tungsten wire assembly 6 and upper tungsten wire assembly 7, and when the rotating mechanism 13 drives the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 to rotate, the sliding block 1003 in the supporting mechanism 10 rotates on the annular sliding rail 1001.
As shown in fig. 2 and 4, the angle adjusting mechanism 11 includes a cylinder 1101 and a receiving rod 1103, the cylinder 1101 and the receiving rod 1103 are connected to the support base plate 9, and a rack 1102 is connected to the rod portion of the cylinder 1101; the connecting rod 1103 is connected with a central shaft 1104, the central shaft 1104 is rotatably sleeved with a circular disk 1105 and a first gear 1106, the circular disk 1105 is connected with the first gear 1106, the first gear 1106 is meshed with the rack 1102, and the circular disk 1105 is connected with the long rod 12.
When the whole length of the cylinder 1101 is increased, the rack 1102 is driven to move upwards, the rack 1102 is meshed with the first gear 1106, the first upper tungsten wire section 701 is driven to rotate clockwise through the first gear 1106, the circular disk 1105 and the long rod 12, the second upper tungsten wire section 702 is driven to rotate anticlockwise, and the upper tungsten wire assembly 7 is closed;
when the whole length of the cylinder 1101 is shortened, the rack 1102 is driven to move downwards, the rack 1102 drives the first upper tungsten wire section 701 to rotate anticlockwise and the second upper tungsten wire section 702 to rotate clockwise through the first gear 1106, the circular disk 1105 and the long rod 12, and the upper tungsten wire assembly 7 is opened; in the angle adjusting mechanism 11, the position of the upper tungsten wire assembly 7 is changed by changing the whole length of the cylinder 1101, and the upper tungsten wire assembly 7 is controlled to be opened or closed.
As shown in fig. 2 and 4, the rotation mechanism 13 includes a first half gear 1301 and a second half gear 1302, the first half gear 1301 is connected with the bearing piece 8 on the upper tungsten wire assembly 7, the second half gear 1302 is connected with the bearing piece 8 on the lower tungsten wire assembly 6, and the first half gear 1301 and the second half gear 1302 form a complete gear a; the workbench 1 is connected with a servo motor 1304, the output end of the servo motor 1304 is connected with a second gear 1303, and the second gear 1303 is meshed with the gear A.
When the upper tungsten wire assembly 7 is closed, the first half gear 1301 and the second half gear 1302 abut to form a complete gear a, the gear a meshes with the second gear 1303,
the servo motor 1304 is electrified, the forward direction rotates alternately one circle and the reverse direction rotates alternately one circle, the servo motor 1304 drives the second gear 1303 to rotate, and the second gear 1303 drives the lower tungsten wire assembly 6 and the upper tungsten wire assembly 7 to synchronously rotate through the gear A.
As shown in fig. 3, the fixing mechanism 14 comprises a mounting cavity 1401 arranged on the supporting substrate 9 and a limit groove 1404 arranged on the long rod 12, wherein the side wall of the mounting cavity 1401 is rotatably connected with an armature rod 1402, the armature rod 1402 is connected with an arc-shaped rod 1403, and the movable end of the arc-shaped rod 1403 is inserted into the limit groove 1404;
a first electromagnet 1405 is connected to the bottom wall of the installation cavity 1401, and a second electromagnet 1406 is connected to the left side wall of the installation cavity 1401.
Referring to fig. 3, when the upper tungsten wire assembly 7 rotates to a horizontal state against the lower tungsten wire assembly 6, the first electromagnet 1405 is energized, the second electromagnet 1406 is de-energized, the first electromagnet 1405 attracts the armature rod 1402 to rotate counterclockwise, the armature rod 1402 drives the arc rod 1403 to rotate synchronously until the arc rod 1403 is inserted into the limit groove 1404, the relative positions of the long rod 12 and the support substrate 9 are fixed,
when the fixed state of the long rod 12 and the supporting substrate 9 needs to be released, the first electromagnet 1405 is powered off, the second electromagnet 1406 is powered on, the second electromagnet 1406 attracts the armature rod 1402 to rotate clockwise, and the armature rod 1402 drives the arc rod 1403 to rotate synchronously until the arc rod 1403 is separated from the limit groove 1404; the fixing mechanism 14 fixes the relative positions of the tungsten wire assembly 6 and the upper tungsten wire assembly 7, and keeps the upper tungsten wire assembly 7 in a closed state, so that the operation is simple and the use is convenient.
It is noted that relational terms such as first and second, and the like, if any, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (5)
1. The utility model provides a high-efficient evaporation plant of metallized film, includes workstation (1), be provided with evaporation chamber (2) on workstation (1), external vacuum system (3) of evaporation chamber (2), the inside of evaporation chamber (2) is provided with transport mechanism (4) that carry to the film substrate, and the isolation mechanism (5) that need not scribble the plating area to the film substrate shelters from, and isolation mechanism (5) are located the below of transport mechanism (4),
the method is characterized in that: the vapor deposition device is characterized in that a lower tungsten wire assembly (6) and an upper tungsten wire assembly (7) are arranged in the vapor deposition chamber (2), two ends of the lower tungsten wire assembly (6) are connected with a supporting substrate (9) through a bearing piece (8), a supporting mechanism (10) for supporting the lower tungsten wire assembly (6) and the upper tungsten wire assembly (7) is arranged on the supporting substrate (9), the supporting mechanism (10) is connected with a workbench (1), and a rotating mechanism (13) for driving the lower tungsten wire assembly (6) and the upper tungsten wire assembly (7) to rotate is arranged on the workbench (1);
the upper tungsten wire assembly (7) consists of a first upper tungsten wire section (701) and a second upper tungsten wire section (702), wherein long rods (12) are connected to one ends, far away from each other, of the first upper tungsten wire section (701) and the second upper tungsten wire section (702) through the bearing piece (8), the bearing piece (8) has a heat insulation function, an angle adjusting mechanism (11) for driving the upper tungsten wire assembly (7) to rotate through the long rods (12) is arranged on the supporting substrate (9), and a fixing mechanism (14) for fixing the position of the upper tungsten wire assembly (7) through the long rods (12) is arranged on the supporting substrate (9);
a first tungsten filament fin plate (601) is arranged in the lower tungsten filament assembly (6), and second tungsten filament fin plates (703) are arranged on the first upper tungsten filament section (701) and the second upper tungsten filament section (702);
the second tungsten filament fin plate (703) is inserted into the lower tungsten filament assembly (6), and the length of the second tungsten filament fin plate (703) is twice that of the first tungsten filament fin plate (601).
2. The high-efficiency vapor deposition device for metallized films according to claim 1, wherein: the supporting mechanism (10) comprises an annular sliding rail (1001), the annular sliding rail (1001) is connected with the workbench (1) through a supporting rod (1002), and a sliding block (1003) connected with the supporting substrate (9) is connected to the annular sliding rail (1001) in a sliding mode.
3. The high-efficiency vapor deposition device for metallized films according to claim 1, wherein: the angle adjusting mechanism (11) comprises an air cylinder (1101) and a bearing rod (1103), the air cylinder (1101) and the bearing rod (1103) are connected with the supporting substrate (9), and a rack (1102) is connected to the rod part of the air cylinder (1101);
the bearing rod (1103) is connected with a central shaft (1104), a disc (1105) and a first gear (1106) are rotatably sleeved on the central shaft (1104), the disc (1105) is connected with the first gear (1106), the first gear (1106) is meshed with the rack (1102), and the disc (1105) is connected with the long rod (12).
4. A high efficiency vapor deposition apparatus for metallized films according to claim 3, wherein: the rotating mechanism (13) comprises a first half gear (1301) and a second half gear (1302), the first half gear (1301) is connected with a bearing piece (8) on the upper tungsten wire assembly (7), the second half gear (1302) is connected with a bearing piece (8) on the lower tungsten wire assembly (6), and the first half gear (1301) and the second half gear (1302) form a complete gear A;
the workbench (1) is connected with a servo motor (1304), the output end of the servo motor (1304) is connected with a second gear (1303), and the second gear (1303) is meshed with the gear A.
5. The high-efficiency vapor deposition device for metallized films according to claim 1, wherein: the fixing mechanism (14) comprises a mounting cavity (1401) formed in the supporting substrate (9) and a limiting groove (1404) formed in the long rod (12), an armature rod (1402) is rotatably connected to the side wall of the mounting cavity (1401), an arc-shaped rod (1403) is connected to the armature rod (1402), and the movable end of the arc-shaped rod (1403) is inserted into the limiting groove (1404);
the bottom wall of the installation cavity (1401) is connected with a first electromagnet (1405), and the left side wall of the installation cavity (1401) is connected with a second electromagnet (1406).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111118324.1A CN113930729B (en) | 2021-09-22 | 2021-09-22 | High-efficient evaporation device of metallized film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111118324.1A CN113930729B (en) | 2021-09-22 | 2021-09-22 | High-efficient evaporation device of metallized film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113930729A CN113930729A (en) | 2022-01-14 |
| CN113930729B true CN113930729B (en) | 2024-04-05 |
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| CN211814627U (en) * | 2020-03-30 | 2020-10-30 | 刘加彬 | Metallized film evaporator for aluminum-zinc-aluminum capacitor |
| CN212199399U (en) * | 2020-04-18 | 2020-12-22 | 浙江世宏实业有限公司 | Coating film evaporation structure |
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| JP2001131734A (en) * | 1999-11-11 | 2001-05-15 | Allied Material Corp | Tungsten filament for vapor deposition and its deposition method |
| CN101275217A (en) * | 2007-03-26 | 2008-10-01 | 柯斯墨·A株式会社 | Heating apparatus for vacuum evaporation |
| CN103748257A (en) * | 2011-09-09 | 2014-04-23 | Mmt有限公司 | Thermal deposition apparatus |
| KR101322865B1 (en) * | 2012-04-26 | 2013-10-28 | 한국과학기술원 | Evaporation type deposition apparatus and deposition method |
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| CN208167086U (en) * | 2018-03-09 | 2018-11-30 | 刘加彬 | A kind of Tin-zinc-aluminium capacitor metallized film evaporator |
| CN209098788U (en) * | 2018-10-22 | 2019-07-12 | 安徽省宁国市海伟电子有限公司 | Metallized film machining production line system |
| CN209113984U (en) * | 2018-10-22 | 2019-07-16 | 安徽省宁国市海伟电子有限公司 | Evaporation coating device is used in a kind of processing of metallized capacitance diaphragm |
| CN211814627U (en) * | 2020-03-30 | 2020-10-30 | 刘加彬 | Metallized film evaporator for aluminum-zinc-aluminum capacitor |
| CN212199399U (en) * | 2020-04-18 | 2020-12-22 | 浙江世宏实业有限公司 | Coating film evaporation structure |
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| CN113930729A (en) | 2022-01-14 |
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Address after: 244000, Floor 1, Building 15, Science and Technology Innovation Park, East of Tongjingshan Avenue and North of Tongjing East Road, Shizishan High tech Zone, Tongguan District, Tongling City, Anhui Province Patentee after: Tongling Chaoyue Electronics Co.,Ltd. Country or region after: China Address before: 244000 No. 1111, east section of Weiyi Road, Shizishan District, Tongling City, Anhui Province (1 plant and 2 warehouse) Patentee before: TONGLING BEYOND ELECTRONICS Co.,Ltd. Country or region before: China |