CN113921631A - Method for enhancing water vapor barrier property of solar backboard - Google Patents
Method for enhancing water vapor barrier property of solar backboard Download PDFInfo
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- CN113921631A CN113921631A CN202111104757.1A CN202111104757A CN113921631A CN 113921631 A CN113921631 A CN 113921631A CN 202111104757 A CN202111104757 A CN 202111104757A CN 113921631 A CN113921631 A CN 113921631A
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- inorganic oxide
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 89
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 22
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- 238000000151 deposition Methods 0.000 claims abstract description 30
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 27
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 19
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical group Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 3
- DVVGBNZLQNDSPA-UHFFFAOYSA-N 3,6,11-trioxabicyclo[6.2.1]undeca-1(10),8-diene-2,7-dione Chemical compound O=C1OCCOC(=O)C2=CC=C1O2 DVVGBNZLQNDSPA-UHFFFAOYSA-N 0.000 claims description 2
- 229920002292 Nylon 6 Polymers 0.000 claims description 2
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 claims description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 2
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 claims description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
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- 238000010248 power generation Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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- 239000002253 acid Substances 0.000 description 1
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for enhancing the water vapor barrier property of a solar backboard, which comprises the following steps: placing the material used for the support base material layer into atomic layer deposition equipment, depositing inorganic oxide on the support base material layer to obtain an inorganic oxide film upper layer, depositing inorganic oxide on the lower surface of the support base material layer to obtain an inorganic oxide film lower layer, and obtaining the high-water-vapor-barrier solar backboard support base material; then compounding one surface of the high-water-vapor-barrier solar backboard supporting base material with the weather-resistant fluorocarbon thin film layer material by using a binder to obtain the high-water-vapor-barrier solar backboard; taking a commercially available conventional 180 micron thick PET substrate as an example, the water vapor transmission rate is 1.746g/m224h, when the aluminum oxide film with the thickness of 30 nanometers on the two surfaces is deposited, the water vapor transmission rate of the obtained solar backboard is reduced to 0.005g/m2*24h。
Description
Technical Field
The invention belongs to the technical field of photovoltaic material modification, and particularly relates to a method for enhancing water vapor barrier property of a solar backboard.
Background
Photovoltaic power generation is a novel pollution-free green energy source and is a powerful means for replacing partial thermal power generation to realize carbon neutralization. In photovoltaic power generation applications, the smallest basic unit is a solar cell module. The solar backboard is a packaging material located on the back of the battery pack, and the solar backboard needs to protect the battery pack in an outdoor environment against the erosion of environmental factors such as light, humidity and heat to an ethylene-vinyl acetate copolymer (EVA) adhesive film and a battery piece, so that the solar backboard plays a role in protection and support and ensures the normal work of the battery pack.
A single material generally fails to meet such a combination of performance requirements. Therefore, the common solar back panel is prepared from a weather-resistant fluorine film, a supporting layer substrate film and a bonding layer coating, and the layers are adhered by adopting an adhesive. Polyethylene terephthalate (PET) is the most common backing substrate, and under long-term outdoor high-temperature and high-humidity conditions, PET is easily degraded into acid and alcohol, so that the aging of PET is caused; meanwhile, PET has high water vapor transmission rate and poor barrier property to high-humidity environment. The water vapor can permeate into the back plate, so that the EVA is poor in cohesiveness and separated from the back plate, the cell is oxidized, and the power generation efficiency and stability of the assembly are affected. Meanwhile, the traditional back plate with the multilayer structure has the disadvantages of complicated manufacturing process, more working procedures, high manufacturing cost and low production efficiency. The organic solvent used in the processing process also pollutes the environment and increases the energy consumption of treatment.
Disclosure of Invention
The invention aims to provide a method for enhancing the water vapor barrier property of a solar backboard, and the solar backboard prepared by the method has the characteristics of low water vapor transmission rate, simple process and strong stability.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the invention provides a method for enhancing the water vapor barrier property of a solar backboard, which comprises the following steps:
placing the material used for the support base material layer into atomic layer deposition equipment, depositing inorganic oxide on the support base material layer to obtain an inorganic oxide film upper layer, depositing inorganic oxide on the lower surface of the support base material layer to obtain an inorganic oxide film lower layer, and obtaining the high-water-vapor-barrier solar backboard support base material; then compounding one surface of the high-water-vapor-barrier solar backboard supporting base material with the weather-resistant fluorocarbon thin film layer material by using a binder to obtain the high-water-vapor-barrier solar backboard;
the solar backboard is structurally characterized by comprising an inorganic oxide film upper layer, a supporting base material layer, an inorganic oxide film lower layer, a binder layer and a weather-resistant fluorocarbon film layer from top to bottom in sequence;
the thickness of the upper layer of the inorganic oxide film is 10-100 nanometers; preferably 20-30 nm;
the material of the upper layer of the inorganic oxide film is selected from one of aluminum oxide, silicon oxide, titanium oxide, zinc oxide, zirconium oxide and hafnium oxide; preferably alumina;
the material of the supporting base material layer is selected from one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone resin (PES) and poly (ethylene 2, 5-furandicarboxylate) (PEF);
the thickness of the lower layer of the inorganic oxide film is 10-100 nanometers; preferably 20-30 nm;
the material of the lower layer of the inorganic oxide film is selected from one of aluminum oxide, silicon oxide, titanium oxide, zinc oxide, zirconium oxide and hafnium oxide; preferably alumina;
the material of the adhesive layer is a bi-component polyurethane composite material selected from polyester type or polyether type bi-component polyurethane composite materials.
The thickness of the adhesive layer is 8-15 microns, and preferably 10 microns.
The weather-resistant fluorocarbon film layer is made of one of polyvinyl fluoride (PVF), polyvinylidene fluoride, tetrafluoroethylene-ethylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer, modified polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyhexamethylene adipamide, polycaprolactam or polycarbonate.
The thickness of the weather-resistant fluorocarbon thin film layer is 5-60 micrometers, and preferably 20-30 micrometers.
The method for enhancing the water vapor barrier property of the solar backboard specifically comprises the following steps:
firstly, putting a material for supporting a substrate layer into atomic layer deposition equipment;
secondly, cleaning the surface of the material for supporting the substrate layer, fixing the cleaned material on a clamp, putting the clamp into a cavity, vacuumizing the cavity, and waiting for the temperature to be stabilized to the set cavity temperature;
thirdly, depositing a double-sided inorganic oxide film, and stopping reaction to obtain a support substrate layer with high water vapor barrier property;
and fourthly, bonding and compounding the support base material layer with the high water vapor barrier property and the weather-resistant fluorocarbon film layer material obtained in the third step by using a binder to obtain the solar backboard with the high water vapor barrier property.
The atomic layer deposition equipment can accurately control the growth at the atomic layer level, has the characteristics of high depth-to-depth ratio deposition, self-limiting growth and the like, and can achieve very high water vapor barrier protection effect by depositing a very thin barrier material on the surface of the support substrate layer. Therefore, no specific requirement is required for the thickness of the film of the support substrate layer, and on the basis of meeting the strength of the support effect, the thickness of the support substrate layer is 50-300 microns, preferably 120-250 microns.
The atomic layer deposition device is selected from the group consisting of a thermal atomic layer deposition device (T-ALD), a plasma-enhanced atomic layer deposition device (PE-ALD), an ultraviolet-enhanced atomic layer deposition device (UV-ALD), preferably a T-ALD type device. When the T-ALD type equipment is used for depositing inorganic oxide thin film materials, one complete cycle reaction comprises two half reactions, and the film forming process is a process that the precursor A and the precursor B continuously generate adsorption substitution reaction on the surface of the substrate. Taking an alumina material as an example: first, a substrate material is placed in a chamber and heated to a suitable deposition temperature; carrying the aluminum-containing precursor source into the chamber by using inert gas such as argon as carrier gas, wherein aluminum precursor molecules can adsorb a layer of aluminum-containing precursor molecules on reactive active sites on the surface of the substrate, and when the surface active sites are adsorbed and saturated, redundant aluminum precursors are easily pumped away by a vacuum pump due to the everywhere adsorption to complete a first half reaction; and then, argon is used as a carrier gas to carry and introduce the oxidizing precursor source gas into the chamber, oxidizing precursor molecules replace non-aluminum groups on the previously deposited aluminum precursor molecule layer, forming aluminum-oxygen bonds and simultaneously forming new reactive active sites, and finishing the second half reaction. A complete cycle of atomic layer deposition results in the deposition of an alumina film one monolayer thick.
The working temperature of the atomic layer deposition equipment chamber is 80-150 ℃, and preferably 120 ℃.
When the atomic layer deposition equipment is used for depositing materials, an aluminum precursor source, an oxygen precursor source, a titanium precursor source and a zinc precursor source are required to be used; the aluminum precursor source is selected from Trimethylaluminum (TMA), aluminum trichloride (AlCl)3) Triethylaluminum (TEA), dimethylaluminum chloride, aluminum ethoxide, aluminum isopropoxide; the oxygen precursor source is selected from deionized water (H)2O), ozone (O)3) Oxygen (O)2) (ii) a The titanium precursor source is titanium tetrachloride; the zinc precursor source is diethyl zinc.
The carrier gas species used in the atomic layer deposition apparatus to carry the precursor molecules into the chamber is selected from nitrogen, argon, preferably argon.
The flow rate of the carrier gas material was set at a flow rate value of 200 standard liters per minute (sccm).
Due to the adoption of the technical scheme, the invention has the following advantages and beneficial effects:
the most accepted and preferred photovoltaic solar cell back sheet structure among the existing solar cell back sheets by cell component manufacturers is the TPT (Tedlar | PET | Tedlar) type solar cell back sheet. The TPT type solar cell back plate is structurally characterized in that PET is used as a base film, and a Tedlar film is compounded, wherein the main component of the Tedlar film is polyvinyl fluoride (PVF). In the aspect of water vapor barrier property, the water vapor barrier property of the PVF fluorine film has little contribution to the whole water vapor barrier capability of the back plate, and the water of the back plateThe vapor barrier is mainly provided by PET. For example, with a 180 micron thick PET substrate, PET backsheet without surface modification typically has a water vapor transmission rate greater than 1.5 g/(m)224 h). The reaction of atomic layer deposition is based on the principle of active site self-limiting growth, when a backboard substrate is placed in a vacuum chamber for atomic layer deposition, source gas molecules can be adsorbed on the surface of the substrate and at pinhole defects, and subsequent atomic layer level deposition is performed. The compact inorganic oxide film has very strong barrier property to water vapor, can greatly reduce the transmittance of the water vapor, protects the EVA adhesive film and the solar cell piece from being corroded by the water vapor, and improves the protective performance of the solar backboard. According to the invention, the dense inorganic oxide film is grown on the surface of the high-molecular polymer backboard substrate by using the atomic layer deposition method to enhance the water vapor barrier property of the backboard substrate, and after the 30-nanometer alumina film is deposited on the two sides of the commercially-available conventional 180-micrometer-thick PET substrate, the water vapor transmission rate can be rapidly reduced to 0.005 g/(m) g224h), the problems of degradation of the conventional solar backboard substrate in a high-humidity environment and backboard aging and failure caused by high water vapor transmission rate are solved.
In the aspect of the manufacturing process of the traditional TPT back plate, the two surfaces of the PET substrate need to be respectively subjected to surface treatment, glue detection, coating, drying, compounding and curing, and the process is complex and has high cost. Taking a PET substrate with the thickness of 250 microns, a weather-resistant fluorocarbon protective layer with the thickness of 30 microns and a binder layer with the thickness of 10 microns as an example, the thickness of the traditional composite TPT structural back plate is about 320 +/-10 microns, and the weight of the traditional composite TPT structural back plate is about 450 +/-10 g/m2The weight of the photovoltaic module is increased. The inorganic oxide film used for enhancing the water resistance is compact and has the thickness of only dozens of nanometers, and can be integrally formed on two sides in the preparation process, so that the mechanical property and the supporting effect of the backboard substrate are not influenced. Meanwhile, when the solar back plate is prepared, the process of coating, drying, compounding and curing only needs to be carried out on the surface needing to be contacted with the air and the weather-resistant fluorocarbon film layer by using a binder. The method for enhancing the high water vapor barrier property of the solar back panel can reduce the thickness of the solar back panel to about 280 +/-5 microns and the weight of the solar back panel to about 420 +/-5 g/m2Greatly simplifies the solar backboardThe structure of (2) and reduces the process complexity and cost of the solar back panel.
Drawings
Fig. 1 is a schematic structural diagram of a solar back sheet having a high water vapor barrier property according to embodiment 1 of the present invention, where 1 is an inorganic oxide film upper layer, 2 is a support substrate layer, 3 is an inorganic oxide film lower layer, 4 is a binder layer, and 5 is a weather-resistant fluorocarbon film layer.
Fig. 2 is a schematic structural view of a conventional solar cell back sheet.
FIG. 3 is a graph showing the water permeability variation of two PET films with different thickness deposited on the surface.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below in connection with preferred embodiments. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
Example 1
A method of enhancing the water vapor barrier of a solar backsheet comprising the steps of:
firstly, putting a PET substrate with the thickness of 180 microns into T-ALD deposition equipment, adopting trimethylaluminum as an aluminum precursor source and deionized water as an oxidizing precursor source for deposition of an inorganic aluminum oxide water-resistant film, and keeping the temperature of the precursor source at 25 ℃. The heating temperature of the deposition chamber was set to 120 ℃. The flow rate of the argon carrier gas carrying the precursor source into the chamber was set to 200 standard liters per minute (sccm).
And secondly, cleaning the surface of the PET substrate, fixing the PET substrate on a clamp, putting the PET substrate into a cavity, vacuumizing the cavity, and waiting for the temperature to be stabilized to the set cavity temperature.
And thirdly, depositing an alumina film with the thickness of 30 nanometers on both sides, and stopping the reaction to obtain the PET substrate with high water vapor barrier property.
And fourthly, bonding and compounding the PET substrate with the high water vapor barrier property and the PVF weather-resistant fluorocarbon thin film layer with the weather resistance of 30 microns by using the polyester type binder with the thickness of 10 microns to obtain the solar back panel with the high water vapor barrier property.
Taking a PET substrate with the thickness of 180 microns as an example, 1.746 g/(m) of the traditional TPT composite solar backboard224h), the water vapor transmission rate of the novel solar backboard manufactured by taking PET with 30 nanometer thick aluminum oxide layers deposited on two sides as a base material can be reduced to 0.005 g/(m)2*24h)。
The structure of the prepared solar back panel is shown in fig. 1, and fig. 1 is a schematic structural view of the solar back panel with high water vapor barrier property in embodiment 1 of the present invention, and the solar back panel sequentially includes, from top to bottom, an inorganic oxide film upper layer 1, a support substrate layer 2, an inorganic oxide film lower layer 3, a binder layer 4, and a weather-resistant fluorocarbon film layer 5. The thickness of the inorganic oxide film upper layer 1 is 30 nanometers, and the material is aluminum oxide; the thickness of the support substrate layer 2 is 180 micrometers, and the material is PET; the thickness of the lower layer 3 of the inorganic oxide film is 30 nanometers, and the material is aluminum oxide; the thickness of the adhesive layer 4 is 10 microns, and the material is a polyester type bi-component polyurethane composite material; the thickness of the weather-resistant fluorocarbon film layer 5 is 30 micrometers, and the material is PVF.
Example 2
A method of enhancing the water vapor barrier of a solar backsheet comprising the steps of:
firstly, putting a PET substrate with the thickness of 250 microns into T-ALD deposition equipment, adopting trimethylaluminum as an aluminum precursor source and deionized water as an oxidizing precursor source for deposition of an inorganic aluminum oxide water-resistant film, and keeping the temperature of the precursor source at 25 ℃. The heating temperature of the deposition chamber was set to 120 ℃. The flow rate of the argon carrier gas carrying the precursor source into the chamber was set to 200 standard liters per minute (sccm).
And secondly, cleaning the surface of the PET substrate, fixing the PET substrate on a clamp, putting the PET substrate into a cavity, vacuumizing the cavity, and waiting for the temperature to be stabilized to the set cavity temperature.
And thirdly, depositing an alumina film with the thickness of 20 nanometers on both sides, and stopping the reaction to obtain the PET substrate with high water vapor barrier property.
And fourthly, bonding and compounding the PET substrate with the high water vapor barrier property and the weather-resistant fluorocarbon film layer with the weather resistance of 20 microns by using a bonding agent with the thickness of 10 microns to obtain the solar backboard with the high water vapor barrier property.
Taking a PET substrate with the thickness of 250 microns as an example, the TPT composite solar back panel is 1.233 g/(m)224h), the water vapor transmission rate of the novel solar back plate manufactured by taking PET with 20 nanometer thick aluminum oxide layers deposited on two sides as a base material can be reduced to 0.043 g/(m)2*24h)。
The solar backboard is characterized by sequentially comprising an inorganic oxide film upper layer, a supporting substrate layer, an inorganic oxide film lower layer, a binder layer and a weather-resistant fluorocarbon film layer from top to bottom. The thickness of the upper layer of the inorganic oxide film is 20 nanometers, and the material is aluminum oxide; the thickness of the support base material layer is 250 microns, and the material is PET; the thickness of the lower layer of the inorganic oxide film is 20 nanometers, and the material is aluminum oxide; the thickness of the adhesive layer is 10 microns, and the material is a polyester type bi-component polyurethane composite material; the thickness of the weather-resistant fluorocarbon film layer is 20 micrometers, and the material is PVF.
Example 3
A method of enhancing the water vapor barrier of a solar backsheet comprising the steps of:
firstly, putting a PET substrate with the thickness of 180 microns into T-ALD deposition equipment, and adopting trimethylaluminum as an aluminum precursor source, titanium tetrachloride as a titanium precursor source, deionized water as an oxidizing precursor source and keeping the temperature of the precursor source at 25 ℃ for the deposition of inorganic aluminum oxide and titanium oxide laminated water-resistant films. The heating temperature of the deposition chamber was set to 120 ℃. The flow rate of the argon carrier gas chosen to carry the precursor source into the chamber was set at 200 standard liters per minute (sccm).
And secondly, cleaning the surface of the PET substrate, fixing the PET substrate on a clamp, putting the PET substrate into a cavity, vacuumizing the cavity, and waiting for the temperature to be stabilized to the set cavity temperature.
And thirdly, according to a set procedure 1, namely, alternately introducing a trimethyl aluminum precursor source and a water precursor source into the chamber, and executing a set cycle number to deposit the PET double-sided 10-nanometer-thickness alumina film. After the procedure 1 is completed, the reaction of atomic layer deposition of alumina is stopped, the apparatus performs self-purging, and the aluminum-containing precursor source remaining in the chamber is cleaned. And then, according to a set program 2, namely, alternately introducing a titanium tetrachloride precursor source and a water precursor source into the chamber, executing a set cycle number to deposit a 20-nanometer double-sided titanium oxide film on the surface of the PET with the aluminum oxide film deposited on the double sides, and obtaining the PET substrate with high water vapor barrier property after the reaction is stopped.
And fourthly, bonding and compounding the PET substrate with the high water vapor barrier property and the PVF weather-resistant fluorocarbon thin film layer with the weather resistance of 30 microns by using the polyester type binder with the thickness of 10 microns to obtain the solar back panel with the high water vapor barrier property.
Taking a PET substrate with the thickness of 180 microns as an example, 1.746 g/(m) of the traditional TPT composite solar backboard224h), the water vapor transmission rate of the novel solar back plate with the back plate base material of the laminated film PET with 10 nanometer aluminum oxide and 20 nanometer titanium oxide deposited on both sides can be reduced to 0.012 g/(m)2*24h)。
The solar backboard is characterized by sequentially comprising an inorganic oxide film upper layer, a supporting substrate layer, an inorganic oxide film lower layer, a binder layer and a weather-resistant fluorocarbon film layer from top to bottom. The composition of the upper layer of the inorganic oxide film is 10 nanometers of aluminum oxide and 20 nanometers of zinc oxide; the thickness of the support substrate layer is 180 micrometers, and the support substrate layer is made of PET; the composition of the lower layer of the inorganic oxide film is 10 nanometers of aluminum oxide and 20 nanometers of zinc oxide; the thickness of the adhesive layer is 10 microns, and the material is a polyester type bi-component polyurethane composite material; the thickness of the weather-resistant fluorocarbon film layer is 30 micrometers, and the material is PVF.
Example 4
A method of enhancing the water vapor barrier of a solar backsheet comprising the steps of:
firstly, putting a PET substrate with the thickness of 250 microns into T-ALD deposition equipment, and adopting diethyl zinc as a zinc precursor source and deionized water as an oxidizing precursor source for deposition of an inorganic zinc oxide water-resistant film, wherein the precursor source is kept at the temperature of 25 ℃. The heating temperature of the deposition chamber was set to 120 ℃. The flow rate of the argon carrier gas chosen to carry the precursor source into the chamber was set at 200 standard liters per minute (sccm).
And secondly, cleaning the surface of the PET substrate, fixing the PET substrate on a clamp, putting the PET substrate into a cavity, vacuumizing the cavity, and waiting for the temperature to be stabilized to the set cavity temperature.
And thirdly, depositing a zinc oxide film with the thickness of 20 nanometers on both sides, and stopping the reaction to obtain the PET substrate with high water vapor barrier property.
And fourthly, bonding and compounding the PET substrate with the high water vapor barrier property and the PVF weather-resistant fluorocarbon thin film layer with the weather resistance of 30 microns by using the polyester type binder with the thickness of 10 microns to obtain the solar back panel with the high water vapor barrier property.
Taking a PET substrate with the thickness of 250 microns as an example, the TPT composite solar back panel is 1.233 g/(m)224h), the water vapor transmission rate of the novel solar backboard manufactured by taking PET with 20 nanometer thick zinc oxide layers deposited on two sides as the backboard substrate can be reduced to 0.045 g/(m)2*24h)。
The solar backboard is characterized by sequentially comprising an inorganic oxide film upper layer, a supporting substrate layer, an inorganic oxide film lower layer, a binder layer and a weather-resistant fluorocarbon film layer from top to bottom. The upper layer of the inorganic oxide film is a zinc oxide film with the thickness of 20 nanometers; the thickness of the support base material layer is 250 microns, and the material is PET; the lower layer of the inorganic oxide film is a zinc oxide film with the thickness of 20 nanometers; the thickness of the adhesive layer is 10 microns, and the material is a polyester type bi-component polyurethane composite material; the thickness of the weather-resistant fluorocarbon film layer is 30 micrometers, and the material is PVF.
Comparative example 1
The PET substrate used in the embodiment of the invention is a special PV back plate polyester film for solar energy produced by Yuxing purchased as a back plate substrate, the model is CY15RGU, and the thicknesses are respectively 180 micrometers and 250 micrometers. The water vapor transmission rates of commercially available PET substrates and modified substrates were tested according to GB/T21529-. The testing equipment uses a C330H type water vapor transmission rate testing system produced by the mechanical and electrical company of the Jinnan Languang, and the product is designed and manufactured according to the ISO1506-3 standard based on the testing principle of an electrolytic method moisture analysis sensor.
The water vapor transmission rate of commercially available PET substrates 180 microns and 250 microns thick, respectively, was tested for water vapor barrier properties and found to be 1.746 g/(m)224h) and 1.233 g/(m)224 h). Based on the two thicknesses of PET substrate, using an atomic layer deposition method to respectively deposit alumina films with the thickness of 10 nanometers, 20 nanometers and 30 nanometers on the two sides of the surface of the PET substrate, so as to obtain the PET substrate with high water vapor barrier property, and fig. 3 is a schematic diagram of the change of the water permeability of the alumina films with different thicknesses deposited on the surfaces of the two thicknesses of PET. After the PET substrate with the thickness of 180 micrometers is covered with the alumina film deposited by the 10 nanometer atomic layer on the two sides, the water vapor barrier rate is 0.481 g/(m)224 h); after covering a 20-nanometer atomic layer deposited alumina film, the water vapor barrier rate is 0.124 g/(m)224 h); after covering a 30-nanometer atomic layer deposited alumina film, the water vapor barrier rate is 0.005 g/(m)224 h). After the PET substrate with the thickness of 250 micrometers is covered with the alumina film deposited by the 10 nanometer atomic layer on the two sides, the water vapor barrier rate is 0.413 g/(m)224 h); after covering a 20-nanometer atomic layer deposited alumina film, the water vapor barrier rate is 0.043 g/(m)224 h); after covering a 30-nanometer atomic layer deposited alumina film, the water vapor barrier rate is 0.003 g/(m)224 h). It can be seen that the water vapor barrier property of the PET surface is greatly improved after the treatment of the atomic layer deposition alumina film.
In terms of complexity of structure and manufacturing process, the structure of the conventional TPT type solar back sheet is shown in fig. 2, and fig. 2 is a schematic structural view of the conventional solar cell back sheet. L1 refers to the PET substrate layer, L2 refers to the adhesive coating, and L3 refers to the weatherable PVF layer. When the solar backboard is prepared, the two sides of the PET substrate need to be respectively subjected to surface treatment, glue detection, coating, drying, compounding and curing, and the process is complex and has high cost. But are commonly commercially available in the present inventionThe PET substrate is placed in the cavity only in the atomic layer deposition equipment, and the aluminum oxide film with the set thickness can be deposited on two sides at one time, so that the PET substrate with high water vapor barrier performance is obtained. Subsequently, when the solar back panel is prepared, the solar cell back panel with high water vapor barrier property can be obtained only by using a single surface and the material of the weather-resistant fluorocarbon thin film layer to perform glue detection, coating, drying, compounding and curing processes by using a binder, the water vapor barrier property can be improved, the light weight of the back panel can be realized, and the complexity and the cost of process flow are greatly saved. Taking a PET substrate layer of about 250 microns in thickness as an example, the fluorine film is about 30 microns in thickness and the adhesive layer is about 10 microns in thickness. The thickness of the back plate of the traditional TPT structure is about 320 +/-10 microns, and the weight is about 450 +/-10 g/m2The thickness of the back plate of the invention is about 280 +/-5 microns, and the weight is about 420 +/-5 g/m2。
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method of enhancing the water vapor barrier properties of a solar backsheet, comprising the steps of:
placing the material used for the support base material layer into atomic layer deposition equipment, depositing inorganic oxide on the support base material layer to obtain an inorganic oxide film upper layer, depositing inorganic oxide on the lower surface of the support base material layer to obtain an inorganic oxide film lower layer, and obtaining the high-water-vapor-barrier solar backboard support base material; then compounding one surface of the high-water-vapor-barrier solar backboard supporting base material with the weather-resistant fluorocarbon thin film layer material by using a binder to obtain the high-water-vapor-barrier solar backboard;
the solar backboard is structurally characterized by comprising an inorganic oxide film upper layer, a supporting base material layer, an inorganic oxide film lower layer, a binder layer and a weather-resistant fluorocarbon film layer from top to bottom in sequence;
the material of the upper layer of the inorganic oxide film is selected from one of aluminum oxide, silicon oxide, titanium oxide, zinc oxide, zirconium oxide and hafnium oxide;
the material of the supporting base material layer is selected from one of polyethylene terephthalate, polyethylene naphthalate, polyether sulfone resin and poly (ethylene 2, 5-furandicarboxylate);
the material of the lower layer of the inorganic oxide film is selected from one of aluminum oxide, silicon oxide, titanium oxide, zinc oxide, zirconium oxide and hafnium oxide;
the adhesive layer is made of a double-component polyurethane composite material;
the weather-resistant fluorocarbon film layer is made of one of polyvinyl fluoride, polyvinylidene fluoride, tetrafluoroethylene-ethylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer, modified polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyhexamethylene adipamide, polycaprolactam or polycarbonate.
2. The method for enhancing the water vapor barrier property of the solar back sheet according to claim 1, wherein the thickness of the inorganic oxide thin film upper layer is 10 to 100 nm.
3. The method for enhancing the water vapor barrier property of the solar back sheet according to claim 1, wherein the thickness of the inorganic oxide film lower layer is 10 to 100 nm.
4. The method of enhancing the water vapor barrier property of a solar back sheet according to claim 1, wherein the thickness of the adhesive layer is 8 to 15 μm.
5. The method for enhancing the water vapor barrier property of the solar back sheet according to claim 1, wherein the thickness of the weather-resistant fluorocarbon thin film layer is 5-60 μm.
6. The method of enhancing water vapor barrier properties of a solar backsheet according to claim 1 wherein said atomic layer deposition device is selected from the group consisting of a thermal atomic layer deposition device, a plasma enhanced atomic layer deposition device, and a uv enhanced atomic layer deposition device.
7. The method for enhancing the water vapor barrier property of the solar backboard according to claim 1, wherein the working temperature of the atomic layer deposition equipment chamber is 80-150 ℃.
8. The method of claim 1, wherein the atomic layer deposition equipment uses aluminum precursor source, oxygen precursor source, titanium precursor source, zinc precursor source for depositing material.
9. The method of enhancing the water vapor barrier of a solar back sheet of claim 8, wherein the aluminum precursor source is selected from the group consisting of trimethylaluminum, aluminum trichloride, triethylaluminum, dimethylaluminum chloride, aluminum ethoxide, aluminum isopropoxide; the oxygen precursor source is selected from deionized water, ozone and oxygen; the titanium precursor source is titanium tetrachloride; the zinc precursor source is diethyl zinc.
10. A method for enhancing the water vapor barrier of a solar back sheet according to claim 1, wherein the carrier gas species used in the atomic layer deposition apparatus for carrying the precursor molecules into the chamber is selected from nitrogen, argon;
the flow rate of the carrier gas material was set at a flow rate of 200 standard liters per minute.
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| CN115274900A (en) * | 2022-07-18 | 2022-11-01 | 江苏中来新材科技有限公司 | Quantum dot photovoltaic backboard and double-sided photovoltaic assembly |
| CN115274900B (en) * | 2022-07-18 | 2023-08-11 | 江苏中来新材科技有限公司 | Quantum dot photovoltaic backboard and double-sided photovoltaic module |
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