KR101200766B1 - Dye-sensitized solar cell including blocking layer - Google Patents
Dye-sensitized solar cell including blocking layer Download PDFInfo
- Publication number
- KR101200766B1 KR101200766B1 KR20100098442A KR20100098442A KR101200766B1 KR 101200766 B1 KR101200766 B1 KR 101200766B1 KR 20100098442 A KR20100098442 A KR 20100098442A KR 20100098442 A KR20100098442 A KR 20100098442A KR 101200766 B1 KR101200766 B1 KR 101200766B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- blocking layer
- transparent conductive
- conductive film
- dye
- Prior art date
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
The present invention relates to a dye-sensitized solar cell including a blocking layer, comprising: a first substrate 110 and a second substrate 180 formed of glass or plastic; A first transparent conductive film 120 and a second transparent conductive film 170 formed of ITO or FTO on the first substrate 110 and the second substrate 180; A blocking layer 130 formed by depositing magnesium oxide (MgO) on the first transparent conductive film 120 with an e-beam evaporator to a thickness of 500 kV to 5,000 kV and crystallizing it; A porous film 140 formed of titanium (Ti) oxide or zirconium (Zr) oxide on the blocking layer 130; A conductive layer 160 formed of any one material of carbon black, carbon nanotubes, or platinum on the second transparent conductive film 170; And an electrolyte layer 150 sealed between the first substrate 110 and the second substrate 180 by a partition and made of an iodine-based redox liquid electrolyte.
In the dye-sensitized solar cell including the blocking layer according to the present invention, magnesium oxide is deposited and crystallized using an e-beam evaporator to form a blocking layer having a desired thickness and a uniform surface with a first transparent conductive film and a porous layer. By forming between the films, the electron recombination phenomenon in which electrons injected into the semiconductor compound are recombined by the electrolyte can be prevented, and the electrode corrosion phenomenon by the electrolyte can be prevented to improve the total light conversion efficiency.
Description
The present invention relates to a dye-sensitized solar cell, and more particularly to a dye-sensitized solar cell comprising a blocking layer.
Amid global consensus on the climate change crisis, the demand for renewable energy using clean nature such as the sun, wind, and water instead of existing fossil fuel-based energy is increasing. In particular, technology development and commercialization around the world of solar energy have been developing in recent years, and if 100% of the solar energy delivered to the earth can be used for one hour without loss, it can be used by humankind for one year. The sun has enormous energy that is enough to generate electricity. Solar cells that convert sunlight into electricity have been mostly made of silicon semiconductors, but recently, interest in 'dye-sensitized solar cells' that use sunlight to convert sunlight into electricity without using silicon at all is increasing. have.
Although dye-sensitized solar cells are only half the efficiency of converting sunlight into electricity, they have the advantage of lowering manufacturing costs to less than one-fifth, and operate regardless of seasonal changes. It is attracting attention because it can be done. Currently, the efficiency of dye-sensitized solar cells is known to reach about 11%. In the future, the battery has a commercialization efficiency of 20% and has various applications, and thus intensive research by many researchers and companies around the world is being conducted.
Dye-sensitized solar cells were first introduced in 1991 by Michael Gratzel, a professor of chemistry at Lausanne Institute of Technology (EPFL) in Switzerland. Due to its simple structure, dye-sensitized solar cells are easier to manufacture than conventional silicon solar cells. Typically, crystalline silicon solar cells cost around $ 2.5 per watt, and dye-sensitized solar cells can be manufactured for less than $ 1 per watt, industry experts say. However, in terms of efficiency, how much solar energy is converted into electricity, commercial crystalline silicon solar cells are about 14-17%, while commercial dye-sensitized solar cells are still only 4-7%.
The working principle of a conventional dye-sensitized solar cell is as follows.
The dyes excited by sunlight inject electrons into the conduction band of nanoparticle titanium dioxide. The injected electrons pass through the nanoparticle titanium dioxide to reach the conductive substrate and are transferred to the external circuit. Here, the energy conversion efficiency of electrons transferred from the nanoparticle titanium dioxide to the conductive substrate is greatly influenced by the contact area between the titanium dioxide nanoparticles constituting the semiconductor substrate and the conductive substrate. That is, some of the electrons transferred from the nanoparticle titanium dioxide to the conductive substrate disappear back into the electrolyte through the portion of the conductive substrate that is not in contact with the nanoparticle titanium dioxide and is exposed to the electrolyte solution.
However, in the conventional dye-sensitized solar cell, since the particle shape of the titanium dioxide constituting the semiconductor electrode has a spherical shape, an elliptical shape, or a similar particle shape, the contact area between the titanium dioxide and the conductive substrate is secured. There is a limit. As a result, there is a limit in securing desired energy conversion efficiency due to electron loss through the surface exposed to the electrolyte in the conductive substrate of the semiconductor electrode.
Accordingly, the present invention has been made to solve the above problems, and includes a blocking layer for improving the light conversion efficiency by depositing and crystallizing magnesium oxide using an E-BEAM Evaporater equipment. The purpose is to provide a dye-sensitized solar cell.
Dye-sensitized solar cell comprising a blocking layer according to the present invention for achieving the above object, the first substrate and the second substrate formed of glass or plastic; A first transparent conductive film and a second transparent conductive film formed of ITO or FTO on the first substrate and the second substrate; A barrier layer formed by depositing magnesium oxide (MgO) on the first transparent conductive film with an e-beam evaporator to an thickness of 500 kV to 5,000 kV and crystallizing it; A porous film formed of titanium (Ti) oxide or zirconium (Zr) oxide on the blocking layer; A conductive layer formed of any one material of carbon black, carbon nanotubes, or platinum on the second transparent conductive film; And an electrolyte layer sealed between the first substrate and the second substrate by a partition and made of an iodine-based redox liquid electrolyte.
delete
delete
As described above, the dye-sensitized solar cell including the blocking layer according to the present invention is deposited and crystallized magnesium oxide using an E-BEAM Evaporater, the desired thickness and uniform surface By forming a blocking layer between the first transparent conductive film and the porous film, it is possible to prevent the electron recombination phenomenon that the electrons injected into the semiconductor compound are recombined by the electrolyte, and to prevent the electrode corrosion phenomenon caused by the electrolyte, the total light conversion efficiency There is an advantage that can be improved.
1 is a view showing an embodiment of a dye-sensitized solar cell including a blocking layer according to the present invention
FIG. 2 is a view showing an embodiment of an E-BEAM Evaporater device for forming a blocking layer of a dye-sensitized solar cell including a blocking layer according to the present invention.
Figure 3 is a surface and side view of the FTO deposited using CVD in a dye-sensitized solar cell according to the prior art
Figure 4 is a surface and side photograph of the barrier layer deposited using the E-BEAM Evaporater equipment of a dye-sensitized solar cell including a barrier layer according to the present invention
5 is an AFM photograph of FIGS. 3 and 4
Figure 6 is a view showing the transmittance comparison analysis of Figures 3 and 4
Figure 7 shows the difference in efficiency with or without the barrier layer according to the present invention
Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings.
Hereinafter, a dye-sensitized solar cell including a blocking layer according to the present invention will be described in detail with reference to the accompanying drawings.
1 is a view showing an embodiment of a dye-sensitized solar cell including a blocking layer according to the present invention.
As shown in FIG. 1, a dye-sensitized solar cell including a blocking layer includes a
The
The
The first transparent
The
The
The
The
FIG. 2 is a view showing an embodiment of an E-BEAM Evaporater device for forming a blocking layer of a dye-sensitized solar cell including a blocking layer according to the present invention.
As shown in FIG. 2, the
3 is a side view and a photograph of the surface of the FTO deposited using CVD in the dye-sensitized solar cell according to the prior art, Figure 4 is a two-beam evaporator (E) of the dye-sensitized solar cell comprising a blocking layer according to the present invention -BAM Evaporater) and the barrier layer deposited using the equipment is a picture of the side, Figure 5 is an AFM picture of Figures 3 and 4, Figure 6 is a view showing the comparative analysis data of the transmission of Figures 3 and 4, 7 is a view showing the difference in efficiency with or without the barrier layer according to the present invention.
Such a dye-sensitized solar cell including a blocking layer according to the present invention will be described in detail with reference to the accompanying drawings.
As shown in FIG. 1, the
Hereinafter, the dye-sensitized solar cell is formed by sealing the
Referring to the dye-sensitized solar cell formed with the blocking layer according to the present invention formed as described above are as follows.
First, sunlight passing through the
In this case, light may also be absorbed in the dye molecule layers respectively adsorbed on the upper surface of the
Hereinafter, preferred embodiments of the present invention will be described. Herein, the following examples are merely illustrated to aid the understanding of the present invention, but the contents of the present invention are not limited by the following examples.
(Example)
In order to form a blocking layer of a dye-sensitized solar cell, a magnesium oxide (MgO) thin film is coated on a glass substrate with an MgO thin film using an e-beam evaporator. It is deposited in the range of 500 kHz to 5000 kHz on (1000 Å to 6000 Å). The substrate temperature is 300 ° C. to realize the crystalline thin film, the base vacuum is about 3 × 10 -6 Torr, and the working pressure is 1,6 × 10 -4 Torr )to be. The substrate is fixed at a temperature of 300 ° C. while being rotated, the deposition rate is in the range of 5 s / sec, and the atmosphere is an oxygen partial pressure.
Experimental conditions as described above are as follows.
Backgroundpressure: 3 * 10 -6 Torr
Operating pressure: 1.6 * 10 -4 Torr
MgSource: 99.99%
MgsourceDepositionrate: 0.5Å / sec
Oxygengasratio: 2sccm
Substratetemperature: 300 ℃
k-CellImpingingAngle: 35 °
Coolingcondition: Water
Ionbeampowersupplycondition Plasmadischargecurrent: 200㎃ ~ 1,000㎃
In general, in the case of the oxide film, not only the internal crystallinity and internal structure of the thin film but also the transmittance and efficiency are influenced by the characteristics of the surface of the magnesium oxide (MgO) thin film, which is a blocking layer. The conventional FTO thin film is deposited by the CVD method, and as shown in Fig. 3, adversely affect the surface roughness. Therefore, by depositing a magnesium oxide (MgO) thin film on a transparent conductive oxide (TCO) substrate, as shown in Figure 4, it contributes to the surface roughness control and the improvement of transmittance. In the present invention, the characteristics of the magnesium oxide (MgO) thin film, which is a blocking layer, by deposition by an e-beam evaporator device is analyzed through AFM and SEM.
As shown in Fig. 5, when looking at the FTO surface photograph and the side photograph, the surface roughness seems to be quite bad. This is due to the diffuse reflection of the surface to reduce the transmittance of light seems to be the cause of the decrease in efficiency. According to the present invention, the photographs of the surface and the side surface of the thin film coated with magnesium oxide (MgO) as a blocking layer according to the present invention showed that the surface roughness was significantly controlled and the improvement of the transmittance was shown. The reason for this is that the grain size of the FTO substrate without the use of the e-beam evaporator equipment is not uniform, but the magnesium oxide is a blocking layer using the e-beam evaporator equipment. The (MgO) thin film has a larger grain size and has a circular shape.
In order to examine the characteristics of the blocking layer of the dye-sensitized solar cell using the magnesium oxide (MgO) thin film deposited by the e-beam evaporator, the emission luminance and The optical transmittance is measured, as shown in FIG.
The optical transmittance was measured by u-visible, and the magnesium oxide (MgO) thin film, which is a barrier layer, improved the transmittance of the pure FTO thin film. This is because scattering of light is suppressed by surface roughness control, and it seems that the transmittance is improved due to the growth of grain size.
In addition, in order to confirm whether the blocking-layer (MgO) thin film of the dye-sensitized solar cell is the cause of the improvement of the efficiency, the luminance value was measured by using the (BM-7) luminance meter, The values were compared by data.
The comparison value is measured by comparing the values of Raw glass, Raw + ITO, ITO + MgO, as shown in Table 1 below.
As a result of measuring the brightness, the coating of magnesium oxide (MgO) as a blocking layer and the uncoated thin film were different as shown in Table 2 below. This can be seen that the luminance value increases with the thickness of the area according to the length of the magnesium oxide (MgO) bridge (blocking layer). Due to this cause, the efficiency of dye-sensitized solar cells including a blocking layer can be expected.
A solar cell system using a magnesium oxide (MgO) thin film, which is a blocking layer structured with such a blocking network, improves the efficiency and solar optoelectronic efficiency at the same oxide thickness as the cell system sintered with conventional titanium dioxide. Can be.
In addition, as a result of comparative test experiments showing the difference between a film having a blocking layer and a film having a blocking layer, as shown in FIG. I can see high
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention.
Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims and their equivalents.
110: first substrate 120: first transparent conductive film
130: blocking layer 140: porous membrane
150: electrolyte layer 160: conductive layer
170: second transparent conductive film 180: second substrate
200: E-BEAM Evaporater
210: wafer carousel 220: substrate
230: crucible 240: vacuum pump valve
250 filament
Claims (4)
A first transparent conductive film 120 and a second transparent conductive film 170 formed of ITO or FTO on the first substrate 110 and the second substrate 180;
A blocking layer 130 formed by depositing magnesium oxide (MgO) on the first transparent conductive film 120 with an e-beam evaporator to a thickness of 500 kV to 5,000 kV and crystallizing it;
A porous film 140 formed of titanium (Ti) oxide or zirconium (Zr) oxide on the blocking layer 130;
A conductive layer 160 formed of any one material of carbon black, carbon nanotubes, or platinum on the second transparent conductive film 170; And
And an electrolyte layer 150 sealed between the first substrate 110 and the second substrate 180 by a partition and made of an iodine-based redox liquid electrolyte.
The e-beam evaporator is a dye-sensitized solar cell comprising a blocking layer, characterized in that the crystallization after depositing magnesium oxide on the first transparent conductive film 120 under the following conditions .
Backgroundpressure: 3 * 10 -6 Torr
Operating pressure: 1.6 * 10 -4 Torr
MgSource: 99.99%
MgsourceDepositionrate: 0.5Å / sec
Oxygengasratio: 2sccm
Substratetemperature: 300 ℃
k-CellImpingingAngle: 35 °
Coolingcondition: Water
Ionbeampowersupplycondition Plasmadischargecurrent: 200㎃ ~ 1,000㎃
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100098442A KR101200766B1 (en) | 2010-10-08 | 2010-10-08 | Dye-sensitized solar cell including blocking layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100098442A KR101200766B1 (en) | 2010-10-08 | 2010-10-08 | Dye-sensitized solar cell including blocking layer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120036655A KR20120036655A (en) | 2012-04-18 |
KR101200766B1 true KR101200766B1 (en) | 2012-11-13 |
Family
ID=46138208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20100098442A KR101200766B1 (en) | 2010-10-08 | 2010-10-08 | Dye-sensitized solar cell including blocking layer |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101200766B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101422509B1 (en) | 2013-07-31 | 2014-07-29 | 주식회사 상보 | Metal flexible dye-sensitized solar cell with texturing azo glass transparent electrode and manufacturing method thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10964486B2 (en) | 2013-05-17 | 2021-03-30 | Exeger Operations Ab | Dye-sensitized solar cell unit and a photovoltaic charger including the solar cell unit |
ES2748174T3 (en) | 2013-05-17 | 2020-03-13 | Exeger Operations Ab | A dye-sensitized solar cell and a method of making the solar cell |
KR20190081906A (en) * | 2017-12-29 | 2019-07-09 | 주식회사 동진쎄미켐 | Buffer layer for dye sensitized photovoltaic cell and dye sensitized photovoltaic cell having the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100822304B1 (en) | 2006-10-31 | 2008-04-16 | 한국과학기술연구원 | Fabrication method of blocking dye-sensitized solar cell with blocking layer having high-crystallinity |
-
2010
- 2010-10-08 KR KR20100098442A patent/KR101200766B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100822304B1 (en) | 2006-10-31 | 2008-04-16 | 한국과학기술연구원 | Fabrication method of blocking dye-sensitized solar cell with blocking layer having high-crystallinity |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101422509B1 (en) | 2013-07-31 | 2014-07-29 | 주식회사 상보 | Metal flexible dye-sensitized solar cell with texturing azo glass transparent electrode and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20120036655A (en) | 2012-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Sengupta et al. | Effects of doping, morphology and film-thickness of photo-anode materials for dye sensitized solar cell application–A review | |
Ye et al. | Recent advances in quantum dot-sensitized solar cells: insights into photoanodes, sensitizers, electrolytes and counter electrodes | |
Zhang et al. | Fluorinated Interfaces for Efficient and Stable Low‐Temperature Carbon‐Based CsPbI2Br Perovskite Solar Cells | |
Zhang et al. | Reduced open‐circuit voltage loss of perovskite solar cells via forming p/p+ homojunction and interface electric field on the surfaces of perovskite film | |
CN106025085A (en) | Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof | |
KR101079413B1 (en) | Dye sensitized solar cell including metal oxide of core-shell structure | |
Kyaw et al. | Top-illuminated dye-sensitized solar cells with a room-temperature-processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode | |
Mahmood et al. | A dye-sensitized solar cell based on a boron-doped ZnO (BZO) film with double light-scattering-layers structured photoanode | |
Gao et al. | A ZnO nanorod layer with a superior light-scattering effect for dye-sensitized solar cells | |
KR101200766B1 (en) | Dye-sensitized solar cell including blocking layer | |
Atabaev | Stable HTM-free organohalide perovskite-based solar cells | |
Lachore et al. | Recent progress in electron transport bilayer for efficient and low-cost perovskite solar cells: a review | |
Qu et al. | Updated progresses in perovskite solar cells | |
Chen et al. | Highly efficient bifacial CsPbIBr 2 solar cells with a TeO 2/Ag transparent electrode and unsymmetrical carrier transport behavior | |
Barichello et al. | Semi‐Transparent Blade‐Coated FAPbBr3 Perovskite Solar Cells: A Scalable Low‐Temperature Manufacturing Process under Ambient Condition | |
Khan et al. | Enhancing the efficiency of dye sensitized solar cells by using anatase and brookite mixed phases of TiO2 | |
Huang et al. | Effect of titanium oxide compact layer in dye-sensitized solar cell prepared by liquid-phase deposition | |
Yu et al. | Dual-layer synergetic optimization of high-efficiency planar perovskite solar cells using nitrogen-rich nitrogen carbide as an additive | |
Batmunkh et al. | Tin Oxide Light‐Scattering Layer for Titania Photoanodes in Dye‐Sensitized Solar Cells | |
Das et al. | A review on metallic ion and non-metal doped titania and zinc oxide photo-anodes for dye sensitized solar cells | |
Shini et al. | Heterogeneous electron transporting layer for reproducible, efficient and stable planar perovskite solar cells | |
Aliaghayee et al. | A new method for improving the performance of dye sensitized solar cell using macro-porous silicon as photoanode | |
KR101462356B1 (en) | Dye sensitized solar cell and method of fabricating the same | |
US10453973B2 (en) | Titanium oxide having hexagonal column shape, method of fabricating the same, solar cell including the same, and method of fabricating solar cell including the same | |
Zhang et al. | Hole transport free carbon-based high thermal stability CsPbI 1.2 Br 1.8 solar cells with an amorphous InGaZnO 4 electron transport layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20151105 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20161107 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20171106 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20181105 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20191106 Year of fee payment: 8 |