CN101136443A - Flexible displace substrate solar energy battery and preparation method having antireflecting protection film - Google Patents
Flexible displace substrate solar energy battery and preparation method having antireflecting protection film Download PDFInfo
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- CN101136443A CN101136443A CNA2007100613265A CN200710061326A CN101136443A CN 101136443 A CN101136443 A CN 101136443A CN A2007100613265 A CNA2007100613265 A CN A2007100613265A CN 200710061326 A CN200710061326 A CN 200710061326A CN 101136443 A CN101136443 A CN 101136443A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 29
- 229920000307 polymer substrate Polymers 0.000 claims abstract description 13
- 239000003792 electrolyte Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 64
- 230000001681 protective effect Effects 0.000 claims description 55
- 239000010409 thin film Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000004381 surface treatment Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 10
- 238000003698 laser cutting Methods 0.000 claims description 9
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- 238000007254 oxidation reaction Methods 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 2
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- 238000001039 wet etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
This invention discloses a flexible transferred substrate solar cell with a reflection reducing protection coating and its preparation method, which first of all processes the surface of a metal substrate with an electrolyte, then prepares a reflection-reducing protection film and prepares a front electrode on the surface of the substrate, cuts it with laser, prepares an P-I-N layer, cuts it with laser, prepares a back electrode, cuts it with laser and laminates the polymer substrate and finally removes the metal substrate and packages the cell to get a flexible transferred substrate solar cell with a reflection-reducing protection coating.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to a manufacturing process of a thin film solar cell device, in particular to a flexible transfer substrate solar cell and a preparation method thereof.
[ background of the invention ]
The development of human society is accompanied by the increase of energy consumption, and at the same time, the reserves of conventional energy sources (such as petroleum, coal and the like) are reduced year by year, and the environmental pollution and climate deterioration are caused by the use of the conventional energy sources, so that the pollution and damage of the global ecological environment become serious day by day. Therefore, human research, development and utilization of "renewable energy" and "green energy" are becoming more and more important and urgent. Among these, solar energy is undoubtedly the first choice for future energy sources for humans. Since the 70 s of the last century, solar photovoltaic power generation hot tide is raised in many countries, and the development of photovoltaic technology and photovoltaic industry is promoted by making ambitious mid-long term development plans in the countries such as the United states, Japan, European Union, India and the like, and the development of the new energy industry is promoted.
The thin film solar cell is a type of solar cell, and among them, the silicon thin film solar cell is favored because of the advantages of less material consumption, low manufacturing cost, abundant raw material, no toxicity, no pollution, etc. The silicon thin film solar cell can be classified into a hard substrate (e.g., a glass substrate) and a flexible substrate (e.g., stainless steel, polymer) according to the substrate. Most of the current silicon thin film solar cells are prepared on a hard substrate, but the cells are thick and heavy, are easy to break, and have inconvenience in transportation and storage. The solar cell prepared on the flexible substrate is characterized by light weight, thinness and flexibility, can be applied to other fields which are hard-substrate solar cells and are difficult to be competent, such as solar automobiles, airplanes, airships, buildings and the like which need special curved surfaces, is very convenient to store due to the light weight, thinness and flexibility, but the process for preparing the integrated cell is complex due to the use of the stainless steel substrate, and the deposition temperature of the cell is greatly limited due to the use of the polymer substrate.
A novel flexible transfer substrate solar cell with an anti-reflection protective film can overcome the defects of the stainless steel substrate solar cell and the polymer substrate solar cell. The transfer substrate is a temporary substrate which is a metal foil, a transparent conductive film (TCO) front electrode is deposited on the metal foil, then a silicon thin film battery is deposited on the front electrode in the order of p-i-n, and finally the transfer substrate is transferred to a polymer substrate, and the temporary substrate of the metal foil is removed. The main advantages of using this technique are: TCO and individual silicon layers can be deposited using temperatures and similar processes comparable to conventional glass substrates, which enables high quality materials to be produced at higher deposition rates while enabling roll-to-roll deposition integration techniques on polymer substrates.
In the novel flexible transfer substrate solar cell structure with the antireflection protection film, a process for removing a temporary substrate (metal foil) by using wet etching is a very critical link. In the wet etching process, after the metal foil is etched, the etching solution is easy to contact with the front electrode, and if the front electrode is not dense enough, the etching solution may penetrate through the front electrode to contact with the silicon thin film battery, so that the performance of the solar battery is affected, and even the silicon thin film battery may be etched away together. Therefore, the protection of the TCO front electrode and the silicon thin film cell during the wet etching process is one direction of research.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provides a flexible transfer substrate solar cell with an anti-reflection protective film and a preparation method thereof.
In order to achieve the above object, the present invention provides a flexible transfer substrate solar cell with an anti-reflection protective film, comprising: an anti-reflection protective film, a front electrode, a P-I-N silicon thin film battery, a back electrode and a polymer substrate.
The invention also discloses a preparation method of the flexible transfer substrate solar cell with the anti-reflection protective film, which comprises the following steps: firstly, carrying out surface treatment on a metal substrate by adopting electrolyte, then preparing an anti-reflection protective film on the metal substrate, then preparing a front electrode on the surface of the metal substrate with the anti-reflection protective film, and then carrying out laser cutting and scribing on the surface of the front electrode; then preparing a P-I-N layer, and then carrying out laser cutting and scribing on the P-I-N layer; then preparing a back electrode, and carrying out laser cutting and scribing; and then laminating the polymer substrate, finally removing the metal substrate and carrying out cell packaging treatment to obtain the flexible transfer substrate solar cell with the anti-reflection protective film.
The invention has the beneficial effects that: the anti-reflection protective film is added on the surface of the front electrode, so that the anti-reflection protective film plays a role in protection on one hand, the front electrode is prevented from being influenced by corrosive liquid when the temporary metal substrate is removed, and the anti-reflection effect on the other hand is achieved, so that the light absorption of the cell is improved, the current, the open-circuit voltage and the filling factor of the cell are improved, the photoelectric conversion efficiency of the cell is improved, and the efficiency of the solar cell is improved.
[ description of the drawings ]
FIG. 1 is a schematic view of a solar cell with a metal substrate subjected to surface treatment according to the present invention;
FIG. 2 is a flow chart of a method for manufacturing a solar cell with a metal substrate subjected to surface treatment according to the present invention;
FIG. 3 is a schematic view of a solar cell without surface treatment of the metal substrate according to the present invention;
FIG. 4 is a flow chart of a method for manufacturing a solar cell without surface treatment of a metal substrate according to the present invention.
[ detailed description ] embodiments
The technical solution of the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
The flexible transfer substrate solar cell with the anti-reflection protective film comprises the anti-reflection protective film, a front electrode, a P-I-N silicon thin film cell, a back electrode, a polymer substrate and the like. The anti-reflection protective film comprises Al2O3Film, SiNx-H film and SiO2At least one of thin film and other wide band gap materials. The thickness of the anti-reflection protective film is lambda/4 n, wherein lambda is the wavelength, and n is the refractive index of the anti-reflection medium.
According to the preparation method, the surface of the used aluminum foil needs to be flat, an anti-reflection protective film O is directly prepared on a metal substrate, then a front electrode T is prepared on the surface of a metal substrate A with the anti-reflection protective film O, then laser cutting is carried out, a P-I-N layer is prepared, laser cutting is carried out, a back electrode is prepared, laser cutting is carried out again, a polymer substrate S is laminated on the back electrode M through EVA (ethylene-vinyl acetate copolymer), finally the metal substrate A is removed, and battery packaging treatment is carried out, so that the flexible transfer substrate solar battery with the anti-reflection protective film is obtained. Wherein,
the metal substrate may be previously immersed in an electrolyte solution for surface treatment. The metal substrate may be an aluminum foil having a thickness of 0.05mm to 2 mm.
The preparation of the anti-reflection protective film O on the metal substrate can be as follows:
(1) al preparation by anodic oxidation technology2O3The film has the following specific parameters:
anode voltage: 20-80V;
anodic oxidation solution: 0.5-5.0mol/L of at least one of oxalic acid or chromic acid solution;
temperature of the solution: -10-50 ℃;
and (3) oxidation time: 0.5-30 minutes.
Or (2) preparing an anti-reflection protective film SiNx: H by adopting a plasma enhanced chemical vapor technology, wherein the process parameters are as follows: gas flow rate: NH (NH)3＝10-100SCCM；
N2＝1000-3000SCCM；
SiH4/Ar(5％)＝100-1000SCCM；
Power: 50-500mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.5 to 2 Torr;
time: 30-90 minutes.
Or (3) preparing an anti-reflection protective film SiO by adopting a plasma enhanced chemical vapor technology2The technological parameters are as follows:
gas flow rate: n is a radical of2O＝500-2000SCCM；
N2＝100-500SCCM；
SiH4/Ar(5％)＝10-500SCCM；
Power: 50-500mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.1 to 5 Torr;
time: 5-30 minutes.
Or, (4) in the anti-reflection protective film SiO2Preparing an anti-reflection protective film SiNx by using a plasma enhanced chemical vapor technology: h, then SiO with a certain thickness is deposited2And combining to form the anti-reflection protective film.
The front electrode T is a transparent conductive film TCO, and SnO can be used2Or ITO, etc.;
the P-I-N silicon thin film battery comprises a P-type window layer P and an intrinsic active region I, N + region N which are sequentially deposited by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method;
the back electrode M is composed of metal Ag, Al, transparent conductive ZnO and the like. The deposition back electrode M adopts an evaporation or metal organic chemical vapor deposition method, and the electrode is led out;
the polymer substrate S adopts transparent PET or other polymer film materials for packaging with the thickness of 0.1 mm-2.0 mm, and the battery and the polymer substrate S are laminated together by a laminating machine.
And finally, removing the metal substrate A by adopting wet etching, and packaging the battery by using a polymer.
The invention relates to a preparation method of a flexible transfer substrate solar cell with an anti-reflection protective film, which comprises the following two schemes of preparing the anti-reflection protective film O on a metal substrate A: the surface of the metal substrate a shown in fig. 3 and 4 is not subjected to surface treatment; the metal substrate a shown in fig. 1 and 2 is surface-treated to have a textured structure.
The specific preparation process of the metal substrate surface treatment comprises the following steps:
and (3) immersing the metal substrate A into electrolyte for surface treatment, and enabling the metal substrate A to have a suede structure by controlling surface treatment process parameters (voltage, temperature, time and the like). For example, the metal substrate A is made of aluminum foil, and the electrolyte is made of a mixed solvent of perchloric acid (or other corresponding acid chemicals which are not easy to damage the aluminum foil) and absolute ethyl alcohol (or other organic solvents), wherein the ratio of the perchloric acid to the absolute ethyl alcohol is 1: 4; surface treatment voltage: 12V-18.5V; temperature of the electrolyte: 2-15 ℃; electrode spacing: 4 cm; surface treatment time: 1-2 minutes.
Example 1: preparation of anti-reflection protective film SiO by plasma enhanced chemical vapor technology2The technological parameters are as follows:
gas flow rate: n is a radical of2O＝1420SCCM；
N2＝392SCCM；
SiH4/Ar(5％)＝150SCCM；
Power: 170mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.9 Torr;
time: for 10 minutes.
Example 2: preparing an anti-reflection protective film SiNx by adopting a plasma enhanced chemical vapor technology: h, the process parameters are as follows:
gas flow rate: NH (NH)3＝55SCCM；
N2＝1960SCCM；
SiH4/Ar(5％)＝600SCCM；
Power: 115mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.9 Torr;
time: for 50 minutes.
It is worth noting that in the prior art, the front electrode is directly prepared on the metal substrate by the transfer substrate solar cell, and no protective measures are taken, so that after the metal substrate is corroded by a wet method, the front electrode and the P-I-N silicon thin film cell are corroded and invaded by a corrosive liquid, and the performance of the solar cell is influenced. In the invention, an anti-reflection protective film is added between the metal substrate A and the front electrode T, and the transfer substrate solar cell is prepared on the basis. Therefore, the process of preparing the anti-reflection protective film O on the metal substrate A is the key point of the whole process of the flexible transfer substrate solar cell with the anti-reflection protective film.
In summary, the process for preparing an anti-reflection protective film for a flexible transfer substrate solar cell with an anti-reflection protective film of the present invention obtains the anti-reflection protective film O with a thickness meeting the requirement by controlling the technical parameters (including voltage, temperature, time, etc.) of anodic oxidation and the macroscopic parameters (including temperature, air pressure, power, etc.) of plasma enhanced chemical vapor deposition. Therefore, a protective layer is additionally arranged between the metal substrate A and the front electrode T, the front electrode T is prevented from being influenced by corrosive liquid when the temporary metal substrate A is removed, and meanwhile, the film can play a role in anti-reflection, so that the light absorption of the battery is improved, the current and open-circuit voltage of the battery are improved, the filling factor is improved, and the photoelectric conversion efficiency of the battery is further improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A flexible transfer substrate solar cell with an antireflective protective film, comprising: an anti-reflection protective film, a front electrode, a P-I-N silicon thin film battery, a back electrode and a polymer substrate.
2. The flexible transfer substrate solar cell with an antireflective coating of claim 1, wherein: the anti-reflection protective film is Al2O3Film, SiNx-H film and SiO2At least one of the films.
3. The flexible transfer substrate solar cell with antireflection protective film according to claim 1 or 2, characterized in that: the thickness of the anti-reflection protective film is lambda/4 n.
4. A preparation method of the flexible transfer substrate solar cell with the antireflection protective film, which is characterized by comprising the following steps:
preparing an anti-reflection protective film on a metal substrate;
sequentially depositing a front electrode on the surface of the metal substrate with the anti-reflection protective film, and carrying out laser cutting and scribing on the surface of the front electrode; then depositing a P-I-N structure silicon thin film battery; then laser cutting and scribing are carried out; preparing a back electrode; laser cutting and scribing; laminating a polymer substrate on the back electrode; and removing the metal substrate and carrying out battery packaging treatment.
5. The method for preparing a flexible transfer substrate solar cell with an anti-reflection protective film according to claim 4, wherein the method comprises the following steps: the method also comprises the step of immersing the metal substrate into the electrolyte in advance for surface treatment.
6. The method for preparing the flexible transfer substrate solar cell with the antireflection protective film according to claim 4 or 5, is characterized in that: the metal substrate is an aluminum foil with the thickness of 0.05-2 mm.
7. The method for preparing a flexible transfer substrate solar cell with an anti-reflection protective film according to claim 6, wherein the method comprises the following steps: preparing anti-reflection protective film Al on the surface of the metal substrate by adopting an anodic oxidation technology2O3The technological parameters are as follows:
anode voltage: 20-80V;
anodic oxidation solution: 0.5-5.0mol/L of at least one of oxalic acid or chromic acid solution;
temperature of the solution: -10-50 ℃;
and (3) oxidation time: 0.5-30 minutes.
8. The method for preparing a flexible transfer substrate solar cell with an anti-reflection protective film according to claim 6, wherein the method comprises the following steps: preparing an anti-reflection protective film SiNx H on the surface of a metal substrate by adopting a plasma enhanced chemical vapor technology, wherein the process parameters are as follows:
gas flow rate: NH (NH)3＝10-100SCCM；
N2＝1000-3000SCCM；
SiH4/Ar(5％)＝100-1000SCCM；
Power: 50-500mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.5 to 2 Torr;
time: 30-90 minutes.
9. The method for preparing a flexible transfer substrate solar cell with an anti-reflection protective film according to claim 6, wherein the method comprises the following steps: preparing anti-reflection protective film SiO on the surface of the metal substrate by adopting a plasma enhanced chemical vapor technology2The technological parameters are as follows:
gas flow rate: n is a radical of2O＝500-2000SCCM；
N2＝100-500SCCM；
SiH4/Ar(5％)＝10-500SCCM；
Power: 50-500mW/cm2；
Power supply frequency: 13.56 MHz;
air pressure: 0.1 to 5 Torr;
time: 5-30 minutes.
10. The method for preparing a flexible transfer substrate solar cell with an anti-reflection protective film according to claim 9, comprising the following steps: in the anti-reflection protective film SiO2Preparing anti-reflection protective film SiNx: H by plasma enhanced chemical vapor phase technology, and then depositing SiO2And combining to form the anti-reflection protective film.
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| CNA2007100613265A CN101136443A (en) | 2007-09-30 | 2007-09-30 | Flexible displace substrate solar energy battery and preparation method having antireflecting protection film |
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| CNA2007100613265A CN101136443A (en) | 2007-09-30 | 2007-09-30 | Flexible displace substrate solar energy battery and preparation method having antireflecting protection film |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104087A (en) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | Method for preparing flexible thin film solar cell |
| CN102104022A (en) * | 2009-12-17 | 2011-06-22 | 吉林庆达新能源电力股份有限公司 | Laser scribing process of amorphous silicon solar battery |
| CN102208458A (en) * | 2011-04-11 | 2011-10-05 | 北京精诚铂阳光电设备有限公司 | Large-area flexible film solar cell and manufacturing method thereof |
| CN102254990A (en) * | 2011-06-24 | 2011-11-23 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of passivation layer on P-type surface of solar cell |
| CN102312530A (en) * | 2010-07-07 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Integrated solar energy tile and manufacturing method thereof |
| CN109786474A (en) * | 2018-12-17 | 2019-05-21 | 北京汉能光伏投资有限公司 | Photovoltaic cell chips and preparation method thereof |
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2007
- 2007-09-30 CN CNA2007100613265A patent/CN101136443A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104022A (en) * | 2009-12-17 | 2011-06-22 | 吉林庆达新能源电力股份有限公司 | Laser scribing process of amorphous silicon solar battery |
| CN102312530A (en) * | 2010-07-07 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Integrated solar energy tile and manufacturing method thereof |
| CN102104087A (en) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | Method for preparing flexible thin film solar cell |
| CN102104087B (en) * | 2010-12-15 | 2012-11-07 | 上海理工大学 | Method for preparing flexible thin film solar cell |
| CN102208458A (en) * | 2011-04-11 | 2011-10-05 | 北京精诚铂阳光电设备有限公司 | Large-area flexible film solar cell and manufacturing method thereof |
| CN102254990A (en) * | 2011-06-24 | 2011-11-23 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of passivation layer on P-type surface of solar cell |
| CN109786474A (en) * | 2018-12-17 | 2019-05-21 | 北京汉能光伏投资有限公司 | Photovoltaic cell chips and preparation method thereof |
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