CN103258955B - Encapsulation method of organic electronic device - Google Patents

Encapsulation method of organic electronic device Download PDF

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Publication number
CN103258955B
CN103258955B CN201210040415.2A CN201210040415A CN103258955B CN 103258955 B CN103258955 B CN 103258955B CN 201210040415 A CN201210040415 A CN 201210040415A CN 103258955 B CN103258955 B CN 103258955B
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electronic device
organic
organic electronic
layer
film
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CN103258955A (en
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吴茹菲
刘键
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

Disclosed is a method of encapsulating an organic electronic device, comprising: before manufacturing an electronic device, depositing a multilayer composite film on the back of a substrate material; and after the electronic device is manufactured, depositing a multilayer composite film on the surface of the organic electronic device. The packaging method of the organic electronic device provided by the invention adopts a chip-level packaging method, integrates the packaging process into the device manufacturing process, and replaces the traditional mode of firstly manufacturing the device on a wafer and then independently packaging the device after cutting. The invention adopts organic/inorganic composite multilayer film package to isolate water and oxygen, thus greatly improving the service life of the organic electronic device, realizing flexible package and retaining the folding and bending performance of the organic electronic device to the maximum extent. Finally, the invention can realize film formation at low temperature below 120 ℃, and reduces the heat damage to devices and plastic substrates.

Description

The method for packing of organic electronic device
Technical field
The present invention relates to Electronic Packaging field, particularly a kind of method for packing of organic electronic device.
Background technology
Organic optoelectronic device recent two decades develops rapidly, especially organic light emission two machine pipe (OLED), has that luminous efficiency is high, operating voltage is low, a frivolous series of advantages such as soft, and its correlation technique and industry obtain extensive concern.Current OLED shows annual value of production more than 1,000,000,000 dollars, and product relates to TV, MP3, mobile phone, vehicle audio etc.The numerous and confused huge funds of shop illumination giant such as OSRAM, GE, Philips march OLED lighting field and started to release Related product in 2009, predict according to professional institution NanoMarkets Market Report, OLED display and lighting market will reach 10,900,000,000 dollars in 2012, within 2014, reach 15,500,000,000 dollars.In China, within 2005, in the Tenth Five-Year Plan (2001-2005) is listed OLED Display Technique by the Department of Science and Technology; Clearly be classified as by the semiconductor lighting products such as OLED again in National Program for Medium-to Long-term Scientific and Technological Development in 2006 " major fields and first develop theme ", the company such as global, Shanghai heavenly steed in China's Visionox, Sichuan Changhong, SVA, Jilin has established OLED production line one after another in recent years.
In organic solar batteries (OPV), OPV is considered to realize cheap electric energy with rational efficiency and cheap cost, thus becomes competitive third generation solar energy generation technology.Current organic solar batteries energy conversion efficiency is the highest more than 8%, close on the extensive industrialization stage, European Union and the U.S. etc. support the research and development of organic solar batteries all energetically, Heliatek, Solarmer, and Plextronics Deng Duo company also starts organic solar batteries of going into operation.Also pay much attention to the development of organic solar technology in China, and You Duojia school and research institute are in the correlative study being engaged in material and device.
Usually contain active metal electrode in OLED, OPV and printed electronic device, the partial function material of device is also comparatively responsive to water oxygen, and water oxygen accelerates device aging when devices function by electrochemical reaction, reduces device lifetime.Thus above-mentioned device is encapsulated, makes the steam in each functional layer of device and air, oxygen gas component isolates, to raising device stability and working life most important.
Traditional rigidity OLED, OPV device package are generally to caps such as device epoxy resin cure glass in glove box, and be combined drying sheet encapsulation, but rigidity encapsulation cannot meet the encapsulation requirement of flexible device, and the water oxygen permeability of flexible plastic substrate itself is also higher than 10-5g/m 2/ day, this just requires that carrying out water oxygen to flexible substrate stops isolation processing.
Summary of the invention
The object of the invention is, provide a kind of and there is flexible structure and have outstanding water Oxygen permeation barrier properties, the method for packing of the organic electronic device of the damage to device and plastic can be reduced.
The method for packing of a kind of organic electronic device provided by the invention, comprising:
Before making electronic device, at backing material back side deposit multi-layer compound film;
After electronic device completes, at organic electronic device surface deposition multi-layer compound film.
Further, described multi-layer compound film comprises:
The stack layer that some layers of organic layer and inorganic layer replace;
Described organic layer is prepared from by organic polymer, for isolated water, oxygen;
Described inorganic layer is prepared from by inorganic matter, for increasing flexible, flexible, anti-fracture.
Further, described organic polymer comprises:
Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xc yh z.
Further, described inorganic matter comprises: SiN x, SiO y, TiO 2, Ta 2o 3or aluminium.
Further, described is adopt plasma reinforced chemical vapour deposition method growing film at the backing material back side and organic electronic device surface deposition multi-layer compound film, ensure film formation at low temp, reduce the fire damage to electronic device and plastic, film growth rate is moderate simultaneously as far as possible.
Further, the temperature of described film formation at low temp is less than 120 DEG C.
The method for packing of a kind of organic electronic device provided by the invention, adopts chip-scale packaging method, encapsulation process is integrated in device making technics process, instead of first making devices on wafer in the past, the mode of encapsulation separately after cutting.The benefit done like this is, raise the efficiency, reduce costs, the present invention simultaneously innovatively have employed the encapsulation of organic/inorganic complex multi layer films, both can isolated water, oxygen, thus greatly improve the useful life of organic electronic device, can flexible package be realized again, at utmost remain with the performance that organic electronic device is collapsible, bending.Finally, this invention can realize less than 120 DEG C film formation at low temp, decreases the fire damage to device and plastic.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of a kind of organic electronic device that the embodiment of the present invention provides.
Embodiment
As shown in Figure 1, the method for packing of organic electronic device provided by the invention is divided into front operation and rear operation two step.
Front operation is before being manufactured with organic electronic device 2, first at substrate 1 material back side deposit multi-layer compound film 3.Multi-layer compound film 3 is deposited with by plasma reinforced chemical vapour deposition method (hereinafter referred to as PECVD method).The stack layer that multi-layer compound film 3 is replaced by some layers of organic layer and inorganic layer.Organic layer is prepared from by organic polymer, comprising: Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xc yh z.For isolated water, oxygen; Inorganic layer is inorganic matter, for increasing flexible, flexible, anti-fracture.Inorganic layer is prepared from by inorganic matter, comprising: SiN x, SiO y, TiO 2, Ta 2o 3or aluminium.The stack layer that each organic matter layer and inorganic layer replace can be arranged in pairs or groups use, as: polypropylene/aluminium, polyacrylate/aluminium, polypropylene/polypropylene acid fat/aluminium/polypropylene etc.Experiment proves, organic/inorganic composite layer has coordinating effect, than the better effects if of multiple organic layer repeatedly stacking isolated water, oxygen; The superiors of composite bed adopt organic substance, improve isolated water, oxygen ability further.This organic-inorganic multi-layer film structure can effective block water Oxygen permeation because of the inorganic layer containing fine and close free of pinholes, the thickness of single inorganic layer is in a hundred or so nanometer scale, all extremely count the organic layer of micron thickness containing hundreds of nanometer between inorganic layer, the repetitive of multi-layer compound film 3 structure generally containing 2-10 this organic layer/inorganic layer, multi-layer compound film 3 is still flexible generally.The water oxygen blocking capability of this encapsulating film depends on the compactness extent of single inorganic film, repetitive number, and in addition, organic layer material is to the repair of inoranic membrane defect and the passage extending water Oxygen permeation thus can increase water oxygen blocking capability further.On the other hand, the parameter such as stress, adhesion that the selection of organic layer and inorganic layer materials will determine between film and film, thus has material impact to the stability of encapsulating structure and anti-rubbing around effect.
PECVD method can realize fine and close pin-hole free films growing film, and deposition velocity can reach hundreds of nm/minute.Compare, the SiO of the method growths such as physical vapour deposition (PVD) (PVD), chemical vapour deposition (CVD) (CVD), high vacuum heat deposition, magnetron sputtering xor SiN xfilm or second-rate, or need higher temperature, generally more than 150 DEG C; Ald (ALD) system can prepare very fine and close inorganic layer, but ALD system low-temperature epitaxy speed is extremely slow, at 80 DEG C, grow Al 2o 3film, often growing 1 nanometer needs about 5 minutes.
Rear operation is after organic electronic device 2 completes, at organic electronic device 2 surface deposition multi-layer compound film 3 encapsulated layer.Multi-layer compound film 3 structure is same as above.Afterwards, then by wafer multiple individual chips is cut into.
The method for packing of a kind of organic electronic device provided by the invention, adopts chip-scale packaging method, encapsulation process is integrated in device making technics process, instead of first making devices on wafer in the past, the mode of encapsulation separately after cutting.The benefit done like this is, raise the efficiency, reduce costs, the present invention simultaneously innovatively have employed the encapsulation of organic/inorganic complex multi layer films, both can isolated water, oxygen, thus greatly improve the useful life of organic electronic device, can flexible package be realized again, at utmost remain with the performance that organic electronic device is collapsible, bending.Finally, this invention can realize less than 120 DEG C film formation at low temp, decreases the fire damage to device and plastic.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.

Claims (5)

1. a method for packing for organic electronic device, is characterized in that, comprising:
Before making electronic device, at backing material back side deposit multi-layer compound film;
After electronic device completes, at organic electronic device surface deposition multi-layer compound film, described is adopt plasma reinforced chemical vapour deposition method growing film at the backing material back side and organic electronic device surface deposition multi-layer compound film, ensure film formation at low temp, reduce the fire damage to electronic device and plastic, film growth rate is moderate simultaneously as far as possible.
2. the method for packing of organic electronic device as claimed in claim 1, it is characterized in that, described multi-layer compound film comprises:
The stack layer that some layers of organic layer and inorganic layer replace;
Described organic layer is prepared from by organic polymer, for increasing flexible, flexible, anti-fracture;
Described inorganic layer is prepared from by inorganic matter, for isolated water, oxygen.
3. the method for packing of organic electronic device as claimed in claim 2, it is characterized in that, described organic polymer comprises:
Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xc yh z.
4. the method for packing of organic electronic device as claimed in claim 3, it is characterized in that, described inorganic matter comprises:
SiN x, SiO y, TiO 2, Ta 2o 3or aluminium.
5. the method for packing of organic electronic device as claimed in claim 1, is characterized in that:
The temperature of described film formation at low temp is less than 120 DEG C.
CN201210040415.2A 2012-02-20 2012-02-20 Encapsulation method of organic electronic device Expired - Fee Related CN103258955B (en)

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* Cited by examiner, † Cited by third party
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CN103715366A (en) 2013-12-20 2014-04-09 京东方科技集团股份有限公司 OLED film packaging structure, OLED device and display apparatus
CN104752633A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Thin film packaging method
CN104752634A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Processing method of alternate structure thin film packaging layer interface
CN103943789A (en) * 2014-04-18 2014-07-23 深圳市华星光电技术有限公司 OLED device and manufacturing method thereof
US20160056414A1 (en) * 2014-08-21 2016-02-25 Universal Display Corporation Thin film permeation barrier system for substrates and devices and method of making the same
CN105789473B (en) * 2014-12-22 2018-11-09 昆山国显光电有限公司 Flexible substrate and preparation method thereof
CN104900812A (en) 2015-04-23 2015-09-09 京东方科技集团股份有限公司 Film packaging structure, manufacture method thereof and display device
CN104882565B (en) * 2015-05-14 2017-10-13 京东方科技集团股份有限公司 Thin-film packing structure and preparation method thereof and display device
CN105514274B (en) * 2016-01-08 2019-10-01 中国计量学院 It is a kind of based on lithium fluoride/polyvinyl alcohol alternate thin films organic semiconductor device thin film encapsulation technology
CN109279180B (en) * 2017-07-21 2020-06-16 深圳市中科先见医疗科技有限公司 Medical implant component with an encapsulation layer and method for encapsulating a medical implant component
CN108666421A (en) * 2018-05-23 2018-10-16 京东方科技集团股份有限公司 Flexible substrates, organic electroluminescent LED display base plate and display device
CN110556399B (en) * 2018-05-31 2020-10-27 浙江清华柔性电子技术研究院 Transition device of flexible device, preparation method and flexible device pasting method
CN112736201A (en) * 2020-12-30 2021-04-30 奕瑞影像科技(太仓)有限公司 Indirect flat panel detector and preparation method thereof

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