CN102437288A - Packaging structure of OLED - Google Patents

Packaging structure of OLED Download PDF

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Publication number
CN102437288A
CN102437288A CN2011103633638A CN201110363363A CN102437288A CN 102437288 A CN102437288 A CN 102437288A CN 2011103633638 A CN2011103633638 A CN 2011103633638A CN 201110363363 A CN201110363363 A CN 201110363363A CN 102437288 A CN102437288 A CN 102437288A
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China
Prior art keywords
layer
organic electroluminescence
electroluminescence device
encapsulating structure
substrate
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CN2011103633638A
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Chinese (zh)
Inventor
彭德权
潘晓勇
李斌
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Sichuan Changhong Electric Co Ltd
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Sichuan Changhong Electric Co Ltd
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Priority to CN2011103633638A priority Critical patent/CN102437288A/en
Publication of CN102437288A publication Critical patent/CN102437288A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to a packaging structure of an OLED. The structure comprises a substrate of the OLED. One side of the substrate is provided with an anode of the OLED, an organic layer and a cathode. The outboard of the cathode is at least provided with a packaging layer. The packaging layer is a multilayer composite membrane structure which is formed by alternative deposition of two inorganic insulating materials through an atomic layer deposition system. The packaging structure of the OLED in the invention has a low deposition temperature. The organic layer of a luminescent device can not be damaged. Other organic film formation equipment is not needed. Equipment investment costs and land occupation areas can be saved. The inorganic film layer structure alternatively prepared by using an atomic layer deposition method is compact. Pinholes are less. Water and oxygen can be effectively avoided to penetrate into a device. A protection layer is processed on the packaging layer so as to effectively protect the packaging layer and obstruct the water and the oxygen.

Description

The encapsulating structure of organic electroluminescence device
Technical field
The present invention relates to the encapsulating structure of organic electroluminescence device (OLED).
Background technology
Characteristics such as that organic electroluminescence device (OLED) has is low in energy consumption, light, brightness is high, the visual field is wide and high-contrast and reaction be fast, and can realize flexible the demonstration well.Organic electroluminescence device has been obtained huge progress in the time of more than ten years in the past, and producers such as Samsung, LG, Sony have released relevant application product, and other display producer also drops into research and development one after another.
At present, also there are some problems so far in the organic electroluminescence device technical development, device lifetime short limit to a great extent the process of organic electroluminescence device industrialization.The life-span of organic electroluminescence device is relevant with the performance and the life-span of the organic material of being selected for use, relevant with the method for packing of luminescent device on the other hand on the one hand.Cause that the principal element that organic electro-luminescence device lifetime reduces has: 1, mostly the metal material of organic electroluminescence device negative electrode is the metal that chemical property is comparatively active; Very easily in air or other contain in the atmosphere of aerobic and suffer erosion, electrochemical corrosion particularly takes place in containing the environment of steam more easily.Physical vaporous deposition is generally adopted in the making of organic electroluminescence device cathode material, and small dust granule sticks to and all very easily makes cathode material produce pin hole on the organic function layer, becomes the passage that steam, oxygen contact with organic function layer.2, the carbonyls of oxygen and luminescent layer generation oxidation generation is effective quencher, can significantly reduce the luminous quantum efficiency of organic electroluminescence device.Steam makes the generation hydrolysis of organic layer compound and influences electric conductivity, causes stability to reduce greatly.3, organic electroluminescence device when work the heat that produces further the luminescent material in the aggravation organic electroluminescence device, auxiliary material, electrode etc. are aerial aging, and then influence the useful life of device.In order to make organic electro-luminescence device lifetime reach practical requirement, the water vapor permeable rate that requires light is less than 10 -6G/ (m 2D), oxygen permeability is less than 10 -5~10 -3G/ (m 2D).When real work, negative electrode be corroded 10% will have a strong impact on device work.
Traditional organic electroluminescence device encapsulation technology is rigid substrates (glass or metal) to be gone up the electrode of making encapsulate with each organic function layer.This packaged type generally is to add a cover plate to luminescent device, at the inboard drier that attaches of cover plate, through fluid sealants such as epoxy resin substrate and cover plate is combined.Encapsulation cover plate mainly is divided into metal cover board and glass cover-plate two big classes; Compositions such as metal cover board promptly can block water, oxygen are to the infiltration of light; Can make device firm again, but its opaqueness, weight and cost issues limit the application of this method for packing on organic electroluminescence device.Glass cover-plate has excellent chemical stability, electrical insulating property, compactness, but its bad mechanical strength is easy to generate micro-crack, and the large scale cover plate is easy to generate distortion.The encapsulation of tradition organic electroluminescence device needs fluid sealant, because the porousness of fluid sealant, airborne moisture penetrates into device inside easily, produces stain.Though traditional organic electroluminescence device encapsulation technology is effectively but very clumsy, and cost is high, if organic electroluminescence device adopts these mechanical parts to encapsulate, is difficult on the price and competes with LCD (LCD).
The thin-film package material mainly contains thin polymer film, metallic film, inorganic insulation body thin film etc., does not re-use metal or glass cover-plate, fluid sealant and drier, and the advantage of bringing thus has: 1, the weight of display and thickness reduce by half; 2, substitute the mechanical encapsulation part with film moisture separator, greatly reduce cost; If 3 thin-film package materials are transparent material, organic electroluminescence device manufacturer can cast away the bottom-emission mode that light is stopped by the TFT transistor fully, adopts the top light emitting mode, effectively improves luminous efficiency and resolution; 4, thin-film package is that flexible display technologies is brought breakthrough progress.
Number according to encapsulated layer can be divided into single thin film encapsulation and plural layers encapsulation, and the monofilm encapsulation is difficult to satisfy organic electroluminescence device encapsulation requirement.The plural layers encapsulation is like polymer/inorganic thing structure; Like the Barix encapsulated layer of Vitex Systems company exploitation, need to accomplish the polymer/inorganic depositing of thin film at the indoor distinct methods of multi-cavity, partial polymer also needs UV to solidify to form film; This mode operating procedure is many, long processing period.Methods such as physical vapor deposition (PVD) commonly used, chemical vapor deposition (CVD) are produced the needed higher temperature of inorganic insulation film has certain damage to the device organic layer, and is easy to generate pin hole.
Flexible organic electroluminescent device only is the different of substrate with common the different of organic electroluminescence device, thereby substrate has just become to influence the main cause in flexible organic electroluminescent device efficient and life-span.Plastic substrate is compared with glass substrate has following shortcoming: 1, the evenness of plastic substrate is than glass substrate difference, and small uneven meeting brings defective for the device film layer structure, causes device failure; 2, the water oxygen permeability of plastic substrate is higher than glass substrate far away, influences the life-span of device.
For this reason, people have carried out modification to plastic substrate, are mainly improving the surface smoothness of plastic substrate, reduce to cause that modified layer produces the uneven state of pin hole, improves water and oxygen barrier property.The patent No. is that 02149122.4 patent of invention provides a kind of method of plastic substrate being carried out modification; This method need be on plastic substrate the liquid unpolymerized polymer monomer layer of vapor deposition one deck; After aggregating into smooth solid film after the ultraviolet irradiation; Deposit one deck ceramic material layer on polymer material layer then, recirculation repeats repeatedly polymer/ceramic material layer.This method to the plastic substrate modification needs the polymer monomer layer on plastic substrate, to form smooth solid film, and processing technology is complicated, and equipment has high input, and is difficult to realize flexible coiled strip production.
Summary of the invention
The invention provides a kind of encapsulating structure of organic electroluminescence device, this encapsulating structure is fine and close, and pin hole is few; Can intercept water oxygen effectively and penetrate into device inside; Satisfy the requirement of device application, and can reduce the investment of devices cost, be fit to large-area preparation and mass production.
The encapsulating structure of organic electroluminescence device of the present invention; Include the substrate of organic electroluminescence devices; Be provided with anode, organic layer and the negative electrode of organic electroluminescence devices in a side of substrate; At least be provided with encapsulated layer in the outside of said negative electrode, described encapsulated layer is the MULTILAYER COMPOSITE membrane structures of at least two kinds of inorganic insulating materials through the atomic layer deposition system alternating deposit.Atomic layer deposition system is a kind of film deposition apparatus, is mainly used in semiconductor device manufacturing, solar cell, catalyst research etc., also is useful on the preparation of passivation layer in the organic electroluminescence device.In organic electroluminescence device luminescent device film encapsulation field; Generally be to be divided into organic membrane encapsulation, inoranic membrane encapsulation, the encapsulation of organic/inorganic film; Ald is a kind of mode that forms inoranic membrane, and its depositing temperature is low, can not injure organic layer in the device; And the film forming compact structure can intercept water oxygen effectively and penetrate into device inside.
Optional, said substrate is glass, metal or plastics, wherein the cost of metallic substrates is higher, uses less aborning.Plastic-substrates can adopt the material of polyesters or polyimides compounds.When substrate was glass, only need encapsulate in the negative electrode outside of organic electroluminescence device and get final product.
Preferred a kind of mode does; When substrate is plastics; Described encapsulated layer is provided with respectively in the outside of negative electrode and the inboard of substrate; This is because plastic-substrates can not be prevented the infiltration of sealing oxygen effectively, so need deposit setting in two sides of organic electroluminescence device, guarantees that water oxygen permeability is low.
The multilayer complex films of said encapsulated layer is made up of 2~50 layers monofilm, and said monofilm is by Al 2O 3, SiO x, Si 3N 4, SiN xO y, AlN, ZrO 2, HfO 2, Ta 2O 5, La 2O 3, ZnO, TaN, TiO 2Or at least two kinds of metabolies formations, wherein Si among the TiN 3N 4In 0<x≤1,0<y≤1, SiO xMiddle x is 1 or 2.
Further, the multilayer complex films of said encapsulated layer is made up of 2~50 layers monofilm, is good with 15~30 layers wherein.Said monofilm is by Al 2O 3, SiO x, Si 3N 4, SiN xO y, AlN, ZrO 2, HfO 2, Ta 2O 5, La 2O 3, ZnO, TaN, TiO 2Or at least two kinds of materials formations, wherein Si among the TiN 3N 4In 0<x≤1,0<y≤1, SiO xMiddle x is 1 or 2.
Preferably, said monofilm is by Al 2O 3/ ZrO 2, or Al 2O 3/ Si 3N 4, or Al 2O 3/ SiO xConstitute.Depositing temperature is less than 300 ℃ when encapsulated layer is deposited.The membrane material of being close to the organic electroluminescence device negative electrode is preferably Al 2O 3, SiO x, Si 3N 4, SiN xO y, AlN.
Further, in the encapsulated layer in every layer of monofilm the thickness of every kind of material be 2~50nm, be preferably 2~10nm.
Because the thickness of encapsulated layer has only hundreds of nanometers, and is extremely thin, be damaged easily, therefore be provided with protective layer in the outside of encapsulated layer.Except preparing the protective layer with conventional method, a kind of preferred protective layer is that AlN, SiC or adamantine at least a material are the film of 10~1000nm through the thickness that magnetron sputtering, chemical vapour deposition (CVD) or ald form.Another kind of preferred construction is that protective layer is to be coated on the encapsulated layer outside and thickness is the polymeric layer of 10~1000um, is good with 100um thickness.Said polymer is polymethyl methacrylate, PETG, Merlon, Triafol T or polyether sulfone.Can also preferred a kind of structure do; Protective layer is for being attached to encapsulated layer outside rete, and said rete is the sheet material of reeling that at least a material in polymethyl methacrylate, PETG, Merlon, Triafol T or the polyether sulfone constitutes.
The encapsulating structure of organic electroluminescence device of the present invention, depositing temperature is low, can not injure the organic layer of luminescent device, and does not need other organic film-forming apparatus, has practiced thrift equipment investment cost and floor space.Adopt the alternately inorganic film compact structure of preparation of atomic layer deposition method, pin hole is few, can intercept water oxygen effectively and penetrate into device inside.Process layer protective layer protection packaging layer effectively on the encapsulated layer, can further intercept again water, oxygen.
Below in conjunction with embodiment, foregoing of the present invention is remake further detailed description by the accompanying drawing illustrated embodiment.But should this be interpreted as that the scope of the above-mentioned theme of the present invention only limits to following instance.Do not breaking away under the above-mentioned technological thought situation of the present invention, various replacements or change according to ordinary skill knowledge and customary means are made all should comprise within the scope of the invention.
Description of drawings
Fig. 1 is a kind of sketch map of the encapsulating structure of organic electroluminescence device of the present invention.
Fig. 2 is a kind of component sketch map of the encapsulated layer of Fig. 1.
Fig. 3 is the another kind of component sketch map of the encapsulated layer of Fig. 1.
Fig. 4 is the another kind of sketch map of the encapsulating structure of organic electroluminescence device of the present invention.
Embodiment
Embodiment 1:
The encapsulating structure of organic electroluminescence device of the present invention as shown in Figure 1; Comprise the substrate 1 of the organic electroluminescence devices that constitutes by glass; Be provided with anode 2, organic layer 3 and the negative electrode 4 of organic electroluminescence devices in a side of substrate 1; Be provided with encapsulated layer 5 in the outside of said negative electrode 4, described encapsulated layer 5 is the MULTILAYER COMPOSITE membrane structures of at least two kinds of inorganic insulating materials through the atomic layer deposition system alternating deposit.
As shown in Figure 2, after the organic electroluminescence device that will not encapsulate places atomic layer deposition system, carry out the mask plate contraposition; Shelter from the device extraction electrode; Feed high purity inert gas, after vacuumizing, deposit thickness is the Al of 2~5nm on the negative electrode 4 of luminescent device 2O 3Rete is again at Al 2O 3The outer deposit thickness of rete is the ZrO of 2~5nm 2Rete repeats above-mentioned film deposition step 20 times (promptly 20 layers), obtains the Al that thickness is 80~200nm 2O 3/ ZrO 2Film encapsulated layer 5.
Embodiment 2:
As shown in Figure 3, on the basis of embodiment 1, different is that deposit thickness is the Al of 2~5nm on the negative electrode 4 of luminescent device 2O 3Rete is again at Al 2O 3The outer deposit thickness of rete is the Si of 2~5nm 3N 4Rete repeats above-mentioned film deposition step 20 times (promptly 20 layers), obtains the Al that thickness is 80~200nm 2O 3/ Si 3N 4Film encapsulated layer 5.
Embodiment 3:
On the basis of embodiment 1 or 2, substrate 1 is respectively arranged with encapsulated layer 5 for plastics constitute in the outside of negative electrode 4 and the inboard of substrate 1.
Embodiment 4:
As shown in Figure 4, on the basis of embodiment 1 or 2, the outside of encapsulated layer 5 is provided with protective layer 6.Protective layer 6 can be that AlN, SiC or adamantine at least a material are the film of 10~1000nm through the thickness that magnetron sputtering, chemical vapour deposition (CVD) or ald form; Also can be to be coated on encapsulated layer 5 outsides and thickness is the polymeric layer of 10~1000um, said polymer be polymethyl methacrylate, PETG, Merlon, Triafol T or polyether sulfone; Can also be to be attached to encapsulated layer 5 outside retes, said rete be the sheet material of reeling that at least a material in polymethyl methacrylate, PETG, Merlon, Triafol T or the polyether sulfone constitutes.

Claims (10)

1. the encapsulating structure of organic electroluminescence device; Include the substrate (1) of organic electroluminescence devices; Be provided with anode (2), organic layer (3) and the negative electrode (4) of organic electroluminescence devices in a side of substrate (1); It is characterized by: be provided with encapsulated layer (5) in the outside of said negative electrode (4) at least, described encapsulated layer (5) is the MULTILAYER COMPOSITE membrane structures of at least two kinds of inorganic insulating materials through the atomic layer deposition system alternating deposit.
2. the encapsulating structure of organic electroluminescence device as claimed in claim 1 is characterized by: said substrate (1) is glass, metal or plastics.
3. the encapsulating structure of organic electroluminescence device as claimed in claim 2 is characterized by: when substrate (1) during for plastics, described encapsulated layer (5) is provided with respectively in the outside of negative electrode (4) and the inboard of substrate (1).
4. the encapsulating structure of organic electroluminescence device as claimed in claim 1, it is characterized by: the multilayer complex films of said encapsulated layer (5) is made up of 2~50 layers monofilm, and said monofilm is by Al 2O 3, SiO x, Si 3N 4, SiN xO y, AlN, ZrO 2, HfO 2, Ta 2O 5, La 2O 3, ZnO, TaN, TiO 2Or at least two kinds of metabolies formations, wherein Si among the TiN 3N 4In 0<x≤1,0<y≤1, SiO xMiddle x is 1 or 2.
5. the encapsulating structure of organic electroluminescence device as claimed in claim 4, it is characterized by: said monofilm is by Al 2O 3/ ZrO 2, or Al 2O 3/ Si 3N 4, or Al 2O 3/ SiO xConstitute.
6. the encapsulating structure of organic electroluminescence device as claimed in claim 5, it is characterized by: the thickness of every kind of material is 2~50nm in the said monofilm.
7. the encapsulating structure of organic electroluminescence device as claimed in claim 1 is characterized by: be provided with protective layer (6) in the outside of encapsulated layer (5).
8. the encapsulating structure of organic electroluminescence device as claimed in claim 7 is characterized by: said protective layer (6) is the film of 10~1000nm for AlN, SiC or adamantine at least a material through the thickness that magnetron sputtering, chemical vapour deposition (CVD) or ald form.
9. the encapsulating structure of organic electroluminescence device as claimed in claim 7; It is characterized by: said protective layer (6) is for being coated on outside the encapsulated layer (5) and thickness is the polymeric layer of 10~1000um, and said polymer is polymethyl methacrylate, PETG, Merlon, Triafol T or polyether sulfone.
10. the encapsulating structure of organic electroluminescence device as claimed in claim 7; It is characterized by: said protective layer (6) is for being attached to encapsulated layer (5) outside rete, and said rete is the sheet material of reeling that at least a material in polymethyl methacrylate, PETG, Merlon, Triafol T or the polyether sulfone constitutes.
CN2011103633638A 2011-11-16 2011-11-16 Packaging structure of OLED Pending CN102437288A (en)

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102864417A (en) * 2012-08-22 2013-01-09 吉林大学 Method for encapsulating organic devices by passivation layer prepared by electron beam evaporation and atomic layer deposition
CN103715366A (en) * 2013-12-20 2014-04-09 京东方科技集团股份有限公司 OLED film packaging structure, OLED device and display apparatus
CN104078600A (en) * 2013-03-29 2014-10-01 海洋王照明科技股份有限公司 Organic light-emitting diode device and manufacturing method thereof
CN104183769A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emitting diode and preparation method thereof
WO2015043064A1 (en) * 2013-09-27 2015-04-02 京东方科技集团股份有限公司 Display panel, display device and manufacturing method for display panel
CN104716270A (en) * 2015-03-16 2015-06-17 上海和辉光电有限公司 Film packaging structure and organic light-emitting device with same
WO2015165182A1 (en) * 2014-04-29 2015-11-05 京东方科技集团股份有限公司 Packaging structure and packaging method for organic electroluminescent device, and display apparatus
CN105679964A (en) * 2016-03-28 2016-06-15 中国电子科技集团公司第五十五研究所 Organic light-emitting device (OLED) packaging structure and method
CN106058071A (en) * 2016-07-01 2016-10-26 沈阳拓荆科技有限公司 Barrier layer structure of OLED device and preparation method thereof
CN106654039A (en) * 2016-09-27 2017-05-10 上海天马微电子有限公司 Display panel, display device and manufacturing method of display panel
CN107068904A (en) * 2017-04-18 2017-08-18 京东方科技集团股份有限公司 Inorganic encapsulated film, the preparation method of OLED packaging films and related device
CN107240648A (en) * 2017-05-22 2017-10-10 茆胜 Composite package film and preparation method thereof
CN108106748A (en) * 2017-11-09 2018-06-01 中国电子科技集团公司第四十八研究所 A kind of flexibility ablation resistance film and preparation method thereof
US10008689B2 (en) 2013-09-27 2018-06-26 Boe Technology Group Co., Ltd. Display panel, display device and method of manufacturing display panel
CN108649138A (en) * 2018-04-28 2018-10-12 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN108666352A (en) * 2018-05-14 2018-10-16 云谷(固安)科技有限公司 Display panel motherboard, display panel and preparation method thereof
TWI694930B (en) * 2014-07-31 2020-06-01 德商巴斯夫塗料有限公司 Encapsulation structure for an oled display incorporating antireflection properties
WO2020206980A1 (en) * 2019-04-12 2020-10-15 深圳市华星光电半导体显示技术有限公司 Flexible oled display apparatus and preparation method therefor

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Publication number Priority date Publication date Assignee Title
CN102864417A (en) * 2012-08-22 2013-01-09 吉林大学 Method for encapsulating organic devices by passivation layer prepared by electron beam evaporation and atomic layer deposition
CN104078600A (en) * 2013-03-29 2014-10-01 海洋王照明科技股份有限公司 Organic light-emitting diode device and manufacturing method thereof
CN104183769A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emitting diode and preparation method thereof
US10008689B2 (en) 2013-09-27 2018-06-26 Boe Technology Group Co., Ltd. Display panel, display device and method of manufacturing display panel
WO2015043064A1 (en) * 2013-09-27 2015-04-02 京东方科技集团股份有限公司 Display panel, display device and manufacturing method for display panel
US9472784B2 (en) 2013-12-20 2016-10-18 Boe Technology Group Co., Ltd. Packaging structure for OLED having inorganic and organic films with moisture absorbent layers
CN103715366A (en) * 2013-12-20 2014-04-09 京东方科技集团股份有限公司 OLED film packaging structure, OLED device and display apparatus
WO2015165182A1 (en) * 2014-04-29 2015-11-05 京东方科技集团股份有限公司 Packaging structure and packaging method for organic electroluminescent device, and display apparatus
US9362528B2 (en) 2014-04-29 2016-06-07 Boe Technology Group Co., Ltd. Packaging structure and packaging method of organic electroluminescent device, and display device
TWI694930B (en) * 2014-07-31 2020-06-01 德商巴斯夫塗料有限公司 Encapsulation structure for an oled display incorporating antireflection properties
CN104716270A (en) * 2015-03-16 2015-06-17 上海和辉光电有限公司 Film packaging structure and organic light-emitting device with same
US9608235B2 (en) 2015-03-16 2017-03-28 Everdisplay Optronics (Shanghai) Limited Thin film encapsulation structure and organic light emitting device having the same
CN105679964A (en) * 2016-03-28 2016-06-15 中国电子科技集团公司第五十五研究所 Organic light-emitting device (OLED) packaging structure and method
CN106058071A (en) * 2016-07-01 2016-10-26 沈阳拓荆科技有限公司 Barrier layer structure of OLED device and preparation method thereof
CN106654039A (en) * 2016-09-27 2017-05-10 上海天马微电子有限公司 Display panel, display device and manufacturing method of display panel
CN107068904A (en) * 2017-04-18 2017-08-18 京东方科技集团股份有限公司 Inorganic encapsulated film, the preparation method of OLED packaging films and related device
CN107240648A (en) * 2017-05-22 2017-10-10 茆胜 Composite package film and preparation method thereof
CN108106748A (en) * 2017-11-09 2018-06-01 中国电子科技集团公司第四十八研究所 A kind of flexibility ablation resistance film and preparation method thereof
CN108649138A (en) * 2018-04-28 2018-10-12 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN108649138B (en) * 2018-04-28 2020-09-04 武汉华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN108666352A (en) * 2018-05-14 2018-10-16 云谷(固安)科技有限公司 Display panel motherboard, display panel and preparation method thereof
US11050042B2 (en) 2018-05-14 2021-06-29 Yungu (Gu'an) Technology Co., Ltd. Display panel motherboard, display panel and method of manufacturing the same
WO2020206980A1 (en) * 2019-04-12 2020-10-15 深圳市华星光电半导体显示技术有限公司 Flexible oled display apparatus and preparation method therefor

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Application publication date: 20120502