CN104752634A - Processing method of alternate structure thin film packaging layer interface - Google Patents
Processing method of alternate structure thin film packaging layer interface Download PDFInfo
- Publication number
- CN104752634A CN104752634A CN201310753330.3A CN201310753330A CN104752634A CN 104752634 A CN104752634 A CN 104752634A CN 201310753330 A CN201310753330 A CN 201310753330A CN 104752634 A CN104752634 A CN 104752634A
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- China
- Prior art keywords
- functional layer
- plasma
- packaging film
- surface treatment
- alternating structure
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- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title description 13
- 238000003672 processing method Methods 0.000 title description 7
- 239000002346 layers by function Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 34
- 229920006280 packaging film Polymers 0.000 claims abstract description 22
- 239000012785 packaging film Substances 0.000 claims abstract description 22
- 238000004381 surface treatment Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 19
- 239000001301 oxygen Substances 0.000 abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 19
- 238000009832 plasma treatment Methods 0.000 abstract description 15
- 230000003746 surface roughness Effects 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 9
- 230000035699 permeability Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010019233 Headaches Diseases 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100000869 headache Toxicity 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Packages (AREA)
- Wrappers (AREA)
Abstract
The invention relates to a production method of an alternate structure packaging film, which comprises the following steps: growing a functional layer A; treating the surface of the functional layer A by using plasma; growing a functional layer B on the functional layer A after the plasma treatment; and carrying out surface treatment on the functional layer B by using plasma to form a packaging film with a functional layer A/B alternating structure. The surface roughness of the single functional layer in the film with the alternating structure is reduced by the plasma treatment method, so that the pinhole defect of the inorganic functional layer for blocking water and oxygen is reduced, and the packaging quality of the film is improved.
Description
Technical field
The present invention relates to organic assembly film process field, be specifically related to a kind of processing method of alternating structure thin-film package bed boundary.
Background technology
The nearly more than ten years, the organic electronic device fast developments such as OLED, OPV and OFET.For OLED, it has the series of advantages such as luminous efficiency is high, operating voltage is low, light, thin, soft, obtains extensive concern in illumination and display field.But the electrode of organic electronic device is generally active metal, it is very easily oxidized, and the partial function material of device is also comparatively responsive to water oxygen, is easy to and water oxygen generation electrochemical reaction, thus accelerates device aging when devices function, reduces device useful life.Thus need to encapsulate organic assembly, make the steam in each functional layer of device and air, oxygen gas component isolates.
Thin-film package is one of best solution of organic assembly encapsulation.As realized thin-film package with the several cycle organic/inorganic alternating structure of low temperature PECVD method deposition, wherein inorganic thin film has compactness high, plays water oxygen barrier effect; The effect of organic film is the flexibility increasing total.Whole encapsulating structure has very high requirement to inorganic/organic films surface roughness, low surface roughness provides safeguard for next layer function Material growth, in other words, as organic function layer A surface roughness is comparatively large, directly grows above in inorganic functional layer B and just have more defect (as needle pore defect: film surface has the small duct running through film.) organic layer A is more uneven, subsequent thin film growth just also can be uneven, thus more easily produce the dislocation of each interlayer, reduces package quality.Current thin-film package all adopts the method first growing direct growth functional layer B layer after functional layer A layer usually, functional layer A/B layer surface is all without the process further reducing surface roughness, thus the block of restriction encapsulated layer water oxygen improves further, the high quality water oxygen barrier properties thin-film package meeting commercialization requirement is still an international headache.
Summary of the invention
In order to solve above technical problem, the invention provides a kind of production method of alternating structure packaging film, by functional layer is carried out plasma surface treatment solve thinner package film water oxygen block in prior art be difficult to improve, there is the problem of needle pore defect.
A production method for alternating structure packaging film, comprises the steps:
Growth functional layer A;
Plasma surface treatment is carried out to described functional layer A;
Described functional layer A after plasma processing grows functional layer B;
Plasma surface treatment is carried out to described functional layer B, forms the packaging film of functional layer A/B alternating structure.
In technique scheme, described plasma surface treatment is argon plasma surface treatment or helium gas plasma surface treatment, the sample stage temperature 20-120 DEG C of the plasma surface treatment instrument used, plasma process chamber pressure 0.1-10Pa, processing time 1-20min.
In technique scheme, described growing method is any one in plasma enhanced chemical vapor deposition method, chemical gaseous phase depositing process, ald, physical vapor deposition, sputtering or method of evaporating.
In technique scheme, described functional layer uses organic or inorganic material.
In technique scheme, grow the structure that multiple functional layer A/B replaces.
The present invention reduces simple function layer surface roughness in alternating structure film by the method for plasma treatment, plasma is made up of electronics, ion and a large amount of uncharged free radical, charged ion is meeting accelerating impact functional layer surface under the effect of biasing electric field, play the effect of sputtering, this effect can make functional layer surface more smooth, reduces roughness, thus also reduces the needle pore defect of functional layer, improve the water oxygen blocking capability of functional layer, improve thin-film package quality.
Accompanying drawing explanation
The production method process flow diagram of the alternating structure packaging film that Fig. 1 provides for the embodiment of the present invention.
Functional layer surface roughness before the plasma treatment that Fig. 2 provides for the embodiment of the present invention.
Functional layer surface roughness after the plasma treatment that Fig. 3 provides for the embodiment of the present invention.
Water oxygen permeability datagram after the plasma treatment that Fig. 4 provides for the embodiment of the present invention.
Water oxygen permeability datagram before the plasma treatment that Fig. 5 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, technical scheme of the present invention is described in detail.
Embodiment 1
See Fig. 1, the embodiment of the present invention provides a kind of for alternating structure thin-film package interface processing method, and the method comprises the steps:
Step 1, using plasma strengthens chemical gaseous phase depositing process growth SiO
xc
yh
zfunctional layer A;
Step 2, with Ar plasma to SiO
xc
yh
zfunctional layer A surface processes, the sample stage temperature of plasma surface treatment instrument 40 DEG C, plasma process chamber pressure 5Pa, processing time 10min, Ar plasma treatment front and rear surfaces roughness generation significant change, specifically see Fig. 2 and 3, surface roughness is by the R before plasma treatment
a=1.05nm is reduced to R
a=0.35nm, the growth for next one functional layer provides safeguard by the reduction of organic surface roughness;
Step 3, functional layer A after plasma processing grows functional layer B;
Step 4, carries out surface treatment with plasma to power layer B, and concrete processing method is with step 2;
Step 5, functional layer B after plasma processing utilizes plasma enhanced chemical vapor deposition method grow functional layer A.
In like manner, repeat step 2 and 3, form the packaging film of functional layer A/B/A/B alternating structure.
Test the packaging film quality of above-described A/B/A/B alternating structure, measure the water oxygen permeability of packaging film, same thickness film water oxygen permeability is lower, and defect is fewer, and water oxygen barrier properties is better.Average water oxygen permeability through plasma treatment is reduced to 4.38mg/cm
2day, specifically as shown in Figure 4; The average water oxygen permeability of the A/B/A/B alternating structure packaging film without plasma treatment under similarity condition is 0.43g/cm
2day, as shown in Figure 5.
Embodiment 2
See Fig. 1, the embodiment of the present invention provides a kind of for alternating structure thin-film package interface processing method, and the method comprises the steps:
Step 1, using plasma strengthens chemical gaseous phase depositing process growth SiO
xc
yh
zfunctional layer A;
Step 2, with He plasma to SiO
xc
yh
zfunctional layer A surface processes, the sample stage temperature of plasma surface treatment instrument 80 DEG C, plasma process chamber pressure 6Pa, and processing time 13min, He plasma treatment front and rear surfaces roughness is by the R before plasma treatment
a=1.12nm is reduced to R
a=0.40nm;
Step 3, functional layer A after plasma processing grows functional layer B;
Step 4, carries out surface treatment with plasma to power layer B, and concrete processing method is with step 2;
Step 5, functional layer B after plasma processing utilizes plasma enhanced chemical vapor deposition method grow functional layer A.
In like manner, repeat step 2 and 3, form the packaging film of functional layer A/B/A/B alternating structure.
The packaging film quality of above-described A/B/A/B alternating structure is tested, measures the water oxygen permeability of packaging film, through the average water oxygen permeability 4.41mg/cm of plasma treatment
2day; The average water oxygen permeability of the A/B/A/B alternating structure packaging film without plasma treatment under similarity condition is 0.45g/cm
2day.
The present invention uses plasma surface treatment instrument to carry out plasma surface treatment first in the functional layer forming process of organic assembly packaging film, by plasma, sputtering polishing is carried out to functional layer, roughness between the joint face of packaging film is significantly reduced, reduce the needle pore defect of functional layer, improve the water oxygen blocking capability of functional layer, improve thin-film package quality.The plasma process chamber pressure 0.1-10Pa used in the present invention, during too little pressure, gas density is little, and the plasma density of generation is also little, and uneven to functional layer sputtering, therefore the roughness of functional layer also can be uneven; May cause equipment can not normal build-up of luminance when pressure is excessive, affect treatment effeciency.The processing time 1-20min used, reducing with process time lengthening functional layer surface roughness, but can increase again more than roughness after 20min, there is point corrosion in surface.
It should be noted last that, above embodiment is only in order to illustrate implementer's case of this material and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (5)
1. a production method for alternating structure packaging film, is characterized in that: comprise the steps:
Growth functional layer A;
Plasma surface treatment is carried out to described functional layer A;
Described functional layer A after plasma processing grows functional layer B;
Plasma surface treatment is carried out to described functional layer B, forms the packaging film of functional layer A/B alternating structure.
2. the production method of alternating structure packaging film as claimed in claim 1, it is characterized in that: described plasma surface treatment is argon plasma surface treatment or helium gas plasma surface treatment, the sample stage temperature 20-120 DEG C of the plasma surface treatment instrument used, plasma process chamber pressure 0.1-10Pa, processing time 1-20min.
3. the production method of alternating structure packaging film as claimed in claim 1, is characterized in that: described growing method is any one in plasma enhanced chemical vapor deposition method, chemical gaseous phase depositing process, ald, physical vapor deposition, sputtering or method of evaporating.
4. the production method of alternating structure packaging film as claimed in claim 1, is characterized in that: described functional layer uses organic or inorganic material.
5. the production method of alternating structure packaging film as claimed in claim 1, is characterized in that: grow the structure that multiple functional layer A/B replaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753330.3A CN104752634A (en) | 2013-12-31 | 2013-12-31 | Processing method of alternate structure thin film packaging layer interface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753330.3A CN104752634A (en) | 2013-12-31 | 2013-12-31 | Processing method of alternate structure thin film packaging layer interface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752634A true CN104752634A (en) | 2015-07-01 |
Family
ID=53591999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310753330.3A Pending CN104752634A (en) | 2013-12-31 | 2013-12-31 | Processing method of alternate structure thin film packaging layer interface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104752634A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576678A (en) * | 2019-02-14 | 2019-04-05 | 拓米(成都)应用技术研究院有限公司 | A kind of preparation method of metal-macromolecule multi-layer compound film |
| CN110943180A (en) * | 2019-11-18 | 2020-03-31 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED device packaging structure and packaging method thereof |
Citations (5)
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|---|---|---|---|---|
| US20050116637A1 (en) * | 2003-10-16 | 2005-06-02 | Pioneer Corporation | Organic electroluminescence display panel and fabrication method thereof |
| CN101228217A (en) * | 2005-07-20 | 2008-07-23 | 3M创新有限公司 | Moisture barrier coatings |
| US20090029183A1 (en) * | 2007-07-25 | 2009-01-29 | Kenji Kano | Barrier film substrate and method for producing same, and organic device |
| US20090297771A1 (en) * | 2008-05-30 | 2009-12-03 | Shigehide Ito | Barrier laminate, gas barrier film, device, and method for producing barrier laminate |
| CN103258955A (en) * | 2012-02-20 | 2013-08-21 | 中国科学院微电子研究所 | Encapsulation method of organic electronic device |
-
2013
- 2013-12-31 CN CN201310753330.3A patent/CN104752634A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050116637A1 (en) * | 2003-10-16 | 2005-06-02 | Pioneer Corporation | Organic electroluminescence display panel and fabrication method thereof |
| CN101228217A (en) * | 2005-07-20 | 2008-07-23 | 3M创新有限公司 | Moisture barrier coatings |
| US20090029183A1 (en) * | 2007-07-25 | 2009-01-29 | Kenji Kano | Barrier film substrate and method for producing same, and organic device |
| US20090297771A1 (en) * | 2008-05-30 | 2009-12-03 | Shigehide Ito | Barrier laminate, gas barrier film, device, and method for producing barrier laminate |
| CN103258955A (en) * | 2012-02-20 | 2013-08-21 | 中国科学院微电子研究所 | Encapsulation method of organic electronic device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576678A (en) * | 2019-02-14 | 2019-04-05 | 拓米(成都)应用技术研究院有限公司 | A kind of preparation method of metal-macromolecule multi-layer compound film |
| CN110943180A (en) * | 2019-11-18 | 2020-03-31 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED device packaging structure and packaging method thereof |
| US11943954B2 (en) | 2019-11-18 | 2024-03-26 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Encapsulation structure and encapsulation method for flexible organic light-emitting diode device |
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Application publication date: 20150701 |