CN102299119A - Method for packaging photoelectronic device - Google Patents
Method for packaging photoelectronic device Download PDFInfo
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- CN102299119A CN102299119A CN2011101325897A CN201110132589A CN102299119A CN 102299119 A CN102299119 A CN 102299119A CN 2011101325897 A CN2011101325897 A CN 2011101325897A CN 201110132589 A CN201110132589 A CN 201110132589A CN 102299119 A CN102299119 A CN 102299119A
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- Prior art keywords
- opto
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- electronic device
- vinyl ether
- cured resin
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 title abstract 6
- 239000011347 resin Substances 0.000 claims abstract description 63
- 229920005989 resin Polymers 0.000 claims abstract description 63
- 239000003085 diluting agent Substances 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- -1 triarylsulfonium hexafluoroantimonates Chemical class 0.000 claims abstract description 23
- 239000004593 Epoxy Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 41
- 230000005693 optoelectronics Effects 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 22
- 239000005864 Sulphur Substances 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 22
- 238000006735 epoxidation reaction Methods 0.000 claims description 22
- 125000005908 glyceryl ester group Chemical group 0.000 claims description 22
- 238000012856 packing Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 6
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical class OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 claims description 4
- CYIGRWUIQAVBFG-UHFFFAOYSA-N 1,2-bis(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOCCOC=C CYIGRWUIQAVBFG-UHFFFAOYSA-N 0.000 claims description 4
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229960000834 vinyl ether Drugs 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- BLTXWCKMNMYXEA-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethoxy)ethene Chemical compound FC(F)=C(F)OC(F)(F)F BLTXWCKMNMYXEA-UHFFFAOYSA-N 0.000 claims description 2
- OZCMOJQQLBXBKI-UHFFFAOYSA-N 1-ethenoxy-2-methylpropane Chemical compound CC(C)COC=C OZCMOJQQLBXBKI-UHFFFAOYSA-N 0.000 claims description 2
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- PGYJSURPYAAOMM-UHFFFAOYSA-N 2-ethenoxy-2-methylpropane Chemical compound CC(C)(C)OC=C PGYJSURPYAAOMM-UHFFFAOYSA-N 0.000 claims description 2
- GCYHRYNSUGLLMA-UHFFFAOYSA-N 2-prop-2-enoxyethanol Chemical compound OCCOCC=C GCYHRYNSUGLLMA-UHFFFAOYSA-N 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- ZBRBBAPENHGFST-UHFFFAOYSA-N C1(=CC=CC=C1)O.C(C1=CC=CC=C1)C=1C(=C(C=CC1)CC1=CC=CC=C1)CC1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)O.C(C1=CC=CC=C1)C=1C(=C(C=CC1)CC1=CC=CC=C1)CC1=CC=CC=C1 ZBRBBAPENHGFST-UHFFFAOYSA-N 0.000 claims description 2
- JJWZYXJFPMQGMT-UHFFFAOYSA-N C=CC.C(=C)OCC Chemical group C=CC.C(=C)OCC JJWZYXJFPMQGMT-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 2
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 claims description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- 150000004292 cyclic ethers Chemical class 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical group COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 claims description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 230000005622 photoelectricity Effects 0.000 claims description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 claims description 2
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005987 sulfurization reaction Methods 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001567 vinyl ester resin Polymers 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000005022 packaging material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 103
- 229910052757 nitrogen Inorganic materials 0.000 description 31
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 18
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 18
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 18
- 239000004926 polymethyl methacrylate Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005401 electroluminescence Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 150000003254 radicals Chemical class 0.000 description 8
- 230000027756 respiratory electron transport chain Effects 0.000 description 8
- LOIBXBUXWRVJCF-UHFFFAOYSA-N 4-(4-aminophenyl)-3-phenylaniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1C1=CC=CC=C1 LOIBXBUXWRVJCF-UHFFFAOYSA-N 0.000 description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 7
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Abstract
The invention discloses a method for packaging a photoelectronic device. The method is used for packaging a prepared device by a film packaging method, wherein the photoelectronic device is covered by a film packaging layer. The method is characterized in that the film packaging layer is formed by alternate overlap of inorganic film packaging material thin layers and ultraviolet photo-cured resin thin layers, wherein the ultraviolet photo-cured resin comprises the following components: epoxy conjugated octadecatriene-9,11,13-triglyceride, a reaction diluent and triarylsulfonium hexafluoroantimonates. The method has the following beneficial effects: the oxygen and water in the ambient environment can be effectively blocked and the method is beneficial to improvement of the device stability and prolonging of the device life. Meanwhile, the method has the characteristics of simple preparation process and low cost.
Description
Technical field
The present invention relates to the photoelectron technology field, be specifically related to a kind of method for packing of opto-electronic device.
Background technology
Photoelectron technology is the very high industry of scientific and technological content that develops rapidly after microelectric technique.Along with the fast development of photoelectron technology, photoelectron products such as light-emitting diode, Organic Light Emitting Diode, solar cell, thin-film transistor are all full-fledged gradually, and they have improved people's life greatly.Simultaneously, opto-electronic information technology has also been created growing great market in the extensive use of social life every field, and the competition of the field of opto-electronic information just launches at world wide.
Present opto-electronic device, include organic electroluminescence devices, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors, ultraviolet light detector, infrared detector etc., the particularly fast development of organic optoelectronic device, be fit to global social low-carbon environment-friendly, the tool development potentiality of green living and the opto-electronic device of application market, its part mostly are to adopt the organic material preparation on rigidity (as glass or silicon chip) or flexible base, board.Though they have good device performance and since device to external world environment have very strong sensitiveness, especially in organic optoelectronic device, the water in the atmospheric environment and oxygen etc. become branch's negative effect serious to material production.Can not make that device performance reduces gradually after thereby packaged device is placed in atmospheric environment, even lose performance fully.Oxygen makes organic material produce oxidation and can generate carbonyls, and this compound is serious quencher, and in addition, material is rotten will to form blackspot, and follows device performance to descend.The influence of steam is more apparent, and its main failure mode is the hydrolysis of conductive electrode to the organic layer compound, and stability is descended greatly.For this reason, degeneration and the inefficacy of device in the long-term work process is inhibited, steady operation reaches enough life-spans, must encapsulate device, and adopt which kind of encapsulating material and which kind of method for packing also just to become another break-through point of dealing with problems.
The present invention adopts the thin-film package technology, proposes a kind of low cost and technology simple package method, can improve the iris action of device to oxygen and steam etc. greatly, reduces technology difficulty and improves device stability.By solving above-mentioned these problems, will make opto-electronic device obtain using more widely and development more fast.
Summary of the invention
Technical problem to be solved by this invention is the method for packing how a kind of opto-electronic device is provided, this method for packing has solved the sensitive question of opto-electronic device to water and oxygen etc., can enhance device to the obstructing capacity of water and oxygen, the stability and the life-span of having improved device.
Technical problem proposed by the invention is to solve like this: the method for packing that a kind of opto-electronic device is provided, adopt film encapsulation method to encapsulate to opto-electronic device, thin-film encapsulation layer coats opto-electronic device, it is characterized in that, described thin-film encapsulation layer replaces overlapping the composition by inorganic thin film encapsulating material thin layer and UV-cured resin thin layer with cycle n, 1≤n≤20 wherein, described UV-cured resin comprises the component of following mass percent:
Reaction diluent 5～15%
Triaryl sulphur type hexafluoro antimonic salt 5～10%.
Method for packing according to opto-electronic device provided by the present invention, it is characterized in that, described reaction diluent is active epoxy diluent resin or cyclic ethers or cyclic lactone or vinyl ether monomers, vinyl ether monomers comprises 1,2, the 3-propanetriol-diglycidyl-ether, the triethylene glycol divinyl ether, 1,4-butanediol vinyl ethers, cyclohexyl vinyl ether, perfluoro methyl vinyl ether, the perfluor n-propyl vinyl ether, IVE, hydroxy butyl vinyl ether, vinyl ethyl ether, ethyl vinyl ether, the ethyl vinyl ether propylene, ethylene glycol monoallyl ether, hydroxy butyl vinyl ether, butyl vinyl ether, chlorotrifluoroethylene, triethylene glycol divinyl ether, methoxy ethylene, the vinyl n-butyl ether, dodecyl vinyl, cyclohexyl vinyl ether, tribenzyl-benzene phenol polyethenoxy base ether, tetrafluoroethene-perfluoro propyl vinyl ether, tetrafluoroethene-perfluoro propyl vinyl ether, tert-Butyl vinyl ether, the active epoxy diluent resin comprises 3,4-epoxy radicals hexahydrobenzoid acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters, bisphenol A type epoxy resin (EP), epoxy acrylate, epoxy vinyl ester, acrylic acid epoxy ester, the methacrylic acid epoxy-ester, water-soluble itaconic acid epoxy ester resin.
Method for packing according to opto-electronic device provided by the present invention, it is characterized in that, described inorganic thin film encapsulating material is metal oxide or metal sulfide or metal nitride, metal oxide comprises calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al, chrome green, tin ash, nickel oxide, antimony pentoxide, metal sulfide comprises titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, three sulfurations, two lanthanums, cerium sulphide, the curing zirconium, metal nitride comprises silicon nitride, aluminium nitride.
Method for packing according to opto-electronic device provided by the present invention is characterized in that, specifically may further comprise the steps:
1. prepare opto-electronic device;
2. on prepared opto-electronic device, prepare the inorganic encapsulated material thin-layer;
3. prepare the UV-cured resin thin layer on the inorganic encapsulated material thin-layer, described UV-cured resin comprises the component of following mass percent:
Reaction diluent 5～15%
Triaryl sulphur type hexafluoro antimonic salt 5～10%;
4. ultraviolet light polymerization being carried out on the rigid substrates surface handled 30 seconds;
5. to the device behind the ultraviolet light polymerization, continue repeating step operation 2., 3. and 4., repeat n-1 time 1≤n≤20 continuously;
6. the life-span of device and other parameters after the test package.
Method for packing according to opto-electronic device provided by the present invention, it is characterized in that the encapsulation foil of described inorganic encapsulated material and UV-cured resin is by vacuum evaporation, ion cluster bundle deposition, ion plating, dc sputtering deposition, the RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, the catalyst chemical vapour deposition (CVD), magnetron sputtering, inkjet printing, electroplate, spraying, spin coating, dip-coating, one or several modes in roller coat and the LB film and forming.
Method for packing according to opto-electronic device provided by the present invention, it is characterized in that, described opto-electronic device is between a kind of photoelectricity, electric between and can carry out the device of signal and power conversion between the electric light, comprise organic electroluminescent LED, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors, photo-detector.
Beneficial effect of the present invention: in the encapsulating material of opto-electronic device, organic encapsulating material is comparatively rare, the invention provides a kind of routine, effective organic encapsulating material, because organic encapsulating material possesses good ultraviolet sensitivity characteristic, behind the preparation opto-electronic device, substrate is carried out suitable ultraviolet and handle.The organic ultraviolet light-cured resin has good curing agent, stability, adhesion strength, light transmittance and high-purity, and the various preferred proportions and the technological parameter that provide among the present invention are provided, and can obtain more excellent device performance.Encapsulated layer of the present invention adopts inorganic encapsulated material thin-layer and the overlapping composition of described organic ultraviolet light-cured resin interlaminate, not only can reduce cost, and simplifies technology, importantly can improve device stability well, prolongs device lifetime.
Description of drawings
Fig. 1 is the opto-electronic device encapsulating structure schematic diagram of embodiment 1,2,3,4,5,6 provided by the present invention;
Fig. 2 is the opto-electronic device encapsulating structure schematic diagram of embodiment 7,8,9,10,11,12 provided by the present invention;
Fig. 3 is the opto-electronic device encapsulating structure schematic diagram of embodiment 13,14,15,16,17,18 provided by the present invention;
Fig. 4 is comparative example's 1 a provided by the present invention optoelectronic device structure schematic diagram;
Wherein, the 1st, opto-electronic device, 11, substrate, 12, anode layer, 13, hole transmission layer, 14, electron transfer layer, 15, cathode layer, 16, the electron donor layer, 17, the electron acceptor layer, 18, hearth electrode, 19, insulating barrier, 20, carrier blocking layers, 23, top electrode, the 2nd, thin-film encapsulation layer of the present invention is alternately overlapped with certain periodicity n by inorganic encapsulated material thin-layer 21 and UV-cured resin thin layer 22.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described:
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 20, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2O
3(200nm)/UV-cured resin (100nm)]
20
The preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached the high vacuum evaporation chamber, the pressure that keeps organic chamber and wire chamber respectively is 3.0 * 10
-4Pa and 3.0 * 10
-3Below the Pa, utilize the high vacuum vapor deposition method to prepare each organic function layer and cathodic metal layer;
3. to the organic electroluminescence device of above-mentioned preparation, utilize plasma enhanced chemical meteorology deposition (hereinafter to be referred as PECVD) method to prepare inorganic thin film encapsulating material Al
2O
3, the thickness of deposition is 200nm;
4. device is reached in the cavity with UV-cured resin, and the spraying UV-cured resin, the thickness of spraying is 100nm;
5. device being carried out ultraviolet light polymerization handled 30 seconds;
6. repeat above-mentioned steps 3.～5., the manufacturing cycle number is the inorganic thin film encapsulating material of (n-1) and the thin layer that UV-cured resin is alternately formed again;
7. the life-span of test component and parameters thereof.
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 16, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2O
3(200nm)/UV-cured resin (100nm)]
16
The preparation method is similar to embodiment 1.
Embodiment 3
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2O
3(200nm)/UV-cured resin (100nm)]
12
The preparation method is similar to embodiment 1.
Embodiment 4
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 8, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Si
3N
4(500nm)/UV-cured resin (500nm)]
8
The preparation method is similar to embodiment 1.
Embodiment 5
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 4, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2O
3(500nm)/UV-cured resin (500nm)]
4
The preparation method is similar to embodiment 1.
Embodiment 6
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 1, device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Si
3N
4(500nm)/UV-cured resin (500nm)]
1
Embodiment 7
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 20, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2O
3(100nm)/UV-cured resin (80nm)]
20
The preparation method is similar to embodiment 1.
Embodiment 8
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 16, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2O
3(100nm)/UV-cured resin (80nm)]
16
The preparation method is similar to embodiment 1.
Embodiment 9
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is Al
2O
3, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2O
3(100nm)/UV-cured resin (80nm)]
12
The preparation method is similar to embodiment 1.
Embodiment 10
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 20, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
8
The preparation method is similar to embodiment 1.
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 16, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
4
The preparation method is similar to embodiment 1.
As shown in Figure 2,1 is the organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
1
The preparation method is similar to embodiment 1.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 20, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3N
4(200nm)/UV-cured resin (100nm)]
20
The preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached the high vacuum evaporation chamber, the pressure that keeps organic chamber and wire chamber respectively is 3.0 * 10
-4Pa and 3.0 * 10
-3Below the Pa, utilize the high vacuum vapor deposition method to prepare each organic function layer and cathodic metal layer;
3. to the OTFT device of above-mentioned preparation, utilize plasma enhanced chemical meteorology deposition (hereinafter to be referred as PECVD) method to prepare inorganic thin film encapsulating material Si
3N
4, the thickness of deposition is 200nm;
4. device is reached in the cavity with UV-cured resin, and the spraying UV-cured resin, the thickness of spraying is 100nm;
5. device being carried out ultraviolet light polymerization handled 30 seconds;
6. repeat above-mentioned steps 3.～5., the manufacturing cycle number is the inorganic thin film encapsulating material of (n-1) and the thin layer that UV-cured resin is alternately formed again;
7. the life-span of test component and parameters thereof.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 16, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3N
4(200nm)/UV-cured resin (100nm)]
16
The preparation method is similar to embodiment 13.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is Si
3N
4, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3N
4(200nm)/UV-cured resin (100nm)]
12
The preparation method is similar to embodiment 13.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 75% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 15% reaction diluent and 10% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
8
The preparation method is similar to embodiment 13.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 82% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 10% reaction diluent and 8% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
4
The preparation method is similar to embodiment 13.
As shown in Figure 3,1 is the OTFT device, and hearth electrode 18 is ITO, and insulating barrier 19 is polymethyl methacrylate (PMMA), and carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic thin film encapsulating material layer 21 is SiO
2, UV-cured resin 22 comprises 90% epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester, 5% reaction diluent and 5% triaryl sulphur type hexafluoro microcosmic salt, and periodicity n is 12, device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
1
The preparation method is similar to embodiment 13.
The comparative example 1
As shown in Figure 4,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, and N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is the Mg:Ag alloy, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)
The preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached the high vacuum evaporation chamber, the pressure that keeps organic chamber and wire chamber respectively is 3.0 * 10
-4Pa and 3.0 * 10
-3Below the Pa, utilize the high vacuum vapor deposition method to prepare each organic function layer and cathodic metal layer;
3. the life-span of test component and parameters thereof.
Table 1 is the performance comparison in the opto-electronic device life-span of comparative example 1 and embodiment 1,2,3,4,5,6.
Table 1
Claims (6)
1. the method for packing of an opto-electronic device, adopt film encapsulation method to encapsulate to opto-electronic device, coat opto-electronic device with thin-film encapsulation layer, it is characterized in that, described thin-film encapsulation layer replaces overlapping the composition by inorganic thin film encapsulating material thin layer and UV-cured resin thin layer with cycle n, 1≤n≤20 wherein, described UV-cured resin comprises the component of following mass percent:
Epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester 75～90%
Reaction diluent 5～15%
Triaryl sulphur type hexafluoro antimonic salt 5～10%.
2. the method for packing of opto-electronic device according to claim 1, it is characterized in that, described reaction diluent is active epoxy diluent resin or cyclic ethers or cyclic lactone or vinyl ether monomers, vinyl ether monomers comprises 1,2, the 3-propanetriol-diglycidyl-ether, the triethylene glycol divinyl ether, 1,4-butanediol vinyl ethers, cyclohexyl vinyl ether, perfluoro methyl vinyl ether, the perfluor n-propyl vinyl ether, IVE, hydroxy butyl vinyl ether, vinyl ethyl ether, ethyl vinyl ether, the ethyl vinyl ether propylene, ethylene glycol monoallyl ether, hydroxy butyl vinyl ether, butyl vinyl ether, chlorotrifluoroethylene, triethylene glycol divinyl ether, methoxy ethylene, the vinyl n-butyl ether, dodecyl vinyl, cyclohexyl vinyl ether, tribenzyl-benzene phenol polyethenoxy base ether, tetrafluoroethene-perfluoro propyl vinyl ether, tetrafluoroethene-perfluoro propyl vinyl ether, tert-Butyl vinyl ether, the active epoxy diluent resin comprises 3,4-epoxy radicals hexahydrobenzoid acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters, bisphenol A type epoxy resin (EP), epoxy acrylate, epoxy vinyl ester, acrylic acid epoxy ester, the methacrylic acid epoxy-ester, water-soluble itaconic acid epoxy ester resin.
3. the method for packing of opto-electronic device according to claim 1, it is characterized in that, described inorganic thin film encapsulating material is metal oxide or metal sulfide or metal nitride, metal oxide comprises calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al, chrome green, tin ash, nickel oxide, antimony pentoxide, metal sulfide comprises titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, three sulfurations, two lanthanums, cerium sulphide, the curing zirconium, metal nitride comprises silicon nitride, aluminium nitride.
4. according to the method for packing of the arbitrary described opto-electronic device of claim 1～3, it is characterized in that, specifically may further comprise the steps:
1. prepare opto-electronic device;
2. on prepared opto-electronic device, prepare the inorganic encapsulated material thin-layer;
3. prepare the UV-cured resin thin layer on the inorganic encapsulated material thin-layer, described UV-cured resin comprises the component of following mass percent:
Epoxidation 18 carbon conjugated trienes-9,11,13-acid glyceryl ester 75～90%
Reaction diluent 5～15%
Triaryl sulphur type hexafluoro antimonic salt 5～10%;
4. ultraviolet light polymerization being carried out on the rigid substrates surface handled 30 seconds;
5. to the device behind the ultraviolet light polymerization, continue repeating step operation 2., 3. and 4., repeat n-1 time 1≤n≤20 continuously;
6. the life-span of device and other parameters after the test package.
5. the method for packing of opto-electronic device according to claim 4, it is characterized in that the encapsulation foil of described inorganic encapsulated material and UV-cured resin is by vacuum evaporation, ion cluster bundle deposition, ion plating, dc sputtering deposition, the RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, the catalyst chemical vapour deposition (CVD), magnetron sputtering, inkjet printing, electroplate, spraying, spin coating, dip-coating, one or several modes in roller coat and the LB film and forming.
6. the method for packing of opto-electronic device according to claim 1, it is characterized in that, described opto-electronic device is between a kind of photoelectricity, electric between and can carry out the device of signal and power conversion between the electric light, comprise organic electroluminescent LED, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors, photo-detector.
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| WO2021131790A1 (en) * | 2019-12-27 | 2021-07-01 | 三井化学株式会社 | Curable composition and organic el display device |
| JPWO2021131790A1 (en) * | 2019-12-27 | 2021-07-01 |
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