CN102842683A - Organic electroluminescence device and manufacturing method thereof - Google Patents
Organic electroluminescence device and manufacturing method thereof Download PDFInfo
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- CN102842683A CN102842683A CN2011101682216A CN201110168221A CN102842683A CN 102842683 A CN102842683 A CN 102842683A CN 2011101682216 A CN2011101682216 A CN 2011101682216A CN 201110168221 A CN201110168221 A CN 201110168221A CN 102842683 A CN102842683 A CN 102842683A
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Abstract
The invention relates to an organic electroluminescence device. The organic electroluminescence device comprises an anode conducting substrate, a light-emitting layer, a cathode, and at least one layer of packaging film, wherein the anode conducting substrate, the light-emitting layer and the cathode are stacked in sequence; the packaging films comprise a silicon-oxygen compound film formed on the cathode, a nitrogen-silicon compound film formed on the silicon-oxygen compound film, and an elementary substance film formed on the nitrogen-silicon compound film and formed by metal or like metal of sulfur group or nitrogen group. According to the organic electroluminescence device, the high water and oxygen resistance of the silicon-oxygen compound film, the nitrogen-silicon compound film and the elementary substance film is made full use of, and the erosion of active substances such as external water, oxygen and the like on the organic electroluminescence device is effectively reduced, so that the organic function materials and the electrodes of the device are effectively protected, and the service life of the organic electroluminescence device is remarkably prolonged. In addition, the invention further relates to a manufacturing method for the organic electroluminescence device.
Description
[technical field]
The present invention relates to field of photoelectric technology, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
[background technology]
Organic electroluminescence device (OLED) is though still be in development; But its excellent performance; Not only possess characteristics such as flexible, softness, burrow arbitrarily on like the OLED of candy wrapper thin, also harmless its kept normally luminous performance; Even can cut arbitrarily, therefore also can avoid bulb and situation such as break and take place.
In addition, with regard to technological layer, light-emitting diode (LED) caloric value is big, need cooling mechanism, but OLED does not need.Discover, the OLED lamp lighted with fluorescent lamp that the fluorescent lamp temperature can be increased to 50 ℃ from room temperature, and the OLED lamp light the back temperature be 30 ℃ only from 20 ℃ of risings, can exempt the danger that the user scalds one's hand, meet security consideration.
But traditional organic electroluminescence device ubiquity short defective in useful life has limited its further application.
[summary of the invention]
Based on this, be necessary to provide a kind of useful life than long organic electroluminescence device and preparation method thereof.
A kind of organic electroluminescence device; Comprise the anode conducting substrate, luminescent layer and the negative electrode that stack gradually; In addition; This organic electroluminescence device also comprises encapsulating film, said encapsulating film comprises the silicon oxide compound film that is formed on the said negative electrode, be formed on the nitrogen silicon compound film on the said silicon oxide compound film and be formed on the said nitrogen silicon compound film by the metal of sulphur system or nitrogen system or the simple substance film that metalloid forms.
Preferably, said silicon oxide compound is SiO or SiO
2Said nitrogen silicon compound is SiN or Si
3N
4The metal or the metalloid of said sulphur system or nitrogen system are Se, Te or Sb.
Preferably, said silicon oxide compound film thickness is 100～150nm; Said nitrogen silicon compound film thickness is 100～150nm; The thickness of said simple substance film is 100～150nm.
Preferably; This organic electroluminescence device also comprises the PETG film that is coated on the said simple substance film and covers said luminescent layer, negative electrode and encapsulating film, and said PETG film engages with said anode conducting base plate seals.
Preferably, this organic electroluminescence device also comprises the Al film that covers on the said PETG film.
Preferably, this organic electroluminescence device also comprises hole injection layer and the hole transmission layer that is formed on successively between said anode conducting substrate and the said luminescent layer and is formed on electron transfer layer and the electron injecting layer between said luminescent layer and the negative electrode successively.
Above-mentioned organic electroluminescence device makes full use of silicon oxide compound, nitrogen silicon compound, the high water resistant of simple substance film, oxygen resistance; Effectively reduce the erosion of external water, oxygen isoreactivity material to organic electroluminescence device; Thereby organic functional material and electrode to device form effective protection, significantly improve the life-span of organic electroluminescence device.
A kind of manufacture method of organic electroluminescence device comprises the steps:
The anode pattern of preparation organic electroluminescence device forms the anode conducting substrate on electrically-conductive backing plate;
Depositing light emitting layer and negative electrode successively on said anode conducting substrate;
Depositing silicon oxygen compound film and nitrogen silicon compound film successively on said negative electrode;
The metal of deposition sulphur system or nitrogen system or metalloid form simple substance film film on said nitrogen silicon compound film.
Preferably, said silicon oxide compound film be thickness 100～150nm SiO film or SiO
2Film;
SiN film or Si that said nitrogen silicon compound film is thickness 100～150nm
3N
4Film;
The Se film that said simple substance film is thickness 100～150nm, Te film or Sb film.
Preferably; Above-mentioned manufacture method also is included in and applies the PETG film that contains the Al film, the step that makes said PETG film cover said luminescent layer, negative electrode and encapsulating film and dock with said anode conducting base plate seals on the said simple substance film.
Preferably, above-mentioned manufacture method also is included in the step that forms hole injection layer and hole transmission layer between said anode conducting substrate and the said luminescent layer successively and between said luminescent layer and negative electrode, form electron transfer layer and electron injecting layer successively.
The manufacture method of above-mentioned organic electroluminescence device, the encapsulating material of employing is cheap, and preparation technology is simple, is prone to large-area preparation, and the organic electroluminescence device that makes significantly improves useful life.
[description of drawings]
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the structural representation of the organic electroluminescence device of another execution mode;
Fig. 3 is the correlation curve figure in useful life of the organic electroluminescence device of embodiment 1, embodiment 2 and embodiment 3.
[embodiment]
Below main engage accompanying drawing and specific embodiment is done further detailed explanation to organic electroluminescence device and preparation method thereof.
As shown in Figure 1, the organic electroluminescence device 100 of an execution mode comprises the anode conducting substrate 110, luminescent layer 120 and the negative electrode 130 that stack gradually.The organic electroluminescence device 100 of this execution mode also comprises one deck encapsulating film 140.
Anode conducting substrate 110 has conducting glass substrate or organic PET (PETG) film substrate of anode pattern for surface etch.
Encapsulating film 140 comprises the silicon oxide compound film 142 that is formed on the negative electrode 130, be formed on the nitrogen silicon compound film 144 on the silicon oxide compound film 142 and be formed on the nitrogen silicon compound film 144 by the metal of sulphur system or nitrogen system or the simple substance film 146 that metalloid forms.
The silicon oxide compound of this execution mode is SiO or SiO
2The nitrogen silicon compound is SiN or Si
3N
4The metal or the metalloid of sulphur system or nitrogen system can be preferably Se, Te or Sb for metal or metalloids such as As, Se, Te, Sb or Po.And the silicon oxide compound film thickness is 100～150nm; Nitrogen silicon compound film thickness is 100～150nm; The thickness of simple substance film is 100～150nm.
In addition, the organic electroluminescence device 100 of this execution mode also comprises the PET film 150 that is coated on the simple substance film 146 and covers luminescent layer 120, negative electrode 130 and encapsulating film 140.Adopt fluid sealant sealed butt joint such as epoxy resin between PET film 150 and the anode conducting substrate 110.
Further, PET film 150 surfaces of this execution mode also are coated with the very capable metal A l film of one deck waterproof oxygen, and the Al film thickness is 60～110nm.
This organic electroluminescence device 100 makes full use of silicon oxide compound, nitrogen silicon compound, the high water resistant of simple substance film, oxygen resistance; Effectively reduce the erosion of external water, oxygen isoreactivity material to organic electroluminescence device 100; Thereby organic functional material and electrode to device 100 form effective protection, significantly improve the life-span of organic electroluminescence device 100.
Simultaneously, silicon oxide compound and nitrogen silicon compound composite bed can effectively reduce stress, strengthen the flexible characteristic of organic electroluminescence device 100.
A kind of manufacture method of above-mentioned organic electroluminescence device 100 comprises the steps:
Step 1: the anode pattern of preparation organic electroluminescence device on electrically-conductive backing plate forms anode conducting substrate 110.
Anode conducting substrate 110 has conducting glass substrate or organic PET (PETG) film substrate of anode pattern for surface etch.
Step 2: depositing light emitting layer 120 and negative electrode 130 successively on anode conducting substrate 110.
Method or the solution cladding process that preferably, can adopt vacuum evaporation depositing light emitting layer 120 and negative electrode 130 successively on anode conducting substrate 110.
Step 3: depositing silicon oxygen compound film 142 and nitrogen silicon compound film 144 successively on negative electrode 130.
Preferably, adopting vacuum evaporation, magnetron sputtering or PCVD (PECVD) on negative electrode 130, to prepare thickness is 100～150nm SiO or SiO
2Film.Adopt magnetron sputtering or PECVD on silicon oxide compound film 142, to prepare SiN or Si that a layer thickness is 100～150nm again
3N
4Film.
Step 4: the metal or the metalloid of deposition sulphur system or nitrogen system form simple substance film 146 on nitrogen silicon compound film 144.
The metal or the metalloid of sulphur system or nitrogen system can be metal or metalloids such as As, Se, Te, Sb or Po.Preferably, at least a on nitrogen silicon compound film 144 among vacuum evaporation Se, Te, the Sb, vacuum degree is 5 * 10
-5Pa～3 * 10
-5Pa, evaporation rate
Evaporation thickness 100～150nm.
In addition, after having deposited simple substance film 146, on simple substance film 146, apply the PET film 150 contain the Al film again, make the PET film cover luminescent layer 120, negative electrode 130 and encapsulating film 140 and with the step of anode conducting substrate 110 sealed engagement.Preferably, adopt ultraviolet curing epoxy encapsulation glue that PET film 150 and anode conducting substrate 110 joints are sealed, thereby organic electroluminescence device 100 is encapsulated in PET film 150 and the anode conducting substrate 110.
The manufacture method of above-mentioned organic electroluminescence device, the encapsulating material of employing is cheap, and preparation technology is simple, is prone to large-area preparation, and the organic electroluminescence device that makes significantly improves useful life.
As shown in Figure 2; Other preferred embodiment in; Organic electroluminescence device 200 adopts following structure, comprises anode conducting substrate 210, hole injection layer 220, hole transmission layer 230, luminescent layer 240, electron transfer layer 250, electron injecting layer 260, negative electrode 270, encapsulating film 280 that stacks gradually and the PET film 290 that contains the Al film.
Other preferred embodiment in, encapsulating film can also adopt the multilayer setting, strengthens waterproof, the oxygen-resistant ability of organic electroluminescence device, further strengthens its useful life.
Below be the specific embodiment part:
Embodiment 1:
A) transparent conducting glass substrate pre-treatment:
Use the ultrasonic cleaning machine to use liquid detergent cleaning, ethanol cleaning, acetone, pure water to clean successively to transparent conducting glass substrate, each washing time is 5 minutes, stops 5 minutes then, repeats respectively 3 times, and oven for drying is for use;
Transparent conducting glass substrate to after cleaning carries out surface activation process, to increase the oxygen content of conductive surface layer, improves the work function of conductive layer surface.
The conductive layer thickness of transparent conducting glass substrate is 100nm.
B) preparation of functional layer and luminescent layer: adopt the method for vacuum evaporation or the method for solution coating on substrate, to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer successively.Hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer constitute functional layer.
C) preparation of negative electrode: adopt vapor deposition to make the Al negative electrode.
D) making of SiO layer: adopt the mode of vacuum evaporation on the Al negative electrode, to prepare the SiO film that a layer thickness is 100nm, vacuum degree 5 * 10
-5Pa, evaporation rate
E) Si
3N
4The making of layer: adopt the magnetron sputtering mode on the SiO film, to prepare the Si of a layer thickness 100nm
3N
4Film, base vacuum degree 2 * 10
-3Pa.
F) making of Se layer: adopt vacuum deposition method at Si
3N
4Vapor deposition one layer thickness is the Se layer of 100nm on the film, vacuum degree 3 * 10
-5Pa, evaporation rate
G) e repetition d)) and f) form 6 layers of encapsulation function layer twice time.
H) use contains the above-mentioned organic electroluminescence device of covering of the PET film of Al film (thickness 110nm); And in PET film and the sealing of anode conducting substrates place employing epoxy encapsulation glue; Adopt the dry sclerosis of the mode packaging plastic of ultraviolet curing (UV-Curing), above-mentioned organic electroluminescence device is encapsulated in said PET film and the anode conducting substrate.
Embodiment 2: do not adopt the simple substance film in the encapsulating film, other is with embodiment 1;
Embodiment 3: do not adopt the simple substance film in the encapsulating film, and do not contain the Al film in the PET film, other is with embodiment 1.
The correlation curve figure in useful life of the organic electroluminescence device that Fig. 3 makes for above-mentioned three embodiment; Curve 1,2,3 is represented the luminous intensity and the time curve of the organic electroluminescence device among embodiment 1, embodiment 2 and the embodiment 3 respectively; As can be seen from the figure; Under the situation of identical luminous intensity, the useful life of the organic electroluminescence device that embodiment 1 obtains is than the phenomenal growth of embodiment 2 and embodiment 3.
Embodiment 4: embodiment 4 and embodiment 1 is identical substantially, and its difference is: among the embodiment 4 a) in conductive layer thickness be 150nm; D) adopt SiO
2, thickness 150nm; E) adopt SiN, thickness 150nm; F) adopt Te, thickness 150nm; H) thickness of Al is 60nm on the middle PET rete.
Embodiment 5: embodiment 5 and embodiment 1 is identical substantially, and its difference is: among the embodiment 5 a) in conductive layer thickness be 120nm; D) adopt SiO
2, thickness 120nm; E) adopt SiN, thickness 120nm; F) adopt Sb, thickness 120nm; H) thickness of Al is 90nm on the middle PET rete.
The above embodiment has only expressed several kinds of execution modes of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. organic electroluminescence device; Comprise the anode conducting substrate, luminescent layer and the negative electrode that stack gradually; It is characterized in that; Said organic electroluminescence device also comprises encapsulating film, said encapsulating film comprises the silicon oxide compound film that is formed on the said negative electrode, be formed on the nitrogen silicon compound film on the said silicon oxide compound film and be formed on the said nitrogen silicon compound film by the metal of sulphur system or nitrogen system or the simple substance film that metalloid forms.
2. organic electroluminescence device as claimed in claim 1 is characterized in that, said silicon oxide compound is SiO or SiO
2Said nitrogen silicon compound is SiN or Si
3N
4The metal or the metalloid of said sulphur system or nitrogen system are Se, Te or Sb.
3. according to claim 1 or claim 2 organic electroluminescence device is characterized in that said silicon oxide compound film thickness is 100～150nm; Said nitrogen silicon compound film thickness is 100～150nm; The thickness of said simple substance film is 100～150nm.
4. according to claim 1 or claim 2 organic electroluminescence device; It is characterized in that; Also comprise the PETG film that is formed on the said simple substance film and covers said luminescent layer, negative electrode and encapsulating film, said PETG film engages with said anode conducting base plate seals.
5. organic electroluminescence device as claimed in claim 4 is characterized in that, also comprises the Al film that covers on the said PETG film.
6. according to claim 1 or claim 2 organic electroluminescence device; It is characterized in that, also comprise hole injection layer and the hole transmission layer that is formed on successively between said anode conducting substrate and the said luminescent layer and be formed on electron transfer layer and the electron injecting layer between said luminescent layer and the negative electrode successively.
7. the manufacture method of an organic electroluminescence device is characterized in that, comprises the steps:
The anode pattern of preparation organic electroluminescence device forms the anode conducting substrate on electrically-conductive backing plate;
Depositing light emitting layer and negative electrode successively on said anode conducting substrate;
Depositing silicon oxygen compound film and nitrogen silicon compound film successively on said negative electrode;
The metal or the metalloid of deposition sulphur system or nitrogen system form the simple substance film on said nitrogen silicon compound film.
8. the manufacture method of organic electroluminescence device as claimed in claim 7 is characterized in that, SiO film or SiO that said silicon oxide compound film is thickness 100～150nm
2Film;
SiN film or Si that said nitrogen silicon compound film is thickness 100～150nm
3N
4Film;
The Se film that said simple substance film is thickness 100～150nm, Te film or Sb film.
9. like claim 7 or 8 described organic electroluminescence devices; It is characterized in that; Also be included in and apply the PETG film that contains the Al film, the step that makes said PETG film cover said luminescent layer, negative electrode and encapsulating film and dock on the said simple substance film with said anode conducting base plate seals.
10. like claim 7 or 8 described organic electroluminescence devices; It is characterized in that, also be included in the step that forms hole injection layer and hole transmission layer between said anode conducting substrate and the said luminescent layer successively and between said luminescent layer and negative electrode, form electron transfer layer and electron injecting layer successively.
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|---|---|---|---|
| CN2011101682216A CN102842683A (en) | 2011-06-21 | 2011-06-21 | Organic electroluminescence device and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124376A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124365A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104124360A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104183773A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device (OLED) and manufacturing method thereof |
| CN108368398A (en) * | 2015-12-04 | 2018-08-03 | 利诺士尖端材料有限公司 | Organic electronic device is with bonding film and including its organic electronic device encapsulating material |
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| CN104124376A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
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| CN108368398A (en) * | 2015-12-04 | 2018-08-03 | 利诺士尖端材料有限公司 | Organic electronic device is with bonding film and including its organic electronic device encapsulating material |
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Application publication date: 20121226 |