CN104882528A - Packaging structure and packaging method of optoelectronic device - Google Patents

Abstract

The invention discloses a packaging structure and a packaging method of an optoelectronic device. The packaging structure of the optoelectronic device includes a thin film packaging layer used for wrapping the optoelectronic device, and is characterized in that the thin film packaging layer is formed by alternately overlapping inorganic packaging material layers and ultraviolet curing resin layers with a period number n, wherein 1<=n<=20, ultraviolet curing resin comprises the following components by mass percent: lac, glycerol, lead oxide, toluene diisocynate, trimethylolpropane, hydroquinone, tetrahydrofuran, 2-hydroxyethyl methyl acrylate, dibutyltin dilaurate, 2,2-dimethoxy-phenyl ketone and trimethylolpropane triacrylate. The packaging structure can effectively block oxygen and water in ambient environment, thereby facilitating improvement of stability of the device and prolonging of the life of the device; and at the same time, the packaging method has the characteristics of simple preparation technology and low cost.

Description

A packaging structure and packaging method for an optoelectronic device

technical field

The invention relates to the field of optoelectronic technology, in particular to a packaging structure and a packaging method of an optoelectronic device.

Background technique

In the past 10 years, with the rapid development of optoelectronic technology, optoelectronic products such as light-emitting diodes, organic light-emitting diodes, solar cells, and thin-film transistors have gradually matured, greatly improving people's lives, and becoming the most promising high-tech industry. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market. The competition in the field of optoelectronic information is unfolding worldwide, and it will surely become the most active research direction in the field of electronic information in the future.

Optoelectronic devices mainly include organic electroluminescent devices, inorganic light-emitting diodes, organic solar cells, inorganic solar cells, organic thin film transistors, inorganic thin film transistors, ultraviolet light detectors, infrared light detectors, etc., because of their low-carbon and environmental protection characteristics in line with the current The theme of green life advocated has become the optoelectronic device with the most development potential and application market. Although organic optoelectronic devices have excellent performance, there are still some problems to be solved: since most of their components are made of organic materials on rigid (such as glass or silicon wafer) or flexible substrates, and the organic materials themselves are harmful to the external environment. Strong sensitivity, as time goes by, the components such as water and oxygen in the atmospheric environment will have a serious negative effect on the material, so that the performance of the unpackaged device will gradually decrease after being placed in the atmospheric environment, or even completely Lost performance. Specifically, oxygen oxidizes organic materials to generate carbonyl compounds, which are serious quenchers. In addition, black spots are formed when materials deteriorate, and device performance declines. The influence of water vapor is more obvious, and its main damage mode is the hydrolysis of the organic layer compound by the conductive electrode, which greatly reduces the stability. Therefore, it is very necessary to package organic optoelectronic devices, improve their service life, and suppress their performance degradation and failure. What kind of packaging materials and packaging methods are used for this has become another breakthrough point to solve the problem. .

Contents of the invention

The technical problem to be solved by the present invention is how to provide a packaging method for optoelectronic devices. This packaging method solves the problem of sensitivity of optoelectronic devices to water and oxygen, etc., can enhance the barrier ability of the device to water and oxygen, and improve the performance of the device. stability and longevity.

The technical problem proposed by the present invention is solved in this way: a packaging structure of an optoelectronic device includes a thin film encapsulation layer for coating an optoelectronic device, and the thin film encapsulation layer is composed of an inorganic encapsulation material layer and an ultraviolet light curing resin layer with a cycle number n Alternate overlapping composition, wherein, 1≤n≤20, the ultraviolet curable resin is composed of the following components in mass percentage:

In the packaging structure of the present invention, the inorganic packaging material is metal oxide or metal sulfide or metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, three One or more of aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide, iron sulfide, chromium trisulfide, copper sulfide, zinc sulfide, One or more of tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide, the metal nitride is silicon nitride or aluminum nitride one or both of them.

The invention also discloses a packaging method of an optoelectronic device, comprising the following steps:

① Preparation of optoelectronic devices;

②Preparing an inorganic packaging material layer on the prepared optoelectronic device;

③Preparing a UV curable resin layer on the inorganic packaging material layer;

④UV curing treatment for 30 seconds on the surface of the optoelectronic device treated in step ③;

⑤For the device after UV curing, continue to repeat steps ②, ③ and ④, and repeat n-1 times continuously, 1≤n≤20;

⑥ Test the life of the packaged device and other parameters.

In the packaging method of the present invention, the inorganic packaging material layer and the UV-curable resin layer are formed by vacuum evaporation, ion beam deposition, ion plating, direct current sputtering coating, RF sputtering coating, ion beam sputtering coating, ion beam sputtering coating, Beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, catalytic chemical vapor deposition, magnetron sputtering, inkjet printing, electroplating, spray coating, spin coating, dip coating, roll coating or One or several ways in the LB film are formed.

In the packaging method of the present invention, the optoelectronic device is a device that can perform signal and energy conversion between optoelectronics, electro-electrics or electro-optics.

In the packaging method of the present invention, the optoelectronic device is an organic electroluminescent diode, an inorganic light emitting diode, an organic solar cell, an inorganic solar cell, an organic thin film transistor, an inorganic thin film transistor or a photodetector.

In the packaging method of the present invention, the ultraviolet light curing resin is composed of the following components in mass percentage:

In the packaging method of the present invention, the inorganic packaging material is metal oxide or metal sulfide or metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, three One or more of aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide, iron sulfide, chromium trisulfide, copper sulfide, zinc sulfide, One or more of tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide, the metal nitride is silicon nitride or aluminum nitride one or both of them.

Beneficial effects of the present invention: Among the packaging materials of optoelectronic devices of the present invention, organic packaging materials are relatively scarce. The present invention provides a conventional and effective organic packaging material. Because the organic packaging material has good ultraviolet sensitivity characteristics, it is suitable for preparing optoelectronic devices. Appropriate UV treatment of the substrate after the device. The organic UV-curable resin has good curing agent properties, stability, bonding strength, light transmittance and high purity. Using various preferred ratios and process parameters provided in the present invention, better device performance can be obtained. The encapsulation layer of the present invention is composed of thin layers of inorganic encapsulation material and thin layers of organic ultraviolet curable resin alternately overlapped, which can not only reduce the cost and simplify the process, but also can improve the stability of the device and prolong the service life of the device.

The invention adopts thin-film packaging technology and proposes a packaging method with low cost and simple process, which can greatly improve the barrier effect of devices on oxygen and water vapor, reduce process difficulty and improve device stability. By solving the above-mentioned problems, optoelectronic devices will be more widely used and developed more rapidly.

Description of drawings

Fig. 1 is a schematic diagram of the optoelectronic device packaging structure of the embodiments 1, 2, 3, 4, 5, and 6 provided by the present invention;

Fig. 2 is a schematic diagram of the packaging structure of the optoelectronic device of the embodiments 7, 8, 9, 10, 11 and 12 provided by the present invention;

Fig. 3 is a schematic diagram of the optoelectronic device packaging structure of the embodiments 13, 14, 15, 16, 17, 18 provided by the present invention;

Fig. 4 is a schematic structural view of the optoelectronic device of Comparative Example 1 provided by the present invention;

Among them, 1 is an optoelectronic device, 11, substrate, 12, anode layer, 13, hole transport layer, 14, electron transport layer, 15, cathode layer, 16, electron donor layer, 17, electron acceptor layer, 18 , bottom electrode, 19, insulating layer, 20, carrier transport layer, 23, top electrode, 2 is the thin film encapsulation layer of the present invention, by inorganic encapsulation material layer 21 and ultraviolet light curable resin layer 22 with certain cycle number n Alternate overlapping composition.

Detailed ways

Shellac is a kind of purple-red natural resin secreted by a kind of lac insect that parasitizes on the branches of some leguminous plants and sucks the sap. It is also called lac. It has unique and excellent properties and is widely used in food and medicine. , plastics, military, electrical, rubber, ink, leather, paint, dye and adhesive industries. Shellac is non-toxic, and is mainly used in the pharmaceutical industry for moisture-proof sugar coating of pills and tablets, drug sealing, glazing, enteric drug coating, and capsules of nutrients and cosmetics developed in recent years. Shellac coatings can also be used in many aspects of the food industry. They can be absorbed by the human body and can be naturally degraded. For example, after coating shellac coatings on candies and cakes, they can become very beautiful and bright, and can prevent moisture, caking and deterioration. and prolong storage time. After fruit is coated with shellac paint, it can suppress water evaporation in a certain period of time, keep fresh, reduce rot, improve appearance, and produce the effect of improving economic benefits. Shellac products have good tensile strength, abrasion resistance, resilience and hardness, and have ideal mechanical properties. In terms of electrical properties, shellac has high dielectric strength, low dielectric constant, and is non-conductive after being dominated by an arc. In addition, it has good adhesion and thermoplasticity, and has special uses in electrical insulation.

Example 1

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 58% shellac, 3% glycerol, 0.97% lead oxide, 4% toluene diisocyanate, 9% trimethanol propane, 0.01% hydroquinone, 11% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.02% dibutyltin dilaurate, 2% 2,2-dimethoxy- Phenyl ketone and 5% trimethylol propane triacrylate, the number of cycles n is 20, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al ₂ O ₃ (200nm)/UV curable resin (100nm)] ₂₀

The preparation method is as follows:

①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 ^-4 Pa and 3.0×10 ^-3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③ For the organic electroluminescent device prepared above, the inorganic packaging material Al ₂ O ₃ was prepared by plasma-enhanced chemical vapor deposition (hereinafter referred to as PECVD), and the thickness of the deposition was 200nm;

④Pass the device into the cavity with UV curable resin, and spray UV curable resin, spray

The coating thickness is 100nm;

⑤UV curing the device for 30 seconds;

⑥Repeat the above steps ③～⑤, and then prepare a thin film layer composed of inorganic packaging materials and ultraviolet curing resins with a cycle number of (n-1) alternately;

⑦ Test the life of the device and its various parameters.

Example 2

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 53% shellac, 5% glycerol, 0.005% lead oxide, 4% toluene diisocyanate, 9% trimethanol propane, 0.005% hydroquinone, 12% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.99% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 6% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al ₂ O ₃ (200nm)/UV curable resin (100nm)] ₁₆

The preparation method is similar to Example 1.

Example 3

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 39% shellac, 5% glycerol, 0.003% lead oxide, 7% toluene diisocyanate, 10% trimethanol propane, 0.097% hydroquinone, 10% tetrahydrofuran, 7.9% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 9% 2,2-dimethoxy- Phenyl ketone and 11% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al ₂ O ₃ (200nm)/UV curable resin (100nm)] ₁₂

The preparation method is similar to Example 1.

Example 4

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si ₃ N ₄ , the UV curable resin layer 22 includes 10% shellac, 30% glycerol, 1% lead oxide, 10% toluene diisocyanate, 9% trimethanol propane, 0.5% hydroquinone, 15% tetrahydrofuran, 10% 2-hydroxyethyl methacrylate, 2% dibutyltin dilaurate, 5% 2,2-dimethoxy- Phenyl ketone and 7.5% trimethylol propane triacrylate, the number of cycles n is 8, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si ₃ N ₄ (500nm)/UV curable resin (500nm)] ₈

The preparation method is similar to Example 1.

Example 5

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si ₃ N ₄ , the UV curable resin layer 22 includes 8% shellac, 5% glycerin, 0.8% lead oxide, 32% toluene diisocyanate, 13% trimethanol propane, 0.8% hydroquinone, 13% tetrahydrofuran, 13% 2-hydroxyethyl methacrylate, 0.4% dibutyltin dilaurate, 4% 2,2-dimethoxy- Phenyl ketone and 10% trimethylol propane triacrylate, the number of cycles n is 4, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al ₂ O ₃ (500nm)/UV curable resin (500nm)] ₄

The preparation method is similar to Example 1.

Example 6

As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si ₃ N ₄ , the UV curable resin layer 22 includes 10% shellac, 9% glycerol, 1% lead oxide, 6% toluene diisocyanate, 41% trimethanol propane, 0.8% hydroquinone, 10% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1.2% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 10% trimethylol propane triacrylate, the number of cycles n is 1, and the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si ₃ N ₄ (500nm)/UV curable resin (500nm)] ₁

The preparation method is similar to Example 1.

Example 7

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 13% shellac, 4% glycerol, 1.5% lead oxide, 5% toluene diisocyanate, 10% tris Methyl propane, 0.5% hydroquinone, 42% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 3% 2,2-dimethoxy -Phenyl ketone and 12% trimethylol propane triacrylate, the number of cycles n is 20, the device structure is:

Glass substrate/ITO/CuPc(20nm)/C ₆₀ (40nm)/Ag(150nm)/[Al ₂ O ₃ (100nm)/UV curable resin (80nm)] ₂₀

The preparation method is similar to Example 1.

Example 8

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 9% shellac, 14% glycerol, 1% lead oxide, 6% toluene diisocyanate, 10% tris Methyl propane, 0.6% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1.4% dibutyltin dilaurate, 3% 2,2-dimethoxy -Phenyl ketone and 35% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

Glass substrate/ITO/CuPc(20nm)/C ₆₀ (40nm)/Ag(150nm)/[Al ₂ O ₃ (100nm)/UV curable resin (80nm)] ₁₆

The preparation method is similar to Example 1.

Example 9

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al ₂ O ₃ , the UV curable resin layer 22 includes 40% shellac, 6% glycerol, 0.97% lead oxide, 5% toluene diisocyanate, 10% tris Methyl propane, 0.01% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 0.02% dibutyltin dilaurate, 9% 2,2-dimethoxy -Phenyl ketone and 9% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Glass substrate/ITO/CuPc(20nm)/C ₆₀ (40nm)/Ag(150nm)/[Al ₂ O ₃ (100nm)/UV curable resin (80nm)] ₁₂

The preparation method is similar to Example 1.

Example 10

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO ₂ , the UV curable resin layer 22 includes 28% shellac, 12% glycerol, 1% lead oxide, 5% toluene diisocyanate, 10% trimethylol Propane, 0.5% hydroquinone, 15% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.5% dibutyltin dilaurate, 3% 2,2-dimethoxy-benzene Methyl ketone and 18% trimethylol propane triacrylate, the number of cycles n is 20, and the device structure is:

Glass substrate/ITO/CuPc(20nm)/C ₆₀ (40nm)/Ag(150nm)/[SiO ₂ (300nm)/UV curable resin (500nm)] ₈

The preparation method is similar to Example 1.

Example 11

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO ₂ , the UV curable resin layer 22 includes 30% shellac, 5% glycerol, 1% lead oxide, 7% toluene diisocyanate, 10% trimethylol Propane, 0.8% hydroquinone, 15% tetrahydrofuran, 10.2% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 8% 2,2-dimethoxy-benzene Methyl ketone and 12% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

Glass substrate/ITO/CuPc(20nm)/C ₆₀ (40nm)/Ag(150nm)/[SiO ₂ (300nm)/UV curable resin (500nm)] ₄

The preparation method is similar to Example 1.

Example 12

As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C ₆₀ ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO ₂ , the UV curable resin layer 22 includes 11% shellac, 30% glycerin, 0.85% lead oxide, 13% toluene diisocyanate, 10% trimethylol Propane, 0.08% hydroquinone, 12% tetrahydrofuran, 10% 2-hydroxyethyl methacrylate, 0.07% dibutyltin dilaurate, 6% 2,2-dimethoxy-benzene Methyl ketone and 7% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Glass substrate/ITO/CuPc (20nm)/C ₆₀ (40nm)/Ag (150nm)/[SiO ₂ (300nm)/UV curable resin (500nm)] ₁ The preparation method is similar to that of Example 1.

Example 13

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si ₃ N ₄ , and the UV curable resin layer 22 includes 10% shellac, 20% glycerol, 0.5% lead oxide, 32% toluene diisocyanate, 9% Trimethylol propane, 0.5% hydroquinone, 10% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 3% 2,2-dimethoxy Base-phenyl ketone and 7% trimethylol propane triacrylate, the number of cycles n is 20, the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si ₃ N ₄ (200nm)/UV curable resin (100nm)] ₂₀

The preparation method is as follows:

①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 ^-4 Pa and 3.0×10 ^-3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③ For the organic thin film transistor device prepared above, the inorganic packaging material Si ₃ N ₄ was prepared by plasma-enhanced chemical vapor deposition (hereinafter referred to as PECVD), and the deposited thickness was 200nm;

④Pass the device into the cavity with UV-curable resin, and spray UV-curable resin with a thickness of 100nm;

⑤UV curing the device for 30 seconds;

⑥Repeat the above steps ③～⑤, and then prepare a thin film layer composed of inorganic packaging materials and ultraviolet curing resins with a cycle number of (n-1) alternately;

⑦ Test the life of the device and its various parameters.

Example 14

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si ₃ N ₄ , and the UV curable resin layer 22 includes 10% shellac, 42% glycerol, 0.3% lead oxide, 5% toluene diisocyanate, 10% Trimethylol propane, 0.7% hydroquinone, 12% tetrahydrofuran, 9% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 2% 2,2-dimethoxy Base-phenyl ketone and 8% trimethylol propane triacrylate, the number of cycles n is 16, the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si ₃ N ₄ (200nm)/UV curable resin (100nm)] ₁₆

The preparation method is similar to Example 13.

Example 15

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si ₃ N ₄ , and the UV curable resin layer 22 includes 15% shellac, 13% glycerin, 0.1% lead oxide, 5% toluene diisocyanate, 12% Trimethylol propane, 0.8% hydroquinone, 20% tetrahydrofuran, 11% 2-hydroxyethyl methacrylate, 0.1% dibutyltin dilaurate, 3% 2,2-dimethoxy Base-phenyl ketone and 20% trimethylol propane triacrylate, the number of cycles n is 12, the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si ₃ N ₄ (200nm)/UV curable resin (100nm)] ₁₂

The preparation method is similar to Example 13.

Example 16

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO ₂ , and the UV curable resin layer 22 includes 15% shellac, 15% glycerol, 0.2% lead oxide, 7% toluene diisocyanate, and 11% trimethanol propane, 0.8% hydroquinone, 12% tetrahydrofuran, 11% 2-hydroxyethyl methacrylate, 2% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 23% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO ₂ (200nm)/UV curable resin (500nm)] ₈

The preparation method is similar to Example 13.

Example 17

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO ₂ , and the UV curable resin layer 22 includes 11% shellac, 11% glycerin, 0.4% lead oxide, 6% toluene diisocyanate, and 10% trimethanol propane, 0.6% hydroquinone, 11% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 7% 2,2-dimethoxy- Phenyl ketone and 35% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO ₂ (200nm)/UV curable resin (500nm)] ₄

The preparation method is similar to Example 13.

Example 18

As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO ₂ , and the UV curable resin layer 22 includes 19% shellac, 11% glycerol, 0.095% lead oxide, 6% toluene diisocyanate, and 10% trimethanol propane, 0.005% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 3% dibutyltin dilaurate, 3.9% 2,2-dimethoxy- Phenyl ketone and 27% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO ₂ (200nm)/UV curable resin (500nm)] ₁

The preparation method is similar to Example 13.

Comparative Example 1

As shown in Figure 4, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the device structure is:

Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)

The preparation method is as follows:

①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 ^-4 Pa and 3.0×10 ^-3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③ Test the life of the device and its various parameters.

Table 1: Performance comparison of optoelectronic device lifetimes of Comparative Example 1 and Examples 1, 2, 3, 4, 5, and 6.

Claims (8)

1. A packaging structure for an optoelectronic device, comprising a thin film encapsulation layer for covering an optoelectronic device, characterized in that the thin film encapsulation layer is composed of an inorganic encapsulation material layer and an ultraviolet light curable resin layer alternately overlapping with a cycle number n, wherein, 1≤n≤20, the UV curable resin is composed of the following components in mass percentage: 2. The packaging structure of an optoelectronic device according to claim 1, wherein the inorganic packaging material is a metal oxide or a metal sulfide or a metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide , zirconium dioxide, copper oxide, zinc oxide, aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide and iron sulfide One or more of chromium trisulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide , the metal nitride is one or both of silicon nitride or aluminum nitride. 3. A packaging method for an optoelectronic device, comprising the following steps: ① Preparation of optoelectronic devices; ②Preparing an inorganic packaging material layer on the prepared optoelectronic device; ③Preparing a UV curable resin layer on the inorganic packaging material layer; ④UV curing treatment for 30 seconds on the surface of the optoelectronic device treated in step ③; ⑤For the device after UV curing, continue to repeat steps ②, ③ and ④, and repeat n-1 times continuously, 1≤n≤20; ⑥ Test the life of the packaged device and other parameters. 4. The encapsulation method of optoelectronic device according to claim 3, is characterized in that, described inorganic encapsulation material layer and ultraviolet curable resin layer are by vacuum evaporation, ion group beam deposition, ion plating, DC sputter coating, RF sputtering coating, ion beam sputtering coating, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, catalytic chemical vapor deposition, magnetron sputtering, inkjet printing, electroplating , spray coating, spin coating, dip coating, roll coating or LB film in one or more ways. 5 . The packaging method of an optoelectronic device according to claim 3 , wherein the optoelectronic device is a device capable of converting signals and energy between optoelectronics, electro-electrics or electro-optics. 6 . 6. The encapsulation method of an optoelectronic device according to claim 5, wherein the optoelectronic device is an organic electroluminescent diode, an inorganic light emitting diode, an organic solar cell, an inorganic solar cell, an organic thin film transistor, an inorganic thin film transistor or a photodetector device. 7. The encapsulation method of an optoelectronic device according to claim 3, wherein the ultraviolet curable resin is composed of the following components in mass percent: 8. The packaging method of an optoelectronic device according to claim 3, wherein the inorganic packaging material is a metal oxide or a metal sulfide or a metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide , zirconium dioxide, copper oxide, zinc oxide, aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide and iron sulfide One or more of chromium trisulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide , the metal nitride is one or both of silicon nitride or aluminum nitride.