CN104882528A - Packaging structure and packaging method of optoelectronic device - Google Patents
Packaging structure and packaging method of optoelectronic device Download PDFInfo
- Publication number
- CN104882528A CN104882528A CN201510211639.9A CN201510211639A CN104882528A CN 104882528 A CN104882528 A CN 104882528A CN 201510211639 A CN201510211639 A CN 201510211639A CN 104882528 A CN104882528 A CN 104882528A
- Authority
- CN
- China
- Prior art keywords
- opto
- electronic device
- layer
- sulfide
- cured resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 title abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 57
- 229920005989 resin Polymers 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 40
- 238000012856 packing Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 4
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical group [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 239000000292 calcium oxide Substances 0.000 claims description 4
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229960004643 cupric oxide Drugs 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 claims description 4
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical group S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract description 57
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 57
- 238000002360 preparation method Methods 0.000 abstract description 22
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 abstract description 20
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 abstract description 19
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 abstract description 19
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 abstract description 19
- 229910000464 lead oxide Inorganic materials 0.000 abstract description 19
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000005022 packaging material Substances 0.000 abstract description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 abstract 2
- ZTQIQRKFHJRLAX-UHFFFAOYSA-N COC1(C(C=CC=C1)C(=O)C1C(C=CC=C1)(OC)OC)OC Chemical compound COC1(C(C=CC=C1)C(=O)C1C(C=CC=C1)(OC)OC)OC ZTQIQRKFHJRLAX-UHFFFAOYSA-N 0.000 abstract 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012975 dibutyltin dilaurate Substances 0.000 abstract 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 123
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 229910052757 nitrogen Inorganic materials 0.000 description 31
- 239000000758 substrate Substances 0.000 description 27
- 229920001800 Shellac Polymers 0.000 description 25
- 239000004208 shellac Substances 0.000 description 25
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 25
- 229940113147 shellac Drugs 0.000 description 25
- 235000013874 shellac Nutrition 0.000 description 25
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
- NNNLYDWXTKOQQX-UHFFFAOYSA-N 1,1-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OC(CC)(OC(=O)C=C)OC(=O)C=C NNNLYDWXTKOQQX-UHFFFAOYSA-N 0.000 description 18
- 150000005208 1,4-dihydroxybenzenes Chemical class 0.000 description 18
- 102100026735 Coagulation factor VIII Human genes 0.000 description 18
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 18
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 18
- -1 hydroxyl methyl Chemical group 0.000 description 18
- 239000012948 isocyanate Substances 0.000 description 18
- 150000002576 ketones Chemical class 0.000 description 18
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 18
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 18
- 239000004926 polymethyl methacrylate Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005401 electroluminescence Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000027756 respiratory electron transport chain Effects 0.000 description 8
- LOIBXBUXWRVJCF-UHFFFAOYSA-N 4-(4-aminophenyl)-3-phenylaniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1C1=CC=CC=C1 LOIBXBUXWRVJCF-UHFFFAOYSA-N 0.000 description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 6
- 229910003472 fullerene Inorganic materials 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 241001516928 Kerria lacca Species 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 239000010022 Myron Substances 0.000 description 1
- 241001439614 Myron Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 235000021374 legumes Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 230000003248 secreting effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a packaging structure and a packaging method of an optoelectronic device. The packaging structure of the optoelectronic device includes a thin film packaging layer used for wrapping the optoelectronic device, and is characterized in that the thin film packaging layer is formed by alternately overlapping inorganic packaging material layers and ultraviolet curing resin layers with a period number n, wherein 1<=n<=20, ultraviolet curing resin comprises the following components by mass percent: lac, glycerol, lead oxide, toluene diisocynate, trimethylolpropane, hydroquinone, tetrahydrofuran, 2-hydroxyethyl methyl acrylate, dibutyltin dilaurate, 2,2-dimethoxy-phenyl ketone and trimethylolpropane triacrylate. The packaging structure can effectively block oxygen and water in ambient environment, thereby facilitating improvement of stability of the device and prolonging of the life of the device; and at the same time, the packaging method has the characteristics of simple preparation technology and low cost.
Description
Technical field
The present invention relates to photoelectron technical field, be specifically related to a kind of encapsulating structure and method for packing of opto-electronic device.
Background technology
Over nearly 10 years, along with developing rapidly of photoelectron technology, the O-E Products such as light-emitting diode, Organic Light Emitting Diode, solar cell, thin-film transistor are progressively full-fledged, improve the life of people greatly, become the high-tech industry of most prospect.Meanwhile, opto-electronic information technology, in the extensive use of social life every field, also creates growing great market, and the competition of the field of opto-electronic information just launches at world wide, will become the research direction that future electronic message area enlivens the most.
Opto-electronic device mainly includes organic electroluminescence devices, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors, ultraviolet light detector, infrared detector etc., the green living theme that the characteristic conforms because of its low-carbon environment-friendly is advocated instantly and become the opto-electronic device of most development potentiality and application market.Although organic optoelectronic device has excellent performance, but still there are some problem demanding prompt solutions: because its part is mostly adopt organic material to be prepared on rigidity (as glass or silicon chip) or flexible base, board, and organic material itself to external world environment there is very strong sensitiveness, As time goes on, water in atmospheric environment and Yang Dengcheng branch produce serious negative effect to material, thus the device do not encapsulated can make device performance reduce gradually after placing in atmospheric environment, loses performance even completely.Specifically, oxygen makes organic material produce oxidation and can generate carbonyls, and this compound is serious quencher, and in addition, material is rotten will form blackspot, and declines with device performance.The impact of steam is more apparent, and its main failure mode is the hydrolysis of conductive electrode to organic layer compound, and stability is declined greatly.Therefore, organic optoelectronic device is encapsulated, improves its useful life, suppress degeneration and the inefficacy of its performance, just seem very necessary, for and adopt which kind of encapsulating material and which kind of method for packing also just to become another break-through point of dealing with problems.
Summary of the invention
Technical problem to be solved by this invention is the method for packing how providing a kind of opto-electronic device, this method for packing solves the sensitive question of opto-electronic device to water and oxygen etc., can enhance device to the obstructing capacity of water and oxygen, improve stability and the life-span of device.
Technical problem proposed by the invention solves like this: a kind of encapsulating structure of opto-electronic device, comprise the thin-film encapsulation layer for coated opto-electronic device, thin-film encapsulation layer is made up of so that periodicity n is alternately stacked inorganic encapsulated material layer and UV-cured resin layer, wherein, 1≤n≤20, described UV-cured resin is made up of the component of following mass percent:
In encapsulating structure of the present invention, described inorganic encapsulated material is metal oxide or metal sulfide or metal nitride, metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al2O3), chrome green, tin ash, one or more in nickel oxide or antimony pentoxide, metal sulfide is titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, trisulfides two lanthanums, one or more in cerium sulphide or curing zirconium, metal nitride is one or both in silicon nitride or aluminium nitride.
The invention also discloses a kind of method for packing of opto-electronic device, comprise the following steps:
1. opto-electronic device is prepared;
2. on prepared opto-electronic device, inorganic encapsulated material layer is prepared;
3. on inorganic encapsulated material layer, UV-cured resin layer is prepared;
4. ultraviolet light polymerization process is carried out 30 seconds in the opto-electronic device surface after 3. processing step;
5. to the device after ultraviolet light polymerization, continue to repeat step operation 2., 3. and 4., repeat n-1 time continuously, 1≤n≤20;
6. life-span of device and other parameters after test package.
In method for packing of the present invention, described inorganic encapsulated material layer and UV-cured resin layer are formed by one or several modes in vacuum evaporation, ionized cluster beam deposition, ion plating, DC sputtering deposition, RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, catalyst chemical vapour deposition (CVD), magnetron sputtering, inkjet printing, plating, spraying, spin coating, dip-coating, roller coat or LB film.
In method for packing of the present invention, described opto-electronic device is between a kind of photoelectricity, electric between or the device of signal and power conversion can be carried out between electric light.
In method for packing of the present invention, opto-electronic device is organic electroluminescent LED, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors or photo-detector.
In method for packing of the present invention, UV-cured resin is made up of the component of following mass percent:
In method for packing of the present invention, described inorganic encapsulated material is metal oxide or metal sulfide or metal nitride, metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al2O3), chrome green, tin ash, one or more in nickel oxide or antimony pentoxide, metal sulfide is titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, trisulfides two lanthanums, one or more in cerium sulphide or curing zirconium, metal nitride is one or both in silicon nitride or aluminium nitride.
Beneficial effect of the present invention: in the encapsulating material of opto-electronic device of the present invention, organic packaging materials is comparatively rare, the invention provides a kind of routine, effective organic packaging materials, because organic packaging materials possesses good ultraviolet sensitivity characteristic, after preparing opto-electronic device, suitable ultraviolet process is carried out to substrate.Organic ultraviolet light-cured resin has good curing agent, stability, adhesion strength, light transmittance and high-purity, adopts the various preferred proportion and technological parameter that provide in the present invention, can obtain more excellent device performance.Encapsulated layer of the present invention adopts inorganic encapsulated material thin-layer and described organic ultraviolet light-cured resin interlaminate overlap composition, can not only reduce costs, Simplified flowsheet, importantly can improve device stability well, extend device lifetime.
The present invention adopts thin film encapsulation technology, proposes a kind of low cost and the simple method for packing of technique, greatly can improve the iris action of device to oxygen and steam etc., reduces technology difficulty and improves device stability.By solving these problems above-mentioned, opto-electronic device will be made to obtain applying more widely and develop more fast.
Accompanying drawing explanation
Fig. 1 is the optoelectronic device packaging structural representation of embodiment 1,2,3,4,5,6 provided by the present invention;
Fig. 2 is the optoelectronic device packaging structural representation of embodiment 7,8,9,10,11,12 provided by the present invention;
Fig. 3 is the optoelectronic device packaging structural representation of embodiment 13,14,15,16,17,18 provided by the present invention;
Fig. 4 is the optoelectronic device structure schematic diagram of comparative example 1 provided by the present invention;
Wherein, 1 is opto-electronic device, 11, substrate, 12, anode layer, 13, hole transmission layer, 14, electron transfer layer, 15, cathode layer, 16, electron donor layer, 17, electron acceptor layer, 18, hearth electrode, 19, insulating barrier, 20, carrier blocking layers, 23, top electrode, 2 is thin-film encapsulation layer of the present invention, is made up of so that certain periodicity n is alternately stacked inorganic encapsulated material layer 21 and UV-cured resin layer 22.
Embodiment
Shellac be by a kind of lac insect parasitize some legume branches suck myron after a kind of aubergine natural resin of secreting, be also referred to as lac, there is unique good characteristic, be widely used in food, medicine, plastics, military affairs, electrically, the industry such as rubber, ink, leather, coating, dyestuff and adhesive.Shellac is nontoxic, is mainly used in the capsule etc. of nutrients that the moistureproof sugar-coat of pill tablet, medication containment, glazing, enteric cartridge bag clothing and developed recently get up and cosmetics at present in medical industry.Shellac waring can be used for a lot of aspects of food industry equally, can be absorbed by the body, can natural degradation, such as, after candy and cake have been coated with shellac waring, can become very attractive in appearance, bright, can protection against the tide, anti-caking, anti-metamorphic and prolongation period of storage etc.Fruit, with after shellac waring film, can suppress moisture to evaporate over a period to come, keep fresh, reduces and rots, improve outward appearance, produces the effect of increasing economic efficiency.Shellac product has good tensile strength, resistance to wear, resilience and hardness, has desirable mechanical performance.Electric property aspect, the dielectric strength of shellac is high, and dielectric constant is low, and after arranging by electric arc, without conductivity, adds that it has good adherence and thermoplasticity, electrical apparatus insulation has special purposes.
Embodiment 1
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprise 58% shellac, 3% glycerol, 0.97% lead oxide, 4% toluene di-isocyanate(TDI), 9% trimethylolpropane, 0.01% hydroquinones, 11% oxolane, 7% HEMA, the dibutyl tin laurate of 0.02%, 2% 2,2-dimethoxy-phenylf ketone and 5% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 20, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2o
3(200nm)/UV-cured resin (100nm)]
20
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached high vacuum evaporation room, keep the pressure of organic chamber and wire chamber to be 3.0 × 10 respectively
-4pa and 3.0 × 10
-3below Pa, utilizes high vacuum vapor deposition method to prepare each organic function layer and cathode metal layer;
3. to the organic electroluminescence device of above-mentioned preparation, plasma enhanced chemical vapor phase deposition (hereinafter referred to as PECVD) method is utilized to prepare inorganic encapsulated materials A l
2o
3, the thickness of deposition is 200nm;
4. device is reached and have in the cavity of UV-cured resin, and spray UV-cured resin, spray
The thickness be coated with is 100nm;
5. ultraviolet light polymerization process is carried out 30 seconds to device;
6. repeat above-mentioned steps 3. ~ 5., then manufacturing cycle number be the thin layer that the inorganic encapsulated material of (n-1) and UV-cured resin alternately form;
7. life-span of test component and parameters thereof.
Embodiment 2
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprises the shellac of 53%, glycerol, the lead oxide of 0.005%, toluene di-isocyanate(TDI), the trimethylolpropane of 9%, hydroquinones, the oxolane of 12%, the HEMA of 7% of 0.005% of 4% of 5%, the dibutyl tin laurate of 0.99%, 3% 2,2-dimethoxy-phenylf ketone and 6% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 16, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2o
3(200nm)/UV-cured resin (100nm)]
16
Preparation method is similar to embodiment 1.
Embodiment 3
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprise 39% shellac, 5% glycerol, 0.003% lead oxide, 7% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.097% hydroquinones, 10% oxolane, 7.9% HEMA, the dibutyl tin laurate of 1%, 9% 2,2-dimethoxy-phenylf ketone and 11% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2o
3(200nm)/UV-cured resin (100nm)]
12
Preparation method is similar to embodiment 1.
Embodiment 4
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 10% shellac, 30% glycerol, 1% lead oxide, 10% toluene di-isocyanate(TDI), 9% trimethylolpropane, 0.5% hydroquinones, 15% oxolane, 10% HEMA, the dibutyl tin laurate of 2%, 5% 2,2-dimethoxy-phenylf ketone and 7.5% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 8, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Si
3n
4(500nm)/UV-cured resin (500nm)]
8
Preparation method is similar to embodiment 1.
Embodiment 5
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 8% shellac, 5% glycerol, 0.8% lead oxide, 32% toluene di-isocyanate(TDI), 13% trimethylolpropane, 0.8% hydroquinones, 13% oxolane, 13% HEMA, the dibutyl tin laurate of 0.4%, 4% 2,2-dimethoxy-phenylf ketone and 10% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 4, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Al
2o
3(500nm)/UV-cured resin (500nm)]
4
Preparation method is similar to embodiment 1.
Embodiment 6
As shown in Figure 1,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 10% shellac, 9% glycerol, 1% lead oxide, 6% toluene di-isocyanate(TDI), 41% trimethylolpropane, 0.8% hydroquinones, 10% oxolane, 8% HEMA, the dibutyl tin laurate of 1.2%, 3% 2,2-dimethoxy-phenylf ketone and 10% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 1, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)/[Si
3n
4(500nm)/UV-cured resin (500nm)]
1
Preparation method is similar to embodiment 1.
Embodiment 7
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprise 13% shellac, 4% glycerol, 1.5% lead oxide, 5% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.5% hydroquinones, 42% oxolane, 8% HEMA, the dibutyl tin laurate of 1%, 3% 2,2-dimethoxy-phenylf ketone and 12% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 20, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2o
3(100nm)/UV-cured resin (80nm)]
20
Preparation method is similar to embodiment 1.
Embodiment 8
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprise 9% shellac, 14% glycerol, 1% lead oxide, 6% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.6% hydroquinones, 12% oxolane, 8% HEMA, the dibutyl tin laurate of 1.4%, 3% 2,2-dimethoxy-phenylf ketone and 35% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 16, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2o
3(100nm)/UV-cured resin (80nm)]
16
Preparation method is similar to embodiment 1.
Embodiment 9
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is Al
2o
3uV-cured resin layer 22 comprise 40% shellac, 6% glycerol, 0.97% lead oxide, 5% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.01% hydroquinones, 12% oxolane, 8% HEMA, the dibutyl tin laurate of 0.02%, 9% 2,2-dimethoxy-phenylf ketone and 9% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[Al
2o
3(100nm)/UV-cured resin (80nm)]
12
Preparation method is similar to embodiment 1.
Embodiment 10
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 28% shellac, 12% glycerol, 1% lead oxide, 5% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.5% hydroquinones, 15% oxolane, 7% HEMA, the dibutyl tin laurate of 0.5%, 3% 2,2-dimethoxy-phenylf ketone and 18% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 20, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
8
Preparation method is similar to embodiment 1.
Embodiment 11
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 30% shellac, 5% glycerol, 1% lead oxide, 7% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.8% hydroquinones, 15% oxolane, 10.2% HEMA, the dibutyl tin laurate of 1%, 8% 2,2-dimethoxy-phenylf ketone and 12% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 16, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
4
Preparation method is similar to embodiment 1.
Embodiment 12
As shown in Figure 2,1 is organic solar batteries device, and anode layer 12 is ITO, and electron donor layer 16 is CuPc (CuPc), and electron acceptor layer 17 is fullerene (C
60), cathode layer 15 is Ag, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 11% shellac, 30% glycerol, 0.85% lead oxide, 13% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.08% hydroquinones, 12% oxolane, 10% HEMA, the dibutyl tin laurate of 0.07%, 6% 2,2-dimethoxy-phenylf ketone and 7% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Glass substrate/ITO/CuPc (20nm)/C
60(40nm)/Ag (150nm)/[SiO
2(300nm)/UV-cured resin (500nm)]
1preparation method is similar to embodiment 1.
Embodiment 13
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 10% shellac, 20% glycerol, 0.5% lead oxide, 32% toluene di-isocyanate(TDI), 9% trimethylolpropane, 0.5% hydroquinones, 10% oxolane, 7% HEMA, the dibutyl tin laurate of 1%, 3% 2,2-dimethoxy-phenylf ketone and 7% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 20, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3n
4(200nm)/UV-cured resin (100nm)]
20
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached high vacuum evaporation room, keep the pressure of organic chamber and wire chamber to be 3.0 × 10 respectively
-4pa and 3.0 × 10
-3below Pa, utilizes high vacuum vapor deposition method to prepare each organic function layer and cathode metal layer;
3. to the organic thin film transistor device of above-mentioned preparation, plasma enhanced chemical vapor phase deposition (hereinafter referred to as PECVD) method is utilized to prepare inorganic encapsulated material Si
3n
4, the thickness of deposition is 200nm;
4. reached by device and have in the cavity of UV-cured resin, and spray UV-cured resin, the thickness of spraying is 100nm;
5. ultraviolet light polymerization process is carried out 30 seconds to device;
6. repeat above-mentioned steps 3. ~ 5., then manufacturing cycle number be the thin layer that the inorganic encapsulated material of (n-1) and UV-cured resin alternately form;
7. life-span of test component and parameters thereof.
Embodiment 14
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 10% shellac, 42% glycerol, 0.3% lead oxide, 5% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.7% hydroquinones, 12% oxolane, 9% HEMA, the dibutyl tin laurate of 1%, 2% 2,2-dimethoxy-phenylf ketone and 8% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 16, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3n
4(200nm)/UV-cured resin (100nm)]
16
Preparation method is similar to embodiment 13.
Embodiment 15
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is Si
3n
4uV-cured resin layer 22 comprise 15% shellac, 13% glycerol, 0.1% lead oxide, 5% toluene di-isocyanate(TDI), 12% trimethylolpropane, 0.8% hydroquinones, 20% oxolane, 11% HEMA, the dibutyl tin laurate of 0.1%, 3% 2,2-dimethoxy-phenylf ketone and 20% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[Si
3n
4(200nm)/UV-cured resin (100nm)]
12
Preparation method is similar to embodiment 13.
Embodiment 16
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 15% shellac, 15% glycerol, 0.2% lead oxide, 7% toluene di-isocyanate(TDI), 11% trimethylolpropane, 0.8% hydroquinones, 12% oxolane, 11% HEMA, the dibutyl tin laurate of 2%, 3% 2,2-dimethoxy-phenylf ketone and 23% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
8
Preparation method is similar to embodiment 13.
Embodiment 17
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 11% shellac, 11% glycerol, 0.4% lead oxide, 6% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.6% hydroquinones, 11% oxolane, 7% HEMA, the dibutyl tin laurate of 1%, 7% 2,2-dimethoxy-phenylf ketone and 35% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
4
Preparation method is similar to embodiment 13.
Embodiment 18
As shown in Figure 3,1 is organic thin film transistor device, and hearth electrode 18 is ITO, insulating barrier 19 is polymethyl methacrylate (PMMA), carrier blocking layers 20 is pentacene (Pentacene), and top electrode 23 is Au, and inorganic encapsulated material layer 21 is SiO
2uV-cured resin layer 22 comprise 19% shellac, 11% glycerol, 0.095% lead oxide, 6% toluene di-isocyanate(TDI), 10% trimethylolpropane, 0.005% hydroquinones, 12% oxolane, 8% HEMA, the dibutyl tin laurate of 3%, 3.9% 2,2-dimethoxy-phenylf ketone and 27% three hydroxyl methyl alcohol propane triacrylate, periodicity n is 12, and device architecture is:
Si substrate/ITO (180nm)/PMMA (400nm)/Pentacene (80nm)/Au (100nm)/[SiO
2(200nm)/UV-cured resin (500nm)]
1
Preparation method is similar to embodiment 13.
Comparative example 1
As shown in Figure 4,1 is organic electroluminescence device, anode layer 12 is ITO, and hole transmission layer 13 is N, N '-two (naphthal-1-yl)-N, N '-two (phenyl)-benzidine (NPB), electron transfer layer 14 is 1,3,5-(three N-phenyl-2-benzimidazolyl-2 radicals) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, and device architecture is:
Glass substrate/ITO/NPB (50nm)/TPBi (30nm)/Mg:Ag (200nm)
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water ultrasonic cleaning substrate and dry up with nitrogen;
2. clean substrate is reached high vacuum evaporation room, keep the pressure of organic chamber and wire chamber to be 3.0 × 10 respectively
-4pa and 3.0 × 10
-3below Pa, utilizes high vacuum vapor deposition method to prepare each organic function layer and cathode metal layer;
3. life-span of test component and parameters thereof.
Table 1: the performance comparison in the opto-electronic device life-span of comparative example 1 and embodiment 1,2,3,4,5,6.
Claims (8)
1. the encapsulating structure of an opto-electronic device, comprise the thin-film encapsulation layer for coated opto-electronic device, it is characterized in that, thin-film encapsulation layer is made up of so that periodicity n is alternately stacked inorganic encapsulated material layer and UV-cured resin layer, wherein, 1≤n≤20, described UV-cured resin is made up of the component of following mass percent:
2. the encapsulating structure of opto-electronic device according to claim 1, it is characterized in that, described inorganic encapsulated material is metal oxide or metal sulfide or metal nitride, metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al2O3), chrome green, tin ash, one or more in nickel oxide or antimony pentoxide, metal sulfide is titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, trisulfides two lanthanums, one or more in cerium sulphide or curing zirconium, metal nitride is one or both in silicon nitride or aluminium nitride.
3. a method for packing for opto-electronic device, is characterized in that, comprises the following steps:
1. opto-electronic device is prepared;
2. on prepared opto-electronic device, inorganic encapsulated material layer is prepared;
3. on inorganic encapsulated material layer, UV-cured resin layer is prepared;
4. ultraviolet light polymerization process is carried out 30 seconds in the opto-electronic device surface after 3. processing step;
5. to the device after ultraviolet light polymerization, continue to repeat step operation 2., 3. and 4., repeat n-1 time continuously, 1≤n≤20;
6. life-span of device and other parameters after test package.
4. the method for packing of opto-electronic device according to claim 3, it is characterized in that, described inorganic encapsulated material layer and UV-cured resin layer pass through vacuum evaporation, ionized cluster beam deposition, ion plating, DC sputtering deposition, RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, catalyst chemical vapour deposition (CVD), magnetron sputtering, inkjet printing, plating, spraying, spin coating, dip-coating, one or several modes in roller coat or LB film and being formed.
5. the method for packing of opto-electronic device according to claim 3, is characterized in that, described opto-electronic device is between a kind of photoelectricity, electric between or the device of signal and power conversion can be carried out between electric light.
6. the method for packing of opto-electronic device according to claim 5, it is characterized in that, opto-electronic device is organic electroluminescent LED, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors or photo-detector.
7. the method for packing of opto-electronic device according to claim 3, is characterized in that, UV-cured resin is made up of the component of following mass percent:
8. the method for packing of opto-electronic device according to claim 3, it is characterized in that, described inorganic encapsulated material is metal oxide or metal sulfide or metal nitride, metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, cupric oxide, zinc oxide, alundum (Al2O3), chrome green, tin ash, one or more in nickel oxide or antimony pentoxide, metal sulfide is titanium disulfide, iron sulfide, chromium hemitrisulfide, copper sulfide, zinc sulphide, stannic disulfide, nickel sulfide, cobalt sesquisulfide, antimonous sulfide, vulcanized lead, trisulfides two lanthanums, one or more in cerium sulphide or curing zirconium, metal nitride is one or both in silicon nitride or aluminium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510211639.9A CN104882528A (en) | 2015-04-29 | 2015-04-29 | Packaging structure and packaging method of optoelectronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510211639.9A CN104882528A (en) | 2015-04-29 | 2015-04-29 | Packaging structure and packaging method of optoelectronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104882528A true CN104882528A (en) | 2015-09-02 |
Family
ID=53949939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510211639.9A Pending CN104882528A (en) | 2015-04-29 | 2015-04-29 | Packaging structure and packaging method of optoelectronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104882528A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900604A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
| CN107144704A (en) * | 2017-04-24 | 2017-09-08 | 北京科技大学 | A kind of self-driven ultraviolet light senses integrated system with wind speed |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214804A (en) * | 2011-05-20 | 2011-10-12 | 电子科技大学 | Method for encapsulating photo-electronic device |
| CN102299121A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299122A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299119A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299120A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Packaging method of optoelectronic device |
| WO2013178537A1 (en) * | 2012-05-31 | 2013-12-05 | Basf Se | Binding agent |
| CN104900813A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
| CN104900604A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
-
2015
- 2015-04-29 CN CN201510211639.9A patent/CN104882528A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214804A (en) * | 2011-05-20 | 2011-10-12 | 电子科技大学 | Method for encapsulating photo-electronic device |
| CN102299121A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299122A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299119A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Method for packaging photoelectronic device |
| CN102299120A (en) * | 2011-05-20 | 2011-12-28 | 电子科技大学 | Packaging method of optoelectronic device |
| WO2013178537A1 (en) * | 2012-05-31 | 2013-12-05 | Basf Se | Binding agent |
| CN104900813A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
| CN104900604A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900604A (en) * | 2015-04-29 | 2015-09-09 | 电子科技大学 | Encapsulation structure and encapsulation method of optoelectronic device |
| CN107144704A (en) * | 2017-04-24 | 2017-09-08 | 北京科技大学 | A kind of self-driven ultraviolet light senses integrated system with wind speed |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102666369B (en) | Thin film forming method and quantum dot device | |
| US20110100458A1 (en) | Multi-layer thin film for encapsulation and method thereof | |
| CN102270742B (en) | Organic optoelectronic device wrapper and device packaging method | |
| WO2007013496A1 (en) | Organic power generating device | |
| CN104849336B (en) | Organic field effect tube gas sensor and preparation method thereof | |
| CN102299119A (en) | Method for packaging photoelectronic device | |
| WO2011158874A1 (en) | Organic thin film solar cell | |
| CN110838547A (en) | Vacuum sputtering mixed light-cured resin packaging process for organic electronic device | |
| CN104900813A (en) | Encapsulation structure and encapsulation method of optoelectronic device | |
| CN102299120A (en) | Packaging method of optoelectronic device | |
| CN102214804A (en) | Method for encapsulating photo-electronic device | |
| CN104882528A (en) | Packaging structure and packaging method of optoelectronic device | |
| CN102842683A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN102299121A (en) | Method for packaging photoelectronic device | |
| CN103730594A (en) | Organic light-emitting device and preparation method thereof | |
| CN104900604A (en) | Encapsulation structure and encapsulation method of optoelectronic device | |
| CN103730595A (en) | Organic light-emitting device and preparation method thereof | |
| CN103904246A (en) | Organic electroluminescent device and preparing method thereof | |
| CN101304075B (en) | Organic LED and manufacture method thereof | |
| CN102299122A (en) | Method for packaging photoelectronic device | |
| CN103730593A (en) | Organic light-emitting device and preparation method thereof | |
| CN104900814A (en) | Encapsulation structure and encapsulation method of optoelectronic device | |
| CN104934547A (en) | Packaging structure and method of photoelectronic device | |
| CN103855320B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103855318B (en) | A kind of organic electroluminescence device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150902 |