CN104882528A - Packaging structure and packaging method of optoelectronic device - Google Patents

Packaging structure and packaging method of optoelectronic device Download PDF

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CN104882528A
CN104882528A CN201510211639.9A CN201510211639A CN104882528A CN 104882528 A CN104882528 A CN 104882528A CN 201510211639 A CN201510211639 A CN 201510211639A CN 104882528 A CN104882528 A CN 104882528A
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optoelectronic device
oxide
layer
sulfide
packaging
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于军胜
王煦
范惠东
王瀚雨
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a packaging structure and a packaging method of an optoelectronic device. The packaging structure of the optoelectronic device includes a thin film packaging layer used for wrapping the optoelectronic device, and is characterized in that the thin film packaging layer is formed by alternately overlapping inorganic packaging material layers and ultraviolet curing resin layers with a period number n, wherein 1<=n<=20, ultraviolet curing resin comprises the following components by mass percent: lac, glycerol, lead oxide, toluene diisocynate, trimethylolpropane, hydroquinone, tetrahydrofuran, 2-hydroxyethyl methyl acrylate, dibutyltin dilaurate, 2,2-dimethoxy-phenyl ketone and trimethylolpropane triacrylate. The packaging structure can effectively block oxygen and water in ambient environment, thereby facilitating improvement of stability of the device and prolonging of the life of the device; and at the same time, the packaging method has the characteristics of simple preparation technology and low cost.

Description

一种光电子器件的封装结构及封装方法A packaging structure and packaging method for an optoelectronic device

技术领域technical field

本发明涉及光电子技术领域,具体涉及一种光电子器件的封装结构及封装方法。The invention relates to the field of optoelectronic technology, in particular to a packaging structure and a packaging method of an optoelectronic device.

背景技术Background technique

近10年来,随着光电子技术的迅速发展,发光二极管、有机发光二极管、太阳能电池、薄膜晶体管等光电子产品已逐步发展成熟,极大的改善了人们的生活,成为最具前景的高科技产业。同时,光电子信息技术在社会生活各个领域的广泛应用,也创造了日益增长的巨大市场,光电子信息领域的竞争正在世界范围展开,必将成为未来电子信息领域最为活跃的研究方向。In the past 10 years, with the rapid development of optoelectronic technology, optoelectronic products such as light-emitting diodes, organic light-emitting diodes, solar cells, and thin-film transistors have gradually matured, greatly improving people's lives, and becoming the most promising high-tech industry. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market. The competition in the field of optoelectronic information is unfolding worldwide, and it will surely become the most active research direction in the field of electronic information in the future.

光电子器件主要包括有机电致发光器件、无机发光二极管、有机太阳能电池、无机太阳能电池、有机薄膜晶体管、无机薄膜晶体管、紫外光探测器、红外光探测器等,因其低碳环保的特性符合当下倡导的绿色生活主题而成为了最具发展潜力和应用市场的光电子器件。虽然有机光电子器件具有优良的性能,但仍然存在一些亟待解决的问题:由于其组成部分大都是采用有机材料制备在刚性(如玻璃或硅片)或柔性基板上,而有机材料本身对外界环境具有很强的敏感性,随着时间的推移,大气环境中的水和氧等成分会对材料产生严重的负面作用,从而未封装的器件在大气环境中放置后会使得器件性能逐渐降低,甚至完全失去性能。具体来说,氧气使有机材料产生氧化而会生成羰基化合物,此化合物是严重的淬灭剂,另外,材料变质就会形成黑斑,并伴随器件性能下降。水汽的影响更显而易见,它的主要破坏方式是导电电极对有机层化合物的水解作用,使稳定性大大下降。因此,对有机光电子器件进行封装,提高其使用寿命,抑制其性能的退化与失效,就显得十分必要,为而采用何种封装材料以及何种封装方法也就成了解决问题的另一个突破点。Optoelectronic devices mainly include organic electroluminescent devices, inorganic light-emitting diodes, organic solar cells, inorganic solar cells, organic thin film transistors, inorganic thin film transistors, ultraviolet light detectors, infrared light detectors, etc., because of their low-carbon and environmental protection characteristics in line with the current The theme of green life advocated has become the optoelectronic device with the most development potential and application market. Although organic optoelectronic devices have excellent performance, there are still some problems to be solved: since most of their components are made of organic materials on rigid (such as glass or silicon wafer) or flexible substrates, and the organic materials themselves are harmful to the external environment. Strong sensitivity, as time goes by, the components such as water and oxygen in the atmospheric environment will have a serious negative effect on the material, so that the performance of the unpackaged device will gradually decrease after being placed in the atmospheric environment, or even completely Lost performance. Specifically, oxygen oxidizes organic materials to generate carbonyl compounds, which are serious quenchers. In addition, black spots are formed when materials deteriorate, and device performance declines. The influence of water vapor is more obvious, and its main damage mode is the hydrolysis of the organic layer compound by the conductive electrode, which greatly reduces the stability. Therefore, it is very necessary to package organic optoelectronic devices, improve their service life, and suppress their performance degradation and failure. What kind of packaging materials and packaging methods are used for this has become another breakthrough point to solve the problem. .

发明内容Contents of the invention

本发明所要解决的技术问题是如何提供一种光电子器件的封装方法,该封装方法解决了光电子器件对水和氧气等的敏感性问题,能够增强器件对水和氧的阻隔能力,提高了器件的稳定性和寿命。The technical problem to be solved by the present invention is how to provide a packaging method for optoelectronic devices. This packaging method solves the problem of sensitivity of optoelectronic devices to water and oxygen, etc., can enhance the barrier ability of the device to water and oxygen, and improve the performance of the device. stability and longevity.

本发明所提出的技术问题是这样解决的:一种光电子器件的封装结构,包括用于包覆光电子器件的薄膜封装层,薄膜封装层由无机封装材料层和紫外光固化树脂层以周期数n交替重叠组成,其中,1≤n≤20,所述紫外光固化树脂由以下质量百分比的组份组成:The technical problem proposed by the present invention is solved in this way: a packaging structure of an optoelectronic device includes a thin film encapsulation layer for coating an optoelectronic device, and the thin film encapsulation layer is composed of an inorganic encapsulation material layer and an ultraviolet light curing resin layer with a cycle number n Alternate overlapping composition, wherein, 1≤n≤20, the ultraviolet curable resin is composed of the following components in mass percentage:

本发明的封装结构中,所述无机封装材料为金属氧化物或金属硫化物或金属氮化物,金属氧化物为氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍或五氧化二锑中的一种或多种,金属硫化物为二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈或二硫化锆中的一种或多种,金属氮化物为氮化硅或氮化铝中的一种或两种。In the packaging structure of the present invention, the inorganic packaging material is metal oxide or metal sulfide or metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, three One or more of aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide, iron sulfide, chromium trisulfide, copper sulfide, zinc sulfide, One or more of tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide, the metal nitride is silicon nitride or aluminum nitride one or both of them.

本发明还公开了一种光电子器件的封装方法,包括以下步骤:The invention also discloses a packaging method of an optoelectronic device, comprising the following steps:

①制备光电子器件;① Preparation of optoelectronic devices;

②在所制备的光电子器件上制备无机封装材料层;②Preparing an inorganic packaging material layer on the prepared optoelectronic device;

③在无机封装材料层上制备紫外光固化树脂层;③Preparing a UV curable resin layer on the inorganic packaging material layer;

④对步骤③处理后的光电子器件表面进行紫外光固化处理30秒;④UV curing treatment for 30 seconds on the surface of the optoelectronic device treated in step ③;

⑤对紫外光固化后的器件,继续重复步骤②、③和④的操作,连续重复n-1次,1≤n≤20;⑤For the device after UV curing, continue to repeat steps ②, ③ and ④, and repeat n-1 times continuously, 1≤n≤20;

⑥测试封装后器件的寿命以及其他各项参数。⑥ Test the life of the packaged device and other parameters.

本发明的封装方法中,所述无机封装材料层和紫外光固化树脂层是通过真空蒸镀、离子团束沉积、离子镀、直流溅射镀膜、RF溅射镀膜、离子束溅射镀膜、离子束辅助沉积、等离子增强化学气相沉积、高密度电感耦合式等离子体源化学气相沉积、触媒式化学气相沉积、磁控溅射、喷墨打印、电镀、喷涂、旋涂、浸涂、辊涂或LB膜中的一种或者几种方式而形成。In the packaging method of the present invention, the inorganic packaging material layer and the UV-curable resin layer are formed by vacuum evaporation, ion beam deposition, ion plating, direct current sputtering coating, RF sputtering coating, ion beam sputtering coating, ion beam sputtering coating, Beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, catalytic chemical vapor deposition, magnetron sputtering, inkjet printing, electroplating, spray coating, spin coating, dip coating, roll coating or One or several ways in the LB film are formed.

本发明的封装方法中,所述光电子器件是一种光电之间、电电之间或电光之间可以进行信号和能量转换的器件。In the packaging method of the present invention, the optoelectronic device is a device that can perform signal and energy conversion between optoelectronics, electro-electrics or electro-optics.

本发明的封装方法中,光电子器件为有机电致发光二极管、无机发光二极管、有机太阳能电池、无机太阳能电池、有机薄膜晶体管、无机薄膜晶体管或光探测器。In the packaging method of the present invention, the optoelectronic device is an organic electroluminescent diode, an inorganic light emitting diode, an organic solar cell, an inorganic solar cell, an organic thin film transistor, an inorganic thin film transistor or a photodetector.

本发明的封装方法中,紫外光固化树脂由以下质量百分比的组份组成:In the packaging method of the present invention, the ultraviolet light curing resin is composed of the following components in mass percentage:

本发明的封装方法中,所述无机封装材料为金属氧化物或金属硫化物或金属氮化物,金属氧化物为氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍或五氧化二锑中的一种或多种,金属硫化物为二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈或二硫化锆中的一种或多种,金属氮化物为氮化硅或氮化铝中的一种或两种。In the packaging method of the present invention, the inorganic packaging material is metal oxide or metal sulfide or metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, three One or more of aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide, iron sulfide, chromium trisulfide, copper sulfide, zinc sulfide, One or more of tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide, the metal nitride is silicon nitride or aluminum nitride one or both of them.

本发明的有益效果:本发明的光电子器件的封装材料中,有机封装材料较为稀缺,本发明提供一种常规的、有效的有机封装材料,由于有机封装材料具备良好的紫外敏感特性,在制备光电子器件后对衬底进行适当的紫外处理。有机紫外光固化树脂具有良好的固化剂性、稳定性、粘结强度、透光度和高纯度,采用本发明中提供的各种优选比例和工艺参数,能够获得更优的器件性能。本发明的封装层采用无机封装材料薄层和所述的有机紫外光固化树脂薄层交替重叠组成,不仅能够降低成本,简化工艺,重要的是可以很好地提高器件稳定性,延长器件寿命。Beneficial effects of the present invention: Among the packaging materials of optoelectronic devices of the present invention, organic packaging materials are relatively scarce. The present invention provides a conventional and effective organic packaging material. Because the organic packaging material has good ultraviolet sensitivity characteristics, it is suitable for preparing optoelectronic devices. Appropriate UV treatment of the substrate after the device. The organic UV-curable resin has good curing agent properties, stability, bonding strength, light transmittance and high purity. Using various preferred ratios and process parameters provided in the present invention, better device performance can be obtained. The encapsulation layer of the present invention is composed of thin layers of inorganic encapsulation material and thin layers of organic ultraviolet curable resin alternately overlapped, which can not only reduce the cost and simplify the process, but also can improve the stability of the device and prolong the service life of the device.

本发明采用薄膜封装技术,提出一种低成本且工艺简单的封装方法,能够大大提高器件对氧气和水汽等的阻隔作用,降低工艺难度和提高器件稳定性。通过解决上述这些问题,将会使光电子器件得到更为广泛的应用和更加快速的发展。The invention adopts thin-film packaging technology and proposes a packaging method with low cost and simple process, which can greatly improve the barrier effect of devices on oxygen and water vapor, reduce process difficulty and improve device stability. By solving the above-mentioned problems, optoelectronic devices will be more widely used and developed more rapidly.

附图说明Description of drawings

图1是本发明所提供的实施例1、2、3、4、5、6的光电子器件封装结构示意图;Fig. 1 is a schematic diagram of the optoelectronic device packaging structure of the embodiments 1, 2, 3, 4, 5, and 6 provided by the present invention;

图2是本发明所提供的实施例7、8、9、10、11、12的光电子器件封装结构示意图;Fig. 2 is a schematic diagram of the packaging structure of the optoelectronic device of the embodiments 7, 8, 9, 10, 11 and 12 provided by the present invention;

图3是本发明所提供的实施例13、14、15、16、17、18的光电子器件封装结构示意图;Fig. 3 is a schematic diagram of the optoelectronic device packaging structure of the embodiments 13, 14, 15, 16, 17, 18 provided by the present invention;

图4是本发明所提供的对比实施例1的光电子器件结构示意图;Fig. 4 is a schematic structural view of the optoelectronic device of Comparative Example 1 provided by the present invention;

其中,1是光电子器件,11、衬底,12、阳极层,13、空穴传输层,14、电子传输层,15、阴极层,16、电子给体层,17、电子受体层,18、底电极,19、绝缘层,20、载流子传输层,23、顶电极,2是本发明的薄膜封装层,由无机封装材料层21和紫外光固化树脂层22以一定的周期数n交替重叠构成。Among them, 1 is an optoelectronic device, 11, substrate, 12, anode layer, 13, hole transport layer, 14, electron transport layer, 15, cathode layer, 16, electron donor layer, 17, electron acceptor layer, 18 , bottom electrode, 19, insulating layer, 20, carrier transport layer, 23, top electrode, 2 is the thin film encapsulation layer of the present invention, by inorganic encapsulation material layer 21 and ultraviolet light curable resin layer 22 with certain cycle number n Alternate overlapping composition.

具体实施方式Detailed ways

虫胶是由一种紫胶虫寄生于一些豆科植物树枝上吸食树汁后分泌的一种紫红色天然树脂,也被称为紫胶,具有独特的优良特性,被广泛应用于食品、医药、塑料、军事、电气、橡胶、油墨、皮革、涂料、染料和粘合剂等行业。虫胶无毒,目前在医药工业中主要用于药丸药片的防潮糖衣、药品密封、上光、肠溶药包衣和近年发展起来的营养物与化妆品的胶囊等。虫胶涂料同样可用于食品工业的很多方面,可被人体吸收、可自然降解,例如糖果和糕点涂了虫胶涂料之后,可变得甚为美观、光亮,可以防潮、防结块、防变质和延长贮存时间等。水果用虫胶涂料涂膜后,能在一定时期内抑制水分蒸发,保持新鲜,减少腐烂,改善外观,产生提高经济效益的效果。虫胶产品具有较好的抗张强度、耐磨性、回弹性和硬度,具有理想的机械性能。电学性能方面,虫胶的介电强度高,介电常数低,且在受电弧支配后,无导电性,加上它有良好的粘着性和热塑性,在电器绝缘上有特殊的用途。Shellac is a kind of purple-red natural resin secreted by a kind of lac insect that parasitizes on the branches of some leguminous plants and sucks the sap. It is also called lac. It has unique and excellent properties and is widely used in food and medicine. , plastics, military, electrical, rubber, ink, leather, paint, dye and adhesive industries. Shellac is non-toxic, and is mainly used in the pharmaceutical industry for moisture-proof sugar coating of pills and tablets, drug sealing, glazing, enteric drug coating, and capsules of nutrients and cosmetics developed in recent years. Shellac coatings can also be used in many aspects of the food industry. They can be absorbed by the human body and can be naturally degraded. For example, after coating shellac coatings on candies and cakes, they can become very beautiful and bright, and can prevent moisture, caking and deterioration. and prolong storage time. After fruit is coated with shellac paint, it can suppress water evaporation in a certain period of time, keep fresh, reduce rot, improve appearance, and produce the effect of improving economic benefits. Shellac products have good tensile strength, abrasion resistance, resilience and hardness, and have ideal mechanical properties. In terms of electrical properties, shellac has high dielectric strength, low dielectric constant, and is non-conductive after being dominated by an arc. In addition, it has good adhesion and thermoplasticity, and has special uses in electrical insulation.

实施例1Example 1

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Al2O3,紫外光固化树脂层22包括58%的虫胶、3%的丙三醇、0.97%的氧化铅、4%的甲苯二异氰酸酯、9%的三甲醇基丙烷、0.01%的对苯二酚、11%的四氢呋喃、7%的2-羟乙基甲基丙烯酸酯、0.02%的二月桂酸二丁基锡、2%的2,2-二甲氧基-苯基甲酮和5%的三羟甲醇丙烷三丙烯酸酯,周期数n为20,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 58% shellac, 3% glycerol, 0.97% lead oxide, 4% toluene diisocyanate, 9% trimethanol propane, 0.01% hydroquinone, 11% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.02% dibutyltin dilaurate, 2% 2,2-dimethoxy- Phenyl ketone and 5% trimethylol propane triacrylate, the number of cycles n is 20, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al2O3(200nm)/紫外光固化树脂(100nm)]20 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al 2 O 3 (200nm)/UV curable resin (100nm)] 20

制备方法如下:The preparation method is as follows:

①利用洗涤剂、丙酮溶液、乙醇溶液和去离子水超声清洗基片并用氮气吹干;①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

②将干净的基片传至高真空蒸发室,分别保持有机腔和金属腔的压强为3.0×10-4Pa和3.0×10-3Pa以下,利用高真空蒸镀方法制备各有机功能层以及阴极金属层;② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 -4 Pa and 3.0×10 -3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③对上述制备的有机电致发光器件,利用等离子增强型化学气象沉积(以下简称PECVD)方法制备无机封装材料Al2O3,沉积的厚度为200nm;③ For the organic electroluminescent device prepared above, the inorganic packaging material Al 2 O 3 was prepared by plasma-enhanced chemical vapor deposition (hereinafter referred to as PECVD), and the thickness of the deposition was 200nm;

④将器件传至具有紫外光固化树脂的腔体内,并喷涂紫外光固化树脂,喷④Pass the device into the cavity with UV curable resin, and spray UV curable resin, spray

涂的厚度为100nm;The coating thickness is 100nm;

⑤对器件进行紫外光固化处理30秒;⑤UV curing the device for 30 seconds;

⑥重复上述步骤③~⑤,再制备周期数为(n-1)的无机封装材料和紫外光固化树脂交替组成的薄膜层;⑥Repeat the above steps ③~⑤, and then prepare a thin film layer composed of inorganic packaging materials and ultraviolet curing resins with a cycle number of (n-1) alternately;

⑦测试器件的寿命及其各项参数。⑦ Test the life of the device and its various parameters.

实施例2Example 2

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Al2O3,紫外光固化树脂层22包括53%的虫胶、5%的丙三醇、0.005%的氧化铅、4%的甲苯二异氰酸酯、9%的三甲醇基丙烷、0.005%的对苯二酚、12%的四氢呋喃、7%的2-羟乙基甲基丙烯酸酯,0.99%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和6%的三羟甲醇丙烷三丙烯酸酯,周期数n为16,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 53% shellac, 5% glycerol, 0.005% lead oxide, 4% toluene diisocyanate, 9% trimethanol propane, 0.005% hydroquinone, 12% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.99% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 6% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al2O3(200nm)/紫外光固化树脂(100nm)]16 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al 2 O 3 (200nm)/UV curable resin (100nm)] 16

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例3Example 3

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Al2O3,紫外光固化树脂层22包括39%的虫胶、5%的丙三醇、0.003%的氧化铅、7%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.097%的对苯二酚、10%的四氢呋喃、7.9%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、9%的2,2-二甲氧基-苯基甲酮和11%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 39% shellac, 5% glycerol, 0.003% lead oxide, 7% toluene diisocyanate, 10% trimethanol propane, 0.097% hydroquinone, 10% tetrahydrofuran, 7.9% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 9% 2,2-dimethoxy- Phenyl ketone and 11% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al2O3(200nm)/紫外光固化树脂(100nm)]12 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al 2 O 3 (200nm)/UV curable resin (100nm)] 12

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例4Example 4

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Si3N4,紫外光固化树脂层22包括10%的虫胶、30%的丙三醇、1%的氧化铅、10%的甲苯二异氰酸酯、9%的三甲醇基丙烷、0.5%的对苯二酚、15%的四氢呋喃、10%的2-羟乙基甲基丙烯酸酯、2%的二月桂酸二丁基锡、5%的2,2-二甲氧基-苯基甲酮和7.5%的三羟甲醇丙烷三丙烯酸酯,周期数n为8,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si 3 N 4 , the UV curable resin layer 22 includes 10% shellac, 30% glycerol, 1% lead oxide, 10% toluene diisocyanate, 9% trimethanol propane, 0.5% hydroquinone, 15% tetrahydrofuran, 10% 2-hydroxyethyl methacrylate, 2% dibutyltin dilaurate, 5% 2,2-dimethoxy- Phenyl ketone and 7.5% trimethylol propane triacrylate, the number of cycles n is 8, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si3N4(500nm)/紫外光固化树脂(500nm)]8 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si 3 N 4 (500nm)/UV curable resin (500nm)] 8

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例5Example 5

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Si3N4,紫外光固化树脂层22包括8%的虫胶、5%的丙三醇、0.8%的氧化铅、32%的甲苯二异氰酸酯、13%的三甲醇基丙烷、0.8%的对苯二酚、13%的四氢呋喃、13%的2-羟乙基甲基丙烯酸酯、0.4%的二月桂酸二丁基锡、4%的2,2-二甲氧基-苯基甲酮和10%的三羟甲醇丙烷三丙烯酸酯,周期数n为4,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si 3 N 4 , the UV curable resin layer 22 includes 8% shellac, 5% glycerin, 0.8% lead oxide, 32% toluene diisocyanate, 13% trimethanol propane, 0.8% hydroquinone, 13% tetrahydrofuran, 13% 2-hydroxyethyl methacrylate, 0.4% dibutyltin dilaurate, 4% 2,2-dimethoxy- Phenyl ketone and 10% trimethylol propane triacrylate, the number of cycles n is 4, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al2O3(500nm)/紫外光固化树脂(500nm)]4 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Al 2 O 3 (500nm)/UV curable resin (500nm)] 4

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例6Example 6

如图1所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,无机封装材料层21为Si3N4,紫外光固化树脂层22包括10%的虫胶、9%的丙三醇、1%的氧化铅、6%的甲苯二异氰酸酯、41%的三甲醇基丙烷、0.8%的对苯二酚、10%的四氢呋喃、8%的2-羟乙基甲基丙烯酸酯、1.2%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和10%的三羟甲醇丙烷三丙烯酸酯,周期数n为1,器件结构为:As shown in Figure 1, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the inorganic packaging material layer 21 is Si 3 N 4 , the UV curable resin layer 22 includes 10% shellac, 9% glycerol, 1% lead oxide, 6% toluene diisocyanate, 41% trimethanol propane, 0.8% hydroquinone, 10% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1.2% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 10% trimethylol propane triacrylate, the number of cycles n is 1, and the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si3N4(500nm)/紫外光固化树脂(500nm)]1 Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)/[Si 3 N 4 (500nm)/UV curable resin (500nm)] 1

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例7Example 7

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为Al2O3,紫外光固化树脂层22包括13%的虫胶、4%的丙三醇、1.5%的氧化铅、5%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.5%的对苯二酚、42%的四氢呋喃、8%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和12%的三羟甲醇丙烷三丙烯酸酯,周期数n为20,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 13% shellac, 4% glycerol, 1.5% lead oxide, 5% toluene diisocyanate, 10% tris Methyl propane, 0.5% hydroquinone, 42% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 3% 2,2-dimethoxy -Phenyl ketone and 12% trimethylol propane triacrylate, the number of cycles n is 20, the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[Al2O3(100nm)/紫外光固化树脂(80nm)]20 Glass substrate/ITO/CuPc(20nm)/C 60 (40nm)/Ag(150nm)/[Al 2 O 3 (100nm)/UV curable resin (80nm)] 20

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例8Example 8

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为Al2O3,紫外光固化树脂层22包括9%的虫胶、14%的丙三醇、1%的氧化铅、6%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.6%的对苯二酚、12%的四氢呋喃、8%的2-羟乙基甲基丙烯酸酯、1.4%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和35%的三羟甲醇丙烷三丙烯酸酯,周期数n为16,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 9% shellac, 14% glycerol, 1% lead oxide, 6% toluene diisocyanate, 10% tris Methyl propane, 0.6% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 1.4% dibutyltin dilaurate, 3% 2,2-dimethoxy -Phenyl ketone and 35% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[Al2O3(100nm)/紫外光固化树脂(80nm)]16 Glass substrate/ITO/CuPc(20nm)/C 60 (40nm)/Ag(150nm)/[Al 2 O 3 (100nm)/UV curable resin (80nm)] 16

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例9Example 9

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为Al2O3,紫外光固化树脂层22包括40%的虫胶、6%的丙三醇、0.97%的氧化铅、5%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.01%的对苯二酚、12%的四氢呋喃、8%的2-羟乙基甲基丙烯酸酯、0.02%的二月桂酸二丁基锡、9%的2,2-二甲氧基-苯基甲酮和9%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is Al 2 O 3 , the UV curable resin layer 22 includes 40% shellac, 6% glycerol, 0.97% lead oxide, 5% toluene diisocyanate, 10% tris Methyl propane, 0.01% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 0.02% dibutyltin dilaurate, 9% 2,2-dimethoxy -Phenyl ketone and 9% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[Al2O3(100nm)/紫外光固化树脂(80nm)]12 Glass substrate/ITO/CuPc(20nm)/C 60 (40nm)/Ag(150nm)/[Al 2 O 3 (100nm)/UV curable resin (80nm)] 12

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例10Example 10

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为SiO2,紫外光固化树脂层22包括28%的虫胶、12%的丙三醇、1%的氧化铅、5%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.5%的对苯二酚、15%的四氢呋喃、7%的2-羟乙基甲基丙烯酸酯、0.5%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和18%的三羟甲醇丙烷三丙烯酸酯,周期数n为20,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO 2 , the UV curable resin layer 22 includes 28% shellac, 12% glycerol, 1% lead oxide, 5% toluene diisocyanate, 10% trimethylol Propane, 0.5% hydroquinone, 15% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 0.5% dibutyltin dilaurate, 3% 2,2-dimethoxy-benzene Methyl ketone and 18% trimethylol propane triacrylate, the number of cycles n is 20, and the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[SiO2(300nm)/紫外光固化树脂(500nm)]8 Glass substrate/ITO/CuPc(20nm)/C 60 (40nm)/Ag(150nm)/[SiO 2 (300nm)/UV curable resin (500nm)] 8

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例11Example 11

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为SiO2,紫外光固化树脂层22包括30%的虫胶、5%的丙三醇、1%的氧化铅、7%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.8%的对苯二酚、15%的四氢呋喃、10.2%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、8%的2,2-二甲氧基-苯基甲酮和12%的三羟甲醇丙烷三丙烯酸酯,周期数n为16,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO 2 , the UV curable resin layer 22 includes 30% shellac, 5% glycerol, 1% lead oxide, 7% toluene diisocyanate, 10% trimethylol Propane, 0.8% hydroquinone, 15% tetrahydrofuran, 10.2% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 8% 2,2-dimethoxy-benzene Methyl ketone and 12% trimethylol propane triacrylate, the number of cycles n is 16, and the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[SiO2(300nm)/紫外光固化树脂(500nm)]4 Glass substrate/ITO/CuPc(20nm)/C 60 (40nm)/Ag(150nm)/[SiO 2 (300nm)/UV curable resin (500nm)] 4

制备方法与实施例1相似。The preparation method is similar to Example 1.

实施例12Example 12

如图2所示,1为有机太阳能电池器件,阳极层12为ITO,电子给体层16为酞菁铜(CuPc),电子受体层17为富勒烯(C60),阴极层15为Ag,无机封装材料层21为SiO2,紫外光固化树脂层22包括11%的虫胶、30%的丙三醇、0.85%的氧化铅、13%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.08%的对苯二酚、12%的四氢呋喃、10%的2-羟乙基甲基丙烯酸酯、0.07%的二月桂酸二丁基锡、6%的2,2-二甲氧基-苯基甲酮和7%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 2, 1 is an organic solar cell device, the anode layer 12 is ITO, the electron donor layer 16 is copper phthalocyanine (CuPc), the electron acceptor layer 17 is fullerene (C 60 ), and the cathode layer 15 is Ag, the inorganic packaging material layer 21 is SiO 2 , the UV curable resin layer 22 includes 11% shellac, 30% glycerin, 0.85% lead oxide, 13% toluene diisocyanate, 10% trimethylol Propane, 0.08% hydroquinone, 12% tetrahydrofuran, 10% 2-hydroxyethyl methacrylate, 0.07% dibutyltin dilaurate, 6% 2,2-dimethoxy-benzene Methyl ketone and 7% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

玻璃衬底/ITO/CuPc(20nm)/C60(40nm)/Ag(150nm)/[SiO2(300nm)/紫外光固化树脂(500nm)]1制备方法与实施例1相似。Glass substrate/ITO/CuPc (20nm)/C 60 (40nm)/Ag (150nm)/[SiO 2 (300nm)/UV curable resin (500nm)] 1 The preparation method is similar to that of Example 1.

实施例13Example 13

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为Si3N4,紫外光固化树脂层22包括10%的虫胶、20%的丙三醇、0.5%的氧化铅、32%的甲苯二异氰酸酯、9%的三甲醇基丙烷、0.5%的对苯二酚、10%的四氢呋喃、7%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和7%的三羟甲醇丙烷三丙烯酸酯,周期数n为20,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si 3 N 4 , and the UV curable resin layer 22 includes 10% shellac, 20% glycerol, 0.5% lead oxide, 32% toluene diisocyanate, 9% Trimethylol propane, 0.5% hydroquinone, 10% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 3% 2,2-dimethoxy Base-phenyl ketone and 7% trimethylol propane triacrylate, the number of cycles n is 20, the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si3N4(200nm)/紫外光固化树脂(100nm)]20 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si 3 N 4 (200nm)/UV curable resin (100nm)] 20

制备方法如下:The preparation method is as follows:

①利用洗涤剂、丙酮溶液、乙醇溶液和去离子水超声清洗基片并用氮气吹干;①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

②将干净的基片传至高真空蒸发室,分别保持有机腔和金属腔的压强为3.0×10-4Pa和3.0×10-3Pa以下,利用高真空蒸镀方法制备各有机功能层以及阴极金属层;② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 -4 Pa and 3.0×10 -3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③对上述制备的有机薄膜晶体管器件,利用等离子增强型化学气象沉积(以下简称PECVD)方法制备无机封装材料Si3N4,沉积的厚度为200nm;③ For the organic thin film transistor device prepared above, the inorganic packaging material Si 3 N 4 was prepared by plasma-enhanced chemical vapor deposition (hereinafter referred to as PECVD), and the deposited thickness was 200nm;

④将器件传至具有紫外光固化树脂的腔体内,并喷涂紫外光固化树脂,喷涂的厚度为100nm;④Pass the device into the cavity with UV-curable resin, and spray UV-curable resin with a thickness of 100nm;

⑤对器件进行紫外光固化处理30秒;⑤UV curing the device for 30 seconds;

⑥重复上述步骤③~⑤,再制备周期数为(n-1)的无机封装材料和紫外光固化树脂交替组成的薄膜层;⑥Repeat the above steps ③~⑤, and then prepare a thin film layer composed of inorganic packaging materials and ultraviolet curing resins with a cycle number of (n-1) alternately;

⑦测试器件的寿命及其各项参数。⑦ Test the life of the device and its various parameters.

实施例14Example 14

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为Si3N4,紫外光固化树脂层22包括10%的虫胶、42%的丙三醇、0.3%的氧化铅、5%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.7%的对苯二酚、12%的四氢呋喃、9%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、2%的2,2-二甲氧基-苯基甲酮和8%的三羟甲醇丙烷三丙烯酸酯,周期数n为16,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si 3 N 4 , and the UV curable resin layer 22 includes 10% shellac, 42% glycerol, 0.3% lead oxide, 5% toluene diisocyanate, 10% Trimethylol propane, 0.7% hydroquinone, 12% tetrahydrofuran, 9% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 2% 2,2-dimethoxy Base-phenyl ketone and 8% trimethylol propane triacrylate, the number of cycles n is 16, the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si3N4(200nm)/紫外光固化树脂(100nm)]16 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si 3 N 4 (200nm)/UV curable resin (100nm)] 16

制备方法与实施例13相似。The preparation method is similar to Example 13.

实施例15Example 15

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为Si3N4,紫外光固化树脂层22包括15%的虫胶、13%的丙三醇、0.1%的氧化铅、5%的甲苯二异氰酸酯、12%的三甲醇基丙烷、0.8%的对苯二酚、20%的四氢呋喃、11%的2-羟乙基甲基丙烯酸酯、0.1%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和20%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is Si 3 N 4 , and the UV curable resin layer 22 includes 15% shellac, 13% glycerin, 0.1% lead oxide, 5% toluene diisocyanate, 12% Trimethylol propane, 0.8% hydroquinone, 20% tetrahydrofuran, 11% 2-hydroxyethyl methacrylate, 0.1% dibutyltin dilaurate, 3% 2,2-dimethoxy Base-phenyl ketone and 20% trimethylol propane triacrylate, the number of cycles n is 12, the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si3N4(200nm)/紫外光固化树脂(100nm)]12 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[Si 3 N 4 (200nm)/UV curable resin (100nm)] 12

制备方法与实施例13相似。The preparation method is similar to Example 13.

实施例16Example 16

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为SiO2,紫外光固化树脂层22包括15%的虫胶、15%的丙三醇、0.2%的氧化铅、7%的甲苯二异氰酸酯、11%的三甲醇基丙烷、0.8%的对苯二酚、12%的四氢呋喃、11%的2-羟乙基甲基丙烯酸酯、2%的二月桂酸二丁基锡、3%的2,2-二甲氧基-苯基甲酮和23%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO 2 , and the UV curable resin layer 22 includes 15% shellac, 15% glycerol, 0.2% lead oxide, 7% toluene diisocyanate, and 11% trimethanol propane, 0.8% hydroquinone, 12% tetrahydrofuran, 11% 2-hydroxyethyl methacrylate, 2% dibutyltin dilaurate, 3% 2,2-dimethoxy- Phenyl ketone and 23% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO2(200nm)/紫外光固化树脂(500nm)]8 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO 2 (200nm)/UV curable resin (500nm)] 8

制备方法与实施例13相似。The preparation method is similar to Example 13.

实施例17Example 17

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为SiO2,紫外光固化树脂层22包括11%的虫胶、11%的丙三醇、0.4%的氧化铅、6%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.6%的对苯二酚、11%的四氢呋喃、7%的2-羟乙基甲基丙烯酸酯、1%的二月桂酸二丁基锡、7%的2,2-二甲氧基-苯基甲酮和35%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO 2 , and the UV curable resin layer 22 includes 11% shellac, 11% glycerin, 0.4% lead oxide, 6% toluene diisocyanate, and 10% trimethanol propane, 0.6% hydroquinone, 11% tetrahydrofuran, 7% 2-hydroxyethyl methacrylate, 1% dibutyltin dilaurate, 7% 2,2-dimethoxy- Phenyl ketone and 35% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO2(200nm)/紫外光固化树脂(500nm)]4 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO 2 (200nm)/UV curable resin (500nm)] 4

制备方法与实施例13相似。The preparation method is similar to Example 13.

实施例18Example 18

如图3所示,1为有机薄膜晶体管器件,底电极18为ITO,绝缘层19为聚甲基丙烯酸甲酯(PMMA),载流子传输层20为并五苯(Pentacene),顶电极23为Au,无机封装材料层21为SiO2,紫外光固化树脂层22包括19%的虫胶、11%的丙三醇、0.095%的氧化铅、6%的甲苯二异氰酸酯、10%的三甲醇基丙烷、0.005%的对苯二酚、12%的四氢呋喃、8%的2-羟乙基甲基丙烯酸酯、3%的二月桂酸二丁基锡、3.9%的2,2-二甲氧基-苯基甲酮和27%的三羟甲醇丙烷三丙烯酸酯,周期数n为12,器件结构为:As shown in Figure 3, 1 is an organic thin film transistor device, the bottom electrode 18 is ITO, the insulating layer 19 is polymethyl methacrylate (PMMA), the carrier transport layer 20 is pentacene (Pentacene), and the top electrode 23 is Au, the inorganic packaging material layer 21 is SiO 2 , and the UV curable resin layer 22 includes 19% shellac, 11% glycerol, 0.095% lead oxide, 6% toluene diisocyanate, and 10% trimethanol propane, 0.005% hydroquinone, 12% tetrahydrofuran, 8% 2-hydroxyethyl methacrylate, 3% dibutyltin dilaurate, 3.9% 2,2-dimethoxy- Phenyl ketone and 27% trimethylol propane triacrylate, the number of cycles n is 12, and the device structure is:

Si衬底/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO2(200nm)/紫外光固化树脂(500nm)]1 Si substrate/ITO(180nm)/PMMA(400nm)/Pentacene(80nm)/Au(100nm)/[SiO 2 (200nm)/UV curable resin (500nm)] 1

制备方法与实施例13相似。The preparation method is similar to Example 13.

对比实施例1Comparative Example 1

如图4所示,1为有机电致发光器件,阳极层12为ITO,空穴传输层13为N,N’-二(萘亚甲基-1-yl)-N,N’-二(苯基)-联苯胺(NPB),电子传输层14为1,3,5-(三N-苯基-2-苯并咪唑-2)苯41(TPBi),阴极层15为Mg:Ag合金,器件结构为:As shown in Figure 4, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis( Phenyl)-benzidine (NPB), electron transport layer 14 is 1,3,5-(triN-phenyl-2-benzimidazole-2)benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy , the device structure is:

玻璃衬底/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)Glass substrate/ITO/NPB(50nm)/TPBi(30nm)/Mg:Ag(200nm)

制备方法如下:The preparation method is as follows:

①利用洗涤剂、丙酮溶液、乙醇溶液和去离子水超声清洗基片并用氮气吹干;①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

②将干净的基片传至高真空蒸发室,分别保持有机腔和金属腔的压强为3.0×10-4Pa和3.0×10-3Pa以下,利用高真空蒸镀方法制备各有机功能层以及阴极金属层;② Transfer the clean substrate to the high vacuum evaporation chamber, keep the pressure of the organic cavity and the metal cavity below 3.0×10 -4 Pa and 3.0×10 -3 Pa respectively, and prepare each organic functional layer and cathode by high vacuum evaporation method metal layer;

③测试器件的寿命及其各项参数。③ Test the life of the device and its various parameters.

表1:对比实施例1和实施例1、2、3、4、5、6的光电子器件寿命的性能对比。Table 1: Performance comparison of optoelectronic device lifetimes of Comparative Example 1 and Examples 1, 2, 3, 4, 5, and 6.

Claims (8)

1.一种光电子器件的封装结构,包括用于包覆光电子器件的薄膜封装层,其特征在于,薄膜封装层由无机封装材料层和紫外光固化树脂层以周期数n交替重叠组成,其中,1≤n≤20,所述紫外光固化树脂由以下质量百分比的组份组成:1. A packaging structure for an optoelectronic device, comprising a thin film encapsulation layer for covering an optoelectronic device, characterized in that the thin film encapsulation layer is composed of an inorganic encapsulation material layer and an ultraviolet light curable resin layer alternately overlapping with a cycle number n, wherein, 1≤n≤20, the UV curable resin is composed of the following components in mass percentage: 2.根据权利要求1所述的光电子器件的封装结构,其特征在于,所述无机封装材料为金属氧化物或金属硫化物或金属氮化物,金属氧化物为氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍或五氧化二锑中的一种或多种,金属硫化物为二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈或二硫化锆中的一种或多种,金属氮化物为氮化硅或氮化铝中的一种或两种。2. The packaging structure of an optoelectronic device according to claim 1, wherein the inorganic packaging material is a metal oxide or a metal sulfide or a metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide , zirconium dioxide, copper oxide, zinc oxide, aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide and iron sulfide One or more of chromium trisulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide , the metal nitride is one or both of silicon nitride or aluminum nitride. 3.一种光电子器件的封装方法,其特征在于,包括以下步骤:3. A packaging method for an optoelectronic device, comprising the following steps: ①制备光电子器件;① Preparation of optoelectronic devices; ②在所制备的光电子器件上制备无机封装材料层;②Preparing an inorganic packaging material layer on the prepared optoelectronic device; ③在无机封装材料层上制备紫外光固化树脂层;③Preparing a UV curable resin layer on the inorganic packaging material layer; ④对步骤③处理后的光电子器件表面进行紫外光固化处理30秒;④UV curing treatment for 30 seconds on the surface of the optoelectronic device treated in step ③; ⑤对紫外光固化后的器件,继续重复步骤②、③和④的操作,连续重复n-1次,1≤n≤20;⑤For the device after UV curing, continue to repeat steps ②, ③ and ④, and repeat n-1 times continuously, 1≤n≤20; ⑥测试封装后器件的寿命以及其他各项参数。⑥ Test the life of the packaged device and other parameters. 4.根据权利要求3所述的光电子器件的封装方法,其特征在于,所述无机封装材料层和紫外光固化树脂层是通过真空蒸镀、离子团束沉积、离子镀、直流溅射镀膜、RF溅射镀膜、离子束溅射镀膜、离子束辅助沉积、等离子增强化学气相沉积、高密度电感耦合式等离子体源化学气相沉积、触媒式化学气相沉积、磁控溅射、喷墨打印、电镀、喷涂、旋涂、浸涂、辊涂或LB膜中的一种或者几种方式而形成。4. The encapsulation method of optoelectronic device according to claim 3, is characterized in that, described inorganic encapsulation material layer and ultraviolet curable resin layer are by vacuum evaporation, ion group beam deposition, ion plating, DC sputter coating, RF sputtering coating, ion beam sputtering coating, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, catalytic chemical vapor deposition, magnetron sputtering, inkjet printing, electroplating , spray coating, spin coating, dip coating, roll coating or LB film in one or more ways. 5.根据权利要求3所述的光电子器件的封装方法,其特征在于,所述光电子器件是一种光电之间、电电之间或电光之间可以进行信号和能量转换的器件。5 . The packaging method of an optoelectronic device according to claim 3 , wherein the optoelectronic device is a device capable of converting signals and energy between optoelectronics, electro-electrics or electro-optics. 6 . 6.根据权利要求5所述的光电子器件的封装方法,其特征在于,光电子器件为有机电致发光二极管、无机发光二极管、有机太阳能电池、无机太阳能电池、有机薄膜晶体管、无机薄膜晶体管或光探测器。6. The encapsulation method of an optoelectronic device according to claim 5, wherein the optoelectronic device is an organic electroluminescent diode, an inorganic light emitting diode, an organic solar cell, an inorganic solar cell, an organic thin film transistor, an inorganic thin film transistor or a photodetector device. 7.根据权利要求3所述的光电子器件的封装方法,其特征在于,紫外光固化树脂由以下质量百分比的组份组成:7. The encapsulation method of an optoelectronic device according to claim 3, wherein the ultraviolet curable resin is composed of the following components in mass percent: 8.根据权利要求3所述的光电子器件的封装方法,其特征在于,所述无机封装材料为金属氧化物或金属硫化物或金属氮化物,金属氧化物为氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍或五氧化二锑中的一种或多种,金属硫化物为二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈或二硫化锆中的一种或多种,金属氮化物为氮化硅或氮化铝中的一种或两种。8. The packaging method of an optoelectronic device according to claim 3, wherein the inorganic packaging material is a metal oxide or a metal sulfide or a metal nitride, and the metal oxide is calcium oxide, tantalum pentoxide, titanium dioxide , zirconium dioxide, copper oxide, zinc oxide, aluminum oxide, chromium oxide, tin dioxide, nickel oxide or antimony pentoxide, and the metal sulfides are titanium disulfide and iron sulfide One or more of chromium trisulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide, cobalt trisulfide, antimony trisulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide , the metal nitride is one or both of silicon nitride or aluminum nitride.
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