CN113899802A - Reading circuit of field effect sensor, reading method of reading circuit and control circuit of field effect sensor - Google Patents
Reading circuit of field effect sensor, reading method of reading circuit and control circuit of field effect sensor Download PDFInfo
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Abstract
The invention discloses a reading circuit of a field effect sensor, a reading method and a control circuit thereof, relating to the field of semiconductor microelectronics, wherein the reading circuit of the field effect sensor comprises: a field effect sensor having a gate, a source electrically connected to the first current input terminal, and a drain electrically connected to the second current input terminal; the reading module is connected between the source electrode and the drain electrode in parallel and is electrically connected with the voltage signal output end; the current regulation device comprises a first current regulation module and/or a second current regulation module, wherein the first current regulation module is connected between a source electrode and a first current input end in series, and the second current regulation module is connected between a drain electrode and a second current input end in series. The invention effectively solves the problems that the reading circuit in the prior art can only be suitable for a single field effect sensor and the measurement accuracy is not high.
Description
Technical Field
The invention relates to the field of semiconductor microelectronics, in particular to a reading circuit of a field effect sensor, a reading method of the reading circuit and a control circuit of the reading circuit.
Background
The field effect type sensor is a device which is in specific contact with a substance to be detected through a grid on the surface of the sensor, so that the potential of the grid is changed, and the resistance of a channel below the grid is modulated to realize a sensing function. Compared with other sensors, the sensor has the advantages of miniaturization and high detection speed. The most widely used field effect sensor is a silicon-based ISFET (ion sensitive field effect transistor).
In the conventional ISFET reading circuit, a current source and a resistor are generally adopted to form a stable potential difference, and then a unit gain amplifier is utilized to send potentials at two ends of the resistor to two ends of a source electrode and a drain electrode of the ISFET, so that the voltage of the source electrode and the drain electrode of the ISFET is kept constant, namely the two ends of the ISFET are clamped, and finally a signal voltage is obtained.
However, in the conventional ISFET sensing circuit, the current source is a fixed current, so that the range of the ISFET applicable to the sensing circuit is limited, and due to the fact that the ISFET devices are different individually, different results can be generated when solutions with equal concentration and the same quantity are tested in a multi-channel mode, and the accuracy of the measurement result is affected.
Disclosure of Invention
In view of this, the present invention provides a readout circuit of a field effect sensor, a readout method thereof, and a control circuit thereof, so as to solve the problems that the readout circuit in the prior art is only applicable to a single field effect sensor and has low measurement accuracy.
The present invention provides a readout circuit of a field effect sensor, including: a field effect sensor having a gate, a source electrically connected to the first current input terminal, and a drain electrically connected to the second current input terminal; the reading module is connected between the source electrode and the drain electrode in parallel and is electrically connected with the voltage signal output end; the current regulation device comprises a first current regulation module and/or a second current regulation module, wherein the first current regulation module is connected between a source electrode and a first current input end in series, and the second current regulation module is connected between a drain electrode and a second current input end in series.
Based on the same idea, the invention also provides a reading method of the reading circuit of the field effect sensor, and the reading method is applied to the reading circuit of the field effect sensor; the reading method comprises the following steps: adjusting by the first current adjusting module and/or the second current adjusting module so that the current between the source and the drain of the field effect sensor is equal to the drain-source current of the field effect sensor during measurement; and generating a sensing signal according to the voltage change values of the source electrode and the drain electrode of the field effect sensor.
Based on the same idea, the invention also provides a control circuit, comprising: the field effect sensor reading circuit comprises a selection circuit and a plurality of field effect sensor reading circuits electrically connected with the selection circuit, wherein the field effect sensor reading circuits are the field effect sensor reading circuits; the selection circuit is used for gating signals at voltage signal output ends in the readout circuits of the field effect sensors.
Compared with the prior art, the reading circuit of the field effect sensor, the reading method thereof and the control circuit provided by the invention at least realize the following beneficial effects:
the reading circuit of the field effect sensor comprises a first current regulating module and/or a second current regulating module, wherein the first current regulating module is connected between the source electrode and the first current input end in series, the second current regulating module is connected between the drain electrode and the second current input end in series, and the current between the source electrode and the drain electrode of the field effect sensor is equal to the drain-source current of the field effect sensor during measurement through regulation of the first current regulating module and/or the second current regulating module, so that the measurement accuracy of the field effect sensor is improved. And no matter what kind of field effect sensor is adopted in the field effect sensor in the reading circuit of the field effect sensor, the current between the source electrode and the drain electrode of the field effect sensor can be equal to the drain-source current of the field effect sensor during measurement through the regulation of the first current regulation module and/or the second current regulation module.
Of course, it is not necessary for any product in which the present invention is practiced to specifically achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic diagram of a frame structure of a readout circuit of a field effect sensor provided by the present invention;
FIG. 2 is a schematic diagram of a frame structure of a readout circuit of another field effect sensor provided by the present invention;
FIG. 3 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention;
FIG. 4 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention;
FIG. 5 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention;
FIG. 6 is a circuit schematic of a sensing circuit of yet another field effect sensor provided by the present invention;
FIG. 7 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention;
FIG. 8 is a circuit schematic of a sensing circuit of yet another field effect sensor provided by the present invention;
FIG. 9 is a circuit schematic of a sensing circuit of yet another field effect sensor provided by the present invention;
FIG. 10 is a schematic flow chart of a method of reading a read circuit of a field effect sensor provided by the present invention;
FIG. 11 is a schematic flow chart of another method of reading a read circuit of a field effect sensor provided by the present invention;
fig. 12 is a schematic diagram of a frame structure of a control circuit according to the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Fig. 1 is a schematic diagram of a frame structure of a readout circuit of a field effect sensor provided in the present invention, and referring to fig. 1, the present embodiment provides a readout circuit of a field effect sensor, including: a field effect sensor 10 and a readout module 20.
The field effect sensor 10 has a gate 11, a source 12 and a drain 13, the source 12 being electrically connected to a first current input 51, and the drain 13 being electrically connected to a second current input 52. The readout module 20 is connected in parallel between the source 12 and the drain 13 and is electrically connected to the voltage signal output Vo.
In the reading circuit of the field effect sensor, the grid 11 of the field effect sensor 10 is used for being specifically contacted with a detected solution, when the current between the source 12 and the drain 13 of the field effect sensor 10 is constant current, the potential of the grid 11 changes along with the change of the ion concentration in the detected solution, further the channel resistance below the grid 11 changes along with the change of the ion concentration, correspondingly, the voltage of the source 12 and the drain 13 of the field effect sensor 10 changes along with the change of the voltage, and therefore the ion concentration in the detected solution can be determined according to a sensing signal generated by the voltage change value of the source 12 and the drain 13 of the field effect sensor 10. Specifically, the voltage signal of the source 12 or the drain 13 of the field effect sensor 10 is transmitted to the voltage signal output Vo through the readout module 20, the voltage of the source 12 or the drain 13 of the field effect sensor 10 can be measured through the voltage signal output Vo, and the concentration of ions in the detected solution can be determined according to the voltage signal output by the voltage signal output Vo.
In order to improve the measurement accuracy of the field effect sensor 10, the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement needs to match the drain-source current of the field effect sensor 10, i.e. the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement needs to be equal to the drain-source current of the field effect sensor 10. Referring to fig. 1, the readout circuit of the field effect sensor includes a first current adjusting module 30, the first current adjusting module 30 is connected in series between the source 12 and the first current input end 51, and the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement can be equal to the drain-source current Ids of the field effect sensor 10 through adjustment of the first current adjusting module 30, so as to facilitate improvement of the measurement accuracy of the field effect sensor 10.
Fig. 2 is a schematic diagram of a frame structure of a readout circuit of another field effect sensor provided by the present invention, and referring to fig. 2, optionally, the readout circuit of the field effect sensor includes a second current regulation module 40, the second current regulation module 40 is connected in series between the drain 13 and the second current input terminal 52, and the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement can be made equal to the drain-source current Ids of the field effect sensor 10 through regulation by the second current regulation module 40, thereby facilitating to improve the measurement accuracy of the field effect sensor 10.
Fig. 3 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention, and referring to fig. 3, optionally, the readout circuit of the field effect sensor includes a first current regulation module 30 and a second current regulation module 40, the first current regulation module 30 is connected in series between the source 12 and the first current input end 51, the second current regulation module 40 is connected in series between the drain 13 and the second current input end 52, and the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement can be made equal to the drain-source current Ids of the field effect sensor 10 through regulation by the first current regulation module 30 and the second current regulation module 40, so as to facilitate improvement of the measurement accuracy of the field effect sensor 10.
And no matter what kind of field effect sensor is adopted by the field effect sensor 10 in the readout circuit of the field effect sensor, the current between the source electrode 12 and the drain electrode 13 of the field effect sensor 10 during measurement can be equal to the drain-source current Ids of the field effect sensor 10 through the adjustment of the first current adjusting module 30 or/and the second current adjusting module 40, namely, the readout circuit of the field effect sensor provided by the invention is applicable to various field effect sensors and has a wide application range.
Fig. 4 is a schematic diagram of a frame structure of a readout circuit of a further field effect sensor provided by the present invention, and referring to fig. 4, in some alternative embodiments, the readout module 20 includes a first resistor R1, a first amplifier D1, and a second amplifier D2.
A first end of the first resistor R1 is electrically connected to the first node N1, and a second end of the first resistor R1 is electrically connected to the second node N2; the positive input end of the first amplifier D1 is electrically connected to the first node N1, and the negative input end and the output end of the first amplifier D1 are electrically connected to the source 12; the positive input end and the output end of the second amplifier D2 are electrically connected with the drain 13, and the negative input end and the output end of the second amplifier D2 are connected with a second node N2; the voltage signal output Vo is electrically connected to the second node N2.
In the readout circuit of the field effect sensor, the gate 11 of the field effect sensor 10 is used for being specifically contacted with the detected solution, when the current between two ends (the first node N1 and the second node N2) of the first resistor R1 is a constant current, a stable potential difference is formed between the first node N1 and the second node N2, the first amplifier D1 and the second amplifier D2 send the potential difference between the first node N1 and the second node N2 to the source 12 and the drain 13 of the field effect sensor 10, so that the voltage of the source 12 and the drain 13 of the field effect sensor 10 is kept stable, namely the source 12 and the drain 13 of the field effect sensor 10 are clamped, at the moment, the voltage of the second node N2 is measured through the voltage signal output terminal Vo, and the ion concentration in the detected solution can be determined according to the voltage output by the voltage signal output terminal Vo.
With continued reference to fig. 4, in some alternative embodiments, the sensing circuit of the field effect sensor includes a first current regulation module 30 and a second current regulation module 40, the first current regulation module 30 being connected in series between the first node N1 and the first current input terminal 51, the second current regulation module 40 being connected in series between the drain 13 and the second current input terminal 52.
The first current regulation module 30 and the second current regulation module 40 can be used for regulating the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement, so that the adjustable range of the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement is effectively increased, and the range of the field effect sensor applicable to a reading circuit of the field effect sensor is further increased.
Fig. 5 is a schematic diagram of a frame structure of a readout circuit of a field effect sensor according to yet another embodiment of the present invention, and referring to fig. 5, in some alternative embodiments, the first current regulating module 30 includes a third amplifier D3, a second resistor R2, a third resistor R3, and a first capacitor C1.
The positive input end of the third amplifier D3 is electrically connected to the first current input end 51, and the negative input end and the output end of the third amplifier D3 are electrically connected to the first end of the second resistor R2; a second end of the second resistor R2 is electrically connected to a first node N1; a first end of the third resistor R3 is electrically connected to the first current input terminal 51, and a second end of the third resistor R3 is electrically connected to the first node N1; a first pole of the first capacitor C1 is electrically connected to the first current input 51, and a second pole of the first capacitor C1 is electrically connected to the first node N2. The third amplifier D3 is used for voltage following, the first capacitor C1 is used for filtering, and the third resistor R3 is used for providing a constant voltage to the second resistor R2 when the current at the first current input terminal 51 is constant. The second resistor R2 is a variable resistor, and adjusts the finally input current by adjusting the resistance value of the second resistor R2, thereby adjusting the current between the source 12 and the drain 13 of the field effect sensor 10, thereby achieving adjustment by the first current adjustment module 30 such that the current between the source 12 and the drain 13 of the field effect sensor 10 at the time of measurement is equal to the drain-source current Ids of the field effect sensor 10.
Fig. 6 is a circuit schematic diagram of a readout circuit of a further field effect sensor provided by the present invention, and referring to fig. 6, in some alternative embodiments, the second current regulating module 40 includes a fourth amplifier D4, a fourth resistor R4, a fifth resistor R5 and a second capacitor C2.
The positive input end of the fourth amplifier D4 is electrically connected to the second current input end 52, and the negative input end and the output end of the fourth amplifier D4 are electrically connected to the first end of the fourth resistor R4; a second end of the fourth resistor R4 is electrically connected to the drain 13; a first end of the fifth resistor R5 is electrically connected to the second current input terminal 52, and a second end of the fifth resistor R5 is electrically connected to the drain 13; a first pole of the second capacitor C2 is electrically connected to the second current input 52 and a second pole of the second capacitor C2 is electrically connected to the drain 13. The fourth amplifier D4 is used for voltage following, the second capacitor C2 is used for filtering, and the fifth resistor R5 is used for providing a constant voltage to the fourth resistor R4 when the current at the second current input terminal 52 is constant. The fourth resistor R4 is a variable resistor, and adjusts the finally input current by adjusting the resistance value of the fourth resistor R4, thereby adjusting the current between the source 12 and the drain 13 of the field effect sensor 10, thereby achieving adjustment by the second current adjustment module 40 such that the current between the source 12 and the drain 13 of the field effect sensor 10 at the time of measurement is equal to the drain-source current Ids of the field effect sensor 10.
Fig. 7 is a schematic diagram of a frame structure of a readout circuit of another field effect sensor provided by the present invention, referring to fig. 7, in some optional embodiments, the readout circuit of the field effect sensor further includes a signal amplification module 60, the signal amplification module 60 is electrically connected between the readout module 20 and the voltage signal output terminal Vo, a voltage signal of the source 12 or the drain 13 of the field effect sensor 10 is transmitted to the signal amplification module 60 through the readout module 20, and a voltage signal of the source 12 or the drain 13 of the field effect sensor 10 is amplified by the amplification module 60 and then transmitted to the voltage signal output terminal Vo, which is favorable for reading the voltage signal of the source 12 or the drain 13 of the field effect sensor 10.
It should be noted that fig. 7 exemplarily shows that the voltage signal of the drain 13 of the field effect sensor 10 is amplified by the amplifying module 60 and then transmitted to the voltage signal output Vo, and the voltage signal of the drain 13 of the field effect sensor 10 is read through the voltage signal output Vo. In other embodiments of the present invention, the voltage signal of the source 12 of the field effect sensor 10 may also be amplified by the amplifying module 60 and transmitted to the voltage signal output terminal Vo, and the voltage signal of the source 12 of the field effect sensor 10 is read through the voltage signal output terminal Vo, which is not described herein again.
Fig. 8 is a circuit schematic diagram of a readout circuit of a further field effect sensor provided by the present invention, and referring to fig. 8, in some alternative embodiments, the signal amplification module 60 includes a fifth amplifier D5, a positive input terminal of the fifth amplifier D5 is electrically connected to the readout module 20, a negative input terminal and an output terminal of the fifth amplifier D5 are electrically connected to the voltage signal output terminal Vo, and amplification of the voltage signal of the source 12 or the drain 13 of the field effect sensor 10 transmitted through the readout module 20 is achieved by the fifth amplifier D5.
Fig. 9 is a circuit schematic diagram of a sensing circuit of a further field effect sensor provided by the present invention, and referring to fig. 9, in some alternative embodiments, the first resistor R1 is a variable resistor. After the adjustment by the first current adjusting module 30 and/or the second current adjusting module 40 makes the current between the source 12 and the drain 13 of the field effect sensor 10 equal to the drain-source current Ids of the field effect sensor 10 at the time of measurement, the measurement accuracy of the field effect sensor 10 is further improved by adjusting the resistance value of the first resistor R1 so that the voltage between the source 12 and the drain 13 of the field effect sensor 10 is equal to the drain-source voltage Vds of the field effect sensor 10.
Fig. 10 is a schematic view of a work flow of a reading method of a reading circuit of a field effect sensor provided by the present invention, and referring to fig. 3 and 10, the present embodiment provides a reading method of a reading circuit of a field effect sensor, which is applied to the reading circuit of a field effect sensor provided by the above embodiment; the reading method comprises the following steps:
step S1, adjusting through the first current adjusting module and the second current adjusting module to enable the current between the source and the drain of the field effect sensor to be equal to the drain-source current of the field effect sensor during measurement;
and step S2, generating a sensing signal according to the voltage change values of the source electrode and the drain electrode of the field effect sensor.
Specifically, in the readout circuit of the field effect sensor, the gate 11 of the field effect sensor 10 is used for being in specific contact with the solution to be detected, when the current between the source 12 and the drain 13 of the field effect sensor 10 is a constant current, the potential of the gate 11 changes with the change of the ion concentration in the solution to be detected, and further the channel resistance below the gate 11 changes, and accordingly, the voltages of the source 12 and the drain 13 of the field effect sensor 10 change, so that the ion concentration in the solution to be detected can be determined according to the sensing signal generated by the voltage change values of the source 12 and the drain 13 of the field effect sensor 10. Specifically, the voltage signal of the source 12 or the drain 13 of the field effect sensor 10 is transmitted to the voltage signal output Vo through the readout module 20, the voltage of the source 12 or the drain 13 of the field effect sensor 10 can be measured through the voltage signal output Vo, and the concentration of ions in the detected solution can be determined according to the voltage signal output by the voltage signal output Vo.
In order to improve the measurement accuracy of the field effect sensor 10, the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement needs to match the drain-source current of the field effect sensor 10, that is, the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement needs to be equal to the drain-source current of the field effect sensor 10, so that the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement is equal to the drain-source current Ids of the field effect sensor 10 through the adjustment of the first current adjusting module 30 and the second current adjusting module 40 before the ion concentration in the detected solution is measured, thereby being beneficial to improving the measurement accuracy of the field effect sensor 10.
And no matter what kind of field effect sensor is adopted by the field effect sensor 10 in the readout circuit of the field effect sensor, the current between the source electrode 12 and the drain electrode 13 of the field effect sensor 10 during measurement can be made to be equal to the drain-source current Ids of the field effect sensor 10 through the adjustment of the first current adjusting module 30 and the second current adjusting module 40, namely, the readout circuit of the field effect sensor provided by the invention is applicable to various field effect sensors and has wide application range.
It should be noted that, when the readout circuit of the field effect sensor exemplarily shown in this embodiment includes the first current regulation module 30 and the second current regulation module 40, the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement may be equal to the drain-source current Ids of the field effect sensor 10 through the regulation of the first current regulation module 30 and the second current regulation module 40, in other embodiments of the present invention, the readout circuit of the field effect sensor may further include only the first current regulation module 30 or only the second current regulation module 40, at this time, the current between the source 12 and the drain 13 of the field effect sensor 10 during measurement may be equal to the drain-source current Ids of the field effect sensor 10 through the regulation of the first current regulation module 30 or the second current regulation module 40, which is not repeated herein.
Fig. 11 is another operation flow diagram of the readout method of the readout circuit of the field effect sensor provided by the present invention, and referring to fig. 9 and 11, in some alternative embodiments, the readout module 20 includes a first resistor R1, a first amplifier D1, and a second amplifier D2.
A first end of the first resistor R1 is electrically connected to the first node N1, and a second end of the first resistor R1 is electrically connected to the second node N2; the positive input end of the first amplifier D1 is electrically connected to the first node N1, and the negative input end and the output end of the first amplifier D1 are electrically connected to the source 12; the positive input end and the output end of the second amplifier D2 are electrically connected with the drain 13, and the negative input end and the output end of the second amplifier D2 are connected with a second node N2; the voltage signal output Vo is electrically connected to the second node N2; the first resistor R1 is a variable resistor.
The reading method comprises the following steps:
step S1, adjusting through the first current adjusting module and the second current adjusting module to enable the current between the source and the drain of the field effect sensor to be equal to the drain-source current of the field effect sensor during measurement;
step S11, adjusting the resistance value of the first resistor to make the voltage between the source and the drain equal to the drain-source voltage of the field effect sensor;
and step S2, generating a sensing signal according to the voltage change values of the source electrode and the drain electrode of the field effect sensor.
Specifically, in the readout circuit of the field effect sensor, when the gate 11 of the field effect sensor 10 is used for being in specific contact with the solution to be detected, the current between the two ends (the first node N1 and the second node N2) of the first resistor R1 is a constant current, a stable potential difference is formed between the first node N1 and the second node N2, the first amplifier D1 and the second amplifier D2 send the potential difference between the first node N1 and the second node N2 to the source 12 and the drain 13 of the field effect sensor 10, so that the voltage of the source 12 and the drain 13 of the field effect sensor 10 is kept stable, that is, the source 12 and the drain 13 of the field effect sensor 10 are clamped, at this time, the voltage of the second node N2 is measured through the voltage signal output port Vo, and the concentration of ions in the solution to be detected can be determined according to the voltage output from the voltage signal output port Vo.
After the current between the source electrode 12 and the drain electrode 13 of the field effect sensor 10 is equal to the drain-source current Ids of the field effect sensor 10 during measurement through adjustment of the first current adjusting module 30 and the second current adjusting module 40, the measurement accuracy of the field effect sensor 10 is further improved by adjusting the resistance value of the first resistor R1 so that the voltage between the source electrode 12 and the drain electrode 13 of the field effect sensor 10 is equal to the drain-source voltage Vds of the field effect sensor 10, and then measuring the ion concentration in the detected solution.
Fig. 12 is a schematic diagram of a frame structure of a control circuit provided in the present invention, and referring to fig. 3 and 12, the present embodiment provides a control circuit, including: the field effect sensor comprises a selection circuit 100 and a plurality of field effect sensor reading circuits 200 electrically connected with the selection circuit 100, wherein the field effect sensor reading circuits 200 are provided by the field effect sensor reading circuits provided by the embodiment of the invention.
The reading circuit 200 of the field effect sensor is used for measuring the ion concentration in the detected solution, the voltage signal output by the voltage signal output end Vo in the reading circuit 200 of the field effect sensor is used for determining the ion concentration in the detected solution, and the selection circuit 100 is used for gating the signal of the voltage signal output end Vo in the reading circuit 200 of each field effect sensor (the reading circuit of the 1 st ISEFT-the reading circuit of the n th ISEFT), so that the gating processing of the signal of each voltage signal output end Vo is facilitated, and the multichannel test is realized.
It should be noted that the selection circuit 100 may be a single-pole multi-throw switch or a multiplexer, so as to gate the signal at the voltage signal output Vo in the readout circuit 200 of each field effect sensor.
With continued reference to fig. 3 and 12, in some alternative embodiments, the specifications of the field effect sensors 10 in the readout circuits 200 of the respective field effect sensors in the control circuit may be the same or different, or the specifications of some of the field effect sensors 10 may be the same and the specifications of some of the field effect sensors 10 may be different, so as to meet various measurement requirements. It is understood that the specification of the field effect sensor 10 in the readout circuit 200 of each field effect sensor can be set according to actual measurement requirements, and the present invention is not described herein again.
With continued reference to fig. 3 and 12, in some alternative embodiments, the control circuit further includes a signal processing and acquisition circuit 300 and a master control circuit 400.
The signal processing and collecting circuit 300 is electrically connected to the selecting circuit 100, and the signal processing and collecting circuit 300 is configured to process a signal at the voltage signal output Vo of the readout circuit 200 of the field effect sensor gated by the selecting circuit 100 and output a processed signal.
The main control circuit 400 is electrically connected to the signal processing and collecting circuit 300, and the main control circuit 400 is configured to receive the processing signal transmitted by the signal processing and collecting circuit 300 and process the processing signal. The master control circuit 400 is also electrically connected to the sense circuits 200 of the respective field effect sensors, the master control circuit 400 being further configured to control the adjustment resistors in the sense circuits 200 of the respective field effect sensors to adjust the current between the source 12 and the drain 13 of the field effect sensor 10 such that the current between the source 12 and the drain 13 of the field effect sensor 10 is equal to the drain-source current Ids of the field effect sensor 10 at the time of measurement, and/or to adjust the voltage between the source 12 and the drain 13 of the field effect sensor 10 such that the voltage between the source 12 and the drain 13 of the field effect sensor 10 is equal to the drain-source voltage Vds of the field effect sensor 10 at the time of measurement.
According to the embodiment, the reading circuit of the field effect sensor, the reading method of the field effect sensor and the control circuit of the field effect sensor, provided by the invention, at least the following beneficial effects are realized:
the reading circuit of the field effect sensor comprises a first current regulating module and/or a second current regulating module, wherein the first current regulating module is connected between the source electrode and the first current input end in series, the second current regulating module is connected between the drain electrode and the second current input end in series, and the current between the source electrode and the drain electrode of the field effect sensor is equal to the drain-source current of the field effect sensor during measurement through regulation of the first current regulating module and/or the second current regulating module, so that the measurement accuracy of the field effect sensor is improved. And no matter what kind of field effect sensor is adopted in the field effect sensor in the reading circuit of the field effect sensor, the current between the source electrode and the drain electrode of the field effect sensor can be equal to the drain-source current of the field effect sensor during measurement through the regulation of the first current regulation module and/or the second current regulation module.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (13)
1. A readout circuit for a field effect sensor, comprising:
a field effect sensor having a gate, a source electrically connected to the first current input, and a drain electrically connected to the second current input;
the readout module is connected between the source electrode and the drain electrode in parallel and is electrically connected with a voltage signal output end;
the current regulation circuit comprises a first current regulation module and/or a second current regulation module, wherein the first current regulation module is connected between the source electrode and the first current input end in series, and the second current regulation module is connected between the drain electrode and the second current input end in series.
2. The readout circuit of a field effect sensor according to claim 1,
the readout module comprises a first resistor, a first amplifier and a second amplifier;
a first end of the first resistor is electrically connected with a first node, and a second end of the first resistor is electrically connected with a second node;
a positive input end of the first amplifier is electrically connected with the first node, and a negative input end and an output end of the first amplifier are electrically connected with the source electrode;
the positive input end and the output end of the second amplifier are connected with the second node;
the voltage signal output end is electrically connected with the second node.
3. The readout circuit of a field effect sensor according to claim 2,
the readout circuit of the field effect sensor comprises the first current regulation module and the second current regulation module, and the first current regulation module is connected in series between the first node and the first current input end.
4. The readout circuit of a field effect sensor according to claim 3,
the first current regulating module comprises a third amplifier, a second resistor, a third resistor and a first capacitor;
a positive input end of the third amplifier is electrically connected with the first current input end, and a negative input end and an output end of the third amplifier are electrically connected with a first end of the second resistor;
a second end of the second resistor is electrically connected with the first node;
a first end of the third resistor is electrically connected with the first current input end, and a second end of the third resistor is electrically connected with the first node;
a first pole of the first capacitor is electrically connected with the first current input end, and a second pole of the first capacitor is electrically connected with the first node;
the second resistor is a variable resistor.
5. The readout circuit of a field effect sensor according to claim 3,
the second current regulating module comprises a fourth amplifier, a fourth resistor, a fifth resistor and a second capacitor;
a positive input end of the fourth amplifier is electrically connected with the second current input end, and a negative input end and an output end of the fourth amplifier are electrically connected with a first end of the fourth resistor;
a second end of the fourth resistor is electrically connected with the drain electrode;
a first end of the fifth resistor is electrically connected with the second current input end, and a second end of the fifth resistor is electrically connected with the drain electrode;
a first pole of the second capacitor is electrically connected with the second current input end, and a second pole of the second capacitor is electrically connected with the drain electrode;
the fourth resistor is a variable resistor.
6. The readout circuit of a field effect sensor according to claim 2,
the first resistor is a variable resistor.
7. The readout circuit of a field effect sensor according to claim 1, further comprising a signal amplification module electrically connected between the readout module and the voltage signal output terminal.
8. The readout circuit of a field effect sensor according to claim 7,
the signal amplification module comprises a fifth amplifier, a positive input end of the fifth amplifier is electrically connected with the readout module, and a negative input end and an output end of the fifth amplifier are electrically connected with the voltage signal output end.
9. A method of reading out a read-out circuit of a field effect sensor, characterized in that the method of reading out is applied to a read-out circuit of a field effect sensor according to any one of claims 1 to 8;
the readout method includes:
adjusting, by the first current adjusting module and/or the second current adjusting module, so that a current between the source and the drain of the field effect sensor at the time of measurement is equal to a drain-source current of the field effect sensor;
and generating a sensing signal according to the voltage change values of the source electrode and the drain electrode of the field effect sensor.
10. The method of reading out a readout circuit of a field effect sensor according to claim 9,
the readout module comprises a first resistor, a first amplifier and a second amplifier;
a first end of the first resistor is electrically connected with a first node, and a second end of the first resistor is electrically connected with a second node;
a positive input end of the first amplifier is electrically connected with the first node, and a negative input end and an output end of the first amplifier are electrically connected with the source electrode;
the positive input end and the output end of the second amplifier are connected with the second node;
the voltage signal output end is electrically connected with the second node;
the first resistor is a variable resistor;
after adjusting by the first current adjustment module and/or the second current adjustment module such that the current between the source and the drain of the field effect sensor at the time of measurement is equal to the drain-source current of the field effect sensor;
and adjusting the resistance value of the first resistor to enable the voltage between the source electrode and the drain electrode to be equal to the drain-source voltage of the field effect sensor.
11. A control circuit, comprising: a selection circuit, a readout circuit of a plurality of field effect sensors electrically connected to the selection circuit, wherein the readout circuit of the field effect sensors is the readout circuit of the field effect sensors according to any one of claims 1 to 8;
the selection circuit is used for gating signals of voltage signal output ends in the readout circuits of the field effect sensors.
12. The control circuit of claim 11, further comprising a signal processing and acquisition circuit and a master control circuit;
the signal processing and collecting circuit is electrically connected with the selection circuit and is used for processing the signal of the voltage signal output end in the reading circuit of the field effect sensor after being gated by the selection circuit and outputting a processed signal;
the main control circuit is electrically connected with the signal processing and collecting circuit and the reading circuits of the field effect sensors, is used for controlling the adjusting resistors in the reading circuits of the field effect sensors, and is also used for receiving the processing signals and processing the processing signals.
13. The control circuit of claim 11,
the field effect sensors in the readout circuits of the respective field effect sensors have the same or at least partially different specifications.
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