CN113890643A - Broadband adjustable standard component for passive intermodulation measurement and adjusting method - Google Patents

Broadband adjustable standard component for passive intermodulation measurement and adjusting method Download PDF

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CN113890643A
CN113890643A CN202111050022.5A CN202111050022A CN113890643A CN 113890643 A CN113890643 A CN 113890643A CN 202111050022 A CN202111050022 A CN 202111050022A CN 113890643 A CN113890643 A CN 113890643A
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intermodulation
resistor
adjustable
capacitor
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CN113890643B (en
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韩伟
俞国权
张需溥
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Hangzhou Jointcom Communication Technology Co ltd
Hangzhou Ziguang Communication Technology Co ltd
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    • H04B17/00Monitoring; Testing
    • H04B17/30Monitoring; Testing of propagation channels

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Abstract

The invention discloses a broadband adjustable standard component for passive intermodulation measurement and an adjusting method thereof. The method comprises the following steps: the coupler samples the CW carrier power and transmits the CW carrier power to an adjustable intermodulation generation source; adjusting the coupling degree of the coupler, and changing the power of the carrier wave entering the adjustable intermodulation generation source; changing a bias voltage applied to the diode by a control circuit; the adjustable intermodulation generation source realizes the change of the third-order intermodulation value IM3 according to the change of the bias voltage. According to the technical scheme, the Schottky diode is used as an adjustable intermodulation generation source, intermodulation is distributed along a symmetrical intermodulation path by adjusting the intermodulation performance of the diode through the bias voltage, a pair of adjustable CW signals are simultaneously introduced into a passive intermodulation test loop to serve as an intermodulation measurement reference, the IM3 current and the bias voltage are in an exponential relation, and the bias voltage is applied to the diode so as to enlarge the adjustable interval of the IM 3.

Description

Broadband adjustable standard component for passive intermodulation measurement and adjusting method
Technical Field
The invention relates to the technical field of passive intermodulation testing, in particular to a broadband adjustable standard component for passive intermodulation measurement and an adjusting method.
Background
Passive Intermodulation (PIM) is one of the most problematic problems in modern high power multi-channel communication systems. High-precision PIM measurement plays an important role in PIM-related research. As a key for ensuring the accuracy of PIM detection, the standardized PIM reference source has important significance. Currently available commercial PIM reference sources are typically a port device that can only generate a constant reflection PIM reference. Thus, two deficiencies prevent widespread adoption of such references in high-precision PIM measurements. On one hand, the fixed PIM reference value frequency point is relatively fixed and has a narrow range, and on the other hand, the fixed PIM reference value cannot strictly ensure the test reliability of the whole PIM test interval, especially when the difference between the measured PIM value and the nominal value of the PIM reference value is large. Therefore, a broadband adjustable PIM reference solution is desired.
Chinese patent document CN104506258A discloses a "passive intermodulation test method of pulse system". Two synchronous and adjustable pulse sources are used as signal sources, two pulse signals enter a power amplification module, and the pulse signals are amplified to +43dBm (calculated by a port of a tested piece). The two paths of amplified pulse signals form a double-tone pulse through the combiner, and the pulse is loaded to a tested piece to stimulate the tested signal to generate PIM (passive intermodulation) interference. The reflected PIM signal is isolated from the diphone signal by a duplexer inside the instrument. The fixed PIM reference value of the technical scheme can not ensure the test reliability of the whole PIM test interval.
Disclosure of Invention
The invention mainly solves the technical problem that the PIM reference value is fixed and the test reliability of the whole PIM test interval cannot be ensured in the original technical scheme, and provides a broadband adjustable standard component and an adjusting method for passive intermodulation measurement.A Schottky diode is used as an adjustable intermodulation generation source, intermodulation performance of the diode is adjusted by using bias voltage, intermodulation is distributed along a symmetrical intermodulation path, a pair of adjustable CW signals are simultaneously introduced into a passive intermodulation test loop to be used as an intermodulation measurement reference, IM3 current and the bias voltage are in an exponential relation, the bias voltage is applied on the diode to expand an IM3 adjustable interval, upper computer software generates a record file by recording bias setting values corresponding to IM3 values under different frequencies and different powers, and the record file is directly and adjustably called according to the needed IM3 value, so that the standard component is convenient to adjust.
The technical problem of the invention is mainly solved by the following technical scheme:
a wideband tunable etalon for passive intermodulation measurements comprising:
the control circuit is used for adjusting the bias voltage of the adjustable intermodulation generation source and is connected with the adjustable intermodulation generation source; the coupler is used for adjusting the coupling degree, sampling the CW carrier power and connecting with an adjustable intermodulation generation source; and the adjustable intermodulation generation source receives the sampling power of the coupler and realizes the change of the third-order intermodulation IM3 by adjusting the coupling degree of the coupler and changing the bias voltage.
Preferably, the control circuit comprises a communication circuit, an MCU, a DA conversion circuit and an amplifying circuit which are connected in sequence, the communication circuit is connected with an upper computer, the amplifying circuit is connected with the adjustable intermodulation generation source, and the control circuit further comprises a power supply voltage conversion circuit which is respectively connected with the communication circuit, the MCU, the DA conversion circuit and the amplifying circuit.
Preferably, the model of the MCU chip is STM32F100C8T6TR, pin 1 of the MCU is connected to the positive electrode of the power supply and is grounded via a capacitor C11, pin 7 is connected to the positive electrode of the power supply via a resistor R16 and is grounded via a capacitor C13, pin 8 is grounded, pin 9 is connected to the positive electrode of the power supply and is grounded via a capacitor C12, pin 20 is grounded via a resistor R12, pin 23 is grounded, pin 24 is connected to the positive electrode of the power supply and is grounded via a capacitor C7, pin 25 is connected to the positive electrode of the power supply via a resistor R80, pin 30 is connected to the TXD1 interface, pin 31 is connected to the RXD1 interface, pin 32 is grounded via a resistor R3, pin 35 is grounded and is connected to the positive electrode of the power supply via a capacitor C3, pin 36 is connected to the power supply, pin 42 is connected to SCL1, pin 43 is connected to the SDA1 interface, pin 44 is grounded via a resistor R13, pin 47 is grounded, and is connected to the positive electrode 11.
Preferably, the DA conversion circuit includes a chip U1 with a chip model number of AD5324, pin 1 of the chip U1 is grounded via a capacitor, pin 1 is connected to DAC5V and to the positive electrode of a power supply via an inductor L1, pin 3 is connected to the setup interface, pin 5 is connected to DAC5V and to the ground via a capacitor C5, pin 7 is grounded, pin 8 is connected to the DATA interface via a resistor R7, pin 9 is connected to the CLK interface via a resistor R5, and pin 10 is connected to the DACLE interface via a resistor R4.
Preferably, the amplifying circuit comprises an operational amplifier U2A with the chip model number LM2904D, wherein the end 1 of the operational amplifier U2A is connected with the SET interface, the end 2 is grounded through a resistor R2 and is connected with the end 1 through a resistor R1, the end 3 is connected with the end 1 through a resistor R9, the end 3 is grounded through a capacitor C4 and is connected with the SERRING interface through a resistor R6, the end 4 is grounded, and the end 8 is connected with the positive electrode and is grounded through a capacitor C1.
Preferably, the adjustable intermodulation generation source comprises a chip with the model number of HSMS2820 and a capacitor C15 connected with RFIN, the other end of the capacitor C15 is connected with the anode of a diode D2, and is connected with the SET interface through a resistor R27 and a resistor R32, and the cathode of the diode D2 is grounded through a resistor R31.
A method of tuning a broadband tunable standard for passive intermodulation measurement, comprising the steps of:
the S1 coupler samples the CW carrier power and transmits the CW carrier power to the adjustable intermodulation generation source;
s2, adjusting the coupling degree of the coupler, and changing the power of the carrier entering the adjustable intermodulation generation source;
s3 changing the bias voltage applied on the diode through the control circuit;
the S4 adjustable intermodulation generation source realizes the change of the third-order intermodulation value IM3 according to the change of the bias voltage.
Preferably, the step S3 specifically includes:
s3.1, the upper computer sends the third-order intermodulation value IM3 to the MCU through the communication module;
S3.2MCU converting the third-order intermodulation value into corresponding AD value and sending to DA conversion circuit;
s3.3, converting the digital signal into an analog voltage signal by the DA conversion circuit and amplifying the analog voltage signal by the amplifying circuit;
and S3.4, supplying the amplified voltage signal as a bias voltage to the adjustable intermodulation generation source.
Preferably, the step S4 specifically includes:
the tunable intermodulation generation source uses a Schottky diode, and by utilizing its nonlinearity, the nonlinear diode current is represented by Taylor series
Figure BDA0003252573130000041
In the formula ISIs diode saturation current, VbThe constant k is 1/VT, and VT is thermal voltage; defining the original excitation signal CW as
Vin(t)=a1cosω1t+a2cosω2t ②
Wherein, a1,a2For the amplitude of both excitations, ω1,ω2Is a carrier frequency point, and represents the distortion current of a third-order intermodulation value IM3, which is a high-order term in a formula (I) replaced by a formula (II), neglected
Figure BDA0003252573130000042
IM3 with incident Power a1、a2And a bias voltage VbVaries, the IM3 current is exponential with the bias voltage.
The invention has the beneficial effects that: a Schottky diode is used as an adjustable intermodulation generating source, intermodulation is distributed along a symmetrical intermodulation path by utilizing intermodulation performance of a bias voltage adjusting diode, a pair of adjustable CW signals are simultaneously introduced into a passive intermodulation test loop to be used as an intermodulation measurement reference, IM3 current and the bias voltage are in an exponential relation, the bias voltage is applied to the diode to expand an IM3 adjustable interval, upper computer software generates a recording file by recording bias voltage setting values corresponding to IM3 values under different frequencies and different powers, and the recording file is directly and adjustably called according to the needed IM3 value, so that the standard component is convenient to adjust.
Drawings
Fig. 1 is a schematic circuit diagram of the present invention.
Fig. 2 is a schematic diagram of the operation of a control circuit of the present invention.
Fig. 3 is a control circuit diagram of the present invention.
Fig. 4 is a circuit diagram of an MCU of the present invention.
Fig. 5 is a circuit diagram of a DA conversion circuit of the present invention.
Fig. 6 is a circuit diagram of an amplifying circuit of the present invention.
Fig. 7 is a circuit diagram of a tunable intermodulation generation source of the present invention.
Fig. 8 is a flow chart of an operation of the present invention.
In the figure, 1 coupler, 2 adjustable intermodulation generation source, 3 control circuit, 3.1 communication circuit, 3.2MCU, 3.3DA conversion circuit, 3.4 amplifying circuit and 3.5 power supply voltage conversion circuit.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example (b): the broadband adjustable standard component for passive intermodulation measurement in the present embodiment, as shown in fig. 1, includes a coupler 1, an adjustable intermodulation generation source 2, and a control circuit 3, which are connected in sequence, where the coupler 1 is used to adjust a coupling degree and sample a CW carrier power, the control circuit 3 is used to adjust a bias voltage of the adjustable intermodulation generation source 2, and the adjustable intermodulation generation source 2 receives the sampled power of the coupler 1 and changes a third-order intermodulation value IM3 by adjusting the coupling degree of the coupler 1 and changing the bias voltage.
As shown in fig. 2, the control circuit 3 includes a communication circuit 3.1, an MCU3.2, a DA conversion circuit 3.3, and an amplifier circuit 3.4, which are connected in sequence, the communication circuit 3.1 is connected to the upper computer, the amplifier circuit 3.4 is connected to the adjustable intermodulation generation source 2, and a power supply voltage conversion circuit connected to the communication circuit 3.1, the MCU3.2, the DA conversion circuit 3.3, and the amplifier circuit 3.4, respectively.
As shown in fig. 4, the model of the MCU3.2 chip is STM32F100C8T6TR, pin 1 of MCU3.2 is connected to the positive power supply and is grounded through a capacitor C11, pin 7 is connected to the positive power supply through a resistor R16 and is grounded through a capacitor C13, pin 8 is grounded, pin 9 is connected to the positive power supply and is grounded through a capacitor C12, pin 20 is grounded through a resistor R12, pin 23 is grounded, pin 24 is connected to the positive power supply and is grounded through a capacitor C7, pin 25 is connected to the positive power supply through a resistor R80, pin 30 is connected to the TXD1 interface, pin 31 is connected to the RXD1 interface, pin 32 is grounded through a resistor R3, SCL pin 35 is grounded and is connected to the positive power supply through a capacitor C3, pin 36 is connected to the positive power supply, pin 42 is connected to 1, pin 43 is connected to the SDA1 interface, pin 44 is grounded through a resistor R13 and is grounded through a capacitor C11.
As shown in fig. 5, the DA converter circuit 3.3 includes a chip U1 with a chip model number AD5324, a pin 1 of a chip U1 is grounded via a capacitor, the pin 1 is connected to DAC5V and to the positive electrode of the power supply via an inductor L1, the pin 3 is connected to the seting interface, the pin 5 is connected to DAC5V and to the ground via a capacitor C5, the pin 7 is grounded, the pin 8 is connected to the DATA interface via a resistor R7, the pin 9 is connected to the CLK interface via a resistor R5, and the pin 10 is connected to the DACLE interface via a resistor R4.
As shown in fig. 6, the amplifying circuit 3.4 includes an operational amplifier U2A with a chip model LM2904D, the terminal 1 of the operational amplifier U2A is connected to the SET interface, the terminal 2 is connected to the ground through a resistor R2 and the terminal 1 through a resistor R1, the terminal 3 is connected to the terminal 1 through a resistor R9, the terminal 3 is connected to the ground through a capacitor C4 and the SERRING interface through a resistor R6, the terminal 4 is connected to the ground, and the terminal 8 is connected to the positive electrode and the ground through a capacitor C1.
As shown in fig. 7, the tunable intermodulation generation source 2 includes a chip of HSMS2820 model, and further includes a capacitor C15 connected to RFIN, the other end of the capacitor C15 is connected to the anode of the diode D2, and is connected to the SET interface through the resistor R27 and the resistor R32, and the cathode of the diode D2 is grounded through the resistor R31.
As shown in FIG. 2, the communication circuit 3.1 has a chip model of CH340G, and the power supply voltage conversion circuit has a chip model of SPX3819M 5-3.3.
A method for adjusting a wideband tunable standard component for passive intermodulation measurement, as shown in fig. 8, comprises the steps of:
the coupler 1 of S1 samples the CW carrier power and transmits to the adjustable intermodulation generating source 2;
s2, adjusting the coupling degree of the coupler 1, and changing the carrier power entering the adjustable intermodulation generation source 2;
s3 changes the bias voltage applied to the diode through the control circuit 3, which specifically includes:
s3.1, the upper computer sends the third-order intermodulation value IM3 to the MCU3.2 through the communication module 3.1;
S3.2MCU3.2 converting the third-order intermodulation value into corresponding AD value and sending to DA conversion circuit 3.3;
s3.3, the DA conversion circuit 3.3 converts the digital signal into an analog voltage signal and amplifies the analog voltage signal through the amplifying circuit 3.4;
s3.4 supplies the amplified voltage signal as a bias voltage to the adjustable intermodulation generation source 2.
Under the bias voltage, the intermodulation generation source generates a third-order intermodulation value IM3 corresponding to the transmission of software when the carrier power is 2 multiplied by 43 dBm. Therefore, different third-order intermodulation values IM3 can be set through software, and different bias voltages can be obtained through the conversion circuit.
The S4 method for changing the third-order intermodulation IM3 by the adjustable intermodulation generation source 2 according to the change of the bias voltage specifically includes:
the tunable intermodulation generation source 2 uses a schottky diode, by which the non-linearity of the current of the non-linear diode is represented by taylor series
Figure BDA0003252573130000071
In the formula ISIs diode saturation current, VbThe constant k is 1/VT, and VT is thermal voltage;
defining the original excitation signal CW as
Vin(t)=a1cosω1t+a2cosω2t ②
Wherein, a1,a2For the amplitude of both excitations, ω1,ω2Is a carrier frequency point, and the formula (II) is substituted into the formula (I), the high-order terms in the formula (I) are omitted, and the third-order intermodulation value IM3 is obtainedDistortion current is shown as
Figure BDA0003252573130000081
IM3 with incident Power a1、a2And a bias voltage VbVaries, the IM3 current is exponential with the bias voltage. The adjustable dynamic range of the IM3 is relatively large and can reach about 30 dB.
When the carrier power of the standard component is 2 multiplied by 43dBm, the bias voltage applied to the diode can be adjusted by the control circuit within the frequency range of 710 to 2550MHz, and the intermodulation of the intermodulation generation source can be adjusted within-80 to-110 dBm.
The standard component communicates with a computer through a USB port, a bias voltage value is set through upper computer software, a third-order intermodulation value IM3 is obtained, and the bias voltage corresponding to the IM3 value is recorded. And the upper computer software generates a recording file by recording bias setting values corresponding to the IM3 values under different frequencies and different powers. When the standard component is used, the recording file can be directly called in an adjustable mode according to the needed IM3 value, and the standard component is convenient to adjust.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Although the terms control circuit, tunable intermodulation generation source, etc. are used more herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.

Claims (9)

1. A wideband tunable etalon for passive intermodulation measurement, comprising:
the control circuit (3) is used for adjusting the bias voltage of the adjustable intermodulation generating source (2) and is connected with the adjustable intermodulation generating source (2);
the coupler (1) is used for adjusting the coupling degree and sampling the power of the CW carrier and is connected with the adjustable intermodulation generation source (2);
and the adjustable intermodulation generation source (2) receives the sampling power of the coupler (1) and realizes the change of the third-order intermodulation IM3 by adjusting the coupling degree of the coupler (1) and changing the bias voltage.
2. A broadband tunable standard for passive intermodulation measurement according to claim 1, characterized in that the control circuit (3) comprises a communication circuit (3.1), an MCU (3.2), a DA conversion circuit (3.3) and an amplification circuit (3.4) connected in sequence, the communication circuit (3.1) is connected to a host computer, the amplification circuit (3.4) is connected to the tunable intermodulation generation source (2), and a supply voltage conversion circuit connected to the communication circuit (3.1), the MCU (3.2), the DA conversion circuit (3.3) and the amplification circuit (3.4), respectively.
3. The broadband tunable standard component for passive intermodulation measurement according to claim 2, wherein the MCU (3.2) chip model is STM32F100C8T6TR, pin 1 of the MCU (3.2) is connected to the positive power supply and grounded via a capacitor C11, pin 7 is connected to the positive power supply via a resistor R16 and grounded via a capacitor C13, pin 8 is grounded, pin 9 is connected to the positive power supply and grounded via a capacitor C12, pin 20 is grounded via a resistor R12, pin 23 is grounded, pin 24 is connected to the positive power supply and grounded via a capacitor C7, pin 25 is connected to the positive power supply via a resistor R80, pin 30 is connected to the TXD1 interface, pin 31 is connected to the RXD1 interface, pin 32 is grounded via a resistor R3, pin 35 is grounded and connected to the positive power supply via a capacitor C3, pin 36 is connected to the positive power supply, pin 42 is connected to the SCL1, and pin 43 is connected to the SDA1 interface, pin 44 is connected to ground through resistor R13, pin 47 is connected to ground, and pin 48 is connected to the positive supply and also to ground through capacitor C11.
4. The broadband tunable etalon for passive intermodulation measurement according to claim 2, wherein the DA conversion circuit (3.3) comprises a chip U1 with a chip model AD5324, pin 1 of the chip U1 is grounded via a capacitor, pin 1 is connected to DAC5V and to the positive electrode of the power supply via an inductor L1, pin 3 is connected to the seting interface, pin 5 is connected to DAC5V and to the ground via a capacitor C5, pin 7 is grounded, pin 8 is connected to the DATA interface via a resistor R7, pin 9 is connected to the CLK interface via a resistor R5, and pin 10 is connected to the DACLE interface via a resistor R4.
5. The broadband tunable standard component for passive intermodulation measurement according to claim 2, wherein the amplifying circuit (3.4) comprises an operational amplifier U2A of chip model LM2904D, wherein the 1 terminal of the operational amplifier U2A is connected to the SET interface, the 2 terminal is connected to the ground through a resistor R2 and to the 1 terminal through a resistor R1, the 3 terminal is connected to the 1 terminal through a resistor R9, the 3 terminal is connected to the ground through a capacitor C4 and to the SERRING interface through a resistor R6, the 4 terminal is connected to the ground, and the 8 terminal is connected to the positive electrode and to the ground through a capacitor C1.
6. The broadband tunable etalon for passive intermodulation measurement according to claim 1, wherein the tunable intermodulation generation source (2) comprises a chip of HSMS2820, and further comprises a capacitor C15 connected to RFIN, the other end of the capacitor C15 is connected to the positive electrode of a diode D2 and to the SET interface via a resistor R27 and a resistor R32, and the negative electrode of the diode D2 is connected to ground via a resistor R31.
7. A method of tuning a broadband tunable standard for passive intermodulation measurement, comprising the steps of:
the S1 coupler (1) samples the CW carrier power and transmits the CW carrier power to the adjustable intermodulation generation source (2);
s2, adjusting the coupling degree of the coupler (1) and changing the carrier power entering the adjustable intermodulation generation source (2);
s3, changing the bias voltage applied to the diode through the control circuit (3);
the S4 adjustable intermodulation generation source (2) realizes the change of the third-order intermodulation value IM3 according to the change of the bias voltage.
8. The method according to claim 7, wherein the step S3 specifically includes:
s3.1, the upper computer sends the third-order intermodulation value IM3 to the MCU (3.2) through the communication module (3.1);
s3.2, the MCU (3.2) converts the third-order intermodulation value into a corresponding AD value and sends the AD value to the DA conversion circuit (3.3); s3.3, converting the digital signal into an analog voltage signal by a DA conversion circuit (3.3) and amplifying the analog voltage signal by an amplifying circuit (3.4);
and S3.4, supplying the amplified voltage signal as a bias voltage to the adjustable intermodulation generation source (2).
9. The method according to claim 7, wherein the step S4 specifically includes:
the tunable intermodulation generation source (2) uses a Schottky diode, and by its nonlinearity, the nonlinear diode current is represented by a Taylor series
Figure FDA0003252573120000031
In the formula ISIs diode saturation current, VbThe constant k is 1/VT, and VT is thermal voltage;
defining the original excitation signal CW as
Vin(t)=a1cosω1t+a2cosω2t ②
Wherein, a1,a2For the amplitude of both excitations, ω1,ω2Is a carrier frequency point, and represents the distortion current of a third-order intermodulation value IM3, which is a high-order term in a formula (I) replaced by a formula (II), neglected
Figure FDA0003252573120000032
IM3 with incident Power a1、a2And a bias voltage VbVaries, the IM3 current is exponential with the bias voltage.
CN202111050022.5A 2021-09-08 2021-09-08 Broadband adjustable standard component for passive intermodulation measurement and adjustment method Active CN113890643B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764582A (en) * 2008-12-24 2010-06-30 三星电机株式会社 Systems and methods for self-mixing adaptive bias circuit for power amplifier
CN106788784A (en) * 2015-11-25 2017-05-31 西安交通大学 Dynamic passive intermodulation reference signal generator
CN109188328A (en) * 2018-08-07 2019-01-11 西安交通大学 A kind of adjustable intermodulation calibration source based on medium integrated waveguide
CN110247875A (en) * 2019-05-27 2019-09-17 天津大学 A kind of intermodulation amplitude modulation and phase modulation method for generation and circuit based on coherent nonlinear synthesis

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764582A (en) * 2008-12-24 2010-06-30 三星电机株式会社 Systems and methods for self-mixing adaptive bias circuit for power amplifier
CN106788784A (en) * 2015-11-25 2017-05-31 西安交通大学 Dynamic passive intermodulation reference signal generator
CN109188328A (en) * 2018-08-07 2019-01-11 西安交通大学 A kind of adjustable intermodulation calibration source based on medium integrated waveguide
CN110247875A (en) * 2019-05-27 2019-09-17 天津大学 A kind of intermodulation amplitude modulation and phase modulation method for generation and circuit based on coherent nonlinear synthesis

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