CN113862782A - Automatic liquid level compensation method - Google Patents
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- CN113862782A CN113862782A CN202111001722.5A CN202111001722A CN113862782A CN 113862782 A CN113862782 A CN 113862782A CN 202111001722 A CN202111001722 A CN 202111001722A CN 113862782 A CN113862782 A CN 113862782A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of monocrystalline silicon production, and relates to a liquid level automatic compensation method, which comprises the following steps: s1: silicon liquid is contained in the crucible, a water-cooling heat shield is arranged above the liquid level of the silicon liquid in the crucible, an imaging device is arranged above the water-cooling heat shield, and a lifting device is arranged below the crucible; s2: the imaging device emission light forms observation point one on the silicon liquid level through water cooling heat shield screen mouth, and observation point one forms observation line one on the silicon liquid level, and water cooling heat shield screen mouth forms the projection point under the projection of silicon liquid level mirror surface simultaneously, and the projection point forms observation line two on the silicon liquid level, the imaging device is apart from silicon liquid level distance for h, the imaging device is apart from water cooling heat shield screen mouth distance for d, satisfies: d11/h11 is d/(h + h11), d12/h11 is d/(h-h 11); s3: and solving the value of the liquid port distance h11 according to the formula in the step S2. S4: and (4) comparing the liquid port distance h11 solved in the step S3 with the preset optimal liquid level position, and performing lifting compensation through a lifting device according to a comparison result, so that the adjustment is accurate and the operation is simple.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon production, and relates to a liquid level automatic compensation method.
Background
In the process of producing monocrystalline silicon by using the monocrystalline furnace, the distance between the liquid ports refers to the distance between the liquid level of the raw material and the water screen port. The method is an important technical parameter in the production process of monocrystalline silicon, and the monocrystalline silicon is a basic raw material in photovoltaic power generation and semiconductor industries. Monocrystalline silicon is one of the most important monocrystalline materials in the world as a key supporting material of the modern information society, and not only is the main functional material for developing computers and integrated circuits, but also the main functional material for photovoltaic power generation and solar energy utilization.
In the prior art, the liquid gap control in the production process is to indirectly control the change of the liquid gap through the weight change of a monocrystalline silicon product, so that the defect of inaccurate control precision exists, and the crystal bar is broken in the production process and cannot form a whole crystal bar.
In summary, in order to overcome the defects in the prior art, a liquid level automatic compensation method with simple structure and accurate control needs to be designed.
Disclosure of Invention
The invention provides a liquid level automatic compensation method for solving the problems in the prior art.
The purpose of the invention can be realized by the following technical scheme: the automatic liquid level compensating method includes:
s1: silicon liquid is contained in the crucible, a water-cooling heat shield is arranged above the liquid level of the silicon liquid in the crucible, an imaging device is arranged above the water-cooling heat shield, and a lifting device is arranged below the crucible;
s2: imaging device transmission light forms observation point one through water-cooling heat shield screen mouth on silicon liquid level, and observation point one forms observation line one that length is d12 on silicon liquid level, and water-cooling heat shield screen mouth forms the projection point under silicon liquid level mirror surface projection simultaneously, and the projection point forms observation line two that length is d11 on silicon liquid level, imaging device is apart from silicon liquid level distance for h, imaging device is apart from water-cooling heat shield screen mouth distance and is d, satisfies the relation: d11/h11 is d/(h + h11), d12/h11 is d/(h-h 11);
s3: and (3) measuring the distance h between the imaging device and the liquid level of the silicon liquid, measuring the distance d between the imaging device and the water-cooling heat shield port, measuring the length d11+ d12 of an observation line on an imaging graph of the imaging device, and solving the value of the distance h11 between the liquid port and the water-cooling heat shield port according to the formula in the step S2.
S4: and (4) comparing the liquid gap h11 solved in the step S3 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible through a lifting device according to the comparison result.
In a further improvement, in the step S2, the light emitted by the imaging device is imaged by the water-cooled heat shield to form an imaging visible area, the center of the imaging visible area is an imaging center, the imaging visible area is crescent, and a third measurement point observation point is selected in the imaging visible area, which includes the following steps:
s5: the horizontal distance between the observation point III and the imaging center is L, the distance between the connection line of the observation point III and the imaging center in the imaging visible area is d21+ d22, the distance between the imaging device and the liquid level of the silicon liquid is h, the distance between the vertical point of the imaging device and the actual imaging center is h2, the distance between the imaging device and the actual imaging center is h3, and the radius of the actual imaging circle is h 4. Satisfies the relationship: h32＝h2+h22，(h4-d21-d22)/h3＝d21/h11，d22/h11＝h4/h3；
S6: measuring the distance h between the imaging device and the liquid level of the silicon liquid, measuring the distance h2 between the vertical point of the imaging device and the actual imaging center, measuring the distance h3 between the imaging device and the actual imaging center, measuring the radius h4 of the actual imaging circle, measuring the length d11+ d12 of an observation line on an imaging graph of the imaging device, and solving the value of the liquid port distance h11 through the formula in the step S5.
S7: and (4) comparing the liquid gap h11 solved in the step S6 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible through a lifting device according to the comparison result.
The improved crucible pot is characterized in that a crucible shaft is arranged at the lower end of the crucible pot, the lifting device comprises a lifting support, a guide rail sliding block assembly, a lifting lead screw and a driving mechanism, the lower end of the crucible shaft is arranged on the lifting support, the lifting support is arranged on the guide rail sliding block assembly, the lifting lead screw is arranged on the lifting support, and the driving mechanism is connected with the lifting lead screw.
In a further improvement, the driving mechanism is a lifting motor speed reducer component.
In a further improvement, the guide rail sliding block assemblies are provided with two groups.
Compared with the prior art, the liquid level automatic compensation method can accurately obtain the relation between the measured value and the liquid opening distance through imaging of the imaging device and calculation, can compensate the liquid level in real time, enables the liquid level to be always at the optimal position, enables the temperature field of the liquid level to be moderate, is beneficial to crystal growth, and improves the yield of crystal bars.
Drawings
FIG. 1 is a schematic structural diagram of the present invention
FIG. 2 is a schematic diagram of the geometrical relationship of FIG. 1
FIG. 3 is a schematic diagram of the structure of the actual imaging of the present invention
FIG. 4 is a schematic diagram of the geometrical relationship of FIG. 3
FIG. 5 is a schematic view of the lifting device of the present invention
In the figure, 1-crucible, 11-silicon liquid level, 12-crucible shaft, 2-water cooling heat shield, 3-imaging device, 31-imaging visible area, 4-crystal bar, 5-lifting device, 6-lifting motor reducer component, 7-lifting bracket, 8-guide rail slider component, 9-lifting screw rod, A1-observation point I, A2-projection point, B1-observation line I, B2-observation line II, C1 observation point III, D1-imaging center and D2-actual imaging center.
Detailed Description
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected unless otherwise explicitly stated or limited. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The technical solution of the present invention is further described below with reference to the following embodiments and accompanying drawings 1 to 5.
Example 1
A liquid level automatic compensation method comprises the following steps:
s1: silicon liquid is contained in a crucible 1, a water-cooling heat shield 2 is arranged above a silicon liquid level 11 of the crucible 1, an imaging device 3 is arranged above the water-cooling heat shield 2, and a lifting device 5 is arranged below the crucible 1;
s2: the imaging device 3 emits light which passes through the screen port of the water-cooling heat shield 2 to form an observation point A1 on the silicon liquid surface 11, the observation point A1 forms an observation line B1 with the length of d12 on the silicon liquid surface 11, meanwhile, the screen port of the water-cooling heat shield 2 forms a projection point A2 under the mirror projection of the silicon liquid surface 11, the projection point A2 forms an observation line B2 with the length of d11 on the silicon liquid surface 11, the distance from the imaging device 3 to the silicon liquid surface 11 is h, the distance from the imaging device 3 to the screen port of the water-cooling heat shield 2 is d, and the relationship is satisfied:
d11/h11＝d/(h+h11)，d12/h11＝d/(h-h11)；
therefore, the method comprises the following steps: d11 ═ d × h11/(h + h 11); d12 ═ d × h11/(h-h11)
Thereby deriving formula one: d11+ d12 ═ 2 × d × h 11/(h)2-h112)；
S3: and (3) measuring the distance h between the imaging device 3 and the liquid level 11 of the silicon liquid, measuring the distance d between the imaging device 3 and the screen opening of the water-cooling heat shield 2, measuring the length d11+ d12 of an observation line on an imaging graph of the imaging device 3, and calculating the value of the liquid outlet distance h11 according to the length d11+ d12 under the condition that d and h are fixed values according to a formula I in the step S2.
S4: and (4) comparing the liquid level distance h11 solved in the step S3 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible 1 through the lifting device 5 according to the comparison result.
Specifically, the height of the crucible 1 is changed through the lifting device 5, the distance h between the imaging device 3 and the liquid level 11 of the silicon liquid is further changed, the length d11+ d12 of an observation line is measured on an imaging graph at the moment, the liquid port distance h11 is measured according to a formula, and the measured length is compared with an initial liquid port distance value in an initial state, so that the liquid port distance h11 can be adjusted by controlling d11+ d12, the liquid level is always in the optimal position, and the automatic compensation of the liquid level is achieved.
The method and the device can obtain the relation between the measured value and the liquid opening distance through imaging by the imaging device and calculation, and can compensate the liquid level in real time to ensure that the liquid level is always at the optimal position.
Example 2
The screen opening of the water-cooling heat shield 2 is in a crescent shape when the imaging device 3 images, in the actual production process, raw materials are melted and then crystallized to form a crystal bar, and therefore the visible area imaged by the actual imaging device 3 is shown in fig. 3. In the actual imaging area, the measurement position of d11+ d12 cannot be directly selected for measurement due to the position of the crystal ingot 4, so in the actual use process, in the middle area of the imaging visible area 31, an observation point three C1 is taken, the horizontal distance between the observation point three C1 and the imaging center is L, and the horizontal distance between the observation point three C1 and the imaging center is connected to obtain the distance d21+ d22 required to be measured.
In the step S2, the light emitted by the imaging device 3 is imaged into the imaging visible area 31 through the water-cooled heat shield 2, the circle center of the imaging visible area 31 is an imaging center D1, the imaging visible area 31 is crescent, and a measurement point observation point three C1 is selected from the imaging visible area 31, which includes the following steps:
s5: the horizontal distance between the observation point three C1 and the imaging center D1 is L, the distance between the connection line of the observation point three C1 and the imaging center D1 in the imaging visible area 31 is D21+ D22, the distance between the imaging device 3 and the silicon liquid level 11 is h, the distance between the vertical point of the imaging device 3 and the actual imaging center D2 is h2, the distance between the imaging device 3 and the actual imaging center D2 is h3, the radius of the actual imaging circle is h4, and h4 is a fixed value. Satisfies the relationship: h32＝h2+h22，
(h4-d21-d22)/h3＝d21/h11，d22/h11＝h4/h3；
From this, the formula two can be obtained, d21+ d22 ═ h4 ═ h112+3*h4*h11*h3)/(h11*h3+2h32)
S6: measuring the distance h between the imaging device 3 and the silicon liquid level 11, measuring the distance h2 between the vertical point of the imaging device 3 and the actual imaging center D2, measuring the distance h3 between the imaging device 3 and the actual imaging center D2, measuring the actual imaging circle radius h4, measuring the length D11+ D12 of an observation line on an imaging graph of the imaging device 3, and calculating the value of the liquid outlet distance h11 according to the length D21+ D22 when h3 and h4 are fixed values according to the formula II in the step S5, so that the liquid outlet distance h11 can be adjusted by controlling D21+ D22, the liquid level is always in the optimal position, and the automatic compensation of the liquid level is realized.
S7: and (4) comparing the liquid level distance h11 solved in the step S6 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible 1 through the lifting device 5 according to the comparison result.
Specifically, the height of the crucible 1 is changed through the lifting device 5, the distance h between the imaging device 3 and the liquid level 11 of the silicon liquid is further changed, the length d21+ d22 of an observation line is measured on an imaging graph at the moment, the liquid port distance h11 is measured according to a formula, and the measured length is compared with an initial liquid port distance value in an initial state, so that the liquid port distance h11 can be adjusted by controlling d21+ d22, the liquid level is always in the optimal position, and the automatic compensation of the liquid level is achieved.
According to the method and the device, the relation between the measured value and the liquid gap distance can be more accurately obtained through imaging by the imaging device and calculation, the liquid gap distance is more accurately calculated according to actual production, the liquid level is more accurately compensated in real time, and the yield of the crystal bars is further improved.
And through imaging analysis of an imaging device, the liquid level of the silicon liquid is automatically compensated by utilizing the relationship between the measured value and the distance between the liquid ports, so that the distance between the liquid ports is always at the position most beneficial to crystal growth.
As a further preferred embodiment, the lower end of the crucible 1 is provided with a crucible shaft 12, the lifting device 5 comprises a lifting support 7, a guide rail slider assembly 8, a lifting screw rod 9 and a driving mechanism 6, the lower end of the crucible shaft 12 is arranged on the lifting support 7, the lifting support 7 is arranged on the guide rail slider assembly 8, the lifting screw rod 9 is arranged on the lifting support 7, the driving mechanism 6 is connected with the lifting screw rod 9, the driving mechanism 6 is a lifting motor reducer assembly, and the guide rail slider assembly 8 is provided with two sets. The lifting screw rod 9 is driven at a constant speed through the motor reducer, so that the crucible 1 and the lifting support 7 are lifted along the guide rail sliding block assembly 8, and the position of the crucible 1 is accurately controlled to realize automatic compensation of the liquid level.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (5)
1. A liquid level automatic compensation method is characterized by comprising the following steps:
s1: silicon liquid is contained in a crucible 1, a water-cooling heat shield 2 is arranged above a silicon liquid level 11 of the crucible 1, an imaging device 3 is arranged above the water-cooling heat shield 2, and a lifting device 5 is arranged below the crucible 1;
s2: the imaging device 3 emits light which passes through the screen port of the water-cooling heat shield 2 to form an observation point A1 on the silicon liquid surface 11, the observation point A1 forms an observation line B1 with the length of d12 on the silicon liquid surface 11, meanwhile, the screen port of the water-cooling heat shield 2 forms a projection point A2 under the mirror projection of the silicon liquid surface 11, the projection point A2 forms an observation line B2 with the length of d11 on the silicon liquid surface 11, the distance from the imaging device 3 to the silicon liquid surface 11 is h, the distance from the imaging device 3 to the screen port of the water-cooling heat shield 2 is d, and the relationship is satisfied:
d11/h11＝d/(h+h11)，d12/h11＝d/(h-h11)；
s3: and (3) measuring the distance h between the imaging device 3 and the liquid level 11 of the silicon liquid, measuring the distance d between the imaging device 3 and the screen opening of the water-cooling heat shield 2, measuring the lengths d11+ d12 of an observation line on an imaging graph of the imaging device 3, and solving the value of the distance h11 of the liquid opening according to the formula in the step S2.
S4: and (4) comparing the liquid level distance h11 solved in the step S3 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible 1 through the lifting device 5 according to the comparison result.
2. The method according to claim 1, wherein in the step S2, the light emitted from the imaging device 3 is imaged into the imaging visual area 31 through the water-cooled heat shield 2, the center of the imaging visual area 31 is the imaging center D1, the imaging visual area 31 is crescent-shaped, and the measurement point observation point tri C1 is selected from the imaging visual area 31, which comprises the following steps:
s5: the horizontal distance between the observation point three C1 and the imaging center D1 is L, the distance between the connection line of the observation point three C1 and the imaging center D1 in the imaging visible area 31 is D21+ D22, the distance between the imaging device 3 and the silicon liquid level 11 is h, the distance between the vertical point of the imaging device 3 and the actual imaging center D2 is h2, the distance between the imaging device 3 and the actual imaging center D2 is h3, and the radius of the actual imaging circle is h 4. Satisfies the relationship: h32＝h2+h22，
(h4-d21-d22)/h3＝d21/h11，d22/h11＝h4/h3；
S6: measuring the distance h between the imaging device 3 and the silicon liquid level 11, measuring the distance h2 between the vertical point of the imaging device 3 and the actual imaging center D2, measuring the distance h3 between the imaging device 3 and the actual imaging center D2, measuring the actual imaging circle radius h4, measuring the length D11+ D12 of an observation line on an imaging graph of the imaging device 3, and solving the value of the liquid port distance h11 through the formula in the step S5.
S7: and (4) comparing the liquid level distance h11 solved in the step S6 with the preset optimal liquid level position, and compensating the lifting of the liquid level of the crucible 1 through the lifting device 5 according to the comparison result.
3. The automatic liquid level compensation method as claimed in claim 1, wherein a crucible shaft 12 is provided at a lower end of the crucible 1, the lifting device 5 comprises a lifting bracket 7, a guide rail slider assembly 8, a lifting screw 9 and a driving mechanism 6, the lower end of the crucible shaft 12 is provided on the lifting bracket 7, the lifting bracket 7 is provided on the guide rail slider assembly 8, the lifting screw 9 is provided on the lifting bracket 7, and the driving mechanism 6 is connected with the lifting screw 9.
4. The automatic liquid level compensation method according to claim 3, wherein the driving mechanism 6 is a reduction gear assembly of a lifting motor.
5. The automatic liquid level compensation method as claimed in claim 3, wherein the guide rail slider assemblies 8 are provided in two sets.
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| US20130263773A1 (en) * | 2012-04-04 | 2013-10-10 | Sumco Corporation | Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method |
| CN104005083A (en) * | 2014-05-20 | 2014-08-27 | 北京工业大学 | Device and method for measuring liquid level height of molten silicon in single crystal furnace |
| CN110552059A (en) * | 2019-09-19 | 2019-12-10 | 宁夏隆基硅材料有限公司 | Liquid gap positioning device and method and single crystal furnace |
| WO2021012445A1 (en) * | 2019-07-22 | 2021-01-28 | 隆基绿能科技股份有限公司 | Method and device for determining liquid-to-opening distance, and single crystal furnace |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130263773A1 (en) * | 2012-04-04 | 2013-10-10 | Sumco Corporation | Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method |
| CN104005083A (en) * | 2014-05-20 | 2014-08-27 | 北京工业大学 | Device and method for measuring liquid level height of molten silicon in single crystal furnace |
| WO2021012445A1 (en) * | 2019-07-22 | 2021-01-28 | 隆基绿能科技股份有限公司 | Method and device for determining liquid-to-opening distance, and single crystal furnace |
| CN110552059A (en) * | 2019-09-19 | 2019-12-10 | 宁夏隆基硅材料有限公司 | Liquid gap positioning device and method and single crystal furnace |
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