CN215887306U - Temperature measuring device and crystal pulling equipment - Google Patents
Temperature measuring device and crystal pulling equipment Download PDFInfo
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- CN215887306U CN215887306U CN202121290511.3U CN202121290511U CN215887306U CN 215887306 U CN215887306 U CN 215887306U CN 202121290511 U CN202121290511 U CN 202121290511U CN 215887306 U CN215887306 U CN 215887306U
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Abstract
The application discloses temperature measuring device and crystal pulling equipment relates to solar photovoltaic technical field. The temperature measuring device specifically comprises: a lifting mechanism and at least one temperature sensor; the lifting mechanism is arranged outside the single crystal furnace, is connected with one end of the temperature sensor and is used for driving the temperature sensor to lift; the other end of the temperature sensor extends into the single crystal furnace through the first through hole, and the other end of the temperature sensor is close to and extends into the crucible or extends out of and is far away from the crucible under the driving of the lifting mechanism. In this application embodiment, temperature measuring device can accurate collection single crystal growing furnace thermal field temperature, and when effectively reducing the temperature regulation, promote the efficiency that adjusts the temperature, and then promote the production efficiency of monocrystalline silicon, reduce the manufacturing cost of monocrystalline silicon.
Description
Technical Field
The application belongs to the technical field of solar photovoltaic, and particularly relates to a temperature measuring device and crystal pulling equipment.
Background
With the development of photovoltaic technology, solar energy is widely popularized as a green, environment-friendly and renewable energy source. The demand of monocrystalline silicon as the most important raw material part of solar photovoltaic modules is increasing.
At present, the production process of monocrystalline silicon is mainly a Czochralski method. In the process of producing the monocrystalline silicon by the Czochralski method, the liquid level brightness is mainly acquired by vision when the temperature of the silicon liquid is adjusted to the seeding temperature range, and then the heating power in a monocrystalline furnace is controlled according to empirical values. However, the method for adjusting the heating power according to the visual collection of the liquid level brightness is prone to have the problems that the temperature in the furnace is too high or too low to exceed the range of the seeding temperature due to inaccurate judgment of the temperature in the furnace, and further the crystal pulling time is long, the efficiency is low, or the liquid level is crystallized.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application aims to provide a temperature measuring device and crystal pulling equipment, and the problem that the temperature in a single crystal furnace is not accurately judged by a method for acquiring the liquid level brightness by vision can be solved.
In a first aspect, an embodiment of the application provides a temperature measuring device, wherein a furnace body of a single crystal furnace is provided with a first through hole communicated with the outside, and a crucible is arranged in the single crystal furnace; the temperature measuring device includes: a lifting mechanism and at least one temperature sensor;
the lifting mechanism is arranged outside the single crystal furnace, is connected with one end of the temperature sensor and is used for driving the temperature sensor to lift;
the other end of the temperature sensor extends into the single crystal furnace through the first through hole, and the other end of the temperature sensor is close to and extends into the crucible or extends out of and is far away from the crucible under the driving of the lifting mechanism.
Optionally, the lifting mechanism includes: the bracket and a driving piece arranged on the bracket;
the bracket is connected with the single crystal furnace;
the driving piece is connected with the temperature sensor to drive the temperature sensor to lift.
Optionally, the temperature measuring device further includes: an elastic sheath;
the elastic sheath is arranged on the support, one end of the elastic sheath is opposite to the first through hole, and the other end of the elastic sheath extends towards the direction far away from the single crystal furnace;
at least part of the temperature sensor is sleeved in the elastic sheath.
Optionally, a first flange is arranged on the temperature sensor;
the other end of the elastic sheath is connected with the temperature sensor through the first flange.
Optionally, a second flange is arranged at the first through hole;
a bottom plate is arranged on the support and connected with the second flange, and a second through hole is formed in the bottom plate;
one end of the elastic sheath is opposite to the second through hole and is fixedly connected to the bottom plate;
the other end of the temperature sensor sequentially passes through the second through hole and the first through hole and extends into the single crystal furnace.
Optionally, the temperature measuring device further includes: a plurality of fasteners;
along the length direction of the elastic sheath, the fixing piece is sequentially sleeved outside the elastic sheath at intervals and is detachably connected with the support.
Optionally, the temperature sensor is a thermocouple, and a corundum sheath is arranged at one end of the thermocouple extending into the single crystal furnace.
Optionally, a thermal field assembly is further arranged in the single crystal furnace;
the thermal field assembly is arranged around the outer side of the crucible, and a third through hole is formed in the thermal field assembly;
under the drive of the lifting mechanism, the other end of the temperature sensor sequentially passes through the first through hole and the third through hole to extend into the crucible or be far away from the crucible.
Optionally, the temperature measuring device further includes: a controller;
the controller is respectively connected with the temperature sensor and the lifting mechanism, and the controller is used for controlling the lifting mechanism to lift according to the temperature collected by the temperature sensor.
In a second aspect, embodiments of the present application also provide a crystal puller, comprising: a single crystal furnace and the temperature measuring device;
the single crystal furnace is provided with an observation window;
and a temperature sensor of the temperature measuring device extends into the single crystal furnace through the observation window to measure the temperature of the thermal field of the single crystal furnace.
In this application embodiment, because under elevating system's drive, temperature-sensing ware's the other end is close to and stretches into in the crucible, or stretches out and keeps away from the crucible, consequently, in the phase of adjusting the temperature of monocrystalline silicon's production process, can drive temperature-sensing ware through elevating system and stretch into the crucible in measure the silicon liquid temperature in the crucible, thereby can be more accurate adjust the heating power in the monocrystalline furnace according to the silicon liquid temperature of gathering, reduce man-hour that adjusts the temperature, promote the efficiency that adjusts the temperature. And moreover, after the temperature measurement is finished, the temperature sensor is driven by the lifting mechanism to extend out and be away from the crucible, and the influence of the temperature sensor on the procedures of crystal pulling, dismounting, and the like can be effectively avoided. In this application embodiment, temperature measuring device can accurate collection single crystal growing furnace thermal field temperature, and when effectively reducing the temperature regulation, promote the efficiency that adjusts the temperature, and then promote the production efficiency of monocrystalline silicon, reduce the manufacturing cost of monocrystalline silicon.
Drawings
FIG. 1 is a schematic structural view of a crystal puller according to an embodiment of the present application.
Description of reference numerals:
10: a single crystal furnace; 11: a thermal field assembly; 101: a first through hole; 102: a crucible; 103: silicon liquid; 21: a lifting mechanism; 22: a temperature sensor; 210: a support; 211: a drive member; 30: an elastic sheath; 221: a first flange; 111: a third via.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application are capable of operation in sequences other than those illustrated or described herein. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The temperature measuring device and the crystal pulling apparatus provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings by specific embodiments and application scenarios thereof.
The temperature measuring device of the embodiment of the application can measure the temperature of a thermal field in a single crystal furnace, but is not limited to the temperature. In the embodiment of the application, the temperature measuring device is taken as an example for measuring the temperature of the thermal field in the single crystal furnace, and the structure and the principle of the measuring device are explained in detail, and the temperature measuring device can be executed by referring to when measuring the temperature of other components.
Referring to FIG. 1, a schematic diagram of a crystal puller according to an embodiment of the present application is shown.
In the embodiment of the present application, a first through hole 101 communicating with the outside is provided on the furnace body of the single crystal furnace 10. In practical applications, the first through hole 101 can be an original reserved hole on the single crystal furnace 10, so as to improve the utilization rate of the existing crystal pulling equipment and reduce the equipment replacement cost. For example, the first via 101 may be a reserved viewing window. Alternatively, the first through hole 101 may also be a through hole processed on the furnace body for measuring temperature, and a person skilled in the art may set the through hole according to actual conditions, which is not limited in the embodiments of the present application.
In the embodiment of the application, a crucible 102 is arranged in the single crystal furnace 10, and a silicon liquid 103 for pulling is arranged in the crucible 102. It can be understood that the silicon liquid 103 in the crucible 102 is formed by heating and melting silicon raw material, the process of heating the silicon raw material to the silicon liquid 103 is the same as the prior art, and the description of the embodiment of the present application is omitted.
In this embodiment, the temperature measuring device may specifically include: a lifting mechanism 21 and at least one temperature sensor 22; the lifting mechanism 21 is arranged outside the single crystal furnace 10, is connected with one end of the temperature sensor 22 and is used for driving the temperature sensor 22 to lift; the other end of the temperature sensor 22 extends into the single crystal furnace 10 through the first through hole 101, and the other end of the temperature sensor 22 is driven by the lifting mechanism 21 to be close to and extend into the crucible 102 or extend out of and away from the crucible 102.
In the embodiment of the present application, the other end of the temperature sensor 22 is close to and extends into the crucible 102, which means that the other end of the temperature sensor 22 extends below the liquid level of the silicon liquid 103 in the crucible 102, for example, the temperature sensor 22 may extend 20mm below the liquid level of the silicon liquid 103. Of course, those skilled in the art may set the temperature sensor 22 to extend 15mm, 30mm, etc. below the liquid level of the silicon liquid 103 according to different furnace types, thermal fields, specification types of the temperature sensor 22, etc., and this is not particularly limited in the embodiments of the present application.
It should be noted that when the temperature measuring device described in the embodiment of the present application is used to measure the temperature of other positions of the thermal field of the single crystal furnace, only the lifting position of the temperature sensor 22 in the single crystal furnace needs to be set reasonably, and the operation is simple and convenient. In the embodiment of the application, the position of the temperature sensor 22 can be adjusted at any time during the crystal pulling process to measure the temperature at any position in the thermal field, and is not limited to measuring the temperature of the silicon liquid 103 in the crucible 102, so that the temperature measuring device of the embodiment of the application can measure the temperature of the thermal field of the single crystal furnace 10 more flexibly.
In this application embodiment, because under elevating system 21's drive, temperature-sensing ware 22's the other end is close to and stretches into in crucible 102, or stretches out and keep away from crucible 102, consequently, in the phase of adjusting the temperature in the production process of monocrystalline silicon, can drive temperature-sensing ware 22 through elevating system 21 and stretch into in crucible 102 and measure the silicon liquid 103 temperature in the crucible 102, thereby can be more accurate adjust the heating power in the monocrystalline furnace 10 according to the silicon liquid 103 temperature of gathering, and then promote the accurate nature of interior temperature control of stove. Moreover, after the temperature measurement is finished, the temperature sensor 22 can be driven to extend out and be far away from the crucible 102 through the lifting mechanism 21 at any time, so that the temperature sensor 22 is positioned at a safe position in the single crystal furnace 10, and the influence of the temperature sensor 22 on the procedures of crystal pulling, furnace dismounting and the like is effectively avoided. In this application embodiment, temperature measuring device can the accurate 10 thermal field temperatures of collection single crystal growing furnace, when effectively reducing the temperature regulation, promotes the efficiency that adjusts the temperature, and then promotes the production efficiency of monocrystalline silicon, reduces the manufacturing cost of monocrystalline silicon.
In the embodiment of the present application, the number of the temperature sensors 22 may be one or more. For example, in order to improve the accuracy of the temperature measured by the temperature sensors 22, a plurality of temperature sensors 22 may be provided to measure the temperature of the silicon melt 103 in the crucible 102, and the average value of the temperatures detected by the plurality of temperature sensors 22 may be used as the detection result. In addition, in the case that the number of the temperature sensors 22 is multiple, the multiple temperature sensors 22 can also be used as backup for each other, so that even if one of the temperature sensors 22 is damaged, the accuracy of measuring the temperature of the silicon liquid 103 is not affected.
In the embodiment of the present application, the temperature sensor 22 may be a thermocouple (e.g., a platinum-rhodium thermocouple, etc.), and a corundum sheath is disposed at an end of the thermocouple extending into the single crystal furnace 10. Specifically, the outer layer of one end of the thermocouple extending into the single crystal furnace 10 adopts a corundum tube which can resist temperature above 1600 ℃ as the outer protection sleeve of the thermocouple.
Optionally, the lifting mechanism 21 may specifically include: a bracket 210 and a driving member 211 arranged on the bracket 210; the bracket 210 is connected with the single crystal furnace 10; the driving member 211 is connected to the temperature sensor 22 to drive the temperature sensor 22 to move up and down.
In the embodiment of the application, the driving part 211 and the temperature sensor 22 can be arranged on the support 210, so that the carrying and the transportation of the temperature measuring device are more convenient, the temperature measuring device can be installed on the furnace body of the single crystal furnace 10 through the support 210, and the installation of the temperature measuring device is more convenient and faster.
In the embodiment of the present application, the driving member 211 may specifically include: at least one of a motor and a cylinder. In practical applications, the output shaft of the motor is usually connected to the cold end of the thermocouple (opposite to the hot end of the thermocouple extending into the single crystal furnace 10) to drive the thermocouple to move up and down.
In the embodiment of the application, the temperature measuring device can be arranged on the furnace platform of the single crystal furnace 10 before the furnace is opened, and the temperature measuring device is in sealing connection with the single crystal furnace 10, so that the temperature measuring device can be synchronously vacuumized along with the single crystal furnace 10 in the vacuumizing stage, the thermocouple is fully preheated after the silicon raw material feeding and melting in the crucible 102 are completed, and then the thermocouple is driven by the driving piece 211 such as a motor to extend into the position below the liquid level of the silicon liquid 103 in the crucible 102 so as to measure the temperature of the silicon liquid 103; after the temperature measurement is completed, the thermocouple can be driven to rise to a safe position through a driving piece 211 such as a motor after a full precooling process. It is understood that the safety position is a position within the single crystal furnace 10 away from the crucible 102 and not affecting the disassembling furnace, and the temperature at the safety position is low relative to the temperature of the silicon melt 103. For example, the safe position may be a position in which the ceiling of the single crystal furnace 10 is close to the side wall of the single crystal furnace 10 and does not affect the processes of pulling, disassembling, etc. in the single crystal furnace 10. In the embodiment of the application, after the temperature measurement is finished, the thermocouple is lifted to the safe position, so that the service life of the thermocouple can be effectively prolonged.
In this embodiment, in order to more accurately control the ascending and descending of the temperature sensor 22, the temperature measuring device 20 may further include: a controller; the controller is respectively connected with the temperature sensor 22 and the lifting mechanism 21, and the controller is used for controlling the lifting of the lifting mechanism 21 according to the temperature collected by the temperature sensor 22.
In practical applications, the controller can control the temperature sensor 22 to rise/fall more accurately, so as to effectively protect the temperature sensor 22 and prevent the temperature sensor 22 from being damaged due to too fast temperature rise or temperature fall rate. Wherein, the thermocouple rise control: after temperature measurement is finished, the thermocouple is slowly lifted to a safe position according to a preset speed through a precooling process; and (3) controlling the thermocouple drop: the thermocouple is slowly lowered to a temperature measuring position from a safe position through a preheating process according to a preset speed.
In the embodiment of the application, the controller may be a controller separately provided with the temperature measuring device, or may be a controller of the single crystal furnace 10 or the crystal pulling equipment, and a person skilled in the art may set the controller according to actual requirements.
In the embodiment of the application, the preheating/precooling process design of the thermocouple needs to meet the thermal shock resistance of the corundum tube, and specifically, the heating or cooling rate of the thermocouple per minute can be within the range of 0-30 ℃. In practical application, the temperature rising or reducing rate of the thermocouple can be adjusted in real time according to the temperature in the furnace, but the constant rate is not kept, so that the service life of the thermocouple can be prolonged more favorably. For example, the temperature rise rate of the thermocouple may be initially in the range of 0 to 30 ℃, and the temperature rise rate of the thermocouple may be gradually decreased to the range of 0 to 10 ℃ as the temperature in the furnace increases.
In this application embodiment, because the thermocouple needs to satisfy the lift demand, and need have good sealing performance with single crystal growing furnace 10 between, consequently, temperature measuring device can also include: an elastic sheath 30; the elastic sheath 30 is arranged on the bracket 210, one end of the elastic sheath 30 is opposite to the first through hole 101, and the other end extends towards the direction far away from the single crystal furnace 10; at least a portion of the temperature sensor 22 is disposed in the elastic sheath 30.
In practical application, the elastic sheath 30 may be hermetically connected with the furnace body, and specifically, one end of the two ends of the elastic sheath 30 may be hermetically connected with the bracket 210/furnace body, and the other end may be hermetically connected with the temperature sensor 22/bracket 210. In the embodiment of the present application, the elastic sheath 30 is illustrated by way of example in which one end is hermetically connected to the bracket 210 and the other end is hermetically connected to the temperature sensor 22.
In the present embodiment, the elastic sheath 30 includes, but is not limited to, a stainless steel bellows. The stainless steel corrugated pipe has wide application range and low cost, so the stainless steel corrugated pipe is sleeved outside the thermocouple, and correspondingly has the advantages.
In practical applications, the corrugated stainless steel tube and the bracket 210 may be connected by welding or may be detachably connected by a fastener. In order to make the connection between the corrugated stainless steel tube and the support 210 simpler, the two ends of the corrugated stainless steel tube can be provided with fixing parts, the fixing parts are arranged along the circumferential direction of the corrugated stainless steel tube and extend towards the direction far away from the center of the corrugated stainless steel tube, and therefore the connection between the corrugated stainless steel tube and the support 210 can be made simpler and more convenient through the fixing parts.
In the embodiment of the present application, in order to improve the sealing reliability between the corrugated stainless steel pipe and the support 210 and between the corrugated stainless steel pipe and the temperature sensor 22, a sealing ring or a sealing gasket may be disposed between the corrugated stainless steel pipe and the support 210 and between the corrugated stainless steel pipe and the temperature sensor 22, and the specific sealing ring or the sealing gasket may be made of plastic, nylon, rubber, or the like.
Optionally, the temperature sensor 22 is provided with a first flange 221; the other end of the elastic sheath 30 is connected to the temperature sensor 22 through a first flange 221.
In practical applications, the first flange 221 and the temperature sensor 22 are of a single-piece structure, so that the connection between the temperature sensor 22 and the elastic sheath 30 is simpler.
In the embodiment of the application, in order to make the connection between the bracket 210 and the furnace body simpler, the first through hole 101 is provided with a second flange; a bottom plate is arranged on the bracket 210, the bottom plate is connected with the second flange, and a second through hole is formed in the bottom plate; one end of the elastic sheath 30 is opposite to the second through hole and is fixedly connected with the bottom plate; the other end of the temperature sensor 22 sequentially passes through the second through hole and the first through hole 101 and extends into the single crystal furnace 10.
It is understood that the second flange at the first through hole 101 may also be a connecting member at a reserved hole on the furnace body, and is not a flange in a strict sense. The base plate may also be of flanged construction. In practical application, in order to realize the sealing connection between the flange and the bottom plate, a sealing ring or a sealing gasket can be clamped between the flange and the bottom plate.
Optionally, the temperature measuring device may further include: a plurality of fasteners; along the length direction of the elastic sheath 30, the fixing parts are sequentially sleeved outside the elastic sheath 30 at intervals and are detachably connected with the bracket 210.
In the embodiment of the application, the fixing piece can be a hose clamp or a binding band and the like. Along the length direction of elastic sheath 30, elastic sheath 30 can be fixed by the fixing piece, and elastic sheath 30 is prevented from bending. For example, when the elastic sheath 30 is a stainless steel corrugated pipe, the stainless steel corrugated pipe is fixed on the bracket 210 along the length direction by the hose clamp, so that the stainless steel corrugated pipe can be effectively prevented from being bent.
In practical application, a thermal field assembly 11 is also generally arranged in the single crystal furnace 10; the thermal field assembly 11 is enclosed outside the crucible 102, so that the temperature sensor 22 needs to pass through the thermal field assembly 11 when being driven by the lifting mechanism 21 to extend into the crucible 102. Specifically, a third through hole 111 is formed in the thermal field assembly 11; driven by the lifting mechanism 21, the other end of the temperature sensor 22 sequentially passes through the first through hole 101 and the third through hole 111 to extend into the crucible 102 or to be away from the crucible 102.
In practical application, the third through hole 111 of the thermal field assembly 11 needs to be matched with the outer diameter of the end of the temperature sensor 22 extending into the single crystal furnace 10, so that the third through hole 111 has the advantages of flexible penetration of the temperature sensor 22 and small heat dissipation.
In the embodiment of the present application, the thermal field assembly 11 includes, but is not limited to, a large cover felt, a heat preservation cover, a heat shield ring felt, and other thermal field members. In practical applications, the thermal field through which the temperature sensor 22 is inserted is different according to different specific positions of the temperature sensor 22, and those skilled in the art can set the thermal field according to practical situations.
In the embodiment of the application, the temperature measuring position can be set according to the position of the thermocouple, namely, the temperature measuring probe of the thermocouple extends into the position below the surface of the silicon liquid 103 in the crucible 102. Moreover, the thermocouple is typically located near the edge of the crucible wall of the crucible 102 to allow temperature data to be collected during the entire crystal pulling process without affecting the pulling process, thereby avoiding wasted labor hours.
In practical application, the real-time data acquired by the temperature measuring device can be synchronously calibrated in one-to-one correspondence with the liquid level brightness and the corresponding heating power, so that the accuracy of controlling the heating power according to the vision acquired liquid level brightness can be improved.
In summary, the temperature measuring device of the embodiment of the present application at least includes the following advantages:
in this application embodiment, because under elevating system's drive, temperature-sensing ware's the other end is close to and stretches into in the crucible, or stretches out and keeps away from the crucible, consequently, in the phase of adjusting the temperature of monocrystalline silicon's production process, can drive temperature-sensing ware through elevating system and stretch into the crucible in measure the silicon liquid temperature in the crucible, thereby can be more accurate adjust the heating power in the monocrystalline furnace according to the silicon liquid temperature of gathering, reduce man-hour that adjusts the temperature, promote the efficiency that adjusts the temperature. And moreover, after the temperature measurement is finished, the temperature sensor is driven by the lifting mechanism to extend out and be away from the crucible, and the influence of the temperature sensor on the procedures of crystal pulling, dismounting, and the like can be effectively avoided. In this application embodiment, temperature measuring device can accurate collection single crystal growing furnace thermal field temperature, and when effectively reducing the temperature regulation, promote the efficiency that adjusts the temperature, and then promote the production efficiency of monocrystalline silicon, reduce the manufacturing cost of monocrystalline silicon.
The embodiment of the application also provides crystal pulling equipment, which specifically comprises: the single crystal furnace and the temperature measuring device; the single crystal furnace is provided with an observation window; and a temperature sensor of the temperature measuring device extends into the single crystal furnace through the observation window to measure the temperature of the thermal field in the single crystal furnace.
It should be noted that, in the embodiment of the present application, the structure and the working principle of the temperature measuring device are the same as those of the temperature measuring devices in the foregoing embodiments, and are not described herein again.
In this application embodiment, can carry out real-time detection and demarcation through temperature measuring device to the thermal field temperature of single crystal growing furnace, especially in the phase that adjusts the temperature of the production process of monocrystalline silicon, can drive temperature-sensing ware through elevating system and stretch into the crucible in measure the silicon liquid temperature in the crucible to the silicon liquid temperature that can be more accurate is adjusted the heating power in the single crystal growing furnace according to the silicon liquid temperature of gathering, reduces and adjusts the temperature man-hour, promotes the efficiency that adjusts the temperature. And moreover, after the temperature measurement is finished, the temperature sensor is driven by the lifting mechanism to extend out and be away from the crucible, and the influence of the temperature sensor on the procedures of crystal pulling, dismounting, and the like can be effectively avoided. In this application embodiment, temperature measuring device can accurate collection single crystal growing furnace thermal field temperature, and when effectively reducing the temperature regulation, promote the efficiency that adjusts the temperature, and then promote the production efficiency of monocrystalline silicon, reduce the manufacturing cost of monocrystalline silicon.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A temperature measuring device is used for a single crystal furnace, and is characterized in that a furnace body of the single crystal furnace is provided with a first through hole communicated with the outside, and a crucible is arranged in the single crystal furnace; the temperature measuring device includes: a lifting mechanism and at least one temperature sensor;
the lifting mechanism is arranged outside the single crystal furnace, is connected with one end of the temperature sensor and is used for driving the temperature sensor to lift;
the other end of the temperature sensor extends into the single crystal furnace through the first through hole, and the other end of the temperature sensor is close to and extends into the crucible or extends out of and is far away from the crucible under the driving of the lifting mechanism.
2. The temperature measuring device according to claim 1, wherein the elevating mechanism comprises: the bracket and a driving piece arranged on the bracket;
the bracket is connected with the single crystal furnace;
the driving piece is connected with the temperature sensor to drive the temperature sensor to lift.
3. The thermometric apparatus of claim 2, further comprising: an elastic sheath;
the elastic sheath is arranged on the support, one end of the elastic sheath is opposite to the first through hole, and the other end of the elastic sheath extends towards the direction far away from the single crystal furnace;
at least part of the temperature sensor is sleeved in the elastic sheath.
4. The temperature measuring device of claim 3, wherein the temperature sensor is provided with a first flange;
the other end of the elastic sheath is connected with the temperature sensor through the first flange.
5. The temperature measuring device of claim 3, wherein a second flange is provided at the first through hole;
a bottom plate is arranged on the support and connected with the second flange, and a second through hole is formed in the bottom plate;
one end of the elastic sheath is opposite to the second through hole and is fixedly connected to the bottom plate;
the other end of the temperature sensor sequentially passes through the second through hole and the first through hole and extends into the single crystal furnace.
6. The thermometric apparatus of claim 3, further comprising: a plurality of fasteners;
along the length direction of the elastic sheath, the fixing piece is sequentially sleeved outside the elastic sheath at intervals and is detachably connected with the support.
7. The temperature measuring device according to claim 1, wherein the temperature sensor is a thermocouple, and a corundum sheath is arranged at one end of the thermocouple extending into the single crystal furnace.
8. The temperature measuring device according to claim 1, wherein a thermal field assembly is further arranged in the single crystal furnace;
the thermal field assembly is arranged around the outer side of the crucible, and a third through hole is formed in the thermal field assembly;
under the drive of the lifting mechanism, the other end of the temperature sensor sequentially passes through the first through hole and the third through hole to extend into the crucible or be far away from the crucible.
9. The thermometric apparatus of claim 1, further comprising: a controller;
the controller is respectively connected with the temperature sensor and the lifting mechanism, and the controller is used for controlling the lifting mechanism to lift according to the temperature collected by the temperature sensor.
10. A crystal puller, comprising: a single crystal furnace, and the temperature measuring device according to any one of claims 1 to 9;
the single crystal furnace is provided with an observation window;
and a temperature sensor of the temperature measuring device extends into the single crystal furnace through the observation window to measure the temperature of the thermal field of the single crystal furnace.
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| CN202121290511.3U CN215887306U (en) | 2021-06-09 | 2021-06-09 | Temperature measuring device and crystal pulling equipment |
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| CN202121290511.3U CN215887306U (en) | 2021-06-09 | 2021-06-09 | Temperature measuring device and crystal pulling equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114838587A (en) * | 2022-06-15 | 2022-08-02 | 北京金隅琉水环保科技有限公司 | Rotary kiln temperature monitoring equipment and control system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114838587A (en) * | 2022-06-15 | 2022-08-02 | 北京金隅琉水环保科技有限公司 | Rotary kiln temperature monitoring equipment and control system |
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