CN113851407B - 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质 - Google Patents

对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质

Info

Publication number
CN113851407B
CN113851407B CN202110669672.1A CN202110669672A CN113851407B CN 113851407 B CN113851407 B CN 113851407B CN 202110669672 A CN202110669672 A CN 202110669672A CN 113851407 B CN113851407 B CN 113851407B
Authority
CN
China
Prior art keywords
substrate
mask
alignment
distance
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110669672.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113851407A (zh
Inventor
小林康信
谷和宪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of CN113851407A publication Critical patent/CN113851407A/zh
Application granted granted Critical
Publication of CN113851407B publication Critical patent/CN113851407B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0618—Apparatus for monitoring, sorting, marking, testing or measuring using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202110669672.1A 2020-06-26 2021-06-17 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质 Active CN113851407B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-110571 2020-06-26
JP2020110571A JP7440356B2 (ja) 2020-06-26 2020-06-26 アライメント装置、成膜装置、アライメント方法、電子デバイスの製造方法、プログラム及び記憶媒体

Publications (2)

Publication Number Publication Date
CN113851407A CN113851407A (zh) 2021-12-28
CN113851407B true CN113851407B (zh) 2026-03-06

Family

ID=78973029

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110669672.1A Active CN113851407B (zh) 2020-06-26 2021-06-17 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质

Country Status (3)

Country Link
JP (1) JP7440356B2 (https=)
KR (1) KR102625048B1 (https=)
CN (1) CN113851407B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230153052A (ko) * 2022-04-28 2023-11-06 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 전자 디바이스의 제조방법 및 컴퓨터 프로그램 기록매체
JP2024024464A (ja) 2022-08-09 2024-02-22 キヤノントッキ株式会社 アライメント装置、成膜装置、制御方法、電子デバイスの製造方法、プログラム及び記憶媒体
CN115874148B (zh) * 2022-09-19 2024-11-08 京东方科技集团股份有限公司 一种整理装置和蒸镀设备
JP2025022132A (ja) 2023-08-02 2025-02-14 キヤノントッキ株式会社 成膜装置、電子デバイスの製造方法及び成膜方法
JP2025087461A (ja) * 2023-11-29 2025-06-10 キヤノントッキ株式会社 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180136211A (ko) * 2017-06-14 2018-12-24 주식회사 에스에프에이 기판과 마스크의 정밀 얼라인 시스템 및 정밀 얼라인 방법
CN109722626A (zh) * 2017-10-31 2019-05-07 佳能特机株式会社 对准装置和方法、成膜装置和方法及电子器件的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093514A1 (ja) * 2003-04-11 2004-10-28 Fuji Machine Mfg. Co., Ltd. 基板搬送方法および装置
CN101844864B (zh) * 2009-03-24 2013-08-28 北京京东方光电科技有限公司 玻璃基板及玻璃基板的切割方法
JP6370148B2 (ja) * 2014-07-30 2018-08-08 株式会社ディスコ 保持治具生成装置
JP6455176B2 (ja) 2015-01-23 2019-01-23 コニカミノルタ株式会社 光書き込み装置、画像形成装置及び光書き込み装置の製造方法
JP6212507B2 (ja) * 2015-02-05 2017-10-11 Ｔｏｗａ株式会社 切断装置及び切断方法
JP2018072541A (ja) * 2016-10-28 2018-05-10 キヤノン株式会社 パターン形成方法、基板の位置決め方法、位置決め装置、パターン形成装置、及び、物品の製造方法
KR20190124610A (ko) * 2018-04-26 2019-11-05 캐논 톡키 가부시키가이샤 기판 반송 시스템, 전자 디바이스 제조장치 및 전자 디바이스 제조방법
KR102405438B1 (ko) * 2018-06-25 2022-06-03 캐논 톡키 가부시키가이샤 마스크 위치조정장치, 성막장치, 마스크 위치조정방법, 성막방법, 및 전자디바이스의 제조방법
KR102374037B1 (ko) * 2018-06-29 2022-03-11 캐논 톡키 가부시키가이샤 기판 검사 시스템, 전자 디바이스 제조 시스템, 기판 검사 방법, 및 전자 디바이스 제조 방법
JP7170524B2 (ja) * 2018-12-14 2022-11-14 キヤノントッキ株式会社 基板載置方法、成膜方法、成膜装置、有機ｅｌパネルの製造システム
KR102128888B1 (ko) * 2019-02-19 2020-07-01 캐논 톡키 가부시키가이샤 성막 장치, 성막 방법, 및 전자 디바이스 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180136211A (ko) * 2017-06-14 2018-12-24 주식회사 에스에프에이 기판과 마스크의 정밀 얼라인 시스템 및 정밀 얼라인 방법
CN109722626A (zh) * 2017-10-31 2019-05-07 佳能特机株式会社 对准装置和方法、成膜装置和方法及电子器件的制造方法

Also Published As

Publication number Publication date
CN113851407A (zh) 2021-12-28
JP2022007538A (ja) 2022-01-13
JP7440356B2 (ja) 2024-02-28
KR102625048B1 (ko) 2024-01-15
KR20220000821A (ko) 2022-01-04

Similar Documents

Publication Publication Date Title
CN113851407B (zh) 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质
KR101975123B1 (ko) 기판 재치 장치, 성막 장치, 기판 재치 방법, 성막 방법 및 전자 디바이스의 제조 방법
CN111378925B (zh) 对准系统、成膜装置、成膜方法以及电子器件的制造方法
JP7244401B2 (ja) アライメント装置、成膜装置、アライメント方法、成膜方法、及び電子デバイスの製造方法
CN113644018B (zh) 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质
CN114318229B (zh) 成膜装置、调整方法及电子器件的制造方法
CN113851406B (zh) 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质
CN113846305B (zh) 对准装置、成膜装置、对准方法、电子器件的制造方法及存储介质
CN116330309A (zh) 动作设定装置、动作设定方法及电子器件的制造方法
CN119604641A (zh) 对准装置、成膜装置、控制方法、电子器件的制造方法、程序及存储介质
KR102665607B1 (ko) 얼라인먼트 장치, 얼라인먼트 방법, 성막 장치, 및 성막 방법
CN119372593A (zh) 成膜装置、成膜方法以及制造方法
JP2024118247A (ja) 成膜装置、成膜方法及び電子デバイスの製造方法
CN121931492A (zh) 检查装置、成膜系统、检查方法及电子器件的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant