CN113794049A

CN113794049A - Three-dimensional substrate integrated antenna based on multilayer laminated dielectric integrated waveguide

Info

Publication number: CN113794049A
Application number: CN202110908984.3A
Authority: CN
Inventors: 李雨键; 曹迪; 王均宏
Original assignee: Beijing Jiaotong University
Current assignee: Beijing Jiaotong University
Priority date: 2021-08-09
Filing date: 2021-08-09
Publication date: 2021-12-14
Anticipated expiration: 2041-08-09
Also published as: CN113794049B

Abstract

The invention provides a three-dimensional substrate integrated antenna based on a multilayer laminated dielectric integrated waveguide. The metal-plated multilayer ceramic capacitor comprises N layers of medium substrates which are vertically stacked from bottom to top in sequence, wherein metal layers are coated on two surfaces of two layers of medium substrates, metal layers are coated on the upper surfaces of other layers of medium substrates, corresponding holes are etched in the metal layers, and metalized holes are integrated in the medium substrates of each layer; the metallized holes in two layers of dielectric substrates form substrate integrated waveguides in the horizontal direction, and the metallized holes in the other layers of dielectric substrates form dielectric integrated waveguides; the metal layer of the dielectric substrate of each layer, the metallized holes in the metal layer and the etched slits on the metal layer together realize the antenna structure. The antenna can realize horizontal and vertical transmission of electromagnetic energy in the multilayer dielectric substrate; the substrate integration of the three-dimensional structure can be realized, and the excellent performance of the three-dimensional structure is ensured.

Description

Three-dimensional substrate integrated antenna based on multilayer laminated dielectric integrated waveguide

Technical Field

The invention relates to the technical field of antennas, in particular to a three-dimensional substrate integrated antenna based on multilayer laminated dielectric integrated waveguide.

Background

Substrate integrated devices and circuits play a vital role in advanced wireless communication systems. While single layer geometries are easy to process, the connection topology becomes a challenge in the design process as the size of the overall module or system increases. In the design, extra long substrate-integrated transmission lines or cross-bridges must be introduced as interconnections between elements, which not only reduces the efficiency of operation, but also takes up more space. Therefore, multilayer geometries with more design flexibility are receiving more and more attention. Interconnections between different layers are of great significance for the implementation of millimeter wave devices or systems in multilayer substrates. The currently widely used vertical interconnection structures are divided into two types, namely through holes and apertures, while blind holes or buried holes in through hole type interconnections are only suitable for connecting structures in adjacent layers, and the aperture coupling mode can cause energy leakage due to air layers possibly existing between dielectric plates of each layer. Unlike the metal waveguide of the conventional closed geometric structure, the gap waveguide skillfully utilizes the stopband phenomenon formed by the air layer between the conductive plate and the equivalent magnetic conductor plate, so that power leakage can be effectively suppressed without requiring a completely closed geometric structure. On the other hand, the existing multilayer substrate integrated structure usually only stacks single-layer substrate designs, and devices that can really satisfy the three-dimensional structure characteristics are difficult to be directly integrated into the substrate.

Based on the above problems, how to realize a vertical interconnection structure having characteristics of excellent performance, convenience in processing, and the like, and how to fully utilize dimensions in the vertical direction of an overlooked multilayer substrate in addition to the vertical interconnection structure, and extend the degree of freedom in design of a substrate integrated device are a key problem to be solved urgently.

Disclosure of Invention

The embodiment of the invention provides a three-dimensional substrate integrated antenna based on a multilayer laminated dielectric integrated waveguide, which is used for realizing the conversion and transmission of electromagnetic energy in the vertical and horizontal directions of a substrate and realizing the direct integration of a three-dimensional structure device into the multilayer substrate, so that the three-dimensional structure device has the excellent characteristics of a three-dimensional structure.

In order to achieve the purpose, the invention adopts the following technical scheme.

A three-dimensional substrate integrated antenna based on multilayer laminated dielectric integrated waveguide comprises:

n layers of medium substrates are vertically stacked from bottom to top in sequence, N is greater than 1 and is a positive number, metal layers cover the upper surface or the lower surface of each medium substrate, corresponding apertures are etched in each metal layer, and metalized holes are integrated in each layer of medium substrate;

the metallized holes in each dielectric substrate enclose one or more closed structures, an air layer with a certain thickness is arranged between each layer of dielectric substrate, and the metallized holes in the dielectric substrates form a dielectric integrated waveguide;

the metal layer of the dielectric substrate of each layer, the metallized holes in the metal layer and the etched slits on the metal layer together realize the antenna structure.

Preferably, the antenna comprises 16 layers of dielectric substrates, wherein the dielectric substrates 1-9 of the layers 1-9 from bottom to top are used for forming a three-dimensional orthogonal mode coupler, and the dielectric substrates 10-16 of the layers 10-16 are used for forming a dual-polarized pyramid horn antenna.

Preferably, the metallized

holes

20,21, 24, 25, 30, the

metal layers

1, 18, 23,27 and the

apertures

22,26,32 in the dielectric substrate of layers 1-3 together form one E-plane power divider in the orthomode coupler; the metallized

holes

28,29,34, 35, 39, the

metal layers

19,27, 33,38 and the

apertures

31,37,41 in the dielectric substrates of layers 3-5 together form an E-plane power divider orthogonal to the aforementioned power divider.

Preferably, the metallized holes 25 in the dielectric substrate of layer 2 and 35 in the dielectric substrate of layer 4 are used to achieve impedance matching of the two orthogonal E-plane power splitters within the bandwidth.

Preferably, the metallized hole 48 in the dielectric substrate of the 7 th layer and the

metallized holes

52 and 53 in the dielectric substrate of the 8 th layer together form a polarization separation membrane in the three-dimensional orthogonal mode coupler, so that the two orthogonal polarized waves are combined and separated at a common port, and the impedance matching of the orthogonal mode coupler and the high isolation of the orthogonal polarized waves are ensured.

Preferably, the antenna is a dual-polarized horn antenna fed by an orthogonal mode coupler.

Preferably, air holes for focusing the antenna beams are etched in the dielectric substrate of the topmost and the next-to-topmost layers.

Preferably, the dielectric substrate is 0.762mm in thickness, the dielectric constant is 3.66, the air layer is 0-1mm in thickness, and the metal layer is 0.035mm in thickness.

Preferably, the electromagnetic energy is transmitted vertically and horizontally through the aperture in the metal layer and the closure mechanism enclosed by the metallized through holes.

Preferably, the size of the rectangular gap 22 etched in the metal layer on the layer 1 dielectric substrate is 3.27mm by 0.4mm, the diameter of the metallized hole in the layer 1 dielectric substrate is 0.4mm, and the aperture spacing is 0.6 mm;

the size of a rectangular gap 26 etched in the metal layer on the 2 nd dielectric substrate is 3.3mm x 0.3mm, the distance between the two gaps is 12mm, the diameter of a first metalized hole in the 2 nd dielectric substrate is 1.2mm, the aperture distance is 2mm, and the diameter of a second metalized hole is 0.2 mm;

the size of a first rectangular gap etched in the metal layer on the 3 rd dielectric substrate is 3.42mm by 0.4mm, the size of a second rectangular gap is 3.3mm by 0.6mm, the diameter of a first metallized hole on the 3 rd dielectric substrate is 0.4mm, the aperture spacing is 0.6mm, the diameter of a second metallized hole is 1.2mm, and the aperture spacing is 2 mm;

the size of the rectangular gap etched on the metal layer on the 4 th dielectric substrate is 3.3mm x 0.6mm, the size of the rectangular gap is 3.3mm x 0.3mm, the diameter of the first metallized hole on the 4 th dielectric substrate is 1.2mm, the hole diameter spacing is 2mm, and the diameter of the second metallized hole is 0.2 mm.

According to the technical scheme provided by the embodiment of the invention, the antenna can realize horizontal and vertical transmission of electromagnetic energy in the multilayer dielectric substrate; the substrate integration of the three-dimensional structure can be realized, and the excellent performance of the three-dimensional structure is ensured.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a structural diagram of a three-dimensional substrate integrated antenna according to an embodiment of the present invention;

fig. 2 is a layered structure diagram of a three-dimensional orthogonal mode coupler fed dual-polarized horn antenna based on a dielectric integrated waveguide according to an embodiment of the present invention.

Fig. 3 is a top view of a dielectric substrate 1 according to an embodiment of the present invention.

Fig. 4 is a top view of a dielectric substrate 2 according to an embodiment of the present invention.

Fig. 5 is a top view of an intermediate substrate 3 according to an embodiment of the present invention.

Fig. 6 is a top view of an intermediate substrate 4 according to an embodiment of the present invention.

Fig. 7 is a top view of an intermediate substrate 5 according to an embodiment of the present invention.

Fig. 8 is a top view of an intermediate substrate 6 according to an embodiment of the present invention.

Fig. 9 is a top view of an intermediate substrate 7 according to an embodiment of the present invention.

Fig. 10 is a top view of an intermediate substrate 8 according to an embodiment of the present invention.

Fig. 11 is a top view of a dielectric substrate 9 according to an embodiment of the present invention.

Fig. 12 is a top view of a dielectric substrate 10 according to an embodiment of the present invention.

Fig. 13 is a top view of a dielectric substrate 11 according to an embodiment of the present invention.

Fig. 14 is a top view of a dielectric substrate 12 according to an embodiment of the present invention.

Fig. 15 is a top view of an intermediate substrate 13 according to an embodiment of the present invention.

Fig. 16 is a top view of a dielectric substrate 14 according to an embodiment of the present invention.

Fig. 17 is a top view of an intermediate substrate 15 according to an embodiment of the present invention.

Fig. 18 is a top view of a dielectric substrate 16 according to an embodiment of the present invention.

FIG. 19 shows the result of designing the electric field distribution in a three-dimensional orthomode coupler with 1-9 layers according to an embodiment of the present invention.

Fig. 20 shows the S-parameter design result of a three-dimensional orthogonal-mode coupler-fed dual-polarized horn antenna according to an embodiment of the present invention.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or coupled. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

For the convenience of understanding the embodiments of the present invention, the following description will be further explained by taking several specific embodiments as examples in conjunction with the drawings, and the embodiments are not to be construed as limiting the embodiments of the present invention.

The embodiment of the invention provides a three-dimensional substrate integrated antenna based on a multilayer laminated dielectric integrated waveguide, which is a dual-polarized pyramid horn antenna, the structure diagram of which is shown in figure 1, N layers of dielectric substrates are vertically stacked from bottom to top in sequence, N is greater than 1 and is a positive number, metal layers are covered on the upper surface or the lower surface of each dielectric substrate, corresponding apertures are etched on the metal layers, and metalized apertures are integrated in the dielectric substrate of each layer. The metallized holes in the dielectric substrates surround one or more closed structures, air layers with certain thickness exist between each layer of dielectric substrates, and the metallized holes in the dielectric substrates form a dielectric integrated waveguide.

The metal layer of the dielectric substrate of each layer, the metallized holes in the metal layer and the etched slits on the metal layer together realize the antenna structure. Electromagnetic energy is transmitted in the vertical direction and the horizontal direction through a closing mechanism formed by the hole seams on the metal layer and the metalized through holes.

In practical application, the substrate integrated waveguide in the horizontal direction can be formed by the metallized holes in the lowest layer and the dielectric substrate in the third layer from bottom to top, and the metallized holes in the dielectric substrates in other layers form the dielectric integrated waveguide.

Fig. 2 is a layered structure diagram of a three-dimensional orthogonal mode coupler fed dual-polarized horn antenna based on a dielectric integrated waveguide according to an embodiment of the present invention, which includes 16 layers of dielectric substrates, where the 1 st to 9 th layers of dielectric substrates are used to form a three-dimensional orthogonal mode coupler, and the 10 th to 16 th layers of dielectric substrates are used to form a dual-polarized horn antenna. The method specifically comprises the following steps:

fig. 3 is a top view of a dielectric substrate 1 according to an embodiment of the present invention. The first dielectric substrate 1 with double-sided metal layers 17 and 18, a horizontal substrate integrated waveguide in the dielectric substrate 1 is composed of metallized holes 20, one end of the substrate integrated waveguide is short-circuited by metal holes 21, and a rectangular slot 22 is etched on the upper surface metal layer 18.

Fig. 4 is a top view of a dielectric substrate 2 according to an embodiment of the present invention. The upper surface of the second layer of dielectric substrate 2 is covered with a metal layer 23, metallized holes 24 and 25 in the dielectric substrate 2 are respectively used for forming a dielectric integrated waveguide and improving structural impedance matching, and a rectangular slot 26 is etched on the metal layer 23.

Fig. 5 is a top view of an intermediate substrate 3 according to an embodiment of the present invention. The double surfaces of the third layer of dielectric substrate 3 are covered with

metal layers

19 and 27, the metal via holes 28 are used for forming a substrate integrated waveguide, one end of the substrate integrated waveguide 28 is short-circuited by a metal hole 29, metallized holes 30 in the dielectric substrate 3 are used for forming the dielectric integrated waveguide, and

rectangular gaps

31 and 32 are etched on the metal layer 27.

Fig. 6 is a top view of an intermediate substrate 4 according to an embodiment of the present invention. The upper surface of the fourth layer of dielectric substrate 4 is covered with a metal layer 33, metallized holes 34 and 35 in the dielectric substrate 4 are respectively used for forming a dielectric integrated waveguide and improving structural impedance matching, and

rectangular gaps

36 and 37 are etched on the metal layer 27.

Fig. 7 is a top view of an intermediate substrate 5 according to an embodiment of the present invention. The upper surface of the fifth dielectric substrate 5 is covered with a metal layer 38, metallized holes 39 in the dielectric substrate 5 are used for forming a dielectric integrated waveguide, and a rectangular gap 41 is etched on the metal layer 40.

Fig. 8 is a top view of an intermediate substrate 6 according to an embodiment of the present invention. The upper surface of the sixth layer of dielectric substrate 6 is covered with a metal layer 42, metallized holes 43 in the dielectric substrate 6 are used for forming a dielectric integrated waveguide, and a rectangular slot 44 is etched on the metal layer 42.

Fig. 9 is a top view of an intermediate substrate 7 according to an embodiment of the present invention. The upper surface of the seventh dielectric substrate 7 is covered with a metal layer 45, metallized holes 46 in the dielectric substrate 7 are used for forming a dielectric integrated waveguide, and square apertures 47 are etched in the metal layer 42.

Fig. 10 is a top view of an intermediate substrate 8 according to an embodiment of the present invention. The upper surface of the eighth dielectric substrate 8 is covered with a metal layer 49, the metallized holes 50 in the dielectric substrate 8 are used for forming a dielectric integrated waveguide, and square apertures 51 are etched in the metal layer 49. The metallized holes 48 in the dielectric substrate 7 and the metallized holes 52, 53 in the dielectric substrate 8 together form a polarization splitting diaphragm of a three-dimensional orthogonal mode coupler.

Fig. 11 is a top view of a dielectric substrate 9 according to an embodiment of the present invention. The upper surface of the ninth dielectric substrate 9 is covered with a metal layer 54, metallized holes 55 in the dielectric substrate 9 are used for forming a dielectric integrated waveguide, and square apertures 56 are etched on the metal layer 54.

Fig. 12 is a top view of a dielectric substrate 10 according to an embodiment of the present invention. The upper surface of the tenth dielectric substrate 10 is covered with a metal layer 57, metallized holes 58 in the dielectric substrate 10 are used for forming a dielectric integrated waveguide, and square apertures 59 are etched in the metal layer 57.

Fig. 13 is a top view of a dielectric substrate 11 according to an embodiment of the present invention. The upper surface of the eleventh dielectric substrate 11 is covered with a metal layer 60, the metallized holes 61 in the dielectric substrate 11 are used for forming a dielectric integrated waveguide, and square apertures 62 are etched in the metal layer 60.

Fig. 14 is a top view of a dielectric substrate 12 according to an embodiment of the present invention. The upper surface of the twelfth dielectric substrate 12 is covered with a metal layer 63, the metallized holes 64 in the dielectric substrate 12 are used for forming a dielectric integrated waveguide, and square slits 65 are etched in the metal layer 63.

Fig. 15 is a top view of an intermediate substrate 13 according to an embodiment of the present invention. The upper surface of the thirteenth dielectric substrate 13 is covered with a metal layer 66, metallized holes 67 in the dielectric substrate 13 are used for forming a dielectric integrated waveguide, and square apertures 68 are etched in the metal layer 66.

Fig. 16 is a top view of a dielectric substrate 14 according to an embodiment of the present invention. The upper surface of the fourteenth dielectric substrate 14 is covered with a metal layer 69, metallized holes 70 in the dielectric substrate 14 are used for forming a dielectric integrated waveguide, and square slits 71 are etched in the metal layer 69.

Fig. 17 is a top view of an intermediate substrate 15 according to an embodiment of the present invention. The upper surface of the fifteenth dielectric substrate 15 is covered with a metal layer 72, metallized holes 73 in the dielectric substrate 15 are used for forming a dielectric integrated waveguide, square apertures 74 are etched in the metal layer 72, and air holes 75 are etched in the dielectric substrate and used for converging antenna beams.

Fig. 18 is a top view of a dielectric substrate 16 according to an embodiment of the present invention. The upper surface of the sixteenth dielectric substrate 16 is covered with a metal layer 76, metallized holes 77 in the dielectric substrate 16 are used for forming a dielectric integrated waveguide, square apertures 78 are etched on the metal layer 76, and air holes 79 are etched on the dielectric substrate and used for converging antenna beams.

The invention realizes the dual-polarized pyramid horn antenna design of the three-dimensional orthogonal mode coupler feed based on the dielectric integrated waveguide in the Ka wave band. The dielectric substrate used to construct the design has a thickness of 0.762mm, a dielectric constant of 3.66, an air layer thickness of between 0-1mm, and a metal layer thickness of 0.035 mm.

As a specific embodiment, the size of the rectangular gap 22 etched in the metal layer 18 is 3.27mm by 0.4mm, the diameter of the metallized holes 20,21 in the dielectric substrate 1 is 0.4mm, and the hole pitch is 0.6 mm.

In one embodiment, the size of the rectangular slot 26 etched in the metal layer 23 is 3.3mm by 0.3mm, the gap between the two slots is 12mm, the diameter of the metallized hole 24 in the dielectric substrate 2 is 1.2mm, the aperture distance is 2mm, and the diameter of the metallized hole 25 is 0.2 mm.

In one embodiment, the size of the rectangular gap 31 etched in the metal layer 27 is 3.42mm by 0.4mm, the size of the rectangular gap 32 is 3.3mm by 0.6mm, the diameter of the metallized holes 28,29 in the dielectric substrate 3 is 0.4mm, the hole pitch is 0.6mm, the diameter of the metallized hole 30 is 1.2mm, and the hole pitch is 2 mm.

In one embodiment, the size of the rectangular gap 36 etched in the metal layer 33 is 3.3mm by 0.6mm, the size of the rectangular gap 37 is 3.3mm by 0.3mm, the diameter of the metallized hole 34 in the dielectric substrate 4 is 1.2mm, the hole pitch is 2mm, and the diameter of the metallized hole 35 is 0.2 mm.

As a specific embodiment, the size of the rectangular gap 41 etched in the metal layer 38 is 3.3mm by 0.6mm, the diameter of the metallized hole 39 in the dielectric substrate 5 is 1.2mm, and the hole pitch is 2 mm.

As a specific embodiment, the size of the rectangular gap 44 etched in the metal layer 42 is 3.3mm by 0.35mm, the diameter of the metallized hole 43 in the dielectric substrate 6 is 1.2mm, and the hole pitch is 2 mm.

As a specific embodiment, the square apertures 44 etched in the metal layer 45 are 3.3mm by 3.3mm in size, the metallized holes 46 in the dielectric substrate 7 are 1.2mm in diameter, the pitch of the apertures is 2mm, and the metallized holes 48 are 0.5mm in diameter.

In one embodiment, the square apertures 51 etched in the metal layer 49 are 3.3mm by 3.3mm, the diameter of the metallized holes 50 in the dielectric substrate 8 is 1.2mm, the pitch of the apertures is 2mm, the diameter of the metallized holes 52 is 0.6mm, and the diameter of the metallized holes 53 is 0.5 mm.

As a specific embodiment, the square apertures 56 etched in the metal layer 54 are 3.3mm by 3.3mm in size, and the metallized holes 55 in the dielectric substrate 9 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 59 etched in the metal layer 57 are 3.6mm by 3.6mm in size, and the metallized holes 55 in the dielectric substrate 10 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 62 etched in the metal layer 60 are 5.3mm by 5.3mm in size, and the metallized holes 55 in the dielectric substrate 11 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 65 etched in the metal layer 63 are 6mm by 6mm in size, and the metallized holes 55 in the dielectric substrate 12 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 68 etched in the metal layer 66 are 7.2mm by 7.2mm in size, and the metallized holes 55 in the dielectric substrate 13 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 71 etched in the metal layer 69 are 8mm by 8mm in size, and the metallized holes 55 in the dielectric substrate 14 are 1.2mm in diameter and 2mm apart.

As a specific embodiment, the square apertures 74 etched in the metal layer 72 have a size of 9.4mm by 9.4mm, the metallized holes 55 in the dielectric substrate 15 have a diameter of 1.2mm and a pitch of 2mm, and the air holes 75 in the dielectric substrate 15 have a diameter of 1.2mm and a pitch of 1.6 mm.

As a specific embodiment, the square apertures 78 etched in the metal layer 76 are 10.4mm by 10.4mm in size, the metallized holes 77 in the dielectric substrate 16 are 1.2mm in diameter and 2mm in aperture spacing, and the air holes 79 in the dielectric substrate 16 are 1.2mm in diameter and 1.5mm in aperture spacing.

The electric field distribution in the three-dimensional orthogonal mode coupler based on the dielectric integrated waveguide is shown in fig. 19, and it can be seen from the electric field distribution that the antenna structure design can effectively excite two orthogonal transmission modes at the same output port.

The result of the S parameter of the designed antenna structure is shown in fig. 20, and it can be seen that | S is within the operating frequency band₁₁I and I S₂₂And | is lower than-10 dB, and the isolation is lower than-50 dB.

In summary, compared with the prior art, the three-dimensional substrate integrated antenna of the embodiment of the present invention has the following advantages:

1. can realize the horizontal and vertical transmission of electromagnetic energy in the multi-layer medium substrate;

2. the substrate integration of the three-dimensional structure can be realized, and the excellent performance of the three-dimensional structure is ensured;

3. the structure is compact, and the integration level is high;

4. the machining is easy to realize, the requirement on machining precision is low, and meanwhile, the energy is prevented from being leaked;

5. has good transmission bandwidth and low loss characteristics.

Those of ordinary skill in the art will understand that: the figures are merely schematic representations of one embodiment, and the blocks or flow diagrams in the figures are not necessarily required to practice the present invention.

The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for apparatus or system embodiments, since they are substantially similar to method embodiments, they are described in relative terms, as long as they are described in partial descriptions of method embodiments. The above-described embodiments of the apparatus and system are merely illustrative, and the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.

Those of ordinary skill in the art will understand that: the components in the devices in the embodiments may be distributed in the devices in the embodiments according to the description of the embodiments, or may be correspondingly changed in one or more devices different from the embodiments. The components of the above embodiments may be combined into one component, or may be further divided into a plurality of sub-components.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A three-dimensional substrate integrated antenna based on multilayer laminated dielectric integrated waveguide is characterized by comprising:

2. The antenna according to claim 1, wherein the antenna comprises 16 layers of dielectric substrates, wherein the dielectric substrates 1-9 of the layers 1-9 from bottom to top are used for forming a three-dimensional orthogonal mode coupler, and the dielectric substrates 10-16 of the layers 10-16 are used for forming a dual-polarized pyramid horn antenna.

3. The antenna of claim 1, wherein the metallized holes 20,21, 24, 25, 30, the metal layers 1, 18, 23,27 and the apertures 22,26,32 in the dielectric substrate of layers 1-3 together form an E-plane power divider in the orthomode coupler; the metallized holes 28,29,34, 35, 39, the metal layers 19,27, 33,38 and the apertures 31,37,41 in the dielectric substrates of layers 3-5 together form an E-plane power divider orthogonal to the aforementioned power divider.

4. The antenna of claim 1, wherein the metallized hole 25 in the dielectric substrate of layer 2 and the metallized hole 35 in the dielectric substrate of layer 4 are used to achieve impedance matching of two orthogonal E-plane power splitters within a wide band.

5. The antenna of claim 1, wherein the metallized holes 48 in the dielectric substrate of layer 7 and the metallized holes 52, 53 in the dielectric substrate of layer 8 together form a polarization splitting film in the three-dimensional orthogonal mode coupler for combining and splitting two orthogonally polarized waves at a common port, thereby ensuring high isolation of orthogonal mode coupler from orthogonal polarized waves and impedance matching.

6. The antenna of claim 1, wherein the antenna is a dual polarized horn antenna fed by an orthogonal mode coupler.

7. The antenna of claim 1, wherein air holes for focusing the antenna beam are etched in the dielectric substrate of the topmost and the next-to-topmost layers.

8. The antenna of claim 1, wherein the dielectric substrate has a thickness of 0.762mm, a dielectric constant of 3.66, the air layer has a thickness of 0-1mm, and the metal layer has a thickness of 0.035 mm.

9. The antenna of claim 1, wherein the electromagnetic energy is transmitted vertically and horizontally through a closing mechanism defined by the slits in the metal layer and the metallized through holes.

10. The antenna of claim 7, wherein the rectangular slot 22 etched in the metal layer on the dielectric substrate of layer 1 has a dimension of 3.27mm by 0.4mm, the metallized hole in the dielectric substrate of layer 1 has a diameter of 0.4mm, and the pitch of the holes is 0.6 mm;