CN105932379A - SIW (substrate integrated waveguide) filter with ports on different planes - Google Patents
SIW (substrate integrated waveguide) filter with ports on different planes Download PDFInfo
- Publication number
- CN105932379A CN105932379A CN201610436304.1A CN201610436304A CN105932379A CN 105932379 A CN105932379 A CN 105932379A CN 201610436304 A CN201610436304 A CN 201610436304A CN 105932379 A CN105932379 A CN 105932379A
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- Prior art keywords
- port
- out wire
- layer
- metal printing
- wave filter
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
Abstract
The invention discloses an SIW (substrate integrated waveguide) filter with ports on different planes, and aims to provide the SIW filter with ports on different planes, wherein the provided SIW filter is low in signal transmission loss, capable of conveniently realizing signal transmission between an upper layer and a lower layer directly through microstrip lead-out wires of double-end ports on different planes, and capable of realizing three-dimensional integration conveniently. The SIW filter is realized by the technical scheme as follows: metalized via holes penetrate through a dielectric substrate layer, a first metal printing layer (1) and a second metal printing layer (2) and are connected with the first metal printing layer (1) and the second metal printing layer (2) through mutually-parallel linear arrays and rectangular dot matrixes which are symmetrically arranged on the two sides of the inner sides of the mutually-parallel linear arrays at intervals; the input/output end and the resonant cavity structure of the dielectric substrate layer are arranged on different planes; the microstrip lead-out wires of the double-end ports are positioned on two ends of two different planes of the dielectric substrate layer; opposite and symmetric inward horn-mouth gradually-changed lines are formed by a first surface port microstrip lead-out wire (4) and a second surface port microstrip lead-out wire (5); and the connecting lines at the large end of the horn mouth are connected with the ports of the parallel linear arrays respectively.
Description
Technical field
The present invention relates to substrate integration wave-guide (Substrate Integrated Waveguide, the SIW) filter of a kind of port antarafacial
Ripple device.
Background technology
Wave filter as a kind of indispensable important passive device in all kinds of microwaves, millimetre-wave radar, communication system,
Often the performance on system plays conclusive impact.Owing to SIW wave filter not only has, Insertion Loss is little, power capacity is high, body
Long-pending little, the Inherent advantage of the wave guide resonance cavity filter such as quality factor are high, be easily integrated, have simultaneously microstrip filter size little,
Lightweight, low cost, the advantage such as it is easily integrated, is widely used in microwave, millimetre-wave radar, communication system.In recent years
Along with radar, the fast development of satellite fields, to high-power, the miniaturization of device, integrated have higher requirement.
SIW is as the novel advanced transmission waveguide structure of the one proposed in recent years, the advantage combining microstrip line and guide technology.This knot
Structure realizes class waveguiding structure with the side metal plate of the parallel periodicity plated-through hole substitute medium waveguiding structure of two rows.Based on micro-
Wave resonator is theoretical, and wave filter can pass through substrate integration wave-guide resonator, i.e. substitutes with the periodicity metal throuth hole being parallel to each other and is situated between
The metal plate structure of matter wave guide resonance cavity configuration surrounding realizes.Variously-shaped such as square, circle, the integrated ripple of substrate of triangle
Lead cavity resonator structure to have been carried out；Different technologies such as cross-coupling technique, half module technology or two-film technique etc. realize filter transfer
The theory of zero point reaches its maturity.
Traditional SIW wave filter mostly is single layer structure, and its input/output port is respectively positioned in approximately the same plane.Along with constantly
To all kinds of microwaves, millimetre-wave radar, communication system miniaturization requirement, sorts of systems from Planar integration to three-dimensionally integrated
Direction is developed.In three-dimensionally integrated encapsulation, an important problem is exactly to need signal in the mutual transmission of different interlayers.At present,
Common three-dimensionally integrated radio system is through being mixed, amplifying, after filtering etc. processes, and signal to be realized is at upper and lower two interlayers of difference
Signal transmits, it is necessary to arrange such as silicon through hole (Through Silicon Via, TSV) structure or employing spun gold key at interlayer
The modes such as conjunction realize.Input/output port is arranged at conplane filter construction and is integrated in three-dimension packaging system and realizes not
Transmit with the signal of interlayer, outside wave filter or other device, additionally can only increase interlayer interconnection architecture, so make structure become
Complexity, volume, weight, cost all accordingly increase, and too increase the loss of signal transmission so that with layer input and output simultaneously
The use in three-dimension packaging is integrated of the SIW wave filter of port organization is greatly limited.
Summary of the invention
It is an object of the invention to the weak point existed for prior art, it is provided that a kind of simple in construction, volume are little, weight
Gently, low cost, signal transmission attenuation is little, can the most directly be drawn by the both-end antarafacial port microstrip of SIW wave filter
Line realizes the signal transmission of upper and lower two interlayers, it is not necessary to the extra TSV increasing vertical transition or gold wire bonding etc. carry out interlayer
Transition, it is simple to carry out three-dimensionally integrated antarafacial port substrate integral wave guide filter.
SIW wave filter input/output port is arranged on a kind of antarafacial port SIW wave filter of Different Plane.
Above-mentioned purpose of the present invention can be achieved by following technical proposals: a kind of antarafacial port SIW wave filter, including
One the first metal printing brush layer 1 being positioned at medium substrate layer 2 upper surface and the second metal printing brush layer 3, first being positioned at lower surface
Surface port microstrip lead-out wire 4 and second surface port microstrip lead-out wire 5 and the via 6 that metallizes, it is characterised in that metallization
Via 6 with the linear array band that is parallel to each other and symmetrical be spaced at described in be parallel to each other the rectangular lattice on both sides inside linear array band,
Through medium substrate layer the 2, first metal printing brush layer 1 and the second metal printing brush layer 3, and with first, second metal printing brush layer phase
Connect；Input/output terminal and medium substrate layer 2 resonant cavity structure antarafacial, both-end antarafacial port microstrip lead-out wire is positioned at medium
The two ends of 2 two Different Plane of substrate layer, first surface port microstrip lead-out wire 4 and second surface port microstrip lead-out wire 5 shape
Becoming interior shape line horn mouth transition line symmetrical in opposite directions, horn mouth big end line connects the port of parallel linear array respectively.
The present invention has the advantages that compared to prior art
Simple in construction, volume are little, lightweight, low cost, and signal transmission attenuation is little.The present invention is with between the linear array being parallel to each other and symmetry
The rectangular lattice on both sides inside the linear array that is parallel to each other described in being arranged in, is distributed in the first metal printing brush layer 1 and the second operplate printing
On the upper and lower surface of layer 3, input/output terminal and medium substrate layer 2 resonant cavity structure antarafacial, both-end antarafacial port microstrip
Lead-out wire is positioned at the two ends of 2 two Different Plane of medium substrate layer, can directly be realized by both-end antarafacial port microstrip lead-out wire
Signal transmission between different layers up and down so that such SIW wave filter can well be applicable to multi-layer three-dimension stacked package, no
The extra TSV increasing vertical transition or gold wire bonding etc. is needed to carry out layer to layer transition, it is simple to carry out three-dimensionally integrated, decrease
Extra signal interlayer transition structure；Can effectively reduce encapsulation volume, the loss of energy and reduce cost.Solve existing
There is technology input/output port to be placed in conplane filter construction, be integrated in three-dimension packaging system the letter realizing different interlayers
Number transmission, outside wave filter or other device, additionally can only increase interlayer interconnection architecture, make structure become complexity, volume, weight,
Cost increases, the defect that the loss of signal transmission strengthens, and overcomes prior art and makes the SIW of same layer input/output terminal mouth structure
Wave filter use in three-dimension packaging is integrated limits, and well solves the layer to layer transition of a kind of signal.
Accompanying drawing explanation
Below by specific embodiment and combine accompanying drawing the present invention is described in further detail.
Fig. 1 is antarafacial port SIW wave filter top view of the present invention.
Fig. 2 is the upward view of Fig. 1.
Fig. 3 is the S parameter emulation schematic diagram of antarafacial port SIW wave filter of the present invention.
In figure: 1 first metal printing brush layer, 2 medium substrate layers, 3 second metal printing brush layers, 4 first surface port microstrips
Lead-out wire, 5 second surface port microstrip lead-out wires, 6 metallization vias.
Detailed description of the invention
Refering to Fig. 1, Fig. 2.In embodiment described below, a kind of antarafacial port SIW wave filter includes, one is positioned at
First metal printing brush layer 1 of medium substrate layer 2 upper surface and be positioned at the second metal printing brush layer 3 of lower surface, first surface port
Micro-strip lead-out wire 4 and second surface port microstrip lead-out wire 5 and the via 6 that metallizes.Metallization via 6 is with the line being parallel to each other
Battle array band and symmetrical be spaced at described in be parallel to each other the rectangular lattice on both sides inside linear array band, through medium substrate layer 2,
First metal printing brush layer 1 and the second metal printing brush layer 3, and be connected with first, second metal printing brush layer；Input/output terminal and Jie
Matter substrate layer 2 resonant cavity structure antarafacial, both-end antarafacial port microstrip lead-out wire is positioned at 2 two Different Plane of medium substrate layer
Two ends, first surface port microstrip lead-out wire 4 and second surface port microstrip lead-out wire 5 form interior shape line loudspeaker symmetrical in opposite directions
Mouth transition line, horn mouth big end line connects the port of parallel linear array respectively.Described port microstrip lead-out wire is positioned at two differences
Plane, upper and lower surface metal printing brush layer is rectangle.
Described first surface port microstrip lead-out wire 4 and the microstrip line that second surface port microstrip lead-out wire 5 is 50 ohm.
Described first surface port microstrip lead-out wire 4 and second surface port microstrip lead-out wire 5 are trapezoidal microstrip line and square
The combination of microstrip line.
Described first surface port microstrip lead-out wire 4 and second surface port microstrip lead-out wire 5 are positioned on same axis direction,
Different axis directions can also be positioned at.
The metallization via 6 of described SIW wave filter is circular, and through upper surface metal printing brush layer 1, medium substrate
Layer 2 and lower surface metal printing layer 3, do in hole metalized and with upper surface the first metal printing brush layer 1 and lower surface second
Metal printing brush layer 3 is connected.
The size and dimension of described SIW filter medium substrate resonator can be adjusted according to actual needs.
Using medium substrate FERR0A6M, the relative dielectric constant of medium substrate is 5.9, and loss angle tangent is 0.002,
Substrate thickness 0.254mm；The upper and lower surface of substrate all covers metallic copper, and the thickness of metal-clad is 0.018mm.Whole
The a length of 24.3mm of wave filter, width is 4mm；The front and back structure of wave filter is concrete a size of: micro-strip lead-out wire
Width w0=0.37mm, micro-strip length of lead-out wire L0=1mm, the long lt=0.95mm of isosceles trapezoid microstrip line waist, L1=2.83
Mm, L2=2.61mm, L3=3.01mm, L4=3.08mm, wt=0.95mm, w1=1.65mm, w2=1.54mm,
W3=1.51mm, adjacent metal via center distance s=0.4mm, metallize via diameter d=0.2mm.
Claims (8)
1. an antarafacial port SIW wave filter, including a first metal printing brush layer (1) being positioned at medium substrate layer (2) upper surface
Be positioned at the second metal printing brush layer (3) of lower surface, first surface port microstrip lead-out wire (4), second surface port microstrip draw
Outlet (5) and metallization via (6), it is characterised in that metallization via (6) is with the linear array band being parallel to each other and symmetry
The rectangular lattice on both sides inside the linear array that is parallel to each other described in being spaced at band, through medium substrate layer (2), the first metal
Printing layer (1) and the second metal printing brush layer (3), and be connected with first, second metal printing brush layer；Input/output terminal and medium
Substrate layer (2) resonant cavity structure antarafacial, both-end antarafacial port microstrip lead-out wire is positioned at (2) two difference of medium substrate layer puts down
The two ends in face, first surface port microstrip lead-out wire (4) and second surface port microstrip lead-out wire (5) are formed symmetrical in opposite directions
Interior shape line horn mouth transition line, horn mouth big end line connects the port of parallel linear array respectively.
2. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: described first surface port microstrip lead-out wire
And microstrip line that second surface port microstrip lead-out wire (5) is 50 ohm (4).
3. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: first surface port microstrip lead-out wire (4)
It is trapezoidal microstrip line and the combination of square microstrip line with second surface port microstrip lead-out wire (5).
4. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: first surface port microstrip lead-out wire (4)
It is positioned at same axis direction with second surface port microstrip lead-out wire (5) or is positioned at different axis directions.
5. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: the metallization via (6) of SIW wave filter
For circle, and through upper surface the first metal printing brush layer (1), medium substrate layer (2) and lower surface the second metal printing brush layer
(3), do in hole metalized and with upper surface the first metal printing brush layer (1) and lower surface the second metal printing brush layer (3) phase
Connect.
6. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: the size and dimension of medium substrate resonator
Can be adjusted according to actual needs.
7. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: the relative dielectric constant of medium substrate is 5.9,
Loss angle tangent is 0.002, substrate thickness 0.254mm.
8. antarafacial port SIW wave filter as claimed in claim 1, it is characterised in that: a length of 24.3mm of whole wave filter,
Width is 4mm；The front and back structure of wave filter is concrete a size of: micro-strip lead-out wire width w0=0.37mm, micro-strip is drawn
Go out line length L0=1mm, isosceles trapezoid microstrip line waist long lt=0.95mm, L1=2.83mm, L2=2.61mm,
L3=3.01mm, L4=3.08mm, wt=0.95mm, w1=1.65mm, w2=1.54mm, w3=1.51mm, adjacent gold
Genusization via center distance s=0.4mm, metallize via diameter d=0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610436304.1A CN105932379A (en) | 2016-06-17 | 2016-06-17 | SIW (substrate integrated waveguide) filter with ports on different planes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610436304.1A CN105932379A (en) | 2016-06-17 | 2016-06-17 | SIW (substrate integrated waveguide) filter with ports on different planes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105932379A true CN105932379A (en) | 2016-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610436304.1A Pending CN105932379A (en) | 2016-06-17 | 2016-06-17 | SIW (substrate integrated waveguide) filter with ports on different planes |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987860A (en) * | 2018-09-03 | 2018-12-11 | 南京林业大学 | A kind of SIW flat filter |
| CN109742494A (en) * | 2018-12-13 | 2019-05-10 | 中国电子科技集团公司第五十五研究所 | A kind of single layer surface-mount type millimeter wave filter |
| US10749237B2 (en) | 2018-07-31 | 2020-08-18 | Semiconductor Components Industries, Llc | Substrate integrated waveguide and method for manufacturing the same |
| EP3560026A4 (en) * | 2016-12-21 | 2020-08-19 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
| CN112164847A (en) * | 2020-09-10 | 2021-01-01 | 武汉凡谷电子技术股份有限公司 | Millimeter wave filter |
| CN116207464A (en) * | 2023-04-23 | 2023-06-02 | 南通至晟微电子技术有限公司 | Dual-mode substrate integrated waveguide resonator |
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| CN2796131Y (en) * | 2005-05-30 | 2006-07-12 | 东南大学 | Multilayer substrate integrated wave guide elliptical response filter |
| CN200956399Y (en) * | 2006-09-22 | 2007-10-03 | 东南大学 | Substrate integrated waveguide quasi-inductive window filter |
| US20090243762A1 (en) * | 2008-03-27 | 2009-10-01 | Xiao-Ping Chen | Waveguide filter |
| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
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Patent Citations (4)
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| CN2796131Y (en) * | 2005-05-30 | 2006-07-12 | 东南大学 | Multilayer substrate integrated wave guide elliptical response filter |
| CN200956399Y (en) * | 2006-09-22 | 2007-10-03 | 东南大学 | Substrate integrated waveguide quasi-inductive window filter |
| US20090243762A1 (en) * | 2008-03-27 | 2009-10-01 | Xiao-Ping Chen | Waveguide filter |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3560026A4 (en) * | 2016-12-21 | 2020-08-19 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
| US10749237B2 (en) | 2018-07-31 | 2020-08-18 | Semiconductor Components Industries, Llc | Substrate integrated waveguide and method for manufacturing the same |
| US11276910B2 (en) | 2018-07-31 | 2022-03-15 | Semiconductor Components Industries, Llc | Substrate integrated waveguide and method for manufacturing the same |
| CN108987860A (en) * | 2018-09-03 | 2018-12-11 | 南京林业大学 | A kind of SIW flat filter |
| CN108987860B (en) * | 2018-09-03 | 2023-11-24 | 南京林业大学 | SIW plane filter |
| CN109742494A (en) * | 2018-12-13 | 2019-05-10 | 中国电子科技集团公司第五十五研究所 | A kind of single layer surface-mount type millimeter wave filter |
| CN109742494B (en) * | 2018-12-13 | 2024-04-05 | 中国电子科技集团公司第五十五研究所 | Single-layer surface-mounted millimeter wave filter |
| CN112164847A (en) * | 2020-09-10 | 2021-01-01 | 武汉凡谷电子技术股份有限公司 | Millimeter wave filter |
| CN112164847B (en) * | 2020-09-10 | 2021-08-17 | 武汉凡谷电子技术股份有限公司 | Millimeter wave filter |
| CN116207464A (en) * | 2023-04-23 | 2023-06-02 | 南通至晟微电子技术有限公司 | Dual-mode substrate integrated waveguide resonator |
| CN116207464B (en) * | 2023-04-23 | 2023-10-31 | 南通至晟微电子技术有限公司 | Dual-mode substrate integrated waveguide resonator |
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