CN108172564A - A kind of millimeter wave antenna and the three-dimensionally integrated encapsulation of silicon-based devices - Google Patents
A kind of millimeter wave antenna and the three-dimensionally integrated encapsulation of silicon-based devices Download PDFInfo
- Publication number
- CN108172564A CN108172564A CN201711413356.8A CN201711413356A CN108172564A CN 108172564 A CN108172564 A CN 108172564A CN 201711413356 A CN201711413356 A CN 201711413356A CN 108172564 A CN108172564 A CN 108172564A
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- millimeter wave
- silicon
- tsv
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- based devices
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
Abstract
The invention discloses one kind based on millimeter wave antenna and the three-dimensionally integrated encapsulation of silicon substrate multichannel component, the microstrip patch antenna array including top layer radiation, the high resistivity silicon substrate with TSV feed structures, medium wiring layer, the peripheral frame with TSV three-dimensional perpendicular transmission structures and the air-tight packaging cover board with TSV transmission structures with microwave cabling and digital cabling.Microstrip patch antenna array, microwave chip, digit chip and passive device are integrated in by MEMS technology in same module by the present invention simultaneously, the middle section of peripheral frame carries the TSV structure of microwave signal vertical transfer, integrated level is higher, microwave property is excellent, it can be achieved that component multifunction and miniaturization.
Description
Technical field
The present invention relates to millimeter wave antennas and silicon substrate multichannel component three-dimensional integration technology, and in particular to a kind of millimeter wave day
Line and the three-dimensionally integrated encapsulation of silicon-based devices.
Background technology
The direction of the trend of radio frequency component towards miniaturization, lightness, array, low-power consumption is developed at present.Traditional penetrates
Frequency component is using LTCC+ microwave assembly technologies, pcb board technique+microwave assembly technology, and chip chamber is interconnected by spun gold plane, using pipe
Shell air-tight packaging.With the rise of MEMS technology, the mentality of designing of radio frequency component starts to be considered as Si substrates replacement tradition
Microwave medium ceramic substrate and pcb board, the characteristics of this MEMS technology is that volume and quality greatly reduce, craft precision compared with
Height, microwave signal Insertion Loss is small, delay is short.
Traditional antenna is integrated with component using metallic carrier+pcb board technique, and volume is larger, can not realize active phase
The demand that battle array radar minimizes radio-frequency front-end.It is micro- in millimeter wave field since the size of antenna is related with the wavelength of electromagnetic wave
Size with paster antenna can be comparable with transmitting-receiving subassembly.It can be in the single-layer double-side of high resistivity silicon substrate by TSV technology
Antenna integrated simultaneously and MMIC (millimeter wave monolithic integrated circuit) circuit.The three-dimensionally integrated design of millimeter wave antenna and silicon-based devices
Technology will be following 10 years main market innovation driving forces, play subversiveness to millimeter wave transceiving component market.
From the foregoing, it will be observed that the prior art has the following problems：It can realize the antenna of millimeter wave working frequency and the radio frequency of component
Front-end module volume is more larger, and lossy microwave is serious and packaged type falls behind, it is impossible to meet miniaturization and the requirement of low cost.
Invention content
The purpose of the present invention is to provide a kind of millimeter wave antennas and the three-dimensionally integrated encapsulation of silicon-based devices.
Realize the object of the invention technical solution be：A kind of millimeter wave antenna and the three-dimensionally integrated encapsulation of silicon-based devices, including
Radiating layer, silicon substrate, medium wiring layer, peripheral frame and the cover board from top to bottom set gradually；
Radiating layer is N × N millimeter wave microstrip patch antenna arrays, and N >=2, aerial array underface passes through laser ablation shape
Into cavity, and fill BCB；
Silicon substrate is internally provided with TSV feeding networks, and TSV one end is connect with microwave signal delivery outlet, the other end and antenna
Array connects；
Setting medium wiring layer below silicon substrate, medium wiring layer use BCB, and including three layers of cabling, lower surface is microwave
Chip list paste layer, middle layer are digital signal and direct current signal routing layer, and upper strata is ground plane；
Peripheral frame is provided with vertical TSV and the cavity for placing medium wiring layer lower surface microwave chip, medium wiring layer
Lower surface input port is interconnected by the RDL wiring layers of the vertical TSV in peripheral frame and cover board, realizes that the three-dimensional perpendicular of microwave signal passes
It is defeated；The input port of entire millimeter wave antenna and silicon-based devices interconnects on the RDL wiring layers of bottom cover plate with external interface.
Further, the depth-to-width ratio of TSV is 10: 1 inside silicon substrate, fills Ni metal.
Further, top layer antenna and cover board bottom is graphical gold-plated, remaining four outer surface of component all carry out whole face
Metalized.
Further, medium wiring layer lower surface sets 50 Ω microwave transmission lines.
Further, microwave signal through-hole is bypass structure in three layers of medium wiring, is arranged on top layer, middle layer and bottom
Layer；Number and direct current signal through-hole are shift type structure, are arranged on middle layer and lower floor.
Further, peripheral frame inner surface is all gold-plated, is bonded with bottom cover plate.
Further, the external interface of cover board bottom surface includes microwave interface, digital interface and power interface.
Further, the two-sided transmission line of cover board is microstrip line or coplanar waveguide ground, is transmitted and connected by TSV.
Compared with prior art, the present invention its remarkable advantage is：
(1) present invention is using individual layer high resistivity silicon double-side technology, and the integrated microstrip patch antenna array in front, the back side integrates
MMIC circuits；(2) present invention realizes that antenna is fed by TSV, can be operated in Ka wave bands；(3) middle section of peripheral frame of the present invention
TSV structure with microwave signal vertical transfer；(4) pass through low temperature between high resistivity silicon substrate of the present invention, peripheral frame and cover board
Wafer level bonding can reach electronic shield and air-tightness requirement；(5) cover board tow sides of the present invention have wiring layer and to external port；
Microstrip patch antenna array, microwave chip, digit chip and passive device are integrated in together by the present invention by MEMS technology simultaneously
In one module, integrated level is higher.
The present invention is described in further detail below in conjunction with the accompanying drawings.
Description of the drawings
Fig. 1 is the millimeter wave silicon substrate antenna of the present invention and the three-dimensionally integrated encapsulation sectional view of component.
Fig. 2 is the millimeter wave silicon substrate antenna of the present invention and the three-dimensionally integrated encapsulation general shape figure of component.
Specific embodiment
With reference to Fig. 1, Fig. 2, a kind of millimeter wave antenna of the invention and the three-dimensionally integrated encapsulation of silicon-based devices, including from top to bottom
The radiating layer 1 that sets gradually, the silicon substrate 2 with TSV feeding networks have millimeter-wave signal transmission and digital data transmission work(
Medium wiring layer 3, the peripheral frame 4 with TSV three-dimensional perpendicular transmission structures and the bottom for being electromagnetically shielded, sealing and reroute of energy
Layer cover board 5；
Radiating layer 1 is N × N millimeter wave microstrip patch antenna arrays, and N >=2, aerial array underface passes through laser ablation shape
Into cavity, and BCB is filled, effectively reduce the effective dielectric constant of high resistivity silicon substrate, widen the bandwidth of antenna and carried
High-gain, the transmission network network layers of antenna are interconnected by the microwave signal delivery outlet of TSV and component.Emit day by adjusting single channel
Phase, the amplitude of line can realize miniaturization phased array function.
High resistivity silicon substrate with TSV feeding networks, it is two-sided all to carry out CMP planarization processing, high aspect ratio structure
TSV fills Cu.The TSV (silicon hole) is the key component that component is fed to antenna.
Multilayer wiring medium with millimeter-wave signal transmission and digital signal transfer functions, using BCB.It is walked including three layers
Line, lower surface are microwave chip Surface Mount layer, set 50 Ω microwave transmission lines of standard, and middle layer is digital signal and direct current signal
Routing layer, upper strata are ground plane, both for top layer aerial radiation with improving the back side, also provide co-planar waveguide for lower surface microwave chip
Ground.
The microwave transmission line includes the planar transmission lines such as microstrip line, coplanar waveguide ground.
Gold-plated processing is done on the TSV peripheral frames surface of millimeter-wave signal three-dimensional perpendicular transmission, and middle wall body part is believed for millimeter wave
The TSV of number vertical transfer, is bonded together by low-temperature wafer-level bonding technology and high resistivity silicon substrate.
The key component that the TSV of the vertical transfer is millimeter-wave signal and digital signal inputs；
Bottom is used for the two-sided graphical treatment of cover board that is electromagnetically shielded, seals and reroutes, front have RDL reroute layer with
External interface, centre are useful for the TSV through hole of signal input and heat dissipation.By low-temperature wafer-level bonding technology and silicon substrate and enclose
Frame is bonded together.
With reference to specific embodiment, the present invention will be further described.
Embodiment
As shown in Figure 1 and Figure 2, the three-dimensionally integrated encapsulation of a kind of novel millimeter wave antenna and silicon substrate multichannel component.It is designed
Framework includes microstrip patch antenna array, high resistivity silicon substrate, the BCB media of large scale multilayer wiring, enclosing with TSV structure
Frame and two-sided patterned cover board.
Millimeter wave microstrip patch antenna array is formed by 2 × 2 high bandwidths, the radiating element group battle array of high-gain, feed end
It is connected respectively with the single channel output terminal of component by the TSV of four three-dimensional perpendicular transmission.By optimize novel radiation unit three
Structure and feeding network are tieed up, realizes the high-gain and high bandwidth of millimeter wave array antenna.The depth of TSV inside high resistivity silicon substrate
Wide ratio is 10: 1, fills Ni metal.The medium of high resistivity silicon substrate bottom surface carries out microwave signal and digital signal using BCB
Isolation, while bcb film can reduce the stress problem that large scale deielectric-coating is brought.Be integrated with below BCB dielectric layers MMIC circuits,
Digital circuit, IPD, inductance, inductance and resistance interconnect every layer of cabling by medium through hole among BCB dielectric layers, through-hole knot
Structure is divided into through-type and dislocation type.Realize all kinds of chips with microstrip patch antenna array in individual layer high resistivity by MEMS technology
The two-sided of silicon substrate integrates.
Component package uses high resistivity silicon material, and the high resistivity silicon disc of TSV structure is carried by laser ablation
Into window frame structure, TSV figures are protected with glue, remaining all metallizes.Pass through low-temperature wafer-level bonding and high resistivity silicon substrate
Plate is bonded together.Component cover board is equally using high resistivity silicon material, at the two-sided figure of silicon wafer to carrying TSV structure
Reason, is finally bonded together with peripheral frame, high resistant silicon substrate, forms miniaturization, multi-functional phased array element.
Claims (8)
1. a kind of millimeter wave antenna and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that including what is from top to bottom set gradually
Radiating layer (1), silicon substrate (2), medium wiring layer (3), peripheral frame (4) and cover board (5)；
Radiating layer (1) is N × N millimeter wave microstrips patch antenna array (1), and N >=2, aerial array underface passes through laser ablation
Cavity is formed, and fills BCB；
Silicon substrate (2) is internally provided with TSV feeding networks, and TSV one end is connect with microwave signal delivery outlet, the other end and antenna array
Row connection；
Setting medium wiring layer (3) below silicon substrate (2), medium wiring layer uses BCB, and including three layers of cabling, lower surface is micro-
Wave chip list paste layer, middle layer are digital signal and direct current signal routing layer, and upper strata is ground plane；
Peripheral frame (4) is provided with vertical TSV and the cavity for placing medium wiring layer lower surface microwave chip, medium wiring layer
(3) lower surface input port is interconnected by the RDL wiring layers of the vertical TSV in peripheral frame (4) and cover board (5), realizes microwave signal
Three-dimensional perpendicular is transmitted；The input port of entire millimeter wave antenna and silicon-based devices is on the RDL wiring layers of cover board (5), with outside
Interface interconnects.
2. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that in silicon substrate
The depth-to-width ratio of portion TSV is 10：1, fill Ni metal.
3. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that top layer antenna
Graphical gold-plated with cover board bottom, remaining four outer surface of component all carry out whole face metalized.
4. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that medium connects up
Layer (3) lower surface sets 50 Ω microwave transmission lines.
5. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that three layers of medium
Microwave signal through-hole is bypass structure in wiring, is arranged on top layer, middle layer and bottom；Number and direct current signal through-hole is are staggered
Type structure, is arranged on middle layer and lower floor.
6. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that peripheral frame (4)
Inner surface is all gold-plated, is bonded with bottom cover plate (5).
7. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that cover board (5)
The external interface of bottom surface includes microwave interface, digital interface and power interface.
8. millimeter wave antenna according to claim 1 and the three-dimensionally integrated encapsulation of silicon-based devices, which is characterized in that cover board (5)
Two-sided transmission line is microstrip line or coplanar waveguide ground, is transmitted and connected by TSV.
Priority Applications (1)
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|---|---|---|---|
| CN201711413356.8A CN108172564B (en) | 2017-12-24 | 2017-12-24 | Three-dimensional integrated package of millimeter wave antenna and silicon-based component |
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|---|---|---|---|
| CN201711413356.8A CN108172564B (en) | 2017-12-24 | 2017-12-24 | Three-dimensional integrated package of millimeter wave antenna and silicon-based component |
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| CN108172564A true CN108172564A (en) | 2018-06-15 |
| CN108172564B CN108172564B (en) | 2020-01-03 |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216938A (en) * | 2018-10-17 | 2019-01-15 | 成都瑞迪威科技有限公司 | A kind of low section miniaturization phased array antenna |
| CN109346821A (en) * | 2018-09-19 | 2019-02-15 | 中国科学院上海微系统与信息技术研究所 | Wafer level silicon substrate integration of compact fractal antenna and preparation method thereof |
| CN109546278A (en) * | 2018-10-25 | 2019-03-29 | 西安电子科技大学 | A kind of three-dimensional coupler and preparation method thereof based on through silicon via |
| CN109921199A (en) * | 2019-03-05 | 2019-06-21 | 成都雷电微力科技有限公司 | A kind of airproof T/R module of double bamboo plywood transceiving chip |
| CN110518005A (en) * | 2019-07-19 | 2019-11-29 | 上海交通大学 | The cascaded modulator and RF IC isomery of optical analog to digital conversion chip encapsulate |
| CN110620107A (en) * | 2019-09-23 | 2019-12-27 | 苏州福唐智能科技有限公司 | RF radio frequency device and manufacturing method thereof |
| CN111276787A (en) * | 2019-12-31 | 2020-06-12 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated millimeter wave AiP phased array element |
| CN111308462A (en) * | 2019-12-19 | 2020-06-19 | 中国电子科技集团公司第五十五研究所 | Millimeter wave detection and communication integrated phased array system |
| CN111362227A (en) * | 2018-12-25 | 2020-07-03 | 无锡华润矽科微电子有限公司 | MEMS sensor packaging structure |
| CN111834344A (en) * | 2020-06-11 | 2020-10-27 | 西安电子科技大学 | Low-electromagnetic-loss silicon-based gallium nitride microwave millimeter wave transmission line and preparation method thereof |
| CN112051551A (en) * | 2020-09-10 | 2020-12-08 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active subarray |
| CN112436242A (en) * | 2020-10-26 | 2021-03-02 | 中国电子科技集团公司第十三研究所 | High integrated microwave assembly |
| CN112531339A (en) * | 2020-12-11 | 2021-03-19 | 安徽大学 | Millimeter wave broadband packaged antenna based on Fan-out packaging technology |
| CN112615120A (en) * | 2020-12-07 | 2021-04-06 | 中国电子科技集团公司第五十五研究所 | Ultra-wideband coplanar waveguide transmission line based on silicon-based three-dimensional integration technology |
| CN113437500A (en) * | 2021-06-03 | 2021-09-24 | 中国电子科技集团公司第三十八研究所 | Three-dimensional SRRs-based metamaterial microstrip antenna and manufacturing method thereof |
| US11362045B2 (en) | 2019-12-17 | 2022-06-14 | Industrial Technology Research Institute | Chip package structure |
| CN114784485A (en) * | 2022-04-19 | 2022-07-22 | 南京濠暻通讯科技有限公司 | Millimeter wave dual-polarization packaging antenna applied to 5G broadband and array antenna |
| CN115020964A (en) * | 2022-06-14 | 2022-09-06 | 中国电子科技集团公司第十四研究所 | Cascade antenna based on BCB transmission structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101141023A (en) * | 2007-09-07 | 2008-03-12 | 中国电子科技集团公司第五十五研究所 | Microcomputer electric stacking type millimeter wave antenna |
| US20130189935A1 (en) * | 2012-01-24 | 2013-07-25 | E I Du Pont De Nemours And Company | LOW TEMPERATURE CO-FIRED CERAMIC (LTCC) SYSTEM IN A PACKAGE (SiP) CONFIGURATIONS FOR MICROWAVE/MILLIMETER WAVE PACKAGING APPLICATIONS |
| CN104871369A (en) * | 2013-01-14 | 2015-08-26 | 英特尔公司 | Backside redistribution layer patch antenna |
| CN105826275A (en) * | 2016-03-21 | 2016-08-03 | 中国电子科技集团公司第五十五研究所 | Silicon-based multichannel TR assembly and design method |
| CN105846841A (en) * | 2016-03-21 | 2016-08-10 | 中国电子科技集团公司第五十五研究所 | Silicon-based three-dimensional integrated receiving front-end |
| CN107275226A (en) * | 2017-07-02 | 2017-10-20 | 中国航空工业集团公司雷华电子技术研究所 | A kind of radio frequency component integrated approach |
-
2017
- 2017-12-24 CN CN201711413356.8A patent/CN108172564B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101141023A (en) * | 2007-09-07 | 2008-03-12 | 中国电子科技集团公司第五十五研究所 | Microcomputer electric stacking type millimeter wave antenna |
| US20130189935A1 (en) * | 2012-01-24 | 2013-07-25 | E I Du Pont De Nemours And Company | LOW TEMPERATURE CO-FIRED CERAMIC (LTCC) SYSTEM IN A PACKAGE (SiP) CONFIGURATIONS FOR MICROWAVE/MILLIMETER WAVE PACKAGING APPLICATIONS |
| CN104871369A (en) * | 2013-01-14 | 2015-08-26 | 英特尔公司 | Backside redistribution layer patch antenna |
| CN105826275A (en) * | 2016-03-21 | 2016-08-03 | 中国电子科技集团公司第五十五研究所 | Silicon-based multichannel TR assembly and design method |
| CN105846841A (en) * | 2016-03-21 | 2016-08-10 | 中国电子科技集团公司第五十五研究所 | Silicon-based three-dimensional integrated receiving front-end |
| CN107275226A (en) * | 2017-07-02 | 2017-10-20 | 中国航空工业集团公司雷华电子技术研究所 | A kind of radio frequency component integrated approach |
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| CN109346821A (en) * | 2018-09-19 | 2019-02-15 | 中国科学院上海微系统与信息技术研究所 | Wafer level silicon substrate integration of compact fractal antenna and preparation method thereof |
| CN109216938A (en) * | 2018-10-17 | 2019-01-15 | 成都瑞迪威科技有限公司 | A kind of low section miniaturization phased array antenna |
| CN109546278A (en) * | 2018-10-25 | 2019-03-29 | 西安电子科技大学 | A kind of three-dimensional coupler and preparation method thereof based on through silicon via |
| CN109546278B (en) * | 2018-10-25 | 2021-05-28 | 西安电子科技大学 | Three-dimensional coupler based on through silicon via and preparation method thereof |
| CN111362227A (en) * | 2018-12-25 | 2020-07-03 | 无锡华润矽科微电子有限公司 | MEMS sensor packaging structure |
| CN109921199A (en) * | 2019-03-05 | 2019-06-21 | 成都雷电微力科技有限公司 | A kind of airproof T/R module of double bamboo plywood transceiving chip |
| CN109921199B (en) * | 2019-03-05 | 2021-06-22 | 成都雷电微力科技股份有限公司 | Airtight TR module with double-sided assembled transceiver chip |
| CN110518005A (en) * | 2019-07-19 | 2019-11-29 | 上海交通大学 | The cascaded modulator and RF IC isomery of optical analog to digital conversion chip encapsulate |
| CN110518005B (en) * | 2019-07-19 | 2022-01-28 | 上海交通大学 | Cascade modulator of optical analog-digital conversion chip and heterogeneous package of radio frequency integrated circuit |
| CN110620107A (en) * | 2019-09-23 | 2019-12-27 | 苏州福唐智能科技有限公司 | RF radio frequency device and manufacturing method thereof |
| CN110620107B (en) * | 2019-09-23 | 2021-03-16 | 停稳(北京)智能停车场管理有限公司 | RF radio frequency device and manufacturing method thereof |
| US11362045B2 (en) | 2019-12-17 | 2022-06-14 | Industrial Technology Research Institute | Chip package structure |
| CN111308462A (en) * | 2019-12-19 | 2020-06-19 | 中国电子科技集团公司第五十五研究所 | Millimeter wave detection and communication integrated phased array system |
| CN111308462B (en) * | 2019-12-19 | 2022-09-23 | 南京国微电子有限公司 | Millimeter wave detection and communication integrated phased array system |
| CN111276787A (en) * | 2019-12-31 | 2020-06-12 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated millimeter wave AiP phased array element |
| CN111834344B (en) * | 2020-06-11 | 2021-12-21 | 西安电子科技大学 | Low-electromagnetic-loss silicon-based gallium nitride microwave millimeter wave transmission line and preparation method thereof |
| CN111834344A (en) * | 2020-06-11 | 2020-10-27 | 西安电子科技大学 | Low-electromagnetic-loss silicon-based gallium nitride microwave millimeter wave transmission line and preparation method thereof |
| CN112051551A (en) * | 2020-09-10 | 2020-12-08 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active subarray |
| CN112051551B (en) * | 2020-09-10 | 2024-01-02 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active sub-array |
| CN112436242A (en) * | 2020-10-26 | 2021-03-02 | 中国电子科技集团公司第十三研究所 | High integrated microwave assembly |
| CN112615120A (en) * | 2020-12-07 | 2021-04-06 | 中国电子科技集团公司第五十五研究所 | Ultra-wideband coplanar waveguide transmission line based on silicon-based three-dimensional integration technology |
| CN112531339A (en) * | 2020-12-11 | 2021-03-19 | 安徽大学 | Millimeter wave broadband packaged antenna based on Fan-out packaging technology |
| CN112531339B (en) * | 2020-12-11 | 2022-04-15 | 安徽大学 | Millimeter wave broadband packaged antenna based on Fan-out packaging technology |
| CN113437500A (en) * | 2021-06-03 | 2021-09-24 | 中国电子科技集团公司第三十八研究所 | Three-dimensional SRRs-based metamaterial microstrip antenna and manufacturing method thereof |
| CN114784485A (en) * | 2022-04-19 | 2022-07-22 | 南京濠暻通讯科技有限公司 | Millimeter wave dual-polarization packaging antenna applied to 5G broadband and array antenna |
| CN115020964A (en) * | 2022-06-14 | 2022-09-06 | 中国电子科技集团公司第十四研究所 | Cascade antenna based on BCB transmission structure |
| CN115020964B (en) * | 2022-06-14 | 2024-04-23 | 中国电子科技集团公司第十四研究所 | Laminated antenna based on BCB transmission structure |
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Effective date of registration: 20211130 Address after: 210000 room 4001, Dongfang Building, No. 1, Dongji Avenue, Jiangning District, Nanjing, Jiangsu Province (Jiangning Development Zone) Patentee after: Nanjing guomicroelectronics Co., Ltd Address before: 210016 No. 524 East Zhongshan Road, Jiangsu, Nanjing Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute |