CN113772617B - Microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation - Google Patents
Microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation Download PDFInfo
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- CN113772617B CN113772617B CN202111061951.6A CN202111061951A CN113772617B CN 113772617 B CN113772617 B CN 113772617B CN 202111061951 A CN202111061951 A CN 202111061951A CN 113772617 B CN113772617 B CN 113772617B
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 73
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 25
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0019—Protection against thermal alteration or destruction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure which comprises a heat dissipation shell, a silicon-based assembly, a switching circuit board, a packaging cover plate and a button connector, wherein the heat dissipation shell is connected with the packaging cover plate to form a closed cavity for accommodating the silicon-based assembly and the switching circuit board which are connected with each other, the silicon-based assembly is connected with the heat dissipation shell, the switching circuit board is connected with the packaging cover plate, the button connector comprises a first type and a second type, the first type penetrates through the bottom wall of the heat dissipation shell to be connected with the silicon-based assembly, a flow passage for circulating cooling liquid is embedded in the heat dissipation shell, the second type penetrates through the packaging cover plate to be connected with the switching circuit board, and the silicon-based assembly is packaged through a metal layer, a copper through hole, a silicon through hole and a Ball Grid Array (BGA) solder ball array to realize electrical interconnection among the button connector, the switching circuit board and the silicon-based assembly, and the button connector is used for signal transmission between the silicon-based assembly and the outside. The structure can simultaneously have high integration level, high heat conduction efficiency, high practicability and long service life.
Description
Technical Field
The invention relates to the technical field of three-dimensional interconnection and heat dissipation of microsystems, in particular to a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure.
Background
Currently, integration, high integration and microminiaturization of electronic systems for weaponry are important trends. The radio frequency front end adopts microwave multi-layer board integration to manufacture a multi-chip module (MCM), or adopts LTCC (Low Temperature Co-FIRED CERAMIC) as a representative, realizes three-dimensional interconnection based on the mixed integration means of the traditional thick and thin film processes, and adopts high-temperature co-fired ceramic HTCC (High Temperature Co-FIRED CERAMIC), multi-layer high-precision BT type PCB and other technologies to realize the radio frequency micro system, which gradually becomes the mainstream of application.
In recent years, due to the development of microelectronic processes and the development of bulk silicon micromachining process technologies, wafer level assembly (WSA) is adopted to form ultra-compact and ultra-miniature active subarrays, passive on-chip Integration (IPD), on-chip high-density copper interconnection multilayer wiring, bonding of TSVs and wafers are realized under the wafer process, and the development of a radio frequency microsystem based on a new process of silicon-based MEMS (Micro-Electro-MECHANICAL SYSTEM) becomes a new choice.
For the design of a radio frequency micro system, the heat dissipation problem is always the focus of research, and particularly in the field of missile-borne phased array radars, the high-power development of the radio frequency micro system is severely restricted by the heat accumulation effect, so that the detection distance of the radars is influenced. The three-dimensional integrated power density of the microsystem is obviously increased, various chips, elements, interconnections, power supply systems and the like in the system are closely arranged, the thermal problem is serious, the thermal problem and the electromagnetic problem are mutually coupled and mutually influenced, and the thermal problem and the electromagnetic problem become key factors for restricting the working performance of the high-density integrated system.
In the design of the radio frequency micro system, the following heat dissipation technologies exist, but the following problems exist:
1) The heat conduction pipe has various forms, including folding, circulating and vibrating, but the integration level is not high.
2) The spray heat dissipation directly sprays heat dissipation to the heat source, needs low pressure, and the practicality is not high.
3) Thermoelectric cooling, which uses thermoelectric effect cooling, but has low heat conduction efficiency.
4) The micro-flow channel adopts gas or liquid to conduct heat, has high efficiency, but needs to be finished synchronously with the device or substrate preparation process, has higher specificity and limited engineering usability.
Therefore, it is necessary to provide a design of a radio frequency micro system, which has high integration, high heat conduction efficiency, high practicability and long service life.
Disclosure of Invention
The invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure which can simultaneously have high integration level, high heat conduction efficiency, high practicability and long service life.
To achieve the above and other related objects, the present invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure, including a heat dissipation housing, a silicon-based assembly, a switching circuit board, a packaging cover plate and a button connector;
the heat dissipation shell is connected with the packaging cover plate to form a closed cavity, and the closed cavity is used for accommodating the silicon-based component and the switching circuit board which are connected with each other, wherein the silicon-based component is connected with the heat dissipation shell, and the switching circuit board is connected with the packaging cover plate;
the hair button connectors comprise a first type of hair button connector and a second type of hair button connector;
The first type of button connector penetrates through the bottom wall of the heat dissipation shell and is connected with the silicon-based component, a flow channel is embedded in the heat dissipation shell, and the flow channel is used for circulating cooling liquid;
the second type of button connector penetrates through the packaging cover plate and is connected with the switching circuit board;
The silicon-based component is electrically interconnected with the button connector, the switching circuit board and the silicon-based component through the metal layer, the copper through hole, the silicon through hole and the BGA solder ball array package, and the button connector is used for carrying out signal transmission between the silicon-based component and the outside.
Preferably, the first type of button connector comprises a first button radio frequency coaxial electrical connector, the second type of button connector comprises a second button radio frequency coaxial electrical connector and a button multi-core low frequency connector, the first button radio frequency coaxial electrical connector and the second button radio frequency coaxial electrical connector are used for external radio frequency microwave signal transmission, and the button multi-core low frequency connector is used for external low frequency control signal and electric signal transmission.
Preferably, the silicon-based component comprises an antenna surface and an excitation surface which are opposite, wherein a radio frequency receiving and transmitting port is arranged on the antenna surface and used for being connected with the first button-hair radio frequency coaxial electric connector, and the excitation surface is connected with the switching circuit board through a BGA packaging technology.
Preferably, the first button radio frequency coaxial electric connector comprises a first SMP radio frequency connector and a first button end which are connected with each other and are respectively positioned at two ends, and an internal filling medium, wherein the first SMP radio frequency connector is an external radio frequency microwave signal interface, and the first button end is elastically contacted with the radio frequency receiving and transmitting port.
Preferably, the second button rf coaxial electrical connector includes a second SMP rf connector and a second button end connected to each other and located at two ends respectively, and an internal filling medium, two ends of the button rf multi-core low frequency connector are a low frequency J30J end and a third button end respectively, the second SMP rf connector is an external rf microwave signal interface, the low frequency J30J end is an external low frequency control signal and electrical signal interface, and the second button end and the third button end are elastically interconnected with a bonding pad on the switching circuit board.
Preferably, the silicon-based assembly is embedded with a silicon adapter plate, and the silicon connecting plate comprises a silicon through hole penetrating through the silicon adapter plate;
A plurality of dielectric layers are arranged on one end face of the silicon adapter plate, a plurality of copper wiring metals are arranged on the upper surface and the lower surface of each dielectric layer, the copper wiring metals on the upper surface and the lower surface are interconnected through copper through holes among layers, and one end of each silicon through hole is connected with one copper wiring metal on the upper surface;
The other end face of the silicon adapter plate is used as the antenna face of the silicon-based assembly, and the other end of the silicon through hole is connected with the radio frequency receiving and transmitting port.
Preferably, a power amplifier chip is bonded at a corresponding bonding pad on one copper wiring metal arranged on the upper surface of the dielectric layer through nano silver paste, and the power amplifier chip is also connected with other bonding pads on the copper wiring metal arranged on the upper surface of the dielectric layer through a bond alloy wire.
Preferably, the surface of the heat dissipation shell is provided with a plurality of first radio frequency openings arranged in an array, and the flow channel passes through between every two rows of the first radio frequency openings;
The transfer circuit board comprises a top metal layer and a bottom metal layer which are opposite, the top metal layer is provided with BGA solder balls corresponding to the excitation surface bonding pads, and the bottom metal layer is provided with bonding pads which are mutually connected with the second capillary button radio frequency coaxial electric connector and the capillary button multi-core low-frequency connector;
The packaging cover plate is provided with a second radio frequency opening and a low frequency opening, the second radio frequency opening is used for fixing the second button radio frequency coaxial electric connector, and the low frequency opening is used for fixing the button multicore low frequency connector.
Preferably, the heat dissipation shell is made of 70% Si-Al high-silicon aluminum alloy material with the thermal expansion coefficient of 7 multiplied by 10 < -6 >/DEG C, the switching circuit board is made of FR4 printed circuit board, and the packaging cover plate is made of 27% Si-Al high-silicon aluminum alloy material.
Preferably, the antenna surface of the silicon-based component is sintered on the heat dissipation shell by adopting nano silver paste, the excitation surface of the silicon-based component is welded on the switching circuit board by tin-lead solder, and the heat dissipation shell is hermetically packaged with the packaging cover plate by adopting a laser seal welding process.
In summary, the invention is used as a radio frequency micro system packaging structure, is realized in a modular integration mode, can realize a larger-scale array through expansion, can solve the problems of unmatched thermal expansion coefficients and incapability of meeting assembly requirements of process temperature gradients of the current complex components, and finally integrates the three-dimensional interconnection transmission and heat dissipation functions of signals of the microwave components, thereby reducing the volume of the system.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional interconnection and heat dissipation integrated microsystem package structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a silicon-based component in a three-dimensional interconnection and heat dissipation integrated microsystem package structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a silicon interposer in a three-dimensional interconnection and heat dissipation integrated micro-system package structure according to an embodiment of the present invention;
FIG. 4 is a schematic view of a heat dissipation housing in a three-dimensional interconnection and heat dissipation integrated micro-system package structure according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a transfer circuit board in a three-dimensional interconnection and heat dissipation integrated micro system package structure according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a package cover plate in a three-dimensional interconnection and heat dissipation integrated microsystem package structure according to an embodiment of the present invention.
Detailed Description
The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure provided by the invention is further described in detail below with reference to fig. 1-6 and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "fixed" are to be construed broadly, and may, for example, be fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Referring to fig. 1, an embodiment of the present invention provides a three-dimensional interconnection and heat dissipation integrated microsystem packaging structure, which includes a heat dissipation housing 1, a silicon-based assembly 2, a switching circuit board 3, and a packaging cover plate 4 sequentially disposed from top to bottom as shown in fig. 1. The heat dissipation shell 1 is connected with the packaging cover plate 4 to form a closed cavity, and the closed cavity is used for accommodating the silicon-based component 2 and the switching circuit board 3 which are connected with each other, wherein the silicon-based component 2 is arranged on the inner bottom surface of the heat dissipation shell 1, and the switching circuit board 3 is connected with the packaging cover plate 4. The heat dissipation shell 1 is provided with a first type of button connector penetrating through the bottom wall of the heat dissipation shell 1 and connected with the silicon-based component 2, and in addition, as shown in fig. 4, the heat dissipation shell 1 is embedded with a runner 22, and the runner 22 is used for circulating cooling liquid. The packaging cover plate 4 is provided with a second type of button connector penetrating through the packaging cover plate 4 and connected with the switching circuit board 3. The silicon-based component 2 is electrically interconnected with the button connector, the switching circuit board 3 and the silicon-based component 2 through a metal layer, a copper through hole, a through silicon hole (Through Silicon Via, TSV) and a Ball grid array package 13 (Ball grid array), and the button connector is used for carrying out signal transmission between the silicon-based component 2 and the outside. The system is realized in a modular integrated mode, can realize a larger-scale array through expansion, and integrates the three-dimensional interconnection transmission and heat dissipation functions of microwave component signals.
In this embodiment, referring to fig. 1, the first type of the button connector disposed on the heat dissipation housing 1 includes a first button rf coaxial connector 5, and the second type of button connector disposed on the package cover 4 includes a second button rf coaxial connector and a button multi-core low frequency connector 6. The first button radio frequency coaxial electric connector 5 and the second button radio frequency coaxial electric connector are used for external radio frequency microwave signal transmission, and the button multicore low frequency connector 6 is used for external low frequency control signal and electric signal transmission. The button is a connector commonly used for microsystems, is commonly used for elastic connection of inner conductors, is arranged on an outer conductor and can assist the connection of the outer conductor, and the button can realize simultaneous transmission of multiple paths of signals and realize dense three-dimensional interconnection of microsystems.
In this embodiment, as shown in fig. 2, the silicon-based component 2 includes an antenna surface 10 and an excitation surface 12 opposite to each other, where a radio frequency transceiver 11 is disposed on the antenna surface 10 and is used for connecting with the first button-hair radio frequency coaxial electrical connector 5, and the excitation surface 12 is connected with the interposer circuit board 3 through a BGA solder ball array package 13. The silicon-based component 2 is prepared based on a silicon-based MEMS technology, in this embodiment, an antenna surface 10 of the silicon-based component 2 is provided with 16 radio frequency transceiver ports 11, the rest is large-area metal, which is used for interconnecting with the heat dissipation housing 1, heat dissipation can be performed through the heat dissipation housing 1, and an excitation surface 12 of the silicon-based component 2 is a solder ball array package 13. Of course, it should be understood by those skilled in the art that the number of the rf transceiver ports 11 is not limited, and the BGA packaging technology can effectively improve the integration level and simultaneously ensure that the requirements of high power consumption are met.
In this embodiment, as shown in fig. 1, the first button rf coaxial electrical connector 5 generally includes a first SMP rf connector 7, an internal filling medium 8, and a first button end 9, where the first SMP rf connector 7 is elastically interconnected with a central contact of the first button end 9, the first SMP rf connector 7 is used as an external rf microwave signal interface, and the first button end 9 is elastically contacted with an antenna port of the silicon-based assembly 2.
Similarly, the second button rf coaxial electrical connector disposed on the package cover 4 also includes a second SMP rf connector, an internal filling medium, and a second button end, where the second SMP rf connector is used as an external rf microwave signal interface, and the second button end is elastically interconnected with a corresponding pad on the adapting circuit board 3.
In addition, the packaging cover plate 4 further comprises a wool button multi-core low-frequency connector 6, two ends of the wool button multi-core low-frequency connector 6 are respectively a low-frequency J30J end and a second wool button end, the low-frequency J30J end is an external low-frequency control signal and electric signal interface, and the second wool button end is elastically interconnected with a bonding pad on the switching circuit board 3.
In this embodiment, the silicon-based component 2 is embedded with a silicon interposer 14, and as shown in fig. 3, the silicon interposer 14 includes a through silicon via 15 penetrating the silicon interposer 14. A plurality of dielectric layers are disposed on one end surface of the silicon interposer 14, for example, two silicon dioxide dielectric layers 16 are adopted in the invention, a plurality of copper wiring metals 18 are disposed on each silicon dioxide dielectric layer 16, and the layers are interconnected through copper through holes 17. The through silicon vias 15 in the silicon interposer 14 are manufactured by adopting a blind hole, the diameter is 20 mu m, the depth of the holes is 200 mu m, the depth-to-width ratio is 10:1, solid copper is electroplated inside, and the transmission loss of a single through silicon via 15 is less than 0.13dB@10GHz through test. The through silicon via technology is a high-density interconnection packaging technology, gradually replaces the mature wire bonding technology in the prior art, is considered as a fourth generation packaging technology, and can effectively improve the integration level of a system by adopting the through silicon via technology.
In addition, a power amplifier chip 19 is disposed in the silicon-based assembly 2, and is bonded at a corresponding bonding pad on the uppermost copper wiring metal 18 on the silicon interposer 14 by using nano silver paste, and a radio frequency signal output by the power amplifier chip 19 is transmitted to another bonding pad on the copper wiring metal 18 through a bond wire 20, and is transmitted to the radio frequency transceiver 11 through a copper through hole 17 and a silicon through hole 15. And after the heat generated by the power amplifier chip 19 is conducted to the heat dissipation shell 1 through the copper through hole 17 array, the silicon through hole 15 array and the nano silver particle sintering interconnection welding spots, the heat of the silicon-based component is taken away by utilizing the cooling liquid in the heat dissipation shell 1, so that the normal and stable operation of the power amplifier chip 19 is ensured, and the heat dissipation performance of the system provided by the invention is effectively improved.
In this embodiment, the heat dissipation housing 1 is made of a 70% si—al high-silicon aluminum alloy material with a thermal expansion coefficient of about 7×10 "6/°c, and 16 radio frequency openings 21 for welding the first button radio frequency coaxial electrical connector 5 are provided on the surface, as shown in fig. 4, the hole-to-hole center distance between the radio frequency openings 21 is one half wavelength, and the radio frequency openings are arranged on the heat dissipation housing 1 in an array form to form a 4*4 rectangular array.
In addition, as shown in fig. 4, the flow passage 22 is spaced from the radio frequency opening 21 for welding the first button radio frequency coaxial electric connector 5, and two ends of the flow passage 22 are provided with a cooling liquid inlet 23 and a cooling liquid outlet 24. To further improve the heat dissipation efficiency, the flow channels 22 are S-shaped, rectangular in cross section, and have paths parallel to each row of the rf holes 21, along the intervals between each row of the matrix array, and bend when extending to the last rf hole 21 and enter the intervals between the next rows.
In this embodiment, as shown in fig. 5, the interposer circuit board 3 may be an FR4 printed circuit board, the top metal layer 25 of the interposer circuit board 3 is provided with BGA solder balls corresponding to the pads of the excitation surface 12 of the silicon-based component 2, and the bottom metal layer 27 is provided with pads interconnected with the capillary multi-core low frequency connector 6.
In this embodiment, as shown in fig. 6, the packaging cover 4 may be made of a high silicon aluminum alloy material with a concentration of 27% si—al, and is internally provided with 4 rf holes 21 and 4 low-frequency holes 28 for welding the second button rf coaxial connector, so as to achieve welding of the button rf coaxial connector 5 and the button multi-core low-frequency connector 6, which is of course not limited in number.
The invention has the advantages that:
1. The thermal expansion coefficient of the 70% Si-Al high-silicon aluminum alloy material adopted in the invention is about 7 multiplied by 10 -6/DEG C, and is more close to that of a Si chip (the thermal expansion coefficient is 4.1 multiplied by 10 -6/DEG C), and the heat dissipation shell is prepared by adopting the material, so that the internal stress between a silicon-based component and metal can be reduced, the reliability of the product is improved, and the service life of the product is prolonged.
2. The nano silver adhesive is adopted as the bonding material between the chip and the silicon adapter plate, and between the heat dissipation shell and the silicon-based component, compared with other solders, the assembly of the power chip can be completed under the condition of lower temperature, and meanwhile, the problems that the current complex component and the module product are difficult to sinter and the process temperature gradient cannot meet the assembly requirement can be solved due to the characteristics of excellent electric conduction and thermal conductivity, high bonding strength, high stability and low-temperature curing and high-temperature service.
3. The button electric connector adopted in the invention is sintered in the heat dissipation shell and the packaging cover plate, the transmission cooling liquid flow channel is arranged in the heat dissipation shell, the three-dimensional interconnection transmission and heat dissipation functions of the microwave component signals are integrated, the system volume is reduced, the air tightness of the whole structure is realized through laser seal welding, the reliability of the product is improved, and the service life of the product is prolonged.
4. The invention adopts the silicon through holes with high depth-to-width ratio, and the solid copper is electroplated inside, thereby reducing radio frequency transmission loss, increasing the density of the silicon through holes in the silicon-based component and improving the heat dissipation efficiency.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (8)
1. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure is characterized by comprising a heat dissipation shell, a silicon-based assembly, a switching circuit board, a packaging cover plate and a button connector;
the heat dissipation shell is connected with the packaging cover plate to form a closed cavity, and the closed cavity is used for accommodating the silicon-based component and the switching circuit board which are connected with each other, wherein the silicon-based component is connected with the heat dissipation shell, and the switching circuit board is connected with the packaging cover plate;
the hair button connectors comprise a first type of hair button connector and a second type of hair button connector;
The first type of button connector penetrates through the bottom wall of the heat dissipation shell and is connected with the silicon-based component, a flow channel is embedded in the heat dissipation shell, and the flow channel is used for circulating cooling liquid;
the second type of button connector penetrates through the packaging cover plate and is connected with the switching circuit board;
the silicon-based component realizes the electrical interconnection among the button connector, the switching circuit board and the silicon-based component through the metal layer, the copper through hole, the silicon through hole and the BGA solder ball array package, the button connector is used for carrying out signal transmission between the silicon-based component and the outside,
The first type of hair button connector comprises a first hair button radio frequency coaxial electric connector, the second type of hair button connector comprises a second hair button radio frequency coaxial electric connector and a hair button multi-core low-frequency connector, the first hair button radio frequency coaxial electric connector and the second hair button radio frequency coaxial electric connector are used for external radio frequency microwave signal transmission, the hair button multi-core low-frequency connector is used for external low-frequency control signal and electric signal transmission,
The second hair button radio frequency coaxial electric connector comprises a second SMP radio frequency connector and a second hair button end which are connected with each other and are respectively positioned at two ends, and an internal filling medium, wherein two ends of the hair button multi-core low-frequency connector are respectively a low-frequency J30J end and a third hair button end, the second SMP radio frequency connector is an external radio frequency microwave signal interface, the low-frequency J30J end is an external low-frequency control signal and electric signal interface, and the second hair button end and the third hair button end are elastically interconnected with a bonding pad on the switching circuit board.
2. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure as claimed in claim 1, wherein the silicon-based component comprises an antenna surface and an excitation surface which are opposite, a radio frequency transceiver port is arranged on the antenna surface and is used for being connected with the first button radio frequency coaxial electric connector, and the excitation surface is connected with the switching circuit board through a BGA packaging technology.
3. The integrated three-dimensional interconnect and heatsink microsystem package structure of claim 2, wherein said first button rf coaxial electrical connector includes a first SMP rf connector and a first button end connected to each other and located at two ends, respectively, and an internal filling medium, said first SMP rf connector being an external rf microwave signal interface, said first button end being in elastic contact with said rf transceiver port.
4. The three-dimensional interconnect and heatsink integrated microsystem package structure of claim 2, wherein said silicon-based assembly has a silicon interposer embedded therein, said silicon interposer including through-silicon vias therethrough;
A plurality of dielectric layers are arranged on one end face of the silicon adapter plate, a plurality of copper wiring metals are arranged on the upper surface and the lower surface of each dielectric layer, the copper wiring metals on the upper surface and the lower surface are interconnected through copper through holes among layers, and one end of each silicon through hole is connected with one copper wiring metal on the upper surface;
The other end face of the silicon adapter plate is used as the antenna face of the silicon-based assembly, and the other end of the silicon through hole is connected with the radio frequency receiving and transmitting port.
5. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure as claimed in claim 4, wherein a power amplifier chip is bonded at a corresponding bonding pad on one copper wiring metal arranged on the upper surface of the dielectric layer through nano silver paste, and the power amplifier chip is further connected with other bonding pads on the copper wiring metal arranged on the upper surface of the dielectric layer through a bond alloy wire.
6. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure as claimed in claim 2, wherein the surface of the heat dissipation shell is provided with a plurality of first radio frequency openings arranged in an array, and the flow channel passes through between every two rows of the first radio frequency openings;
The transfer circuit board comprises a top metal layer and a bottom metal layer which are opposite, the top metal layer is provided with BGA solder balls corresponding to the excitation surface bonding pads, and the bottom metal layer is provided with bonding pads which are mutually connected with the second capillary button radio frequency coaxial electric connector and the capillary button multi-core low-frequency connector;
The packaging cover plate is provided with a second radio frequency opening and a low frequency opening, the second radio frequency opening is used for fixing the second button radio frequency coaxial electric connector, and the low frequency opening is used for fixing the button multicore low frequency connector.
7. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure as claimed in claim 1, wherein the heat dissipation shell is made of a 70% si-Al high-silicon aluminum alloy material with a thermal expansion coefficient of 7 x 10 -6/°, the switching circuit board is made of an FR4 printed circuit board, and the packaging cover plate is made of a 27% si-Al high-silicon aluminum alloy material.
8. The three-dimensional interconnection and heat dissipation integrated microsystem packaging structure as claimed in claim 1, wherein an antenna surface of the silicon-based component is sintered on the heat dissipation shell by adopting nano silver paste, an excitation surface of the silicon-based component is welded on the switching circuit board by tin-lead solder, and the heat dissipation shell is hermetically packaged with the packaging cover plate by a laser sealing welding process.
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| CN114975318B (en) * | 2022-04-29 | 2025-06-17 | 北京航天控制仪器研究所 | A three-dimensional integrated silicon-based inertial microsystem with embedded microfluidic channel and its manufacturing method |
| CN115604181A (en) * | 2022-10-13 | 2023-01-13 | 深圳移航通信技术有限公司（Cn） | Electronic equipment |
| CN116365256B (en) * | 2023-04-17 | 2026-02-06 | 中国电子科技集团公司第三十八研究所 | Extensible splicing manufacturing method of Ka-Ku dual-polarized microstrip antenna assembly unit |
| CN117130110B (en) * | 2023-10-25 | 2024-02-23 | 西安电子科技大学 | A photoelectric adapter socket with integrated liquid cooling and heat dissipation |
| CN119812158B (en) * | 2024-12-24 | 2026-02-27 | 中国电子科技集团公司第十研究所 | High-tolerance vertical interconnection structure for direct connection port of SiP (silicon on insulator) package radio frequency array |
| CN120185567B (en) * | 2025-05-15 | 2025-09-23 | 深圳新声半导体有限公司 | Device packaging method, integrated device packaging structure, related device and equipment |
| CN120150672B (en) * | 2025-05-15 | 2025-09-23 | 深圳新声半导体有限公司 | Substrates, integrated device packaging structures, acoustic devices, and related equipment |
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