CN113766412A - Preparation method of groove with arc-shaped bottom corner and preparation method of MEMS microphone - Google Patents

Preparation method of groove with arc-shaped bottom corner and preparation method of MEMS microphone Download PDF

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Publication number
CN113766412A
CN113766412A CN202111303186.4A CN202111303186A CN113766412A CN 113766412 A CN113766412 A CN 113766412A CN 202111303186 A CN202111303186 A CN 202111303186A CN 113766412 A CN113766412 A CN 113766412A
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groove
layer
window
etching
photoresist layer
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CN113766412B (en
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陈家伟
宋健
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Semiconductor Manufacturing Electronics Shaoxing Corp SMEC
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Semiconductor Manufacturing Electronics Shaoxing Corp SMEC
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Abstract

The invention provides a preparation method of a groove with an arc-shaped bottom angle and a preparation method of an MEMS microphone. The groove pattern in the photoresist layer can be accurately copied to the layer to be etched through a plasma etching process, and the photoresist material of the photoresist layer extends towards the window along with the etching process so as to automatically reduce the size of the opening of the window, so that the groove with the arc-shaped bottom angle can be gradually formed along with the extension of the photoresist material. Therefore, the groove preparation method provided by the invention not only can accurately control the size of the formed groove, but also can automatically form the arc-shaped bottom angle.

Description

Preparation method of groove with arc-shaped bottom corner and preparation method of MEMS microphone
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a groove with an arc-shaped bottom angle and a preparation method of an MEMS microphone.
Background
In semiconductor processing, it is often necessary to prepare recesses to further form corresponding devices. For example, a gate trench needs to be formed in a trench field effect transistor, an isolation trench needs to be formed in a trench isolation structure, and a cavity needs to be formed in a MEMS device.
Currently, the preparation method for the grooves generally comprises: and forming a photoresist layer on the layer to be etched, and performing an etching process to form a groove in the layer to be etched. In order to enable the formed groove to have an arc-shaped bottom angle, a wet etching process is generally adopted in the prior art, however, the wet etching process is isotropic etching, so that the etching precision of a layer to be etched is difficult to control, and the size of the formed groove is easy to deviate.
Disclosure of Invention
The invention aims to provide a preparation method of a groove with an arc-shaped bottom angle, which aims to solve the problem that the etching precision is difficult to control in the prior art.
In order to solve the technical problem, the invention provides a preparation method of a groove with an arc-shaped bottom angle, which comprises the following steps: forming a photoresist layer on the layer to be etched, wherein a window with a first opening size is formed in the photoresist layer; and performing a plasma etching process to form a groove in the layer to be etched, including: sequentially consuming the layers to be etched exposed in the window through the window to form a groove with a first opening size in a first etching stage; the photoresist material of the photoresist layer gradually extends towards the center of the window, the size of the opening of the window is gradually reduced, so that the consumption of the bottom corner of the groove in the second etching stage is gradually increased from the edge of the groove to the center, and the bottom corner of the groove is modified into an arc shape.
Optionally, in the plasma etching process, an etching selection ratio of the layer to be etched to the photoresist layer is greater than or equal to 10.
Optionally, the etching gas used in the plasma etching process includes a fluorine-containing gas. Wherein the fluorine-containing gas includes, for example, carbon tetrafluoride. The method can further comprise the following steps: argon, oxygen and carbon monoxide.
Optionally, in the plasma etching process, an etchant is deposited on the top surface of the photoresist layer until the photoresist layer is deformed to extend toward the center of the window in the second etching stage.
Optionally, the thickness of the photoresist layer is greater than or equal to 2.8 μm. And the depth of the groove is more than or equal to 2 μm.
Optionally, the material of the layer to be etched at least in the depth region corresponding to the bottom corner comprises silicon oxide.
Optionally, the bottom angle of the groove formed in the first etching stage is a right angle.
Optionally, an etching stop layer is further formed at the bottom of the layer to be etched, and the plasma etching process is performed and etching is stopped at the etching stop layer.
Another object of the present invention is to provide a method for forming a MEMS microphone, including:
sequentially forming a first sacrificial layer, a vibrating membrane, a second sacrificial layer and a back plate on the front surface of the substrate;
forming a photoresist layer on the back surface of the substrate, wherein a window with a first opening size is formed in the photoresist layer; and performing a plasma etching process to sequentially etch the substrate and the first sacrificial layer to form a back cavity, including: sequentially consuming the substrate and the first sacrificial layer exposed in the window through the window to form a groove with a first opening size at a first etching stage; the photoresist material of the photoresist layer gradually extends towards the center of the window, the size of the opening of the window is gradually reduced, so that the consumption of the bottom corner of the groove in the second etching stage is gradually increased from the edge of the groove to the center, and the bottom corner of the groove is modified into an arc shape to form the back cavity.
Optionally, in the plasma etching process, an etching selection ratio of the first sacrificial layer to the photoresist layer is greater than or equal to 10.
Optionally, the etching gas used in the plasma etching process includes a fluorine-containing gas. For example, the fluorine-containing gas includes carbon tetrafluoride.
Optionally, the substrate is sequentially etched in the first etching stage, and etched into the first sacrificial layer.
In the preparation method of the groove with the arc-shaped bottom angle, the groove pattern in the photoresist layer can be accurately copied to the layer to be etched in the first etching stage by utilizing the plasma etching process, and the opening size of the window is automatically reduced by extending the photoresist material of the photoresist layer towards the window in the second etching stage, so that the groove with the arc-shaped bottom angle can be correspondingly formed along with the extension of the photoresist material in the second etching stage. That is, in the groove manufacturing method provided by the present invention, not only can the size of the formed groove (i.e., the size of the opening of the groove) be precisely controlled, but also the arc-shaped bottom angle can be automatically formed. When the preparation method of the groove provided by the invention is applied to the MEMS microphone, for example, a back cavity with an arc-shaped bottom angle can be formed, so that the stress of a microphone product is reduced, and the signal-to-noise ratio of the product is improved.
Drawings
Fig. 1-4 are schematic views of a groove having an arc-shaped bottom corner in the manufacturing process of the groove according to an embodiment of the present invention.
Fig. 5-7 are schematic structural diagrams of a MEMS microphone in a manufacturing process according to an embodiment of the invention.
Wherein the reference numbers are as follows: 110-layer to be etched; 120-etching stop layer; 100 a-a first groove; 100 b-a second groove; 100 c-a third groove; 200-a photoresist layer; 200 a-window; 10-a substrate; 10 a-the back cavity; 21-a first sacrificial layer; 22-a second sacrificial layer; 30-a diaphragm; 31 — a first insulating layer; 32-a first conductive layer; 33-a second insulating layer; 40-a back plate; 41-third insulating layer; 42-a second conductive layer; 50-photoresist layer.
Detailed Description
The following describes in detail a method for manufacturing a groove having an arc-shaped bottom corner and a method for manufacturing a MEMS microphone according to the present invention with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. And relative terms such as "above," "below," "top," "bottom," "above," and "below" as may be used in the figures, may be used to describe various elements' relationships to each other. These relative terms are intended to encompass different orientations of the elements in addition to the orientation depicted in the figures. For example, if the device were inverted relative to the view in the drawings, an element described as "above" another element, for example, would now be below that element.
Fig. 1-4 are schematic views of a groove having an arc-shaped bottom corner in the manufacturing process of the groove according to an embodiment of the present invention. As shown in fig. 1 to 4, the method for manufacturing the groove having the arc-shaped bottom corner in the present embodiment specifically includes the following process.
Referring first to fig. 1, a photoresist layer 200 is formed on a layer to be etched 110, a window 200a with a first opening dimension CD1 is formed in the photoresist layer 200, and it can be considered that an initial dimension of the window 200a in the photoresist layer 200 is a first opening dimension CD 1. The material of the layer to be etched 110 includes, for example, silicon or silicon dioxide, and the photoresist layer 200 is, for example, a photoresist layer.
Referring to fig. 2-4, a plasma etching process is performed to copy the window pattern in the photoresist layer 200 into the layer to be etched 110 to form a groove. Wherein the depth of the groove can reach 2 μm, for example, that is, the depth of the groove is greater than or equal to 2 μm.
Further, in the plasma etching process, the layer to be etched 110 and the photoresist layer 200 have a high etching selectivity, for example, a selectivity ratio of 10 or more. Therefore, the consumption of the photoresist layer 200 in the etching process is reduced, and even the consumption of the photoresist layer 200 can be avoided.
In this embodiment, the photoresist layer 200 is a photoresist layer, and the etching gas of the plasma etching process may be, for example, a fluoride gas, and the fluoride gas has a very low etching rate for the photoresist layer. And the material of the layer to be etched 110 comprises silicon oxide, for example, then the etching gas of the plasma etching process can be carbon fluoride gas (C), for example4F8) So as to ensure a higher etching rate for the layer to be etched 110. Optionally, the etching gas in the plasma etching process further includes argon (Ar) gas, so as to further improve the etching selectivity of the layer to be etched 110 and the photoresist layer 200. Utensil for cleaning buttockIn an embodiment, the etching gas in the plasma etching process may include the following components: carbon fluoride gas (C)4F8) Ar/oxygen (O)2) Carbon monoxide (CO).
The plasma etching process may specifically include the following etching stages.
In a first etching stage, specifically referring to fig. 2, the layer to be etched 110 exposed in the window is sequentially consumed through the window 200a to form a groove (i.e., a first groove 100 a) having an opening size identical to the initial size of the window in the first etching stage. That is, in the initial stage of the plasma etching process, the photoresist layer 200 can still maintain its original shape, and the opening size of the window 200a is also correspondingly maintained as the first opening size CD1, so that in the initial etching stage, the first groove 100a having the first opening size CD1 can be formed in the layer to be etched 110.
In this embodiment, the plasma etching process is specifically an anisotropic etching process, so that the bottom angle of the formed first groove 100a can be a right angle or a nearly right angle in the first etching stage. And through the first etching stage, the bottom of the first recess 100a is entirely etched to the first depth position of the layer to be etched 110, for example, the depth value of the first recess 100a formed in the first etching stage is 80% -95% of the depth value of the finally formed recess.
In a second etching stage, as shown in fig. 3 and 4, as the etching is performed, the photoresist material of the photoresist layer 200 gradually extends toward the center of the window, and the size of the opening of the window changes in a gradually decreasing trend, so that the consumption of the bottom corner of the groove in the second etching stage gradually increases from the edge of the groove to the center of the groove, thereby modifying the bottom corner of the groove into an arc shape.
As shown in fig. 2 and 3, in the second etching stage, an extension portion is formed as the photoresist material gradually extends toward the center of the window, and at this time, for example, the opening size of the window in the photoresist layer 200 may be reduced to a second opening size CD2, and the second groove 100b is formed by etching. The second groove 100b is further etched to a second depth position within a range corresponding to the second opening dimension CD2 at the groove bottom relative to the first groove 100a, and the second groove 100b is formed to an arcuate base angle within a range corresponding to the first opening dimension CD1 to the second opening dimension CD2 at the groove bottom.
As shown in fig. 3 and 4, as the etching proceeds, the photoresist material further extends toward the center of the window to form an extension portion, and at this time, for example, the size of the opening of the window in the photoresist layer 200 may be further reduced to a third opening size CD3, and the third recess 100c is formed by etching. With respect to the first groove 100a, the third groove 100c is further etched to a third depth position in the groove bottom in the range corresponding to the third opening dimension CD3, and the groove bottom of the third groove 100c in the range from the first opening dimension CD1 to the third opening dimension CD3 corresponds to forming an arc-shaped bottom angle.
It should be noted that in the plasma etching process, the etchant does not etch the photoresist layer 200, and continues to accumulate on the top surface of the photoresist layer 200 until the second etching stage, so that the photoresist layer 200 is deformed and extends toward the center of the window. In addition, as the photoresist material gradually extends toward the center of the window, the thickness of at least the portion of the photoresist layer 200 near the window is correspondingly gradually reduced.
In addition, since the depth of the prepared groove is large (for example, the depth of the groove is greater than or equal to 2 μm), and the etching time corresponding to the groove is long, the plasma etching process can at least meet the first etching stage, and the groove with the required depth can be formed at least until the second etching stage. In addition, a photoresist layer (photoresist layer) with a larger thickness is further provided in this embodiment, and the photoresist layer with a larger thickness is likely to deform in a long-time etching process, specifically, the thickness of the photoresist layer may be, for example, greater than or equal to 28000 angstroms.
In this embodiment, an etching stop layer 120 is further disposed below the layer to be etched 110, and the etching can be stopped on the etching stop layer 120.
It should be appreciated that the process of forming the arcuate base corners of the grooves is illustrated in this embodiment for clarity and is therefore exemplified in fig. 3 and 4. However, in a specific application, the size of the arc bottom angle of the groove can be controlled by adjusting the etching depth of the first etching stage, the extension size of the photoresist layer and the like according to requirements.
Based on the preparation method of the groove, the embodiment also provides a preparation method of the MEMS microphone. Fig. 5 to 7 are schematic structural diagrams of a MEMS microphone in an embodiment of the present invention during a manufacturing process thereof, and as shown in fig. 5 to 7, a manufacturing method of the MEMS microphone in the embodiment includes the following steps.
Step one, specifically referring to fig. 5, providing a substrate 10, and sequentially forming a first sacrificial layer 21, a diaphragm 30, a second sacrificial layer 22, and a back plate 40 on a front surface of the substrate 10.
The diaphragm 30 may further include a first conductive layer 32, and a first insulating layer 31 and a second insulating layer 33 on upper and lower sides of the first conductive layer 32. The material of the first conductive layer 32 may include polysilicon, and the material of the first insulating layer 31 and the second insulating layer 33 may include silicon nitride. And, the back plate 40 may include a second conductive layer 42 and a third insulating layer 41. the third insulating layer 41 is located on a side of the second conductive layer 42 close to the second sacrificial layer 22. The material of the second conductive layer 42 of the back plate 40 may also include polysilicon, and the material of the third insulating layer 41 may include silicon nitride.
Further, the material of the first sacrificial layer 21 may include silicon oxide. And, the material of the second sacrificial layer 22 may also include silicon oxide.
Step two, with continued reference to fig. 5, a photoresist layer 50 is formed on the back surface of the substrate 10, and a window with a first opening size is formed in the photoresist layer 50 to define a back cavity region of the MEMS device. In this embodiment, the photoresist layer 50 is specifically a photoresist layer.
And thirdly, referring to fig. 6 specifically, performing a plasma etching process to sequentially etch the substrate 10 and the first sacrificial layer 21 to form a back cavity 10 a. In the plasma etching process, the etching selection ratio of the first sacrificial layer 21 to the photoresist layer 50 is greater than or equal to 10. Specifically, the etching gas used in the plasma etching process may include a fluorine-containing gas, such as carbon tetrafluoride.
Further, the plasma etching process comprises: a first etch stage and a second etch stage.
In a first etching stage, the substrate 10 and the first sacrificial layer 21 exposed in the window are consumed in sequence through the window to form a recess of a first opening size in the first etching stage. In this embodiment, the substrate 10 is sequentially etched and etched into the first sacrificial layer 21 through the first etching stage, that is, the bottom of the groove formed through the first etching stage is located in the first sacrificial layer 21, and the groove does not penetrate through the first sacrificial layer 21.
In the second etching stage, the photoresist material of the photoresist layer 50 gradually extends toward the center of the window, so that the size of the opening of the window is gradually reduced, and the consumption of the bottom corner of the groove in the second etching stage is gradually increased from the edge of the groove to the center of the groove, so as to modify the bottom corner of the groove into an arc shape, thereby forming the back cavity 10a with an arc bottom corner. Specifically, as the etching is continuously performed, the etchant having almost no etching rate to the photoresist layer is deposited on the surface of the photoresist layer 50, and the photoresist material of the photoresist layer extends toward the window along with the increase of the deposition content, thereby achieving the automatic reduction of the window size.
In this embodiment, the etching is performed into the first sacrificial layer 21 through the first etching stage, so that the etching is continued on the first sacrificial layer 21 in the second etching stage, and the arc-shaped bottom corner is formed in the first sacrificial layer 21. In addition, a first insulating layer 31 (e.g., a silicon nitride layer) is formed on one side of the diaphragm 30 close to the first sacrificial layer 21, so that the second etching stage can be stopped at the first insulating layer 31, and the first conductive layer 32 in the diaphragm 30 is protected from etching damage under the protection of the first insulating layer 31.
It should be noted that the bottom corner of the back cavity 10a close to the diaphragm 30 is an arc bottom corner, so that the stress of the microphone product can be effectively reduced, and the signal-to-noise ratio of the product can be improved.
Further, the preparation method of the MEMS microphone further includes: step four, specifically referring to fig. 7, the second sacrificial layer 22 is at least partially removed to form a cavity between the diaphragm 30 and the back plate 40.
Specifically, a plurality of openings are formed in the back plate 40, and the second sacrificial layer 22 is exposed through the openings, so that the second sacrificial layer 22 can be etched by the etchant in the second sacrificial layer release process. Wherein the second sacrificial layer 22 may be etched using a hydrogen fluoride gas-containing dry etching process (VHF). Compared with the wet etching process for removing the second sacrificial layer 22, the dry etching process used in the present embodiment is beneficial to overcoming the problem that the etching residues are difficult to remove.
In summary, in the method for manufacturing a groove with an arc-shaped base angle provided in this embodiment, the plasma etching process is used to enable the groove pattern in the photoresist layer to be accurately copied to the layer to be etched in the first etching stage, and the photoresist material of the photoresist layer extends toward the window in the second etching stage to automatically reduce the opening size of the window, so that the groove with the arc-shaped base angle can be gradually formed along with the extension of the photoresist material in the second etching stage. It can be seen that, in the groove manufacturing method as described above, not only can the size of the formed groove (i.e., the size of the opening of the groove) be precisely controlled, but also the arc-shaped bottom corner can be automatically formed.
It should be noted that, although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.

Claims (14)

1. A method for preparing a groove with an arc-shaped bottom corner is characterized by comprising the following steps:
forming a photoresist layer on the layer to be etched, wherein a window with a first opening size is formed in the photoresist layer;
performing a plasma etching process to form a recess in the layer to be etched, comprising: sequentially consuming the layers to be etched exposed in the window through the window to form a groove with a first opening size in a first etching stage; the photoresist material of the photoresist layer gradually extends towards the center of the window, the size of the opening of the window is gradually reduced, so that the consumption of the bottom corner of the groove in the second etching stage is gradually increased from the edge of the groove to the center, and the bottom corner of the groove is modified into an arc shape.
2. The method according to claim 1, wherein an etching selectivity of the layer to be etched to the photoresist layer is 10 or more.
3. A method of forming a recess having arcuate base corners as claimed in claim 1 wherein said plasma etching process uses an etching gas comprising a fluoride gas.
4. A method of forming a recess having arcuate base angles as defined in claim 3 wherein said plasma etching process uses an etching gas further comprising: argon, oxygen and carbon monoxide.
5. A method of forming a recess having arcuate base corners as claimed in claim 1 wherein during the plasma etch process, etchant is deposited on the top surface of the photoresist layer until the second etch step deforms the photoresist layer to extend toward the center of the window.
6. A method of forming a recess having arcuate base corners as claimed in claim 1 wherein said photoresist layer has a thickness of 2.8 μm or greater.
7. A method for producing a groove having an arcuate bottom corner as claimed in claim 1, wherein the depth of said groove is 2 μm or more.
8. A method for forming a recess having curved bottom corners as claimed in claim 1, wherein the material of said layer to be etched at least in a depth region corresponding to the bottom corners comprises silicon oxide.
9. A method of forming a recess having an arcuate base angle as set forth in claim 1, wherein the base angle of the recess formed at the first etching stage is a right angle.
10. The method of claim 1, wherein an etch stop layer is further formed on the bottom of the layer to be etched, and the plasma etching process is performed to stop etching at the etch stop layer.
11. A method of forming a MEMS microphone, comprising:
sequentially forming a first sacrificial layer, a vibrating membrane, a second sacrificial layer and a back plate on the front surface of the substrate;
forming a photoresist layer on the back surface of the substrate, wherein a window with a first opening size is formed in the photoresist layer; and the number of the first and second groups,
performing a plasma etching process to sequentially etch the substrate and the first sacrificial layer to form a back cavity, comprising: sequentially consuming the substrate and the first sacrificial layer exposed in the window through the window to form a groove with a first opening size at a first etching stage; the photoresist material of the photoresist layer gradually extends towards the center of the window, the size of the opening of the window is gradually reduced, so that the consumption of the bottom corner of the groove in the second etching stage is gradually increased from the edge of the groove to the center, and the bottom corner of the groove is modified into an arc shape to form the back cavity.
12. The method of forming the MEMS microphone of claim 11, wherein an etching selection ratio of the first sacrificial layer to the photoresist layer in the plasma etching process is 10 or more.
13. The method of forming a MEMS microphone as defined by claim 11 wherein the etching gas used in the plasma etching process comprises a fluorine-containing gas.
14. The method of forming a MEMS microphone as defined by claim 11 wherein the substrate is etched sequentially in the first etch stage and into the first sacrificial layer.
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Publication number Priority date Publication date Assignee Title
WO2023078137A1 (en) * 2021-11-05 2023-05-11 绍兴中芯集成电路制造股份有限公司 Preparation method for groove having arc-shaped base angle, and preparation method for mems microphone

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