CN113764511A - 具有动态载流子通道的低损耗超结igbt器件及其制造方法 - Google Patents
具有动态载流子通道的低损耗超结igbt器件及其制造方法 Download PDFInfo
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- CN113764511A CN113764511A CN202110875708.1A CN202110875708A CN113764511A CN 113764511 A CN113764511 A CN 113764511A CN 202110875708 A CN202110875708 A CN 202110875708A CN 113764511 A CN113764511 A CN 113764511A
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
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CN202110875708.1A CN113764511B (zh) | 2021-07-30 | 2021-07-30 | 具有动态载流子通道的低损耗超结igbt器件及其制造方法 |
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CN202110875708.1A CN113764511B (zh) | 2021-07-30 | 2021-07-30 | 具有动态载流子通道的低损耗超结igbt器件及其制造方法 |
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CN113764511A true CN113764511A (zh) | 2021-12-07 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116884996A (zh) * | 2023-09-08 | 2023-10-13 | 深圳芯能半导体技术有限公司 | 一种降低关断损耗的igbt芯片及其制作方法 |
Citations (9)
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---|---|---|---|---|
US20070272978A1 (en) * | 2006-05-23 | 2007-11-29 | Infineon Technologies Austria Ag | Semiconductor device including a vertical gate zone, and method for producing the same |
JP2013140885A (ja) * | 2012-01-05 | 2013-07-18 | Renesas Electronics Corp | Ie型トレンチゲートigbt |
CN108122964A (zh) * | 2017-12-22 | 2018-06-05 | 中国科学院微电子研究所 | 一种绝缘栅双极晶体管 |
CN108231865A (zh) * | 2016-12-22 | 2018-06-29 | 瑞萨电子株式会社 | 沟槽栅极igbt |
US20180286943A1 (en) * | 2017-04-03 | 2018-10-04 | Fuji Electric Co., Ltd. | Semiconductor device |
CN109065607A (zh) * | 2018-08-20 | 2018-12-21 | 电子科技大学 | 一种双极型功率半导体器件及其制备方法 |
US20190181136A1 (en) * | 2017-12-11 | 2019-06-13 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
CN110678988A (zh) * | 2017-05-29 | 2020-01-10 | 株式会社日立功率半导体 | 半导体装置 |
CN111146274A (zh) * | 2020-01-02 | 2020-05-12 | 杭州电子科技大学 | 一种碳化硅沟槽igbt结构及其制造方法 |
-
2021
- 2021-07-30 CN CN202110875708.1A patent/CN113764511B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070272978A1 (en) * | 2006-05-23 | 2007-11-29 | Infineon Technologies Austria Ag | Semiconductor device including a vertical gate zone, and method for producing the same |
JP2013140885A (ja) * | 2012-01-05 | 2013-07-18 | Renesas Electronics Corp | Ie型トレンチゲートigbt |
CN108231865A (zh) * | 2016-12-22 | 2018-06-29 | 瑞萨电子株式会社 | 沟槽栅极igbt |
US20180286943A1 (en) * | 2017-04-03 | 2018-10-04 | Fuji Electric Co., Ltd. | Semiconductor device |
CN110678988A (zh) * | 2017-05-29 | 2020-01-10 | 株式会社日立功率半导体 | 半导体装置 |
US20190181136A1 (en) * | 2017-12-11 | 2019-06-13 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
CN108122964A (zh) * | 2017-12-22 | 2018-06-05 | 中国科学院微电子研究所 | 一种绝缘栅双极晶体管 |
CN109065607A (zh) * | 2018-08-20 | 2018-12-21 | 电子科技大学 | 一种双极型功率半导体器件及其制备方法 |
CN111146274A (zh) * | 2020-01-02 | 2020-05-12 | 杭州电子科技大学 | 一种碳化硅沟槽igbt结构及其制造方法 |
Non-Patent Citations (1)
Title |
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何艳静等: "Temperature-Dependent Effect of Near-Interface Traps on SiC MOS Capacitance", 《CHINESE PHYSICS LETTERS》, vol. 35, no. 10, pages 1 - 4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116884996A (zh) * | 2023-09-08 | 2023-10-13 | 深圳芯能半导体技术有限公司 | 一种降低关断损耗的igbt芯片及其制作方法 |
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