CN113759187B - Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution - Google Patents

Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution Download PDF

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Publication number
CN113759187B
CN113759187B CN202110019645.XA CN202110019645A CN113759187B CN 113759187 B CN113759187 B CN 113759187B CN 202110019645 A CN202110019645 A CN 202110019645A CN 113759187 B CN113759187 B CN 113759187B
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temperature
crystal oscillator
frequency
thermocouple
incubator
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CN113759187A (en
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张艾艾
丁金德
孙巍
伍坚
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Datang Mobile Communications Equipment Co Ltd
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Datang Mobile Communications Equipment Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/003Environmental or reliability tests
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage

Abstract

The embodiment of the application provides a method, a device, a system, electronic equipment and a computer readable storage medium for detecting a frequency hopping failure of a crystal oscillator caused by wafer pollution, and relates to the technical field of wafer pollution detection. The method comprises the following steps: placing the crystal oscillator to be detected in an incubator, and attaching a thermocouple on the surface of the crystal oscillator; when the temperature of the incubator is the first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator; when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state; and determining whether the crystal oscillator has frequency hopping failure according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and the preset frequency offset range. The method provided by the embodiment of the application can be used for efficiently detecting the frequency hopping failure of the crystal oscillator without cutting and long-time heat preservation at a specific temperature point.

Description

Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution
Technical Field
The present application relates to the technical field of wafer contamination detection, and in particular, to a method, an apparatus, a system, an electronic device, and a storage medium for detecting a failure of frequency hopping of a wafer caused by wafer contamination.
Background
Crystal oscillators, i.e. crystal oscillators, utilize a crystal capable of mutually converting electric energy and mechanical energy to provide stable and accurate single-frequency oscillation in a resonance state, and are widely applied to clock circuits. The key indicator for measuring whether the crystal oscillator is qualified is the frequency stability of the crystal oscillator, however, the wafer pollution caused by the process of manufacturing the crystal oscillator can lead to the frequency instability of the crystal oscillator, and the frequency instability is particularly shown as frequency deviation or even frequency hopping failure. The serious pollution of the wafer can lead the room temperature frequency deviation of the crystal oscillator to be out of range or cause oscillation to stop, and the faults can be easily screened out in factory testing. When the pollution of some wafers is not serious, the crystal oscillator working normally at room temperature (25 ℃) is difficult to detect when leaving the factory, and flows into the market, so that the quality of products is seriously affected, and further, larger economic loss is caused.
At present, the detection method adopted for the crystal oscillator with the wafer pollution not serious is mainly to observe the crystal oscillator by adopting vision system equipment (a metallographic microscope, a scanning electron microscope and the like) after the crystal oscillator is subjected to slicing treatment so as to determine whether the wafer of the crystal oscillator has pollution or not. Since the crystal oscillator is destroyed after slicing and can not be used any more, the method is obviously a destructive detection method, is not suitable for production test and has low detection efficiency. In addition, the change of the crystal oscillator frequency along with the temperature is only tested at a specific temperature point, and cannot represent the frequency deviation condition in the whole temperature range, and the test is not comprehensive. In summary, the method of detecting the failure of the frequency hopping of the crystal oscillator caused by the wafer pollution in the prior art cannot be suitable for the production test of the crystal oscillator.
Disclosure of Invention
The purpose of the present application is to solve at least one of the above technical defects, and in particular to solve the technical defects in the prior art that the wafer is broken when the wafer is detected to be polluted, the test is incomplete, the detection efficiency is low, and the method cannot be applied to the production test of the wafer.
In a first aspect, a method for detecting frequency hopping failure of a crystal oscillator caused by wafer contamination is provided, wherein the crystal oscillator to be detected is placed in an incubator, and a thermocouple is attached to the surface of the crystal oscillator. The method comprises the following steps:
when the temperature of the incubator is the first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state;
and determining whether the crystal oscillator has frequency hopping failure according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and the preset frequency offset range.
In one possible implementation, when the temperature of the oven is the first temperature, acquiring the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator includes:
after the temperature of the incubator is the first temperature and is maintained for a first preset period of time, the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator are obtained.
In another possible implementation manner, determining whether the crystal oscillator has frequency hopping failure according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator, as well as the nominal frequency of the crystal oscillator and the preset frequency offset range includes:
obtaining the frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency offset exceeds a preset frequency offset range, determining that the crystal oscillator has frequency hopping failure.
In yet another possible implementation, the thermocouple is in thermal equilibrium, comprising:
the temperature collected by the thermocouple is the second temperature;
when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state, wherein the acquisition is stopped, and the method comprises the following steps:
and when the temperature of the incubator is adjusted to the second temperature, acquiring a temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the temperature acquired by the thermocouple is the second temperature.
In yet another possible implementation, the first temperature is at a high temperature value of the nominal crystal oscillator and the second temperature is at a low temperature value of the nominal crystal oscillator; or alternatively, the process may be performed,
and when the first temperature is a low temperature value of the crystal oscillator nominal, the second temperature is a high temperature value of the crystal oscillator nominal.
In a second aspect, there is provided a device for detecting failure of frequency hopping of a crystal oscillator caused by wafer contamination, wherein the crystal oscillator to be detected is placed in an incubator, and a thermocouple is attached to a surface of the crystal oscillator, the device comprising:
the acquisition module is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is the first temperature, and acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to the second temperature until the thermocouple is in a thermal balance state;
and the judging module is used for determining whether the crystal oscillator has frequency hopping failure according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and the preset frequency offset range.
In one possible implementation manner, the judging module is specifically configured to determine whether the crystal oscillator has a frequency hopping failure according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator, and the nominal frequency and the preset frequency offset range of the crystal oscillator:
obtaining the frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency offset exceeds a preset frequency offset range, determining that the crystal oscillator has frequency hopping failure.
In a third aspect, a system for detecting failure of frequency hopping of a crystal caused by wafer contamination is provided, comprising: the oven, the frequency meter and the detection device as shown in the second aspect, wherein the crystal oscillator to be detected is placed in the oven, and a thermocouple is attached to the surface of the crystal oscillator;
the crystal oscillator, the frequency meter and the detection device are connected in sequence, and the frequency meter is used for collecting the frequency of the crystal oscillator and transmitting the frequency of the crystal oscillator to the detection device;
the thermocouple is connected with the detection device and used for transmitting the acquired temperature to the detection device;
the detection device is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is the first temperature, and acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to the second temperature until the thermocouple is in a thermal balance state; and determining whether the crystal oscillator has frequency hopping failure according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and the preset frequency offset range.
In a fourth aspect, there is provided an electronic device comprising:
a processor; and
a memory configured to store machine readable instructions that, when executed by a processor, cause the processor to perform a method of detecting a failure of frequency hopping of a crystal by wafer contamination as shown in the first aspect.
In a fifth aspect, there is provided a computer readable storage medium having stored thereon a computer program, wherein the computer program when executed by a processor implements the method for detecting a failure of frequency hopping of a crystal by wafer contamination as in the first aspect.
The application provides a method for detecting frequency hopping failure of a crystal oscillator caused by wafer pollution, which comprises the steps of placing the crystal oscillator to be detected, to which a thermocouple is attached, in an incubator, adjusting the temperature of the incubator, acquiring a series of temperatures acquired by the thermocouple and corresponding frequencies of the crystal oscillator at a preset frequency in the natural temperature change process, and determining whether the crystal oscillator has the frequency hopping failure according to the acquired temperatures and corresponding frequencies, the nominal frequency of the crystal oscillator and a preset frequency offset range, so as to determine whether the crystal oscillator has the wafer pollution. According to the method, the crystal oscillator is placed in the incubator instead of being sliced, so that nondestructive, comprehensive and efficient detection of the crystal oscillator can be realized, and the method can be effectively applied to production test of the crystal oscillator, and further the technical defects that damage, incomplete test and low detection efficiency are caused by slicing the crystal oscillator and the method cannot be suitable for production test of the crystal oscillator when the crystal oscillator is detected to be polluted or not in the prior art are overcome.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments of the present application will be briefly described below.
FIG. 1 is a diagram of a quartz resonant frequency in the related art;
fig. 2 is a flow chart of a method for detecting a frequency hopping failure of a wafer caused by wafer contamination according to an embodiment of the present application;
FIG. 3 is a graph of temperature versus frequency for an embodiment of the present application;
FIG. 4 is a graph of an abnormal relationship between temperature and frequency variation provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of a detection device for frequency hopping failure of a wafer caused by wafer contamination according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a detection system for frequency hopping failure of a wafer caused by wafer contamination according to an embodiment of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for the purpose of illustrating the present application and are not to be construed as limiting the invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
At present, a crystal oscillator with less serious wafer pollution is detected by adopting a detection method mainly through observing visual system equipment (a metallographic microscope, a scanning electron microscope and the like) after slicing the crystal oscillator so as to determine whether the crystal oscillator has wafer pollution. The specific method for testing the frequency temperature stability comprises the following steps:
1. after the crystal oscillator is preheated and aged, the crystal oscillator is placed in an incubator, the temperature is adjusted to be low (the lower limit of the nominal temperature range of the crystal oscillator), the crystal oscillator is kept at constant temperature for a period of time, generally 30 minutes, and the crystal oscillator frequency fd is measured.
2. Then the temperature is adjusted to room temperature (25 ℃), the temperature is kept for a period of time, generally 30 minutes, and the crystal oscillator frequency fs is measured.
3. Finally, the temperature is adjusted to be high (the upper limit of the nominal temperature range of the crystal oscillator), the crystal oscillator is kept at constant temperature for a period of time, generally 30min, and the crystal oscillator frequency fg is measured.
4. And calculating the temperature stability by using the following formula, and judging that the crystal oscillator is qualified when the temperature stability of the crystal oscillator is within the nominal range of the crystal oscillator and the temperature stability of the crystal oscillator are within the nominal range of the crystal oscillator.
(fd-fs)/f0……(1)
(fg-fs)/f0……(2)
Where f0 is the nominal frequency.
In the test method, the crystal oscillator is damaged after slicing and cannot be used any more, and obviously, the method is a destructive test method, is not suitable for production test and has low test efficiency. In addition, the change of the crystal oscillator frequency along with the temperature is only tested at individual temperature points (low temperature, room temperature and high temperature), and cannot represent the frequency deviation condition in the whole temperature range, and the test is not comprehensive.
In view of this, the embodiment of the application proposes a method, a device and a system for detecting the frequency hopping failure of a crystal oscillator caused by wafer pollution, by placing a crystal oscillator to be detected, to which a thermocouple is attached, in an incubator, adjusting the temperature of the incubator, acquiring a series of temperatures acquired by the thermocouple and corresponding frequencies of the crystal oscillator at a predetermined frequency in the natural temperature change process, and determining whether the crystal oscillator has the frequency hopping failure according to the acquired temperatures and corresponding frequencies, the nominal frequency of the crystal oscillator and a preset frequency offset range.
The following explains the principle of a method for detecting a failure of frequency hopping of a crystal caused by wafer contamination according to an embodiment of the present application:
in addition to the fundamental frequency, the crystal oscillator also has third-order overtones, fifth-order overtones and some spurious signals, i.e. parasitic modes, as shown in fig. 1 (the quartz resonance in fig. 1 is the crystal oscillator). The crystal oscillator always selects the strongest mode to work in the application process, and some spurious signal interference modes have the characteristic of rapid rising and falling frequency-along with temperature variation. Thus, when the temperature changes, at a certain temperature, the frequency of the parasitic mode coincides with the contaminant oscillation frequency, resulting in "modal coupling". Upon modal coupling, excitation of the parasitic modes causes additional energy consumption of the resonator, resulting in a decrease in Q value, an increase in equivalent series impedance, and a change in oscillator frequency. Wherein modal coupling caused by wafer contamination causes frequency hopping failure of the crystal oscillator. Therefore, the embodiment of the application is based on the principle, and whether the crystal oscillator has frequency hopping failure or not is detected.
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
It is to be understood that the following detailed description may be combined with each other and that the same or similar concepts or processes may not be described in detail in some embodiments.
In order to ensure the temperature stability of the crystal oscillator frequency in a full temperature range (namely, all temperature values between the maximum nominal temperature and the minimum nominal temperature of the crystal oscillator, including the maximum temperature and the minimum temperature), eliminate the crystal oscillator with frequency hopping failure caused by wafer pollution, and have higher detection efficiency, the method can be applied to factory detection of the crystal oscillator, and in the embodiment of the application, a method for detecting the frequency hopping failure of the crystal oscillator caused by wafer pollution is provided, the crystal oscillator to be detected is placed in an incubator, and a thermocouple is attached to the surface of the crystal oscillator, as shown in fig. 2, and the method comprises the following steps:
s101, when the temperature of the incubator is the first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
the crystal oscillator to be detected in the embodiment of the application is sealed and mounted on the PCBA. In this embodiment, the first temperature may be the highest or lowest temperature of the crystal oscillator.
S102, when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state;
when the first temperature is a high temperature value of the crystal oscillator nominal, the second temperature is a low temperature value of the crystal oscillator nominal; when the first temperature is a low temperature value of the crystal oscillator nominal, the second temperature is a high temperature value of the crystal oscillator nominal;
wherein, a certain temperature difference is arranged between the first temperature and the second temperature.
S103, determining whether the crystal oscillator has frequency hopping failure according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and the preset frequency offset range.
In this embodiment, the crystal oscillator to be detected may be connected to a frequency meter outside the oven, and the frequency of the crystal oscillator may be acquired by the frequency meter.
The detection method provided by the embodiment of the application does not need to split and destroy the crystal oscillator, so that the detection method is a nondestructive detection method, and a series of temperatures collected by the thermocouple and corresponding frequencies of the crystal oscillator are obtained at preset frequencies in the natural temperature change process so as to detect whether the crystal oscillator has frequency hopping failure or not, so that the detection method can realize high-efficiency detection without long-time heat preservation at a specific temperature point and can be widely applied to production tests of the crystal oscillator.
It should be noted that, in this embodiment, if the first temperature is a high temperature value of the nominal crystal oscillator and the second temperature is a low temperature value of the nominal crystal oscillator, then the whole test process is performed during the natural cooling process of the temperatures; if the first temperature is the nominal low temperature value of the crystal oscillator and the second temperature is the nominal high temperature value of the crystal oscillator, the whole test process is performed in the process of naturally rising the temperature. The temperature naturally rises or naturally cools, and the temperature naturally changes, so that long-time heat preservation at a specific temperature point is not needed, and the test is more efficient.
In some implementations of the embodiments of the present application, S101 may specifically include:
after the temperature of the incubator is the first temperature and is maintained for a first preset period of time, the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator are obtained.
Wherein, the temperature of the incubator is set to a first temperature and maintained for a first preset period of time in order to allow the thermocouple to reach thermal equilibrium. The thermal balance is specifically the temperature collected by the thermocouple is the first temperature.
For example, first, the temperature of the incubator is fixed at the highest nominal temperature of the crystal oscillator (for example, the nominal specification temperature of the crystal oscillator is-40 ℃ to 85 ℃, the first temperature can be 85 ℃, the temperature of the incubator is set to 85 ℃) and the incubator is kept for a first preset period (for example, half an hour, at the moment, the temperature collected by the thermocouple is 85 ℃), then, recording of the temperature collected by the thermocouple and the frequency data of the crystal oscillator at the corresponding temperature collected by the frequency meter is started, and at least one group of data is recorded.
In other implementations of the examples of this application, the thermocouple being in thermal equilibrium includes:
the temperature collected by the thermocouple is the second temperature;
wherein S102 specifically may include:
and when the temperature of the constant temperature box is adjusted to the second temperature, acquiring a temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator acquired by the frequency meter at a preset frequency until the temperature acquired by the thermocouple is the second temperature.
That is, when the temperature of the oven is set to the second temperature, the temperature of the thermocouple needs to be changed from the first temperature to the second temperature, and during this change, the temperature and the corresponding frequency are collected at a predetermined frequency until the temperature of the thermocouple reaches the second temperature.
For example, after the thermocouple reaches thermal equilibrium at the first temperature of the oven and records at least one set of data, the temperature of the oven is adjusted to a second temperature (if the nominal specification temperature of the crystal oscillator is-40 ℃ C. To 85 ℃ C., the second temperature may be-40 ℃ C., then the temperature of the oven should be set to-40 ℃ C.) and maintained, the temperature and corresponding frequency are collected at a predetermined frequency, for example: the temperature and corresponding frequency were collected at a frequency of 60 times for 1 minute until the temperature collected by the thermocouple and the temperature of the oven again reached thermal equilibrium (i.e., the temperature collected by the thermocouple was equal to-40 ℃) and stabilized at that temperature, at which point the collection of temperature and frequency could be stopped.
It should be noted that, the temperature and frequency may also be collected during the natural temperature rising process:
firstly, fixing the temperature of an incubator at the nominal lowest temperature (for example, -40 ℃) of a crystal oscillator, keeping a first preset time period, starting to record the temperature collected by a thermocouple and the frequency data of the crystal oscillator at the corresponding temperature collected by a frequency meter, and recording at least one group of data; after the thermocouple reaches thermal equilibrium at-40 ℃ and at least one set of data is recorded, the temperature of the oven is adjusted to 85 ℃ and maintained, and the temperature and corresponding frequency are collected at a predetermined frequency, for example: the temperature and corresponding frequency were collected at a frequency of 60 times for 1 minute until the temperature collected by the thermocouple and the temperature of the oven again reached thermal equilibrium (i.e., the temperature collected by the thermocouple was 85 ℃) and stabilized at that temperature, at which point the collection of temperature and frequency could be stopped.
Therefore, in the above scheme of the embodiment of the present application, multiple sets of data (temperatures and frequencies corresponding to the temperatures) in the whole temperature range (from the first temperature to the second temperature) can be obtained, so that the test is more comprehensive, and the judgment result of the subsequent frequency hopping failure is more accurate.
In another implementation manner of the embodiment of the present application, S103 may specifically include:
s1031 (not shown), obtaining the frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
the frequency difference between the corresponding frequency of a certain temperature of the crystal oscillator and the nominal frequency of the crystal oscillator can be calculated, and the ratio of the frequency difference to the nominal frequency of the crystal oscillator (the ratio can be the concentration of the frequency change percentage in percentage) is taken as the frequency offset of the crystal oscillator corresponding to the temperature.
For example, the temperature collected by the thermocouple is 40 ℃, the corresponding frequency of the crystal oscillator measured by the frequency meter is 25.001HZ, the nominal frequency of the crystal oscillator is 25HZ, and then the frequency offset of the corresponding crystal oscillator is (25.001-25)/25=40 ppm.
S1032 (not shown), when the frequency offset exceeds the preset frequency offset range, it is determined that the crystal oscillator has a frequency hopping failure.
For example, the predetermined frequency offset range may be [ -10ppm,10ppm ], i.e.: when the frequency deviation corresponding to a certain temperature is more than-10 ppm and less than 10ppm, determining that the crystal oscillator has no frequency hopping failure; otherwise, the crystal oscillator has frequency hopping failure.
In the above example, the frequency offset of the crystal oscillator corresponding to 40 ℃ is 40ppm, and if the frequency offset is not within the preset offset range, it is determined that the crystal oscillator to be detected has frequency hopping failure, that is, the wafer of the crystal oscillator to be detected has pollution, and the crystal oscillator cannot be shipped.
In another implementation manner of the embodiment of the present application, after S103, the method further includes:
when the crystal oscillator has frequency hopping failure, determining that the crystal oscillator has wafer pollution.
When the crystal oscillator has frequency hopping failure, the crystal oscillator can be determined to have wafer pollution, and the crystal oscillator is an unqualified crystal oscillator and cannot leave a factory; when the crystal oscillator does not have frequency hopping failure, it can be determined that the crystal oscillator does not have wafer pollution, or the frequency deviation of the crystal oscillator caused by the wafer pollution is within an allowable range and does not influence the normal operation of the crystal oscillator.
In other implementations of the embodiments of the present application, after acquiring the data of the plurality of sets of temperatures and frequencies between the first temperature and the second temperature, the method may further include:
all acquired temperatures acquired by thermocouples and frequency offsets of crystal oscillators corresponding to the temperatures are plotted as a graph, for example: fitting into a curve can make the test result more visual.
Each crystal oscillator has a rated frequency offset range, and the frequency offset in the full temperature range is not out of the rated frequency offset range (the frequency offset is generally required to be within tens of ppm) under normal conditions, and the frequency offset range is regarded as abnormal. For example, fig. 3 shows a graph obtained by testing a normal crystal oscillator, which is smooth and free of a sudden rise or a sudden fall, while fig. 4 shows a graph obtained by testing an abnormal contaminated crystal oscillator, which shows a sudden change.
An embodiment of the present application provides a detection apparatus 20 for failure of frequency hopping of a crystal caused by wafer contamination, as shown in fig. 5, the detection apparatus 20 may include: the device comprises an acquisition module 201 and a judgment module 202, wherein a crystal oscillator to be detected is placed in an incubator, and a thermocouple is attached to the surface of the crystal oscillator.
The acquisition module 201 is configured to acquire the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is the first temperature, and further configured to acquire the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a predetermined frequency when the temperature of the incubator is adjusted to the second temperature, until the thermocouple is in a thermal equilibrium state;
the judging module 202 is configured to determine whether the crystal oscillator has a frequency hopping failure according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator, and the nominal frequency and the preset frequency offset range of the crystal oscillator.
In some implementations of the embodiments of the present application, the obtaining module 201 is specifically configured to, when the temperature of the incubator is the first temperature, obtain the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator:
after the temperature of the incubator is the first temperature and is maintained for a first preset period of time, the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator are obtained.
In other implementations of the embodiments of the present application, the determining module 202 is specifically configured to, when determining whether the crystal oscillator has a frequency hopping failure according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator, and the nominal frequency and the preset frequency offset range of the crystal oscillator:
obtaining the frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency offset exceeds a preset frequency offset range, determining that the crystal oscillator has frequency hopping failure.
In other implementations of the examples of this application, the thermocouple being in thermal equilibrium includes:
the temperature collected by the thermocouple is the second temperature;
the obtaining module 201 obtains the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator at a predetermined frequency when the temperature of the incubator is adjusted to the second temperature, until the thermocouple is in a thermal equilibrium state, specifically for:
and when the temperature of the incubator is adjusted to the second temperature, acquiring a temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the temperature acquired by the thermocouple is the second temperature.
In other implementations of the embodiments of the present application, the first temperature is at a high temperature value of the nominal crystal oscillator and the second temperature is at a low temperature value of the nominal crystal oscillator; or alternatively
And when the first temperature is a low temperature value of the crystal oscillator nominal, the second temperature is a high temperature value of the crystal oscillator nominal.
According to the detection device, a series of temperatures collected by the thermocouples and corresponding frequencies of the crystal oscillator are obtained through the preset frequencies, whether the crystal oscillator fails in frequency hopping is judged according to the obtained temperatures and corresponding frequencies, the nominal frequency of the crystal oscillator and the preset frequency offset range, slicing damage to the crystal oscillator is not needed, nondestructive and comprehensive detection of the crystal oscillator can be achieved, and detection efficiency is high.
The present embodiments also provide a system 30 for detecting failure of frequency hopping of a crystal caused by wafer contamination. As shown in fig. 6, includes: the crystal oscillator 301 to be detected is placed in the incubator 304, a thermocouple 302 is attached to the surface of the crystal oscillator 301, and the crystal oscillator 301 is attached to the PCBA 303;
the crystal oscillator 301, the frequency meter 305 and the detection device 306 are sequentially connected, and the frequency meter 305 is used for collecting the frequency of the crystal oscillator 301 and transmitting the frequency of the crystal oscillator 301 to the detection device 306;
the thermocouple 302 is connected with the detection device 306 and is used for transmitting the acquired temperature to the detection device 306;
a detecting device 306, configured to acquire the temperature acquired by the thermocouple 302 and the corresponding frequency of the crystal oscillator when the temperature of the incubator 304 is the first temperature, and acquire the temperature acquired by the thermocouple 302 and the corresponding frequency of the crystal oscillator 301 at a predetermined frequency when the temperature of the incubator 304 is adjusted to the second temperature, until the thermocouple 302 is in a thermal equilibrium state; based on the temperature collected by the thermocouple 302 and the corresponding frequency of the crystal oscillator 301, as well as the nominal frequency of the crystal oscillator 301 and a preset frequency offset range, it is determined whether the crystal oscillator 301 has a frequency hopping failure.
The detecting device 306 is specifically a detecting device 20 for frequency hopping failure caused by wafer contamination in the embodiment of the present application.
The detection device 306 in the detection system 30 for failure of frequency hopping of a crystal caused by wafer contamination provided in the embodiments of the present application may be used to perform the detection method for failure of frequency hopping of a crystal caused by wafer contamination provided in any of the alternative embodiments of the present application.
The detection system in the embodiment of the application integrates an incubator, a frequency meter, a detection device, a crystal oscillator to be detected and a thermocouple attached to the surface of the crystal oscillator. The temperature collected by the thermocouple and the frequency collected by the frequency meter are sent to the detection device 306, and whether the crystal oscillator fails in frequency hopping is determined by the detection device 306.
According to the detection system, the temperature of the crystal oscillator is collected through the thermocouple in the natural temperature change process of the crystal oscillator, the corresponding frequency of the crystal oscillator is collected through the frequency meter, the collected frequency and the temperature are transmitted to the detection device, and whether the crystal oscillator has frequency hopping failure or not is determined according to the temperature, the corresponding frequency, the nominal frequency of the crystal oscillator and the preset frequency offset range of the crystal oscillator. In the testing process, the crystal oscillator is not required to be broken, so that nondestructive and comprehensive detection of the crystal oscillator can be realized, and the detection efficiency is high.
According to one or more embodiments of the present application, there is provided an electronic device including:
a processor; and
a memory configured to store machine-readable instructions that, when executed by the processor, cause the processor to perform the method shown in any alternative implementation of one or more embodiments of the present application.
According to one or more embodiments of the present application, there is provided a computer readable medium having stored thereon a computer program which, when executed by a processor, implements a method as shown in any of the alternative implementations of one or more embodiments of the present application.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the flowcharts of the figures may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily being sequential, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
The foregoing is only a partial embodiment of the present invention, and it should be noted that it will be apparent to those skilled in the art that modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.

Claims (9)

1. A method for detecting failure of frequency hopping of a crystal oscillator caused by wafer contamination, characterized in that the crystal oscillator to be detected is placed in an incubator, a thermocouple is attached to a surface of the crystal oscillator, the method comprising:
when the temperature of the incubator is the first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state;
determining whether the crystal oscillator has frequency hopping failure according to whether the frequency offset of the crystal oscillator corresponding to a certain temperature acquired by the thermocouple meets a preset frequency offset range;
when the first temperature is a high temperature value of the crystal oscillator nominal, the second temperature is a low temperature value of the crystal oscillator nominal; or alternatively, the process may be performed,
and when the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator.
2. The method of claim 1, wherein said obtaining the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the oven is a first temperature comprises:
and after the temperature of the incubator is the first temperature and is maintained for a first preset time period, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator.
3. The method of claim 1, wherein determining whether the crystal oscillator has a frequency hopping failure based on whether a frequency offset of the crystal oscillator corresponding to a temperature acquired by the thermocouple is satisfied comprises:
and when the frequency offset of the crystal oscillator corresponding to a certain temperature acquired by the thermocouple exceeds the preset frequency offset range, determining that the crystal oscillator has frequency hopping failure.
4. The method of claim 1, wherein the thermocouple is in thermal equilibrium, comprising:
the temperature collected by the thermocouple is the second temperature;
when the temperature of the incubator is adjusted to a second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the thermocouple is in a thermal equilibrium state, wherein the steps of:
and when the temperature of the incubator is adjusted to the second temperature, acquiring a temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency until the temperature acquired by the thermocouple is the second temperature.
5. A device for detecting failure of frequency hopping of a crystal oscillator caused by wafer contamination, characterized in that the crystal oscillator to be detected is placed in an incubator, a thermocouple is attached to a surface of the crystal oscillator, the device comprising:
the acquisition module is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is the first temperature, and acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to the second temperature until the thermocouple is in a thermal balance state;
the judging module is used for determining whether the crystal oscillator has frequency hopping failure according to whether the frequency offset of the crystal oscillator corresponding to a certain temperature acquired by the thermocouple meets a preset frequency offset range;
when the first temperature is a high temperature value of the crystal oscillator nominal, the second temperature is a low temperature value of the crystal oscillator nominal; or alternatively, the process may be performed,
and when the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator.
6. The apparatus of claim 5, wherein the determination module is specifically configured to determine that the crystal oscillator has a frequency hopping failure when a frequency offset of the crystal oscillator corresponding to a certain temperature collected by the thermocouple exceeds the preset frequency offset range.
7. A system for detecting failure of frequency hopping of a crystal caused by contamination of a crystal wafer, comprising: the detection device according to claim 5 or 6, wherein a crystal oscillator to be detected is placed in the incubator, and a thermocouple is attached to the surface of the crystal oscillator;
the crystal oscillator, the frequency meter and the detection device are connected in sequence, and the frequency meter is used for collecting the frequency of the crystal oscillator and transmitting the frequency of the crystal oscillator to the detection device;
the thermocouple is connected with the detection device and used for transmitting the acquired temperature to the detection device;
the detection device is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is the first temperature, and acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to the second temperature until the thermocouple is in a thermal balance state; determining whether the crystal oscillator has frequency hopping failure according to whether the frequency offset of the crystal oscillator corresponding to a certain temperature acquired by the thermocouple meets a preset frequency offset range;
when the first temperature is a high temperature value of the crystal oscillator nominal, the second temperature is a low temperature value of the crystal oscillator nominal; or alternatively, the process may be performed,
and when the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator.
8. An electronic device, the electronic device comprising:
a processor; and
a memory configured to store machine readable instructions that, when executed by the processor, cause the processor to perform the method of detecting a failure of frequency hopping of a crystal by wafer contamination of any one of claims 1-4.
9. A computer-readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the method for detecting a failure of frequency hopping of a crystal oscillation caused by contamination of a crystal wafer according to any one of claims 1 to 4.
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