CN113759187A - Method, device and system for detecting frequency hopping failure of crystal oscillator caused by wafer pollution - Google Patents
Method, device and system for detecting frequency hopping failure of crystal oscillator caused by wafer pollution Download PDFInfo
- Publication number
- CN113759187A CN113759187A CN202110019645.XA CN202110019645A CN113759187A CN 113759187 A CN113759187 A CN 113759187A CN 202110019645 A CN202110019645 A CN 202110019645A CN 113759187 A CN113759187 A CN 113759187A
- Authority
- CN
- China
- Prior art keywords
- temperature
- crystal oscillator
- frequency
- thermocouple
- acquiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/003—Environmental or reliability tests
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The embodiment of the application provides a method, a device and a system for detecting frequency hopping failure of a crystal oscillator caused by wafer pollution, electronic equipment and a computer readable storage medium, and relates to the technical field of wafer pollution detection. The method comprises the following steps: placing a crystal oscillator to be detected in a constant temperature box, wherein a thermocouple is attached to the surface of the crystal oscillator; when the temperature of the constant temperature box is a first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator; when the temperature of the constant temperature box is adjusted to a second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the thermocouple is in a thermal balance state; and determining whether the crystal oscillator has frequency hopping failure or not according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range. The method provided by the embodiment of the application can efficiently detect the frequency hopping failure of the crystal oscillator under the conditions of no need of splitting and no need of long-time heat preservation at a specific temperature point.
Description
Technical Field
The application relates to the technical field of wafer pollution detection, in particular to a method, a device, a system, electronic equipment and a storage medium for detecting frequency hopping failure of a crystal oscillator caused by wafer pollution.
Background
A crystal oscillator, i.e., a crystal oscillator, provides stable and accurate single-frequency oscillation in a resonance state by using a crystal that can convert electrical energy and mechanical energy into each other, and is widely used in clock circuits. The key index for determining whether the crystal oscillator is qualified is the frequency stability of the crystal oscillator, but the frequency of the crystal oscillator is unstable due to wafer contamination introduced by the process of manufacturing the crystal oscillator, which is embodied as frequency offset and even frequency hopping failure. The serious pollution of the wafer can cause the deviation of the room temperature frequency of the crystal oscillator to exceed the range or cause the oscillation to stop, and the faults are easy to be screened out in factory test. When the pollution of some wafers is not serious, the crystal oscillator which normally works at room temperature (25 ℃) is difficult to detect when leaving the factory, and the crystal oscillator flows into the market, so that the product quality is seriously influenced, and further great economic loss is brought.
At present, the crystal oscillator with the wafer not seriously polluted adopts a detection method that the crystal oscillator is sliced and observed by adopting a visual system device (a metallographic microscope, a scanning electron microscope and the like) so as to determine whether the wafer of the crystal oscillator is polluted or not. Since the crystal oscillator is destroyed after being split and can not be used, obviously, the method is a destructive detection method, is not suitable for production test and has low detection efficiency. In addition, the variation of the crystal oscillator frequency along with the temperature is only tested at individual temperature points, and the frequency deviation condition in the whole temperature range cannot be represented, so the test is not comprehensive. In summary, the method for detecting the frequency hopping failure of the crystal oscillator caused by the wafer contamination in the prior art is not suitable for the production test of the crystal oscillator.
Disclosure of Invention
The present application aims to solve at least one of the above technical defects, and particularly to solve the technical defects of the prior art, such as damage, incomplete test, low detection efficiency, and inapplicability to production test of a crystal oscillator, caused by splitting the crystal oscillator when detecting whether the crystal oscillator has wafer contamination.
In a first aspect, a method for detecting frequency hopping failure of a crystal oscillator caused by wafer contamination is provided, wherein the crystal oscillator to be detected is placed in an incubator, and a thermocouple is attached to the surface of the crystal oscillator. The method comprises the following steps:
when the temperature of the constant temperature box is a first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
when the temperature of the constant temperature box is adjusted to a second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the thermocouple is in a thermal balance state;
and determining whether the crystal oscillator has frequency hopping failure or not according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
In one possible implementation, when the temperature of the oven is the first temperature, acquiring the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator includes:
and after the temperature of the constant temperature box is the first temperature and is maintained for the first preset time, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator.
In another possible implementation manner, determining whether the frequency hopping failure of the crystal oscillator exists according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range includes:
obtaining the frequency deviation of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency deviation exceeds a preset frequency deviation range, determining that the crystal oscillator has frequency hopping failure.
In yet another possible implementation, the thermocouple is in a thermal equilibrium state, including:
the temperature collected by the thermocouple is a second temperature;
wherein, when the temperature of thermostated container is adjusted to the second temperature, obtain the corresponding frequency of temperature and crystal oscillator gathered by the thermocouple with the predetermined frequency, stop obtaining when the thermocouple is in the thermal equilibrium state, include:
and when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the temperature acquired by the thermocouple is the second temperature.
In yet another possible implementation manner, when the first temperature is a nominal high temperature value of the crystal oscillator, the second temperature is a nominal low temperature value of the crystal oscillator; alternatively, the first and second electrodes may be,
when the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator.
In a second aspect, there is provided an apparatus for detecting a frequency hopping failure of a crystal oscillator caused by contamination of a wafer, wherein the crystal oscillator to be detected is placed in an oven, and a thermocouple is attached to a surface of the crystal oscillator, the apparatus comprising:
the acquisition module is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is a first temperature, and is also used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to a second temperature, and the acquisition is stopped until the thermocouple is in a thermal balance state;
and the judging module is used for determining whether the frequency hopping failure exists in the crystal oscillator according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
In a possible implementation manner, the determining module is specifically configured to determine whether the crystal oscillator has a frequency hopping failure according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator, and a preset frequency offset range, and to:
obtaining the frequency deviation of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency deviation exceeds a preset frequency deviation range, determining that the crystal oscillator has frequency hopping failure.
In a third aspect, a system for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination is provided, comprising: the device comprises a constant temperature box, a frequency meter and a detection device as shown in the second aspect, wherein a crystal oscillator to be detected is placed in the constant temperature box, and a thermocouple is attached to the surface of the crystal oscillator;
the crystal oscillator, the frequency meter and the detection device are sequentially connected, and the frequency meter is used for acquiring the frequency of the crystal oscillator and transmitting the frequency of the crystal oscillator to the detection device;
the thermocouple is connected with the detection device and used for transmitting the acquired temperature to the detection device;
the detection device is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is a first temperature, and acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to a second temperature until the thermocouple is in a thermal balance state; and determining whether the crystal oscillator has frequency hopping failure or not according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
In a fourth aspect, an electronic device is provided, which includes:
a processor; and
a memory configured to store machine readable instructions which, when executed by the processor, cause the processor to perform a method of detecting crystal oscillator frequency hopping failure caused by wafer contamination as shown in the first aspect.
In a fifth aspect, a computer-readable storage medium is provided, on which a computer program is stored, wherein the computer program, when executed by a processor, implements the method for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination as shown in the first aspect.
The application provides a method for detecting frequency hopping failure of a crystal oscillator caused by wafer pollution, wherein the crystal oscillator to be detected attached with a thermocouple is placed in a thermostat, the temperature of the thermostat is adjusted, a series of temperatures collected by the thermocouple and corresponding frequencies of the crystal oscillator are obtained at preset frequencies in the natural temperature change process, and whether the frequency hopping failure exists in the crystal oscillator is determined according to the obtained temperatures and the corresponding frequencies, the nominal frequency of the crystal oscillator and the preset frequency offset range, so that whether the wafer pollution exists in the crystal oscillator is determined. The method can realize the nondestructive, comprehensive and efficient detection of the crystal oscillator by placing the crystal oscillator in the thermostat instead of slicing the crystal oscillator, thereby being effectively applied to the production test of the crystal oscillator, and solving the technical defects of damage, incomplete test and low detection efficiency caused by slicing the crystal oscillator when detecting whether the crystal oscillator has wafer pollution in the prior art and being not suitable for the production test of the crystal oscillator.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments of the present application will be briefly described below.
FIG. 1 is a diagram illustrating a resonant frequency of a quartz crystal according to a related art;
fig. 2 is a schematic flowchart illustrating a method for detecting a frequency hopping failure of a crystal oscillator caused by a wafer contamination according to an embodiment of the present disclosure;
FIG. 3 is a graph of the normal relationship between temperature and frequency variation provided by an embodiment of the present application;
FIG. 4 is a graph illustrating an abnormal relationship between temperature and frequency according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of an apparatus for detecting a frequency hopping failure of a crystal oscillator caused by a wafer contamination according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a system for detecting a frequency hopping failure of a crystal oscillator caused by a wafer contamination according to an embodiment of the present disclosure.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
At present, the crystal oscillator which does not seriously pollute the wafer is detected by adopting a detection method which mainly comprises the steps of splitting the crystal oscillator and observing the crystal oscillator by adopting a visual system device (a metallographic microscope, a scanning electron microscope and the like) so as to determine whether the crystal oscillator has the wafer pollution condition. The specific frequency temperature stability testing method comprises the following steps:
1. after the crystal oscillator is preheated and aged, the crystal oscillator is placed in a constant temperature box, the temperature is adjusted to a low temperature (the lower limit of the nominal temperature range of the crystal oscillator), the crystal oscillator is placed at a constant temperature for a period of time, generally 30min, and the frequency fd of the crystal oscillator is measured.
2. Then the temperature is adjusted to room temperature (25 ℃), the mixture is placed for a period of time, generally 30min, and the crystal oscillation frequency fs is measured.
3. And finally, adjusting the temperature to a high temperature (the upper limit of the nominal temperature range of the crystal oscillator), standing for a period of time at a constant temperature, generally 30min, and measuring the frequency fg of the crystal oscillator.
4. And (3) calculating the temperature stability by using the following formula, and judging that the crystal oscillator is qualified when (1) and (2) are both in a nominal range.
(fd-fs)/f0……(1)
(fg-fs)/f0……(2)
Where f0 is the nominal frequency.
In the above test method, since the crystal oscillator is destroyed after being sliced and cannot be used any more, it is obvious that the method is a destructive test method, is not suitable for production test, and has low test efficiency. In addition, the variation of the crystal oscillator frequency with the temperature is only tested at individual temperature points (low temperature, room temperature and high temperature), and the frequency deviation condition in the whole temperature range cannot be represented, so the test is not comprehensive.
In view of this, the embodiment of the present application provides a method, an apparatus, and a system for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination, in which a to-be-detected crystal oscillator with a thermocouple attached thereto is placed in an incubator, the temperature of the incubator is adjusted, a series of temperatures acquired by the thermocouple and corresponding frequencies of the crystal oscillator are obtained at a predetermined frequency in a natural temperature variation process, and whether the frequency hopping failure of the crystal oscillator exists is determined according to the obtained temperatures and corresponding frequencies, a nominal frequency of the crystal oscillator, and a preset frequency offset range.
The following explains the principle of a method for detecting the frequency hopping failure of the crystal oscillator caused by the contamination of the wafer according to the embodiment of the present application:
in addition to the fundamental frequency, the crystal oscillator also has third-order harmonics, fifth-order harmonics, and some spurious signals, i.e., spurious modes, as shown in fig. 1 (the quartz resonator in fig. 1 is a crystal oscillator). The crystal oscillator always selects the strongest mode to work in the application process, and some spurious signal interference modes have the characteristics of steeply rising and falling frequency-the frequency of which changes along with the temperature. Thus, when the temperature changes, the frequency of the parasitic mode coincides with the contaminant oscillation frequency at a certain temperature, resulting in "modal coupling". In modal coupling, excitation of parasitic modes causes additional energy consumption of the resonator, resulting in a decrease in Q value, an increase in equivalent series impedance and a change in oscillator frequency. Wherein modal coupling caused by wafer contamination causes frequency hopping failure of the crystal oscillator. Therefore, the embodiment of the application is based on the principle, and whether the frequency hopping failure occurs to the crystal oscillator is detected.
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
It is to be understood that the following detailed description may be combined with other embodiments, and that the same or similar concepts or processes may not be repeated in some embodiments.
In order to ensure that the temperature stability of the crystal oscillator frequency is guaranteed in a full temperature range (namely all temperature values between the maximum temperature and the minimum temperature of the crystal oscillator nominal, including the maximum temperature and the minimum temperature), eliminate the crystal oscillator with frequency hopping failure caused by wafer pollution, have higher detection efficiency, and can be applied to factory detection of the crystal oscillator, the embodiment of the application provides a method for detecting the frequency hopping failure of the crystal oscillator caused by the wafer pollution, the crystal oscillator to be detected is placed in a thermostat, and a thermocouple is attached to the surface of the crystal oscillator, as shown in fig. 2, the method comprises the following steps:
s101, when the temperature of the constant temperature box is a first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
the crystal oscillator to be detected in the embodiment of the application is sealed and is attached to the PCBA. In this embodiment, the first temperature may be a nominal maximum or minimum temperature of the crystal oscillator.
S102, when the temperature of the thermostat is adjusted to a second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the thermocouple is in a thermal balance state;
when the first temperature is the nominal high temperature value of the crystal oscillator, the second temperature is the nominal low temperature value of the crystal oscillator; when the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator;
wherein, the first temperature and the second temperature are separated by a certain temperature difference.
S103, determining whether the crystal oscillator has frequency hopping failure or not according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
In the embodiment, the crystal oscillator to be detected can be connected with a frequency meter outside the incubator, and the frequency of the crystal oscillator is obtained through the frequency meter.
The detection method provided by the embodiment of the application does not need to split the crystal oscillator to be damaged, so that the method is a nondestructive detection method, and a series of temperatures acquired by the thermocouple and corresponding frequencies of the crystal oscillator are acquired at preset frequencies in the natural temperature change process to detect whether the frequency hopping failure exists in the crystal oscillator, so that the high-efficiency detection can be realized without long-time heat preservation at a specific temperature point, and the method can be widely applied to the production test of the crystal oscillator.
It should be noted that, in this embodiment, if the first temperature is a nominal high temperature value of the crystal oscillator, and the second temperature is a nominal low temperature value of the crystal oscillator, the whole testing process is performed during the natural cooling process of the temperature; if the first temperature is the nominal low temperature value of the crystal oscillator and the second temperature is the nominal high temperature value of the crystal oscillator, the whole testing process is carried out in the process of natural temperature rise. The processes of natural temperature rise or natural cooling are processes of natural temperature change, and long-time heat preservation at a specific temperature point is not needed, so that the test is more efficient.
In some implementations of the embodiments of the present application, S101 may specifically include:
and after the temperature of the constant temperature box is the first temperature and is maintained for the first preset time, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator.
The temperature of the thermostat is set to be the first temperature and is maintained for the first preset time, so that the thermocouple is in thermal balance. The thermal equilibrium is specifically that the temperature collected by the thermocouple is the first temperature.
For example, first, the temperature of the oven is fixed at the nominal highest temperature of the crystal oscillator (for example, if the nominal specification temperature of the crystal oscillator is-40 ℃ to 85 ℃, the first temperature can be 85 ℃, the temperature of the oven is set to 85 ℃), after the temperature is kept for a first preset time (for example, half an hour, at this time, the temperature collected by the thermocouple is 85 ℃), the temperature collected by the thermocouple and the frequency data of the crystal oscillator at the corresponding temperature are collected by the frequency meter, and at least one set of data is recorded.
In other implementations of embodiments of the present application, the thermocouple being in thermal equilibrium includes:
the temperature collected by the thermocouple is a second temperature;
wherein, S102 may specifically include:
and when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator acquired by the frequency meter at a preset frequency, and stopping acquiring until the temperature acquired by the thermocouple is the second temperature.
That is, when the temperature of the oven is set to the second temperature, the temperature of the thermocouple needs to be changed from the first temperature to the second temperature, and in this change, the temperature and the corresponding frequency are collected at a predetermined frequency until the temperature of the thermocouple reaches the second temperature.
For example, after the thermocouple reaches thermal equilibrium at the first temperature of the oven and records at least one set of data, the temperature of the oven is maintained after being adjusted to a second temperature (e.g., the nominal specification temperature of the crystal oscillator is-40 ℃ to 85 ℃, the second temperature may be-40 ℃, and the temperature of the oven should be set to-40 ℃), and the temperature and corresponding frequency are collected at a predetermined frequency, such as: the temperature and the corresponding frequency are collected at a frequency of 60 times in 1 minute until the temperature collected by the thermocouple and the temperature of the oven again reach thermal equilibrium (i.e. the temperature collected by the thermocouple is equal to-40 ℃) and stabilize at this temperature, at which point the collection of temperature and frequency can be stopped.
It should be noted that the temperature and frequency can also be collected during the natural temperature rise:
firstly, fixing the temperature of an incubator at the nominal lowest temperature (for example-40 ℃) of a crystal oscillator, keeping the incubator for a first preset time, starting to record the temperature collected by a thermocouple and the frequency data of the crystal oscillator at the corresponding temperature collected by a frequency meter, and recording at least one group of data; after the thermocouple reached thermal equilibrium at-40 ℃ in the oven and recorded at least one set of data, the temperature of the oven was adjusted to 85 ℃ and maintained, the temperature and corresponding frequency being collected at a predetermined frequency, for example: the temperature and corresponding frequency are collected at a frequency of 60 times in 1 minute until the temperature collected by the thermocouple and the temperature of the incubator again reach thermal equilibrium (i.e., the temperature collected by the thermocouple is 85 deg.c) and stabilize at that temperature, at which point the collection of temperature and frequency may be stopped.
Therefore, in the above-mentioned scheme of the embodiment of the present application, multiple sets of data (temperature and corresponding frequency) in the whole temperature range (from the first temperature to the second temperature) can be obtained, so that the test is more comprehensive, and the subsequent frequency hopping failure determination result is more accurate.
In another implementation manner of the embodiment of the present application, S103 may specifically include:
s1031 (not shown), obtaining a frequency shift of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, and the nominal frequency of the crystal oscillator;
the frequency difference between the corresponding frequency of a certain temperature of the crystal oscillator and the nominal frequency of the crystal oscillator can be calculated, and the ratio of the frequency difference to the nominal frequency of the crystal oscillator (the ratio can be the concentration per million of the percentage change in frequency) is used as the frequency offset of the crystal oscillator corresponding to the temperature.
For example, if the temperature measured by the thermocouple is 40 ℃, and the corresponding frequency of the crystal oscillator measured by the frequency meter at this temperature is 25.001HZ, and the nominal frequency of the crystal oscillator is 25HZ, then the corresponding frequency offset of the crystal oscillator is (25.001-25)/25-40 ppm.
S1032 (not shown), when the frequency offset exceeds the preset frequency offset range, determining that the crystal oscillator has a frequency hopping failure.
For example, the predetermined frequency offset range may be [ -10ppm, 10ppm ], i.e.: when the frequency deviation corresponding to a certain temperature is more than-10 ppm and less than 10ppm, determining that the crystal oscillator has no frequency hopping failure; otherwise, the crystal oscillator has frequency hopping failure.
In the above example, if the frequency offset of the crystal oscillator corresponding to 40 ℃ is 40ppm and is not within the preset offset range, it is determined that the frequency hopping failure of the crystal oscillator to be detected exists, that is, the wafer of the crystal oscillator to be detected is contaminated and cannot be shipped from a factory.
In another implementation manner of the embodiment of the present application, after S103, the method further includes:
and when the crystal oscillator has frequency hopping failure, determining that the crystal oscillator has wafer pollution.
When the frequency hopping failure of the crystal oscillator exists, the crystal oscillator can be determined to have wafer pollution, and the crystal oscillator is unqualified and cannot leave a factory; when the crystal oscillator does not have frequency hopping failure, the crystal oscillator is determined to have no wafer pollution, or the frequency deviation of the crystal oscillator caused by the wafer pollution is within an allowable range and does not influence the normal work of the crystal oscillator.
In other embodiments of the present application, after acquiring multiple sets of temperature and frequency data between the first temperature and the second temperature, the method may further include:
plotting all the acquired temperatures collected by the thermocouples and the frequency offsets of the crystal oscillators corresponding thereto as graphs, for example: and the curve is fitted, so that the test result is more visual.
Each crystal oscillator has a rated frequency offset range, the frequency offset does not exceed the rated frequency offset range (generally, the frequency offset is required to be within dozens of ppm) in the whole temperature range under normal conditions, and the frequency offset exceeding the range is regarded as abnormal. For example, fig. 3 shows a graph obtained by testing a normal crystal oscillator, which is smooth and has no abrupt height or low height, while a graph obtained by testing an abnormally contaminated crystal oscillator, which is shown in fig. 4, has abrupt changes.
The embodiment of the present application provides a device 20 for detecting a frequency hopping failure of a crystal oscillator caused by a wafer contamination, as shown in fig. 5, the device 20 may include: the method comprises an acquisition module 201 and a judgment module 202, wherein a crystal oscillator to be detected is placed in a thermostat, and a thermocouple is attached to the surface of the crystal oscillator.
An obtaining module 201, configured to obtain the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is a first temperature, and further obtain the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator at a predetermined frequency when the temperature of the incubator is adjusted to a second temperature, where the obtaining is stopped until the thermocouple is in a thermal equilibrium state;
the judging module 202 is configured to determine whether the frequency hopping failure of the crystal oscillator exists according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator, and a preset frequency offset range.
In some embodiments of the embodiment of the present application, when the temperature of the oven is the first temperature, the obtaining module 201 is specifically configured to, when the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator are obtained:
and after the temperature of the constant temperature box is the first temperature and is maintained for the first preset time, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator.
In other embodiments of the embodiment of the present application, the determining module 202 is specifically configured to, when determining whether the frequency hopping failure of the crystal oscillator exists according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator, and the preset frequency offset range:
obtaining the frequency deviation of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency deviation exceeds a preset frequency deviation range, determining that the crystal oscillator has frequency hopping failure.
In other implementations of embodiments of the present application, the thermocouple being in thermal equilibrium includes:
the temperature collected by the thermocouple is a second temperature;
wherein, when the temperature of acquiring module 201 at the thermostated container is adjusted to the second temperature, obtain the temperature of gathering by the thermocouple and the corresponding frequency of crystal oscillator with the predetermined frequency, when stopping obtaining when the thermocouple is in the thermal balance state, specifically be used for:
and when the temperature of the incubator is adjusted to the second temperature, acquiring the temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the temperature acquired by the thermocouple is the second temperature.
In other embodiments of the present application, when the first temperature is a nominal high temperature value of the crystal oscillator, the second temperature is a nominal low temperature value of the crystal oscillator; or
When the first temperature is the nominal low temperature value of the crystal oscillator, the second temperature is the nominal high temperature value of the crystal oscillator.
The detection device provided by the embodiment of the application judges whether the frequency hopping of the crystal oscillator is invalid or not according to the acquired temperature and the corresponding frequency, the nominal frequency of the crystal oscillator and the preset frequency offset range by acquiring a series of temperatures acquired by the thermocouple and the corresponding frequency of the crystal oscillator at the preset frequency, and the crystal oscillator is not required to be broken into pieces, so that the crystal oscillator can be detected nondestructively and comprehensively, and the detection efficiency is high.
The embodiment of the present application further provides a system 30 for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination. As shown in fig. 6, includes: the device comprises a constant temperature box 304, a frequency meter 305 and a detection device 306, wherein a crystal oscillator 301 to be detected is placed in the constant temperature box 304, a thermocouple 302 is attached to the surface of the crystal oscillator 301, and the crystal oscillator 301 is attached to a PCBA 303;
the crystal oscillator 301, the frequency meter 305 and the detection device 306 are sequentially connected, and the frequency meter 305 is used for collecting the frequency of the crystal oscillator 301 and transmitting the frequency of the crystal oscillator 301 to the detection device 306;
thermocouple 302 is connected to detection device 306 for transmitting the collected temperature to detection device 306;
a detecting device 306, configured to obtain the temperature collected by the thermocouple 302 and the corresponding frequency of the crystal oscillator when the temperature of the incubator 304 is a first temperature, obtain the temperature collected by the thermocouple 302 and the corresponding frequency of the crystal oscillator 301 at a predetermined frequency when the temperature of the incubator 304 is adjusted to a second temperature, and stop obtaining until the thermocouple 302 is in a thermal equilibrium state; and determining whether the frequency hopping failure of the crystal oscillator 301 exists according to the temperature collected by the thermocouple 302 and the corresponding frequency of the crystal oscillator 301, as well as the nominal frequency of the crystal oscillator 301 and a preset frequency offset range.
The detecting device 306 is embodied as the detecting device 20 for detecting the frequency hopping failure caused by the wafer contamination according to the embodiment of the present application.
The detection device 306 in the system 30 for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination according to the embodiment of the present application can be used to execute a method for detecting a frequency hopping failure of a crystal oscillator caused by wafer contamination according to any optional embodiment of the present application.
The detection system in the embodiment of the application integrates a thermostat, a frequency meter, a detection device, a crystal oscillator to be detected and a thermocouple attached to the surface of the crystal oscillator. The temperature collected by the thermocouple and the frequency collected by the frequency meter are sent to the detection device 306, and whether the frequency hopping of the crystal oscillator is failed is determined through the detection device 306.
The detection system of this application embodiment, the temperature of crystal oscillator is gathered through the thermocouple in the temperature natural variation process of crystal oscillator, and the corresponding frequency of crystal oscillator is gathered through the frequency meter to frequency and temperature transmission to detection device with gathering, detection device confirms whether there is frequency hopping inefficacy crystal oscillator according to temperature and corresponding frequency to and the nominal frequency and the frequency offset range of presetting of crystal oscillator. The crystal oscillator is not required to be sliced and damaged in the test process, so that the nondestructive and comprehensive detection of the crystal oscillator can be realized, and the detection efficiency is high.
According to one or more embodiments of the present application, there is provided an electronic device including:
a processor; and
a memory configured to store machine readable instructions that, when executed by the processor, cause the processor to perform the method shown in any one of the alternative implementations in one or more embodiments of the present application.
According to one or more embodiments of the present application, there is provided a computer-readable medium on which a computer program is stored, the computer program, when executed by a processor, implementing the method shown in any of the alternative implementations of one or more embodiments of the present application.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and may be performed in other orders unless explicitly stated herein. Moreover, at least a portion of the steps in the flow chart of the figure may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The foregoing is only a partial embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for detecting frequency hopping failure of a crystal oscillator caused by wafer pollution is characterized in that the crystal oscillator to be detected is placed in a constant temperature box, a thermocouple is attached to the surface of the crystal oscillator, and the method comprises the following steps:
when the temperature of the constant temperature box is a first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator;
when the temperature of the constant temperature box is adjusted to a second temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the thermocouple is in a thermal equilibrium state;
and determining whether the crystal oscillator has frequency hopping failure or not according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
2. The method of claim 1, wherein the obtaining the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the oven is the first temperature comprises:
and after the temperature of the constant temperature box is a first temperature and is maintained for a first preset time, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator.
3. The method according to claim 1, wherein the determining whether the crystal oscillator has the frequency hopping failure according to the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator, and the nominal frequency of the crystal oscillator and a preset frequency offset range comprises:
obtaining the frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, the corresponding frequency of the crystal oscillator and the nominal frequency of the crystal oscillator;
and when the frequency deviation exceeds the preset frequency deviation range, determining that the crystal oscillator has frequency hopping failure.
4. The method of claim 1, wherein the thermocouple is in thermal equilibrium, comprising:
the temperature collected by the thermocouple is the second temperature;
wherein, when the temperature of the incubator is adjusted to a second temperature, acquiring the temperature collected by the thermocouple and the corresponding frequency of the crystal oscillator at a predetermined frequency, and stopping acquiring until the thermocouple is in a thermal equilibrium state, includes:
and when the temperature of the incubator is adjusted to a second temperature, acquiring the temperature change value from the first temperature to the second temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency, and stopping acquiring until the temperature acquired by the thermocouple is the second temperature.
5. The method according to any one of claims 1-4, wherein:
when the first temperature is the nominal high temperature value of the crystal oscillator, the second temperature is the nominal low temperature value of the crystal oscillator; alternatively, the first and second electrodes may be,
and when the first temperature is the nominal low-temperature value of the crystal oscillator, the second temperature is the nominal high-temperature value of the crystal oscillator.
6. A detection device for crystal oscillator frequency hopping failure caused by wafer pollution is characterized in that a crystal oscillator to be detected is placed in a thermostat, a thermocouple is attached to the surface of the crystal oscillator, and the device comprises:
the acquisition module is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is a first temperature, and is also used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to a second temperature, and the acquisition is stopped until the thermocouple is in a thermal equilibrium state;
and the judging module is used for determining whether the frequency hopping failure exists in the crystal oscillator according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
7. The apparatus according to claim 6, wherein the determining module is specifically configured to obtain a frequency offset of the crystal oscillator corresponding to the temperature collected by the thermocouple according to the temperature collected by the thermocouple, a corresponding frequency of the crystal oscillator, and a nominal frequency of the crystal oscillator;
and when the frequency deviation exceeds the preset frequency deviation range, determining that the crystal oscillator has frequency hopping failure.
8. A system for detecting a frequency hopping failure of a crystal oscillator caused by contamination of a wafer, comprising: the detection device comprises an incubator, a frequency meter and the detection device according to claim 6 or 7, wherein a crystal oscillator to be detected is placed in the incubator, and a thermocouple is attached to the surface of the crystal oscillator;
the crystal oscillator, the frequency meter and the detection device are sequentially connected, and the frequency meter is used for collecting the frequency of the crystal oscillator and transmitting the frequency of the crystal oscillator to the detection device;
the thermocouple is connected with the detection device and is used for transmitting the acquired temperature to the detection device;
the detection device is used for acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator when the temperature of the incubator is a first temperature, acquiring the temperature acquired by the thermocouple and the corresponding frequency of the crystal oscillator at a preset frequency when the temperature of the incubator is adjusted to a second temperature, and stopping acquiring the temperature until the thermocouple is in a thermal equilibrium state; and determining whether the crystal oscillator has frequency hopping failure or not according to the temperature acquired by the thermocouple, the corresponding frequency of the crystal oscillator, the nominal frequency of the crystal oscillator and a preset frequency offset range.
9. An electronic device, characterized in that the electronic device comprises:
a processor; and
a memory configured to store machine readable instructions that, when executed by the processor, cause the processor to perform the method of detecting crystal oscillator frequency hopping failure caused by wafer contamination of any one of claims 1 to 5.
10. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements the method for detecting a failure of frequency hopping of a crystal oscillator caused by contamination of a wafer according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110019645.XA CN113759187B (en) | 2021-01-07 | 2021-01-07 | Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110019645.XA CN113759187B (en) | 2021-01-07 | 2021-01-07 | Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113759187A true CN113759187A (en) | 2021-12-07 |
| CN113759187B CN113759187B (en) | 2023-05-05 |
Family
ID=78786266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110019645.XA Active CN113759187B (en) | 2021-01-07 | 2021-01-07 | Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113759187B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719782A (en) * | 1993-10-22 | 1998-02-17 | Toyo Communication Equipment Co., Ltd. | Frequency measuring apparatus and frequency measuring method |
| CN101609126A (en) * | 2009-07-16 | 2009-12-23 | 东莞市大普通信技术有限公司 | The Auto-Test System of temperature compensating crystal oscillator |
| CN102096426A (en) * | 2010-12-14 | 2011-06-15 | 西安工业大学 | Device and method for searching quick start heating control curve of constant temperature crystal oscillator |
| CN103105530A (en) * | 2013-01-08 | 2013-05-15 | 河北远东通信系统工程有限公司 | Detection method for frequency hopping changes of crystal oscillator |
| CN103107774A (en) * | 2013-01-07 | 2013-05-15 | 河北远东通信系统工程有限公司 | Method capable of improving constant temperature crystal oscillator frequency stability |
| CN103713218A (en) * | 2013-12-27 | 2014-04-09 | 广东大普通信技术有限公司 | Crystal oscillator temperature characteristic automatic measuring method and system |
| US20160109496A1 (en) * | 2014-10-20 | 2016-04-21 | Fujitsu Limited | Measurement method and measurement system |
-
2021
- 2021-01-07 CN CN202110019645.XA patent/CN113759187B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719782A (en) * | 1993-10-22 | 1998-02-17 | Toyo Communication Equipment Co., Ltd. | Frequency measuring apparatus and frequency measuring method |
| CN101609126A (en) * | 2009-07-16 | 2009-12-23 | 东莞市大普通信技术有限公司 | The Auto-Test System of temperature compensating crystal oscillator |
| CN102096426A (en) * | 2010-12-14 | 2011-06-15 | 西安工业大学 | Device and method for searching quick start heating control curve of constant temperature crystal oscillator |
| CN103107774A (en) * | 2013-01-07 | 2013-05-15 | 河北远东通信系统工程有限公司 | Method capable of improving constant temperature crystal oscillator frequency stability |
| CN103105530A (en) * | 2013-01-08 | 2013-05-15 | 河北远东通信系统工程有限公司 | Detection method for frequency hopping changes of crystal oscillator |
| CN103713218A (en) * | 2013-12-27 | 2014-04-09 | 广东大普通信技术有限公司 | Crystal oscillator temperature characteristic automatic measuring method and system |
| US20160109496A1 (en) * | 2014-10-20 | 2016-04-21 | Fujitsu Limited | Measurement method and measurement system |
Non-Patent Citations (1)
| Title |
|---|
| 国家技术监督局: "《GB/T12273-1996》", 9 September 1996 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113759187B (en) | 2023-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Blum et al. | Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime | |
| KR100933001B1 (en) | Group management system, semiconductor manufacturing apparatus, information processing method and recording medium having program thereon | |
| WO2012060883A2 (en) | Power grid failure prediction and detection | |
| CN113759187B (en) | Method, device and system for detecting frequency hopping failure of crystal oscillation caused by wafer pollution | |
| JP4697879B2 (en) | Server apparatus and program | |
| Ng et al. | Stability measurements of silicon MEMS resonant thermometers | |
| CN111830007B (en) | Method and system for measuring gallium vacancy concentration of gallium nitride material | |
| Colombier et al. | High-pressure transport and microcalorimetry studies on high quality YbCu 2 Si 2 single crystals | |
| TWI790474B (en) | Wafer manufacturing system | |
| Tao et al. | Surface acoustic wave based wireless and passive sensors | |
| CN111207862B (en) | High-precision pressure measurement method applied to bridge overload and rollover early warning | |
| US8262794B2 (en) | Lithium niobate wafers with narrow distribution of surface acoustic wave properties | |
| CN115032513B (en) | Quartz crystal oscillator frequency micro-jump detection method based on piecewise polynomial modeling error | |
| Krempl et al. | Temperature sensors based on GaPO/sub 4 | |
| Yang et al. | Temperature dependence of torsional and flexural modes in 6H-SiC microdisk resonators | |
| US20230194630A1 (en) | Method for evaluating the degradation level of capacitors of a power filter, adjustable speed drive and power converter provided for performing the method | |
| CN116735023B (en) | Self-calibration thermometer based on crystal dual-mode resonant frequency | |
| CN102914698B (en) | Method for measuring resistance loss of measuring circuit of crystal oscillating wafer of crystal control instrument | |
| Bouřa et al. | Wirelessly powered high-temperature strain measuring probe based on piezoresistive nanocrystalline diamond layers | |
| CN219103936U (en) | Silicon wafer thickness measuring device and silicon wafer sorting machine | |
| CN212988621U (en) | Motor temperature detection device | |
| CN116582102B (en) | Method for improving packaging technology of quartz crystal resonator | |
| CN113343520B (en) | Method, system, equipment and storage medium for improving temperature stability of silicon-based resonant sensor | |
| CN113029348B (en) | Surface temperature field information acquisition method | |
| Gadjanova et al. | Single point calibration and investigations of thermosensitivity, thermal response time and long term stability of quartz temperature sensors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |