CN102914698B - Method for measuring resistance loss of measuring circuit of crystal oscillating wafer of crystal control instrument - Google Patents
Method for measuring resistance loss of measuring circuit of crystal oscillating wafer of crystal control instrument Download PDFInfo
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- CN102914698B CN102914698B CN201210425445.5A CN201210425445A CN102914698B CN 102914698 B CN102914698 B CN 102914698B CN 201210425445 A CN201210425445 A CN 201210425445A CN 102914698 B CN102914698 B CN 102914698B
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Abstract
The invention provides a circuit and a method for measuring the resistance loss of a crystal oscillating wafer of a crystal control instrument and relates to the technical field of crystal control instruments. The invention solves the technical problem about measurement on the resistance loss of the crystal oscillating wafer. In the circuit, a microprocessor controls a sinusoidal signal generator to output a sine wave test signal to the crystal oscillating wafer to be measured; the oscillating amplitude of the crystal oscillating wafer to be measured under the sine wave test signals of different frequency is measured by the microprocessor and normalized; and the resistance loss of the crystal oscillating wafer is calculated. The circuit and the method provided by the invention can be used for checking the loop status of a crystal oscillating probe of the crystal control instrument, the mounting quality of the crystal oscillating wafer, the exchange time of the crystal oscillating wafer and the like.
Description
Technical field
The present invention relates to brilliant control instrument technology, particularly relate to a kind of crystalline substance control crystal-vibration-chip resistance loss metering circuit of instrument and the technology of measuring method thereof.
Background technology
Brilliant control film-thickness monitoring is the vacuum coating process controller utilizing the relation between the resonance frequency of quartz wafer and thicknesses of layers to carry out controlling diaphragm layer thickness, pop one's head in primarily of the crystal oscillator with quartz wafer, and for measuring the crystal oscillator frequency metering circuit of quartz wafer resonance frequency, for controlling the film speed control circuit composition of plated film speed, oscillator is provided with in crystal oscillator frequency metering circuit, crystal oscillator probe is arranged in the vacuum chamber of vacuum coating equipment, and a side surface of the quartz wafer on crystal oscillator probe is exposed to the top of evaporation source.
Carrying out in vacuum coating process to sample strip, coating materials can be deposited in quartz wafer and sample strip, the resonance frequency of quartz wafer can reduce along with coating materials deposition, brilliant control film-thickness monitoring utilizes crystal oscillator frequency metering circuit to measure the resonance frequency change of quartz wafer, according to the transformational relation of resonance frequency and thicknesses of layers, draw depositional coating thickness, and depositional coating is at not thickness difference in the same time, coating materials rate of sedimentation can be obtained, and then controlled the power of evaporation source by pid algorithm, to obtain the stable rate of sedimentation being tending towards design speed.Because quartz crystal slice is in a band frequency variation range, linear relationship is changing into thicknesses of layers, make brilliant control film-thickness monitoring relative to other film thickness monitoring methods (such as optics control methods), the rate of sedimentation of quartz wafer plated film of being more convenient for controls, therefore brilliant control film-thickness monitoring one of standard control instrument becoming vacuum coating equipment gradually.
For crystalline substance control instrument, crystal-vibration-chip frequency and change thereof are the foundations that thickness calculates, and frequency measurement is the core of all crystalline substance control instrument.The raw data that current conventional brilliant control instrument provides also is only limitted to oscillation frequency, and other parameters for crystal-vibration-chip do not provide.The crystal-vibration-chip that brilliant control instrument uses, be generally AT cutting mode, have good frequency-temperature characteristic near normal temperature, its acoustic oscillations is thickness shearing mode.In vacuum coating process, in order to ensure the temperature stabilization of crystal-vibration-chip, probe position needs logical chilled water.
In vacuum coating control procedure, because crystal-vibration-chip temperature is lower, especially do not have ion gun to assist or the thermal evaporation film forming procedure of low rate, therefore the rete roughness of crystal-vibration-chip surface deposition is comparatively large, and short texture, stress is large.Crystal-vibration-chip internal acoustic shear oscillation wave traveling, to the loose of crystal-vibration-chip surface or when having crackle rete, have larger oscillation energy loss, crystal-vibration-chip Q value can be caused to reduce, and electrical equivalent resistance becomes large.This loss is larger, and the resonance frequency stability of crystal-vibration-chip is lower, even no longer vibrates; The resonance frequency instability reaction of crystal-vibration-chip is that speed is unstable in the consequence controlled the coating materials rate of sedimentation of vacuum coating, and crystal-vibration-chip nonoscillatory then can cause controlling to lose efficacy to the coating materials rate of sedimentation of vacuum coating.Thisly become the instability brought greatly due to crystal-vibration-chip own loss, make brilliant control instrument be difficult to proceed authentic and valid speed and control.In addition, when this speed wild effect occurs, the thickness record on brilliant control instrument also will be difficult to accurately.This should be avoided in the application of crystalline substance control instrument as far as possible.
In vacuum coating film forming procedure, the reason that brilliant control speed shakiness occurs is more, and the change of crystal-vibration-chip own loss is only one of them is greatly the most fatal also, because in this case, brilliant control instrument thickness record is also inaccurate, and does not have repeatability.The situations such as the processing of crystal oscillator probe is bad, electrode fouling, installation is bad, bad, the new crystal-vibration-chip surface of cable failure, crystal-vibration-chip is polluted also can not get effecting reaction on the crystalline substance control instrument only having frequency measurement, also do not measure the effective ways of crystal-vibration-chip loss at present.
Summary of the invention
For the defect existed in above-mentioned prior art, technical matters to be solved by this invention is to provide one can measure crystal-vibration-chip resistance loss, avoids the coating materials rate of sedimentation caused because crystal-vibration-chip loss is large to control crystal-vibration-chip resistance loss metering circuit and the measuring method thereof of the crystalline substance control instrument that wild effect occurs.
In order to solve the problems of the technologies described above, the crystal-vibration-chip resistance loss metering circuit of a kind of crystalline substance control instrument provided by the present invention, relate to crystal-vibration-chip to be measured, it is characterized in that: this circuit comprises microprocessor, sinusoidal signal generator, and two voltage follow loops, described two voltage follow loops are respectively the first voltage follow loop, the second voltage follow loop;
Described microprocessor is provided with a control signal output terminal, a measuring-signal input end, and microprocessor-based control signal output part receives the control signal input end of sinusoidal signal generator;
The input end in described first voltage follow loop receives the signal output part of sinusoidal signal generator, and the output terminal in the first voltage follow loop receives the input end in the second voltage follow loop through a divider resistance;
The output terminal in described second voltage follow loop receives the measuring-signal input end of microprocessor successively through a commutating circuit, a filter circuit, a level translation loop, an analog to digital converter;
An electrical connection terminal ground connection of described crystal-vibration-chip to be measured, another electrical connection terminates to the input end in the second voltage follow loop.
Further, what described commutating circuit adopted is full-wave rectification loop.
Further, what described filter circuit adopted is low-pass filtering loop.
The measuring method of the crystal-vibration-chip resistance loss metering circuit of crystalline substance control instrument provided by the present invention, is characterized in that:
The crystal-vibration-chip to be measured crystalline substance being controlled instrument is separated with the circuit of crystalline substance control instrument, then the nominal resonant frequency value of crystal-vibration-chip to be measured is set as sweep frequency higher limit, and the value obtained after sweep frequency higher limit is deducted 1 megahertz is set as sweep frequency lower limit;
Microprocessor is utilized to export control signal to sinusoidal signal generator, make sinusoidal signal generator to crystal-vibration-chip sine wave output test signal to be measured, measure the oscillation amplitude of crystal-vibration-chip to be measured under different frequency sinusoidal test signal by microprocessor, and this is normalized;
The concrete steps of normalized are as follows:
1) oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency higher limit is measured, as the full range value of upper limiting frequency benchmark, measure the oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency lower limit, as the full range value of lower frequency limit benchmark;
2) calculate coefficient slope and the intercept of linear relationship between frequency and full amplitude, specific formula for calculation is:
D1= k×f1+b
D2= k×f2+b
Draw:
k = （D2-D1）/（f2-f1）
b = （f2×D1-f1×D2）/（f2-f1）
Wherein, D1 is the full range value of upper limiting frequency benchmark, and D2 is the full range value of lower frequency limit benchmark, and f1 is sweep frequency higher limit, and f2 is sweep frequency lower limit, and k is coefficient slope, and b is intercept;
3) set test frequency value, utilize the sinusoidal test signal that Microprocessor S3C44B0X sinusoidal signal generator output frequency value is consistent with test frequency value;
4) utilize microprocessor to measure crystal-vibration-chip to be measured oscillation amplitude when test frequency value, and according to actual measurement oscillation amplitude value, calculating the resistance loss of crystal-vibration-chip to be measured when test frequency value is:
Z = DS/D×100%
D= k×f+b
Wherein, Z is resistance loss, and DS is actual measurement oscillation amplitude value, and f is test frequency value.
The crystal-vibration-chip resistance loss metering circuit of crystalline substance control instrument provided by the invention and measuring method thereof, by applying the sinusoidal test signal of different frequency to crystal-vibration-chip, measure the oscillation amplitude of crystal-vibration-chip under different frequency sinusoidal test signal, and this is normalized, thus measure crystal-vibration-chip resistance loss, avoid the coating materials rate of sedimentation caused because crystal-vibration-chip loss is large to control wild effect to occur, the crystal oscillator probe circuit state checking brilliant control instrument can be used for, and the installation quality of crystal-vibration-chip, replacing opportunity of crystal-vibration-chip etc.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the crystal-vibration-chip resistance loss metering circuit of the crystalline substance control instrument of the embodiment of the present invention;
Fig. 2 is the circuit diagram of the crystal-vibration-chip resistance loss metering circuit of the crystalline substance control instrument of the embodiment of the present invention;
Fig. 3 is the crystal-vibration-chip resistance loss metering circuit of the crystalline substance control instrument of the embodiment of the present invention, is the quantitative calculating chart of reactance of the crystal-vibration-chip of 5.9995MHz to nominal resonant frequency.
Embodiment
Illustrate below in conjunction with accompanying drawing and be described in further detail embodiments of the invention, but the present embodiment is not limited to the present invention, every employing analog structure of the present invention and similar change thereof, all should list protection scope of the present invention in.
As shown in Figure 1, the crystal-vibration-chip resistance loss metering circuit of a kind of crystalline substance control instrument that the embodiment of the present invention provides, relate to crystal-vibration-chip X1 to be measured, it is characterized in that: this circuit comprises microprocessor U3, sinusoidal signal generator S1, and two voltage follow loops, described two voltage follow loops are respectively the first voltage follow loop U11, the second voltage follow loop U12;
Described microprocessor U3 is provided with a control signal output terminal, a measuring-signal input end, and the control signal output terminal of microprocessor U3 receives the control signal input end of sinusoidal signal generator S1;
The input end of described first voltage follow loop U11 receives the signal output part of sinusoidal signal generator S1, and the output terminal of the first voltage follow loop U11 receives the input end of the second voltage follow loop U12 through a divider resistance R6;
The output terminal of described second voltage follow loop U12 receives the measuring-signal input end of microprocessor U3 successively through a commutating circuit U13, a filter circuit U14, a level translation loop U15, an analog to digital converter U2;
An electrical connection terminal ground connection of described crystal-vibration-chip X1 to be measured, another electrical connection terminates to the input end of the second voltage follow loop U12.
In the embodiment of the present invention, described voltage follow loop, commutating circuit, filter circuit, level translation loop are prior art;
Fig. 2 measures the physical circuit that resonance frequency is the crystal-vibration-chip resistance loss of 5.9995MHz, in this circuit:
Voltage follow loop is made up of single operational amplifier, and wherein the first voltage follow loop is made up of single operational amplifier U1C, and the second voltage follow loop is made up of single operational amplifier U1D;
What commutating circuit adopted is by two operational amplifiers U1A, U1B, two diodes D1, D2, and the full-wave rectification loop that six resistance R1, R2, R31, R32, R4 are formed, wherein the resistance of R1, R2, R31, R32, R4 is the resistance of 500 Ω, R5 is 1k Ω;
Level conversion loop is made up of a gain resistor R5;
Filter circuit is the RC low-pass filtering loop be made up of a resistance R7, an electric capacity C1;
The input end of analog to digital converter U2 is provided with two protection diodes D3, D4, and the full scale of analog to digital converter U2 is 3.3V;
The normal phase input end of operational amplifier U1C connects the signal output part of sinusoidal signal generator S1, and the output terminal of operational amplifier U1C receives the normal phase input end of operational amplifier U1D through divider resistance R6;
An electrical connection terminal ground connection of crystal-vibration-chip X1 to be measured, another electrical connection terminates to the normal phase input end of operational amplifier U1D;
Vo, Vi, Vx in Fig. 2 are the voltage of three voltage data points in circuit, and the voltage of these three voltage data points has following relation:
Vo = -Vi×R5/R4 - Vx×R5/R3；
During Vi>0, D1 ends, D2 conducting, now Vx=-(R2/R1) Vi=-Vi, then Vo=Vi × R5/R4;
During Vi<0, D1 conducting, D2 ends, now Vx=0, then Vo=-Vi × R5/R4;
Vo value is the output gain in level conversion loop;
The object in level conversion loop makes the input terminal voltage maximal value of analog to digital converter U2 be no more than power supply voltage, for making full use of the resolving power of analog to digital converter U2, the input terminal voltage maximal value of analog to digital converter U2 should adjust in the half of supply voltage many.
In other embodiment of the present invention, described voltage follow loop, commutating circuit, filter circuit, level translation loop also can adopt other existing loop that can realize identical function to substitute.
The measuring method of the crystal-vibration-chip resistance loss metering circuit of the crystalline substance control instrument that the embodiment of the present invention provides, is characterized in that:
The crystal-vibration-chip to be measured crystalline substance being controlled instrument is separated with the circuit of crystalline substance control instrument, again the nominal resonant frequency value of crystal-vibration-chip to be measured is set as sweep frequency higher limit, the value obtained after sweep frequency higher limit is deducted 1 megahertz is set as sweep frequency lower limit, the nominal resonant frequency value of such as crystal-vibration-chip to be measured is 6 megahertzes, then sweep frequency higher limit is 6 megahertzes, and sweep frequency lower limit is 5 megahertzes;
Microprocessor is utilized to export control signal to sinusoidal signal generator, make sinusoidal signal generator sine wave output test signal, the sinusoidal test signal that sinusoidal signal generator exports is loaded on crystal-vibration-chip to be measured behind the first voltage follow loop and divider resistance, the resonance signal of crystal-vibration-chip to be measured is then through the second voltage follow loop, commutating circuit, filter circuit, behind level translation loop, digital signal input microprocessor is converted to by analog to digital converter, microprocessor is utilized to measure the oscillation amplitude of crystal-vibration-chip to be measured under different frequency sinusoidal test signal, and this is normalized,
The concrete steps of normalized are as follows:
1) oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency higher limit is measured, as the full range value of upper limiting frequency benchmark, measure the oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency lower limit, as the full range value of lower frequency limit benchmark;
2) calculate coefficient slope and the intercept of linear relationship between frequency and full amplitude, specific formula for calculation is:
D1= k×f1+b
D2= k×f2+b
Draw:
k = （D2-D1）/（f2-f1）
b = （f2×D1-f1×D2）/（f2-f1）
Wherein, D1 is the full range value of upper limiting frequency benchmark, and D2 is the full range value of lower frequency limit benchmark, and f1 is sweep frequency higher limit, and f2 is sweep frequency lower limit, and k is coefficient slope, and b is intercept;
3) set test frequency value, utilize the sinusoidal test signal that Microprocessor S3C44B0X sinusoidal signal generator output frequency value is consistent with test frequency value;
4) utilize microprocessor to measure crystal-vibration-chip to be measured oscillation amplitude when test frequency value, and according to actual measurement oscillation amplitude value, calculating the resistance loss of crystal-vibration-chip to be measured when test frequency value is:
Z = DS/D×100%
D= k×f+b
Wherein, Z is resistance loss, and DS is actual measurement oscillation amplitude value, and f is test frequency value, and when test frequency f equals the resonance frequency of crystal-vibration-chip, then Z value is exactly the true resistance loss of crystal-vibration-chip.
Fig. 3 is the quantitative calculating chart of reactance of the crystal-vibration-chip of 5.9995MHz to a nominal resonant frequency, and the transverse axis in this figure is frequency values axle, and the longitudinal axis is the reactance value axle of crystal-vibration-chip.
As can be seen from Figure 3, at series resonance frequency place, reactance is 0, the impedance of crystal-vibration-chip is purely resistive, and when slightly departing from nominal resonant frequency, no matter be low frequency or HFS, crystal-vibration-chip impedance presents larger capacitive reactance (being namely less than 0) all very soon, so at these non-nominal resonant frequency point places, because crystal-vibration-chip impedance is much larger than the resistance value of metering circuit upper end, the voltage drop be added in whole metering circuit drops on crystal-vibration-chip substantially, so the voltage amplitude that these Frequency points record also can use as the full amplitude 100% of normalized benchmark, and very large deviation can not be brought.
In the embodiment of the present invention, make linear relationship with the full amplitude of sweep frequency higher limit and these two scanning end dot frequencies of sweep frequency lower limit, other frequency place is full between amplitude operation values and measured value, and maximum deviation is less than 2%.Because resistance loss is a qualitative instrument, do not set up a complete corresponding quantitative relationship between resistance loss and the oscillatory stability of crystal-vibration-chip, having a small amount of deviation is allow.In addition, the resistance loss that this use percents is expressed, can the distribution of partial offset circuit components parameter and drift characteristic, and obtains good self-consistentency.Therefore the components and parts choice of metering circuit is also very large, can be easy to obtain.
Before crystalline substance control instrument dispatches from the factory in debugging, coefficient slope k and intercept b should be drawn, and it is kept at the parameter storage area of brilliant control instrument, during for normal work.
The R value of crystal-vibration-chip is less, then during resonance, the dividing potential drop in crystal-vibration-chip loop is also less, and namely resistance loss value is less, and along with the change of crystal-vibration-chip R value is large, resistance loss value also can become large.When crystalline substance control instrument works, if crystal-vibration-chip was close to losing efficacy (or install bad, now loss is very large), losing efficacy or loop open circuit, the resistance loss value of crystal-vibration-chip was close to 100%; If the short circuit of crystal-vibration-chip loop, then the resistance loss value of crystal-vibration-chip is close to 0%.
Loose contact when if crystal-vibration-chip is installed and between electrode, the resistance value that is then equivalent to have connected in resistance loss measuring circuit (can measure frequency in quite a few situation, namely frequency does not see problem), yes becomes large in this reaction in resistance loss value, the phenomenon of such crystal-vibration-chip also easy generation rate shakiness in actual film forming procedure, so resistance loss value also can regard whether crystal-vibration-chip installs one of good parameter as.
Claims (1)
1. the measuring method of the crystal-vibration-chip resistance loss metering circuit of a brilliant control instrument, this circuit comprises microprocessor, sinusoidal signal generator, and two voltage follow loops, described two voltage follow loops are respectively the first voltage follow loop, the second voltage follow loop;
Described microprocessor is provided with a control signal output terminal, a measuring-signal input end, and microprocessor-based control signal output part receives the control signal input end of sinusoidal signal generator;
The input end in described first voltage follow loop receives the signal output part of sinusoidal signal generator, and the output terminal in the first voltage follow loop receives the input end in the second voltage follow loop through a divider resistance;
The output terminal in described second voltage follow loop receives the measuring-signal input end of microprocessor successively through a commutating circuit, a filter circuit, a level translation loop, an analog to digital converter;
An electrical connection terminal ground connection of crystal-vibration-chip to be measured, another electrical connection terminates to the input end in the second voltage follow loop;
It is characterized in that, the measuring method of this circuit is as follows:
The crystal-vibration-chip to be measured crystalline substance being controlled instrument is separated with the circuit of crystalline substance control instrument, then the nominal resonant frequency value of crystal-vibration-chip to be measured is set as sweep frequency higher limit, and the value obtained after sweep frequency higher limit is deducted 1 megahertz is set as sweep frequency lower limit;
Microprocessor is utilized to export control signal to sinusoidal signal generator, make sinusoidal signal generator to crystal-vibration-chip sine wave output test signal to be measured, measure the oscillation amplitude of crystal-vibration-chip to be measured under different frequency sinusoidal test signal by microprocessor, and this is normalized;
The concrete steps of normalized are as follows:
1) oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency higher limit is measured, as the full range value of upper limiting frequency benchmark, measure the oscillation amplitude of crystal-vibration-chip to be measured when the frequency of sinusoidal test signal is sweep frequency lower limit, as the full range value of lower frequency limit benchmark;
2) calculate coefficient slope and the intercept of linear relationship between frequency and full amplitude, specific formula for calculation is:
D1= k×f1+b
D2= k×f2+b
Draw:
k = （D2-D1）/（f2-f1）
b = （f2×D1-f1×D2）/（f2-f1）
Wherein, D1 is the full range value of upper limiting frequency benchmark, and D2 is the full range value of lower frequency limit benchmark, and f1 is sweep frequency higher limit, and f2 is sweep frequency lower limit, and k is coefficient slope, and b is intercept;
3) set test frequency value, utilize the sinusoidal test signal that Microprocessor S3C44B0X sinusoidal signal generator output frequency value is consistent with test frequency value;
4) utilize microprocessor to measure crystal-vibration-chip to be measured oscillation amplitude when test frequency value, and according to actual measurement oscillation amplitude value, calculating the resistance loss of crystal-vibration-chip to be measured when test frequency value is:
Z = DS/（k×f+b）×100%
Wherein, Z is resistance loss, and DS is actual measurement oscillation amplitude value, and f is test frequency value.
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| CN1547036A (en) * | 2003-12-01 | 2004-11-17 | 中国科学技术大学 | Ferroelectric thin film material dielectric performance multi-frequency automatic testing method and device |
| CN101726757A (en) * | 2009-12-16 | 2010-06-09 | 北京佳讯飞鸿电气股份有限公司 | Device for monitoring railway foreign body intrusion by using dynamic signal |
| CN102695959A (en) * | 2010-01-07 | 2012-09-26 | 3M创新有限公司 | Capacitance measurement circuit with dynamic feedback |
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| US7154470B2 (en) * | 2001-07-17 | 2006-12-26 | Immersion Corporation | Envelope modulator for haptic feedback devices |
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| CN1547036A (en) * | 2003-12-01 | 2004-11-17 | 中国科学技术大学 | Ferroelectric thin film material dielectric performance multi-frequency automatic testing method and device |
| CN101726757A (en) * | 2009-12-16 | 2010-06-09 | 北京佳讯飞鸿电气股份有限公司 | Device for monitoring railway foreign body intrusion by using dynamic signal |
| CN102695959A (en) * | 2010-01-07 | 2012-09-26 | 3M创新有限公司 | Capacitance measurement circuit with dynamic feedback |
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