CN113030687A - Performance test method - Google Patents
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- 238000003331 infrared imaging Methods 0.000 claims abstract description 38
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Abstract
The invention relates to the technical field of micro-nano device testing, and discloses a performance testing method which comprises the steps of testing a sample to be tested in different temperature environments to obtain a resonant frequency temperature coefficient of the sample to be tested; fixing a sample to be detected on infrared imaging equipment, and heating the infrared imaging equipment to a preset temperature; applying preset input power to a sample to be tested, and carrying out imaging test on the sample to be tested by using infrared imaging equipment to obtain surface temperature field information of the sample to be tested under the condition of the preset input power; under the condition of keeping the preset input power applied to the sample to be tested unchanged, testing to obtain the characteristic frequency of the sample to be tested; and calculating to obtain the equivalent temperature rise of the sample to be measured under the condition of the preset input power according to the resonant frequency temperature coefficient and the characteristic frequency. By acquiring the surface temperature field information and the equivalent temperature rise value of the sample to be tested under the preset power load, reliable support is provided for the design, reliability evaluation and analysis, failure mechanism modeling and other works of related products.
Description
Technical Field
The invention relates to the technical field of micro-nano device testing, in particular to a performance testing method.
Background
Micro-nano devices applied in the field of high-power loads, such as semiconductor power devices, BAW filters and the like, under the high-power load, the performance and reliability of the devices can be seriously influenced by the self-heating of the devices. Therefore, the self-heating effect of the micro-nano device under a high-power load, the generated temperature field (including key characteristic parameters such as the highest temperature and the average temperature) of the micro-nano device, the degradation characteristics of key performance parameters of the micro-nano device under the temperature field and the like are determined, and the method plays an important role in structural design of the micro-nano device, establishment of a heating model and reliability evaluation or failure mechanism analysis of the device.
Disclosure of Invention
Based on this, it is necessary to provide a performance testing method for determining the self-heating effect, the temperature field and the degradation characteristics of the key performance parameters generated by the micro-nano device under the high power load.
A performance test method comprises the steps of testing a sample to be tested in different temperature environments to obtain a resonant frequency temperature coefficient of the sample to be tested; fixing the sample to be detected on an infrared imaging device; applying preset input power to the sample to be tested, and carrying out imaging test on the sample to be tested by using the infrared imaging equipment to obtain surface temperature field information of the sample to be tested under the condition of the preset input power; under the condition that the preset input power applied to the sample to be tested is kept unchanged, testing to obtain the characteristic frequency of the sample to be tested; and calculating to obtain the equivalent temperature rise of the sample to be measured under the condition of preset input power according to the resonant frequency temperature coefficient and the characteristic frequency.
According to the performance testing method, the resonant frequency temperature coefficient of the sample to be tested is obtained by testing the sample to be tested in different temperature environments. Applying preset input power to the sample to be tested on the infrared imaging equipment heated to the preset temperature, and carrying out imaging test on the sample to be tested by using the infrared imaging equipment to obtain surface temperature field information of the sample to be tested under the condition of the preset input power. Meanwhile, under the condition that the input power is not changed, the characteristic frequency of the sample to be tested is obtained through testing. And obtaining the equivalent temperature rise of the sample to be measured under the condition of the preset input power according to the resonant frequency temperature coefficient and the characteristic frequency. The performance testing method provided by the invention not only can obtain the equivalent temperature rise value of the self-heating effect under the preset power load, but also can further obtain the temperature field information generated by the specific power load on the micro-nano device under the equivalent temperature rise value. The temperature distribution and the equivalent temperature rise value of different areas of the sample to be measured after the self-heating effect occurs under the preset power load are obtained, so that solid data support is provided for the design, reliability evaluation and analysis, failure mechanism modeling and other works of related products, and errors are reduced by utilizing data which are more in line with the actual heating condition of the sample to be measured.
In one embodiment, the testing a sample to be tested in different temperature environments to obtain a temperature coefficient of a resonant frequency of the sample to be tested includes testing to obtain a first characteristic frequency of the sample to be tested when an environmental temperature is a first temperature; under the condition that the environmental temperature is a second temperature, testing to obtain a second characteristic frequency of the sample to be tested; wherein the second temperature is greater than the first temperature; calculating the frequency drift of the environment temperature after the environment temperature is increased from the first temperature to the second temperature according to the first characteristic frequency and the second characteristic frequency; and calculating the temperature coefficient of the resonant frequency of the sample to be detected according to the frequency drift and the first characteristic frequency.
In one embodiment, the frequency drift is calculated by:
df(T)＝f(T)-f(T0)；
wherein, df (T) is frequency drift, f (T) is a second characteristic frequency, f (T)0) Is the first characteristic frequency.
In one embodiment, the resonant frequency temperature coefficient is calculated by:
wherein TCF is the temperature coefficient of resonance frequency, f (T)0) For the first characteristic frequency, df (T) is the frequency drift, and dT is the temperature difference between the second temperature and the first temperature.
In one embodiment, after calculating the temperature coefficient of the resonant frequency of the sample to be tested according to the frequency drift and the first characteristic frequency, the performance testing method further includes adjusting the ambient temperature to a plurality of different temperature values, and respectively testing and obtaining the characteristic frequencies of the sample to be tested at the different temperature values; respectively calculating the temperature coefficients of the resonant frequency of the sample to be measured at different temperatures according to the characteristic frequencies at different temperature values; and averaging all the obtained temperature coefficients of the resonance frequency.
In one embodiment, the first temperature is room temperature.
In one embodiment, when the sample to be detected is fixed on the infrared imaging device, the sample to be detected is fixed at a fixed position on a heating table of the infrared imaging device through a heat conducting glue.
In one embodiment, after the sample to be tested is fixed on the infrared imaging device, the performance testing method further includes heating the infrared imaging device to a preset temperature, and calibrating the thermal emissivity of the surface material of the sample to be tested.
In one embodiment, after a preset input power is applied to the sample to be tested, the infrared imaging device is used for performing imaging test on the sample to be tested, and surface temperature field information of the sample to be tested under a preset input power condition is obtained, the performance test method further includes obtaining key characteristic information of the sample to be tested under the preset input power condition according to the indicated temperature field information.
In one embodiment, the key feature information includes a temperature value of each point on the surface of the sample to be tested, a maximum temperature on the surface of the sample to be tested, an average temperature on the surface of the sample to be tested, and temperature gradient information on the surface of the sample to be tested.
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In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the specification, and other drawings can be obtained by those skilled in the art without inventive labor.
FIG. 1 is a flow chart of a method of performance testing according to one embodiment of the present invention;
FIG. 2 is a flowchart illustrating a method for obtaining a temperature coefficient of a resonant frequency according to an embodiment of the present invention;
FIG. 3 is a flowchart illustrating a method for reducing temperature coefficient error of a resonant frequency according to an embodiment of the present invention.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," "front," "rear," "circumferential," and the like are based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Micro-nano devices applied in the field of high-power loads, such as semiconductor power devices, BAW filters and the like, under the high-power load, the performance and reliability of the devices can be seriously influenced by the self-heating of the devices. The self-heating effect can cause the temperature rise of the device, and the properties (such as elastic coefficient, density, thickness and the like) of the laminated material in the micro-nano device have temperature dependence, wherein the elastic coefficient with negative temperature dependence is influenced most by the temperature rise. Therefore, when the temperature of the device obviously rises due to self-heating, the elastic coefficient is reduced, so that the longitudinal wave sound velocity is reduced, the resonant frequency of the micro-nano device is finally deviated downwards, and the situations of passband drift, in-band insertion loss increase and the like of the micro-nano device occur. Therefore, the self-heating effect is a main factor for limiting the power capacity of the micro-nano device.
At present, when the temperature rise of a micro-nano device caused by self-heating effect under different power loads is determined, the temperature rise is performed on the basis that the temperatures of heating areas of a sample to be detected are the same and the temperature distribution of different areas can be ignored. However, in practice, the temperature of the heating area of the device has a large temperature gradient, and when the conventional test method is adopted, that is, only one equivalent temperature value is used for representing the self-heating effect of the product under different power loads, large errors are brought to the design, reliability evaluation and analysis, failure mechanism modeling and other works of the product.
The invention provides a performance testing method based on TCF (transmission control function) and microscopic infrared imaging technologies and the like, which takes the characteristic frequency of a micro-nano device as a characterization parameter, obtains surface temperature field information of different parts in a micro-nano structure, and synchronously obtains an equivalent temperature value of characteristic frequency drift caused by key characteristic parameter combination.
Fig. 1 is a flowchart of a method of testing performance according to an embodiment of the present invention, in which the method of testing performance includes the following steps S100 to S500.
S100: and testing the sample to be tested in different temperature environments to obtain the resonant frequency temperature coefficient of the sample to be tested.
S200: and fixing the sample to be detected on the infrared imaging equipment.
S300: and applying preset input power to the sample to be tested, and carrying out imaging test on the sample to be tested by using infrared imaging equipment to obtain the surface temperature field information of the sample to be tested under the condition of the preset input power.
S400: and under the condition of keeping the preset input power applied to the sample to be tested unchanged, testing to obtain the characteristic frequency of the sample to be tested.
S500: and calculating to obtain the equivalent temperature rise of the sample to be measured under the condition of the preset input power according to the resonant frequency temperature coefficient and the characteristic frequency.
Firstly, a sample to be tested is placed in an environment with adjustable and controllable temperature. In this embodiment, the sample to be tested is a micro-nano device, and the micro-nano device is a BAW filter; the environment with adjustable and controllable temperature is a high-low temperature test chamber. And placing the sample to be tested in a high-low temperature test chamber. The environment temperature of the environment where the sample to be tested is located is adjusted by using the high-low temperature test chamber, the sample to be tested is tested at different environment temperatures, and the resonant frequency temperature coefficient of the sample to be tested is obtained according to the test.
And after the resonant frequency temperature coefficient of the sample to be detected is obtained, fixing the sample to be detected on the infrared imaging equipment. Applying a predetermined input power P to a sample to be testednAnd when the temperature distribution of the surface of the sample to be tested is stable, performing imaging test on the sample to be tested by using infrared imaging equipment to obtain the surface temperature field information of the sample to be tested under the condition of preset input power.
Then, the position of the sample to be measured is kept unchanged, and the input power P of the sample to be measured is keptnTesting the characteristic frequency f of the sample to be tested under the unchanged condition(Pn). According to the resonant frequency temperature coefficient and the characteristic frequency f of the sample to be measured(Pn)Calculating the input power P at the loadnEquivalent temperature rise (or device temperature) under conditions.
Based on the performance test method, the equivalent temperature rise value of the self-heating effect under the preset power load can be obtained, and the temperature field information generated by the specific power load on the micro-nano device under the equivalent temperature rise value can be further obtained. The temperature distribution and the equivalent temperature rise value of different areas of the sample to be measured after the self-heating effect occurs under the preset power load are obtained, so that solid data support is provided for the design, reliability evaluation and analysis, failure mechanism modeling and other works of related products, and errors are reduced by utilizing data which are more in line with the actual heating condition of the sample to be measured.
Fig. 2 is a flowchart illustrating a method for obtaining a temperature coefficient of a resonant frequency according to an embodiment of the present invention, in which a sample to be tested is tested under different temperature environments to obtain a temperature coefficient of a resonant frequency of the sample to be tested, including the following steps S110 to S140.
S110: and under the condition that the environmental temperature is the first temperature, testing to obtain the first characteristic frequency of the sample to be tested.
S120: under the condition that the environmental temperature is the second temperature, testing to obtain a second characteristic frequency of the sample to be tested; wherein the second temperature is greater than the first temperature.
S130: and calculating the frequency drift of the environment temperature after the environment temperature is increased from the first temperature to the second temperature according to the first characteristic frequency and the second characteristic frequency.
S140: and calculating the temperature coefficient of the resonant frequency of the sample to be measured according to the frequency drift and the first characteristic frequency.
After a sample to be tested is placed in a high-low temperature test chamber, the environmental temperature in the high-low temperature test chamber is set to be a first temperature T0. After the temperature in the high-low temperature test chamber is stabilized, the test is carried out at the first stageTemperature T0First characteristic frequency f (T) of lower sample to be measured0). Then, the ambient temperature in the high-low temperature test chamber is increased to a second temperature TnAnd T isn>T0. After the temperature in the high-low temperature test chamber is stabilized, testing at a second temperature TnSecond characteristic frequency f (T) of lower sample to be measuredn)。
According to a first characteristic frequency f (T)0) And a second characteristic frequency f (T)n) Calculating when the ambient temperature is from the first temperature T0Is raised to a second temperature TnThe frequency drift df (T) then occurring on the sample to be measuredn). According to frequency drift df (T)n) And a first characteristic frequency f (T)0) And calculating the temperature coefficient TCF of the resonant frequency of the sample to be measured. The temperature Coefficient of Resonance frequency tcf (temperature Coefficient of Resonance frequency) is a parameter used to describe the thermal stability of the resonator. The resonant frequency temperature coefficient can be used for representing the degree of resonant frequency shift of the microwave dielectric ceramic material when the temperature changes. Similarly, when the resonant frequency drifts during the period to be measured, the equivalent temperature rise on the sample to be measured can be calculated according to the frequency drift.
In one embodiment, the first temperature is room temperature. After a sample to be tested is placed in the high-low temperature test box, the environmental temperature in the high-low temperature test box is set to be room temperature, so that the environmental temperature of the sample to be tested in actual normal work is simulated. On the basis of room temperature, the environment temperature is increased to simulate the temperature rise of the sample to be measured during actual work.
In one embodiment, the frequency drift is calculated as:
df(Tn)＝f(Tn)-f(T0)；
wherein df (T)n) For frequency drift, f (T)n) Is the second characteristic frequency, f (T)0) Is the first characteristic frequency.
The first characteristic frequency f (T)0) And a second characteristic frequency f (T)n) Substituting the frequency drift calculation formula to calculate and obtain the temperature of the environment from the first temperature T0Is raised to a second temperature TnThen, the sample to be testedFrequency drift df (T) occurring on the articlen)。
In one embodiment, the resonant frequency temperature coefficient is calculated as:
wherein TCF is the temperature coefficient of resonance frequency, f (T)0) Is the first characteristic frequency, df (T)n) For frequency drift, dT is the temperature difference between the second temperature and the first temperature.
Calculating the acquired environment temperature from the first temperature T in the above embodiment0Is raised to a second temperature TnThe frequency drift df (T) then occurring on the sample to be measuredn) First characteristic frequency f (T)0) And substituting the temperature difference dT between the second temperature and the first temperature into the calculation formula of the resonant frequency temperature coefficient to calculate and obtain the resonant frequency temperature coefficient of the sample to be measured.
Fig. 3 is a flowchart illustrating a method for reducing a temperature coefficient error of a resonant frequency according to an embodiment of the present invention, in which after calculating a temperature coefficient of a resonant frequency of a sample to be tested according to a frequency drift and a first characteristic frequency, the performance testing method further includes steps S150 to S170.
S150: and adjusting the environmental temperature to a plurality of different temperature values, and respectively testing and obtaining the characteristic frequency of the sample to be tested at the different temperature values.
S160: and respectively calculating the temperature coefficients of the resonant frequency of the sample to be measured at different temperatures according to the characteristic frequencies at different temperature values.
S170: and averaging all the obtained temperature coefficients of the resonance frequency.
The environmental temperature in the high-low temperature test chamber is increased to a plurality of different temperature values, the plurality of different temperature values are all larger than the first temperature, and the characteristic frequency f (T) of the sample to be tested in different temperature environments is testedn). The characteristic frequency f (T) of the sample to be measured under different temperature environmentsn) Respectively substituting into frequency drift calculation formula to respectively calculate the temperature rise of the sample to be measured from room temperature to different temperaturesFrequency drift after a value of magnitude. And then, respectively substituting the frequency drift of the sample to be measured after the sample is heated to different temperature values from the room temperature into a calculation formula of the resonant frequency temperature coefficient TCF, and calculating to obtain a plurality of resonant frequency temperature coefficients TCF. Through carrying out the temperature rise test many times, every time carry out the temperature rise test and just ask for one to reduce resonant frequency temperature coefficient TCF, ask all resonant frequency temperature coefficients TCF that ask to get the mean value, can effectively reduce resonant frequency temperature coefficient TCF's experimental error.
It should be understood that although the various steps in the flowcharts of fig. 1-3 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 1-3 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed in turn or alternately with other steps or at least some of the other steps or stages.
In one embodiment, when the sample to be tested is fixed on the infrared imaging device, the sample to be tested is fixed at a fixed position on a heating table of the infrared imaging device through the heat conducting glue. In this embodiment, the infrared imaging device is a microscopic infrared imaging platform. Because the sample to be detected is a micro-nano device, a micro infrared imaging platform is required to be used for carrying out micro infrared imaging on the sample to be detected so as to obtain the surface temperature field information of the sample to be detected. The sample to be tested is connected with the heating table of the microscopic infrared imaging platform by using the heat-conducting glue, so that the sample to be tested and the heating table of the microscopic infrared imaging platform can form good thermal contact, and the position of the sample to be tested in the subsequent testing process can be kept unchanged.
In one embodiment, after a sample to be detected is fixed on a heating table of a microscopic infrared imaging platform, the sample to be detected is electrically connected, so that the real-time monitoring of the input power and the output signal of the sample to be detected is realized. And under the condition that input power is not applied to the sample to be measured, setting the temperature of the heating table board, and heating the heating table board to a preset temperature. In this example, the heating table was warmed to 70 ℃. After the heating table surface is heated to 70 ℃, the thermal emissivity of the surface material of the sample to be tested is calibrated, so that the accuracy of the acquired surface temperature field information is improved and the data error is reduced when the imaging test is carried out on the sample to be tested.
Keeping the position of the heating table of the microscopic infrared imaging platform of the sample to be measured still, and applying a preset input power P to the sample to be measurednAnd after the temperature distribution of the surface of the sample to be detected is stable, carrying out microscopic infrared imaging on the sample to be detected by using a microscopic infrared imaging platform, and extracting the surface temperature field information of the sample to be detected.
After the surface temperature field information of the sample to be measured is obtained, the preset input power P is keptnTesting the characteristic frequency f (P) of the sample to be tested under the unchanged conditionn). Measuring the characteristic frequency f (P)n) And substituting the temperature coefficient TCF of the resonant frequency obtained in the above embodiment into an equivalent temperature rise calculation formula to calculate and obtain the equivalent temperature rise (or device temperature) generated due to the self-heating effect under the preset input power condition. The equivalent temperature rise calculation formula is as follows:
wherein dT (P) is the equivalent temperature rise, f (T)0) Is the first characteristic frequency, df (P)n) For a predetermined frequency shift of the input power relative to no input power, TCF is the resonant frequency temperature coefficient.
In one embodiment, after the preset input power is applied to the sample to be tested, the infrared imaging device is used for performing imaging test on the sample to be tested, and the surface temperature field information of the sample to be tested under the condition of the preset input power is obtained, the performance testing method further comprises the step of obtaining key characteristic information of the sample to be tested under the condition of the preset input power according to the temperature field information.
The self-heating effect can cause the failure of the micro-nano device, and the failure mainly comes from 2 modes, namely performance degradation and structural damage. The intrinsic physical mechanisms of performance degradation are: some related materials in the micro-nano device, such as elastic coefficient, density, thickness and the like, have temperature dependency, so when the temperature of the device is obviously increased due to self-heating, the resonance frequency of the micro-nano device is likely to be deviated downwards, and the pass band of the micro-nano device is likely to drift and the in-band insertion loss is increased. The physical mechanism of failure of the structure damage is as follows: the concentrated self-heating heat causes film warpage in the form of thermal stress, which in turn causes a sharp increase in local current density and further exacerbates the self-heating effect.
Therefore, when the overall average temperature is not high, but the local temperature point is too high, the damage and the failure of the filter are likely to be caused. Therefore, the key characteristic information of the micro-nano device comprises information such as the highest temperature, the average temperature, the temperature gradient and the like. The key characteristic information has important influence on the performance stability and reliability of the micro-nano device.
In one embodiment, the key characteristic information includes a temperature value of each point on the surface of the sample to be measured, a maximum temperature on the surface of the sample to be measured, an average temperature on the surface of the sample to be measured, and temperature gradient information on the surface of the sample to be measured.
According to the surface temperature field information of the sample to be detected under the condition of preset input power, the temperature value of each point on the surface of the sample to be detected can be visually obtained, and meanwhile, the highest temperature information on the surface of the sample to be detected can be obtained by comparing the temperature values of each point. And calculating the average value of the temperature values of all points on the surface of the sample to be measured, so as to obtain the average temperature on the surface of the sample to be measured. Meanwhile, based on the temperature values of all points, the temperature gradient information of the whole surface of the sample to be measured can be calculated and obtained. Therefore, the technology of the invention is based on TCF, microscopic infrared imaging and other technologies, and obtains the equivalent temperature rise value of the micro-nano device under specific power load and the temperature distribution information of different parts in the structure, including key characteristic information such as the highest temperature, the average temperature, the temperature gradient and the like, on the basis of obtaining the temperature rise of the micro-nano device under different power loads and the frequency drift caused by the temperature rise.
The performance testing method provided by the invention not only can obtain the equivalent temperature rise value of the sample to be tested under the self-heating effect caused by the specific power load, but also can further obtain richer information such as the temperature field generated by the specific power load on the sample to be tested under the equivalent temperature rise value, including the key characteristic information such as the maximum temperature, the average temperature, the temperature gradient and the like, and can provide solid support for the design, reliability evaluation and analysis, failure mechanism modeling and other works of related products.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of performance testing, comprising:
testing a sample to be tested in different temperature environments to obtain a resonant frequency temperature coefficient of the sample to be tested;
fixing the sample to be detected on an infrared imaging device;
applying preset input power to the sample to be tested, and carrying out imaging test on the sample to be tested by using the infrared imaging equipment to obtain surface temperature field information of the sample to be tested under the condition of the preset input power;
under the condition that the preset input power applied to the sample to be tested is kept unchanged, testing to obtain the characteristic frequency of the sample to be tested;
and calculating to obtain the equivalent temperature rise of the sample to be measured under the condition of preset input power according to the resonant frequency temperature coefficient and the characteristic frequency.
2. The performance testing method of claim 1, wherein the testing the sample to be tested in different temperature environments to obtain the temperature coefficient of the resonant frequency of the sample to be tested comprises:
under the condition that the environmental temperature is a first temperature, testing to obtain a first characteristic frequency of the sample to be tested;
under the condition that the environmental temperature is a second temperature, testing to obtain a second characteristic frequency of the sample to be tested; wherein the second temperature is greater than the first temperature;
calculating the frequency drift of the environment temperature after the environment temperature is increased from the first temperature to the second temperature according to the first characteristic frequency and the second characteristic frequency;
and calculating the temperature coefficient of the resonant frequency of the sample to be detected according to the frequency drift and the first characteristic frequency.
3. The performance testing method of claim 2, wherein the frequency drift is calculated by:
df(Tn)＝f(Tn)-f(T0)；
wherein df (T)n) For frequency drift, f (T)n) Is the second characteristic frequency, f (T)0) Is the first characteristic frequency.
4. The performance testing method of claim 2, wherein the resonant frequency temperature coefficient is calculated by:
wherein TCF is the temperature coefficient of resonance frequency, f (T)0) For the first characteristic frequency, df (T) is the frequency drift, and dT is the temperature difference between the second temperature and the first temperature.
5. The performance testing method of claim 2, wherein after calculating the temperature coefficient of the resonant frequency of the sample to be tested according to the frequency drift and the first characteristic frequency, the performance testing method further comprises:
adjusting the environmental temperature to a plurality of different temperature values, and respectively testing and obtaining the characteristic frequency of the sample to be tested at the different temperature values;
respectively calculating the temperature coefficients of the resonant frequency of the sample to be measured at different temperatures according to the characteristic frequencies at different temperature values;
and averaging all the obtained temperature coefficients of the resonance frequency.
6. The performance testing method of claim 2, wherein the first temperature is room temperature.
7. The performance testing method according to claim 1, wherein the sample to be tested is fixed at a fixed position on a heating table of an infrared imaging device by a thermally conductive adhesive when the sample to be tested is fixed on the infrared imaging device.
8. The performance testing method according to claim 1 or 2, wherein after the sample to be tested is fixed on an infrared imaging device, the performance testing method further comprises:
and heating the infrared imaging equipment to a preset temperature, and calibrating the thermal emissivity of the surface material of the sample to be tested.
9. The performance testing method according to claim 1, wherein after applying a preset input power to the sample to be tested, performing an imaging test on the sample to be tested by using the infrared imaging device, and acquiring surface temperature field information of the sample to be tested under a preset input power condition, the performance testing method further comprises:
and acquiring key characteristic information of the sample to be detected under a preset input power condition according to the indicating temperature field information.
10. The performance testing method according to claim 9, wherein the key characteristic information includes a temperature value of each point on the surface of the sample to be tested, a maximum temperature on the surface of the sample to be tested, an average temperature on the surface of the sample to be tested, and temperature gradient information on the surface of the sample to be tested.
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