CN113725308A - 一种可靠度高的光伏电池 - Google Patents

一种可靠度高的光伏电池 Download PDF

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CN113725308A
CN113725308A CN202111026852.4A CN202111026852A CN113725308A CN 113725308 A CN113725308 A CN 113725308A CN 202111026852 A CN202111026852 A CN 202111026852A CN 113725308 A CN113725308 A CN 113725308A
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monocrystalline silicon
photovoltaic cell
layer
metal electrode
highly reliable
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单伶宝
单崇瑄
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Suzhou Jiedebao Electromechanical Equipment Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Abstract

本发明公开了一种可靠度高的光伏电池,包括衬底,所述衬底采用单晶硅片,且在所述单晶硅片的两侧均有切割痕,两侧的切割痕方向相同,在所述单晶硅片的一侧包含发射极,所述发射级包含钝化区,在所述钝化区上设置金属电极,且所述金属电极与切割痕交叉设置,所述单晶硅片的另一侧设置接触钝化层,且所述接触钝化层为复合叠层。通过在单晶硅片的发射极的一侧设置金属电极,而且金属电极与切割痕交叉设置,可以增强光伏电池的机械强度,继而提高电池的可靠度,从而极大的提高电池的使用寿命,最终降低光伏电池的发电成本。

Description

一种可靠度高的光伏电池
技术领域
本发明涉及太阳能电池制备领域,尤其涉及一种可靠度高的光伏电池。
背景技术
随着太阳能电池行业的不断发展,内业竞争也在不断加剧,大型太阳能电 池企业间并购整合与资本运作日趋频繁,优秀的太阳能电池生产企业愈来愈重 视对行业市场的研究,特别是对产业发展环境和产品购买者的深入研究。太阳 光照在半导体p-n结上,形成新的空穴-电子对,在p-n结内建电场的作用下, 光生空穴流向p区,光生电子流向n区,接通电路后就产生电流。这就是光电 效应太阳能电池的工作原理。
但是,现有的光伏电池的表面会存在切割痕,这些切割痕会对光伏电池的 强度造成影响,如果不进行处理,则影响光伏电池的使用寿命和增加光伏电池 的发电成本。
因此本发明的发明人,针对上述技术问题,旨在发明一种可靠度高的光伏 电池。
发明内容
为克服上述缺点,本发明的目的在于提供一种可靠度高的光伏电池。
为了达到以上目的,本发明采用的技术方案是:一种可靠度高的光伏电池, 包括衬底,所述衬底采用单晶硅片,且在所述单晶硅片的两侧均有切割痕,两 侧的切割痕方向相同,在所述单晶硅片的一侧包含发射极,所述发射级包含钝 化区,在所述钝化区上设置金属电极,且所述金属电极与切割痕交叉设置,所 述单晶硅片的另一侧设置接触钝化层,且所述接触钝化层为复合叠层。
优选地,所述金属电极与切割痕垂直设置。
优选地,所述切割痕平行设置多个,同时所述金属电极也平行设置多个。 即切割痕和金属电极均设置多个,其中,切割痕是由于单晶硅片切割时造成的, 而金属电极的设置,才是主动设置的,为了提高光伏电池的可靠性。
优选地,所述金属电极的宽度介于5-30微米,其高度介于5-20微米,且 金属电极的数量n满足以下公式:
Figure BDA0003243610350000021
其中,x为单晶硅片的边长且此边与切割痕方向平行,且其长度单位为mm。
优选地,所述单晶硅片为矩形或具有倒角的准矩形,其相邻的两边的边长 分别为x和y,且二者长度不相同。
优选地,所述金属电极的材质为金、银、铜、铝、镍、锡及其化合物中的 至少一种。即金属电极可以为单金属电极或其化合物电极,也可以为多个叠层 复合的电极。
优选地,所述接触钝化层为氧化硅层、掺杂多晶硅层、氮化硅层的叠层, 且所述氧化硅层与单晶硅片的另一侧接触。
优选地,所述接触钝化层为本征非晶硅层、掺杂非晶硅层和透明导电膜层 的叠层,且所述本征非晶硅层与单晶硅片的另一侧接触。
本发明一种可靠度高的光伏电池的有益效果是,通过在单晶硅片的发射极 的一侧设置金属电极,而且金属电极与切割痕交叉设置,可以增强光伏电池的 机械强度,继而提高电池的可靠度,从而极大的提高电池的使用寿命,最终降 低光伏电池的发电成本。
附图说明
图1为光伏电池的表面示意图。
图2为光伏电池的纵剖面示意图。
图中:
1、衬底,2、切割痕,3、钝化区,4、金属电极,5、接触钝化层。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述,以使本发明的优点和 特征能更易于被本领域技术人员理解,从而对本发明的保护范围做出更为清楚 明确的界定。
参见附图1-2所示,本实施例中的一种可靠度高的光伏电池,包括衬底1, 衬底1采用单晶硅片,且在单晶硅片的两侧均有切割痕2,两侧的切割痕2方向 相同,在单晶硅片的一侧包含发射极,发射级包含钝化区3,在钝化区3上设置 金属电极4,且金属电极4与切割痕2交叉设置,单晶硅片的另一侧设置接触钝 化层5,且接触钝化层5为复合叠层。
金属电极4与切割痕2垂直设置。
切割痕2平行设置多个,同时金属电极4也平行设置多个。即切割痕2和 金属电极4均设置多个,其中,切割痕2是由于单晶硅片切割时造成的,而金 属电极4的设置,才是主动设置的,为了提高光伏电池的可靠性。
金属电极4的宽度介于5-30微米,其高度介于5-20微米,且金属电极4 的数量n满足以下公式:
x/2.5≤n≤x/0.5
其中,x为单晶硅片的边长且此边与切割痕2方向平行,且其长度单位为 mm。
单晶硅片为矩形或具有倒角的准矩形,其相邻的两边的边长分别为x和y, 且二者长度不相同。
金属电极4的材质为金、银、铜、铝、镍、锡及其化合物中的至少一种。 即金属电极4可以为单金属电极4或其化合物电极,也可以为多个叠层复合的 电极。
接触钝化层5为氧化硅层、掺杂多晶硅层、氮化硅层的叠层,且氧化硅层 与单晶硅片的另一侧接触。
接触钝化层5为本征非晶硅层、掺杂非晶硅层和透明导电膜层的叠层,且 本征非晶硅层与单晶硅片的另一侧接触。
单晶硅片的表面为金字塔状,可以减少光的反射,增加对光的吸收,但是 这种厚度不匀的设置,会降低光伏电池的可靠度,因此增加金属电极,且金属 电极与切割痕垂直设置,增加其机械强度。
一种可靠度高的光伏电池的有益效果是,通过在单晶硅片的发射极的一侧 设置金属电极4,而且金属电极4与切割痕2交叉设置,可以增强光伏电池的机 械强度,继而提高电池的可靠度,从而极大的提高电池的使用寿命,最终降低 光伏电池的发电成本。
以上实施方式只为说明本发明的技术构思及特点,其目的在于让熟悉此项 技术的人了解本发明的内容并加以实施,并不能以此限制本发明的保护范围, 凡根据本发明精神实质所做的等效变化或修饰,都应涵盖在本发明的保护范围 内。

Claims (8)

1.一种可靠度高的光伏电池,其特征在于:包括衬底,所述衬底采用单晶硅片,且在所述单晶硅片的两侧均有切割痕,两侧的切割痕方向相同,在所述单晶硅片的一侧包含发射极,所述发射级包含钝化区,在所述钝化区上设置金属电极,且所述金属电极与切割痕交叉设置,所述单晶硅片的另一侧设置接触钝化层,且所述接触钝化层为复合叠层。
2.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述金属电极与切割痕垂直设置。
3.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述切割痕平行设置多个,同时所述金属电极也平行设置多个。
4.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述金属电极的宽度介于5-30微米,其高度介于5-20微米,且金属电极的数量n满足以下公式:
Figure FDA0003243610340000011
其中,x为单晶硅片的边长且此边与切割痕方向平行,且其长度单位为mm。
5.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述单晶硅片为矩形或具有倒角的准矩形,其相邻的两边的边长分别为x和y,且二者长度不相同。
6.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述金属电极的材质为金、银、铜、铝、镍、锡及其化合物中的至少一种。
7.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述接触钝化层为氧化硅层、掺杂多晶硅层、氮化硅层的叠层,且所述氧化硅层与单晶硅片的另一侧接触。
8.根据权利要求1所述的一种可靠度高的光伏电池,其特征在于:所述接触钝化层为本征非晶硅层、掺杂非晶硅层和透明导电膜层的叠层,且所述本征非晶硅层与单晶硅片的另一侧接触。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159676A (ja) * 2010-01-29 2011-08-18 Sanyo Electric Co Ltd 太陽電池及びその太陽電池を用いた太陽電池モジュール
JP2013089624A (ja) * 2011-10-13 2013-05-13 Sharp Corp 結晶シリコン太陽電池モジュールおよび結晶シリコン太陽電池モジュールの製造方法
WO2018003243A1 (ja) * 2016-06-29 2018-01-04 パナソニックIpマネジメント株式会社 太陽電池モジュール
CN107644917A (zh) * 2016-07-22 2018-01-30 茂迪股份有限公司 太阳能电池及其模组
CN110277458A (zh) * 2017-03-09 2019-09-24 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159676A (ja) * 2010-01-29 2011-08-18 Sanyo Electric Co Ltd 太陽電池及びその太陽電池を用いた太陽電池モジュール
JP2013089624A (ja) * 2011-10-13 2013-05-13 Sharp Corp 結晶シリコン太陽電池モジュールおよび結晶シリコン太陽電池モジュールの製造方法
WO2018003243A1 (ja) * 2016-06-29 2018-01-04 パナソニックIpマネジメント株式会社 太陽電池モジュール
CN107644917A (zh) * 2016-07-22 2018-01-30 茂迪股份有限公司 太阳能电池及其模组
CN110277458A (zh) * 2017-03-09 2019-09-24 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法

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