CN113725125A - Single-chip radio frequency plasma glue sweeping equipment - Google Patents

Abstract

The invention relates to the technical field of wafer processing equipment, in particular to single-chip radio frequency plasma glue sweeping equipment which comprises an equipment main body, wherein the equipment main body mainly comprises a wafer box placing mechanism, a wafer carrying robot, a wafer correcting mechanism and a vacuum reaction cavity system; sweep gluey equipment during operation, at first place the spool box that is equipped with the disk on spool box placement mechanism, take out disk vacuum adsorption by wafer transfer robot, carry and release the vacuum on the disk aligning gear and rectify, the action of opening the door of automatic switch door mechanism of simultaneous control, the disk after the correction is taken out disk vacuum adsorption by wafer transfer robot again, put into the reaction chamber of vacuum reaction cavity system inside, the action of closing the door of control automatic switch door mechanism, it is when using to have solved current plasma and swept gluey equipment, it has simple structure mostly, the problem that the function is single and the effect of removing glue is poor, a monolithic formula for 2 to 6 inches semiconductor disk is beaten and is glued.

Description

Single-chip radio frequency plasma glue sweeping equipment

Technical Field

The invention relates to the technical field of wafer processing equipment, in particular to single-chip radio frequency plasma glue sweeping equipment.

Background

With the rapid development of science and technology, high-tech electronic products, such as mobile phones, tablet computers, digital cameras, etc., have been widely used in daily life. These electronic products include a plurality of semiconductor chips, and the material source of the semiconductor chips is a wafer. In order to meet the large demand of high-tech electronic products, the wafer manufacturing industry is continuously developing and improving how to make the manufacturing process of the wafer faster and more efficient.

When plasma glue-sweeping equipment in the existing market is used, most of the plasma glue-sweeping equipment has the defects of simple structure, single function and poor glue-removing effect, so that the research and development of single-chip radio-frequency plasma glue-sweeping equipment are urgently needed to solve the problems.

Disclosure of Invention

Aiming at the defects of the prior art, the invention provides single-chip radio frequency plasma glue sweeping equipment, which solves the problems of simple structure, single function and poor glue removing effect of the existing plasma glue sweeping equipment in use, is used for single-chip glue removing of a 2-to 6-inch semiconductor wafer, and completes the glue removing by generating low-pressure and low-temperature plasma glow discharge to perform rapid chemical reaction and physical impact with the surface of the wafer. And the wafer is prevented from being damaged by high-energy ions in an up-down plasma photoresist removing mode.

The invention is realized by the following technical scheme:

the single-chip radio frequency plasma glue sweeping equipment comprises an equipment main body, wherein the equipment main body mainly comprises a chip box placing mechanism, a wafer carrying robot, a wafer correcting mechanism and a vacuum reaction cavity system;

sweep the gluey equipment during operation, at first place the spool box that is equipped with the disk on spool box placement mechanism, take out disk vacuum adsorption by wafer handling robot, carry and release the vacuum on the disk aligning gear and rectify, the action of opening the door of automatic switch door mechanism is controlled simultaneously, the disk after the correction is taken out disk vacuum adsorption by wafer handling robot again, put into the reaction chamber inside of vacuum reaction cavity system, the action of closing the door of control automatic switch door mechanism, carry out radio frequency plasma through the radio frequency ionization chamber and sweep the glue, sweep gluey back, control automatic switch door mechanism and open the door the action, wafer handling robot takes out disk vacuum adsorption and from the reaction intracavity of vacuum reaction cavity system, and place spool piece aligning gear and rectify, take out after the correction and put into the spool box.

Preferably, the wafer box placing mechanism comprises a mounting frame, a fixed clamping plate, a movable clamping plate and a wafer box; the fixed clamping plate is detachably mounted at one end of the top of the mounting frame, the movable clamping plate is detachably locked at the other end of the top of the mounting frame, and the wafer box is clamped between the fixed clamping plate and the movable clamping plate; the top of the mounting frame further comprises a microswitch, and the microswitch below the movable clamping plate of the manual adjusting sheet box can be used for detecting whether a wafer placed in the sheet box exists or not.

And a plurality of ladder draw-in grooves are all symmetrically seted up at the both ends of fixed cardboard, two parallel waist type grooves are seted up on the removal cardboard, set up on the top of mounting bracket with waist type groove matched with a word type groove of locking, two a word type groove is eight style of calligraphy symmetric distribution and sets up.

Preferably, the mechanical arm of the wafer carrying robot is made of a ceramic arm material, the top of the outermost end of the mechanical arm is provided with at least two vacuum adsorption grooves, and the at least two vacuum adsorption grooves are sequentially arranged in an annular groove structure from inside to outside.

Preferably, the wafer correcting mechanism comprises a correcting frame and a correcting plate; the top circumference of correction frame is equipped with a plurality of correction board, every a plurality of ladder standing grooves have been seted up from top to bottom in proper order to the top of correction board.

Preferably, the vacuum reaction cavity system comprises a radio frequency ionization chamber, a vacuum reaction cavity and an automatic door opening and closing mechanism; the top of the vacuum reaction cavity is provided with the radio frequency ionization chamber, and the interior of the radio frequency ionization chamber comprises a quartz cavity, a radio frequency anode, a radio frequency cathode and an insulating sheet;

an insulating sheet is circumferentially arranged on the outer wall of the quartz cavity, the radio-frequency anode is connected onto the insulating sheet and comprises an annular anode ring and an anode plate, and the anode plate is circumferentially arranged on the inner wall of the annular anode ring; the radio frequency negative pole includes annular negative pole circle and negative pole piece, annular negative pole circle inlays to be located on the outer wall in quartz chamber, the top circumference of annular negative pole circle is equipped with the negative pole piece, positive plate with evenly crisscross the setting between the negative pole piece.

Preferably, the vacuum reaction chamber is communicated with the quartz chamber, the top of the quartz chamber is communicated with an air inlet pipe, and the vacuum reaction chamber comprises an aluminum cavity, a layered quartz disc, a heating table, a wafer supporting mechanism and a vacuum gauge; the layered quartz plate is embedded in the upper portion of the inner cavity of the aluminum cavity, the heating table is arranged on the lower portion of the inner cavity of the aluminum cavity, the vacuum gauge is further arranged on the aluminum cavity, and the detection end of the vacuum gauge is located inside the aluminum cavity.

Preferably, the top of the inner cavity of the quartz cavity further comprises an air distribution disc communicated with the air inlet pipe, the bottom of the air distribution disc is arranged in an arc spherical structure, and a plurality of first air distribution holes are uniformly formed in the arc spherical surface of the air distribution disc;

the layered quartz plate comprises at least two layers of quartz plate structures, and a plurality of second air distribution holes are uniformly formed in the layered quartz plate;

the vacuum reaction cavity further comprises a vacuum pumping pipeline and a vacuum butterfly valve arranged on the vacuum pumping pipeline.

Preferably, the wafer supporting mechanism comprises a supporting plate, a lifting cylinder and a lifting rod; an inserting groove is formed in the circumferential direction of the heating table, a supporting plate is inserted in the inserting groove in a sliding mode, the bottom of the supporting plate is connected with a lifting plate, the bottom of the aluminum cavity further comprises an installed lifting cylinder, the end of a piston rod of the lifting cylinder is provided with the lifting rod, and the lifting rod penetrates through the bottom wall of the aluminum cavity and is connected with the lifting plate;

the aluminum cavity further comprises a cavity opening, and the cavity opening is automatically opened and closed by controlling the automatic door opening and closing mechanism.

Preferably, the automatic door opening and closing mechanism comprises a fixed plate, a lifting cylinder, a vertical guide rod, a guide seat, a lifting plate, a propelling cylinder, a transverse guide rod, a guide sleeve, an insertion rod, a spring and a door plate; the lifting cylinder is mounted on the fixed plate, the lifting plate is arranged at the end of a piston rod of the lifting cylinder, two guide seats are symmetrically arranged on one side of the lifting plate, the vertical guide rods are inserted in the guide seats in a sliding mode, and the vertical guide rods are symmetrically arranged on the fixed plate;

the pushing cylinder is mounted on the lifting plate, the door plate is arranged at the end of a piston rod of the pushing cylinder, the insertion rods are symmetrically arranged at four corners of one side of the door plate, the springs are sleeved on the insertion rods, one ends of the springs are abutted with the lifting plate, and the other ends of the springs are abutted with the limiting parts of the insertion rods;

the two transverse guide rods are arranged between the upper and lower insertion rods, the transverse guide rods are symmetrically arranged on one side of the door plate, the transverse guide rods are in sliding insertion with the guide sleeves, and the guide sleeves are symmetrically and fixedly inserted on the lifting plate.

The invention has the beneficial effects that:

by adopting the design and the use of the structure, the invention solves the problems of simple structure, single function and poor photoresist removing effect of most of the existing plasma photoresist removing equipment when in use, is used for single-chip photoresist removing of a 2-6 inch semiconductor wafer, and performs rapid chemical reaction and physical impact with the surface of the wafer by generating low-pressure and low-temperature plasma glow discharge to complete photoresist removing. The wafer is prevented from being damaged by high-energy ions in an up-down plasma photoresist removing mode;

the invention has novel structure, reasonable design, simple and flexible operation and stronger practicability.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a block diagram of the present invention;

FIG. 2 is a top view of the internal structure of the present invention;

FIG. 3 is a first view showing the configuration of a sheet cassette placing mechanism according to the present invention;

FIG. 4 is a second view showing the structure of the sheet cassette placing mechanism according to the present invention;

FIG. 5 is a structural view of a straight-shaped groove of the present invention;

FIG. 6 is a structural view of a wafer correcting mechanism in the present invention;

FIG. 7 is a block diagram of a wafer handling robot according to the present invention;

FIG. 8 is a schematic diagram of the automatic door opening and closing mechanism and vacuum reaction chamber system of the present invention;

FIG. 9 is a first block diagram of the automatic door opening and closing mechanism according to the present invention;

FIG. 10 is a second structural view of an automatic door opening and closing mechanism according to the present invention;

FIG. 11 is a bottom view of the disk lift mechanism of the present invention;

FIG. 12 is a sectional view showing the structure of a vacuum reaction chamber system according to the present invention;

FIG. 13 is a block diagram of the radio frequency ionization chamber of the present invention;

FIG. 14 is a sectional view showing the structure of a quartz chamber and a vacuum reaction chamber in the present invention.

In the figure: 1-equipment main body, 2-cassette placing mechanism, 21-mounting rack, 22-fixed clamping board, 23-movable clamping board, 24-cassette, 25-step clamping groove, 26-waist-shaped groove, 27-straight-line-shaped groove, 3-wafer carrying robot, 31-mechanical arm, 32-vacuum adsorption groove, 4-wafer correcting mechanism, 41-correcting rack, 42-correcting board, 43-step placing groove, 5-vacuum reaction cavity system, 51-radio frequency ionization chamber, 511-quartz cavity, 512-radio frequency anode, 513-radio frequency cathode, 514-insulating sheet, 515-air inlet pipe, 516-air distribution disk, 52-vacuum reaction cavity, 521-aluminum cavity, 522-layered quartz disk, 523-heating table, 5231-thermocouple thermometer, 524-wafer supporting mechanism, 5241-supporting plate, 5242-lifting plate, 5243-lifting cylinder, 5244-lifting rod, 5245-spring sealing hose, 525-vacuum gauge, 526-vacuum pumping pipeline, 527-vacuum butterfly valve, 528-chamber port, 53-automatic door opening and closing mechanism, 531-fixing plate, 532-lifting cylinder, 533-vertical guide rod, 534-guide seat, 535-lifting plate, 536-pushing cylinder, 537-transverse guide rod, 538-guide sleeve, 539-connecting rod, 540-spring and 541-door plate.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example 1:

referring to fig. 1 to 14, the embodiment specifically discloses a technical solution for providing a single-chip rf plasma glue-sweeping apparatus, which includes an apparatus main body 1, wherein the apparatus main body 1 mainly includes a wafer box placing mechanism 2, a wafer carrying robot 3, a wafer correcting mechanism 4 and a vacuum reaction chamber system 5;

the working process of the glue sweeping equipment during working is as follows:

firstly, a wafer box 24 with wafers is placed on a wafer box placing mechanism 2, the wafers are taken out in a vacuum adsorption mode through a wafer carrying robot 3, the wafers are carried to a wafer correcting mechanism 4 to release vacuum for correction, meanwhile, a door opening action of an automatic door opening and closing mechanism 53 is controlled, the wafers after correction are taken out in a vacuum adsorption mode through the wafer carrying robot 3 and are placed in a reaction cavity of a vacuum reaction cavity system 5, the door closing action of the automatic door opening and closing mechanism 53 is controlled, radio frequency plasma glue sweeping is carried out through a radio frequency ionization chamber 51, after the glue sweeping action, the door opening action of the automatic door opening and closing mechanism 53 is controlled, the wafers are taken out in a vacuum adsorption mode through the wafer carrying robot 3 and are taken out of the reaction cavity of the vacuum reaction cavity system 5, the wafers are placed to the wafer correcting mechanism 4 to be corrected, and are taken out and are placed into the wafer box 24.

Specifically, the cassette placing mechanism 2 comprises a mounting frame 21, a fixed clamping plate 22, a movable clamping plate 23 and a cassette 24; a fixed clamping plate 22 is detachably mounted at one end of the top of the mounting frame 21, a movable clamping plate 23 is detachably locked at the other end of the top of the mounting frame, and a sheet box 24 is clamped between the fixed clamping plate 22 and the movable clamping plate 23; when the wafer box 24 is locked and fastened, the position of the movable clamping plate 23 on the top of the mounting frame 21 can be adjusted, so that the wafer box 24 filled with wafers of different calibers and sizes can be locked and fixed;

a plurality of stepped clamping grooves 25 are symmetrically formed in both ends of the fixed clamping plate 22, two parallel waist-shaped grooves 26 are formed in the movable clamping plate 23, a straight-line-shaped groove 27 matched and locked with the waist-shaped grooves 26 is formed in the top of the mounting frame 21, and the two straight-line-shaped grooves 27 are symmetrically distributed in a splayed shape; the position of the movable clamping plate 23 at the top of the mounting frame 21 can be adjusted by locking the locking bolt and the locking nut with the waist-shaped groove 26 and the straight-shaped groove 27, and the movable clamping plate is conveniently matched, clamped, locked and fixed with the sheet box 24 through the arrangement of the plurality of stepped clamping grooves 25; through the splayed symmetrical arrangement of the linear grooves 27, the movable clamping plate 23 can be conveniently locked and fixed after being adapted to the positions of the wafer containing boxes 24 with different sizes.

Specifically, the mechanical arm 31 of the wafer carrying robot 3 is made of a ceramic arm material, the vacuum adsorption grooves 32 are formed in the top of the outermost end of the mechanical arm 31, the number of the vacuum adsorption grooves 32 is at least two, the annular groove structures are sequentially arranged from inside to outside, the vacuum adsorption grooves 32 are communicated with an attached vacuum air extractor on the mechanical arm 31, the vacuum adsorption grooves 32 are vacuumized, and the purpose of adsorbing, fixing and picking up the wafer is achieved through vacuum adsorption force.

Specifically, the wafer correcting mechanism 4 includes a correcting frame 41 and a correcting plate 42; a plurality of correction plates 42 are circumferentially arranged at the top of the correction frame 41, and a plurality of step placement grooves 43 are sequentially formed in the top of each correction plate 42 from top to bottom; through the arrangement of the plurality of stepped placing grooves 43, the wafer wafers with different calibers and sizes can be conveniently corrected and placed.

Specifically, the vacuum reaction cavity system 5 comprises a radio frequency ionization chamber 51, a vacuum reaction cavity 52 and an automatic door opening and closing mechanism 53; the top of the vacuum reaction chamber 52 is provided with a radio frequency ionization chamber 51, and the interior of the radio frequency ionization chamber 51 comprises a quartz cavity 511, a radio frequency anode 512, a radio frequency cathode 513 and an insulating sheet 514; the radio frequency anode 512 and the radio frequency cathode 513 are electrically connected with a radio frequency power supply which can be adjusted at 13.56MHz and 100-. And the wafer is prevented from being damaged by high-energy ions in an up-down plasma photoresist removing mode.

An insulating sheet 514 is circumferentially arranged on the outer wall of the quartz cavity 511, a radio frequency anode 512 is connected to the insulating sheet 514, the radio frequency anode 512 comprises an annular anode ring and an anode plate, and the anode plate is circumferentially arranged on the inner wall of the annular anode ring; the radio-frequency negative electrode 513 comprises an annular negative electrode ring and negative electrode pieces, the annular negative electrode ring is embedded on the outer wall of the quartz cavity 511, the negative electrode pieces are circumferentially arranged at the top of the annular negative electrode ring, and the positive electrode pieces and the negative electrode pieces are uniformly arranged in a staggered manner; through the positive plate and the negative plate which are uniformly and alternately arranged, the uniform ionization effect of the process gas can be improved.

Specifically, the vacuum reaction chamber 52 is communicated with the quartz chamber 511, the top of the quartz chamber 511 is provided with a gas inlet pipe 515, and the vacuum reaction chamber 52 comprises an aluminum chamber 521, a layered quartz disc 522, a heating table 523, a wafer lifting mechanism 524 and a vacuum gauge 525; the upper part of the inner cavity of the aluminum cavity 521 is embedded with a layered quartz disk 522, the lower part of the inner cavity of the aluminum cavity 521 is provided with a heating table 523, the heating table 523 further comprises a thermocouple thermometer 5231, a detection probe of the thermocouple thermometer is positioned in a detection cavity formed in the circumferential direction of the heating table 523 and used for detecting the heating temperature on the heating table 523, the heating temperature is controlled within 70-250 ℃, the aluminum cavity 521 is further provided with a vacuum gauge 525, and the detection end of the vacuum gauge 525 is positioned inside the aluminum cavity 521. The process gas ionized by the radio frequency ionization chamber 51 enters the quartz cavity 511 through the gas inlet pipe 515, is uniformly distributed through the layered quartz disk 522, and is sprayed onto the wafer on the heating table 523 to perform bombardment photoresist removal action on the wafer; and the ionized high-energy active particles are eliminated by gas phase recombination in the process of passing through the layered quartz disk 522; the low-energy free radicals and neutral particles capable of oxidizing the photoresist are sent to the surface of the wafer to complete photoresist removal, and the photoresist removal rate is 0.5-1.5 um/min.

Specifically, the top of the inner cavity of the quartz cavity 511 further comprises an air distribution disc 516 communicated with the air inlet pipe 515, the bottom of the air distribution disc 516 is arranged in an arc spherical structure, and a plurality of first air distribution holes are uniformly formed in the arc spherical surface of the air distribution disc 516; the ionized process gas can be primarily distributed through the arranged gas distribution disc 516, so that the uniformity of gas distribution is improved;

the layered quartz plate 522 comprises at least two layers of quartz plate structures, and a plurality of second air distribution holes are uniformly formed in the layered quartz plate 522; through the setting of above-mentioned second gas distribution hole, can further improve the even degree of gas distribution, improve the even degree of the photoresist of disk.

The vacuum reaction chamber 52 further comprises a vacuum pumping pipeline 526 and a vacuum butterfly valve 527 arranged on the vacuum pumping pipeline 526, the work of an external vacuum pump is controlled, the vacuum reaction chamber 52 can be pumped in vacuum through the vacuum pumping pipeline 526, and the flow can be conveniently adjusted through the arrangement of the vacuum butterfly valve 527.

Specifically, the wafer supporting mechanism 524 includes a support plate 5241, a lifting plate 5242, a lifting cylinder 5243, and a lifting rod 5244; an inserting groove is formed in the circumferential direction of the heating table 523, a supporting plate 5241 is inserted in the inserting groove in a sliding manner, the top of the supporting plate 5241 also comprises an opened stepped groove which is similar to the stepped groove in the correcting plate 42, the bottom of the supporting plate 5241 is connected with the lifting plate 5242, the bottom of the aluminum cavity 521 further comprises a lifting cylinder 5243 which is installed, a lifting rod 5244 is arranged at the end of a piston rod of the lifting cylinder 5243, the lifting rod 5244 penetrates through the bottom wall of the aluminum cavity 521 to be connected with the lifting plate 5242, a spring 540 sealing hose 5245 which is sleeved outside the lifting rod 5244 is further arranged, the upper end of the spring 540 sealing hose 5245 is connected with the bottom wall of the aluminum cavity 521 in a sealing manner, and the lower end of the spring 540 sealing hose 5245 is connected with a connecting plate at the end of the piston rod in a sealing manner, so that the sealing performance of an inner cavity of the aluminum cavity 521 is ensured; when the wafer lifting mechanism 524 works, the lifting cylinder 5243 is controlled to operate, and the piston rod thereof extends to drive the lifting rod 5244, the lifting plate 5242 and the supporting plate 5241 to move upwards, so that the heated and stripped wafer is lifted.

The aluminum cavity 521 further comprises an opened cavity opening 528, and the cavity opening 528 is automatically opened and closed by controlling the automatic door opening and closing mechanism 53.

Specifically, the automatic door opening and closing mechanism 53 includes a fixing plate 531, a lifting cylinder 532, a vertical guide rod 533, a guide holder 534, a lifting plate 535, a pushing cylinder 536, a transverse guide rod 537, a guide sleeve 538, an insertion rod 539, a spring 540, and a door panel 541; a lifting cylinder 532 is mounted on the fixed plate 531, a lifting plate 535 is arranged at the piston rod end of the lifting cylinder 532, two guide seats 534 are symmetrically arranged on one side of the lifting plate 535, vertical guide rods 533 are inserted in the guide seats 534 in a sliding manner, and the vertical guide rods 533 are symmetrically arranged on the fixed plate 531;

the lifting plate 535 is provided with a propulsion cylinder 536, the piston rod end of the propulsion cylinder 536 is provided with a door panel 541, four corners of one side of the door panel 541 are symmetrically provided with insertion rods 539, the insertion rods 539 are sleeved with springs 540, wherein one end of each spring 540 is abutted against the lifting plate 535, and the other end of each spring 540 is abutted against a limiting part of each insertion rod 539;

the two transverse guide rods 537 are arranged between the upper and lower insertion rods 539, the transverse guide rods 537 are symmetrically arranged on one side of the door panel 541, the transverse guide rods 537 are slidably inserted into the guide sleeves 538, and the guide sleeves 538 are symmetrically and fixedly inserted into the lifting plate 535;

when the automatic door opening and closing mechanism 53 works, firstly, the lifting cylinder 532 is controlled to act, the piston rod extends to drive the lifting plate 535 and the lifting cylinder 5243 thereon to move upwards under the guidance of the vertical guide rod 533 and the guide seat 534, when the door panel 541 moves upwards to a height position matched with the chamber port 528, the action is stopped, at this time, the pushing cylinder 536 is controlled to act, and the piston rod drives the door panel 541 to move towards the chamber port 528 under the guidance of the guide sleeve 538 and the transverse guide rod 537, until the door panel 541 is buckled with the chamber port 528. Moreover, the arrangement of the insertion rod 539 and the spring 540 can achieve the purpose of elastic buffering when the door panel 541 moves, advances and buckles, and further improves stability.

By adopting the design and the use of the structure, the invention solves the problems of simple structure, single function and poor photoresist removing effect of most of the existing plasma photoresist removing equipment when in use, is used for single-chip photoresist removing of a semiconductor wafer of 2 to 6 inches, and performs rapid chemical reaction and physical impact with the surface of the wafer by generating low-pressure and low-temperature plasma glow discharge to complete photoresist removing. And the wafer is prevented from being damaged by high-energy ions in an up-down plasma photoresist removing mode.

The control mode of the electrical components is controlled by a PLC (programmable logic controller) of a control terminal matched with the electrical components, a control circuit can be realized by simple programming of a person skilled in the art, the electrical components belong to the common general knowledge in the field, the electrical components are only used without being improved, and the electrical components are mainly used for protecting mechanical devices, so the control mode and the circuit connection are not described in detail in the invention.

The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (9)

1. Glue equipment is swept to monolithic formula radio frequency plasma, including equipment main part (1), its characterized in that: the equipment main body (1) mainly comprises a wafer box placing mechanism (2), a wafer carrying robot (3), a wafer correcting mechanism (4) and a vacuum reaction cavity system (5);

when the glue sweeping equipment works, firstly, a wafer box (24) filled with wafers is placed on a wafer box placing mechanism (2), the wafers are taken out in a vacuum adsorption mode by a wafer carrying robot (3), the wafers are carried to a wafer correcting mechanism (4) to release vacuum for correction, meanwhile, an automatic door opening and closing mechanism (53) is controlled to perform door opening action, the wafers after correction are taken out in a vacuum adsorption mode by the wafer carrying robot (3) and are placed into a reaction cavity of a vacuum reaction cavity system (5), the automatic door opening and closing mechanism (53) is controlled to perform door closing action, radio frequency plasma glue sweeping is performed through a radio frequency ionization chamber (51), after glue sweeping action, the automatic door opening and closing mechanism (53) is controlled to perform door opening action, the wafer carrying robot (3) performs vacuum adsorption on the wafers and takes out the wafers from the reaction cavity of the vacuum reaction cavity system (5), and the wafers are placed to the wafer correcting mechanism (4) for correction, after correction, the film is taken out and put into a film box (24).

2. The single-sheet type radio frequency plasma film scanning device according to claim 1, wherein the film cassette placing mechanism (2) comprises a mounting frame (21), a fixed clamping plate (22), a movable clamping plate (23) and a film cassette (24); one end of the top of the mounting rack (21) is detachably provided with the fixed clamping plate (22), the other end of the top of the mounting rack is detachably locked with the movable clamping plate (23), and the box (24) is clamped between the fixed clamping plate (22) and the movable clamping plate (23);

and a plurality of ladder draw-in grooves (25) have all been seted up to the equal symmetry in both ends of fixed cardboard (22), two parallel waist type grooves (26) have been seted up on removal cardboard (23), seted up on the top of mounting bracket (21) with waist type groove (26) match a word type groove (27) of locking, two word type groove (27) are eight style of calligraphy symmetric distribution and set up.

3. The single-wafer type radio frequency plasma glue sweeping equipment according to claim 1, wherein the robot arm (31) of the wafer handling robot (3) is made of a ceramic arm material, and a vacuum absorption groove (32) is formed in the top of the outermost end of the robot arm (31), and at least two vacuum absorption grooves (32) are formed and are sequentially arranged in an annular groove structure from inside to outside.

4. The single-wafer type RF plasma glue-sweeping apparatus according to claim 1, wherein said wafer correcting mechanism (4) comprises a correcting frame (41) and a correcting plate (42); the top circumference of correction frame (41) is equipped with a plurality of correction board (42), every a plurality of ladder standing grooves (43) have been seted up in proper order from top to bottom in the top of correction board (42).

5. The single-chip type radio frequency plasma glue-sweeping device according to claim 1, wherein said vacuum reaction chamber system (5) comprises a radio frequency ionization chamber (51), a vacuum reaction chamber (52) and an automatic door opening and closing mechanism (53); the top of the vacuum reaction cavity (52) is provided with the radio frequency ionization chamber (51), and the interior of the radio frequency ionization chamber (51) comprises a quartz cavity (511), a radio frequency anode (512), a radio frequency cathode (513) and an insulating sheet (514);

an insulating sheet (514) is circumferentially arranged on the outer wall of the quartz cavity (511), the radio-frequency anode (512) is connected to the insulating sheet (514), the radio-frequency anode (512) comprises an annular anode ring and an anode plate, and the anode plate is circumferentially arranged on the inner wall of the annular anode ring; the radio frequency negative pole (513) comprises an annular negative pole ring and negative pole pieces, wherein the annular negative pole ring is embedded on the outer wall of the quartz cavity (511), the negative pole pieces are circumferentially arranged at the top of the annular negative pole ring, and the positive pole pieces and the negative pole pieces are uniformly and alternately arranged.

6. The single-wafer type radio frequency plasma glue sweeping device according to claim 5, wherein the vacuum reaction chamber (52) is communicated with the quartz chamber (511), an air inlet pipe (515) is arranged at the top of the quartz chamber (511) in a communication manner, and the vacuum reaction chamber (52) comprises an aluminum chamber (521), a layered quartz disc (522), a heating table (523), a wafer lifting mechanism (524) and a vacuum gauge (525); the layered quartz plate (522) is embedded in the upper portion of the inner cavity of the aluminum cavity (521), the heating table (523) is arranged on the lower portion of the inner cavity of the aluminum cavity (521), the vacuum gauge (525) is further arranged on the aluminum cavity (521), and the detection end of the vacuum gauge (525) is located inside the aluminum cavity (521).

7. The single-chip radio frequency plasma glue sweeping device according to claim 6, wherein the top of the inner cavity of the quartz cavity (511) further comprises a gas distribution disc (516) communicated with the gas inlet pipe (515), the bottom of the gas distribution disc (516) is arranged in an arc spherical structure, and a plurality of first gas distribution holes are uniformly formed in the arc spherical surface of the gas distribution disc (516);

the layered quartz plate (522) comprises at least two layers of quartz plate structures, and a plurality of second air distribution holes are uniformly formed in the layered quartz plate (522);

the vacuum reaction chamber (52) further comprises a vacuum-pumping pipeline (526) and a vacuum butterfly valve (527) arranged on the vacuum-pumping pipeline (526).

8. The single-chip RF plasma glue-sweeping apparatus according to claim 6, wherein said wafer-holding mechanism (524) comprises a support plate (5241), a lifting plate (5242), a lifting cylinder (5243) and a lifting rod (5244); an inserting groove is formed in the circumferential direction of the heating table (523), a supporting plate (5241) is inserted in the inserting groove in a sliding and inserting mode, the bottom of the supporting plate (5241) is connected with a lifting plate (5242), the bottom of the aluminum cavity (521) further comprises a lifting cylinder (5243) which is installed, the piston rod end of the lifting cylinder (5243) is provided with a lifting rod (5244), and the lifting rod (5244) penetrates through the bottom wall of the aluminum cavity (521) and is connected with the lifting plate (5242);

the aluminum cavity (521) further comprises an opened cavity opening (528), and the cavity opening (528) is automatically opened and closed by controlling the automatic door opening and closing mechanism (53).

9. The single-chip type radio frequency plasma glue-sweeping device according to claim 8, wherein said automatic door opening and closing mechanism (53) comprises a fixed plate (531), a lifting cylinder (532), a vertical guide rod (533), a guide seat (534), a lifting plate (535), a pushing cylinder (536), a transverse guide rod (537), a guide sleeve (538), a plug-in rod (539), a spring (540) and a door plate (541); the fixed plate (531) is provided with the lifting cylinder (532), the piston rod end of the lifting cylinder (532) is provided with the lifting plate (535), one side of the lifting plate (535) is symmetrically provided with two guide seats (534), the vertical guide rods (533) are inserted in the guide seats (534) in a sliding manner, and the vertical guide rods (533) are symmetrically arranged on the fixed plate (531);

the lifting plate (535) is provided with the propulsion cylinder (536), the piston rod end of the propulsion cylinder (536) is provided with the door panel (541), four corners of one side of the door panel (541) are symmetrically provided with the insertion rods (539), the insertion rods (539) are sleeved with the springs (540), one end of each spring (540) is abutted against the lifting plate (535), and the other end of each spring is abutted against the limiting part of the insertion rod (539);

the two transverse guide rods (537) are positioned at the upper side and the lower side and are arranged between the insertion rods (539), one side of the door panel (541) is symmetrically provided with the transverse guide rods (537), the transverse guide rods (537) are in sliding insertion connection with the guide sleeves (538), and the guide sleeves (538) are symmetrically and fixedly inserted on the lifting plate (535).

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