CN113725074A - Heterojunction processing method and tunable array device preparation method - Google Patents
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- 239000000463 material Substances 0.000 claims abstract description 106
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- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 abstract description 10
- 238000005224 laser annealing Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 7
- 239000002096 quantum dot Substances 0.000 description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
- 229910021389 graphene Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000013532 laser treatment Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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Abstract
The invention discloses a processing method of a heterojunction, which comprises the following steps: the method comprises the following steps: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material; step two: and (3) performing nanosecond laser irradiation treatment on the area irradiated by the femtosecond laser to finish the treatment of the heterojunction in the heterojunction material. The heterojunction material is processed by the femtosecond laser and the nanosecond laser two-step annealing, so that the bonding force between the heterojunction materials can be improved, and the defects in the material can be reduced, thereby optimizing the quality of the heterojunction material; in addition, for different areas of the material, the preparation of the tunable array device can be realized by adjusting the parameters of the femtosecond laser and the nanosecond laser; compared with the traditional thermal annealing, the two-step laser annealing mode can be used for more fine processing.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric integration, in particular to a heterojunction processing method and a preparation method of a tunable array device.
Background
In recent years, with the emergence of emerging information technologies such as cloud computing, internet of things, 5G and the like, the demand of human society for information traffic is increasing day by day, and unprecedented challenges are brought to the semiconductor field, and particularly, the performance of a laser device directly influences the development of the emerging field.
In the heterojunction material composed of the two-dimensional material and the semiconductor material, a heterojunction stacked together by van der waals force exists between the two-dimensional material layer (such as graphene material) and the semiconductor material, which has very excellent physical performance and light response characteristics and has special properties that a single material does not have, but the bonding force of the structure combined by van der waals force is very weak.
In the traditional heterojunction production and preparation process based on the heterojunction material, a thermal annealing process is usually adopted to carry out optimization treatment on the heterojunction between the two-dimensional material layer and the semiconductor, but the thermal annealing process can only carry out treatment on the whole heterojunction material under the same parameter, and cannot adopt different parameters to manufacture an array device on the same heterojunction material; moreover, the requirement of the thermal annealing treatment process is complex, and the parameters such as annealing temperature, annealing time and the like are slightly deviated, so that negative effects can be generated on the heterojunction material, and the performance of the semiconductor device is further influenced.
Therefore, a processing method for a heterojunction is required, which can solve the above-mentioned problems.
Disclosure of Invention
It is an object of the present invention to provide a new solution for heterojunction processing between a two-dimensional material layer and a semiconductor material.
According to a first aspect of the present invention, there is provided a method of processing a heterojunction, comprising the steps of:
the method comprises the following steps: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material;
step two: and (3) performing nanosecond laser irradiation treatment on the area irradiated by the femtosecond laser to finish the treatment of the heterojunction in the heterojunction material.
According to a second aspect of the present invention, there is provided a method of manufacturing an array device using the above method of processing a heterojunction, comprising the steps of:
and sequentially processing the heterojunction in the processing areas on the heterojunction material until all the processing areas are processed, and manufacturing the array device.
Preferably, after the irradiation processing of one processing region is completed, parameters of the femtosecond laser and the nanosecond laser are adjusted, and then the irradiation processing is performed on the next processing region.
Preferably, in the heterojunction processing process of the processing region, the femtosecond laser and the nanosecond laser sequentially scan and irradiate the processing region until the processing region is completely irradiated.
According to one embodiment of the disclosure, the heterojunction material is processed by femtosecond laser and nanosecond laser two-step laser annealing treatment, so that the binding force of the heterojunction between the heterojunction materials can be improved, and meanwhile, the defects in the semiconductor material can be reduced, thereby optimizing the quality of the heterojunction material; compared with the traditional thermal annealing, the two-step laser annealing mode is utilized, and the processing can be more refined, namely, a tunable array device is made on the same heterojunction material, so that the semiconductor device is miniaturized in volume and diversified in function.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a diagram illustrating the effect of the heterojunction structure and the quantum dot structure after femtosecond laser and nanosecond laser processing according to the embodiment of the invention.
Figure 2 is a graph showing the performance of the heterojunction material before and after processing in one embodiment of the invention.
Fig. 3 is a schematic diagram of the fabrication and performance of an array device in the second embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Example one
The method for processing the heterojunction of the embodiment comprises the following steps:
the method comprises the following steps: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material;
in this step, the heterojunction material is composed of a semiconductor material and a two-dimensional material on top thereof, and a heterojunction is stacked between the two-dimensional material and the semiconductor material due to van der waals forces.
The irradiation of the femtosecond laser can enable the exchange of microparticles between the two-dimensional material layer and the semiconductor layer to generate doping mixing between the two-dimensional material layer and the semiconductor, so that the binding force between heterojunction materials is improved, and the loss of photons between layers can be reduced due to the mixing of the two-dimensional material layer and the semiconductor, thereby improving the light absorption capacity.
For example, under the irradiation of femtosecond laser in the graphene/quantum dot heterojunction, the carbon atoms of the graphene and the gallium atoms of the quantum dots are exchanged, so that the graphene is doped, the heterojunction at the doped and mixed graphene is improved, the binding force is stronger, and the light absorption capacity of the whole material can be improved after the graphene is doped and mixed.
Step two: and (3) performing nanosecond laser irradiation treatment on the area irradiated by the femtosecond laser to finish the treatment of the heterojunction in the heterojunction material.
After the heterojunction material is irradiated by femtosecond laser, the area is irradiated by nanosecond laser, and doping mixing is generated between the two-dimensional material and the semiconductor after the two-dimensional material is processed in the step one, so that loss of photons from layers to layers is reduced, and the light absorption capacity of the whole material is improved, therefore, the irradiation of the nanosecond laser can enable the heat transfer depth to be deeper, the heat transfer depth can be directly acted near quantum dots in the semiconductor material, lattice mismatch generated in the growth process of the quantum dots is improved, and larger mismatch stress caused by larger lattice mismatch around the quantum dots is reduced, so that the structure of the heterojunction is further improved; and after the crystal lattice is recombined, the defects around the quantum dots are reduced, which is beneficial to improving the performance of the heterojunction material, so that the processing of the heterojunction material is completed.
In a specific example, the graphene/quantum dot heterojunction material is processed, because the interface bonding between the graphene material and the quantum dot structure of the semiconductor material is poor, and the quantum dot epitaxially grown by using the molecular beam has a large lattice mismatch in a material system, which results in a large mismatch stress.
After the femtosecond laser pulse is adopted to irradiate the graphene/quantum dot heterojunction material, the carbon atoms of the graphene and the gallium atoms in the quantum dot structure are exchanged, so that the graphene is doped, the light absorption capacity of the whole material is improved, as shown in a picture in figure 1, the interface of the heterojunction structure is clear and tidy before the femtosecond laser acts, and after the femtosecond laser pulse is processed, as shown in b picture in figure 1, the cross section of the heterojunction structure has the phenomenon of intermixing;
then, nanosecond pulses are adopted to irradiate the graphene/quantum dot heterojunction material, and the heat transfer depth of the material after the femtosecond pulses are processed is deep, so that the material can be applied to the vicinity of the quantum dots to further optimize the material quality, as shown in a diagram c in fig. 1, the defects around the quantum dot structure before the nanosecond laser pulses are irradiated are more; after irradiation with a suitable nanosecond laser pulse, the defects around the quantum dot structure are significantly improved, as shown in the d-diagram in fig. 1.
The parameters of the femtosecond laser in this example are: the repetition frequency is 20MHz-200MHz, the wavelength is 740nm, the pulse width is 10fs-500fs, and the energy is 30MW/cm2-100MW/cm2The action time is 2 min; the parameters of the nanosecond laser are as follows: the repetition frequency is 500KHz-50MHz, the wavelength is 405nm, the pulse width is 100ps-200ns, and the energy is 500KW/cm2-20MW/cm2。
If different materials are subjected to two-step laser annealing treatment by femtosecond laser pulses or nanosecond laser pulses beyond the bearing range of the materials, as shown in a c diagram in fig. 1, after the high-power nanosecond laser pulses are adopted to perform laser annealing treatment on the graphene/quantum dot heterojunction materials, defects around the quantum dot structure are increased.
As shown in a diagram in fig. 2, the graphene/quantum dot heterojunction material before and after treatment is respectively put into a fiber laser system, and laser output with the pulse width of 920fs is obtained in the laser system constructed by the material before femtosecond laser and nanosecond laser treatment by using the method (shown in b diagram in fig. 2); the laser system constructed by the material processed by the femtosecond laser and the nanosecond laser by the method detects and obtains the laser output with the pulse width of 483fs (as shown in a c diagram in figure 2).
In another embodiment, the two-dimensional material and the semiconductor material are, for example, boron nitride and indium phosphide, in the experimental process, after the heterojunction structure composed of boron nitride and indium phosphide is irradiated by femtosecond laser, the positions of boron atoms and indium atoms can be displaced and doped, so that the heterojunction structure is more stable, the light absorption capacity of the whole material can be improved, and the quality of the material is further optimized after the irradiation of nanosecond laser.
In another embodiment, the two-dimensional material and the semiconductor material are, for example, boron nitride and silicon dioxide, and a heterojunction structure composed of boron nitride and silicon dioxide, after femtosecond laser irradiation, boron atoms and oxygen atoms can form new bond energy, and displacement and doping are generated between the boron atoms and the oxygen atoms, so that the bonding force of the heterojunction structure is improved, the light absorption capacity of the whole material can also be improved, and further, after nanosecond laser irradiation, the quality of the material can also be further optimized.
In other embodiments, the two-dimensional material and the semiconductor material are, for example, boron nitride and gallium arsenide, or graphene and gallium nitride, and similar reactions are generated between boron atoms and gallium atoms and between carbon atoms and gallium atoms in the experimental process, so that the heterojunction structure becomes more stable, the light absorption capability of the whole material is enhanced, and the deep part of the heterojunction material is processed in the nanosecond laser irradiation process, so that the material is further optimized.
For different heterojunction materials, parameters of the adopted two-step laser can be adjusted, specific parameters of the adjustment are determined according to specific materials, the parameters disclosed in the embodiment are only an application range for the graphene/quantum dot semiconductor heterojunction material, other heterojunction materials can be out of the parameter range (for example, femtosecond laser and picosecond laser, or nanosecond laser and picosecond laser are adopted), one point or one section of range in the parameter range can be selected, and the protection range of the invention is within as long as the two-step laser annealing method disclosed in the embodiment is adopted to process the heterojunction material.
Example two
In this embodiment, the method for manufacturing the array device by using the heterojunction processing method of the first embodiment mainly includes the following steps:
and sequentially processing the heterojunction in the processing areas on the semiconductor material until all the processing areas are processed, and manufacturing the array device.
In order to manufacture the tunable array device, after irradiation processing of one processing region is completed, parameters of the femtosecond laser and the nanosecond laser are adjusted, and then irradiation processing is performed on the next processing region. And finishing the manufacture of the array device until all the processing areas are irradiated.
Due to the specific selective regionality of the laser annealing process and the characteristic that the diameters of the femtosecond laser and the nanosecond laser are small, a plurality of processing regions on the heterojunction material can be processed independently, and different processing regions are processed by the femtosecond laser with different parameters and the nanosecond laser with different parameters according to requirements, so that processing regions with different performances are obtained, and a tunable array device is manufactured on a single semiconductor device.
In one specific example, the array device is fabricated as follows:
selecting InAs/GaAs quantum dot structure sheets with the thickness of 5mm by 5 mm;
the InAs/GaAs quantum dot chip is formed by growing on a GaAs (001) substrate by a molecular beam epitaxy method. The sample structure is that 31 pairs of Bragg reflectors are grown on a GaAs substrate, and the Bragg reflectors are made of 115nm GaAs and 134nm Al0.98Ga0.02As grows alternately. In of 1nm grown on the Bragg mirror0.18Ga0.82An As buffer layer, InAs quantum dots with height of 7nm are grown on the buffer layer, and the quantum dots are covered with In of 1nm for 5 periods0.2Ga0.8As and 1nm of In0.3Ga0.7A periodically arranged As cap layer; covering 1,3,5 layers of graphene on InAs/GaAs quantum dots by using a wet transfer method to form a graphene/quantum dot sheet;
planning a plurality of processing areas on the graphene/quantum dot sheet according to requirements, wherein the diameter of each processing area is 20 micrometers;
the treatment area was treated with a femtosecond laser as shown in a in FIG. 3, using a repetition frequency of 76MHz, a wavelength of 740nm, a pulse width of 130fs, and an energy of 52.4MW/cm2In the processing process, the femtosecond laser performs irradiation processing of femtosecond laser pulses on the processing region in a scanning mode, and the total action time is 2 minutes, namely the time for completing the processing region by the femtosecond laser scanning is 2 minutes.
After the femtosecond laser processing, the nanosecond laser is used for processing, the parameters of the nanosecond laser are repetition frequency of 5MHz, wavelength of 405nm, pulse width of 10ns and energy of 1.57MW/cm2(ii) a In this step, the nanosecond laser pulse irradiation processing is performed on the processing region in a scanning manner also using a nanosecond laser.
The incidence angle of the femtosecond laser and the incidence angle of the nanosecond laser are generally 90 degrees, and the incidence angle inclined to the heterojunction material can also be adopted for irradiation.
And finishing the treatment of the treated area after the two-step laser annealing. And then, by changing femtosecond and nanosecond parameters and acting on different processing areas on the same graphene/quantum dot sheet at equal intervals, a tunable array device is manufactured, as shown in a b diagram of fig. 3.
The parameters of the femtosecond laser and the nanosecond laser in each processing area are adjusted, so that the performances of the processing areas are different, the performances of the processing areas from 1 to 12 are as shown in a c diagram in fig. 3, and as the energy gradient of the femtosecond laser and the nanosecond laser is reduced, the modulation depth (asterisk) and the saturation flux (round point) are changed in a gradient manner, and the manufacturing of the tunable array device is completed.
The parameter adjusting ranges of the femtosecond laser and the nanosecond laser in the above embodiments are changed according to actual needs of different materials, and may be adjustment of a single parameter or cooperative adjustment of multiple parameters to achieve a desired performance.
According to the embodiment, the array device is prepared by using femtosecond laser and nanosecond laser two-step annealing, so that the bonding force between heterojunction materials can be improved, the defects in semiconductor materials can be reduced, and the quality of the heterojunction materials can be optimized; compared with the traditional thermal annealing, the two-step laser annealing mode can be used for more finely processing, namely, a tunable array device can be manufactured on the same semiconductor material.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (4)
1. A method of processing a heterojunction, comprising the steps of:
the method comprises the following steps: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material;
step two: and (3) performing nanosecond laser irradiation treatment on the area irradiated by the femtosecond laser to finish the treatment of the heterojunction in the heterojunction material.
2. A method for manufacturing a tunable array device using the heterojunction processing method of claim 1, comprising the steps of:
and sequentially processing the heterojunction in the processing areas on the heterojunction material until all the processing areas are processed, and manufacturing the array device.
3. The method of claim 2, wherein after the irradiation process of one processing region is completed, the parameters of the femtosecond laser and the nanosecond laser are adjusted, and then the irradiation process is performed on the next processing region.
4. The method of claim 2, wherein during the heterojunction processing of the processing region, the femtosecond laser and the nanosecond laser sequentially scan and irradiate the processing region until the processing region is completely irradiated.
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| US20150017817A1 (en) * | 2013-07-12 | 2015-01-15 | Toyota Jidosha Kabushiki Kaisha | Laser processing apparatus and laser processing method |
| CN107953027A (en) * | 2018-01-15 | 2018-04-24 | 哈尔滨工业大学 | A kind of femtosecond of pulse combined-nanosecond laser system of processing and processing method |
| CN112054086A (en) * | 2020-09-10 | 2020-12-08 | 南开大学 | Method for preparing silicon-based photoelectric detector with transverse junction |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425467A (en) * | 2008-11-25 | 2009-05-06 | 中国科学院安徽光学精密机械研究所 | Method for preparing transparent conductive film and transparent hetero-junction on flexible substrate |
| US20150017817A1 (en) * | 2013-07-12 | 2015-01-15 | Toyota Jidosha Kabushiki Kaisha | Laser processing apparatus and laser processing method |
| CN107953027A (en) * | 2018-01-15 | 2018-04-24 | 哈尔滨工业大学 | A kind of femtosecond of pulse combined-nanosecond laser system of processing and processing method |
| CN112054086A (en) * | 2020-09-10 | 2020-12-08 | 南开大学 | Method for preparing silicon-based photoelectric detector with transverse junction |
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