CN113725074B - Heterojunction processing method and preparation method of tunable array device - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 238000003672 processing method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 120
- 238000011282 treatment Methods 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 20
- 239000002096 quantum dot Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910021389 graphene Inorganic materials 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005411 Van der Waals force Methods 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 abstract description 9
- 238000005224 laser annealing Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000013532 laser treatment Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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Abstract
The invention discloses a heterojunction processing method, which comprises the following steps: step one: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material; step two: and after the nanosecond laser irradiation treatment is adopted for the area irradiated by the femtosecond laser, the treatment of the heterojunction in the heterojunction material is completed. The femtosecond laser and nanosecond laser two-step annealing of the method is used for processing the heterojunction materials, so that the binding force between the heterojunction materials can be improved, and meanwhile, the defects in the materials can be reduced, so that the quality of the heterojunction materials is optimized; in addition, the preparation of the tunable array device can be realized by adjusting the parameters of the femtosecond laser and the nanosecond laser for different areas of the material; compared with the traditional thermal annealing, the two-step laser annealing method can be used for more refined treatment.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric integration, in particular to a heterojunction processing method and a preparation method of a tunable array device.
Background
In recent years, with the advent of emerging information technologies such as cloud computing, internet of things and 5G, the demand of human society for information traffic is increasing, and the semiconductor field is challenged unprecedented, especially the laser device, the performance of which directly affects the development of the emerging field.
In a heterojunction material composed of a two-dimensional material and a semiconductor material, a heterojunction formed by stacking van der Waals forces exists between a two-dimensional material layer (such as a graphene material) and the semiconductor material, and the heterojunction material has very excellent physical properties and light response characteristics, has special properties which are not possessed by a single material, but has a structure combined by the van der Waals forces, and has very weak bonding force.
In the conventional production and preparation process of heterojunction based on heterojunction materials, a thermal annealing process is generally adopted to perform optimization treatment on the heterojunction between a two-dimensional material layer and a semiconductor, but the thermal annealing process can only perform treatment on the whole heterojunction material under the same parameter, and array devices cannot be manufactured on the same heterojunction material by adopting different parameters; and the thermal annealing treatment process is complex in requirement, and the parameters such as annealing temperature, time and the like are slightly controlled to be deviated, so that the heterojunction material can be negatively influenced, and the performance of the semiconductor device is further influenced.
Therefore, there is a need for a treatment method for heterojunction that can solve the above-mentioned problems.
Disclosure of Invention
An object of the present invention is to provide a new solution for heterojunction treatment between a two-dimensional material layer and a semiconductor material.
According to a first aspect of the present invention, there is provided a heterojunction processing method, characterized by comprising the steps of:
Step one: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material;
Step two: and after the nanosecond laser irradiation treatment is adopted for the area irradiated by the femtosecond laser, the treatment of the heterojunction in the heterojunction material is completed.
According to a second aspect of the present invention, there is provided a method for manufacturing an array device using the above heterojunction processing method, comprising the steps of:
And carrying out heterojunction treatment on the treatment areas on the heterojunction material in sequence until all the treatment areas are treated, and then completing the manufacture of the array device.
Preferably, after the irradiation treatment of one treatment region is completed, parameters of the femtosecond laser and the nanosecond laser are adjusted, and then the irradiation treatment is performed on the next treatment region.
Preferably, in the heterojunction treatment process of the treatment area, the femtosecond laser and the nanosecond laser sequentially scan and irradiate the treatment area until the treatment area is completely irradiated.
According to one embodiment of the present disclosure, the heterojunction materials are processed by two-step laser annealing treatment of femto-second laser and nanosecond laser, so that the bonding force of the heterojunction between the heterojunction materials can be improved, and meanwhile, defects in the semiconductor materials can be reduced, so that the quality of the heterojunction materials is optimized; compared with the traditional thermal annealing, the method can be used for more refined treatment, namely, the tunable array device is made on the same heterojunction material, so that the semiconductor device is miniaturized in size and diversified in function.
Other features of the present invention and its advantages will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is an effect diagram of a heterojunction structure and a quantum dot structure after femtosecond laser and nanosecond laser processing according to an embodiment of the invention.
Fig. 2 is a graph showing the performance of the heterojunction material before and after the treatment in accordance with the first embodiment of the present invention.
Fig. 3 is a schematic diagram of the fabrication and performance of an array device according to a second embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Example 1
The heterojunction processing method of the embodiment comprises the following steps:
Step one: performing femtosecond laser irradiation on the two-dimensional material on the surface of the heterojunction material to dope the two-dimensional material and the semiconductor material;
in this step, the heterojunction material is composed of a semiconductor material and a two-dimensional material on top of it, and a heterojunction is stacked between the two-dimensional material and the semiconductor material due to van der Waals forces.
The irradiation of the femtosecond laser can cause microscopic particles to exchange between the two-dimensional material layer and the semiconductor layer, so that doping mixing is generated between the two-dimensional material layer and the semiconductor, the binding force between heterojunction materials is improved, and the materials between the two-dimensional material layer and the semiconductor are mixed, so that the loss of photons from between the layers can be reduced, and the light absorption capacity is improved.
In the graphene/quantum dot heterojunction, carbon atoms of graphene and gallium atoms of quantum dots are exchanged under the irradiation of femtosecond laser, so that the graphene is doped, the heterojunction at the doped graphene is improved, the binding force is stronger, and the light absorption capacity of the whole material can be improved after the graphene is doped and mixed.
Step two: and after the nanosecond laser irradiation treatment is adopted for the area irradiated by the femtosecond laser, the treatment of the heterojunction in the heterojunction material is completed.
After the heterojunction material is subjected to femtosecond laser irradiation treatment, the area is irradiated by nanosecond laser, and doping mixing is generated between the two-dimensional material treated in the first step and the semiconductor, so that loss of photons from layers is reduced, the light absorption capacity of the whole material is improved, the irradiation of the nanosecond laser can enable the heat transfer depth to be deeper, the heat transfer depth can directly act on the vicinity of quantum dots in the semiconductor material, lattice mismatch generated in the growth process of the quantum dots is improved, larger mismatch stress caused by larger lattice mismatch exists around the quantum dots is reduced, and the structure of the heterojunction is further improved; and after lattice recombination, the defects around the quantum dots are reduced, which is helpful for improving the performance of the heterojunction material, so that the treatment of the heterojunction material is completed.
In a specific example, the graphene/quantum dot heterojunction material is processed, and because the interface combination between the graphene material and the semiconductor material quantum dot structure is poor, and the quantum dots grown by using molecular beam epitaxy have larger lattice mismatch, larger mismatch stress exists due to larger lattice mismatch of the material system.
After the femtosecond laser pulse is adopted to irradiate the graphene/quantum dot heterojunction material, carbon atoms of the graphene and gallium atoms in the quantum dot structure are exchanged, so that the graphene is doped, the light absorption capacity of the whole material is improved, the interface of the heterojunction structure before the action of the femtosecond laser is clear and tidy as shown in a graph in fig. 1, and the cross section of the heterojunction structure is mixed as shown in a graph in fig. 1 after the femtosecond laser pulse treatment;
Then, the graphene/quantum dot heterojunction material is irradiated by adopting nanosecond pulse, and the heat transfer depth of the material after femtosecond pulse treatment is deeper, so that the material can act near the quantum dot, the material quality is further optimized, and as shown in a graph c in fig. 1, the defects around the quantum dot structure before nanosecond laser pulse irradiation are more; after irradiation with a suitable nanosecond laser pulse, the defects around the quantum dot structure are significantly improved as shown in figure 1 d.
The parameters of the femtosecond laser in this embodiment are: the weight frequency is 20MHz-200MHz, the wavelength is 740nm, the pulse width is 10fs-500fs, the energy is 30MW/cm 2-100MW/cm2, and the action time is 2min; the parameters of the nanosecond laser are as follows: the repetition frequency is 500KHz-50MHz, the wavelength is 405nm, the pulse width is 100ps-200ns, and the energy is 500KW/cm 2-20MW/cm2.
If femtosecond laser pulses or nanosecond laser pulses exceeding the bearing range are used for carrying out two-step laser annealing treatment on different materials, as shown in a graph c in fig. 1, after the graphene/quantum dot heterojunction material is subjected to laser annealing treatment by adopting high-power nanosecond laser pulses, defects around a quantum dot structure can be increased.
As shown in a graph in fig. 2, graphene/quantum dot heterojunction materials before and after treatment are respectively put into an optical fiber laser system, and laser output with a pulse width of 920fs (shown in a graph b in fig. 2) is obtained by the laser system constructed by the materials before femtosecond laser treatment and nanosecond laser treatment by the method; the laser system constructed by the material after femtosecond laser and nanosecond laser processing by the method detects and obtains the laser output with the pulse width of 483fs (shown in a graph c in fig. 2).
In another embodiment, the two-dimensional material and the semiconductor material are, for example, boron nitride and indium phosphide, and in the experimental process, after the heterojunction structure composed of boron nitride and indium phosphide is irradiated by femtosecond laser, the positions of boron atoms and indium atoms are displaced and doped, so that the heterojunction structure is more stable, the light absorption capacity of the whole material can be improved, and the material quality is further optimized after irradiation by nanosecond laser is performed.
In another embodiment, the two-dimensional material and the semiconductor material are, for example, boron nitride and silicon dioxide, and a heterojunction structure composed of boron nitride and silicon dioxide, after being irradiated by femto-second laser, the boron atoms and oxygen atoms form new bond energy, and displacement and doping are generated between the boron atoms and the oxygen atoms, so that the binding force of the heterojunction structure is improved, the light absorption capacity of the whole material can be improved, and further, after being irradiated by nanosecond laser, the quality of the material can be optimized.
In other embodiments, the two-dimensional material and the semiconductor material are, for example, boron nitride and gallium arsenide, or graphene and gallium nitride, and the like, similar reactions are generated between boron atoms and gallium atoms and between carbon atoms and gallium atoms in the experimental process, so that the heterojunction structure becomes more stable, the absorption capacity of the whole material to light is also enhanced, and the deep part of the heterojunction material is processed in the process of further adopting nanosecond laser irradiation, so that the material is further optimized.
For different heterojunction materials, the two steps of laser parameters are adjusted, the specific parameters are adjusted according to the specific materials, the parameters disclosed in the embodiment are only applicable ranges of the graphene/quantum dot semiconductor heterojunction materials, other heterojunction materials can be beyond the range of the parameters (for example, femtosecond laser and picosecond laser or nanosecond laser and picosecond laser) or one point or a section of the range of the parameters can be adopted, and the two steps of laser annealing method disclosed in the embodiment is only used for processing the heterojunction materials, so that the method is within the protection range of the invention.
Example two
In this embodiment, the method for preparing an array device by adopting the heterojunction processing method of the first embodiment mainly includes the following steps:
And sequentially carrying out heterojunction treatment on the treatment areas on the semiconductor material until all the treatment areas are treated, and then completing the manufacture of the array device.
In order to manufacture the tunable array device, after the irradiation processing of one processing area is completed, parameters of the femtosecond laser and the nanosecond laser can be adjusted, and then the irradiation processing of the next processing area is performed. And completing the manufacture of the array device after all the processing areas are irradiated.
Due to the characteristic of the special selective area of the laser annealing process and the characteristic of small spot diameters of the femtosecond laser and the nanosecond laser, a plurality of processing areas on the heterojunction material can be processed independently, and the femtosecond laser with different parameters and the nanosecond laser with different parameters are adopted for processing different processing areas according to the requirements, so that the processing areas with different performances are obtained, and a tunable array device is manufactured on a single semiconductor device.
In a specific example, the array device is specifically fabricated as follows:
Selecting 5mm of InAs/GaAs quantum dot structure sheets;
The InAs/GaAs quantum dot chip is formed by growing on a GaAs (001) substrate by a molecular beam epitaxy method. The sample structure is that 31 pairs of Bragg reflectors are grown on the substrate GaAs, and the Bragg reflectors are alternately grown by 115nm GaAs and 134nm Al 0.98Ga0.02 As. Growing 1nm In 0.18Ga0.82 As buffer layer on Bragg reflector, growing 7nm high InAs quantum dot on the buffer layer, and covering 5 periods of 1nm In 0.2Ga0.8 As and 1nm In 0.3Ga0.7 As periodically arranged cover layers on the quantum dot; covering 1,3,5 layers of graphene on InAs/GaAs quantum dots by using a wet transfer method to form graphene/quantum dot sheets;
planning a plurality of treatment areas on the graphene/quantum dot sheet according to the requirement, wherein the diameter of the treatment areas is 20 microns;
As shown in FIG. 3a, the treatment area is treated by a femtosecond laser, the treatment area is irradiated by the femtosecond laser in a scanning mode during the treatment process, the total acting time is 2 minutes, namely, the time for finishing the treatment area by the femtosecond laser scanning is 2 minutes, wherein the treatment area is treated by the femtosecond laser with the repetition frequency of 76MHz, the wavelength of 740nm, the pulse width of 130fs and the energy of 52.4MW/cm 2.
After femtosecond laser treatment, nanosecond laser is used for treatment, the parameters of the nanosecond laser are the repetition frequency of 5MHz, the wavelength of 405nm, the pulse width of 10ns and the energy of 1.57MW/cm 2; in this step, the nanosecond laser pulse irradiation process is performed on the processing region by scanning with a nanosecond laser.
The incidence angle of the femtosecond laser and the incidence angle of the nanosecond laser are generally 90 degrees, and the incidence angle inclined to the heterojunction material can be adopted for irradiation.
And the treatment is finished in the treatment area after the two-step laser annealing. Subsequently, by changing the parameters of femto-seconds and nanoseconds, different processing areas which act on the same graphene/quantum dot sheet at equal intervals are made into a tunable array device, as shown in a b diagram of fig. 3.
The performance of each processing region is different because the parameters of the femtosecond laser and the nanosecond laser in each processing region are adjusted, the performance of each processing region is shown in a graph c in fig. 3, and as the energy of the femtosecond laser and the nanosecond laser is reduced in a gradient manner, the modulation depth (asterisk) and the saturation flux (dots) are changed in a gradient manner, so that the manufacture of the tunable array device is completed.
The parameter adjustment ranges of the femtosecond laser and the nanosecond laser in the embodiment are changed according to the actual needs of different materials, and can be single parameter adjustment or cooperative adjustment of multiple parameters so as to achieve the required performance.
According to the embodiment, the array device is prepared by two-step annealing of the femtosecond laser and the nanosecond laser, so that the binding force between heterojunction materials can be improved, the defects in the semiconductor materials are reduced, and the quality of the heterojunction materials is optimized; compared with the traditional thermal annealing, the two-step laser annealing mode can be used for more refined treatment, namely, tunable array devices are made on the same piece of semiconductor material.
While certain specific embodiments of the invention have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (7)
1. The preparation method of the heterojunction tunable array device is characterized by comprising the following steps of:
step one: for a heterojunction material formed by stacking a semiconductor material and a two-dimensional material on the top of the semiconductor material through van der Waals force, defining an area array to be processed on the heterojunction material, performing femtosecond laser irradiation on the two-dimensional material on the surface of the area to be processed, so that microscopic particles are exchanged between the two-dimensional material layer and the semiconductor layer, and the purpose of doping the two-dimensional material and the semiconductor material is achieved; step two: the method comprises the steps of performing nanosecond laser irradiation treatment on a region subjected to femtosecond laser irradiation and subjected to microscopic particle exchange between a two-dimensional material layer and a semiconductor layer, so that the irradiation of nanosecond laser is directly applied to quantum dots in the semiconductor material, and a heterojunction treatment region is obtained; and carrying out heterojunction treatment on the areas to be treated on the heterojunction material in sequence until all the treatment areas are subjected to heterojunction treatment, thereby obtaining the heterojunction tunable array device.
2. The method for manufacturing a heterojunction tunable array device according to claim 1, wherein in the array of the areas to be processed, different processing areas are subjected to heterojunction processing by using different parameters of femtosecond laser and different parameters of nanosecond laser.
3. The method for manufacturing a heterojunction tunable array device according to claim 1 or2, wherein the femtosecond laser irradiation is to sequentially perform femtosecond laser scanning irradiation on each region to be processed in the region array to be processed by using a femtosecond laser beam; the nanosecond laser irradiation is to sequentially perform nanosecond laser scanning irradiation on each region to be processed in the region array to be processed by adopting a nanosecond laser beam.
4. The method of manufacturing a heterojunction tunable array device of claim 1 or 2, wherein the heterojunction material is a graphene/quantum dot heterojunction material; the parameters of the femtosecond laser are as follows: the weight frequency is 20MHz-200MHz, the wavelength is 740nm, the pulse width is 10fs-500fs, the energy is 30 MW/cm 2 -100MW/cm2, and the action time is 2min; the parameters of the nanosecond laser are as follows: the repetition frequency is 500KHz-50MHz, the wavelength is 405nm, the pulse width is 100ps-200ns, and the energy is 500KW/cm 2 -20MW/cm2.
5. A method of fabricating a heterojunction tunable array device as claimed in claim 1 or 2, wherein the two-dimensional material and the semiconductor material are boron nitride and indium phosphide, respectively.
6. A method of fabricating a heterojunction tunable array device as claimed in claim 1 or 2, wherein the two-dimensional material and the semiconductor material are boron nitride and silicon dioxide, respectively.
7. A method of fabricating a heterojunction tunable array device as claimed in claim 1 or 2, wherein said two-dimensional material and semiconductor material are boron nitride and gallium arsenide, respectively.
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