CN100511734C - InGaAs/GaAs quantum dot epitaxial structure of 1.02-1.08 millimeter wave band and manufacturing method thereof - Google Patents

InGaAs/GaAs quantum dot epitaxial structure of 1.02-1.08 millimeter wave band and manufacturing method thereof Download PDF

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CN100511734C
CN100511734C CNB2005100863149A CN200510086314A CN100511734C CN 100511734 C CN100511734 C CN 100511734C CN B2005100863149 A CNB2005100863149 A CN B2005100863149A CN 200510086314 A CN200510086314 A CN 200510086314A CN 100511734 C CN100511734 C CN 100511734C
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于理科
徐波
王占国
金鹏
赵昶
张秀兰
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Abstract

This invention relates to semiconductor laser technique field and provides one InGaAs/GaAs SK growth high intensity quantum point extension layer structure to realize this extension molecule beam semiconductor quantum laser materials method. Through accurate control molecule beam extension growing condition and using submolecule single layer to control quantum points component, extensive thickness, shape structure to realize room temperature PL spectrum of 1.02-1.08 micrometer band.

Description

1.02-1.08 micron waveband InGaAs/GaAs quantum dot epitaxial structure and manufacture method thereof
Technical field
The present invention relates to semiconductor laser field, particularly a kind of 1.02-1.08 micron waveband InGaAs/GaAs quantum dot epitaxial structure and manufacture method thereof.
Background technology
1.02-1.08 an important use of micron waveband semiconductor laser just can be used for the pumping optical fiber laser.Because fiber laser has high-gain, the slope efficiency height, line width, but wide-band tuning, perfect heat-dissipating, compact conformation, microminiaturized, full curing and the characteristics such as flexibility natural with Transmission Fibers, therefore it is in communication, military, fields such as medical treatment and optical information processing all will have broad application prospects, particularly at optical communication field, along with light wave divide with and the development of Optical Time Division Multiplexing Technology, fiber laser can satisfy communication system well the requirements at the higher level of light source will be considered to the following distance of growing, big capacity, the perfect light source of ultra high-speed optical fiber communication.But traditional fiber laser all is to realize that as the pumping source of self stimulated radiation is luminous with the solid state laser (DPSL) of semiconductor laser diode (LD) pumping.For example, with wavelength be GaAs/AlGaAs laser pumping Nd:YAG solid laser material about 800nm to produce wavelength be 1.06 microns laser, realizing that with the two Yb3+/Er3+ fiber lasers of mixing of the laser pumping of this wave band 1.55 microns stabilized lasers of single-frequency export.
Undoubtedly, the introducing of DPSL has increased the cost of fiber laser greatly, and the DPSL volume is big, poor radiation, the low characteristics such as (for LD) of electricity conversion have hindered the trend of photonic device to the miniaturization integrated development, affect popularizing of optical fiber communication.If can save DPSL, adopt small and exquisitely, the LD of low-power consumption directly carries out pumping to fiber laser and will address this problem well.Quantum dot laser is exactly the product of this thought.
Because electronics is all restricted on three dimensions in the quantum dot, theory analysis shows that quantum dot laser (QDLD) has excellent more character, as, high electro-optical efficiency (more than 85%), ultralow threshold current density (J Th≤ 2A/cm 2, the J of at present best QWLD Th=50A/cm 2), high threshold current temperature stability (T in theory 0=∞), the differential gain (that is at least QWLD more than the magnitude) of superelevation and high modulation bandwidth and the no pillbox work etc. of coughing under the direct current modulation, therefore, quantum dot laser is the focus direction of international research always.
The present topmost method of the epitaxial growth of quantum dot is self-organizing (SK) growth. it is applicable to that lattice mismatch is bigger, but the interface energy between strained epilayer and substrate is not very big heterojunction material system.The SK epitaxial growth starting stage is the two-dimensional layer growth, has only several atomic layers thick usually, is referred to as soakage layer.Along with the increase of bed thickness, strain energy constantly accumulates, and when reaching some critical thickness zc, epitaxial growth then carries out the transition to three-dimensional island growth by the two-dimensional layer growth, to reduce the energy of system.Around the island of the nanometer scale size that the three-dimensional island growth initial stage forms is dislocation-free.If with the big material of energy gap it is surrounded, the charge carrier in the island is subjected to three-dimensional restriction, becomes quantum dot.On the individual layer quantum dot basis of growth, repeat above-mentioned growth course and can obtain quantum-dot superlattice structure.The difficulty that this method exists is that the nucleation of quantum dot on soakage layer is unordered, its shape, size; Distributing homogeneity and density are wayward.How by optimizing growth conditions, the plane density that improves the geomery distributing homogeneity of quantum dot and improve point is the forward position and the hot fields of present nanometer technology.
Summary of the invention
The present invention adopts InAs and GaAs monoatomic layer form alternating growth according to a certain ratio by optimizing growth conditions, by regulating In component and corresponding deposition of materials thickness, realizes the high uniformity of quantum dot, and high density is (greater than 10 11/ cm 2) growth.Experimental results show that this method has very strong controllability and repeatability.The present invention particularly is particularly related to a kind of molecular beam epitaxy accretion method by InAs and GaAs monoatomic layer alternating growth 1.02-1.08 micron InGaAs high density quantum dot.The epitaxial growth method that relates to high power semi-conductor 1.02-1.08 micron waveband InGaAs/GaAs quantum point laser material.
Technical scheme
A kind of growing method of 1.02-1.08 micron waveband InGaAs/GaAs quanta point material is characterized in that step comprises:
Form the GaAs transition zone on the GaAs substrate, thickness is 300-500nm, and growth temperature is 600-610 ℃, pauses then 20-40 second, reduces the temperature to 480-520 ℃ simultaneously;
Growth forms the InGaAs quantum-dot structure on the GaAs transition zone, thickness is 5-8ML, at first forms the InAs layer, and thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, temperature is 480-510 ℃, pause 1-10 second, the GaAs layer of growing then, thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, temperature is 480-510 ℃, pause 1-10 second; By above process circulation repeatedly, till reaching gross thickness 5-8ML;
Form the GaAs sealer on the InGaAs quantum-dot structure, thickness is 5-15nm, and temperature is 480-510 ℃.
Bed thickness is the GaAs layer circulation method repeatedly that some molecular monolayer InAs layers and some molecular monolayer are adopted in the growth of the InGaAs quantum-dot structure of 5-8ML, and introduces the necessary time interval in the growth course.
A kind of 1.02-1.08 micron waveband InGaAs/GaAs quantum point laser material epitaxial layer structure is characterized in that, is made up of following structure:
Ground floor is the GaAs transition zone;
The second layer is Al 0.5Ga 0.5The As ducting layer;
The 3rd layer is the AlGaAs transition zone, and the component of Al reduces from the 50%-10% linearity;
The 4th layer is the GaAs transition zone;
Layer 5 is an InGaAs quanta point material layer;
Layer 6 is the GaAs transition zone;
Layer 7 is the AlGaAs transition zone, and the component of Al increases from 10%-50% is linear;
The 8th layer is Al 0.5Ga 0.5The As ducting layer;
The 9th layer is the GaAs cover layer.
Described ground floor GaAs transition zone doping Si element makes it to become the N type, and concentration is 1*E18/cm 3To 5*E18/cm 3, thickness is the 300-500 nanometer.
Described second layer Al 0.5Ga 0.5The Wave guide layer-doped Si element of As makes it to become the N type, and concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm.
The thickness of described the 3rd layer of AlGaAs is 75-150nm.
Described the 4th layer of GaAs transition region thickness is 20-100nm.
Described layer 5 InGaAs quanta point material layer thickness is 5-8ML.
Described layer 6 GaAs transition region thickness is 20-100nm.
The thickness of described layer 7 AlGaAs is 75-150nm.
Described the 8th layer of Al 0.5Ga 0.5The Wave guide layer-doped Be element of As makes it to become the P type, and concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm.
Described the 9th layer of GaAs cover layer doping Be element makes it to become the P type, and concentration is 1*E19/cm 3To 2*E19/cm 3, thickness is the 300-500 nanometer.
A kind of growing method of 1.02-1.08 micron InGaAs/GaAs high density quantum point laser material is characterized in that its step comprises:
Form the GaAs transition zone on the GaAs substrate, doping Si element to concentration is 1*E18/cm 3To 5*E18/cm 3, thickness is 300-500nm, growth temperature is 600-610 ℃, grows pause 20-40 second;
Al grows on the GaAs transition zone 0.5Ga 0.5The As light limiting layer, doping Si element to concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm, growth temperature is 600-610 ℃, grows pause 20-40 second;
At Al 0.5Ga 0.5Growth AlGaAs transition zone on the As light limiting layer, the Al component is from 50%-10%, and linearity reduces, and thickness is 75-150nm, and growth temperature is 600-610 ℃;
Growth GaAs transition zone on the AlGaAs transition zone, thickness is 20-100nm, growth temperature is 600-610 ℃, pause 20-40 second;
Temperature is dropped to 480-510 ℃, growth InGaAs high density quanta point material on the GaAs transition zone, thickness is 5-8ML, pause 20-40 second;
Temperature is raised to 600-610 ℃;
Growth GaAs transition zone, thickness is 20-100nm, growth temperature 600-610 ℃, pause 20-40 second;
Growth AlGaAs transition zone on the GaAs transition zone, the Al component increases from 10%-50% is linear, and thickness is 75-150nm, and growth temperature is 600-610 ℃;
Al grows on the AlGaAs transition zone 0.5Ga 0.5The As light limiting layer, doping Be element to concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm, growth temperature is 600-610 ℃, pause 20-40 second;
At Al 0.5Ga 0.5Growth GaAs contact layer on the As light limiting layer, doping Be element to concentration is 1*E19/cm 3To 2*E19/cm 3, thickness is 300-500nm, growth temperature is 600-610 ℃.
The meaning of comparing and being had with background technology
The present invention has following meaning:
Among the present invention, the plane density of quantum dot is up to 10 11/ cm 2More than, and quantum dot shown good dimensional homogeneity, these all are that common SK mode growth quantum point is incomparable.High like this dot density will directly reduce the threshold current density of laser, improve the differential gain.
Because quantum dot laser has the incomparable ultralow threshold current density of DPSL, minimum volume, high current temperature stability, the differential gain of superelevation and high plurality of advantages such as modulation bandwidth, therefore will have very big market application foreground and commercial value.
Fig. 4 is 1.02-1.08 micron high density quantum dot laser structure and molecular beam epitaxial growth Parameter Map.
Description of drawings
Fig. 1 is the material core epitaxial layer structure schematic diagram of quantum dot.
Fig. 2 is quantum dot atomic force (AFM) microphotograph (500nm x 500nm) figure.
Fig. 3 is high density quantum dot of the present invention and a common SK growth pattern quantum dot PL spectrum peak luminous intensity comparison diagram under the 77K.
Fig. 4 is the epitaxial structure and the epitaxial growth method schematic diagram of 1.02-1.08 micron waveband InGaAs/GaAs high density quantum dot laser.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail
Fig. 1 is a core concept of the present invention, i.e. the epitaxial growth forming process of high density quantum dot.
At first, form GaAs transition zone 1 on GaAs (001) substrate, thickness is 300-500nm, and growth temperature is 600-610 ℃, pauses then 20-40 second, reduces the temperature to 480-520 ℃ simultaneously;
Secondly, growth forms InGaAs quantum-dot structure 2 on GaAs transition zone 1, and thickness is 5-8ML.This layer point is grown according to following steps: at first form deposit InAs material layer, thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, temperature is 480-510 ℃, pause 1-10 second, deposit GaAs layer then, thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, temperature is 480-510 ℃, pause 1-10 second; By above process circulation repeatedly, till reaching gross thickness 5-8ML.Optimum organization by above growth parameter(s) just can grow high density (10 11/ cm 2More than) the InGaAs quantum dot.
At last, growth GaAs sealer 3 on InGaAs quantum-dot structure 2, thickness is 5-15nm, temperature is 480-510 ℃.
Fig. 2 is that quantum dot atomic force (AFM) microphotograph (500nm x 500nm) utilizes statistical software to analyze this AFM photo to obtain, and the density of quantum dot reaches 1.1 x 10 11/ cm 2, and the height fluctuation of point is little, has good uniformity.And the quantum dot density that common SK growth pattern is prepared is 5-8 x 10 10/ cm 2, the density that very difficult realization is high like this.
Fig. 3 is high density quantum dot of the present invention and the luminous intensity contrast of common SK growth pattern quantum dot PL spectrum peak under the 77K.
Peak 1 is that (density is 1.1 x 10 to quantum dot of the present invention 11/ cm 2) PL composes the peak, peak 2 and peak 3 are InGaAs quantum dot PL spectrum peaks of preparing with common SK growth pattern, the density of its point is respectively 6.5 x 10 10/ cm 2, 5 x 10 10/ cm 2, the intensity at peak 1 is far longer than peak 2,3, and the plane density of the present invention by the increase and decrease quantum dot is described, has greatly strengthened the luminous efficiency of device.
Fig. 4 is the epitaxial structure and the epitaxial growth method schematic diagram of 1.02-1.08 micron waveband InGaAs/GaAs high density quantum dot laser.
As shown in Figure 4, ground floor growth GaAs transition zone, doping Si element makes it to become the N type, and concentration is 1*E18/cm 3To 5*E18/cm 3, thickness is the 300-500 nanometer, growth temperature 600-610 ℃, growth rate is 0.2-0.7 monoatomic layer/second.Dead time of growing then is 20-40 second.
Second layer growth Al 0.5Ga 0.5As glistening light of waves limiting layer, doping Si element makes it to become the N type, and concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.
The 3rd layer growth AlGaAs layer, wherein the component of Al reduces from the 50%-10% linearity, and thickness is 75-150nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.
The 4th layer growth GaAs transition region thickness is 20-100nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.Growth temperature is reduced to 480-510 ℃.
Layer 5 growth InGaAs high density quanta point material layer thickness is 5-8ML.Pause 20-40 second.Growth temperature is risen to 600-610 ℃.
Layer 6 growth GaAs transition region thickness is 20-100nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.
Layer 7 growth AlGaAs transition zone, wherein the Al component increases from 10%-50% is linear, and thickness is 75-150nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.
The 8th layer growth Al 0.5Ga 0.5The As light limiting layer, doping Be element makes it to become the P type, and concentration is 1*E18/cm 3To 3*E18/cm 3Thickness is 1000-2000nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.Dead time of growing then is 20-40 second.
The 9th layer growth GaAs contact layer, doping Be element makes it to become the P type, and concentration is 1*E19/cm 3To 2*E19/cm 3, thickness is 300-500nm.Growth temperature 600-610 ℃, growth rate is 0.2-0.4 monoatomic layer/second.

Claims (11)

1. a 1.02-1.08 micron waveband InGaAs/GaAs quantum point laser material epitaxial layer structure is characterized in that, is made up of following structure:
Ground floor is the GaAs transition zone;
The second layer is Al 0.5Ga 0.5The As ducting layer;
The 3rd layer is the AlGaAs transition zone, and the component of Al reduces from the 50%-10% linearity;
The 4th layer is the GaAs transition zone;
Layer 5 is an InGaAs quanta point material layer;
Layer 6 is the GaAs transition zone;
Layer 7 is the AlGaAs transition zone, and the component of Al increases from 10%-50% is linear;
The 8th layer is Al 0.5Ga 0.5The As ducting layer;
The 9th layer is the GaAs cover layer.
2. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described ground floor GaAs transition zone doping Si element makes it to become the N type, concentration is 1*E18/cm 3To 5*E18/cm 3, thickness is the 300-500 nanometer.
3. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described second layer Al 0.5Ga 0.5The Wave guide layer-doped Si element of As makes it to become the N type, and concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm.
4. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that the thickness of described the 3rd layer of AlGaAs is 75-150nm.
5. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described the 4th layer of GaAs transition region thickness is 20-100nm.
6. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described layer 5 InGaAs quanta point material layer thickness is 5-8ML.
7. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described layer 6 GaAs transition region thickness is 20-100nm.
8. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that the thickness of described layer 7 AlGaAs is 75-150nm.
9. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described the 8th layer of Al 0.5Ga 0.5The Wave guide layer-doped Be element of As makes it to become the P type, and concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm.
10. by the described 1.02-1.08 micron waveband of claim 1 InGaAs/GaAs quantum point laser material epitaxial layer structure, it is characterized in that described the 9th layer of GaAs cover layer doping Be element makes it to become the P type, concentration is 1*E19/cm 3To 2*E19/cm 3, thickness is the 300-500 nanometer.
11. the growing method of a 1.02-1.08 micron InGaAs/GaAs high density quantum point laser material is characterized in that its step comprises:
Form the GaAs transition zone on the GaAs substrate, doping Si element to concentration is 1*E18/cm 3To 5*E18/cm 3, thickness is 300-500nm, growth temperature is 600-610 ℃, grows pause 20-40 second;
Al grows on the GaAs transition zone 0.5Ga 0.5The As light limiting layer, doping Si element to concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm, growth temperature is 600-610 ℃, grows pause 20-40 second;
At Al 0.5Ga 0.5Growth AlGaAs transition zone on the As light limiting layer, the Al component is from 50%-10%, and linearity reduces, and thickness is 75-150nm, and growth temperature is 600-610 ℃;
Growth GaAs transition zone on the AlGaAs transition zone, thickness is 20-100nm, growth temperature is 600-610 ℃, pause 20-40 second;
Temperature is dropped to 480-510 ℃, growth InGaAs high density quanta point material on the GaAs transition zone, the growth pattern of quanta point material is: at first form the InAs layer, thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, pause 1-10 second, the GaAs layer of growing then, thickness is 0.7-1.4ML, growth rate 0.2-0.5ML/s, pause 1-10 second; By above process circulation repeatedly, till reaching gross thickness 5-8ML; Then, pause 20-40 second;
Temperature is raised to 600-610 ℃;
Growth GaAs transition zone, thickness is 20-100nm, growth temperature 600-610 ℃, pause 20-40 second;
Growth AlGaAs transition zone on the GaAs transition zone, the Al component increases from 10%-50% is linear, and thickness is 75-150nm, and growth temperature is 600-610 ℃;
Al grows on the AlGaAs transition zone 0.5Ga 0.5The As light limiting layer, doping Be element to concentration is 1*E18/cm 3To 3*E18/cm 3, thickness is 1000-2000nm, growth temperature is 600-610 ℃, pause 20-40 second;
At Al 0.5Ga 0.5Growth GaAs contact layer on the As light limiting layer, doping Be element to concentration is 1*E19/cm 3To 2*E19/cm 3, thickness is 300-500nm, growth temperature is 600-610 ℃.
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应变自组装InAs/GaAs量子点材料与器件光学性质研究. 钱家骏，徐波，陈涌海，叶小玲，韩勤，王占国.半导体学报，第24卷第z1期. 2003 *

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CN101505034B (en) * 2005-08-31 2010-12-08 中国科学院半导体研究所 InGaAs/GaAs quantum dot epitaxial structure in wave band between 1.02 to 1.08 micrometer and manufacturing method thereof
CN111342345A (en) * 2018-12-18 2020-06-26 山东华光光电子股份有限公司 Preparation method of GaAs-based quantum dot laser
CN111342345B (en) * 2018-12-18 2021-05-07 山东华光光电子股份有限公司 Preparation method of GaAs-based quantum dot laser

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