CN113708766A - Configurable accurate delay circuit structure for high-speed ADC - Google Patents
Configurable accurate delay circuit structure for high-speed ADC Download PDFInfo
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- H03—ELECTRONIC CIRCUITRY
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- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
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Abstract
The invention discloses a configurable accurate time delay circuit structure for a high-speed ADC (analog to digital converter), which belongs to the field of electronic circuits and comprises a PMOS (P-channel metal oxide semiconductor) transistor P1NMOS transistor N1And a capacitor CLPMOS tube P1Gate terminal of and NMOS transistor N1Are commonly connected to an input voltage VinPMOS tube P1Drain terminal and NMOS transistor N1The drain terminals of the first and second transistors are commonly connected to an output voltage VoutCapacitor CLOne end of which is connected with an output voltage VoutThe other end is grounded; also includes a resistor R1And a resistance R2And a plurality of capacitors, the resistor R1Is connected in series with the PMOS tube P1The drain terminal of, the resistance R2Is connected in series with the NMOS tube N1The drain terminal of (1); a plurality of capacitors connected in parallel to the capacitor CLAnd an output voltage VoutIs connected in parallel to the capacitor CLAnd an output voltage VoutEach capacitor between the two capacitors is respectively connected with a switching tube in series; the switch tube is an NMOS tube, and the drain ends of the switch tube are respectively connected with corresponding capacitorsAnd the source ends are all grounded.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a configurable accurate delay circuit structure for a high-speed ADC (analog to digital converter).
Background
An ADC (analog-to-digital converter) is a circuit that converts an analog signal into a digital signal, and is widely used in the fields of military, communication, industry, aerospace, precision instruments, and the like. With increasing demands on the performance of the instrument, high-speed ADCs (conversion times typically less than 1 μ s) are becoming an important branch in analog-to-digital converters.
In designing an ADC, a delay circuit is a commonly used circuit structure, which can delay signals in time sequence, especially for synchronization of clock signals and the like. The most common circuit for time delay is a CMOS inverter delay circuit, which has a structure as shown in FIG. 1 and is used when an input voltage V is appliedinWhen the voltage is equal to 0V, the PMOS tube is conducted and the NMOS tube is cut off, and the internal resistance R of the PMOS tube ispAnd a capacitor CLTogether determine the RC delay τ:
τ=Rp·CL
if the propagation delay means: at "VinChange to 50% VDDTo VoutChange to 50% VDD"time between the two", the propagation delay t can be obtainedpThe calculation formula of (2) is as follows:
tp=ln2·τ=0.69RpCL
when V isin=VDDWhen the NMOS transistor is turned on, the PMOS transistor is turned off, and the propagation delay t can be obtainednIs (R)nRepresenting the internal resistance of the NMOS tube):
tn=0.69RnCL
the total propagation delay t of the whole CMOS inverter delay circuit is as follows:
however, RpAnd RnNot constant but a non-linear function of the voltage across the transistor, and due to process level limitations, RpAnd RnThe delay circuit cannot be accurately controlled, so that when the delay circuit is designed according to the traditional delay circuit, the error between the delay time obtained by the actual circuit and the original design purpose is very large, and the effect of accurate delay cannot be achieved; furthermore, many delay circuits require delay time configurable functionality, i.e. different delay times are used in different situationsTo meet various requirements, which this circuit does not have.
Disclosure of Invention
The invention aims to provide a configurable accurate delay circuit structure for a high-speed ADC (analog to digital converter), which aims to solve the problems that a large error exists between actual delay obtained by a traditional delay circuit and initial design delay, and delay time cannot be configured.
In order to solve the above technical problems, the present invention provides a configurable precise delay circuit structure for high-speed ADC, comprising a PMOS transistor P1NMOS transistor N1And a capacitor CLPMOS tube P1Gate terminal of and NMOS transistor N1Are commonly connected to an input voltage VinPMOS tube P1Drain terminal and NMOS transistor N1The drain terminals of the first and second transistors are commonly connected to an output voltage VoutCapacitor CLOne end of which is connected with an output voltage VoutThe other end is grounded;
the configurable precise delay circuit structure further comprises:
resistance R1And a resistance R2Said resistance R1Is connected in series with the PMOS tube P1The drain terminal of, the resistance R2Is connected in series with the NMOS tube N1The drain terminal of (1);
a plurality of capacitors connected in parallel to the capacitor CLAnd an output voltage VoutIn the meantime.
Optionally, connected in parallel to the capacitor CLAnd an output voltage VoutAnd each capacitor between the two capacitors is respectively connected with a switching tube in series.
Optionally, the switch tube is an NMOS tube, the drain terminals of the switch tube are respectively connected to the corresponding capacitors, and the source terminals of the switch tube are all grounded.
Optionally, the resistor R1Is a PMOS tube P1Internal resistance RpAbove 3 orders of magnitude, the resistance R2Is an NMOS tube N1Internal resistance RnAbove 3 orders of magnitude.
Optionally, the PMOS tube P1Source terminal of the transformer is connected with a voltage VDDThe NMOS tube N1The source terminal of which is grounded.
The invention also provides a delay chain circuit formed by serially connecting the configurable precise delay circuit structures for the high-speed ADC.
In the configurable precise time delay circuit structure for the high-speed ADC, the PMOS pipe P is included1NMOS transistor N1And a capacitor CLPMOS tube P1Gate terminal of and NMOS transistor N1Are commonly connected to an input voltage VinPMOS tube P1Drain terminal and NMOS transistor N1The drain terminals of the first and second transistors are commonly connected to an output voltage VoutCapacitor CLOne end of which is connected with an output voltage VoutThe other end is grounded; also includes a resistor R1And a resistance R2And a plurality of capacitors, the resistor R1Is connected in series with the PMOS tube P1The drain terminal of, the resistance R2Is connected in series with the NMOS tube N1The drain terminal of (1); a plurality of capacitors connected in parallel to the capacitor CLAnd an output voltage VoutIn the meantime.
The invention has the following beneficial effects:
(1) the drain end of the PMOS tube and the drain end of the NMOS tube are respectively connected with a high-precision resistor in series, and the resistance value of the high-precision resistor is greater than that of the on-resistance of the MOS tube, so that the influence of the internal resistance of the MOS tube on time delay is avoided;
(2) a load capacitor is added at the output end, so that the effect of accurately controlling the delay time is achieved; the load capacitor is selected by taking the NMOS tube as a switch to adjust the size of the total load capacitance value, so that the delay time is changed and controlled;
(3) the size of the load capacitance value of the output end can be adjusted, and a delay step length adjusting circuit is realized;
(4) the configurable precise delay circuit structure can be connected in series in multiple stages, and a circuit with longer delay is realized.
Drawings
FIG. 1 is a schematic diagram of a conventional delay circuit of a CMOS inverter;
FIG. 2 is a schematic diagram of a configurable precision delay circuit for a high-speed ADC according to the present invention;
fig. 3 is a schematic diagram of a delay chain circuit structure formed by serially connecting configurable precise delay circuit structures for a high-speed ADC.
Detailed Description
The following describes a configurable precise delay circuit structure for a high-speed ADC according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example one
The invention provides a configurable precise time delay circuit structure for a high-speed ADC (analog to digital converter), which is shown in figure 2 and comprises a PMOS (P-channel metal oxide semiconductor) tube P1NMOS transistor N1And a capacitor CLPMOS tube P1Gate terminal of and NMOS transistor N1Are commonly connected to an input voltage VinPMOS tube P1Drain terminal and NMOS transistor N1The drain terminals of the first and second transistors are commonly connected to an output voltage VoutCapacitor CLOne end of which is connected with an output voltage VoutThe other end is grounded;
with continued reference to FIG. 2, the configurable precise delay circuit structure further includes a resistor R1And a resistance R2And a plurality of capacitors C1~CnAnd n is an integer of not less than 1. The resistor R1Is connected in series with the PMOS tube P1The drain terminal of, the resistance R2Is connected in series with the NMOS tube N1The drain terminal of (1); a plurality of capacitors C1~CnIs connected in parallel with the capacitor CLAnd an output voltage VoutBetween, capacitance C1~CnRespectively connected with an NMOS tube MN serving as a switching tube in series1~MNnSpecifically, a capacitor C1Upper series NMOS transistor MN1Capacitor C2Upper series NMOS transistor MN2,.., capacitance CnUpper series NMOS transistor MNn. NMOS tube MN1~MNnRespectively with corresponding capacitors C1~CnAnd the source ends are grounded.
Considering first only the capacitor C1The case of a branch. When the input voltage isVinWhen equal to 0V, PMOS tube P1Conducting NMOS tube N1Cut-off, RC delay τ and propagation delay t at this timepRespectively as follows:
τ=(Rp+R1)·(CL+C1)
tp=ln2·τ=0.69(Rp+R1)(CL+C1)
Rpis a PMOS tube P1Internal resistance of (d); when R is1>>RpSaid resistance R1At least a PMOS tube P1Internal resistance Rp3 orders of magnitude, the above formula is approximated as: t is tp=0.69R1(CL+C1)
In the same way, RnIs an NMOS tube N1When V is an internal resistance ofin=VDDAnd R is2>>RnSaid resistance R2At least an NMOS transistor N1Internal resistance RnOf 3 orders of magnitude, there are: t is tn=0.69R2(CL+C1)
The total propagation delay t of the whole delay circuit is:
in sum, the delay circuit avoids the PMOS tube P1And NMOS tube N1The influence of the internal resistance on the time delay, and only the resistance R needs to be controlled well in design and processing1、R2And a capacitor CL、C1The delay time can be accurately controlled.
If n different capacitance branches are added, the circuit can generate time delay of a plurality of gears, and the delay time can be configured only by changing the on-off of the NMOS tube of the capacitance branch. Based on this characteristic, the circuit configuration can be used for a variety of applications, as follows.
Firstly, a plurality of delay circuits with different effects can be designed by utilizing the circuit. For example, let C1=C2=C3=…=CnIf C, then one capacitor branch is conducted every moreThe total propagation delay of the circuit is increased by a fixed value:thereby obtaining an equal-difference delay incremental circuit; or order C1、C2、C3、…、CnDifferent values are taken, different NMOS tubes are conducted according to requirements, and 1+2 can be obtained in totalnDifferent delay schemes are adopted; meanwhile, by conducting more NMOS tubes, the total range of delay time can be increased, and the design requirement is met.
Secondly, a delay step length adjusting circuit can be designed by utilizing the delay circuit. Order to Then turn on C in sequence1、C2、C3、…、CnThe delay step size can be increased bit by bit when the branch is located.
Finally, a delay chain circuit can be designed by utilizing the delay circuit. As shown in FIG. 3, a plurality of the configurable precise delay circuit structures are connected in series end to end, if the propagation delay t of the xth stage delay circuit is txComprises the following steps:then VoutSignal to VinThe total propagation delay t of the signal is: t is t1+t2+t3+…+tn. The delay chain circuit can realize a wider range of delay effect.
It is noted that the load capacitance CLThe gate mainly comprises three parts, namely an internal diffusion capacitor of the gate, an interconnection line capacitor and a fan-out capacitor, and needs to be comprehensively considered during design.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (6)
1. A configurable accurate delay circuit structure for high-speed ADC comprises a PMOS tube P1NMOS transistor N1And a capacitor CLPMOS tube P1Gate terminal of and NMOS transistor N1Are commonly connected to an input voltage VinPMOS tube P1Drain terminal and NMOS transistor N1The drain terminals of the first and second transistors are commonly connected to an output voltage VoutCapacitor CLOne end of which is connected with an output voltage VoutThe other end is grounded;
the configurable precise time delay circuit structure is characterized by further comprising:
resistance R1And a resistance R2Said resistance R1Is connected in series with the PMOS tube P1The drain terminal of, the resistance R2Is connected in series with the NMOS tube N1The drain terminal of (1);
a plurality of capacitors connected in parallel to the capacitor CLAnd an output voltage VoutIn the meantime.
2. The configurable precision delay circuit architecture for a high-speed ADC of claim 1 wherein said capacitor C is connected in parallelLAnd an output voltage VoutAnd each capacitor between the two capacitors is respectively connected with a switching tube in series.
3. The configurable precise delay circuit structure of claim 2, wherein the switch transistors are NMOS transistors, the drain terminals of the NMOS transistors are connected to the corresponding capacitors, and the source terminals of the NMOS transistors are grounded.
4. The configurable precision delay circuit structure for a high speed ADC of claim 1 wherein said resistor R1Is a PMOS tube P1Internal resistance RpAbove 3 orders of magnitude, the resistance R2Is an NMOS tube N1Internal resistance RnAbove 3 orders of magnitude.
5. Such as rightThe configurable precision delay circuit structure for a high-speed ADC of claim 1, wherein said PMOS pipe P1Source terminal of the transformer is connected with a voltage VDDThe NMOS tube N1The source terminal of which is grounded.
6. A delay chain circuit formed by connecting configurable precise delay circuit structures for a high-speed ADC according to any one of claims 1-5 in series.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108055024A (en) * | 2018-01-31 | 2018-05-18 | 电子科技大学 | A kind of compact delay circuit |
CN112994665A (en) * | 2021-04-21 | 2021-06-18 | 成都铭科思微电子技术有限责任公司 | CMOS delay circuit with temperature compensation |
CN113098471A (en) * | 2021-03-31 | 2021-07-09 | 无锡英诺赛思科技有限公司 | Ultra-high-speed insulated isolation GaN half-bridge gate driving circuit |
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- 2021-08-31 CN CN202111015397.8A patent/CN113708766A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108055024A (en) * | 2018-01-31 | 2018-05-18 | 电子科技大学 | A kind of compact delay circuit |
CN113098471A (en) * | 2021-03-31 | 2021-07-09 | 无锡英诺赛思科技有限公司 | Ultra-high-speed insulated isolation GaN half-bridge gate driving circuit |
CN112994665A (en) * | 2021-04-21 | 2021-06-18 | 成都铭科思微电子技术有限责任公司 | CMOS delay circuit with temperature compensation |
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Application publication date: 20211126 |