CN113692352A

CN113692352A - Method for producing third laminate, method for producing fourth laminate, method for producing semiconductor device with back surface protective film, and third laminate

Info

Publication number: CN113692352A
Application number: CN202080026612.1A
Authority: CN
Inventors: 上道厚史; 根本拓; 中石康喜; 古野健太
Original assignee: Lintec Corp
Current assignee: Lintec Corp
Priority date: 2019-04-26
Filing date: 2020-04-24
Publication date: 2021-11-23
Also published as: TWI839508B; TW202103969A; CN118231319A; KR20220004964A; JP6854983B1; SG11202110169VA; WO2020218519A1; JPWO2020218519A1

Abstract

The present invention relates to a method for producing a third laminate (19), wherein one surface of a workpiece (14) is a circuit surface (14a), the other surface is a back surface (14b), one surface of a film (13) for forming a back surface protective film is a smooth surface (13b), and the other surface is a rough surface (13a) rougher than the smooth surface (13b), the method comprising the steps of: a first laminating step of attaching the rough surface (13a) of the film (13) for forming a back surface protection film to the back surface (14b) of the workpiece (14); and a second laminating step of attaching the support sheet (10) to the smooth surface (13b) of the film (13) for forming a back surface protection film.

Description

Method for producing third laminate, method for producing fourth laminate, method for producing semiconductor device with back surface protective film, and third laminate

Technical Field

The present invention relates to a method for manufacturing a third laminate, a method for manufacturing a fourth laminate, a method for manufacturing a semiconductor device with a back surface protective film, and a third laminate. More particularly, the present invention relates to a method for producing a third laminate in which a workpiece such as a semiconductor wafer, a film for forming a back surface protection film, and a support sheet are laminated in this order; a method for manufacturing a fourth laminate in which a workpiece such as a semiconductor wafer, a back surface protective film, and a support sheet are sequentially laminated; and a method for manufacturing a semiconductor device with a back surface protective film using the above manufacturing methods; and a third laminate in which a work such as a semiconductor wafer, a film for forming a back surface protection film, and a support sheet are laminated in this order.

The present application claims priority based on japanese patent application No. 2019-086298 filed in japan on 26.4.2019, and the contents thereof are incorporated herein.

Background

In recent years, a mounting method called a so-called flip-chip (face down) method is applied to manufacture of a semiconductor device. In the flip chip system, a semiconductor chip having electrodes such as bumps on a circuit surface is used, and the electrodes are bonded to a substrate. Therefore, the back surface of the semiconductor chip opposite to the circuit surface may be exposed.

A resin film containing an organic material is formed as a back surface protective film on the back surface of the exposed semiconductor chip, and the semiconductor chip with the back surface protective film may be incorporated into a semiconductor device. The back surface protection film is used to prevent cracks from occurring in the semiconductor chip after a dicing process or packaging (packaging) (for example, patent documents 1 and 2).

Such a semiconductor chip with a back surface protective film can be manufactured through, for example, the process shown in fig. 9. That is, a method is known: a back surface protection film forming film 13 is laminated on the back surface 8B of the semiconductor wafer 8 having a circuit surface (fig. 9 (a)), the back surface protection film forming film 13 is thermally cured or energy ray cured to form a back surface protection film 13 '(fig. 9 (B)), laser marking is performed on the back surface protection film 13' (fig. 9 (C)), a support chip 10 is laminated on the back surface protection film 13 '(fig. 9 (D)), the semiconductor wafer 8 and the back surface protection film 13' are cut, the semiconductor chip 7 with a back surface protection film is manufactured (fig. 9 (E) and fig. 9 (F)), and the semiconductor chip 7 with a back surface protection film is picked up from the support chip 10. The order of the curing step and the laser marking step is arbitrary, and a film 13 for forming a back surface protection film may be laminated on the back surface 8b of the semiconductor wafer 8 having a circuit surface (fig. 9 (a)), the film 13 for forming a back surface protection film may be subjected to laser marking, and then the film 13 for forming a back surface protection film may be thermally cured or energy-ray cured to form a back surface protection film 13', followed by the steps of fig. 9(D) to 9 (G). Note that the device in fig. 9 (a) in which the film 13 for forming a back surface protection film is laminated on the back surface 8b of the semiconductor wafer 8 and the device in fig. 9(D) in which the support sheet 10 is laminated on the back surface protection film 13' may be performed by using different devices. These methods can be used not only for manufacturing a semiconductor device as a semiconductor chip obtained by dicing a semiconductor wafer and singulating it, but also for manufacturing a semiconductor device in which at least one electronic component is sealed with a sealing resin for manufacturing a semiconductor device panel composed of an aggregate of semiconductor devices in which at least one electronic component is sealed with a sealing resin by dicing in the same manner.

The composite sheet for forming a protective film, which is obtained by integrating the film 13 for forming a back surface protective film and the support sheet 10, can be used for manufacturing a semiconductor chip with a back surface protective film (for example, patent document 2).

A method for manufacturing a semiconductor chip with a back surface protective film using the composite sheet for forming a protective film includes, for example, the steps shown in fig. 10. That is, a method is known: a film 13 for forming a back surface protection film of a composite sheet 1 for forming a protection film, which is obtained by laminating a film 13 for forming a back surface protection film and a support sheet 10, is stuck to a back surface 8B of a semiconductor wafer 8 having a circuit surface (fig. 10 (a ')), a tape 17 for protecting a circuit surface is peeled off (fig. 10 (B')), the film 13 for forming a back surface protection film is formed by heat curing or energy ray curing (fig. 10 (C ')), the back surface protection film 13' is laser-marked from one side of the support sheet 10 (fig. 10 (D ')), the semiconductor wafer 8 and the back surface protection film 13' are cut to obtain a semiconductor chip 7 with a back surface protection film (fig. 10 (E ') and fig. 10 (F')), and the semiconductor chip 7 with a back surface protection film is picked up from the support sheet 10. In this case, the order of the curing step and the laser marking step is also arbitrary. These methods are applicable not only to the manufacture of semiconductor devices as semiconductor chips, but also to the manufacture of semiconductor devices in which at least one electronic component is sealed with a sealing resin for the manufacture of semiconductor device panels, which are constituted by an aggregate of semiconductor devices in which at least one electronic component is sealed with a sealing resin, by the same dicing.

Documents of the prior art

Patent document

Patent document 1: japanese patent No. 4271597

Patent document 2: japanese patent No. 5363662

Disclosure of Invention

Technical problem to be solved by the invention

In the method of manufacturing a semiconductor device in which the film 13 for forming a back surface protection film is laminated on the back surface 8b of the semiconductor wafer 8 shown in fig. 9, laser marking can be directly performed on the exposed film 13 for forming a back surface protection film or the back surface protection film 13'. However, in the method for manufacturing a semiconductor device in which the back surface protective film forming film 13 of the protective film forming composite sheet 1 is attached to the back surface 8b of the semiconductor wafer 8 shown in fig. 10, laser marking is performed by irradiating laser from the side of the support sheet 10 through the support sheet 10, and the outlines of characters and symbols printed at the interface between the back surface protective film forming film 13 and the support sheet 10 are blurred, and visibility after printing is deteriorated.

Accordingly, an object of the present invention is to provide a method for manufacturing a third laminate in which a workpiece such as a semiconductor wafer, a film for forming a back surface protection film, and a support sheet are sequentially laminated, the third laminate being capable of laser marking the back surface protection film via the support sheet and having good visibility of laser marks. Another object of the present invention is to provide a method for manufacturing a fourth laminate in which a workpiece such as a semiconductor wafer, a back surface protective film, and a support sheet are sequentially laminated, the fourth laminate being capable of laser marking the back surface protective film through the support sheet and having good visibility of laser marks. Further, the present invention aims to provide a method for manufacturing a semiconductor device with a back surface protective film using these manufacturing methods.

Means for solving the problems

The present invention provides a method for producing a third laminate, a method for producing a fourth laminate, a method for producing a semiconductor device with a back surface protective film, and a third laminate.

[1] A method for producing a third laminate comprising a work, a film for forming a back surface protection film, and a support sheet laminated in this order,

one surface of the workpiece is a circuit surface, the other surface is a back surface,

one surface of the film for forming a back surface protective film is a smooth surface, and the other surface is a rough surface rougher than the smooth surface,

the manufacturing method sequentially comprises the following steps:

a first laminating step of attaching the rough surface of the film for forming a back surface protection film to the back surface of the workpiece; and

and a second laminating step of attaching the support sheet to the smooth surface of the film for forming a back surface protection film.

[2] The method of manufacturing a third laminate according to [1], wherein a device for attaching the film for forming a back surface protection film and a device for attaching a support sheet are connected and operated at least from the first lamination step to the second lamination step, or are operated in the same device.

[3] The method of producing a third laminate according to [1] or [2], wherein the second laminate having the film for forming a back surface protection film attached to the work is conveyed one by one from the first laminating step to the second laminating step.

[4] The method of manufacturing a third laminate according to any one of the above [1] to [3], wherein a transport distance of the workpiece from a bonding start position of the first lamination step to a bonding end position of the second lamination step is 7000mm or less.

[5] The method for producing a third laminate according to any one of [1] to [4], wherein a conveyance time of the workpiece from a start of the bonding in the first lamination step to a finish of the bonding in the second lamination step is 150s or less.

[6] The method for producing a third laminate according to any one of the above [1] to [5], wherein the circuit surface of the workpiece is protected with a circuit surface protecting tape,

the method for manufacturing the third laminate includes: and a peeling step of peeling the circuit surface protective tape from the circuit surface of the work after the second laminating step.

[7] The method of manufacturing a third laminate according to [6], wherein the back surface of the workpiece is a polished surface, and the circuit surface protection tape is a back surface polishing tape.

[8] The method of manufacturing a third laminate according to any one of [1] to [7], wherein the workpiece is a semiconductor wafer.

[9] The method of manufacturing a third laminate according to any one of the above [1] to [7], wherein the workpiece is a semiconductor device panel including an aggregate of semiconductor devices in which at least one electronic component is sealed with a sealing resin.

[10] The method for producing a third laminate according to any one of the above [1] to [9], wherein the support sheet has an adhesive layer provided on a base material,

the method for manufacturing the third laminate includes: and a second laminating step of attaching the adhesive layer of the support sheet to the smooth surface of the back surface protection film forming film.

[11] The method for producing a third laminate according to [10], wherein the adhesive layer is energy-ray curable.

[12] The method for producing a third laminate according to any one of [1] to [11], comprising: and a step of irradiating the film for forming the back surface protection film with laser from the support sheet side to perform laser marking.

[13] A method for manufacturing a fourth laminate in which a work, a back surface protective film, and a support sheet are laminated in this order, comprising:

and (3) curing the film for forming a back surface protection film of the third laminate produced by the production method according to any one of [1] to [12] to produce a back surface protection film.

[14] The method for producing a fourth laminate according to [13], comprising: and a step of irradiating the back surface protection film with laser from the support sheet side to perform laser marking.

[15] A method for manufacturing a semiconductor device with a back surface protective film, comprising:

a step of cutting the work and the back surface protective film of the fourth laminate manufactured by the manufacturing method according to [13] or [14] to manufacture a semiconductor device with a back surface protective film; and

and picking up the semiconductor device with the back surface protective film from the support sheet.

[16] A method for manufacturing a semiconductor device with a back surface protective film, comprising:

a step of cutting the film for forming a back surface protection film and the work of the third laminate manufactured by the manufacturing method according to any one of [1] to [12] to produce a semiconductor device with a film for forming a back surface protection film;

a step of curing the film for forming a back surface protection film to form a back surface protection film; and

and picking up the semiconductor device with the film for forming the back surface protection film or the semiconductor device with the back surface protection film from the support sheet.

[17] The method for manufacturing a semiconductor device with a back surface protective film according to any one of [15] and [16], wherein the film for forming the back surface protective film is thermosetting, and in the step of forming the back surface protective film, the film for forming the back surface protective film is heat-treated and thermosetting.

[18] The method for manufacturing a semiconductor device with a back surface protective film according to any one of [15] and [16], wherein the film for forming the back surface protective film is energy ray-curable, and in the step of forming the back surface protective film, the film for forming the back surface protective film is irradiated with an energy ray to be cured.

[19] A third laminate comprising a work, a film for forming a back surface protective film, and a support sheet laminated in this order,

the rough surface of the film for forming a back surface protection film is bonded to the back surface of the work,

the support sheet is attached to the smooth surface of the film for forming a back surface protective film.

Effects of the invention

According to the present invention, there can be provided a method for manufacturing a third laminate in which a workpiece, a film for forming a back surface protection film, and a support sheet are laminated in this order, the third laminate being capable of laser marking the back surface protection film through the support sheet and having good visibility of laser marking. Further, the present invention can provide a method for manufacturing a fourth laminate in which a workpiece, a back surface protective film, and a support sheet are laminated in this order, the fourth laminate being capable of laser marking the back surface protective film via the support sheet and having good visibility of laser marks. Further, the present invention provides a method for manufacturing a semiconductor device with a back surface protective film using these manufacturing methods.

Drawings

Fig. 1 is a schematic sectional view schematically showing an example of an embodiment of a method for producing a third laminate.

Fig. 2 is a schematic cross-sectional view schematically showing an example of a film for forming a back surface protective film.

Fig. 3 is a schematic sectional view schematically showing another example of the embodiment of the method for producing the third laminate.

Fig. 4 is a schematic cross-sectional view schematically showing an example of the embodiment of the method for producing the fourth laminate.

Fig. 5 is a schematic cross-sectional view schematically showing another example of the embodiment of the method for producing the fourth laminate.

Fig. 6 is a schematic cross-sectional view schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film.

Fig. 7 is a schematic sectional view schematically showing another example of the method for manufacturing a semiconductor device with a back surface protective film.

Fig. 8 is a schematic sectional view schematically showing another example of the method for manufacturing a semiconductor device with a back surface protective film.

Fig. 9 is a schematic cross-sectional view schematically showing an example of a conventional method for manufacturing a semiconductor chip with a back surface protective film.

Fig. 10 is a schematic cross-sectional view schematically showing another example of a conventional method for manufacturing a semiconductor chip with a back surface protective film.

Fig. 11 is a schematic cross-sectional view showing an example of the support sheet 10 in which the adhesive layer 12 is provided on the base material 11.

Detailed Description

Hereinafter, a method for manufacturing a third laminate, a method for manufacturing a fourth laminate, and a method for manufacturing a semiconductor device, to which embodiments of the present invention are applied, will be described in detail. In the drawings used in the following description, the features may be enlarged for easy understanding and convenience of illustration, and the dimensional ratios of the respective components are not necessarily the same as those in reality.

< method for producing third laminate >

Fig. 1 is a schematic sectional view schematically showing an example of an embodiment of a method for producing a third laminate. The method of manufacturing the third laminate according to the present embodiment is a method of manufacturing a third laminate 19 in which a work 14, a film 13 for forming a back surface protection film, and a support sheet 10 are laminated in this order, wherein one surface of the work 14 is a circuit surface 14a, the other surface is a back surface 14b (fig. 1 (a)), one surface of the film 13 for forming a back surface protection film is a smooth surface 13b, and the other surface is a rough surface 13a which is rougher than the smooth surface 13b, and the method of manufacturing includes in this order (fig. 1 (a) to fig. 1 (e)): a first laminating step of attaching the rough surface 13a of the film 13 for forming a back surface protection film to the back surface 14b of the workpiece 14 (fig. 1 (b)); and a second laminating step of attaching the support sheet 10 to the smooth surface 13b of the back surface protection film forming film 13 (fig. 1 (d)).

That is, the third laminate of the present embodiment is a third laminate in which a work 14, a film 13 for forming a back surface protection film, and a support sheet 10 are laminated in this order, one surface of the work 14 is a circuit surface 14a, the other surface is a back surface 14b, one surface of the film 13 for forming a back surface protection film is a smooth surface 13b, the other surface is a rough surface 13a rougher than the smooth surface 13b, the rough surface 13a of the film 13 for forming a back surface protection film is bonded to the back surface 14b of the work 14, and the support sheet 10 is bonded to the smooth surface 13b of the film 13 for forming a back surface protection film (fig. 1 (e)).

In the present embodiment, a semiconductor wafer is used as the workpiece 14 shown in fig. 1 (a). One surface of the semiconductor wafer is a circuit surface 14a, and bumps are formed. In addition, in order to prevent the circuit surface 14a and the bumps of the semiconductor wafer from being crushed at the time of back-grinding the semiconductor wafer, or from generating dents (bumps) or cracks on the back surface of the wafer, the circuit surface 14a and the bumps of the semiconductor wafer are protected by a circuit surface protecting tape 17. The circuit surface protecting tape 17 is a back-grinding tape, and the back surface of the semiconductor wafer as the workpiece 14 (i.e., the back surface 14b of the workpiece) is a ground surface.

The workpiece 14 is not limited as long as it has a circuit surface 14a on one side and the other surface can be referred to as a back surface. Examples of the work 14 include a semiconductor wafer having a circuit surface on one side, a semiconductor device panel composed of a semiconductor device assembly with terminals, which is singulated and each electronic component is sealed with a sealing resin and has a terminal forming surface (in other words, a circuit surface) of a semiconductor device with terminals on one side, and the like.

As the circuit surface protecting tape 17, for example, a surface protecting sheet disclosed in japanese patent application laid-open nos. 2016, 192488 and 2009, 141265 can be used. The circuit surface protection tape 17 includes an adhesive layer having an appropriate removability. The adhesive layer may be formed of a general-purpose weak adhesion type adhesive such as rubbers, acrylics, silicones, urethanes, vinyl ethers, and the like. The adhesive layer may be an energy ray-curable adhesive which is cured by irradiation with an energy ray and becomes removable. The circuit surface protecting tape 17 is in the shape of a double-sided tape, and a hard support may be fixed to the outside of the circuit surface protecting tape 17, or the work 14 may be fixed to the hard support.

In the present specification, "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of the energy ray include ultraviolet rays, radiation, and electron beams. For example, the ultraviolet rays can be irradiated by using a high-pressure mercury lamp, a fusion lamp (fusion lamp), a xenon lamp, a black light lamp, an LED lamp, or the like as an ultraviolet ray source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.

In the present specification, "energy ray-curable property" refers to a property of curing by irradiation with an energy ray, and "non-energy ray-curable property" refers to a property of not curing even by irradiation with an energy ray.

In the first lamination step of the present embodiment shown in fig. 1 (b), the film 13 for forming a back surface protection film can be used as the first laminate 5 shown in fig. 2. The first laminate 5 shown in fig. 2 includes a first release film 151 on one surface (i.e., the rough surface 13a) of the film 13 for forming a back surface protection film, and a second release film 152 on the other surface (i.e., the smooth surface 13b) opposite to the rough surface 13 a. After the first release film 151 on the rough surface 13a side is peeled off, the rough surface 13a of the film 13 for forming a back surface protection film is laminated toward the back surface 14b of the work 14 in the first lamination step (fig. 1 (b)). The film 13 for forming a back surface protection film may be a film previously processed in accordance with the shape of the work 14, or may be processed and used in the apparatus immediately before lamination. Next, the second release film 152 on the smooth surface 13b side is preferably peeled off to produce the second laminate 6 (fig. 1 (c)).

The film for forming a back surface protection film shown in fig. 2 is formed by applying a protection film forming composition containing a solvent to the release surface of the second release film 152 having a thickness of 38 μm by a blade coater, and drying the film at 120 ℃ for 2 minutes in an oven. Subsequently, the release surface of the first release film 151 having a thickness of 38 μm was superimposed on the film for forming a back surface protection film, and the two were bonded to each other, whereby a film for forming a back surface protection film comprising the first release film 151, a film for forming a back surface protection film (film 13 for forming a back surface protection film in fig. 2) (thickness: 25 μm), and a second release film 152 was obtained. Such a film for forming a back surface protection film is suitable for storage in a roll form, for example. Further, by forming the release surface of the first release film 151 into, for example, a rough surface having a surface roughness Ra of 200nm, and forming the release surface of the second release film 152 into, for example, a smooth surface having a surface roughness Ra of 30nm, which is smoother than the surface roughness of the rough surface, it is possible to form one surface of the film 13 for forming a back surface protection film into a smooth surface 13b, and to form the other surface of the film 13 for forming a back surface protection film, which is opposite to the one surface, into a rough surface 13a rougher than the smooth surface 13 b. After the first release film 151 on the rough surface 13a side is peeled off, the rough surface 13a of the film 13 for forming a back surface protection film is stuck to the back surface 14b of the workpiece 14 in the first laminating step.

Alternatively, even if the surface roughness Ra of the release surface of the first release film 151 is the same as the surface roughness Ra of the release surface of the second release film 152 and is a smooth surface, for example, one surface of the film 13 for forming a back surface protection film can be made into a smooth surface 13b, and the other surface of the film 13 for forming a back surface protection film opposite to the one surface can be made into a rough surface 13a rougher than the smooth surface 13 b.

That is, the protective film-forming composition containing a solvent was applied to the release surface of the second release film 152 having a surface roughness Ra of 30nm by a blade coater, and then dried in an oven at 120 ℃ for 2 minutes, thereby forming a film for forming a back surface protective film. Then, a release surface having a surface roughness Ra of 30nm of the first release film 151 having a thickness of 38 μm was superimposed on the film for forming a back surface protection film, and the film for forming a back surface protection film comprising the first release film 151, the film for forming a back surface protection film (film 13 for forming a back surface protection film in FIG. 2) (thickness: 25 μm), and the second release film 152 was laminated under a condition of, for example, 23 ℃ and 0.4 MPa. As a result, a light release surface is formed between the rough surface 13a of the back surface protection film forming film 13 and the first release film 151, and a heavy release surface having a peel strength greater than that of the light release surface is formed between the smooth surface 13b of the back surface protection film forming film 13 and the second release film 152. Such a film for forming a back surface protection film is also suitable for storage in a roll form, for example.

The surface roughness of the film for forming the back surface protection film on the side of the first release film 151 can be adjusted by the temperature and pressure conditions when the release surface of the first release film 151 is bonded to the film for forming the back surface protection film. When the temperature and pressure conditions for bonding the release surface of the first release film 151 to the film for forming the back surface protection film are increased, the surface roughness of the film for forming the back surface protection film on the side of the first release film 151 matches the surface roughness of the release surface of the first release film 151.

The surface roughness Ra of the rough surface of the film for forming a back surface protection film facing the back surface side of the workpiece may be 32 to 1200nm, preferably 32 to 1000nm, more preferably 32 to 900nm, and particularly preferably 32 to 800 nm.

The larger the surface roughness Ra of the rough surface of the film for forming a back surface protection film, the smaller the area actually in contact with the release film. Therefore, when the surface roughness Ra of the rough surface of the back surface protection film forming film is equal to or greater than the lower limit value, the film is likely to be peeled off preferentially when the rough surface side of the back surface protection film forming film is peeled off.

Thus, when the peeling film having a low peeling force is peeled, the risk that the film for forming the back surface protection film cannot be peeled from the peeling film having a low peeling force properly, and that a peeling failure (so-called blocking (ナキワカレ)) occurs in which a part of the film for forming the back surface protection film remains on the peeling film having a low peeling force due to cohesive failure (cohesive failure) of the film for forming the back surface protection film can be reduced.

The surface roughness Ra of the smooth surface of the film for forming a back surface protection film facing the support sheet is preferably 20 to 80nm, more preferably 24 to 50nm, and still more preferably 28 to 32 nm.

The ratio of the surface roughness Ra of the rough surface of the film for forming the back surface protection film to the surface roughness Ra of the smooth surface of the film for forming the back surface protection film (surface roughness Ra of the rough surface/surface roughness Ra of the smooth surface) may be 1.1 to 50, 1.2 to 45, 1.3 to 35, 1.4 to 30, or 1.5 to 24.

In the second laminating step shown in fig. 1 (d), the support sheet 10 is laminated on the smooth surface 13b of the film 13 for forming a back surface protection film, which is laminated on the back surface 14b of the work 14. The support sheet 10 is, for example, a circular polyethylene terephthalate film having a thickness of 80 μm and a diameter of 270mm, and is provided with a clip adhesive layer 16 on the outer periphery. In the present embodiment, the work 14 is fixed to the fixing jig 18 together with the film 13 for forming a back surface protection film. The support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13, and is fixed to a fixing jig 18 via a jig adhesive layer 16 ((e) of fig. 1).

Conventionally, the apparatus in fig. 9 (a) in which the film 13 for forming a back surface protection film is laminated on the back surface 8b of the semiconductor wafer 8 and the apparatus in fig. 9(D) in which the support sheet 10 is laminated on the back surface protection film 13' are performed by using different apparatuses, and the respective laminated bodies are transported to the subsequent apparatuses so that a plurality of laminated bodies are housed in one case.

However, in the present embodiment, at least from the first laminating step shown in fig. 1 (b) to the second laminating step shown in fig. 1 (d), the device to which the back surface protective film forming film is attached and the device to which the support sheet is attached can be connected and operated, or can be operated in the same device. Therefore, the second laminate having the back surface protection film forming film 13 attached to the work 14 can be transported one by one to the second lamination step shown in fig. 1 (d) from the first lamination step to the second lamination step, and the second laminate does not need to be stored in a case. By operating in the same device, the space occupied by the device can be further reduced. By operating within the connected device, there is no need for a slave design, which can reduce initial costs by retrofitting existing devices. Further, since it is not necessary to transport the second laminate outside the apparatus while housing the second laminate in the case, the production efficiency can be improved and contamination and breakage of the second laminate can be suppressed.

In the present embodiment, after the first laminating step, the step of peeling the second release film 152 on the smooth surface 13b side from the back surface protection film forming film 13 may be performed by connecting a device for attaching the back surface protection film forming film, a device for peeling the second release film, and a device for attaching the support sheet, or the steps may be performed in the same device.

The film 13 for forming a back surface protection film used in the first lamination step may be processed in advance in the shape of a workpiece, or may be processed in the same apparatus immediately before the first lamination step. The former, which can be processed in advance, has a high production efficiency when the size of a workpiece is constant on a production line used, and the latter does not waste a film for forming a back surface protective film when the size of a workpiece may be changed, which is advantageous in terms of cost.

Before the first lamination step, a step of peeling the first release film 151 on the rough surface 13a side from the film 13 for forming the back surface protection film of the first laminate 5 may be performed by connecting a device for peeling the first release film and a device for sticking the film for forming the back surface protection film, or the above-described steps may be performed in the same device.

In this embodiment, the transport distance of the work 14 from the attachment start position of the first stacking step to the attachment end position of the second stacking step (or from the attachment start position of the first stacking step to the curing end position of the curing step) can be designed to be 7000mm or less, and the space occupied by the apparatus can be reduced. The transport distance of the workpiece 14 from the bonding start position of the first laminating step to the bonding end position of the second laminating step (or from the bonding start position of the first laminating step to the curing end position of the curing step) may be 6500mm or less, 6000mm or less, 4500mm or less, and 3000mm or less.

In the present embodiment, the conveyance time of the workpiece 14 from the start of the bonding in the first lamination step to the end of the bonding in the second lamination step can be set to 150 seconds or less, and the process time can be shortened. The conveyance time of the workpiece 14 from the start of the first stacking step to the end of the second stacking step can be 130 seconds or less, 110 seconds or less, 90 seconds or less, and 70 seconds or less.

In the present embodiment, the conveyance time of the workpiece 14 from the start of the application in the first stacking step to the end of the curing in the curing step can be set to 400 seconds or less, and the process time can be shortened. The conveyance time of the workpiece 14 from the start of the application in the first stacking step to the end of the curing in the curing step may be 300 seconds or less, 250 seconds or less, 200 seconds or less, and 150 seconds or less.

The speed at which the rough surface 13a of the back surface protection film forming film 13 is attached to the back surface 14b of the workpiece 14 in the first lamination step of the method for producing a third laminate, and the speed at which the support sheet 10 is attached to the smooth surface 13b of the back surface protection film forming film 13 in the second lamination step of the method for producing a third laminate can be set to 100mm/s or less, 80mm/s or less, 60mm/s or less, and 40mm/s or less. By setting the bonding speed in the first lamination step and the bonding speed in the second lamination step to be equal to or less than the upper limit value, the adhesion between the work 14 and the film 13 for forming a back surface protection film and the adhesion between the film 13 for forming a back surface protection film and the support sheet 10 can be improved.

The bonding speed in the first laminating step and the bonding speed in the second laminating step may be 2mm/s or more, may be 5mm/s or more, and may be 10mm/s or more. By setting the bonding speed in the first lamination step and the bonding speed in the second lamination step to be equal to or higher than the lower limit value, it is possible to increase the production efficiency of the second laminate 6 and the third laminate 19, and to set the conveyance time of the workpiece 14 from the start of bonding in the first lamination step to the end of bonding in the second lamination step to 150s or less, and to set the conveyance time of the workpiece 14 from the start of bonding in the first lamination step to the end of curing in the curing step to 400s or less.

The transport distance of the workpiece from the bonding start position of the first laminating step of the present embodiment shown in fig. 1 (b) to the bonding end position of the second laminating step shown in fig. 1 (d) can be 7000mm or less, 6500mm or less, 6000mm or less, 4500mm or less, and 3000mm or less. The conveyance time of the workpiece from the start of the bonding in the first laminating step of the present embodiment shown in fig. 1 (b) to the end of the bonding in the second laminating step shown in fig. 1 (d) can be set to 150 seconds or less, 130 seconds or less, and 110 seconds or less.

Further, the transport distance of the workpiece from the bonding start position of the first laminating step of the present embodiment shown in fig. 1 (b) to the curing end position of the curing step shown in fig. 4 (g) can be 7000mm or less, 6500mm or less, 6000mm or less, 4500mm or less, and 3000mm or less.

The conveyance time of the workpiece 14 from the bonding start position in the first laminating step of the present embodiment shown in fig. 1 (b) to the curing end position in the curing step shown in fig. 4 (g) can be set to 400 seconds or less, 300 seconds or less, 250 seconds or less, 200 seconds or less, and 150 seconds or less.

(protective film-forming composition)

The composition of the protective film-forming composition for forming the film for forming the back protective film preferably contains a binder polymer (binder polymer) component and a curable component.

(Binder Polymer component)

The binder polymer component is used in order to impart sufficient adhesiveness and film formability (sheet formability) to the film for forming a back protective film. As the binder polymer component, conventionally known acrylic polymers, polyester resins, urethane resins (urethane resins), acrylic urethane resins, silicone resins, rubber polymers, and the like can be used.

The weight average molecular weight (Mw) of the binder polymer component is preferably 1 to 200 ten thousand, and more preferably 10 to 120 ten thousand. If the weight average molecular weight of the binder polymer component is too low, the adhesive force between the back surface protection film forming film and the support sheet is increased, and transfer failure of the back surface protection film forming film may occur; if the amount is too high, the adhesiveness of the film for forming the back surface protection film is lowered, and the film may not be transferred to a chip or the like, or the back surface protection film may be peeled off from the chip or the like after the transfer.

As the binder polymer component, an acrylic polymer is preferably used. The glass transition temperature (Tg) of the acrylic polymer is preferably-60 to 50 ℃, more preferably-50 to 40 ℃, and particularly preferably-40 to 30 ℃. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the film for forming the back surface protection film and the support sheet increases, and transfer failure of the film for forming the back surface protection film may occur; if the amount is too high, the adhesiveness of the film for forming the back surface protection film is lowered, and the film may not be transferred to a chip or the like, or the back surface protection film may be peeled off from the chip or the like after the transfer.

Examples of the monomer constituting the acrylic polymer include a (meth) acrylate monomer and a derivative thereof. Examples of the alkyl (meth) acrylate include alkyl (meth) acrylates having an alkyl group of 1 to 18 carbon atoms, and specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate. Examples of the (meth) acrylate having a cyclic skeleton include cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, and imide (meth) acrylate. Further examples of the monomer having a functional group include hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and the like having a hydroxyl group; in addition, glycidyl (meth) acrylate having an epoxy group and the like are also exemplified. The acrylic polymer is preferably an acrylic polymer containing a monomer having a hydroxyl group because it has good compatibility with a curable component described later. The acrylic polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, or the like.

Further, as the binder polymer component, a thermoplastic resin for retaining the flexibility of the cured protective film may be blended. The thermoplastic resin is preferably a thermoplastic resin having a weight average molecular weight of 1000 to 10 ten thousand, and more preferably a thermoplastic resin having a weight average molecular weight of 3000 to 8 ten thousand. The glass transition temperature of the thermoplastic resin is preferably-30 to 120 ℃, and more preferably-20 to 120 ℃. Examples of the thermoplastic resin include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, and polystyrene. These thermoplastic resins may be used singly or in combination of two or more. By containing the thermoplastic resin, the film for forming the back surface protection film can follow the transfer surface of the film for forming the back surface protection film and generation of voids and the like can be suppressed.

(curing component)

The curable component may be a thermosetting component and/or an energy ray curable component.

As the thermosetting component, a thermosetting resin and a thermosetting agent can be used. As the thermosetting resin, for example, an epoxy resin is preferable.

As the epoxy resin, a conventionally known epoxy resin can be used. Specific examples of the epoxy resin include polyfunctional epoxy resins or biphenyl compounds, bisphenol a diglycidyl ether or hydrogenated products thereof, o-cresol novolac type epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, bisphenol a type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins, and the like having a bifunctional or higher functionality in the molecule. These epoxy resins can be used singly or in combination of two or more.

The film for forming a back surface protection film preferably contains 1 to 1000 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass of a thermosetting resin per 100 parts by mass of the binder polymer component. If the content of the thermosetting resin is less than 1 part by mass, sufficient adhesiveness cannot be obtained, and if it exceeds 1000 parts by mass, the peel force between the film for forming the back surface protection film and the adhesive sheet or the base film increases, and transfer failure of the film for forming the back surface protection film may occur.

The thermosetting agent functions as a curing agent for thermosetting resins, particularly epoxy resins. A preferable example of the thermosetting agent is a compound having two or more functional groups reactive with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an acid anhydride. Among them, preferred are a phenolic hydroxyl group, an amino group, an acid anhydride, and the like, and more preferred are a phenolic hydroxyl group and an amino group.

Specific examples of the phenol curing agent include polyfunctional phenol resins, biphenol, novolak-type phenol resins, dicyclopentadiene-type phenol resins, novalac-type phenol resins, and aralkyl-type phenol resins. As a specific example of the amine-based curing agent, DICY (dicyandiamide) is cited. These curing agents may be used singly or in combination of two or more.

The content of the thermosetting agent is preferably 0.1 to 500 parts by mass, and more preferably 1 to 200 parts by mass, based on 100 parts by mass of the thermosetting resin. When the content of the thermosetting agent is small, the curing may be insufficient and the adhesiveness may not be obtained; if the amount is too large, the moisture absorption rate of the film for forming the back surface protection film increases, and the reliability of the semiconductor device decreases.

As the energy ray-curable component, a low-molecular compound (energy ray-polymerizable compound) which contains an energy ray-polymerizable group and is polymerized and cured when irradiated with an energy ray such as ultraviolet ray or electron beam can be used. Specific examples of the energy ray-curable component include acrylate compounds such as trimethylolpropane triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1, 4-butanediol diacrylate, 1, 6-hexanediol diacrylate, polyethylene glycol diacrylate, polybutylmethacrylate, urethane acrylate oligomers, epoxy-modified acrylates, polyether acrylates, and itaconic acid oligomers. Such a compound has at least one polymerizable double bond in the molecule, and usually has a weight average molecular weight of 100 to 30000, preferably about 300 to 10000. The amount of the energy ray-polymerizable compound is preferably 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass, based on 100 parts by mass of the binder polymer component.

In addition, as the energy ray-curable component, an energy ray-curable polymer in which an energy ray-polymerizable group is bonded to a main chain or a side chain of the binder polymer component may be used. Such an energy ray-curable polymer has both a function as a binder polymer component and a function as a curable component.

The main skeleton of the energy ray-curable polymer is not particularly limited, and may be an acrylic polymer commonly used as a binder polymer component, or may be a polyester, polyether or the like, but from the viewpoint of easy control of synthesis and physical properties, an acrylic polymer is particularly preferably used as the main skeleton.

The energy ray-polymerizable group bonded to the main chain or side chain of the energy ray-curable polymer is, for example, a group containing an energy ray-polymerizable carbon-carbon double bond, and specifically, a (meth) acryloyl group or the like can be exemplified. The energy ray-polymerizable group may be bonded to the energy ray-curable polymer via an alkylene group, an alkyleneoxy group, or a polyalkyleneoxy group.

The weight average molecular weight (Mw) of the energy ray-curable polymer to which the energy ray-polymerizable group is bonded is preferably 1 to 200 ten thousand, more preferably 10 to 150 ten thousand. The glass transition temperature (Tg) of the energy ray-curable polymer is preferably-60 to 50 ℃, more preferably-50 to 40 ℃, and particularly preferably-40 to 30 ℃.

The energy ray-curable polymer can be obtained, for example, by reacting an acrylic polymer containing a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group with a polymerizable group-containing compound having 1 to 5 substituents reactive with the functional group and an energy ray-polymerizable carbon-carbon double bond per molecule. Examples of the substituent reactive with the functional group include an isocyanate group, a glycidyl group, and a carboxyl group.

Examples of the polymerizable group-containing compound include (meth) acryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, (meth) acryloyl isocyanate, allyl isocyanate, glycidyl (meth) acrylate; (meth) acrylic acid, and the like.

The acrylic polymer is preferably a copolymer composed of a (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group, or a derivative thereof, and another (meth) acrylate monomer copolymerizable therewith, or a derivative thereof.

Examples of the (meth) acrylic monomer having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, or a derivative thereof include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate; acrylic acid, methacrylic acid, itaconic acid having a carboxyl group; glycidyl methacrylate, glycidyl acrylate, etc. having an epoxy group.

Examples of the other (meth) acrylate monomer or its derivative copolymerizable with the above-mentioned monomer include: alkyl (meth) acrylates having an alkyl group with 1 to 18 carbon atoms, and specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and the like; specific examples of the (meth) acrylate having a cyclic skeleton include cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, and imide acrylate. In addition, vinyl acetate, acrylonitrile, styrene, and the like may be copolymerized in the acrylic polymer.

Even when an energy ray-curable polymer is used, the energy ray-polymerizable compound described above may be used together, and a binder polymer component may be used together. The relationship between the blend amounts of the three films for forming a back surface protection film of the present invention is: the energy ray-polymerizable compound is preferably contained in an amount of 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass, based on 100 parts by mass of the sum of the energy ray-curable polymer and the binder polymer component.

By imparting energy ray curability to the film for forming a back surface protection film, the film for forming a back surface protection film can be cured in a simple and short time, and the production efficiency of chips with a protection film can be improved. Conventionally, a protective film for a chip is generally formed of a thermosetting resin such as an epoxy resin, but the curing temperature of the thermosetting resin is higher than 200 ℃ or a curing time of about 2 hours is required, which hinders improvement of production efficiency. However, since the energy ray-curable film for forming a back surface protection film can be cured in a short time by irradiation with an energy ray, the protection film can be formed easily, which may contribute to improvement in production efficiency.

The film for forming a back surface protection film may contain the following components in addition to the above binder polymer component and curable component.

(coloring agent)

The film for forming a back surface protection film preferably contains a colorant. By blending a colorant in the film for forming a back surface protection film, when the semiconductor device is incorporated into a device, infrared rays and the like generated from surrounding devices can be shielded, and a malfunction of the semiconductor device caused by the shielding can be prevented. That is, in a semiconductor device or a semiconductor chip having a protective film formed thereon, a product number or the like is usually printed on the surface of the protective film by a laser marking method (a method of printing by laser cutting the surface of the protective film), and by including a colorant in the protective film, a difference in contrast between a portion where the protective film is cut by laser and a portion where the protective film is not cut can be sufficiently obtained, thereby improving visibility. As the colorant, organic or inorganic pigments and dyes can be used. Among them, black pigments are preferable from the viewpoint of electromagnetic wave or infrared shielding properties. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, and the like can be used, but the black pigment is not limited thereto. Carbon black is particularly preferable from the viewpoint of improving the reliability of the semiconductor device. The colorant may be used alone or in combination of two or more. When a colorant that reduces the visible light transmittance and/or the infrared and ultraviolet light transmittance is used to reduce the ultraviolet light transmittance, the film for forming a back surface protection film of the present invention exhibits particularly excellent high curability. The colorant that reduces the transmittance of both visible light and/or infrared and ultraviolet rays is not particularly limited as long as it is a colorant that absorbs or reflects in the wavelength region of both visible light and/or infrared and ultraviolet rays, in addition to the above-described black pigment.

The amount of the colorant is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 15 parts by mass, based on 100 parts by mass of the total solid content constituting the film for forming the back surface protective film.

(curing accelerators)

The curing accelerator is used to adjust the curing speed of the film for forming the back protective film. In particular, when an epoxy resin and a heat curing agent are used together as the curable component, a curing accelerator is preferably used.

Preferred examples of the curing accelerator include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4, 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine; tetraphenylboron salts such as tetraphenylphosphonium tetraphenylphosphonate and triphenylphosphine tetraphenylboronate. These curing accelerators may be used singly or in combination of two or more.

The curing accelerator is preferably contained in an amount of 0.01 to 10 parts by mass, more preferably 0.1 to 1 part by mass, based on 100 parts by mass of the curable component. By containing the curing accelerator in an amount within the above range, excellent adhesion characteristics can be obtained even when exposed to high temperature and high humidity, and high reliability can be achieved even when exposed to severe reflow conditions. If the content of the curing accelerator is small, curing is insufficient and sufficient adhesive properties cannot be obtained; if the amount of the curing accelerator is too large, the curing accelerator having high polarity moves toward the adhesive interface side in the film for forming the back surface protection film under high temperature and high humidity, and segregates, thereby lowering the reliability of the semiconductor device.

(coupling agent)

The coupling agent can be used to improve the adhesiveness of the film for forming a back surface protective film to a chip, the adhesiveness, and/or the cohesion of the protective film. Further, by using the coupling agent, the water resistance of the protective film obtained by curing the film for forming a back surface protective film can be improved without impairing the heat resistance of the protective film.

As the coupling agent, a compound having a group reactive with a functional group of the binder polymer component, the curable component, or the like is preferably used. As the coupling agent, a silane coupling agent is preferable. Examples of such coupling agents include gamma-glycidyloxypropyltrimethoxysilane, gamma-glycidyloxypropylmethyldiethoxysilane, beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma- (methacryloyloxypropyl) trimethoxysilane, gamma-aminopropyltrimethoxysilane, N-6- (aminoethyl) -gamma-aminopropylmethyldiethoxysilane, N-phenyl-gamma-aminopropyltrimethoxysilane, gamma-ureidopropyltriethoxysilane, gamma-mercaptopropyltrimethoxysilane, gamma-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfide, poly (ethylene glycol) ether, poly (ethylene glycol ether), poly (ethylene glycol) ether, poly (ethylene glycol ether), poly (ethylene glycol ether, poly (ethylene glycol) ether, poly (ethylene glycol, propylene glycol) ether, poly (ethylene glycol) ether, propylene, poly (ethylene glycol) ether), poly (ethylene glycol) ether, poly (ethylene glycol, propylene, and poly (propylene, and propylene) ether), and propylene glycol) ether), and propylene, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane and the like. These coupling agents may be used singly or in combination of two or more.

The coupling agent is usually contained in an amount of 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, and more preferably 0.3 to 5 parts by mass, based on 100 parts by mass of the total of the binder polymer component and the curable component. If the content of the coupling agent is less than 0.1 parts by mass, the above-described effects may not be obtained; if it exceeds 20 parts by mass, degassing may occur.

(inorganic Filler)

By blending an inorganic filler in the film for forming a back surface protection film, the thermal expansion coefficient of the protection film after curing can be adjusted, and the thermal expansion coefficient of the protection film after curing can be optimized for the semiconductor chip, thereby improving the reliability of the semiconductor device. In addition, the moisture absorption rate of the cured protective film can be reduced.

Preferred examples of the inorganic filler include powders of silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride, and the like, beads (beads) obtained by spheroidizing the above powders, single crystal fibers, glass fibers, and the like. Among them, silica filler and alumina filler are preferable. The inorganic filler may be used singly or in combination of two or more. The content of the inorganic filler is usually adjusted within a range of 1 to 80 parts by mass with respect to 100 parts by mass of the total solid content constituting the film for forming the back surface protective film.

(photopolymerization initiator)

When the film for forming a back surface protection film contains an energy ray-curable component as the curable component, the energy ray-curable component is cured by irradiation with an energy ray such as ultraviolet ray when the film for forming a back surface protection film is used. In this case, by adding a photopolymerization initiator to the composition, the polymerization curing time and the amount of light irradiation can be reduced.

Specific examples of such photopolymerization initiators include benzophenone, acetophenone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2, 4-diethylthioxanthone, α -hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzil (benzil), benzil, diacetyl, 1, 2-diphenylmethane, 2-hydroxy-2-methyl-1- [4- (1-methylvinyl) phenyl ] acetone, 2,4, 6-trimethylbenzoyldiphenylphosphine oxide, and β -chloroanthraquinone. The photopolymerization initiator may be used singly or in combination of two or more.

The blending ratio of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, more preferably 1 to 5 parts by mass, per 100 parts by mass of the energy ray-curable component. If the amount is less than 0.1 part by mass, photopolymerization may be insufficient and sufficient transferability may not be obtained; if the amount is more than 10 parts by mass, a residue not contributing to photopolymerization may be generated, and the curability of the film for forming a back surface protective film may be insufficient.

(crosslinking agent)

In order to adjust the initial adhesive force and cohesive force of the film for forming the back surface protective film, a crosslinking agent may be added. Examples of the crosslinking agent include organic polyisocyanate compounds and organic polyimine compounds.

Examples of the organic polyisocyanate compound include an aromatic polyisocyanate compound, an aliphatic polyisocyanate compound, an alicyclic polyisocyanate compound, a trimer of these organic polyisocyanate compounds, and an isocyanate-terminated urethane prepolymer obtained by reacting these organic polyisocyanate compounds with a polyol compound.

Examples of the organic polyisocyanate compound include 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 1, 3-xylylene diisocyanate, 1, 4-xylylene diisocyanate, diphenylmethane-4, 4 '-diisocyanate, diphenylmethane-2, 4' -diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4 '-diisocyanate, dicyclohexylmethane-2, 4' -diisocyanate, trimethylolpropane-added tolylene diisocyanate, and lysine isocyanate.

Examples of the organic polyimine compound include N, N ' -diphenylmethane-4, 4 ' -bis (1-aziridinecarboxamide), trimethylolpropane-tri- β -aziridinylpropionate, tetramethylolmethane-tri- β -aziridinylpropionate, and N, N ' -toluene-2, 4-bis (1-aziridinecarboxamide) triethylenemelamine.

The crosslinking agent is used in a proportion of usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the total amount of the binder polymer component and the energy ray-curable polymer.

(general additive)

In addition to the above, various additives may be blended in the film for forming a back surface protective film as necessary. Examples of the various additives include leveling agents (leveling agents), plasticizers, antistatic agents, antioxidants, ion trapping agents, gettering agents (gettering agents), and chain transfer agents.

(solvent)

The protective film-forming composition preferably further contains a solvent. The protective film-forming composition containing a solvent is excellent in workability.

The solvent is not particularly limited, and preferable examples thereof include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

The binder composition may contain only one kind of solvent, or two or more kinds of solvents, and when two or more kinds of solvents are contained, the combination and ratio thereof may be arbitrarily selected.

The solvent contained in the pressure-sensitive adhesive composition is preferably methyl ethyl ketone or the like, because the components contained in the pressure-sensitive adhesive composition can be mixed more uniformly.

The film for forming a back surface protection film obtained by applying and drying the protection film forming composition composed of the above-mentioned respective components has adhesiveness and curability, and is easily adhered by pressing it against a work (a semiconductor wafer, a chip, or the like) in an uncured state. The film for forming the back surface protection film may be heated during pressing. Further, the protective film can be cured to provide a protective film having high impact resistance, excellent in adhesive strength, and capable of maintaining a sufficient protective function even under severe high-temperature and high-humidity conditions. The film for forming a back surface protection film may have a single-layer structure, or may have a multilayer structure as long as it includes one or more layers containing the above-described components.

The thickness of the film for forming the back surface protection film is not particularly limited, but is preferably 3 to 300. mu.m, more preferably 5 to 250. mu.m, and particularly preferably 7 to 200. mu.m.

< support sheet >

The support sheet 10 used in one embodiment of the present invention includes a sheet composed only of the substrate 11, or an adhesive sheet having the adhesive layer 12 on the substrate 11.

The support sheet included in the third laminate according to one aspect of the present invention can function as a release sheet for preventing dust or the like from adhering to the surface of the film for forming the back surface protection film, or can function as a dicing sheet or the like for protecting the surface of the film for forming the back surface protection film in a dicing step or the like.

The thickness of the support sheet may be appropriately selected according to the application, but from the viewpoint of imparting sufficient flexibility to the composite sheet and improving the adhesion to a silicon wafer, the thickness of the support sheet is preferably 10 to 500 μm, more preferably 20 to 350 μm, and still more preferably 30 to 200 μm.

The thickness of the support sheet includes not only the thickness of the base material constituting the support sheet but also the thickness of the layer or the film when the adhesive layer is provided.

(substrate)

As the base material 11 constituting the support sheet 10, a resin film is preferable.

Examples of the resin film include polyethylene films such as Low Density Polyethylene (LDPE) films and Linear Low Density Polyethylene (LLDPE) films, ethylene-propylene copolymer films, polypropylene films, polybutylene films, polybutadiene films, polymethylpentene films, polyvinyl chloride films, vinyl chloride copolymer films, polyethylene terephthalate films, polyethylene naphthalate films, polybutylene terephthalate films, polyurethane films, ethylene-vinyl acetate copolymer films, ionomer resin films, ethylene- (meth) acrylic acid copolymer films, ethylene- (meth) acrylate copolymer films, polystyrene films, polycarbonate films, polyimide films, and fluororesin films.

The substrate used in one embodiment of the present invention may be a single-layer film composed of one kind of resin film, or may be a laminated film in which two or more kinds of resin films are laminated.

In one embodiment of the present invention, a sheet obtained by subjecting the surface of the substrate such as the resin film to surface treatment may be used as the support sheet.

These resin films may also be crosslinked films.

Further, a film obtained by coloring these resin films, a film obtained by printing, or the like may be used. Further, the resin film may be a resin film obtained by forming a thermoplastic resin into a sheet by extrusion molding, may be a stretched resin film, or may be a resin film obtained by forming a curable resin into a film and curing the curable resin into a sheet in a predetermined manner.

Among these resin films, a substrate including a polypropylene film is preferable from the viewpoint of excellent heat resistance, expansion suitability due to appropriate flexibility, and easiness in retaining pickup suitability.

The base material including the polypropylene film may have a single-layer structure composed of only the polypropylene film, or may have a multilayer structure composed of the polypropylene film and another resin film.

When the film for forming the back surface protective film is thermosetting, the resin film constituting the base material is made to have heat resistance, whereby damage of the base material due to heat can be suppressed, and occurrence of failure in the manufacturing process of the semiconductor device can be suppressed.

When a sheet composed only of a base material is used as the support sheet, the surface tension of the surface of the base material that is in contact with the surface of the film for forming the back surface protection film is preferably 20 to 50mN/m, more preferably 23 to 45mN/m, and still more preferably 25 to 40mN/m, from the viewpoint of adjusting the peeling force within a certain range.

The thickness of the base material constituting the support sheet is preferably 10 to 500. mu.m, more preferably 15 to 300. mu.m, and still more preferably 20 to 200. mu.m.

(adhesive sheet)

As an adhesive sheet used as the support sheet 10 in one embodiment of the present invention, an adhesive sheet having an adhesive layer 12 formed of an adhesive on a substrate 11 such as the resin film described above can be mentioned.

When the support sheet 10 is a support sheet provided with the adhesive layer 12, the adhesive layer 12 of the support sheet 10 is attached to the smooth surface 13b of the back surface protection film-forming film 13 in the second lamination step.

As the adhesive used as a material for forming the adhesive layer, an adhesive composition containing an adhesive resin is exemplified, and the adhesive composition may further contain a general-purpose additive such as the above-mentioned crosslinking agent or tackifier.

As the adhesive resin, when the structure of the resin is focused, for example, an acrylic resin, a urethane resin, a rubber resin, a silicone resin, a vinyl ether resin, and the like are cited, and when the function of the resin is focused, for example, an energy ray curable adhesive, a heat-expandable adhesive, an energy ray expandable adhesive, and the like are cited.

In one embodiment of the present invention, from the viewpoint of adjusting the peeling force within a certain range and from the viewpoint of improving the pickup property, an adhesive sheet having an energy ray-curable adhesive layer and the adhesive layer being formed of an adhesive composition containing an energy ray-curable resin or an adhesive sheet having a micro-adhesive layer is preferable.

The energy ray-curable resin may be a resin having a polymerizable group such as a (meth) acryloyl group or a vinyl group, and is preferably an adhesive resin having a polymerizable group.

In the first laminating step, the support sheet can also serve as a peeling sheet for the back surface protection film forming film when (a) a poor adhesion of the back surface protection film forming film to the entire surface of a work such as a semiconductor wafer does not occur, (b) the back surface protection film forming film floats, or (c) wrinkles occur in the back surface protection film forming film. In the first lamination step, even when a defective adhesion of the film for forming the back surface protection film occurs, the third laminate can be produced through the second lamination step. Then, the back surface protection film forming film is detached from the work such as the semiconductor wafer together with the support sheet, whereby the work such as the semiconductor wafer can be reworked. In this case, when the tact is taken into consideration, it is necessary to rapidly peel the support sheet from the fixing jig such as the ring frame, and the adhesive layer for the jig is preferably energy ray-curable. Further, by using a support sheet having an energy ray-curable adhesive layer provided on a base material, the support sheet can be directly fixed to a fixing jig such as a ring frame without using a jig adhesive layer, and excellent reworkability can be achieved by irradiating energy rays such as ultraviolet rays.

Further, from the viewpoint of adjusting the peeling force within a certain range, an adhesive containing an acrylic resin is preferable.

The acrylic resin is preferably an acrylic polymer having a structural unit (x1) derived from an alkyl (meth) acrylate, and more preferably an acrylic copolymer having a structural unit (x1) and a structural unit (x2) derived from a functional group-containing monomer.

The alkyl group of the alkyl (meth) acrylate has preferably 1 to 18 carbon atoms, more preferably 1 to 12 carbon atoms, and still more preferably 1 to 8 carbon atoms.

Examples of the alkyl (meth) acrylate include those similar to the alkyl (meth) acrylate described in the section of the binder polymer component.

The alkyl (meth) acrylate may be used alone or in combination of two or more.

The content of the structural unit (x1) is usually 50 to 100% by mass, preferably 50 to 99.9% by mass, more preferably 60 to 99% by mass, and still more preferably 70 to 95% by mass, based on the total structural unit (100% by mass) of the acrylic polymer.

Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, and an epoxy group-containing monomer, and specific examples of the monomers include those similar to those exemplified in the binder polymer component.

These monomers may be used alone or in combination of two or more.

The content of the structural unit (x2) is usually 0 to 40% by mass, preferably 0.1 to 40% by mass, more preferably 1 to 30% by mass, and still more preferably 5 to 20% by mass, based on the total structural units (100% by mass) of the acrylic polymer.

The acrylic resin used in one embodiment of the present invention may be an energy ray-curable acrylic resin obtained by further reacting a compound having an energy ray-polymerizable group with an acrylic copolymer having the structural units (x1) and (x 2).

The compound having an energy ray-polymerizable group may be a compound having a polymerizable group such as a (meth) acryloyl group or a vinyl group.

When an adhesive containing an acrylic resin is used, it is preferable to contain a crosslinking agent together with the acrylic resin, from the viewpoint of adjusting the peel force to a certain range.

Examples of the crosslinking agent include an isocyanate crosslinking agent, an imine crosslinking agent, an epoxy crosslinking agent, an oxazoline crosslinking agent, and a carbodiimide crosslinking agent, and the isocyanate crosslinking agent is preferable from the viewpoint of adjusting the peeling force to a certain range.

The content of the crosslinking agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, even more preferably 0.5 to 10 parts by mass, and even more preferably 1 to 8 parts by mass, based on the total mass (100 parts by mass) of the acrylic resin contained in the adhesive.

The support sheet 10 may be formed of one layer (single layer) or may be formed of a plurality of layers of two or more layers. When the support sheet is formed of a plurality of layers, the constituent materials and thicknesses of the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effect of the present invention is not impaired.

In the present specification, the phrase "a plurality of layers may be the same or different from each other" means "all the layers may be the same or all the layers may be different from each other, or only a part of the layers may be the same" and "a plurality of layers are different from each other" means "at least one of the constituent material and the thickness of each layer is different from each other" in the case of not being limited to the support sheet.

The support sheet may be transparent or opaque, and may be colored according to the purpose.

For example, when the film for forming a back surface protection film has energy ray curability, the support sheet preferably transmits energy rays.

For example, in order to optically inspect the back surface protection film formation film through the support sheet, the support sheet is preferably transparent.

In the present embodiment, the circuit surface 14a of the work 14 is protected by the circuit surface protective tape 17, and after the second laminating step, a peeling step of peeling the circuit surface protective tape 17 from the circuit surface 14a of the work 14 can be included. In the present embodiment, the circuit surface protecting tape 17 has an energy ray curable adhesive layer which is cured by irradiation with an energy ray to be removable on the side to be bonded to the circuit surface 14 a. In the peeling step, the adhesive layer of the circuit surface protection tape 17 is irradiated with an energy ray to cure the adhesive layer and thereby have removability, and the circuit surface protection tape 17 can be easily peeled from the circuit surface 14a of the work 14.

The method for producing the third laminate of the present embodiment may further include: and a step of irradiating the film 13 for forming the back surface protection film with laser light from the support sheet 10 side to perform laser marking. In the method for producing the third laminate according to the present embodiment, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13, when laser light is irradiated from the support sheet 10 side through the support sheet, laser marking can be performed more clearly on the smooth surface 13b of the back surface protection film forming film 13 than on the rough surface 13 a.

In an example of a conventional method for manufacturing a semiconductor chip with a back surface protective film shown in fig. 10, since the smooth surface 13b of the back surface protective film forming film 13 of the protective film forming composite sheet 1 is bonded to the back surface 8b of the semiconductor wafer 8 in fig. 10 (a '), laser marking is performed on the rough surface 13a of the back surface protective film forming film 13 when laser light is irradiated from the side of the support sheet 10 through the support sheet in fig. 10 (D'). Since the adhesion between the rough surface 13a of the film for forming a back surface protection film 13 and the interface of the support sheet 10 is impaired, when laser light is irradiated through the support sheet, the outlines of characters or symbols printed at the interface of the film for forming a back surface protection film 13 and the support sheet 10 become blurred after the laser light irradiation, and the visibility after printing is impaired.

On the other hand, in the method for producing the third laminate of the present embodiment, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13, the interface between the smooth surface 13b of the back surface protection film forming film 13 and the support sheet 10 can maintain good adhesion. Therefore, when laser light is irradiated from the support sheet 10 side through the support sheet thereafter, as shown in fig. 1 (b) to 1 (e) and 4 (f), laser marking is performed on the smooth surface 13b of the back surface protection film forming film 13, and bleeding of characters or symbols printed at the interface between the smooth surface 13b of the back surface protection film forming film 13 and the support sheet 10 can be prevented, so that laser marking can be performed more clearly than laser marking on the rough surface 13 a.

In the method for producing the third laminate of the present embodiment, since the support sheet 10 is laminated on the smooth surface 13b of the film 13 for forming the back surface protection film, after the film 13 for forming the back surface protection film is cured to form the back surface protection film 13 ', even if the laser is irradiated from the support sheet 10 side through the support sheet, the laser marking is performed on the smooth surface 13' b of the back surface protection film 13 ', and the laser marking can be performed more clearly than the laser marking on the rough surface 13' a.

In an example of a conventional method for manufacturing a semiconductor chip with a back surface protective film shown in fig. 9, (B) of fig. 9 is thermally cured in a state where the smooth surface 13B of the film 13 for forming a back surface protective film is exposed. On the other hand, in the method for producing the third laminate according to the present embodiment, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13, the smooth surface 13b is in a state of being in contact with and protected from the support sheet 10 when the back surface protection film forming film 13 is cured. Therefore, even when laser light is irradiated from the support sheet 10 side through the support sheet thereafter, laser marking is performed on the smooth surface 13 'b of the back surface protection film 13' in a state of being protected by the support sheet 10 in the curing step, and laser marking can be performed more clearly than laser marking on the smooth surface 13 'b of the back surface protection film 13' thermally cured in an exposed state.

Fig. 3 is a schematic sectional view schematically showing another example of the embodiment of the method for producing the third laminate. In the drawings subsequent to fig. 3, the same reference numerals as those in the already-described drawings are given to the same components as those shown in the already-described drawings, and detailed description thereof will be omitted.

In the present embodiment, the workpiece 14 is a semiconductor device panel composed of an aggregate in which semiconductor devices obtained by sealing at least one electronic component 62 with a sealing resin layer 64 are arranged in a planar manner. The method of manufacturing the third laminate according to this embodiment is a method of manufacturing a third laminate 19 in which a semiconductor device panel as a workpiece 14, a film 13 for forming a back surface protection film, and a support sheet 10 are laminated in this order, wherein one surface of the semiconductor device panel as the workpiece 14 is a circuit surface, the other surface is a back surface 14b (fig. 3 (a ')), one surface of the film 13 for forming a back surface protection film is a smooth surface 13b, and the other surface is a rough surface 13a rougher than the smooth surface 13b, and the method of manufacturing the third laminate sequentially includes (fig. 3 (a ') -fig. 3 (d ')): a first laminating step of attaching the rough surface 13a of the film 13 for forming a back surface protection film to the back surface 14b of the workpiece 14 ((b') of fig. 3); and a second laminating step of attaching the support sheet 10 to the smooth surface 13b of the back surface protective film forming film 13 (fig. 3 (c')).

In this embodiment, the semiconductor device panel may be a semiconductor device panel in which semiconductor devices are arranged in a plane in a substantially circular region, or may be a semiconductor device panel in which semiconductor devices are arranged in a plane in a substantially rectangular region.

In the present embodiment shown in fig. 3, as in the embodiment shown in fig. 1, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13, when laser light is irradiated from the support sheet 10 side through the support sheet, laser marking can be performed more clearly than laser marking on the rough surface 13a or rough surface 13 ' a in order to perform laser marking on the smooth surface 13b of the back surface protection film forming film 13 or the smooth surface 13 ' b of the back surface protection film 13 '. Since the smooth surface 13 'b of the back surface protection film 13' in a state of being protected by the support sheet 10 in the curing step is laser-marked thereafter, even if laser light is irradiated from the support sheet 10 side through the support sheet, laser marking can be performed more clearly than laser marking of the smooth surface 13 'b of the back surface protection film 13' thermally cured in an exposed state.

< method for producing fourth laminate >

The method for manufacturing the fourth laminate according to the present embodiment is a method for manufacturing a fourth laminate 19 ' in which a work 14, a back surface protection film 13 ', and a support sheet 10 are laminated in this order, and includes a curing step for curing the film 13 for forming a back surface protection film of the third laminate 19 manufactured by the method for manufacturing the third laminate to form the back surface protection film 13 '.

Fig. 4 is a schematic cross-sectional view schematically showing an example of the embodiment of the method for producing the fourth laminate. The method for producing the fourth laminate of the present embodiment includes: a peeling step (fig. 4 (e)) of peeling the circuit surface protective tape 17 from the circuit surface 14a of the work 14 after the second laminating step; a step of irradiating the film 13 for forming the back surface protection film with laser light from the support sheet 10 side to perform laser marking (fig. 4 (f)); and a curing step (fig. 4 (g)) of curing the film 13 for forming a back surface protection film to form a back surface protection film 13'. In the present embodiment, a thermosetting film for forming a backside protection film is used, and in the curing step of the present embodiment, thermosetting is performed under conditions of 130 ℃ and 2 hours.

The curing conditions for forming the back surface protective film by heat-treating and heat-curing the thermosetting film for forming the back surface protective film are not particularly limited as long as the back surface protective film has a degree of curing sufficient to exert its function, and may be appropriately selected depending on the kind of the thermosetting film for forming the back surface protective film.

For example, the heating temperature during thermal curing is preferably 100 to 200 ℃, more preferably 110 to 180 ℃, and particularly preferably 120 to 170 ℃. The heating time during the heat curing is preferably 0.5 to 5 hours, more preferably 0.5 to 3 hours, and particularly preferably 1 to 2 hours. In the curing step, when heat curing is performed, the order of the peeling step is preferably before the curing step in consideration of the heat resistance of the circuit surface protective tape 17.

In the present embodiment shown in fig. 4, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13 as described above, when laser light is irradiated from the support sheet 10 side through the support sheet, laser marking is performed on the smooth surface 13b of the back surface protection film forming film 13, and laser marking can be performed more clearly than laser marking on the rough surface 13 a.

Fig. 5 is a schematic cross-sectional view schematically showing another example of the embodiment of the method for producing the fourth laminate. The method for producing the fourth laminate of the present embodiment includes: a peeling step (fig. 5 (e)) of peeling the circuit surface protective tape 17 from the circuit surface 14a of the work 14 after the second laminating step; a curing step of curing the back surface protective film-forming film 13 to form a back surface protective film 13 '(fig. 5 (f')); and a step of irradiating the back surface protection film 13 'with laser light from the support sheet 10 side to perform laser marking ((g') of fig. 5).

In the present embodiment shown in fig. 5, since the support sheet 10 is laminated on the smooth surface 13b of the back surface protection film forming film 13 as described above, when laser light is irradiated from the support sheet 10 side through the support sheet, laser marking is performed on the smooth surface 13 ' b of the back surface protection film 13 ', and laser marking can be performed more clearly than laser marking on the rough surface 13 ' a. Further, since the smooth surface 13 'b of the back surface protection film 13' in a state of being protected by the support sheet 10 in the curing step is laser-marked, when laser is irradiated from the support sheet 10 side through the support sheet, laser marking can be performed more clearly than laser marking of the smooth surface 13 'b of the back surface protection film 13' thermally cured in an exposed state.

< method for manufacturing semiconductor device with backside protection film >)

Fig. 6 is a schematic cross-sectional view schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film according to the present embodiment includes: a step of dicing the workpiece 14 and the back surface protection film 13 'of the fourth laminate 19' produced by the method for producing a semiconductor device 21 with a back surface protection film (fig. 6 (h) and 6 (i)); and a step of picking up the semiconductor device with the back surface protective film 21 from the support sheet 10 ((j) of fig. 6).

Fig. 7 is a schematic sectional view schematically showing another example of the method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film according to the present embodiment includes: a step of cutting the film 13 for forming a back surface protection film of the third laminate 19 and the workpiece 14 manufactured by the method for manufacturing a third laminate to obtain a semiconductor device 21 ' with a film for forming a back surface protection film ((h ') of fig. 7 and (i ') of fig. 7); a step of picking up the semiconductor device 21 'with the film for forming the back surface protection film from the support sheet 10 ((j') of fig. 7); and a curing step of curing the film 13 for forming a back surface protection film to form a back surface protection film 13 '(k') in fig. 7).

Fig. 8 is a schematic sectional view schematically showing another example of the method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film according to the present embodiment includes: a step of cutting the film 13 for forming a back surface protection film of the third laminate 19 and the workpiece 14 manufactured by the method for manufacturing a third laminate to obtain a semiconductor device 21 ' with a film for forming a back surface protection film ((h ') of fig. 8 and (i ') of fig. 8); a curing step of curing the back surface protective film forming film 13 to form a back surface protective film 13 '(fig. 8 (j')); and picking up the semiconductor device 21 with the back surface protective film from the support sheet 10.

The film 13 for forming the back surface protection film in the method for manufacturing the semiconductor device with a back surface protection film according to the present embodiment is thermosetting, and in the step of forming the back surface protection film according to the present embodiment, for example, the film 13 for forming the back surface protection film is thermally cured at 130 ℃ for 2 hours.

As described above, the curing conditions for forming the back surface protective film by thermally curing the thermosetting film for forming the back surface protective film are not particularly limited as long as the back surface protective film has a curing degree of a degree sufficient to exhibit the functions thereof, and may be appropriately selected depending on the kind of the thermosetting film for forming the back surface protective film.

The film 13 for forming the back surface protection film in the method for manufacturing the semiconductor device with a back surface protection film according to the present embodiment is energy ray-curable, and the step of forming the back surface protection film may be a step of irradiating the film 13 for forming the back surface protection film with an energy ray to cure the film.

The curing conditions for forming the protective film by curing the energy ray-curable film for forming a back surface protective film with an energy ray are not particularly limited as long as the protective film has a curing degree to the extent that the function thereof can be sufficiently exhibited, and may be appropriately selected depending on the kind of the energy ray-curable film for forming a back surface protective film.

For example, the illuminance of the energy ray when the energy ray-curable film for forming a back surface protection film is cured by an energy ray is preferably 4 to 280mW/cm². The amount of the energy ray during curing is preferably 3 to 1000mJ/cm²。

As the energy ray-curable film for forming a back surface protective film, for example, the materials disclosed in international publication No. 2017/188200 and international publication No. 2017/188218 can be used.

Examples

The present invention will be described in more detail below with reference to specific examples. However, the present invention is not limited in any way by the examples described below.

[ example 1]

The following components were mixed at the blending ratios (in terms of solid content) shown in table 1, and the mixture was diluted with methyl ethyl ketone so that the solid content concentration was 50 mass% based on the total mass of the protective film-forming composition, thereby preparing a protective film-forming composition for forming a film for forming a back protective film.

(A-1): binder polymer: (meth) acrylate copolymer (weight-average molecular weight: 80 ten thousand, glass transition temperature: -28 ℃ C.) obtained by copolymerizing 55 parts by mass of n-butyl acrylate, 10 parts by mass of methyl acrylate, 20 parts by mass of glycidyl methacrylate and 15 parts by mass of 2-hydroxyethyl acrylate

(B-1) bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER828, epoxy equivalent 184 to 194g/eq)

(B-2) bisphenol A type epoxy resin (jER 1055, epoxy equivalent 800 to 900g/eq, manufactured by Mitsubishi Chemical Corporation)

(B-3) Dicyclopentadiene-type epoxy resin (EPICLON HP-7200HH, epoxy equivalent 255-260 g/eq, manufactured by DIC Corporation)

(B-4) o-cresol novolac type epoxy resin (Nippon Kayaku Co., Ltd., EOCN-104, epoxy equivalent 220g/eq)

(C-1) thermally active latent epoxy resin curing agent: dicyandiamide (manufactured by ADEKA CORPORATION, ADEKA HARDENER EH-3636AS, active hydrogen amount 21g/eq)

(D-1) curing accelerator: 2-phenyl-4, 5-dihydroxymethylimidazole (Curezol 2PHZ, manufactured by SHIKOKU CHEMICALS CORPORATION)

(E-1) amorphous silica Filler (manufactured by TATSUMORI LTD, SV-10, average particle diameter 8 μm)

(F-1) silane coupling agent: gamma-glycidyl Ether oxypropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd., KBM403, methoxy equivalent: 12.7mmol/g, molecular weight: 236.3)

(G-1) colorant: a Pigment obtained by mixing 32 parts by mass of a phthalocyanine-based Blue Pigment (Pigment Blue 15:3), 18 parts by mass of an isoindolinone-based Yellow Pigment (Pigment Yellow 139) and 50 parts by mass of an anthraquinone-based Red Pigment (Pigment Red 177) and pigmenting the mixture so that the total amount of the three pigments/the amount of the styrene acrylic resin is 1/3 (mass ratio).

(formation of film for Forming Back surface protection film)

The composition (III-1) thus obtained was applied to a release-treated surface (surface roughness Ra: 30nm) of a release film (SP-PET 501031 manufactured by Lintec Corporation, 50 μm in thickness, corresponding to the second release film) obtained by subjecting one surface of a polyethylene terephthalate (PET) film to a release treatment by a silicone treatment, and dried at 100 ℃ for 3 minutes to form a film for forming a back surface protection film having a thickness of 25 μm.

Further, using a laminating roller, at a temperature: 23. + -. 5 ℃ and pressure: 0.4MPa, speed: a release-treated surface (surface roughness Ra: 30nm) of another release film (SP-PET 381031 manufactured by linetec Corporation, "38 μm thick, corresponding to the first release film) having one surface of a polyethylene terephthalate (PET) film subjected to a release treatment by a silicone treatment was bonded to an exposed surface (surface opposite to the side having the release film) of the back surface protection film-forming film from the first release film side under a condition of 1 m/min, thereby preparing a laminated sheet (i.e., a first laminated body) in which release films were laminated on both surfaces of the back surface protection film-forming film.

(evaluation of frequency of occurrence of peeling failure)

10 pieces of a 4-sized second release film/film for forming a back surface protective film/first release film laminate were prepared.

The first release film was peeled from the laminate from the short side of A4 size.

In the 10-ply laminate, the number of sheets having peeling defects when the first release film was peeled from the short side having a size of a4 was determined according to the following criteria, and the frequency of occurrence of peeling defects was evaluated.

0-1 piece peeling failure A: very good.

2-3 sheets of peeling failure B: is good.

4-5 sheets of peeling failure C: generally.

6-10 sheets of peeling failure. D: and (4) poor.

(measurement of surface roughness (Ra))

The surface roughness (Ra) of the surface of the measurement object was measured at 10 points in the plane at a magnification of 10 times in the PSI mode using an optical interferometric surface texture measuring apparatus (product name "WYKO WT 1100" manufactured by Veeco Metrology Group corporation), and the first digit after the decimal point of the average value was rounded to obtain an integer value.

With respect to the second release film/film for forming a back surface protection film/first release film laminate sheet, the surface roughness (Ra) of the work side of the uncured film for forming a back surface protection film was measured by peeling the first release film, and the surface roughness (Ra) of the support sheet side of the film for forming a back surface protection film was measured by peeling the second release film.

[ production of support sheet ]

An adhesive composition was applied to a release-treated surface of a release film ("SP-PET 381031" manufactured by linetec Corporation, having a thickness of 38 μm), dried at 100 ℃ for 3 minutes to form an ultraviolet-curable adhesive layer (having a thickness of 10 μm after drying), and a polypropylene film (having a thickness of 80 μm, manufactured by GUNZE LIMITED) as a base material was additionally laminated on an exposed surface (a surface on the opposite side to the side having the release film) to obtain a support sheet.

The adhesive composition was a composition containing 100 parts by mass (solid content) of an alkyl (meth) acrylate copolymer, 6.6 parts by mass (solid content) of a trifunctional xylylene diisocyanate-based crosslinking agent ("TAKENATE D110N" manufactured by Mitsui Takeda Chemicals, inc., and 3.0 parts by mass (solid content) of a photopolymerization initiator ("IRGACURE 127" manufactured by basf corporation), and the solid content concentration was adjusted to 30% by mass using a mixed solvent of methyl ethyl ketone, toluene, and ethyl acetate. The alkyl (meth) acrylate copolymer was an ultraviolet-curable acrylic copolymer having a weight average molecular weight of 700000, which was obtained by further reacting a prepolymer obtained by copolymerizing 70 parts by mass of 2-ethylhexyl acrylate (hereinafter, sometimes, simply referred to as "2 EHA"), 10 parts by mass of vinyl acetate (hereinafter, sometimes, simply referred to as "VAc"), and 20 parts by mass of 2-hydroxyethyl acrylate (hereinafter, sometimes, simply referred to as "HEA") with 21.4 parts by mass of 2-methacryloyloxyethyl isocyanate (2-isocyanoethyl methacrylate, hereinafter, sometimes, simply referred to as "MOI") (the total number of moles of isocyanate groups in the MOI was 0.8 times the total number of moles of hydroxyl groups in the HEA).

(work)

As the workpiece, a 12-inch silicon wafer (thickness 100 μm) having a #2000 polished surface was used.

(production of third laminate)

In the production of the third laminate, the means for peeling the first peeling film, the means for attaching the film for forming the back surface protection film, the means for peeling the second peeling film, and the means for attaching the support sheet are connected to one another in the same apparatus, and the second laminate having the film for forming the back surface protection film attached to the silicon wafer as the workpiece is transported one by one between the means by using a transport arm.

First, with respect to a laminated sheet (i.e., a first laminated body) composed of a second release film/a film for forming a back surface protection film/a first release film, the film for forming a back surface protection film and the first release film are punched and processed into the shape of a silicon wafer as a workpiece, and the first release film is peeled off, and the laminated sheet is subjected to a temperature: 23 ℃ and pressure: a second release film/film for forming a back surface protection film was attached to the #2000 polished surface of the silicon wafer under a pressure of 0.5 MPa.

Next, the second release film was peeled from the laminate composed of the second release film/film for forming a back surface protection film/silicon wafer, thereby obtaining a second laminate in which the film for forming a back surface protection film was attached to the silicon wafer as a work.

Further, the peeling film for peeling the support sheet is formed by using a wafer laminating machine provided in the same apparatus, and at a speed of laminating: 20mm/s, lamination pressure: and laminating the exposed surface of the adhesive layer of the support sheet and the exposed surface of the film for forming the back surface protection film under a lamination condition of 0.3MPa to obtain a third laminate in which the support sheet, the film for forming the back surface protection film and the semiconductor wafer are laminated in this order.

The conveying time of the work from the start of the first lamination process of attaching the film for forming the back surface protection film to the silicon wafer to the end of the second lamination process of attaching the support sheet to the film for forming the back surface protection film was 60 seconds.

The transport distance of the work from the attachment start position of the first lamination step of attaching the film for forming the back surface protection film to the silicon wafer to the attachment end position of the second lamination step of attaching the support sheet to the film for forming the back surface protection film was 2900 mm.

(thermal curing)

The third laminate was subjected to heat treatment at 130 ℃ for 2 hours to obtain a fourth laminate in which the back surface protective film, and the silicon wafer were laminated in this order.

(evaluation of laser marking)

The fourth laminate was printed by irradiating the surface of the back surface protective film on the adhesive layer side with laser light through the support sheet using a laser printing apparatus ("CSM 300M" manufactured by ltd. At this time, characters of 0.3mm × 0.2mm in size were printed.

Subsequently, the printing (laser printing) of the back surface protective film was visually observed through the support sheet, and the visibility of the printing (characters) was evaluated according to the following criteria. The results are shown in Table 1.

O: the printing is clear and can be easily visually recognized.

X: the printing is not clear and cannot be identified visually.

[ Table 1]

[ example 2]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 40 ℃ and pressure: 0.5MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

Further, a second laminate, a third laminate and a fourth laminate were produced in the same manner as in example 1, and evaluated by laser marking. The results are shown in Table 1.

[ example 3]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 50 ℃ and pressure: 0.5MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

[ example 4]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 60 ℃ and pressure: 0.5MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

[ example 5]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 70 ℃, pressure: 0.5MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

[ example 6]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 70 ℃, pressure: 0.7MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

[ example 7]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 70 ℃, pressure: 0.8MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

[ example 8]

Conditions for bonding the first release film to the exposed surface of the film for forming the back protection film when the second release film/film for forming the back protection film/first release film laminate (i.e., the first laminate) was prepared in example 1 were set as temperatures: 70 ℃, pressure: 0.9MPa, speed: the number of sheets having peeling defects was counted, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured in the same manner as in example 1 except that the number of sheets having peeling defects was 1 m/min.

Comparative example 1

(formation of film for Forming Back surface protection film)

The composition (III-1) thus obtained was applied to a release-treated surface (surface roughness: 218nm) of a release film (U4Z-50, manufactured by Teijin Dupont Films Co., Ltd., thickness 50 μm, corresponding to the second release film) obtained by subjecting one surface of a polyethylene terephthalate (PET) film to a release treatment by a silicone treatment, and dried at 100 ℃ for 3 minutes to form a film for forming a back surface protective film having a thickness of 25 μm.

Further, using a laminating roller, at a temperature: 70 ℃, pressure: 0.9MPa, speed: a release-treated surface (surface roughness: 30nm) of another release film (SP-PET 381031 manufactured by linetec Corporation, "38 μm thick, corresponding to the first release film) obtained by subjecting one surface of a polyethylene terephthalate (PET) film to a release treatment by a silicone treatment was bonded to an exposed surface (surface opposite to the side having the release film) of the back surface protection film-forming film from the first release film side under a condition of 1 m/min, thereby producing a laminated sheet (i.e., a first laminated body) in which release films were laminated on both surfaces of the back surface protection film-forming film.

The number of sheets having peeling defects was examined in the same manner as in example 1, the frequency of peeling defects was evaluated, and the surface roughness (Ra) was measured.

[ Table 2]

Industrial applicability

The method for manufacturing a third laminate and the method for manufacturing a fourth laminate according to the present invention can be used for manufacturing a semiconductor device with a back surface protective film.

Description of the reference numerals

1: a composite sheet for forming a protective film; 5: a first laminate; 6: a second laminate; 7: a semiconductor chip with a back surface protective film; 8: a semiconductor wafer; 8 b: a back side of the semiconductor wafer; 9: a semiconductor chip; 10: a support sheet; 11: a substrate; 12: an adhesive layer; 13: a film for forming a back surface protective film; 13': a back surface protective film; 13 a: a rough surface of the film for forming a back surface protection film; 13 b: a smooth surface of the film for forming a back surface protection film; 14: a workpiece; 14 a: a circuit side of the workpiece; 14 b: the back of the workpiece; 151: a first release film; 152: a second release film; 16: an adhesive layer for a jig; 17: a circuit surface protective tape; 18: a fixture for fixing; 19: a third laminate; 19': a fourth laminate; 20: a semiconductor device; 21: a semiconductor device with a back surface protective film; 21': a semiconductor device with a film for forming a back surface protective film; 62: an electronic component; 63: a circuit substrate; 63 a: a terminal forming surface; 64: and a sealing resin layer.

Claims

1. A method for producing a third laminate comprising a work, a film for forming a back surface protection film, and a support sheet laminated in this order,

the manufacturing method sequentially comprises the following steps:

2. The method of manufacturing a third laminate according to claim 1,

the device for attaching the film for forming the back surface protection film and the device for attaching the support sheet are connected and operated at least from the first laminating step to the second laminating step, or operated in the same device.

3. The method of manufacturing a third laminate according to claim 1 or 2,

the second laminate having the film for forming a back surface protection film attached to the work is conveyed one by one from the first lamination step to the second lamination step.

4. The method for producing a third laminate according to any one of claims 1 to 3, wherein,

the conveying distance of the workpiece from the bonding start position of the first laminating step to the bonding end position of the second laminating step is 7000mm or less.

5. The method for producing a third laminate according to any one of claims 1 to 4,

the conveyance time of the work from the start of the first laminating step to the end of the second laminating step is 150 seconds or less.

6. The method for producing a third laminate according to any one of claims 1 to 5, wherein,

protecting the circuit surface of the work with a circuit surface protecting tape,

7. The method of manufacturing a third laminate according to claim 6,

the back surface of the workpiece is a ground surface, and the circuit surface protection tape is a back grinding tape.

8. The method for producing a third laminate according to any one of claims 1 to 7,

the workpiece is a semiconductor wafer.

9. The method for producing a third laminate according to any one of claims 1 to 7,

the work is a semiconductor device panel composed of an aggregate of semiconductor devices in which at least one electronic component is sealed with a sealing resin.

10. The method for producing a third laminate according to any one of claims 1 to 9,

the support sheet is provided with an adhesive layer on a base material,

11. The method of manufacturing a third laminate according to claim 10,

the adhesive layer is curable by energy rays.

12. A method of manufacturing a third laminate according to any one of claims 1 to 11, comprising:

and a step of irradiating the film for forming the back surface protection film with laser from the support sheet side to perform laser marking.

13. A method for manufacturing a fourth laminate in which a work, a back surface protective film, and a support sheet are laminated in this order, comprising:

a step of curing the film for forming a back surface protection film of the third laminate produced by the production method according to any one of claims 1 to 12 to produce a back surface protection film.

14. The method of manufacturing a fourth laminate according to claim 13, comprising:

and a step of irradiating the back surface protection film with laser from the support sheet side to perform laser marking.

15. A method for manufacturing a semiconductor device with a back surface protective film, comprising:

a step of dicing the workpiece and the back surface protective film of the fourth laminate manufactured by the manufacturing method according to claim 13 or 14 to produce a semiconductor device with a back surface protective film; and

16. A method for manufacturing a semiconductor device with a back surface protective film, comprising:

a step of cutting the film for forming a back surface protection film and the work of the third laminate manufactured by the manufacturing method according to any one of claims 1 to 12 to produce a semiconductor device with a film for forming a back surface protection film;

17. The method for manufacturing a semiconductor device with a back surface protective film according to claim 15 or 16, wherein,

the film for forming a back surface protection film is thermosetting, and in the step of forming the back surface protection film, the film for forming a back surface protection film is thermally treated and thermally cured.

18. The method for manufacturing a semiconductor device with a back surface protective film according to claim 15 or 16, wherein,

the film for forming a back surface protection film is energy ray-curable, and in the step of forming the back surface protection film, the film for forming a back surface protection film is irradiated with an energy ray to be cured.

19. A third laminate comprising a work, a film for forming a back surface protective film, and a support sheet laminated in this order,