CN113675315A - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

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Publication number
CN113675315A
CN113675315A CN202010409811.2A CN202010409811A CN113675315A CN 113675315 A CN113675315 A CN 113675315A CN 202010409811 A CN202010409811 A CN 202010409811A CN 113675315 A CN113675315 A CN 113675315A
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substrate
layer
display panel
color conversion
barrier layer
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CN202010409811.2A
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CN113675315B (en
Inventor
李静静
王涛
王程功
姜博
顾杨
杨婷慧
韩赛赛
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Chengdu Vistar Optoelectronics Co Ltd
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Chengdu Vistar Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The invention relates to a display panel and a preparation method thereof. The preparation method of the display panel comprises the following steps: providing an LED substrate, wherein the LED substrate comprises a TFT backboard and a plurality of LED chips arranged at intervals; providing a first substrate, and forming a reflecting layer and a first barrier layer on the first substrate; and aligning and attaching the first substrate and the LED substrate. According to the preparation method of the display panel, the reflecting layer is prepared on the first substrate, so that the phenomenon that the reflecting layer is uneven in film thickness due to the fact that the reflecting layer is prepared on the LED chip can be avoided, and the display effect of the display panel is improved. Meanwhile, a first blocking layer is formed on the first substrate, and then the first substrate and the TFT backboard are aligned and attached, so that the binding stability of the TFT backboard and the LED chip can be prevented from being influenced by high temperature during preparation of the first blocking layer, and the display effect of the display panel is improved.

Description

Display panel and preparation method thereof
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
Micro-LEDs (Micro-Light-Emitting diodes, hereinafter referred to as Micro-LEDs) are a new generation of display technology, and have higher brightness, better Light-Emitting efficiency, and lower power consumption than the existing OLED technology.
In the conventional technology, a micro LED display panel usually uses a micro LED chip to emit emergent light, and then performs color conversion on the emergent light to obtain three colors of light.
The applicant found in the course of implementing the conventional technique that: the display effect of the micro LED display panel in the prior art is poor.
Disclosure of Invention
Therefore, it is necessary to provide a display panel and a method for manufacturing the same, aiming at the problem of poor display effect of the micro LED display panel in the conventional technology.
A method of manufacturing a display panel, comprising:
providing an LED substrate, wherein the LED substrate comprises a TFT backboard and a plurality of LED chips, and the LED chips are arranged on the TFT backboard at intervals;
providing a first substrate, and forming a reflecting layer and a first barrier layer on the first substrate, wherein the first barrier layer comprises a plurality of first receiving cavities arranged at intervals;
the first substrate and the LED substrate are attached, the first blocking layer is arranged between the TFT backboard and the first substrate, the LED chips are respectively located in the first containing cavities, and the orthographic projections of the LED chips on the first substrate and the orthographic projections of the reflecting layer on the first substrate are at least partially overlapped.
In one embodiment, the providing a first substrate, forming a reflective layer and a first barrier layer on the first substrate, the first barrier layer including a plurality of first receiving cavities arranged at intervals includes:
providing the first substrate, the first substrate having a first surface;
forming a plurality of reflectors arranged at intervals on the first surface, the plurality of reflectors constituting the reflective layer;
the first barrier layer is formed on the first surface, and the plurality of reflectors are respectively arranged in the plurality of first receiving cavities.
In one embodiment, the providing a first substrate, forming a reflective layer and a first barrier layer on the first substrate, the first barrier layer including a plurality of first receiving cavities arranged at intervals includes:
providing the first substrate, wherein the first substrate is provided with a first surface and a second surface which are opposite in a spaced mode;
forming the reflective layer on the first surface;
forming the first barrier layer on the second surface, wherein orthographic projections of the first receiving cavities on the second surface cover the reflecting layer.
In one embodiment, the first substrate is sectioned along any direction and through the first surface, and a section line on the first surface is a straight line.
In one embodiment, the method for manufacturing a display panel further includes:
providing a second substrate, and forming a second barrier layer on the second substrate, wherein the second barrier layer comprises a plurality of second receiving cavities arranged at intervals;
forming a color conversion layer on the second substrate, wherein the color conversion layer comprises a plurality of color conversion units which are spaced from each other and are respectively arranged in the second receiving cavities;
the second substrate is attached to the first substrate, the color conversion layer and the second barrier layer are arranged between the second substrate and the first substrate, and the orthographic projections of the color conversion units on the second substrate respectively cover the LED chips.
A display panel, comprising:
the LED substrate comprises a TFT backboard and a plurality of LED chips, and the LED chips are arranged on the TFT backboard at intervals;
the first substrate is positioned on one side of the TFT backboard, where the LED chip is arranged;
the first blocking layer is arranged on the first substrate and located between the first substrate and the TFT backboard, the first blocking layer comprises a plurality of first containing cavities, and the LED chips are located in the first containing cavities respectively;
the reflecting layer is arranged on the first substrate, and the orthographic projection of the LED chips on the first substrate is at least partially intersected with the orthographic projection of the reflecting layer on the first substrate.
In one embodiment, the first substrate has a first surface proximate to the TFT backplane;
the reflection layer is disposed on the first surface and includes a plurality of reflectors, and the plurality of reflectors are respectively located in the plurality of first receiving cavities.
In one embodiment, the first substrate has a first surface and a second surface which are opposite in interval, and the second surface is close to the TFT backboard;
the first blocking layer is arranged between the TFT backboard and the second surface;
the reflecting layer is arranged on the first surface.
In one embodiment, the first substrate is sectioned along any direction and through the first surface, and a section line on the first surface is a straight line.
In one embodiment, the display panel further includes:
the second substrate is arranged opposite to the first substrate at intervals;
the second barrier layer is arranged between the second substrate and the first substrate and comprises a plurality of second containing cavities which are arranged at intervals;
the color conversion layer is arranged between the second substrate and the first substrate and comprises a plurality of color conversion units which are mutually spaced, the plurality of color conversion units are respectively arranged in the plurality of second accommodating cavities, and orthographic projections of the plurality of color conversion units on the second substrate respectively cover the plurality of LED chips.
The preparation method of the display panel comprises the following steps: providing an LED substrate, wherein the LED substrate comprises a TFT backboard and a plurality of LED chips arranged at intervals; providing a first substrate, and forming a reflecting layer and a first barrier layer on the first substrate; and aligning and attaching the first substrate and the LED substrate. According to the preparation method of the display panel, the reflecting layer is prepared on the first substrate, so that the phenomenon that the reflecting layer is uneven in film thickness due to the fact that the reflecting layer is prepared on the LED chip can be avoided, and the display effect of the display panel is improved. Meanwhile, a first blocking layer is formed on the first substrate, and then the first substrate and the TFT backboard are aligned and attached, so that the binding stability of the TFT backboard and the LED chip can be prevented from being influenced by high temperature during preparation of the first blocking layer, and the display effect of the display panel is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic process flow diagram illustrating a method for fabricating a display panel according to an embodiment of the present disclosure;
FIG. 2 is a schematic process flow diagram of a method for manufacturing a display panel according to another embodiment of the present disclosure;
FIG. 3 is a schematic process flow diagram of a method for manufacturing a display panel according to another embodiment of the present disclosure;
FIG. 4 is a schematic process flow diagram illustrating a method for fabricating a display panel according to yet another embodiment of the present disclosure;
FIG. 5 is a schematic process flow diagram of a method for manufacturing a display panel according to another embodiment of the present disclosure;
FIG. 6 is a schematic process flow diagram illustrating a method for fabricating a display panel according to yet another embodiment of the present disclosure;
FIG. 7 is a schematic process flow diagram of a method for fabricating a display panel according to yet another embodiment of the present application;
FIG. 8 is a schematic process flow diagram of a method for fabricating a display panel according to yet another embodiment of the present application;
FIG. 9 is a schematic process flow diagram of a method for fabricating a display panel according to yet another embodiment of the present application;
FIG. 10 is a schematic process flow diagram of a method for fabricating a display panel according to yet another embodiment of the present application;
FIG. 11 is a schematic cross-sectional view illustrating a display panel according to an embodiment of the present application;
FIG. 12 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present disclosure;
FIG. 13 is a schematic cross-sectional view illustrating a display panel according to still another embodiment of the present application;
fig. 14 is a schematic cross-sectional view illustrating a display panel according to still another embodiment of the present application.
Wherein, the meanings represented by the reference numerals of the figures are respectively as follows:
10. a display panel;
100. an LED substrate;
110. a TFT backplane;
120. an LED chip;
130. a first substrate;
132. a first surface;
134. a second surface;
140. a reflective layer;
142. a reflector;
150. a first barrier layer;
152. a first receiving cavity;
160. a color conversion layer;
162. a color conversion unit;
170. a second substrate;
172. a second receiving cavity;
180. a second barrier layer.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In a conventional micro LED display panel, the distributed bragg reflector layer is usually formed directly on the micro LED chip. Because the surface flatness of the micro LED chip is poor, the film thickness uniformity of the formed distributed Bragg reflection layer is also poor, and the display effect of the micro LED display panel is influenced. Meanwhile, in a conventional micro LED display panel, a TFT (Thin Film Transistor) backplane is generally bonded to a micro LED chip, and then a first barrier layer for isolating the micro LED chip is formed on the TFT backplane. Since high temperature is required for forming the first barrier layer, the bonding stability of the TFT backplane and the micro LED chip may be affected by the process of forming the first barrier layer.
The application provides a little LED display panel and preparation method thereof, through the display panel of this preparation method preparation, can promote the membrane thickness homogeneity of distributed Bragg reflection stratum to promote display panel's display effect. Meanwhile, in the process of preparing the display panel by the preparation method, the binding stability of the TFT backboard and the micro LED chip can be prevented from being influenced by high temperature in the process of preparing the first barrier layer, so that the display effect of the display panel is improved.
It should be understood that, although the following embodiments of the present application describe the technical solution of the present application by taking the micro LED display panel and the manufacturing method thereof as examples, this does not mean that the technical solution of the present application can only be applied to the micro LED display panel. The invention conception of the application is as follows: and forming a distributed Bragg reflection layer and a first barrier layer on a first substrate, and then attaching the first substrate and the TFT backboard. Thereby improving the film thickness uniformity of the distributed Bragg reflection layer; and the stability of the TFT backboard is prevented from being influenced by high temperature during the preparation of the first barrier layer. In the application scenario of other display panels, such as an OLED (Organic Light-Emitting Diode) display panel, if the display panel and the method for manufacturing the same are also applied, it should be understood that the display panel and the method for manufacturing the same are also within the scope of the present application.
Referring to fig. 1 and 2, in some embodiments, the present application provides a method for manufacturing a display panel 10, including the following steps:
s100, providing an LED substrate 100, wherein the LED substrate includes a TFT backplane 110 and a plurality of LED chips 120; the LED chips 120 are disposed at intervals on the TFT backplane 110.
Specifically, the TFT backplane 110 generally includes a substrate and TFT circuitry located on the substrate. The substrate may be a flexible substrate made of a polyimide film, or may be a rigid substrate, which is not limited herein. The TFT circuit refers to a circuit including a thin film transistor and a capacitor. In general, a TFT circuit may include two or more thin film transistors and one or more capacitors. The TFT circuit is used to drive the LED chip 120 disposed on the TFT backplane 110, so that the LED chip 120 emits light.
The LED chip 120 is referred to herein as a Micro LED (Micro-LED) chip. The LED chip 120 is a micro light emitting diode chip that can emit light under the driving of the TFT circuit. Since the LED chip 120 is generally several micrometers to several tens of micrometers in size, it is also called a micro LED chip. The LED chip 120 may be a blue LED chip or an ultraviolet LED chip. In this embodiment, the LED chip 120 may adopt a blue chip, so as to emit blue light under the driving of the TFT circuit. It is understood that, in order to form the display panel 10, the number of the LED chips 120 disposed on the TFT backplane 110 may be plural. In one embodiment, the LED chips 120 are disposed on the TFT backplane 110 at intervals, and are driven by the TFT circuits in the TFT backplane 110 to realize display. Plural herein means two or more integers.
In this embodiment, the specific process of step S100 may be: after the LED chip 120 grows on the growth substrate, the LED chip 120 is adhered to the temporary substrate; removing the growth substrate by methods such as laser lift-off, thereby forming a discrete array of LED chips 120 on the temporary substrate; then picking up the LED chip 120 through the transfer head and moving onto the TFT backplane 110; finally, the connection between the LED chip 120 and the TFT backplane 110 is cured by means of heat soldering or the like.
S200, providing a first substrate 130, and forming a reflective layer 140 and a first barrier layer 150 on the first substrate 130, wherein the first barrier layer 150 includes a plurality of first receiving cavities 152 disposed at intervals.
Specifically, the first substrate 130 may be a transparent substrate made of glass, so that the light emitted from the LED chip 120 can penetrate through the first substrate 130.
A reflective layer 140 is formed on the first substrate. Generally, the reflective layer 140 is referred to herein as a distributed bragg reflector. When the LED chip 120 emits blue light, the reflective layer 140 is used to selectively transmit the blue light, i.e., the reflective layer 140 can only transmit the blue light and reflect other colors of light. In the present embodiment, the reflective layer 140 may be formed on the first substrate 130 by a chemical vapor deposition method or an atomic layer deposition method. In this process, since the reflective layer 140 is directly formed on the first substrate 130, it is avoided that the film thickness uniformity of the reflective layer 140 is affected due to the poor surface flatness of the LED chip 120.
Meanwhile, in this step, a first barrier layer 150 is also formed on the first substrate 130. The first blocking layer 150 can be made of opaque black, gray or yellow photoresist by photolithography. The first barrier layer 150 includes a plurality of first receiving cavities 152 disposed at intervals. That is, after the first barrier layer 150 is formed on the first substrate 130, a plurality of first receiving cavities 152 are formed on the first substrate 130.
It should be noted that in the method for manufacturing the display panel 10 of the present application, the reflective layer 140 and the first barrier layer 150 are both formed on the surface of the first substrate 130. Wherein, the positions of the first blocking layer 150 and the reflective layer 140 can be as shown in fig. 1: the first barrier layer 150 and the reflective layer 140 are formed on the same surface of the first substrate 130. The first barrier layer 150 and the reflective layer 140 may also be positioned as shown in fig. 2: the first barrier layer 150 and the reflective layer 140 are formed on different surfaces of the first substrate 130.
S300, the first substrate 130 and the LED substrate 100 are attached to each other, so that the first blocking layer 150 is disposed between the TFT backplane 110 and the first substrate 130, the LED chips 120 are respectively disposed in the first receiving cavities 152, and orthographic projections of the LED chips 120 on the first substrate 130 and orthographic projections of the reflective layer 140 on the first substrate 130 are at least partially overlapped.
The first substrate 130 on which the reflective layer 140 and the first barrier layer 150 are formed is aligned and bonded to the TFT backplane 110 on which the LED chip 120 is formed. The alignment bonding here means: after the first substrate 130 is attached to the LED substrate 100, the LED chip 120 on the TFT backplane 110 is located in the first receiving cavity 152 formed by the first blocking layer 150. After the alignment and bonding, the first blocking layer 150 is located between the TFT backplane 110 and the first substrate 130, so that one side of the LED chip 120 is the TFT backplane 110, and the other side is the first substrate 130 on which the reflective layer 140 is formed. The first blocking layer 150 surrounds the LED chips 120, so that light crosstalk caused by two adjacent LED chips 120 when the LED chips 120 emit light can be avoided. An orthogonal projection of the LED chip 120 on the first substrate 130 at least partially overlaps an orthogonal projection of the reflective layer 140 on the first substrate 130. Thus, as shown in fig. 1 and 2, after the first substrate 130 is aligned and bonded to the TFT backplane 110, if the LED chip 120 emits light, the light emitted from the LED chip 120 can only pass through the reflective layer 140 and the first substrate 130 and be emitted in a direction away from the TFT backplane 110. The reflective layer 140 may filter light emitted from the LED chip 120.
According to the manufacturing method of the display panel 10, the reflective layer 140 is manufactured on the first substrate 130, so that the influence on the film thickness uniformity of the reflective layer 140 due to poor surface flatness of the LED chip 120 can be avoided, and the display effect of the display panel 10 is improved. Meanwhile, the first blocking layer 150 is formed on the first substrate 130, and then the first substrate 130 and the TFT backplane 110 are aligned and attached, so that the binding stability between the TFT backplane 110 and the LED chip 120 can be prevented from being affected by the high temperature during the preparation of the first blocking layer 150, and the display effect of the display panel 10 is improved.
As is known from the above description, in the embodiments of the present application, the reflective layer 140 and the first barrier layer 150 may be located on the same side of the first substrate 130 or on different sides of the first substrate 130. The following description is made separately with reference to specific embodiments.
In one embodiment, as shown in fig. 3, the reflective layer 140 and the first barrier layer 150 are located on the same side of the first substrate 130. At this time, one surface of the first substrate 130 is defined as the first surface 132, and the reflective layer 140 and the first barrier layer 150 are formed on the first surface 132 of the first substrate 130. As shown in fig. 3, the step S200 may specifically include:
SA210, providing a first substrate 130, the first substrate 130 having a first surface 132.
SA220, wherein a plurality of reflectors 142 are formed on the first surface 132 at intervals, and the plurality of reflectors 142 form the reflective layer 140.
In the present embodiment, the reflective layer 140 may be prepared by a mask to form a plurality of reflectors 142 spaced apart from each other on the first surface 132 of the first substrate 130.
Specifically, in preparing the reflective layer 140, it is possible to: placing a mask on the first surface 132 of the first substrate 130, the mask having a plurality of spaced through holes extending through the mask; the material of the reflective layer 140 is deposited on the first surface 132 by a chemical vapor deposition method or an atomic deposition method.
SA230, forming a first barrier layer 150 on the first surface 132, wherein the plurality of reflectors 142 are respectively disposed in the plurality of first receiving cavities 152.
After the reflective layer 140 is formed on the first surface 132, the first barrier layer 150 is formed on the first surface 132. In the present embodiment, the plurality of reflectors 142 are spaced apart from each other, and the first barrier layer 150 is formed in the space between the reflectors 142 such that the first barrier layer 150 surrounds the reflectors 142. In other words, the first blocking layer forms a plurality of first receiving cavities 152, and the plurality of reflectors 142 are respectively disposed in the plurality of first receiving cavities 152. In this embodiment, the first barrier layer 150 may also be prepared by a reticle.
Specifically, in preparing to form the first barrier layer 150, one may: forming a layer of photoresist on the first surface 132 and the reflective layer 140, wherein the photoresist covers the first surface 132 and the reflective layer 140; and then, the photoresist is subjected to photoetching through a mask plate, so that the part of the photoresist covering the reflecting layer 140 is removed. Thus, the first barrier layer 150 filling the space of the reflector 142 is obtained, i.e., the first barrier layer 150 having a plurality of first receiving cavities 152 is formed. At this time, the plurality of reflectors 142 are respectively disposed in the plurality of first receiving cavities 152, and the height of the first barrier layer 150 is higher than that of the reflectors 142.
In the embodiment, the height of the first barrier layer 150 is higher than that of the reflector 142, so that the first substrate 130 and the LED substrate 100 are aligned and bonded. Generally, when the reflective layer 140 and the first barrier layer 150 are formed on the first surface 132 of the first substrate 130, the height of the first barrier layer 150 should satisfy the following condition:
after the first substrate 130 and the LED substrate 100 are aligned and bonded, the LED chip 120 does not press the reflector 142.
In another embodiment, as shown in fig. 4, the reflective layer 140 and the first barrier layer 150 are located on different sides of the first substrate 130. At this time, one surface of the first substrate 130 is defined as a first surface 132, the other surface of the first substrate is defined as a second surface 134, and the first surface 132 and the second surface 134 are spaced and opposed to each other. As shown in fig. 4, the step S200 may specifically include:
SC210, a first substrate 130 is provided, the first substrate 130 having a first surface 132 and a second surface 134 spaced apart from each other.
SC220, forming the reflective layer 140 on the first surface 132.
Unlike step SA210, in step SA210, the reflective layer 140 includes a plurality of reflectors 142 each disposed therebetween. In this embodiment, the reflective layer 140 is a continuous film. Here, the reflective layer 140 may be formed on the first surface 132 by a chemical vapor deposition method or an atomic deposition method.
And the SC230, forming the first barrier layer 150 on the second surface 134, wherein an orthogonal projection of the plurality of first receiving cavities 152 on the second surface 134 covers the reflective layer 140.
A first barrier layer 150 is formed on a second surface 134 opposite the first surface 132. The first barrier layer 150 forms a plurality of first receiving cavities 152 on the second surface 134, so that the LED chips 120 are received in the first receiving cavities 152 when the first substrate 130 is aligned with the LED substrate 100. Generally, in order to allow the light emitted from the LED chip 120 located in the first receiving cavity 152 to be filtered by the reflective layer 140 before entering the color conversion layer 160, therefore: an orthogonal projection of the first receiving cavity 152 on the second surface 134 covers the reflective layer 140. Here, the orthographic projection of the first receiving cavity 152 on the second surface 134 refers to: the projection of the first receiving cavity 152 on the second surface 134 is along a direction perpendicular to the second surface 134. Therefore, in the present embodiment, when the reflective layer 140 and the first barrier layer 150 are formed on different surfaces of the first substrate 130, the height of the first barrier layer 150 should satisfy the following condition:
after the first substrate 130 is aligned and bonded to the LED substrate 100, the LED chip 120 is not pressed by the first substrate 130.
In an embodiment, in the method for manufacturing the display panel 10, the first surface of the first substrate 130 is a flat surface.
Specifically, in the preparation method of the display panel 10 of the present application, the reflective layer 140 is prepared on the first substrate 130, so that the influence on the film thickness uniformity of the reflective layer 140 due to the poor surface flatness of the LED chip 120 can be avoided, and the display effect of the display panel 10 is improved. Based on this, in the above embodiment, the surface of the first substrate 130 for forming the reflective layer 140, i.e., the first surface 132, may be a flat surface. The leveling here means: when the first substrate 130 is cross-sectioned in any direction and through the first surface 132, the cross-sectional line on the first surface 132 is a straight line. Colloquially, the first surface may be a horizontal surface.
In one embodiment, as shown in fig. 5 or fig. 6, the method for manufacturing the display panel 10 of the present application further includes, after step S300:
s400, a color conversion layer 160 is formed on a side of the first substrate 130 away from the LED substrate 100.
Specifically, the display panel 10 generally performs light emission display by a combination of three primary colors, and thus the display panel 10 needs to emit red light, blue light, and green light. As is apparent from the above description, in the method of manufacturing the display panel 10 of the present application, the LED chip 120 used may emit blue light. The blue light emitted from the LED chip 120 is selectively transmitted through the reflective layer 140, and then exits only the blue light of the first substrate 130. Thus, in the present embodiment, a color conversion layer 160 is further formed on the side of the first substrate 130 away from the LED substrate 100 for performing color conversion on blue light. Fig. 5 is a schematic process flow diagram of the step S400 based on the situation that the reflective layer 140 and the first barrier layer 150 are located on the same side of the first substrate 130. Fig. 6 is a process flow diagram of step S400 based on the reflective layer 140 and the first barrier layer 150 being located on different sides of the first substrate 130.
The color conversion layer 160 may also include a plurality of color conversion units 162 spaced apart from each other corresponding to the plurality of LED chips 120 spaced apart from each other. Each color conversion unit 162 is used for color converting the blue light emitted from one LED chip 120. Here, the color conversion unit 162 may include a red light conversion unit, a green light conversion unit, and a transparent conversion unit. The red light conversion unit is used for converting blue light into red light; the green light conversion unit is used for converting blue light into green light; the transparent conversion unit is used for transmitting blue light. In this embodiment, quantum dot materials may be used as the material of the color conversion unit 162, and are not described herein again. In other embodiments, the LED chip 120 may also be an LED chip capable of emitting ultraviolet light. When the LED chip 120 emits ultraviolet light, the color conversion unit 162 may include a red light conversion unit, a green light conversion unit, and a blue light conversion unit. The red light conversion unit is used for converting ultraviolet light into red light; the green light conversion unit is used for converting ultraviolet light into green light; the blue light conversion unit is used for converting ultraviolet light into blue light.
It should be understood that, in order to improve the display effect of the display panel 10, in the present embodiment, the area of the orthographic projection of each color conversion unit 162 on the first substrate 130 may be slightly smaller than the area of the orthographic projection of the first receiving cavity 152 on the first substrate 130. Thus, the orthographic projection of the first receiving cavity 152 on the first substrate 130 can be made to cover the orthographic projection of the color conversion unit 162 on the first substrate 130. At this time, the blue light incident into the color conversion unit 162 is uniformly distributed, so that the uniformity of the light emitted from the color conversion unit 162 can be improved.
The following describes specific embodiments of step S400 based on different situations.
In one embodiment, when the reflective layer 140 and the first blocking layer 150 are located on the same side of the first substrate 130, the blue light emitted from the LED chip 120 first passes through the reflective layer 140 and then is emitted from the first substrate 130. The process flow of step S400, i.e. fig. 5, may be specifically as shown in fig. 7.
At this time, step S400 includes:
and an SA410 providing a second substrate 170, forming a second barrier layer 180 on the second substrate 170, the second barrier layer 180 including a plurality of second receiving cavities 172 arranged at intervals.
A second barrier layer 180 is formed on one surface of the second substrate 170. The second blocking layer 180 may be made of opaque black, gray or yellow photoresist by photolithography. The second barrier layer 180 includes a plurality of second receiving cavities 172 arranged at intervals. That is, after the second barrier layer 180 is formed on the second substrate 170, a plurality of second receiving cavities 172 are formed on the second substrate 170. The second receiving cavity 172 is for receiving the color conversion unit 162.
Generally, in order to make the blue light emitted from the LED chip 120 emitted from the first substrate 130 incident on the color conversion unit 162, the position of the second blocking layer 180 should satisfy:
after the display panel 10 is formed, the orthographic projection of the second receiving cavity 172 on the first substrate 130 can be made to fall within the coverage of the reflector 142. That is, after the display panel 10 is formed, the orthographic projection of the second barrier layer 180 on the first substrate 130 may cover or overlap the orthographic projection of the first barrier layer 150 on the first substrate 130.
In this embodiment, the second blocking layer 180 may also be formed by a mask preparation, which is not described in detail.
SA420, forming a color conversion layer 160 on the second substrate 170, wherein the color conversion layer 160 includes a plurality of color conversion units 162 spaced apart from each other, and the plurality of color conversion units 162 are respectively disposed in the plurality of second receiving cavities 172.
A plurality of color conversion units 162 are formed on the surface of the second substrate 170 on which the second barrier layer 180 is formed. The plurality of color conversion units 162 are formed in the plurality of second receiving cavities 172 such that the plurality of color conversion units 162 are spaced apart from each other. Thus, after the display panel 10 is formed, each color conversion unit 162 corresponds to one reflector 142 and one LED chip 120, so that blue light emitted from the LED chip 120 can enter the color conversion unit 162 after passing through the reflector 142 and the first substrate 130.
Similarly, when the color conversion unit 162 is formed, the color conversion unit 162 may be prepared in the second receiving cavity 172 by a mask. And will not be described in detail.
SA430, attaching the second substrate 170 and the first substrate 130, disposing the color conversion layer 160 and the second barrier layer 180 between the second substrate 170 and the first substrate 130, and disposing the plurality of color conversion units 162 and the plurality of LED chips 120 one by one.
The second substrate 170 is aligned and bonded to the first substrate 130. After the alignment and bonding, the range of the first substrate 130 exposed by the second barrier layer 180, that is, the range of the orthographic projection of the second receiving cavity 172 on the first substrate 130, should fall within the coverage of the reflector 142.
It should be understood that, in the above embodiments, the display panel manufacturing method of the present application is to attach the first substrate 130 and the LED substrate 100, and then attach the second substrate 170 with the color conversion layer 160 formed thereon to the first substrate 130. In other embodiments, the second substrate 170 and the first substrate 130 may be attached first, and then the first substrate 130 and the LED substrate 100 are attached. And will not be described in detail.
Further, before the step SA430, the method may further include:
SA440, encapsulates the color conversion unit 162.
The color conversion unit 162 may be encapsulated within the second barrier layer 180, the thin film encapsulation layer, and the second substrate 170 by forming a thin film encapsulation layer, thereby preventing the color conversion unit 162 from coming into contact with water and oxygen in the air. Here, the thin film encapsulation layer may include an organic layer, an inorganic layer, and an organic layer, which are stacked.
In another embodiment, when the reflective layer 140 and the first blocking layer 150 are located on different sides of the first substrate 130, the blue light emitted from the LED chip 120 first passes through the first substrate 130 and then is emitted from the reflective layer 140. The process flow of step S400, i.e. fig. 6, may be specifically as shown in fig. 8.
At this time, step S400 includes:
and an SC410, providing a second substrate 170, and forming a second barrier layer 180 on the second substrate 170, wherein the second barrier layer 180 includes a plurality of second receiving cavities 172 arranged at intervals.
This step is the same as step SA410, except that: after the display panel 10 is formed in steps SA410 to SA430, the blue light emitted from the LED chip 120 firstly enters the reflective layer 140, then enters the first substrate 130 from the reflective layer 140, and finally enters the color conversion layer 160 from the first substrate 130. After the display panel 10 is formed in the present embodiment, the blue light emitted from the LED chip 120 firstly enters the first substrate 130, then enters the reflective layer 140 from the first substrate 130, and finally enters the color conversion layer 160 from the reflective layer 140. And will not be described in detail.
And the SC420, forming the color conversion layer 160 on the second substrate 170, wherein the color conversion layer 160 includes a plurality of color conversion units 162 spaced from each other, and the plurality of color conversion units 162 are respectively disposed in the plurality of second receiving cavities 172.
SC430, the second substrate 170 and the first substrate 130 are attached, the color conversion layer 160 and the second barrier layer 180 are disposed between the second substrate 170 and the first substrate 130, and the plurality of color conversion units 162 are in one-to-one correspondence with the plurality of LED chips 120.
Step SC420 is the same as step SC430, and is not described again.
In this embodiment, the distance between the reflective layer 140 and the color conversion layer 160 is closer, so that the occurrence of the optical crosstalk phenomenon can be effectively prevented on the basis of ensuring that the reflective layer 140 reflects red light and green light and transmits blue light.
Similarly, in some other embodiments, the second substrate 170 may be attached to the first substrate 130, and then the first substrate 130 may be attached to the LED substrate 100. And will not be described in detail.
Further, before the step SC430, the method may further include:
the SC440 encapsulates the color conversion unit 162.
In the above embodiment, the second blocking layer 180 and the color conversion layer 160 are formed on the second substrate 170, and then the second substrate 170 and the first substrate 140 are aligned and bonded to obtain the display panel 10. In other embodiments, the second barrier layer 180 and the color conversion layer 160 may be directly formed on the first substrate 130 or the reflective layer 140, and then the color conversion layer 160 is encapsulated by using the second substrate 170.
In one embodiment, when the reflective layer 140 and the first blocking layer 150 are located on the same side of the first substrate 130, the blue light emitted from the LED chip 120 first passes through the reflective layer 140 and then is emitted from the first substrate 130. The process flow of step S400, i.e. fig. 5, may be specifically as shown in fig. 9.
At this time, step S400 includes:
and the SD410 is a second barrier layer 180 formed on the side of the first substrate 130 away from the LED substrate 100, wherein the second barrier layer 180 includes a plurality of second receiving cavities 172 arranged at intervals.
The second barrier layer 180 is formed on a side of the first substrate 130 away from the LED substrate 100, i.e., a side away from the first barrier layer 150. The second blocking layer 180 may be made of opaque black, gray or yellow photoresist by photolithography. The second barrier layer 180 includes a plurality of second receiving cavities 172 arranged at intervals. That is, after the second barrier layer 180 is formed on the first substrate 130, a plurality of second receiving cavities 172 are formed on the first substrate 130. The second receiving cavity 172 is for receiving the color conversion unit 162.
Generally, in order to make the blue light emitted from the LED chip 120 emitted from the first substrate 130 incident on the color conversion unit 162, the position of the second blocking layer 180 should satisfy:
after the display panel 10 is formed, the orthographic projection of the second receiving cavity 172 on the first substrate 130 can be made to fall within the coverage of the reflector 142. That is, the orthographic projection of the second barrier layer 180 on the first substrate 130 may cover or overlap the orthographic projection of the first barrier layer 150 on the first substrate 130.
In this embodiment, the second barrier layer 180 may also be formed by mask preparation. Specifically, in preparing to form the second barrier layer 180, one may: firstly, forming a photoresist covering the first substrate 130 on one side of the first substrate 130 far away from the LED substrate 100; the photoresist is then patterned by a mask to form a second receiving cavity 172 for receiving the color conversion unit 162.
In the SD420, the color conversion layer 160 is formed on the first substrate 130, the color conversion layer 160 includes a plurality of color conversion units 162 spaced from each other, and the plurality of color conversion units 162 are respectively disposed in the plurality of second receiving cavities 172.
A plurality of color conversion units 162 are formed on a side of the first substrate 130 away from the LED substrate 100, i.e., a side away from the first barrier layer 150. The plurality of color conversion units 162 are formed in the plurality of second receiving cavities 172 such that the plurality of color conversion units 162 are spaced apart from each other. At this time, each color conversion unit 162 corresponds to one reflector 142, so that the blue light emitted from the LED chip 120 can enter the color conversion unit 162 after passing through the reflector 142 and the first substrate 130.
When the color conversion unit 162 is formed, the color conversion unit 162 may be prepared into the plurality of second receiving cavities 172 through a mask. Therefore, the color conversion units 162 can be spaced from each other by the second blocking layer 180, so that light crosstalk between adjacent color conversion units 162 is avoided when the display panel 10 operates.
In general, in order to space the plurality of color conversion cells 162 from each other by the second blocking layer 180, the height of the second blocking layer 180 may be equal to or greater than the height of the color conversion cells 162.
And the SD430 is formed on the second barrier layer 180 and the color conversion unit 162 on a side away from the first substrate 130 to encapsulate the color conversion unit 162.
That is, the color conversion unit 162 is encapsulated by the second substrate 170, so that the color conversion unit 162 is prevented from contacting water and oxygen in the air.
It should be understood that, in the above embodiments, in the method for manufacturing a display panel of the present application, the first substrate 130 is attached to the LED substrate 100, and then the color conversion unit 162 is formed on the side of the first substrate 130 away from the LED substrate 100. In other embodiments, the color conversion unit 162 may be formed on the side of the first substrate 130 away from the first blocking layer 150, and then the first substrate 130 is attached to the LED substrate 100. And will not be described in detail.
In another embodiment, when the reflective layer 140 and the first blocking layer 150 are located on different sides of the first substrate 130, the blue light emitted from the LED chip 120 first passes through the first substrate 130 and then is emitted from the reflective layer 140. The process flow of step S400, i.e. fig. 6, may be specifically as shown in fig. 10.
At this time, step S400 includes:
and SE410, forming a second barrier layer 180 on a side of the reflective layer 140 away from the LED substrate 100, where the second barrier layer 180 includes a plurality of second receiving cavities 172 arranged at intervals.
This step is substantially the same as step SD410, except that: in step SD410, a second barrier layer 180 is formed on the surface of the first substrate 130; in this step, the second blocking layer 180 is formed on the surface of the reflective layer 140. Therefore, after the display panel 10 is formed in steps SD410 to SD430, the blue light emitted from the LED chip 120 firstly enters the reflective layer 140, then enters the first substrate 130 from the reflective layer 140, and finally enters the color conversion layer 160 from the first substrate 130. After the display panel 10 is formed in the present embodiment, the blue light emitted from the LED chip 120 firstly enters the first substrate 130, then enters the reflective layer 140 from the first substrate 130, and finally enters the color conversion layer 160 from the reflective layer 140. And will not be described in detail.
In the SE420, the color conversion layer 160 is formed on the reflective layer 140, the color conversion layer 160 includes a plurality of color conversion units 162 spaced from each other, and the plurality of color conversion units 162 are respectively disposed in the plurality of second receiving cavities 172.
And SE430, forming a second substrate 170 on the second barrier layer 180 and a side of the color conversion unit 162 away from the first substrate 130 to encapsulate the color conversion unit 162.
Similarly, in some other embodiments, the color conversion unit 162 may be formed on the side of the first substrate 130 away from the first barrier layer 150, and then the first substrate 130 is attached to the LED substrate 100. And will not be described in detail.
In this embodiment, the distance between the reflective layer 140 and the color conversion layer 160 is closer, so that the occurrence of the optical crosstalk phenomenon can be effectively prevented on the basis of ensuring that the reflective layer 140 reflects red light and green light and transmits blue light.
In one embodiment, as shown in fig. 11 or 12, the present application also provides a display panel 10 including an LED substrate 100, a first substrate 130, a first barrier layer 150, and a reflective layer 140.
Specifically, the LED substrate 100 includes a TFT back plate 110 and a plurality of LED chips 120, and the plurality of LED chips 120 are disposed on the TFT back plate 110 at intervals.
A first substrate 130 located at one side of the TFT backplane 110 where the LED chip 120 is disposed; i.e., spaced apart from and opposite the TFT backplane 110.
The first blocking layer 150 is disposed on the first substrate 130 and between the first substrate 130 and the TFT backplane 110. The first barrier layer 150 includes a plurality of first receiving cavities 152, and the plurality of LED chips 120 are respectively received in the first receiving cavities 152.
The reflective layer 140 is disposed on the first substrate 130, and an orthogonal projection of the plurality of LED chips 120 on the first substrate 130 at least partially overlaps an orthogonal projection of the reflective layer 140 on the first substrate 130. For example, a plurality of LED chips 120 may be disposed in spaced opposition to the reflective layer 140 as shown in the figure.
Further, as shown in fig. 11, the first substrate 130 has a first surface 132, and the first surface 132 is adjacent to the TFT backplane 110.
The reflective layer 140 is disposed on the first surface 132 and includes a plurality of reflectors 142, and the reflectors 142 are respectively received in the first receiving cavities 152.
In another embodiment, as shown in fig. 12, the first substrate 130 has a first surface 132 and a second surface 134 spaced apart from each other, the second surface 134 being adjacent to the TFT backplane 110.
The first barrier layer 150 is disposed between the TFT backplane 110 and the second surface 134; the reflective layer 140 is disposed on the first surface 132.
In one embodiment, the first surface 132 is a flat surface. The leveling here means: the first substrate 130 is sectioned along any direction and through the first surface 132, and the section line on the first surface 132 is a straight line.
In one embodiment, as shown in fig. 13 or 14, the display panel 10 of the present application further includes: a second substrate 170, a second barrier layer 180, and a color conversion layer 160.
Specifically, the second substrate 170 is disposed opposite to the first substrate 130 at a distance.
The second barrier layer 180 is disposed between the second substrate 170 and the first substrate 130, and the second barrier layer 180 includes a plurality of second receiving cavities 172 disposed at intervals.
The color conversion layer 160 is disposed between the second substrate 170 and the first substrate 130, the color conversion layer 160 includes a plurality of color conversion units 162 disposed at intervals and disposed in the plurality of second receiving cavities 172, and orthographic projections of the plurality of color conversion units 162 on the second substrate 170 respectively cover orthographic projections of the plurality of LED chips 120 on the second substrate 170, that is, the plurality of color conversion units 162 are opposite to the plurality of LED chips 120 one by one.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A method for manufacturing a display panel, comprising:
providing an LED substrate, wherein the LED substrate comprises a TFT backboard and a plurality of LED chips, and the LED chips are arranged on the TFT backboard at intervals;
providing a first substrate, and forming a reflecting layer and a first barrier layer on the first substrate, wherein the first barrier layer comprises a plurality of first receiving cavities arranged at intervals;
the first substrate and the LED substrate are attached, the first blocking layer is arranged between the TFT backboard and the first substrate, the LED chips are respectively located in the first containing cavities, and the orthographic projections of the LED chips on the first substrate and the orthographic projections of the reflecting layer on the first substrate are at least partially overlapped.
2. The method for manufacturing a display panel according to claim 1, wherein the providing a first substrate, and forming a reflective layer and a first barrier layer on the first substrate, the first barrier layer including a plurality of first receiving cavities arranged at intervals comprises:
providing the first substrate, the first substrate having a first surface;
forming a plurality of reflectors arranged at intervals on the first surface, the plurality of reflectors constituting the reflective layer;
the first barrier layer is formed on the first surface, and the plurality of reflectors are respectively arranged in the plurality of first receiving cavities.
3. The method for manufacturing a display panel according to claim 1, wherein the providing a first substrate, and forming a reflective layer and a first barrier layer on the first substrate, the first barrier layer including a plurality of first receiving cavities arranged at intervals, comprises:
providing the first substrate, wherein the first substrate is provided with a first surface and a second surface which are opposite in a spaced mode;
forming the reflective layer on the first surface;
forming the first barrier layer on the second surface, wherein orthographic projections of the first receiving cavities on the second surface cover the reflecting layer.
4. The method according to claim 2 or 3, wherein the first substrate is sectioned in an arbitrary direction and across the first surface, and a section line on the first surface is a straight line.
5. The method for manufacturing a display panel according to claim 1, further comprising:
providing a second substrate, and forming a second barrier layer on the second substrate, wherein the second barrier layer comprises a plurality of second receiving cavities arranged at intervals;
forming a color conversion layer on the second substrate, wherein the color conversion layer comprises a plurality of color conversion units which are spaced from each other and are respectively arranged in the second receiving cavities;
the second substrate is attached to the first substrate, the color conversion layer and the second barrier layer are arranged between the second substrate and the first substrate, and orthographic projections of the plurality of color conversion units on the second substrate respectively cover orthographic projections of the plurality of LED chips on the second substrate.
6. A display panel, comprising:
the LED substrate comprises a TFT backboard and a plurality of LED chips, and the LED chips are arranged on the TFT backboard at intervals;
the first substrate is positioned on one side of the TFT backboard, where the LED chip is arranged;
the first blocking layer is arranged on the first substrate and located between the first substrate and the TFT backboard, the first blocking layer comprises a plurality of first containing cavities, and the plurality of LED chips are located in the plurality of first containing cavities respectively;
the reflecting layer is arranged on the first substrate, and orthographic projections of the LED chips on the first substrate are at least partially overlapped with orthographic projections of the reflecting layer on the first substrate.
7. The display panel of claim 6, wherein the first substrate has a first surface proximate to the TFT backplane;
the reflection layer is disposed on the first surface and includes a plurality of reflectors, and the plurality of reflectors are respectively located in the plurality of first receiving cavities.
8. The display panel of claim 6, wherein the first substrate has first and second spaced apart opposing surfaces, the second surface being proximate to the TFT backplane;
the first blocking layer is arranged between the TFT backboard and the second surface;
the reflecting layer is arranged on the first surface.
9. The display panel according to claim 7 or 8, wherein the first substrate is sectioned in an arbitrary direction and across the first surface, and a sectional line at the first surface is a straight line.
10. The display panel of claim 6, further comprising:
the second substrate is arranged opposite to the first substrate at intervals;
the second barrier layer is arranged between the second substrate and the first substrate and comprises a plurality of second containing cavities which are arranged at intervals;
the color conversion layer is arranged between the second substrate and the first substrate and comprises a plurality of color conversion units which are mutually spaced, the plurality of color conversion units are respectively positioned in the plurality of second accommodating cavities, and orthographic projections of the plurality of color conversion units on the second substrate respectively cover orthographic projections of the plurality of LED chips on the second substrate.
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