CN113661476A - 显示基板及其制备方法、显示装置 - Google Patents
显示基板及其制备方法、显示装置 Download PDFInfo
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- CN113661476A CN113661476A CN202080000262.1A CN202080000262A CN113661476A CN 113661476 A CN113661476 A CN 113661476A CN 202080000262 A CN202080000262 A CN 202080000262A CN 113661476 A CN113661476 A CN 113661476A
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- 239000000758 substrate Substances 0.000 title claims abstract description 441
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000012360 testing method Methods 0.000 claims abstract description 639
- 229910052751 metal Inorganic materials 0.000 claims abstract description 286
- 239000002184 metal Substances 0.000 claims abstract description 286
- 230000002093 peripheral effect Effects 0.000 claims abstract description 204
- 238000012546 transfer Methods 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims description 1277
- 239000011810 insulating material Substances 0.000 claims description 100
- 238000004519 manufacturing process Methods 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 69
- 238000000059 patterning Methods 0.000 claims description 57
- 239000011229 interlayer Substances 0.000 claims description 55
- 238000002161 passivation Methods 0.000 claims description 41
- 239000007769 metal material Substances 0.000 claims description 31
- 238000005452 bending Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 115
- 239000003990 capacitor Substances 0.000 description 49
- 239000000523 sample Substances 0.000 description 40
- 239000010936 titanium Substances 0.000 description 38
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- 229910052719 titanium Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- 238000003860 storage Methods 0.000 description 28
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- 238000001514 detection method Methods 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000000956 alloy Substances 0.000 description 16
- 239000011368 organic material Substances 0.000 description 16
- 239000004642 Polyimide Substances 0.000 description 15
- 238000005538 encapsulation Methods 0.000 description 15
- 229920001721 polyimide Polymers 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 14
- 230000006870 function Effects 0.000 description 14
- 229910052750 molybdenum Inorganic materials 0.000 description 14
- 239000011733 molybdenum Substances 0.000 description 14
- 239000002356 single layer Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229920000178 Acrylic resin Polymers 0.000 description 11
- 239000004925 Acrylic resin Substances 0.000 description 11
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 11
- 239000005011 phenolic resin Substances 0.000 description 11
- 239000002096 quantum dot Substances 0.000 description 11
- 239000004954 Polyphthalamide Substances 0.000 description 10
- 229920006375 polyphtalamide Polymers 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical class C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical class [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical class [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 150000002290 germanium Chemical class 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 4
- 229920000058 polyacrylate Polymers 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920006393 polyether sulfone Polymers 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- 239000011112 polyethylene naphthalate Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical class [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 150000003384 small molecules Chemical class 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GTLQJUQHDTWYJC-UHFFFAOYSA-N zinc;selenium(2-) Chemical class [Zn+2].[Se-2] GTLQJUQHDTWYJC-UHFFFAOYSA-N 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002274 desiccant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
- H01L2224/06154—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry covering only portions of the surface to be connected
- H01L2224/06155—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种显示基板及其制备方法、显示装置。该显示基板(1)包括衬底基板(100)、子像素单元(20)、数据线(103)、扫描线(105)、多个测试接触垫(1071)周边区第一绝缘层(1074)以及辅助电极层。衬底基板(100)包括显示区(101)以及周边区(102),周边区(102)包括测试邦定区(107)。多个测试接触垫每个(1071)包括第一测试接触垫金属层(1072)以及第二测试接触垫金属层(1073),第二测试接触垫金属层(1073)覆盖所述第一测试接触垫金属层(1072)且至少在第一测试接触垫金属层(1072)的至少部分周边与第一测试接触垫金属层(1072)接触,辅助电极层包括位于测试邦定区(107)中的多个第一转接电极图案(1076)以及位于显示区(101)中的多个辅助电极(219)。
Description
PCT国内申请,说明书已公开。
Claims (25)
- PCT国内申请,权利要求书已公开。
Priority Applications (1)
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CN202410221837.2A CN118102778A (zh) | 2020-03-12 | 2020-03-12 | 显示基板及其制备方法、显示装置 |
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PCT/CN2020/079005 WO2021179251A1 (zh) | 2020-03-12 | 2020-03-12 | 显示基板及其制备方法、显示装置 |
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CN202410221837.2A Division CN118102778A (zh) | 2020-03-12 | 2020-03-12 | 显示基板及其制备方法、显示装置 |
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CN113661476A true CN113661476A (zh) | 2021-11-16 |
CN113661476B CN113661476B (zh) | 2024-04-02 |
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CN202410221837.2A Pending CN118102778A (zh) | 2020-03-12 | 2020-03-12 | 显示基板及其制备方法、显示装置 |
CN202080000262.1A Active CN113661476B (zh) | 2020-03-12 | 2020-03-12 | 显示基板及其制备方法、显示装置 |
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Country Status (3)
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US (1) | US20220328599A1 (zh) |
CN (2) | CN118102778A (zh) |
WO (1) | WO2021179251A1 (zh) |
Families Citing this family (3)
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KR20220007830A (ko) * | 2020-07-10 | 2022-01-19 | 삼성디스플레이 주식회사 | 회로 기판 및 이를 포함하는 표시 장치 |
CN114286510B (zh) * | 2021-12-28 | 2024-01-19 | 武汉天马微电子有限公司 | 线路板、显示模组及显示装置 |
CN117158126A (zh) * | 2022-02-18 | 2023-12-01 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN204463778U (zh) * | 2015-01-08 | 2015-07-08 | 昆山龙腾光电有限公司 | 显示面板及显示面板测试治具 |
CN107544720A (zh) * | 2016-06-23 | 2018-01-05 | 株式会社日本显示器 | 阵列基板、显示装置以及传感器电极的检查方法 |
US20190116662A1 (en) * | 2016-05-24 | 2019-04-18 | Boe Technology Group Co., Ltd. | Circuit board structure, binding test method and display device |
CN110867139A (zh) * | 2019-11-28 | 2020-03-06 | 上海中航光电子有限公司 | 一种阵列基板、显示面板及显示装置 |
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US11600234B2 (en) * | 2015-10-15 | 2023-03-07 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate and driving method thereof |
KR102652572B1 (ko) * | 2018-12-03 | 2024-03-28 | 엘지디스플레이 주식회사 | 플렉서블 전계 발광 표시장치 |
CN109725447B (zh) * | 2019-02-22 | 2023-11-28 | 武汉华星光电技术有限公司 | 阵列基板、显示面板及显示装置 |
CN110289225B (zh) * | 2019-06-28 | 2022-04-15 | 京东方科技集团股份有限公司 | 测试装置及方法、显示装置 |
CN116916700A (zh) * | 2020-06-18 | 2023-10-20 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
CN112562586B (zh) * | 2020-08-28 | 2022-10-25 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN113451385B (zh) * | 2021-08-30 | 2021-11-12 | 北京京东方技术开发有限公司 | 显示基板和显示装置 |
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2020
- 2020-03-12 US US17/436,149 patent/US20220328599A1/en active Pending
- 2020-03-12 CN CN202410221837.2A patent/CN118102778A/zh active Pending
- 2020-03-12 CN CN202080000262.1A patent/CN113661476B/zh active Active
- 2020-03-12 WO PCT/CN2020/079005 patent/WO2021179251A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN204463778U (zh) * | 2015-01-08 | 2015-07-08 | 昆山龙腾光电有限公司 | 显示面板及显示面板测试治具 |
US20190116662A1 (en) * | 2016-05-24 | 2019-04-18 | Boe Technology Group Co., Ltd. | Circuit board structure, binding test method and display device |
CN107544720A (zh) * | 2016-06-23 | 2018-01-05 | 株式会社日本显示器 | 阵列基板、显示装置以及传感器电极的检查方法 |
CN110867139A (zh) * | 2019-11-28 | 2020-03-06 | 上海中航光电子有限公司 | 一种阵列基板、显示面板及显示装置 |
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US20220328599A1 (en) | 2022-10-13 |
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WO2021179251A1 (zh) | 2021-09-16 |
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