CN113629218A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN113629218A CN113629218A CN202110814349.9A CN202110814349A CN113629218A CN 113629218 A CN113629218 A CN 113629218A CN 202110814349 A CN202110814349 A CN 202110814349A CN 113629218 A CN113629218 A CN 113629218A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The embodiment of the invention provides a display panel and a preparation method of the display panel, when a quantum dot light-emitting layer for forming the display panel is prepared, a peripheral retaining wall structure is formed on a substrate through a glue dispensing process, a plurality of mutually connected blocking grid structures are arranged inside the peripheral retaining wall, a quantum dot light-emitting material is arranged in the blocking grid structures, the uniformity of the quantum dot light-emitting material is ensured through the blocking grid structures, meanwhile, an electric field is applied to the quantum dot light-emitting material, the quantum dot light-emitting material is cured, and finally, a quantum dot light-emitting film layer provided by the embodiment of the application is formed. The quantum dot film layer prepared by the preparation method of the quantum dot light-emitting layer provided by the embodiment of the application is more uniform and has better performance.
Description
Technical Field
The invention relates to the technical field of display panel manufacturing, in particular to a display panel and a preparation method of the display panel.
Background
An Organic Light Emitting Diode (OLED) display device has many advantages such as self-luminescence, low driving voltage, high light emitting efficiency, short response time, high contrast ratio, and wide temperature range, and is considered as the most promising display device.
With the continuous development and improvement of the manufacturing technology, high-resolution OLEDs and display devices with high-quality light emitting effects are gradually developed. Accordingly, in the case of a display device, the light emission of the light-emitting functional layer in the device will directly affect the light-emitting performance of the whole device. In the prior art, the luminescent performance of the display device is better improved by the luminescent functional layer of the quantum dot material. The color gamut of the quantum dot display technology can reach 110%, so that the luminescent film layer prepared from the quantum dot material can endow the display with a wider color gamut, and the display terminal has more beautiful color expression. However, in the prior art, when a quantum dot luminescent film layer is prepared and formed, the preparation method mainly comprises a photoetching method and an ink-jet printing method. However, the quantum dot luminescent film layer prepared by the processing method has the problems of low luminescent efficiency, poor stability, long processing time and the like. Further, the luminous performance and quality of the display device are affected, and the improvement and improvement of the overall performance of the display device are not facilitated.
In summary, when the quantum dot light-emitting film layer in the display device is formed, the existing preparation process often has the problems of low light-emitting efficiency of the formed quantum dot light-emitting film layer, poor stability of the quantum dot light-emitting film layer, complex preparation process, long processing time and the like, and is not favorable for further improving the light-emitting performance of the display device.
Disclosure of Invention
The embodiment of the invention provides a display panel and a preparation method of the display panel, which are used for effectively solving the problems that the luminescent effect of a prepared quantum dot luminescent film layer is not ideal and the like when the quantum dot luminescent film layer is prepared and formed in the prior art.
In order to solve the above technical problem, the technical method provided by the embodiment of the present invention is as follows:
in a first aspect of the embodiments of the present invention, a method for manufacturing a display panel is provided, including the following steps:
providing a substrate base plate;
dispensing glue on the periphery of the substrate base plate to form at least one circle of peripheral retaining wall structure;
dispensing glue in an area surrounded by the peripheral retaining wall structures, and forming a plurality of blocking grid structures connected with the peripheral retaining wall structures;
coating quantum dot luminescent materials in the blocking lattice structure, removing redundant quantum dot luminescent materials, and applying an electric field to the quantum dot luminescent materials;
and curing the quantum dot luminescent material and forming a quantum dot luminescent film.
According to an embodiment of the present invention, when the peripheral wall structure is formed by dispensing, the method further includes the following steps:
providing a dispensing nozzle, wherein the glue discharging direction of the dispensing nozzle is vertical to the substrate base plate;
placing the substrate base plate below the glue dispensing nozzle, and heating glue in the storage chamber;
providing input air pressure to the storage chamber and enabling the glue to be coated on the substrate base plate.
According to an embodiment of the invention, when the glue is heated, the heating temperature is 10-80 ℃, and the heating time is 20-30 min.
According to an embodiment of the invention, the distance between the dispensing nozzle and the substrate base plate is 10 mm-99 mm.
According to an embodiment of the present invention, the input air pressure has an air pressure value of 0.5kg/cm2～10kg/cm2。
According to an embodiment of the invention, the viscosity of the glue for dispensing is 2500 MPa-s-3560 MPa-s, and the moving speed of the dispensing nozzle is 50-80 mm/s during the dispensing process.
According to an embodiment of the invention, when an electric field is applied to the quantum dot light-emitting material, the intensity of the electric field is 5 x105V/m-4*107V/m and the application time of the electric field is between 10s and 360 s.
According to an embodiment of the invention, when the barrier lattice structures are formed, the barrier lattice structures are symmetrically distributed relative to a center line of the substrate base plate.
According to a second aspect of the embodiments of the present invention, there is also provided a display panel including:
a substrate base plate;
a quantum dot light emitting layer disposed on the substrate base plate; and the number of the first and second groups,
an encapsulation layer disposed on the quantum dot light emitting layer;
the display panel further comprises a peripheral retaining wall structure and a blocking grid structure, the peripheral retaining wall structure is arranged on the periphery of the quantum dot light-emitting layer, the blocking grid structure is arranged in the quantum dot light-emitting layer and divides the quantum dot light-emitting layer into a plurality of areas, and the quantum dot light-emitting layer is prepared by the preparation method in the embodiment of the application.
According to an embodiment of the present invention, the height of the peripheral retaining wall structure is greater than the height of the blocking grid structure.
In summary, the embodiments of the present invention have the following beneficial effects:
the embodiment of the invention provides a display panel and a preparation method of the display panel, when a quantum dot light-emitting layer for forming the display panel is prepared, a peripheral retaining wall structure is formed on a substrate through a glue dispensing process, a plurality of mutually connected blocking grid structures are arranged inside the peripheral retaining wall, a quantum dot light-emitting material is arranged in the blocking grid structures, the uniformity of the quantum dot light-emitting material is ensured through the blocking grid structures, meanwhile, an electric field is applied to the quantum dot light-emitting material, the quantum dot light-emitting material is cured, and finally, a quantum dot light-emitting film layer provided by the embodiment of the application is formed. The quantum dot film layer prepared by the preparation method of the quantum dot light-emitting layer provided by the embodiment of the application is more uniform and has better performance. Thereby effectively improving the luminous performance and quality of the display panel.
Drawings
The technical solution and other advantages of the present invention will become more apparent from the detailed description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic flow chart of a process for preparing a quantum dot light-emitting layer provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a display panel corresponding to the manufacturing method provided in the embodiment of the present application;
FIG. 3 is a schematic plan view of a barrier lattice structure provided in an embodiment of the present application;
fig. 4 is a schematic view of a processing process of a quantum dot luminescent material according to an embodiment of the present disclosure.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
The quantum dot luminescent material is a nano-scale semiconductor material, has a quantum effect, and can emit fluorescence of different colors under the excitation of electricity or light, so that the luminescent performance of the display panel is effectively improved. When the quantum dot light-emitting layer is prepared and formed, a photoetching method or an ink-jet printing method is generally adopted in the prior art for preparation, but the quantum dot light-emitting layer prepared by the photoetching method or the ink-jet printing method has some problems, such as low light-emitting efficiency, poor stability, poor repeatability, longer processing time and the like. Therefore, the performance of the existing preparation process and the quantum dot light emitting layer prepared by the existing preparation process needs to be further improved.
The embodiment of the application provides a display panel and a preparation method of the display panel, so that the preparation process of the display panel is effectively improved, and meanwhile, the luminous performance and quality of a quantum dot luminous film layer in the display panel are effectively improved.
As shown in fig. 1, fig. 1 is a schematic view of a process flow of a preparation process of a quantum dot light-emitting layer provided in an embodiment of the present application. The preparation process in the embodiment of the application comprises the following steps:
s100: providing a substrate base plate;
s101: dispensing glue on the periphery of the substrate base plate to form at least one circle of peripheral retaining wall structure;
s102: dispensing glue in an area surrounded by the peripheral retaining wall structures, and forming a plurality of blocking grid structures connected with the peripheral retaining wall structures;
s103: coating quantum dot luminescent materials in the blocking lattice structure, removing redundant quantum dot luminescent materials, and applying an electric field to the quantum dot luminescent materials;
s104: and curing the quantum dot luminescent material and forming a quantum dot luminescent film.
Specifically, as shown in fig. 2, fig. 2 is a schematic structural diagram of a display panel corresponding to the preparation method provided in the embodiment of the present application. In the preparation of the display panel in the embodiment of the present application, a substrate 100 is provided first. The substrate 100 in the embodiment of the present application may be an array substrate, and specifically, a thin film transistor device and each interlayer dielectric layer are disposed in the array substrate. The specific structure of the substrate 100 is the same as that of the array substrate prepared in the prior art, and is not described in detail here.
Further, other film layers are continuously prepared on the substrate 100. In the embodiment of the present application, at least one ring of retaining wall structures 103 is disposed in the edge region 102 of the substrate base plate 100.
When the peripheral retaining wall structure 103 is formed, the material is prepared by a dispensing process. Specifically, the peripheral wall structure 103 is disposed at a position 2mm to 10mm close to the edge of the substrate base plate 100. Thereby making the light emitting region 101 inside the base substrate 100 as large as possible and realizing the production of a narrow bezel type display panel.
Specifically, a dispensing device is provided when preparing and forming the retaining wall structure 103. Specifically, the dispensing device includes a dispensing nozzle 105 and a glue storage chamber 104. The glue storage chamber 104 is connected to the dispensing nozzle 105, and the glue in the glue storage chamber 104 is extruded through the dispensing opening of the dispensing nozzle 105 and applied to the substrate 100.
When the retaining wall structure 103 is formed by dispensing, the dispensing nozzle 105 is disposed near the edge region 102 of the substrate base plate 100, and the distance between the dispensing nozzle 105 and the substrate base plate 100 is 10 mm-99 mm. Specifically, when the dispensing opening of the dispensing nozzle 105 is large, the distance between the dispensing nozzle 105 and the substrate 100 may be set to be between 70mm and 99mm, and when the dispensing buckle of the dispensing nozzle 105 is small, the distance between the dispensing nozzle 105 and the substrate 100 may be set to be between 10mm and 70mm, thereby effectively ensuring that the dispensing nozzle 105 can dispense.
When the retaining wall structure 103 is formed by dispensing, the dispensing moving speed of the dispensing device is controlled, specifically, in order to ensure the performance of the retaining wall structure 103 formed by dispensing, the moving speed of the dispensing nozzle 105 is controlled between 50mm/s and 80mm/s, and the dispensing direction of the dispensing nozzle 105 is perpendicular to the substrate, so as to ensure that the glue in the dispensing nozzle 105 can be uniformly coated on the substrate 100, thereby ensuring the performance of the formed retaining wall structure 103.
In the dispensing process, the moving speed of the dispensing nozzle 105 in the length or width direction of the substrate 100 can be set to the same moving speed, for example, the dispensing nozzle 105 moves forward at a speed of 70mm/s and dispenses on the surface of the substrate 100, and meanwhile, in order to ensure the smooth outflow of the glue during the dispensing process, in the embodiment of the present application, the input air pressure is provided to the glue storage chamber, specifically, the air pressure value of the air pressure can be 0.5kg/cm2～10kg/cm2Thereby effectively ensuring the dripping and coating of the colloid. When the dispensing nozzle 105 moves to the positions corresponding to the four corners of the substrate 100, the moving speed of the dispensing nozzle 105 is reduced, and preferably, the moving speed of the dispensing nozzle 105 in the region is set to 50mm/s, so as to effectively ensure that the formed peripheral retaining wall structure 103 has better performance or quality in the region corresponding to the four corners of the substrate 100.
Further, in order to further ensure the performance of the formed retaining wall structure 103, it is necessary to process the colloid stored in the colloid storage chamber 104 during the dispensing process. Specifically, the colloid in the colloid storage chamber 104 is heated to make the colloid have a certain fluidity. In the embodiment of the application, the colloid is heated at the temperature of 10 ℃ -80 ℃, when the colloid is heated, the colloid can be directly heated by the resistance wires and other devices arranged in the colloid storage chamber 104, and the colloid in different areas in the colloid storage chamber 104 is uniformly heated in the heating process. Meanwhile, the heating time of the colloid storage chamber 104 is controlled, in the embodiment of the present invention, the heating time may be 20min to 30min, and the specific heating time may be set according to the amount of the contained colloid.
During the heating process, the viscosity of the colloid is kept between 2500 MPa.s and 3560 MPa.s, thereby ensuring that the colloid can be better dripped on the substrate 100 and is adhered with the surface of the substrate 100. In the embodiment of the present application, the colloid may be a photo-curable material, or a thermosetting material, an inorganic etchable material, and the like, and preferably may be a UV photo-curable material, a thermosetting resin, or the like.
Further, after the peripheral retaining wall structure 103 is set, the dispensing process is continued in the region surrounded by the peripheral retaining wall structure 103. As shown in fig. 3, fig. 3 is a schematic plan view of a barrier lattice structure provided in the embodiment of the present application.
Specifically, after the peripheral retaining wall structure 103 is set, the dispensing device is moved to continue dispensing in the internal area. When dispensing is performed on the inside of the peripheral barrier wall structure 103, the process parameters are the same as the dispensing process parameters. And will not be described in detail herein.
After dispensing, a plurality of adjacent barrier cell structures 202 are formed in the peripheral barrier wall structure 103, and the light-emitting area is divided into a plurality of sub-areas 201 by the plurality of barrier cell structures 202. In the embodiment of the present application, the sub-region 201 and the retaining wall structure 103 are illustrated as an "open-top" structure, and preferably, the sub-region 201 and the retaining wall structure 103 formed by the barrier lattice structure 202 may also have other shapes, such as an oval shape, a ring shape, and other closed figures.
The barrier lattice structure 202 is connected to the peripheral wall structure 103, and the barrier lattice structure 202 is formed to divide the light-emitting region into a plurality of sub-regions 201. In the embodiments of the present application, the formed barrier lattice structure is illustrated by taking an array of 3 × 2 as an example. The size of the sub-region 201 surrounded by each blocking lattice structure 202 can be set to be the same size, so that the consistency of each region is ensured, or the corresponding blocking lattice structures 202 in the same column are set to be the same, so that the adjacent blocking lattice structures 202 can be ensured to have certain symmetry, and the performance of the finally formed display panel is ensured to be more stable.
After the dispensing is completed, the peripheral retaining wall structure 103 and the internal barrier grid structures 202 formed by the dispensing process are cured and formed. In curing, the above structure may be heated or cured by light irradiation, and finally the structure set in the embodiment of the present application is formed.
Further, in the embodiment of the present application, when the barrier rib structures 202 and the peripheral rib structures 103 are disposed, the height of the peripheral rib structures 103 is greater than the height of the barrier rib structures 202, so that when the quantum dot material is dispensed in the sub-regions 201 formed by the barrier rib structures 202, the material can be effectively prevented from overflowing to the outside of the substrate 100, and further the preparation of the display panel is affected.
Preferably, the height of the barrier structure 202 formed by dispensing may be between 0.5um and 100um, and the height of the peripheral wall structure 103 may be set to be 3mm to 10mm, and it is ensured that the height of the peripheral wall structure 103 is greater than the height of the internal barrier structure 202.
After the barrier structures and the barrier grid structures in the display panel are arranged, the quantum dot light-emitting material 204 is coated on the substrate 100. When the quantum dot luminescent material 204 is coated, the quantum dot luminescent material 204 is uniformly coated in each of the sub-regions 201, and the whole region is filled. Due to the fact that a certain external influence exists in the coating process, after the coating is finished, the quantum dot luminescent material 204 overflowing or exceeding the height of the retaining wall structure can be scraped through the scraper, and the performance of the prepared film layer is guaranteed.
When different sub-regions 201 are coated, one sub-region 201 may be completely coated, and then other sub-regions 201 are continuously coated, or the whole sub-region may be coated with the quantum dot luminescent material 204.
In the embodiment of the present application, the quantum dots in the quantum dot luminescent material 204 may be composed of elements in corresponding groups IV, II-VI, IV-VI or III-V of the periodic table. Specifically, it may be made of IIIA-VA (InP, GaAs, etc.) or IIB-VIA (CdSe, ZnS, etc.). Meanwhile, the ligand of the quantum dot light emitting material 204 may include one of a propylene glycol derivative, a thiol compound, a thiocarboxylic acid compound, and a compound including an ester group and a thiol group; solvents used in the preparation of the ligands include: PGMEA, alcohols (e.g., ethanol), water, ethers (e.g., diethyl ether), esters (e.g., ethyl acetate), alkanes (e.g., n-octane), and the like. And the concentration of the prepared quantum dot luminescent material 204 is between 10mg/ml and 350 mg/ml.
After the quantum dot luminescent material 204 is coated, the quantum dot luminescent material 204 is further processed. As shown in fig. 3, fig. 4 is a schematic view of a processing process of the quantum dot luminescent material according to the embodiment of the present application. An electrode may be disposed on each of two sides of the substrate 100, or the electrodes inside the substrate 100 may be directly used as the electrodes and connected to form a circuit structure, and the disposed electrodes may be parallel electrode pads. When the electrodes are provided, the electrodes may be provided at the positions corresponding to the two long sides of the base substrate 100, or at the positions corresponding to the two opposite short sides.
And after the voltage V is introduced, a stable electric field or magnetic field can be formed between the two electrodes, and the electric field or magnetic field corresponding to the electric field or magnetic field penetrates through the quantum dot luminescent material 204 arranged in the display area. The charged quantum dot luminescent material 204 moves in a specific direction under the action of an electric field or a magnetic field, and is selectively deposited under the action of a specific electrode. In the embodiment of the present application, since the field intensities of the quantum dot luminescent material 204 are the same in different regions, the quantum dots in the quantum dot luminescent material 204 move uniformly, so that the uniform distribution of the quantum dots is ensured, and the uniformity of the height of the liquid level of the quantum dot luminescent material 204 is effectively ensured.
Because in the embodiment of the present application, the peripheral retaining wall structure 103 and the barrier structure 202 are disposed in the display region, the quantum dot light-emitting material 204 does not overflow, and because the applied field strengths in the regions are the same, after the electric field application is completed, the consistency of the quantum dot light-emitting material 204 in different sub-regions 201 is also better, thereby ensuring the stability of the performance of the quantum dot light-emitting film layer formed by the subsequent preparation.
In the embodiment of the application, when the electric field is applied to the quantum dot light-emitting material, the intensity of the applied electric field is 5 x105V/m-4*107V/m is between. Specifically, when the prepared display panel is a large-sized display panel, since the area of the display panel is large, the applied field strength may be 4 × 107V/m, and when the area of the prepared display panel is small, the applied field strength may be: 5*105V/m～5x106V/m, and the time of the applied electric field is controlled between 10s and 360s in the embodiment of the application, so that the quantum dot luminescent material can completely flow. Therefore, the quantum dot light-emitting layers in different areas are guaranteed to be subjected to the same electric field force, the quantum dots can be guaranteed to be uniformly distributed under the action of the electric field, the light-emitting performance of the prepared quantum dot light-emitting layers is further guaranteed, and finally the quantum dot light-emitting layers are solidified into films.
In the embodiment of the application, when applying the electric field to the quantum dot luminescent material of coating, the quantum dot luminescent material takes place to remove and electrophoretic deposition under the effect of electric field, because the border region at the substrate base plate is provided with peripheral barricade structure, is provided with a plurality of check structures that block simultaneously in luminous regional, consequently, the quantum dot luminescent material is after electrophoretic deposition is accomplished, distribution that can be even is in the different regions of substrate base plate to the uniformity of the film of guaranteeing to obtain is better. Meanwhile, after the quantum dot light-emitting material layer in the embodiment of the application is prepared, other film layers, such as a packaging layer, a touch layer and the like, are continuously prepared on the quantum dot light-emitting layer, and when the film layers are prepared, the film layers can be prepared through a corresponding photolithography process, a printing process, a molding process and the like, which is not described in detail herein.
Further, an embodiment of the present application further provides a display panel, where a light emitting layer in the display panel is a quantum dot light emitting layer, and when the quantum dot light emitting layer is formed, a peripheral retaining wall structure and a plurality of barrier lattice structures are arranged in the display panel, and the preparation of the quantum dot light emitting layer is completed through the structures. The quantum dot materials in the quantum dot luminescent layer obtained in the embodiment of the application are respectively uniform, and have better consistency and luminescent performance.
The display panel and the method for manufacturing the display panel provided by the embodiment of the invention are described in detail, a specific example is applied to illustrate the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the technical scheme and the core idea of the invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation method of a display panel is characterized by comprising the following steps:
providing a substrate base plate;
dispensing glue on the periphery of the substrate base plate to form at least one circle of peripheral retaining wall structure;
dispensing glue in an area surrounded by the peripheral retaining wall structures, and forming a plurality of blocking grid structures connected with the peripheral retaining wall structures;
coating quantum dot luminescent materials in the blocking lattice structure, removing redundant quantum dot luminescent materials, and applying an electric field to the quantum dot luminescent materials;
and curing the quantum dot luminescent material and forming a quantum dot luminescent film.
2. The method for manufacturing a display panel according to claim 1, wherein the step of forming the peripheral wall structure by dispensing further comprises:
providing a dispensing nozzle, wherein the glue discharging direction of the dispensing nozzle is vertical to the substrate base plate;
placing the substrate base plate below the glue dispensing nozzle, and heating glue in the storage chamber;
providing input air pressure to the storage chamber and enabling the glue to be coated on the substrate base plate.
3. The method for manufacturing a display panel according to claim 2, wherein the heating temperature is 10 ℃ to 80 ℃ and the heating time is 20min to 30min when the glue is heated.
4. The method for manufacturing a display panel according to claim 2, wherein a distance between the dispensing nozzle and the substrate base plate is 10mm to 99 mm.
5. The method for manufacturing a display panel according to claim 2, wherein the input air pressure has an air pressure value of 0.5kg/cm2～10kg/cm2。
6. The method of claim 2, wherein the glue has a viscosity of 2500 MPa-s-3560 MPa-s, and the moving speed of the glue nozzle during the glue dispensing process is 50mm/s-80 mm/s.
7. The method of claim 1, wherein when an electric field is applied to the QDs, the intensity of the electric field is 5 x105V/m-4*107V/m and the application time of the electric field is between 10s and 360 s.
8. The method of claim 1, wherein the barrier rib structures are symmetrically distributed with respect to a center line of the substrate when the barrier rib structures are formed.
9. A display panel, comprising:
a substrate base plate;
a quantum dot light emitting layer disposed on the substrate base plate; and the number of the first and second groups,
an encapsulation layer disposed on the quantum dot light emitting layer;
the display panel further comprises a peripheral retaining wall structure and a blocking grid structure, wherein the peripheral retaining wall structure is arranged at the periphery of the quantum dot light-emitting layer, the blocking grid structure is arranged in the quantum dot light-emitting layer and divides the quantum dot light-emitting layer into a plurality of areas, and the quantum dot light-emitting layer is prepared by the preparation method in claims 1-8.
10. The display panel according to claim 9, wherein the height of the peripheral wall structures is greater than the height of the barrier rib structures.
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