CN112951103B - Micro-LED manufacturing method for improving sub-pixel light emitting balance - Google Patents

Micro-LED manufacturing method for improving sub-pixel light emitting balance Download PDF

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CN112951103B
CN112951103B CN202110115072.0A CN202110115072A CN112951103B CN 112951103 B CN112951103 B CN 112951103B CN 202110115072 A CN202110115072 A CN 202110115072A CN 112951103 B CN112951103 B CN 112951103B
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sub
pixel
pixels
array substrate
light sources
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CN112951103A (en
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张永爱
缪志辉
周雄图
吴朝兴
郭太良
林坚普
林志贤
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Fuzhou University
Mindu Innovation Laboratory
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Fuzhou University
Mindu Innovation Laboratory
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/7005Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

The invention relates to a Micro-LED manufacturing method for improving sub-pixel luminescence balance, which comprises the following steps: coating photoresist on the light receiving surface of the array substrate; adjusting the mask plate to enable the light-transmitting area of the mask plate to correspond to each display pixel; maintaining the relative position of the mask and the array substrate unchanged, and exposing different groups of sub-pixels by adopting three groups of light sources with different incidence directions and simultaneously penetrating through the light-transmitting areas of the mask; each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of quantum dot colloid which needs to be filled in the sub-pixels with the color corresponding to the group of light sources; dissolving photoresist on the array substrate for the first time by using a developing solution; and drying the array substrate, and etching the sub-pixels to form three liquid storage tanks with different depths. The method is beneficial to improving the balance of the luminance of the sub-pixels and improving the display effect.

Description

Micro-LED manufacturing method for improving sub-pixel light emitting balance
Technical Field
The invention belongs to the field of displays, and particularly relates to a Micro-LED manufacturing method for improving sub-pixel light-emitting balance.
Background
Micro-LEDs (Micro light emitting diodes) are a new generation of display technology, with higher brightness, better light emitting efficiency, but lower power consumption than existing OLED (organic light emitting diode) technologies. According to the Micro-LED technology, the LED structure is designed to be thin-film, Micro-miniature and arrayed, and the size of the Micro-LED is only about 1-10 mu m. The Micro-LED has the greatest advantages of micron-scale spacing, addressing control and single-point drive luminescence of each pixel (pixel), long service life and wide application range.
Quantum dots QDs are semiconductor nanoparticles composed of group II-VI or III-V elements, typically ranging in size from a few nanometers to tens of nanometers. Due to the existence of quantum confinement effect, the originally continuous energy band of the quantum dot material is changed into a discrete energy level structure, and the quantum dot material can emit visible light after being excited by the outside. The quantum dot material has a smaller full width at half maximum of a light-emitting peak, and the light-emitting color can be adjusted through the size, structure or components of the quantum dot material, so that the color saturation and color gamut can be improved when the quantum dot material is applied to the Micro-LED display field. Due to the characteristics of quantum dot materials, the quantum dot materials are often applied to Micro-LEDs as light-emitting crystal grains.
In a Micro-LED, liquid storage tanks (grooves) with the same size are generally used for encapsulating quantum dots corresponding to red, green and blue colors, but the amount of quantum dot colloid encapsulation corresponding to different colors is different, so that when the liquid storage tanks are encapsulated with glue, the thickness of the encapsulated glue is also different, further the light-emitting luminance of sub-pixels with different colors is unbalanced, and the display effect is poor.
Disclosure of Invention
The invention aims to provide a Micro-LED manufacturing method for improving the light emitting balance of sub-pixels, which is beneficial to improving the light emitting balance of the sub-pixels and improving the display effect.
In order to achieve the purpose, the invention adopts the technical scheme that: a Micro-LED manufacturing method for improving sub-pixel luminescence balance comprises the following steps that a Micro-LED comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel, each sub-pixel comprises a liquid storage tank, sub-point colloid is filled in each liquid storage tank, and an UV-LED is arranged below each liquid storage tank; the method comprises the following steps:
coating photoresist on the light receiving surface of the array substrate; the array substrate comprises display pixels arranged in an array, and each display pixel comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel;
adjusting a mask plate to enable a light-transmitting area of the mask plate to correspond to each display pixel;
maintaining the relative position of the mask and the array substrate unchanged, and exposing different groups of sub-pixels by adopting three groups of light sources with different incidence directions and simultaneously penetrating through the light-transmitting areas of the mask; each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of quantum dot colloid which needs to be filled in the sub-pixels with the color corresponding to the group of light sources;
dissolving photoresist on the array substrate for a first time by using a developing solution;
and drying the array substrate, and etching the sub-pixels to form three liquid storage tanks with different depths.
Further, the method further comprises:
obtaining the distance between the mask and the array substrate according to the incidence directions of the three groups of light sources, the exposure widths of the sub-pixels and the gaps between two adjacent sub-pixels in the same display pixel, wherein the distance d between the mask and the array substrate meets the condition that d is (p + q) x cot theta1The relationship of | is;
wherein p is the exposure width of the sub-pixel, q is the gap between two adjacent sub-pixels in the same display pixel, and theta1Is a first incident angle, θ2Is the second angle of incidence, θ3At a third incident angle, the first incident angle θ1The second incident angle theta2And the third incident angle theta3Included angles between the incident directions of the three groups of light sources and the normal of the array substrate respectively and theta2=-θ1,θ3=0。
Further, the method further comprises:
controlling the mask plate to keep the distance d between the mask plate and the array substrate unchanged;
adjusting the first incident angle theta1And the second incident angle theta2Three sets of the light sources are exposed to different sets of sub-pixels.
Further, the method further comprises:
controlling the light source to make the first incident angle theta1And the second incident angle theta2Keeping the same;
and adjusting the mask plate, and changing the distance d between the mask plate and the array substrate to expose the sub-pixels of different groups by the three groups of light sources.
Further, the three sub-pixels included in the display pixel are rectangles with equal size, and the sub-pixels and the light-transmitting area are the same in size.
Furthermore, a plurality of display pixels form a column of pixel groups, the column of pixel groups are divided into a red sub-pixel group, a green sub-pixel group and a blue sub-pixel group, and the red sub-pixel group, the green sub-pixel group, the blue sub-pixel group and the light-transmitting area are rectangles with equal width.
Further, the method further comprises: and adding quantum dot colloid with the volume corresponding to the depth of the liquid storage tank into the liquid storage tank.
Further, the method further comprises: and after the quantum dot colloid is added, sealing the liquid storage tank to form a sealing layer with consistent thickness.
Further, the photoresist is a positive photoresist.
Compared with the prior art, the invention has the following beneficial effects: 1. the invention adjusts the mask plate to enable the light-transmitting area of the mask plate to correspond to each display pixel. This ensures that three sub-pixels in a display pixel are exposed at the same time. 2. The invention maintains the relative position of the mask plate and the array substrate unchanged, and adopts three groups of light sources with different incidence directions to simultaneously expose different groups of sub-pixels through the light-transmitting areas of the mask plate. The invention can complete the exposure of all sub-pixels without contraposition by maintaining the relative positions of the mask and the array substrate, thereby avoiding incomplete exposure caused by contraposition errors. 3. Each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot glue body to be filled with the sub-pixels with the color corresponding to the group of light sources. The photoresist has different solubility in the developing solution due to different illumination intensity and illumination time, and the characteristics can ensure that the depths formed by the liquid storage tanks corresponding to different groups of light sources during etching are different. In summary, the three sub-pixels are exposed by three groups of light sources with different illumination intensities and illumination times at the same time, and then the three sub-pixels are developed and etched to form three liquid storage tanks with different depths, so that the liquid storage tanks of the sub-pixels with different colors can package quantum dot colloids with corresponding volumes, the uniform sealing thickness of each liquid storage tank can be ensured, the balance of the luminance of the sub-pixels is improved, and the display effect is improved.
Drawings
Fig. 1 is a schematic flow chart of a method implementation of the embodiment of the present invention.
FIG. 2 is a schematic structural diagram of a Micro-LED in an embodiment of the present invention.
Fig. 3 is a schematic diagram of an exposure light path of a first specific case in the embodiment of the present invention.
Fig. 4 is a schematic diagram of an exposure light path of a second specific case in the embodiment of the present invention.
FIG. 5 is a schematic diagram of a relationship between a sub-pixel and a transparent region according to an embodiment of the present invention.
FIG. 6 is a schematic diagram illustrating a relationship between a display pixel group and a transparent region according to an embodiment of the present invention.
FIG. 7 is a schematic diagram of a prior art Micro-LED structure.
Detailed Description
The invention discloses a Micro-LED manufacturing method for improving sub-pixel luminescence balance, and a person skilled in the art can appropriately improve technical details to realize the Micro-LED with reference to the content. It is expressly intended that all such similar substitutes and modifications which would be obvious to one skilled in the art are deemed to be included in the invention. While the methods and applications of this invention have been described in terms of preferred embodiments, it will be apparent to those of ordinary skill in the art that variations and modifications in the methods and applications described herein, as well as other suitable variations and combinations, may be made to implement and use the techniques of this invention without departing from the spirit and scope of the invention.
The quantum dots corresponding to the sub-pixels with different colors have different absorbed energies for generating light with the same brightness, so that quantum dot colloids with different shapes are required to be adopted for enabling the sub-pixels with different colors to emit light uniformly. However, the size of each liquid storage tank of the Micro-LED array substrate is generally consistent, which makes the thickness of the liquid storage tanks of the sub-pixels with different colors inconsistent when being sealed as shown in fig. 7. In fig. 7, 701 is a sealant layer, 702 is a liquid storage tank, and 703 is a UV-LED. The different sealing glue thickness leads to different brightness of quantum dots after the quantum dots emit light through the sealing glue layer, so that the luminance of the sub-pixels with different colors is not balanced, and the display effect is poor.
In view of this, as shown in fig. 1 to 6, an embodiment of the present invention provides a method for manufacturing a Micro-LED for improving sub-pixel light emission balance, where the Micro-LED includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel, each sub-pixel includes a liquid storage tank, a UV-LED is disposed below each liquid storage tank, and each liquid storage tank is filled with a quantum dot colloid. As shown in fig. 1, the method includes:
step S101: and coating photoresist on the light receiving surface of the array substrate.
The array substrate comprises display pixels arranged in an array mode, and each display pixel comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel.
It should be noted that the color presented by each sub-pixel is determined by the filled quantum dots. The quantum dots can emit colored light when being stimulated by light or electricity, the color of the light is determined by the composition material and the size and the shape of the quantum dots, the larger the general particle is, the longer the particle can absorb, and the smaller the particle is, the shorter the particle can absorb. The quantum dots with the size of 8 nanometers can absorb red of long wave and show blue, and the quantum dots with the size of 2 nanometers can absorb blue of short wave and show red. This property enables the quantum dots to change the color of light emitted by the light source. The quantum dots corresponding to the sub-pixels of different colors are also different in size.
Optionally, the photoresist is a positive photoresist.
It is noted that a photoresist is an organic compound whose solubility in a developing solution changes after exposure to ultraviolet light. A positive photoresist is a type of photoresist in which, after exposure, exposed portions are soluble in a developing solution and unexposed portions are insoluble. The solubility of the positive photoresist adopted by the embodiment of the invention in the developing solution is improved along with the increase of the illumination intensity and the illumination time.
Step S102: and adjusting the mask plate to enable the light-transmitting area of the mask plate to correspond to each display pixel.
The mask includes a light-transmitting region and a non-light-transmitting region. The light-transmitting area is used for exposing each sub-pixel in the display pixel through the light source, and the non-light-transmitting area is used for shielding the light source, so that the photoresist at other positions on the array substrate is prevented from being exposed and subsequently dissolved in the developing solution. The purpose of enabling the light-transmitting area of the mask plate to correspond to each display pixel is to enable the light source to expose three sub-pixels with different colors at the same time, and production efficiency is improved.
Step S103: and maintaining the relative position of the mask and the array substrate unchanged, and exposing different groups of sub-pixels by adopting three groups of light sources with different incidence directions and simultaneously penetrating through the light transmitting areas of the mask.
It should be noted that, the relative position between the mask and the array substrate is maintained unchanged, so that the problem that the sub-pixel part region is repeatedly exposed or not exposed due to the alignment error of exposing the sub-pixels with different colors by moving the mask can be solved. And exposing the sub-pixels of different groups by adopting three groups of light sources with different incidence directions to simultaneously penetrate through the light transmission area of the mask. Therefore, the exposure of all the sub-pixels can be completed by only one-time irradiation, so that the exposure efficiency is improved, and the productivity is improved.
Each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum glue colloid to be filled in the sub-pixels with the color corresponding to the group of light sources.
It should be noted that, because the quantum dots of the sub-pixels with different colors are required to produce the same brightness under the irradiation of the UV-LED with the same power, the quantum dots need to be different, that is, the quantum dots have different volumes. Therefore, under the condition that the volumes of the quantum dot colloids are different, the sealant layers of the sub-pixels with different colors are required to be the same, and the depths of the liquid storage tanks for loading the quantum dot colloids are required to be different. The solubility of the photoresist adopted by the embodiment of the invention in the developing solution is increased along with the increase of the illumination intensity and the illumination time, and the photoresist can be exposed by utilizing light sources with different illumination time and illumination intensity according to the characteristic, so that liquid storage tanks with different depths are etched. In summary, the invention determines how deep the liquid storage tank is used according to the volume of the quantum dot colloid corresponding to the sub-pixels with different colors, and then determines the irradiation intensity and the irradiation time of the light source according to the depth of the liquid storage tank.
Optionally, in a specific embodiment, the three groups of light sources with different incident directions respectively include: the first light source exposes the red sub-pixel, the second light source exposes the green sub-pixel, and the third light source exposes the blue sub-pixel.
Wherein, under the same illumination time of the first light source, the second light source and the third light source, the illumination intensity is as follows: first light source < second light source < third light source.
Under the condition that the illumination intensity of the first light source, the second light source and the third light source is the same, the illumination time is as follows: first light source < second light source < third light source.
Under the condition that the illumination time and the illumination intensity are different, after the illumination of three groups of light sources, the solubility of the photoresist on each color sub-pixel needs to be ensured: red subpixel < green subpixel < blue subpixel.
In general, the quantum dot colloids corresponding to the red, green and blue subpixels generate light with the same brightness, and the required volume of the quantum dot colloid is as follows: red subpixel < green subpixel < blue subpixel.
Step S104: and dissolving the photoresist on the array substrate for the first time by using the developing solution.
It should be noted that, since the present invention uses a positive photoresist, only the exposed photoresist can be dissolved in the developer, and the solubility of the photoresist increases with the increase of the illumination time and the illumination intensity. After the same time of dissolution, the depths of the grooves formed on the sub-pixels with different colors are different, and the depths of the liquid storage tanks formed by etching are also different during the subsequent etching.
Step S105: and drying the array substrate, and etching the sub-pixels to form three liquid storage tanks with different depths.
It should be noted that the array substrate is dried after the development to etch the substrate. Since the etching is divided into dry etching and wet etching, there is a possibility that liquid material may be used for etching, and if not dried, the etching material is easily contaminated.
Optionally, the method further includes: and a UV-LED is arranged at the bottom of the liquid storage tank.
Optionally, the method further includes: and adding quantum dot colloid with the volume corresponding to the depth of the liquid storage tank into the liquid storage tank.
Optionally, the method further includes: and sealing the liquid storage tank to form a sealing glue layer with consistent thickness.
In a specific embodiment, as shown in fig. 2, 201 is an encapsulant layer, 202 is a reservoir for red sub-pixels, 203 is a reservoir for green sub-pixels, 204 is a reservoir for blue sub-pixels, 205 is a UV-LED, and 206 is an array substrate. The thicknesses of the sealant layers 201 are the same.
Optionally, the method further includes:
obtaining the distance between the mask and the array substrate according to the three groups of incidence directions of the light source, the exposure width of the sub-pixels and the gap between two adjacent sub-pixels in the same display pixel, wherein the distance d between the mask and the array substrate satisfies d ═ p + q × | cot theta1The relationship of | is;
wherein p is the exposure width of the sub-pixel, q is the gap between two adjacent sub-pixels in the same display pixel, and θ1Is a first incident angle, θ2Is the second angle of incidence, θ3At the third incident angle, the first incident angle theta1A second incident angle theta2And a third incident angle theta3Included angles between the incident directions of the three groups of light sources and the normal of the array substrate, and theta2=-θ1,θ3=0。
It should be noted that the exposure width of each sub-pixel is equal, and the exposure width is the projection length of the sub-pixel on the front viewing surface of the array substrate. The front view surface of the array substrate is a surface vertical to the central line of the middle sub-pixel of the display pixel. Fig. 3 and 4 are optical path diagrams of the front view plane of the array substrate. The gap between two adjacent sub-pixels in the same display pixel may be an electrode. The mask plate and the array substrate keep a certain distance to ensure that three groups of light sources in different directions can expose three sub-pixels with different colors at the same time.
Optionally, in a specific embodiment, when a gap between two adjacent sub-pixels in the same display pixel is 0, that is, q is 0, optical paths during exposure are as shown in fig. 3, where 301 is a mask and 302 is three sub-pixels of the same display pixel. The distance d between the mask and the array substrate, the exposure width p of the sub-pixel, the gap q between two adjacent sub-pixels in the same display pixel, and the first incident angle theta1A second incident angle theta2And a third incident angle theta3Having d ═ pxi cot theta1The relation of | is given.
Optionally, in a specific embodiment, when a gap between two adjacent sub-pixels in the same display pixel is greater than 0, that is, q is greater than 0, light paths during exposure are as shown in fig. 4, where 401 is a mask and 402 is three sub-pixels of the same display pixel. The distance d between the mask and the array substrate, the exposure width p of the sub-pixel, the gap q between two adjacent sub-pixels in the same display pixel, and the first incident angle theta1A second incident angle theta2And a third incident angle theta3Having d ═ p + q × | otθ1The relation of | is given.
Optionally, the method further includes:
controlling the mask plate to keep the distance d between the mask plate and the array substrate unchanged;
adjusting the first incident angle theta1And a second incident angle theta2Three sets of light sources are used to expose different sets of sub-pixels.
It should be noted that the first incident angle θ is adjusted1And a second incident angle theta2The three groups of light sources are used for exposing the sub-pixels of different groups, and the phenomenon that exposure effect is poor due to the fact that the light-transmitting area cannot correspond to each display pixel as a result of moving the mask module is avoided.
Optionally, the method further includes:
controlling the light source to make the first incident angle theta1And a second incident angle theta2Keeping the original shape;
and adjusting the mask plate, and changing the distance d between the mask plate and the array substrate to expose the sub-pixels of different groups by the three groups of light sources.
It should be noted that, when the array substrate is loaded, the mask plate needs to be moved, and at that time, the mask plate is simultaneously adjusted, and the distance d between the mask plate and the array substrate is changed, so that the three groups of light sources expose different groups of sub-pixels. This may effectively save total manufacturing time.
Optionally, three sub-pixels included in the display pixel are rectangles with equal size, and the size of the sub-pixels is the same as that of the light-transmitting area.
As shown in fig. 5, the display pixel 501 includes three sub-pixels, and the light-transmitting region is a rectangle equal to the sub-pixels. The gaps between the sub-pixels are not shown in fig. 5, and do not limit the present invention.
Optionally, the plurality of display pixels form a column of pixel groups, the column of pixel groups include a red sub-pixel group, a green sub-pixel group, and a blue sub-pixel group, and the red sub-pixel group, the green sub-pixel group, the blue sub-pixel group, and the light-transmitting region are rectangles with equal widths.
As shown in fig. 6, a plurality of display pixels form a column of pixel groups 601, where the pixel groups 601 include a red sub-pixel group, a green sub-pixel group, and a blue sub-pixel group. And the red sub-pixel group, the green sub-pixel group, the blue sub-pixel group and the light-transmitting region 602 are rectangles with equal width. In fig. 6, the display pixels and the gaps between the display pixels are not shown, and the gaps between adjacent sub-pixels in the same display pixel are not shown, which does not limit the present invention.
The invention adjusts the mask plate to enable the light-transmitting area of the mask plate to correspond to each display pixel. This ensures that three sub-pixels in a display pixel are exposed at the same time. According to the embodiment of the invention, the relative position of the mask and the array substrate is kept unchanged, and three groups of light sources with different incidence directions are adopted to simultaneously expose different groups of sub-pixels through the light-transmitting area of the mask. The embodiment of the invention can complete the exposure of all the sub-pixels without carrying out alignment by maintaining the relative positions of the mask and the array substrate, thereby avoiding incomplete exposure caused by alignment errors. In the embodiment of the invention, each group of light sources corresponds to one group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot adhesive bodies to be filled in the sub-pixels with the colors corresponding to the group of light sources. The photoresist has different solubility in the developing solution due to different illumination intensity and illumination time, and the characteristics can ensure that the depths formed by the liquid storage tanks corresponding to different groups of light sources during etching are different. In summary, the embodiment of the invention exposes the three sub-pixels by adopting three groups of light sources with different illumination intensities and illumination times at the same time, and then develops and etches the three sub-pixels to form three liquid storage tanks with different depths, so that the liquid storage tanks of the sub-pixels with different colors can package quantum dot colloids with corresponding volumes, the sealing thickness of each liquid storage tank can be ensured to be consistent, the light-emitting brightness balance of the sub-pixels is improved, and the display effect is improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (9)

1. A Micro-LED manufacturing method for improving sub-pixel luminescence balance is characterized in that the Micro-LED comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel, each sub-pixel comprises a liquid storage tank, each liquid storage tank is filled with a sub-point colloid, and an UV-LED is arranged below each liquid storage tank; the method comprises the following steps:
coating photoresist on the light receiving surface of the array substrate; the array substrate comprises display pixels arranged in an array, and each display pixel comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel;
adjusting a mask plate to enable a light-transmitting area of the mask plate to correspond to each display pixel;
maintaining the relative position of the mask and the array substrate unchanged, and exposing different groups of sub-pixels by adopting three groups of light sources with different incidence directions and simultaneously penetrating through the light-transmitting areas of the mask; each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of quantum dot colloid which needs to be filled in the sub-pixels with the color corresponding to the group of light sources;
dissolving photoresist on the array substrate for a first time by using a developing solution;
and drying the array substrate, and etching the sub-pixels to form three liquid storage tanks with different depths.
2. The method for manufacturing Micro-LEDs to improve sub-pixel emission balance as claimed in claim 1, further comprising:
obtaining the distance between the mask and the array substrate according to the incidence directions of the three groups of light sources, the exposure widths of the sub-pixels and the gaps between two adjacent sub-pixels in the same display pixel, wherein the distance d between the mask and the array substrate meets the condition that d is (p + q) x cot theta1The relationship of | is;
wherein p is the exposure width of the sub-pixel, q is the gap between two adjacent sub-pixels in the same display pixel, and theta1Is a first incident angle, θ2Is the second angle of incidence, θ3At a third incident angle, the first incident angle θ1The second incident angle theta2And the third incident angle theta3Included angles between the incident directions of the three groups of light sources and the normal of the array substrate respectively and theta2=-θ1,θ3=0。
3. A method of fabricating Micro-LEDs to improve sub-pixel emission uniformity as recited in claim 2, further comprising:
controlling the mask plate to keep the distance d between the mask plate and the array substrate unchanged;
adjusting the first incident angle theta1And the second incident angle theta2Three sets of the light sources are caused to expose different sets of sub-pixels.
4. A method of fabricating Micro-LEDs to improve sub-pixel emission uniformity as recited in claim 2, further comprising:
controlling the light source to make the first incident angle theta1And the second incident angle theta2Keeping the same;
and adjusting the mask plate, and changing the distance d between the mask plate and the array substrate to expose the sub-pixels of different groups by the three groups of light sources.
5. The method as claimed in claim 1, wherein the display pixel comprises three sub-pixels having equal size and rectangular shape, and the sub-pixels and the transmissive regions have the same size.
6. The method as claimed in claim 1, wherein the display pixels form a column of pixel groups, the column of pixel groups are divided into a red sub-pixel group, a green sub-pixel group and a blue sub-pixel group, and the red sub-pixel group, the green sub-pixel group, the blue sub-pixel group and the transmissive region are rectangles of equal width.
7. The method for manufacturing Micro-LEDs to improve sub-pixel emission balance as claimed in claim 1, further comprising: and adding quantum dot colloid with the volume corresponding to the depth of the liquid storage tank into the liquid storage tank.
8. The method for manufacturing Micro-LEDs to improve sub-pixel emission balance as claimed in claim 7, further comprising: and after the quantum dot colloid is added, sealing the liquid storage tank to form a sealing layer with consistent thickness.
9. The method as claimed in claim 1, wherein the photoresist is a positive photoresist.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205211789U (en) * 2015-10-22 2016-05-04 广东昭信光电科技有限公司 White light LED device based on no cadmium quantum dot phosphor powder
CN206271743U (en) * 2016-11-22 2017-06-20 广州视源电子科技股份有限公司 Quantum dot LED modules
CN108091752A (en) * 2017-12-22 2018-05-29 华中科技大学 A kind of white light LEDs and preparation method thereof
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI536083B (en) * 2013-09-11 2016-06-01 友達光電股份有限公司 Liquid crystal panel and liquid crystal display
CN104932136B (en) * 2015-07-01 2018-01-26 合肥鑫晟光电科技有限公司 Color membrane substrates and preparation method thereof, display panel and display device
US10615318B2 (en) * 2018-02-02 2020-04-07 Huizhou China Star Optoelectronics Technology Co., Ltd. Quantum dot LED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205211789U (en) * 2015-10-22 2016-05-04 广东昭信光电科技有限公司 White light LED device based on no cadmium quantum dot phosphor powder
CN206271743U (en) * 2016-11-22 2017-06-20 广州视源电子科技股份有限公司 Quantum dot LED modules
CN108091752A (en) * 2017-12-22 2018-05-29 华中科技大学 A kind of white light LEDs and preparation method thereof
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device

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