CN109755413B - Display panel and preparation method thereof - Google Patents
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- CN109755413B CN109755413B CN201910039676.4A CN201910039676A CN109755413B CN 109755413 B CN109755413 B CN 109755413B CN 201910039676 A CN201910039676 A CN 201910039676A CN 109755413 B CN109755413 B CN 109755413B
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- 239000002096 quantum dot Substances 0.000 claims abstract description 54
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- 230000004888 barrier function Effects 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
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- 229910005540 GaP Inorganic materials 0.000 claims description 3
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- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 claims description 3
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
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Abstract
The invention discloses a display panel and a preparation method thereof, wherein the display panel comprises an array substrate; the color film substrate is arranged opposite to the array substrate; the filling layer is filled between the array substrate and the color film substrate, and quantum dot materials are arranged in the filling layer; and a light emitting diode device is arranged on one surface of the array substrate facing the color film substrate. The display panel and the preparation method thereof have the beneficial effects that the quantum dot material is added in the filling layer, and the integral color gamut of the display panel is improved through the characteristic of higher color saturation of the quantum dots; adopt the three-layer structure among the single-layer structure replacement prior art, saved the process and promoted the output simultaneously.
Description
Technical Field
The invention relates to the field of luminous display, in particular to a display panel and a preparation method thereof.
Background
An Organic Light-Emitting Diode (OLED) is also called an Organic electroluminescent display or an Organic Light-Emitting semiconductor. The organic light emitting diode display technology has the advantages of self-luminescence, wide viewing angle, almost infinite contrast, lower power consumption, extremely high reaction speed and the like.
At present, self-luminous devices such as organic light emitting diodes have the characteristics of self-luminescence, wide viewing angle, long service life, energy conservation, environmental protection, wide color gamut and the like, and the development of the organic light emitting diode display and the illumination industry is rapid at present, so that the organic light emitting diode display and the illumination industry become important display designs.
The main organic light emitting diode products in the world at present are divided into two types: organic light emitting diodes and white organic light emitting diodes. The white organic light emitting diode is mainly applied to a large-sized organic light emitting diode panel, and is advantageous in mass production because a photomask is not required.
The conventional structure of the white organic light emitting diode is shown in fig. 1, which is generally a top-emitting structure, and a filler is added to ensure uniformity of light output to make the thickness of the in-plane cell uniform.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a display panel and a method for manufacturing the same, so as to solve the problems that in the prior art, a three-layer structure is usually required to be manufactured on an array substrate to obtain white light, the manufacturing process is complicated, and the yield is low.
The technical scheme for solving the problems is as follows: the invention provides a display panel, which comprises an array substrate; the color film substrate is arranged opposite to the array substrate; the filling layer is filled between the array substrate and the color film substrate, and quantum dot materials are arranged in the filling layer; and a light emitting diode device is arranged on one surface of the array substrate facing the color film substrate.
Furthermore, the display panel further comprises a barrier pillar, and the barrier pillar is supported between the array substrate and the color film substrate; and the barrier layer covers the light-emitting diode device.
Furthermore, the display panel further comprises a display area, the display area is provided with a plurality of pixel unit areas and non-pixel unit areas surrounding the pixel unit areas, and the filling layer is correspondingly arranged in the pixel unit areas; and the retaining wall structure is arranged between the array substrate and the color film substrate, is positioned in the non-pixel unit area and surrounds the pixel unit area.
Furthermore, in the display area, a black matrix layer and a color resistance layer arranged in the black matrix layer are arranged on one surface, facing the array substrate, of the color film substrate; the position of the black matrix layer corresponds to the retaining wall structure.
Furthermore, the retaining wall structure corresponding to each pixel unit area is formed by surrounding a plurality of sections of walls, a gap is formed between every two adjacent sections of walls, and the width of the gap is between 1um and 50 um.
Furthermore, the retaining wall structure between two adjacent pixel unit areas is provided with an opening or a groove to communicate the two pixel unit areas, and the depth and the width of the opening or the groove are both between 1um and 50 um.
Further, in the filling layer, the quantum dot material comprises a red quantum dot material, a green quantum dot material and a blue quantum dot material; the light emitting diode device is an ultraviolet light emitting diode device; or the quantum dots comprise red quantum dots and green quantum dots; the light emitting diode device is a blue light emitting diode device.
Furthermore, the material of the barrier layer is at least one of inorganic materials such as silicon nitride, silicon carbonitride, silicon oxide, aluminum nitride and the like, and the thickness of the barrier layer is 0.5um to 1 um.
Further, the material of the quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, gallium arsenide, gallium phosphide, gallium arsenide, gallium antimonide, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, arsenic phosphide and aluminum antimonide.
The invention also provides a preparation method of the display panel, which comprises the steps of S1) providing an array substrate and a color film substrate; s2) manufacturing a light emitting diode device on the array substrate; s3) manufacturing a barrier layer on the surface of the light-emitting diode device; s4) manufacturing a black matrix layer and a color resistance layer on the color film substrate; s5) manufacturing a retaining wall structure on the black matrix layer on the color film substrate by utilizing screen printing, transfer printing or coating, exposing and developing processes; s6) coating ultraviolet glue and a filling layer on the color film substrate, wherein quantum dot materials are distributed in the filling layer; s7), assembling the color film substrate and the array substrate in vacuum pressing equipment.
The invention has the advantages that: according to the display panel, the filling layer is added between the color film substrates of the array substrate, so that the thickness of the inner box of the display panel surface is uniform; quantum dot materials are added into the filling layer, and the integral color gamut of the display panel is improved through the characteristic of higher color saturation of the quantum dots; the single-layer structure is adopted to replace a three-layer structure in the prior art, so that the working procedures are saved, and the output is improved; covering the light-emitting diode device with the barrier layer improves the water and oxygen barrier capability of the light-emitting diode device; the retaining wall is added in the non-display area of the color film substrate and the array substrate, so that the light leakage phenomenon of light due to quantum dot scattering can be reduced, water and oxygen can be blocked, the service life of quantum dots is prolonged, and the influence on the aperture opening ratio of the display panel can be reduced; and a gap is reserved on the retaining wall or an opening is formed in the retaining wall so as to enable the filling layer in the pixel region to flow, so that the quantum dots are uniformly distributed in each sub-pixel region. The manufacturing method of the display panel provided by the invention has the advantages that the retaining wall is manufactured on the color film substrate, the filling layer is added, and then the retaining wall and the array substrate are combined, so that the final display panel is obtained more conveniently.
Drawings
The invention is further explained below with reference to the figures and examples.
Fig. 1 is a schematic view of the entire display panel in embodiment 1.
Fig. 2 is a schematic view of a display region in example 1.
Fig. 3 is an overall schematic view of the display panel in embodiment 2.
FIG. 4 is a schematic view of a display region in example 2.
Fig. 5 is a schematic view of a light emitting diode device formed on an array substrate in example 3.
Fig. 6 is a schematic view of a barrier layer formed on the array substrate in example 3.
FIG. 7 is a schematic view showing the formation of a black matrix layer and a color resist layer by the color film substrate in example 3.
FIG. 8 is a schematic view of a retaining wall formed by the color film substrate in example 3.
Fig. 9 is a schematic view of the color film substrate added with a filling layer containing quantum dots in example 3.
In the drawings
10 a display panel; 110 an array substrate;
120 color film substrate; 130 a filling layer;
140 a light emitting diode device; 150 retaining wall structures;
160 a stop post; 121 a display area;
1211 pixel cell area; 1212 a non-pixel cell area;
122 a black matrix layer; 123 color resist layer;
131 quantum dot material; 141 barrier layer;
151 wall body; 152 a void;
153 holes are formed;
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "top", "bottom", etc., refer to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Example 1
As shown in fig. 1, in this embodiment, the display panel 10 of the invention includes an array substrate 110, a color film substrate 120, a filling layer 130, a light emitting diode device 140, a retaining wall structure 150, and a barrier pillar 160.
The array substrate 110 is disposed opposite to the color filter substrate 120, and a light emitting diode device 140 for generating a light source is disposed on one surface of the array substrate 110 opposite to the color filter substrate 120.
The light emitting diode device 140 is covered with a barrier layer 141, the barrier layer 141 is made of at least one of inorganic materials such as silicon nitride, silicon carbonitride, silicon oxide, aluminum oxide, and aluminum nitride, and the thickness of the barrier layer is 0.5um to 1 um. The blocking layer 141 is used to improve the ability of the light emitting diode device 140 to block water and oxygen.
The barrier pillars 160 are supported between the array substrate 110 and the color filter substrate 120, and are used for blocking water and oxygen, and no additional packaging layer is needed to ensure the service life of the quantum dot material 131.
As shown in fig. 2, the color filter substrate 120 further includes a display area 121, the display area 121 has a plurality of pixel unit regions 1211 and a non-pixel unit region 1212 surrounding the pixel unit regions 1211, in the display area 121, a black matrix layer 122 and a color resistance layer 123 disposed in the black matrix layer 122 are disposed on a surface of the color filter substrate 120 facing the array substrate 110, and the color resistance layer 123 includes a red color resistance, a green color resistance, and a blue color resistance.
The filling layer 130 is filled between the array substrate 110 and the color film substrate 120 so as to make the in-plane box thickness uniform, and meanwhile, in order to improve the color gamut degree of the light emitting surface of the display panel 10, in this embodiment, the quantum dot material 131 is added in the filling layer 130, the radius of a conventionally used filler nozzle is about 0.3mm, the size of a quantum dot is generally below 10nm, the quantum dot material 131 can be ejected, and the quantum dot material 131 is added in the filling layer 130, so that the overall color gamut of the display panel 10 can be greatly improved due to the higher color saturation of the quantum dot.
Specifically, in this embodiment, the quantum dot material 131 includes a red quantum dot material, a green quantum dot material, and a blue quantum dot material, and the materials include at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, gallium arsenide, gallium phosphide, gallium arsenide, gallium antimonide, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, arsenic phosphide, and aluminum antimonide.
The light emitting diode device 140 is an ultraviolet light emitting diode device, and at this time, ultraviolet light emitted by the light emitting diode device 140 is scattered by the quantum dot material 131 to form final white light.
However, in order to solve the problem that the light leakage phenomenon occurs in the non-pixel unit region 1212 adjacent to the light-emitting diode device 140 due to the scattering of the ultraviolet light emitted by the light-emitting diode device 140 through the quantum dot material 131, in this embodiment, the retaining wall structure 150 of the present invention is disposed between the array substrate 110 and the color filter substrate 120, the retaining wall 150 is a flat rectangular retaining wall and is located in the non-pixel unit region 1212 and surrounds the pixel unit region 1211, and the projection of the retaining wall structure 150 on the color filter substrate 120 completely falls into the black matrix layer 122, so that the design can reduce the influence on the aperture ratio of the display panel 10.
Since the filling layer 130 is a liquid desiccant, and the quantum dot materials 131 are randomly distributed in the filling layer 130, in order to enable the filling layer 130 to flow in the pixel unit area 1211, in this embodiment, the retaining wall structure 150 of the present invention includes a plurality of walls 151, a gap 152 is formed between adjacent walls 151, the gap 152 is disposed at four corners of each pixel unit area 1211, the width of the wall is smaller than the width of the pixel unit area 1211, the width of the gap 152 is between 1um and 50um, and the general quantum dot size is less than 10nm, so that the gap 152 is completely available for the quantum dot materials 131 to flow therethrough.
Example 2
As shown in fig. 3 and fig. 4, the present embodiment is different from embodiment 1 in that the retaining wall structure 150 is enclosed around the pixel unit area 1211, and the adjacent retaining wall structure 150 has an opening 153, which is semicircular or arc-shaped, and has a depth and a width of 1um to 50um, the opening 153 communicates with the two adjacent pixel unit areas 1211, so that the filling layer 130 in the pixel unit area 1211 flows through the opening 153, and the quantum dot materials 131 in the filling layer 130 can be uniformly distributed in each pixel unit area 1211.
Example 3
The present embodiment has a structure substantially similar to that of embodiment 2, except that the quantum dot material 131 includes a red quantum dot material and a green quantum dot material, the light emitting diode device 140 employs a blue light emitting diode device, and blue light emitted from the light emitting diode device 140 is scattered by the red quantum dot material and the green quantum dot material to form final white light.
In order to better explain the present invention, in this embodiment, the present invention further includes a method for manufacturing a display panel, including:
s1) providing the array substrate 110 and the color film substrate 120;
s2) as shown in fig. 5, fabricating a light emitting diode device 140 on the array substrate 110;
s3) as shown in fig. 6, a barrier layer 141 is formed on the surface of the led device 140, wherein the barrier layer 141 may be made of inorganic materials such as silicon nitride, silicon carbonitride, silicon oxide, aluminum oxide, and aluminum nitride;
s4), as shown in fig. 7, a black matrix layer 122 and a color resist layer 123 are formed on the color filter substrate 120;
s5) as shown in fig. 8, manufacturing a retaining wall structure 150 on the black matrix layer 122 on the color filter substrate 120 by using a screen printing, a transfer printing or a coating, exposing and developing process;
s6) as shown in fig. 9, coating an ultraviolet glue and a filling layer 130 on the color filter substrate 120, where quantum dot materials 131 are distributed in the filling layer 130, and different quantum dot materials 131 are selected according to different light emitting diode devices 140, specifically, if a blue light emitting diode device 140 is used, red and green quantum dot materials 131 are selected, and if a white light emitting diode device 140 is used, red, green, and blue quantum dot materials 131 are selected;
s7), assembling the color film substrate 120 and the array substrate 110 in a vacuum lamination device.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A display panel, comprising
An array substrate;
the color film substrate is arranged opposite to the array substrate;
the filling layer is filled between the array substrate and the color film substrate, and quantum dot materials are arranged in the filling layer;
a light emitting diode device is arranged on one surface of the array substrate facing the color film substrate;
the display area is provided with a plurality of pixel unit areas and non-pixel unit areas surrounding the pixel unit areas, and the filling layers are correspondingly arranged in the pixel unit areas; and
the retaining wall structure is arranged between the array substrate and the color film substrate, is positioned in the non-pixel unit area and surrounds the pixel unit area;
the retaining wall structure corresponding to each pixel unit area is defined by a plurality of sections of walls, a gap is formed between every two adjacent sections of walls, and the width of the gap is between 1 and 50 micrometers; and/or
The retaining wall structure between two adjacent pixel unit areas is provided with an opening or a groove so as to communicate the two pixel unit areas, and the depth and the width of the opening or the groove are both between 1um and 50 um.
2. The display panel according to claim 1, further comprising
The barrier column is supported between the array substrate and the color film substrate;
and the barrier layer covers the light-emitting diode device.
3. The display panel according to claim 1,
in the display area, a black matrix layer and a color resistance layer arranged in the black matrix layer are arranged on one surface, facing the array substrate, of the color film substrate; the position of the black matrix layer corresponds to the retaining wall structure.
4. The display panel according to claim 1, wherein in the filling layer,
the quantum dot material comprises a red quantum dot material, a green quantum dot material and a blue quantum dot material, and the light-emitting diode device is an ultraviolet light-emitting diode device; or
The quantum dots comprise red quantum dots and green quantum dots, and the light-emitting diode device is a blue light-emitting diode device.
5. The display panel according to claim 2,
the material of barrier layer is at least one of silicon nitride, silicon carbonitride, silicon oxide, aluminium nitride, and its thickness is 0.5um ~ 1 um.
6. The display panel according to claim 1,
the material of the quantum dots comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, gallium arsenide, gallium phosphide, gallium arsenide, gallium antimonide, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, arsenic phosphide and aluminum antimonide.
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| CN110085634A (en) * | 2019-04-08 | 2019-08-02 | 深圳市华星光电技术有限公司 | Display panel and preparation method thereof |
| CN112017551B (en) * | 2019-05-30 | 2022-06-03 | 群创光电股份有限公司 | Optical device |
| CN111373555A (en) * | 2019-09-06 | 2020-07-03 | 重庆康佳光电技术研究院有限公司 | LED module and LED array module |
| CN111016478A (en) * | 2019-11-14 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | Method for manufacturing perovskite color conversion film |
| CN112497930B (en) * | 2020-11-25 | 2022-01-25 | 合肥维信诺科技有限公司 | Ink jet printing apparatus and method of operating the same |
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| CN105097878B (en) * | 2015-07-17 | 2018-02-13 | 京东方科技集团股份有限公司 | Organic EL display panel and preparation method, display device |
| US10056533B2 (en) * | 2015-12-02 | 2018-08-21 | Nanosys, Inc. | Quantum dot encapsulation techniques |
| KR102512274B1 (en) * | 2016-08-12 | 2023-03-22 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| KR101797062B1 (en) * | 2017-04-12 | 2017-11-14 | 서경수 | Quantum Dots Optical Films and Devices using the Same |
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