CN113622013A - Preparation method of composite deposition layer of wafer cutting blade - Google Patents

Preparation method of composite deposition layer of wafer cutting blade Download PDF

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Publication number
CN113622013A
CN113622013A CN202111184527.0A CN202111184527A CN113622013A CN 113622013 A CN113622013 A CN 113622013A CN 202111184527 A CN202111184527 A CN 202111184527A CN 113622013 A CN113622013 A CN 113622013A
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deposition
blade
electroplating solution
electroplating
steps
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CN202111184527.0A
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CN113622013B (en
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朱恺华
赵正东
焦旭东
王百强
赵明杰
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Nantong Weiteng Semiconductor Technology Co ltd
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Nantong Weiteng Semiconductor Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/04—Tubes; Rings; Hollow bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Chemically Coating (AREA)

Abstract

The invention discloses a preparation method of a composite deposition layer of a wafer cutting blade, which specifically comprises the following steps: a plurality of annular blades are used as deposition substrates and are arranged on a deposition tool at equal intervals from top to bottom, and the annular blades are divided into deposition surfaces and non-deposition surfaces; the method comprises the following steps of (1) separating two nickel anodes on two sides of an electroplating bath through partition plates, filling electroplating solution between the two partition plates, and rotatably arranging a deposition tool in the electroplating solution, wherein diamond particles are added into the electroplating solution, and a non-deposition surface is covered by a baffle plate and serves as a circuit interface of a cathode; in the electroplating process, the PH, the current density and the rotation frequency of the electroplating solution are controlled, so that diamond particles uniformly grow on the deposition surface, and in the step S2, the deposition tool synchronously carries out vortex stirring on the electroplating solution in the rotation process.

Description

Preparation method of composite deposition layer of wafer cutting blade
The technical field is as follows:
the invention relates to the technical field of production of wafer cutting blades, in particular to a preparation method of a composite deposition layer of a wafer cutting blade.
Background art:
in recent years, with various miniaturized electronic products, especially SIP, IC card and RFID terminal products oriented to mobile communication products, being put to market formally, products with chip thickness below 100um are becoming more and more practical in the market, and with the increasing demand of customers for final products, the importance of wafer processing technology is increasing, at present, when wafers are processed, wafer cutting blades are mainly used for processing and cutting the wafers, the production flow of the wafer cutting blades generally needs to go through the steps of pretreatment, composite deposition, semi-finished product detection, outer circle grinding and the like, wherein the composite deposition is to grow diamond particles on a ring blade, generally an electrodeposition process is adopted, however, in the actual electroplating process, the growth deposition of the diamond particles on the ring blade is random, which results in that the ring blade after diamond growth is uneven in thickness, increasing the difficulty of subsequent processing of the annular blade.
The invention content is as follows:
the present invention is directed to a method for preparing a composite deposition layer for a wafer cutting blade, which solves one or more of the above-mentioned problems of the prior art.
In order to solve the technical problems, the innovation points of the invention are as follows: the method specifically comprises the following steps:
s1, mounting a plurality of annular blades serving as deposition substrates on a deposition tool at equal intervals from top to bottom, wherein the annular blades are divided into deposition surfaces and non-deposition surfaces;
s2, separating two nickel anodes on two sides of the electroplating bath through separators, filling electroplating solution between the two separators, and rotatably arranging a deposition tool in the electroplating solution, wherein diamond particles are added into the electroplating solution, and the non-deposition surface is covered by a baffle and serves as a circuit interface of a cathode;
s3, in the electroplating process, controlling the PH, current density and rotation frequency of the electroplating solution to enable diamond particles to uniformly grow on the deposition surface;
in step S2, the deposition tool simultaneously performs vortex stirring on the plating solution during rotation.
Furthermore, above-mentioned deposit frock is including rotating the bull stick that sets up on the rotating electrical machines and setting up the chassis in the bull stick bottom, and the top detachable of bull stick is connected on the rotating electrical machines, and bull stick from the top down interval distribution has a plurality of screw faces, smooth surface, and annular blade installs on the smooth surface, and baffle threaded connection just is used for pressing from both sides tight solid fixed ring shape blade on the screw face.
Furthermore, an impeller disc is sleeved on the outer side of the base disc, the impeller disc is divided into an outer disc and an inner disc from outside to inside in sequence, a plurality of turbulence blades with upward extension directions are distributed on the inner disc, a plurality of stirring blades with downward extension directions are distributed on the bottom of the outer disc, and the extension directions of the turbulence blades and the stirring blades are parallel to each other.
Furthermore, above-mentioned spoiler blade is the arcwall face of bending, and one of them arcwall face welded fastening of spoiler blade is on the inner disc, and the extending direction of another arcwall face of spoiler blade is towards the bull stick.
Furthermore, the stirring blades can be freely and rotatably arranged at the bottom of the outer disc, and are spiral bodies which are far away from the rotating rod in the inclined direction.
Further, in step S3, the pH of the plating solution is in the range of 3.5 to 4.5, the current density is in the range of 1.5 to 3.5A/dm2, and the rotation frequency is in the range of 20Hz to 30 Hz.
The invention has the beneficial effects that:
1. the invention provides a preparation method of a composite deposition layer of a wafer cutting blade, wherein a non-deposition surface blocks electroplating solution through a baffle to prevent diamond from being deposited on the non-deposition surface, and then, in the process that an annular blade rotates along with a deposition tool, the deposition tool drives the electroplating solution to be stirred in a vortex mode, so that the diamond in the electroplating solution can be favorably diffused around the deposition surface, and the growth uniformity of diamond particles on the deposition surface is improved.
2. The invention provides a preparation method of a composite deposition layer of a wafer cutting blade, which is characterized in that a rotating rod is detached from a rotating motor, an annular blade and a baffle are sleeved on the rotating rod at intervals, wherein the annular blade is positioned at the position of a smooth surface, the smooth surface is polished to reduce the abrasion of the smooth surface to the annular blade and play a role in protecting the annular blade, the baffle is in threaded connection with a threaded surface and plays a role in clamping and fixing the annular blade, and the outward extending position of the baffle is aligned with the non-deposition surface of the annular blade, so that the non-deposition surface is isolated from electroplating solution.
3. The invention provides a preparation method of a composite deposition layer of a wafer cutting blade, and in view of the fact that diamond particles are easy to deposit towards the bottom of electroplating solution in the electroplating solution, the extension direction of a stirring blade is downward, the effect of fully mixing the diamond particles accumulated at the bottom of the electroplating solution into the electroplating solution is achieved, and the subsequent turbulence blades perform vortex type stirring on the electroplating solution, so that the diamond particles mixed in the electroplating solution can be rapidly diffused in the electroplating solution, and the uniformity of growth of the diamond particles on a deposition surface is improved.
Description of the drawings:
FIG. 1 is a side view of a deposition tool of the present invention in a plating bath.
Figure 2 shows a cross-sectional view of the surface of a ring blade according to the invention.
Fig. 3 is a cross-sectional view of the surface of an impeller disc of the present invention.
The specific implementation mode is as follows:
for the purpose of enhancing the understanding of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, which are only used for explaining the present invention and are not to be construed as limiting the scope of the present invention.
Fig. 1 to 2 show an embodiment of the present invention, which specifically includes the following steps:
s1, a plurality of annular blades 1 are used as deposition substrates and are arranged on the deposition tool 2 at equal intervals from top to bottom, and the annular blades 1 are divided into a deposition surface 11 and a non-deposition surface 12;
s2, separating two nickel anodes 3 on two sides of an electroplating bath 4 through separators 31, filling electroplating solution between the two separators 31, and rotatably arranging a deposition tool 2 in the electroplating solution, wherein diamond particles are added into the electroplating solution, and a non-deposition surface 12 is covered by a baffle 5 and is used as a circuit interface of a cathode;
s3, controlling the PH, current density and rotation frequency of the electroplating solution in the electroplating process to enable diamond particles to grow on the deposition surface 11 uniformly;
in step S2, the deposition tool 2 performs vortex stirring of the plating solution during rotation.
In the invention, the non-deposition surface 12 blocks the electroplating solution through the baffle 5 to prevent the diamond from depositing on the non-deposition surface 12, and then, in the rotation process of the annular blade 1 along with the deposition tool 2, the deposition tool 2 drives the electroplating solution to be stirred in a vortex manner, which is beneficial to the diffusion of the diamond in the electroplating solution around the deposition surface 11, thereby improving the growth uniformity of the diamond particles on the deposition surface 11.
In the present invention, as a preferred scheme, the deposition tool 2 includes a rotating rod 21 rotatably disposed on the rotating motor 101 and a base plate 22 disposed at the bottom of the rotating rod 21, the top of the rotating rod 21 is detachably connected to the rotating motor 101, a plurality of threaded surfaces 211 and smooth surfaces 212 are distributed at intervals from top to bottom on the rotating rod 21, the annular blade 1 is mounted on the smooth surfaces 212, and the baffle 5 is in threaded connection with the threaded surfaces 211 and is used for clamping the fixed annular blade 1.
In the invention, when the annular blade 1 is mounted on the deposition tool 2, the rotating rod 21 is firstly detached from the rotating motor 101, the annular blade 1 and the baffle plate 5 are sleeved on the rotating rod 21 at intervals, wherein the annular blade 1 is positioned at the position of the smooth surface 212, the smooth surface 212 is subjected to polishing treatment, the abrasion of the smooth surface 212 to the annular blade 1 is reduced, the annular blade 1 is protected, the baffle plate 5 is in threaded connection with the threaded surface 211 and plays a role of clamping and fixing the annular blade 1, and the outward extending position of the baffle plate 5 is aligned with the non-deposition surface 12 of the annular blade 1, so that the non-deposition surface 12 is isolated from the electroplating solution.
In the present invention, as a preferable scheme, an impeller disk 6 is sleeved on the outer side of the base plate 22, the impeller disk 6 is sequentially divided into an outer disk 61 and an inner disk 62 from outside to inside, a plurality of turbulence blades 621 extending upward are distributed on the inner disk 62, a plurality of stirring blades 611 extending downward are distributed on the bottom of the outer disk 61, and the extension directions of the turbulence blades 621 and the stirring blades 611 are parallel to each other.
In the present invention, since the diamond particles are easily deposited to the bottom of the plating solution in the plating solution, the stirring blade 611 extends downward to sufficiently mix the diamond particles accumulated at the bottom of the plating solution into the plating solution, and the subsequent spoiler blade 621 performs vortex stirring on the plating solution, so that the diamond particles mixed in the plating solution can be rapidly diffused in the plating solution, thereby improving the uniformity of the growth of the diamond particles on the deposition surface 11.
In the present invention, as a preferable scheme, the spoiler blade 621 is a bent arc-shaped surface, one of the arc-shaped surfaces of the spoiler blade 621 is welded and fixed on the inner disc 62, and the extending direction of the other arc-shaped surface of the spoiler blade 621 faces the rotating rod 21.
In the invention, in the rotating process of the spoiler blade 621, the extending direction of the other arc-shaped surface of the spoiler blade 621 faces the rotating rod 21, which is beneficial to the diamond particles in the electroplating solution flowing towards the rotating rod 21, and further beneficial to the growth of the diamond particles on the deposition surface 11,
In the present invention, it is preferable that the stirring blade 611 is rotatably provided at the bottom of the outer disk 61, and the stirring blade 611 is a spiral body inclined away from the rotary shaft 21.
In the present invention, during the rotation of the stirring blade 611, the stirring blade 611 itself is adaptively rotated by the hydraulic pressure of the plating solution, which can scatter diamond particles accumulated at the bottom of the plating solution, and secondly, the stirring blade 611 extends away from the rotating rod 21 in a direction in which the scattered diamond particles are mixed into the entire plating solution.
In the present invention, it is preferable that the pH of the plating solution is in the range of 3.5 to 4.5 and the current density is in the range of 1.5 to 3.5A/dm in step S32The rotation frequency is 20Hz-30 Hz.
It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (6)

1. A preparation method of a composite deposition layer of a wafer cutting blade is characterized by comprising the following steps: the method specifically comprises the following steps:
s1, mounting a plurality of annular blades (1) as deposition substrates on a deposition tool (2) at equal intervals from top to bottom, wherein the annular blades (1) are divided into a deposition surface (11) and a non-deposition surface (12);
s2, separating two nickel anodes (3) on two sides of an electroplating bath (4) through separators (31), filling electroplating solution between the two separators (31), and rotatably arranging the deposition tool (2) in the electroplating solution, wherein diamond particles are added into the electroplating solution, and the non-deposition surface (12) is covered by a baffle (5) and serves as a circuit interface of a cathode;
s3, controlling the PH, current density and rotation frequency of the electroplating solution in the electroplating process to enable diamond particles to grow on the deposition surface (11) uniformly;
in the step S2, the deposition tool (2) performs vortex stirring on the plating solution synchronously during rotation.
2. The method of claim 1, wherein the method comprises the following steps: deposit frock (2) including rotating bull stick (21) and the setting of setting on rotating electrical machines (101) chassis (22) of bull stick (21) bottom, the top detachable of bull stick (21) is connected on rotating electrical machines (101), bull stick (21) from the top down interval distribution has a plurality of screw surfaces (211), smooth surface (212), install annular blade (1) on smooth surface (212), baffle (5) threaded connection just is used for pressing from both sides tightly fixedly on screw surface (211) annular blade (1).
3. The method of claim 2, wherein the method comprises the following steps: the outside cover on chassis (22) is equipped with impeller dish (6), impeller dish (6) are divided into outer dish (61) and inner disc (62) from outer to interior in proper order, it has a plurality of extending direction vortex blade (621) up to distribute on inner disc (62), the bottom distribution of outer dish (61) has a plurality of extending direction stirring vane (611) down, vortex blade (621) with the extending direction of stirring vane (611) is parallel to each other.
4. The method for preparing a composite deposition layer for a wafer cutting blade according to claim 3, wherein: the spoiler blade (621) is the arcwall face of bending, one of them arcwall face welded fastening of spoiler blade (621) on inner disc (62), the extending direction orientation of another arcwall face of spoiler blade (621) bull stick (21).
5. The method for preparing a composite deposition layer for a wafer cutting blade according to claim 3, wherein: the stirring blades (611) are freely and rotatably arranged at the bottom of the outer disk (61), and the stirring blades (611) are spiral bodies which are far away from the rotating rod (21) in the inclined direction.
6. The method of claim 1, wherein the method comprises the following steps: in the step S3, the plating solution has a pH in the range of 3.5 to 4.5 and a current density in the range of 1.5 to 3.5A/dm2And the rotation frequency is 20Hz-30 Hz.
CN202111184527.0A 2021-10-12 2021-10-12 Preparation method of composite deposition layer of wafer cutting blade Active CN113622013B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010610A (en) * 1996-04-09 2000-01-04 Yih; Pay Method for electroplating metal coating(s) particulates at high coating speed with high current density
US20130056359A1 (en) * 2010-03-24 2013-03-07 Brookhaven Science Associates Llc Apparatus and method for the synthesis and treatment of metal monolayer electrocatalyst particles in batch or continuous fashion
CN110193790A (en) * 2018-02-27 2019-09-03 株式会社迪思科 Electro-deposition grinding tool
CN111441073A (en) * 2020-05-11 2020-07-24 西北工业大学 Plating cavity capable of improving uniformity of Ni-SiC composite plating layer on inner wall of hollow part

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010610A (en) * 1996-04-09 2000-01-04 Yih; Pay Method for electroplating metal coating(s) particulates at high coating speed with high current density
US20130056359A1 (en) * 2010-03-24 2013-03-07 Brookhaven Science Associates Llc Apparatus and method for the synthesis and treatment of metal monolayer electrocatalyst particles in batch or continuous fashion
CN110193790A (en) * 2018-02-27 2019-09-03 株式会社迪思科 Electro-deposition grinding tool
CN111441073A (en) * 2020-05-11 2020-07-24 西北工业大学 Plating cavity capable of improving uniformity of Ni-SiC composite plating layer on inner wall of hollow part

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