CN113584485A - Metal net and its manufacturing method - Google Patents
Metal net and its manufacturing method Download PDFInfo
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- CN113584485A CN113584485A CN202010363342.5A CN202010363342A CN113584485A CN 113584485 A CN113584485 A CN 113584485A CN 202010363342 A CN202010363342 A CN 202010363342A CN 113584485 A CN113584485 A CN 113584485A
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- Prior art keywords
- metal
- substrate
- layer
- manufacturing
- mesh
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A metal net and a method for manufacturing the same. The manufacturing method of the metal mesh comprises the steps of providing a substrate; forming a metal base material on the surface of the substrate; covering the photoresist layer on the metal base material, and forming a reticular pattern on the photoresist layer through exposure and development processes; performing an etching process to remove the metal substrate not covered by the photoresist layer; removing the photoresist layer; forming a metal layer to cover the metal substrate; and peeling from the substrate to form a metal mesh. Thus, a metal net with thinner overall thickness is formed. In addition, the metal layer is formed after the photoresistive layer is removed to cover the metal substrate, and the size of the opening on the formed metal mesh can be controlled by controlling the forming thickness of the metal layer. Furthermore, the production yield can be improved by manufacturing the metal nets with the same specification or different specifications on the two sides of the substrate respectively.
Description
Technical Field
The invention relates to a metal net and a manufacturing method thereof, in particular to a thin metal net and a manufacturing method thereof.
Background
The traditional metal net is generally formed into a woven metal net in a weaving mode during manufacturing. However, the specification of the metal mesh manufactured by the weaving method is limited by the diameter of the metal wire and the process bottleneck, and the metal mesh cannot be made thinner in thickness and denser in density.
For example, if the metal mesh is formed by a weaving method, since each metal wire will produce an area with overlapping interweaving during the weaving process, the thickness of the area will be twice as thick as the metal wire, so that the overall thickness is limited by the thickness of the metal wire, and cannot be thinner.
Disclosure of Invention
In view of the above, an object of the present application is to provide a method for manufacturing a metal mesh, including: providing a substrate; forming a metal base material on the surface of the substrate; covering the photoresist layer on the metal base material, and forming a reticular pattern on the photoresist layer through exposure and development processes; performing an etching process to remove the metal substrate not covered by the photoresist layer; removing the photoresist layer; forming a metal layer to cover the metal substrate; and peeling from the substrate to form a metal mesh.
Further, another object of the present application is to provide a method for manufacturing a metal mesh, including: providing a substrate with a first surface and a second surface which are opposite; respectively forming metal base materials on the first surface and the second surface of the substrate; covering the photoresist layer on each metal substrate, and forming a mesh pattern on each photoresist layer through exposure and development processes; performing an etching process to remove the metal substrate not covered by the photoresist layer; removing the photoresist layer; forming a metal layer to cover each metal substrate; and stripping from the substrate to form two metal nets.
Therefore, through the process, the problem that the thickness of the metal wire interweaving and overlapping area is thickened in the traditional metal wire weaving process is solved because the image transfer process is matched with the etching and forming process, and the whole thickness can be thinner. In addition, the metal layer is formed after the photoresistive layer is removed to cover the metal substrate, and the size of the opening on the formed metal mesh can be controlled by controlling the forming thickness of the metal layer. Furthermore, the metal meshes with the same or different specifications can be manufactured on the two sides of the substrate, so that the yield is improved, and the manufacturing time is shortened.
In some embodiments, the metal layer is formed by electroplating and covers the metal substrate.
In some embodiments, the metal layer is formed by chemical deposition and covers the metal substrate.
In some embodiments, the metal substrate and the metal layer are formed using the same metal.
In some embodiments, the mesh pattern of the first surface side is different from the mesh pattern of the second surface side.
In addition, the present application provides a metal mesh manufactured by the manufacturing method according to the above embodiments. The metal net can be applied to a desired place by transferring the carrier, for example, by using a PET sheet as the carrier, and the metal net can be transferred to an electronic product for heat dissipation.
In some embodiments, the metal mesh has a thickness of 5 to 50 μm.
In some embodiments, the metal mesh has a plurality of openings, and the minimum diameter of the openings is greater than or equal to 10 μm.
In some embodiments, the metal mesh has a plurality of openings, and a center distance between adjacent openings is greater than or equal to 30 μm.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
Fig. 1 is a schematic structural diagram (one) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram (ii) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram (iii) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram (iv) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram (v) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram (vi) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram (seven) of a method for manufacturing a metal mesh according to an embodiment of the present invention;
fig. 8 is a flowchart of a method of manufacturing a metal mesh according to an embodiment of the present invention; and
fig. 9 is a partially enlarged schematic view of a metal mesh according to an embodiment of the present invention.
Wherein the reference numerals
100: metal net
10 base plate
11 first surface
12 second surface
20 metal base material
30 photoresist layer
31, slotting
40 metal layer
50, opening a hole
Distance D
d center distance
t is thickness
Step S10, providing a substrate
Step S12, forming metal base material on the first surface and the second surface of the substrate respectively
Step S14, covering a photoresist layer on each metal substrate, and exposing and developing each photoresist layer to form a mesh pattern
Step S16, an etching process is performed to remove the metal substrate not covered by the photoresist layer
Step S18 for removing the photoresist layer
Step S20, forming a metal layer to cover the metal substrate
Step S22 of peeling off the substrate to form two metal nets
Detailed Description
The invention will be described in detail with reference to the following drawings, which are provided for illustration purposes and the like:
referring to fig. 1 to 8, fig. 1 to 7 are schematic structural diagrams (a) to (seventh) illustrating a method for manufacturing a metal mesh according to an embodiment of the present invention, and fig. 8 is a flowchart illustrating the method for manufacturing the metal mesh according to the embodiment of the present invention. As shown in fig. 1 and 8, the method for manufacturing a metal mesh 100 (for example, as shown in fig. 9) of the present embodiment includes providing a substrate 10 (step S10), where the substrate 10 has a first surface 11 and a second surface 12 opposite to each other.
Next, the metal base 20 is formed on the first surface 11 and the second surface 12 of the substrate 10, respectively (step S12). As shown in fig. 2, in the present embodiment, the peelable metal base material 20 is formed on the first surface 11 and the second surface 12 of the substrate 10, which are located at two opposite sides, respectively, but in other implementation forms, the metal base material 20 may be formed only on the first surface 11 or the second surface 12 of the substrate 10. That is, the metal nets 100 of the same or different specifications may be simultaneously manufactured by using the first surface 11 and the second surface 12 of the substrate 10, or the metal nets 100 may be manufactured by using only a single side surface.
The metal base material 20 to be formed may be any pure metal material or composite metal material, and a suitable metal material may be selected according to the intended use. For example, in the present embodiment, the metal mesh 100 is applied to heat dissipation of electronic components, and therefore copper is taken as an example for material selection.
Referring to fig. 3 and 8, a photoresist layer 30 is covered on each metal substrate 20, and each photoresist layer 30 is patterned into a mesh pattern by exposure and development processes (step S14). The step of covering the photoresist layer 30 and forming the mesh pattern by the exposure and development processes is to form the required mesh pattern by using the existing processes, such as the photolithography process applied to the circuit board, by attaching a dry film photoresist to form the photoresist layer or by coating a wet film photoresist to form the photoresist layer, and then by using the positive photoresist or negative photoresist technique, which will not be described herein again. The mesh pattern to be formed may be designed according to the specification of the metal mesh 100 to be finally formed. For example, as shown in fig. 3, a plurality of slots 31 are formed in the photoresist layer 30, and the slots 31 correspond to positions where openings 50 are to be formed in the metal mesh 100. And each slot 31 may be designed in shape, spacing, etc. depending on the desired size of the opening 50. Further, the mesh patterns formed on the first surface 11 side and the second surface 12 side may be the same or different mesh patterns according to requirements.
Referring to fig. 4 and 8, after step S14, an etching process is performed to remove the metal substrate 20 not covered by the photoresist layer 30 (step S16). As shown in fig. 4, after the etching process, the metal base material 20 not covered by the photoresist layer 30 is removed from the substrate 10, and only the metal base material 20 of the metal mesh 100 to be formed remains.
Referring to fig. 5 and 8, after step S16, step S18 is performed: the photoresist layer 30 is removed. As can be seen from fig. 5, after removing the photoresist layer 30, the metal base material 20 forming the desired mesh pattern is left on the substrate 10.
As shown in fig. 6 and 8, after step S18, step S20 is executed: a metal layer 40 is formed to cover the metal substrate 20. In the present embodiment, the metal layer 40 is formed by electroplating and covers the metal substrate 20. In other embodiments, the metal substrate 20 may be formed and coated by chemical deposition. The thickness of the metal layer 40 can be controlled by electroplating or chemical deposition to form the required thickness of the metal mesh 100, and the distance D between the slots 31 in the mesh pattern, i.e. the aperture of the openings 50 of the metal mesh 100 to be formedSize (see fig. 9). Thus, the size of the opening 50 can be not limited to the bottleneck of the mesh pattern in step S14, and the diameter of the opening 50 can be reduced by controlling the thickness of the metal layer 40 by electroplating or chemical depositionTo achieve the desired pore sizeAnd (4) size.
The metal material used for forming the metal layer 40 may be the same metal material as the metal base 20 or may be a different metal material. The metal layer 40 may be formed of any suitable metal according to the application requirements.
Finally, as shown in fig. 7 and 8, after the step S20, the step S22 is executed: peeled from the substrate 10 to form two metal meshes 100. The metal mesh 100 peeled from the substrate 10 may be transferred to a carrier (e.g., a PET sheet) and then applied as required.
Through the process, the image transfer process is matched with the etching and forming process, so that the problem that the thickness of the metal wire interweaving and overlapping area is thickened in the traditional metal wire weaving process is solved, and the overall thickness can be thinner. In addition, by forming the metal layer 40 to cover the metal substrate 20 after removing the photoresist layer 30, the aperture of the opening 50 on the metal mesh 100 can be controlled by controlling the forming thickness of the metal layer 40Further, the metal nets 100 of the same or different specifications may be formed on both sides of the substrate 10, so that the yield may be improved.
Next, referring to fig. 7 and 9, fig. 9 is a partially enlarged schematic view of a metal mesh according to an embodiment of the invention. The thickness t of the metal mesh 100 formed by the above-mentioned manufacturing method is in the range of 5 to 50 μm. The thickness t is the total thickness of the metal mesh 100, i.e. the sum of the metal base material 20 and the metal layer 40. Since the wire diameter of the existing metal wires is about 0.025mm in the minimum dimension, if the metal wires of this dimension are woven to form a metal mesh, the thickness of the metal mesh in the overlapping area will be at least 0.05mm (50 μm). The thickness t of the metal net 100 manufactured by the manufacturing method of the present embodiment can be less than 50 μm, even to 5 μm, which is much smaller than the thickness that can be achieved by weaving the metal wires, so that the overall thickness of the metal net 100 can be thinner.
In addition, as shown in fig. 9, the metal mesh 100 formed in the present embodiment has a plurality of openings 50, and the shape of the openings 50 is circular, but the invention is not limited thereto. The shape of the opening 50 may be any shape, such as rectangular, polygonal, etc. The minimum aperture of the opening 50 formed by the above-mentioned manufacturing methodIt is 10 μm or more. Actual pore diameterThe size can be designed as desired, and as mentioned above, the aperture of the opening 50 can be changed by adjusting the thickness of the metal layer 40 by adjusting the plating time or the chemical deposition timeThe size of the particles can reach the specification of 10 μm.
Further, the center distance d between the adjacent openings 50 of the metal mesh 100 is not less than 30 μm. Likewise, the center distance d between adjacent openings 50 can also be adjusted as desired. The metal mesh 100 formed by the manufacturing method of the present embodiment can achieve a minimum center-to-center distance d of 30 μm between adjacent openings 50.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A method of manufacturing a metal mesh, comprising:
providing a substrate;
forming a metal base material on one surface of the substrate;
covering a photoresist layer on the metal substrate, and forming a mesh pattern on the photoresist layer by an exposure and development process;
performing an etching process to remove the metal substrate not covered by the photoresist layer;
removing the photoresist layer;
forming a metal layer to cover the metal substrate; and
peeling off the substrate to form the metal net.
2. A method of manufacturing a metal mesh, comprising:
providing a substrate having a first surface and a second surface opposite to each other;
respectively forming a metal base material on the first surface and the second surface of the substrate;
covering a photoresist layer on each metal substrate, and forming a mesh pattern on each photoresist layer by an exposure and development process;
performing an etching process to remove the metal substrates not covered by the photoresist layers;
removing the photoresist layer;
forming a metal layer to cover each metal substrate; and
peeling off the substrate to form two metal nets.
3. A method of manufacturing a metal net according to claim 1 or claim 2, wherein the metal layer is formed by an electroplating method and covers the metal base material.
4. A method of manufacturing a metal mesh according to claim 1 or claim 2, wherein the metal layer is formed by a chemical deposition process and covers the metal substrate.
5. The method of claim 1 or 2, wherein the metal substrate and the metal layer are formed using the same metal.
6. The method of manufacturing a metal net according to claim 1 or 2, wherein the net pattern on the first surface side is different from the net pattern on the second surface side.
7. A metal net produced by the method for producing a metal net according to any one of claims 1 to 6.
8. The metal mesh of claim 7, wherein the metal mesh has a thickness of 5 to 50 μm.
9. The expanded metal of claim 7, wherein the expanded metal has a plurality of openings, and the minimum diameter of the openings is greater than or equal to 10 μm.
10. The expanded metal of claim 7, wherein the expanded metal has a plurality of openings, and a center distance between adjacent openings is greater than or equal to 30 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010363342.5A CN113584485A (en) | 2020-04-30 | 2020-04-30 | Metal net and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010363342.5A CN113584485A (en) | 2020-04-30 | 2020-04-30 | Metal net and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
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CN113584485A true CN113584485A (en) | 2021-11-02 |
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CN202010363342.5A Pending CN113584485A (en) | 2020-04-30 | 2020-04-30 | Metal net and its manufacturing method |
Country Status (1)
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2020
- 2020-04-30 CN CN202010363342.5A patent/CN113584485A/en active Pending
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