CN113574798A - 一种可变增益放大器及相控阵系统 - Google Patents

一种可变增益放大器及相控阵系统 Download PDF

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CN113574798A
CN113574798A CN201880100545.6A CN201880100545A CN113574798A CN 113574798 A CN113574798 A CN 113574798A CN 201880100545 A CN201880100545 A CN 201880100545A CN 113574798 A CN113574798 A CN 113574798A
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transistor
circuit
cascode
gain
common
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CN113574798B (zh
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关允超
卢磊
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G5/00—Tone control or bandwidth control in amplifiers
    • H03G5/16—Automatic control
    • H03G5/24—Automatic control in frequency-selective amplifiers
    • H03G5/28—Automatic control in frequency-selective amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45481—Indexing scheme relating to differential amplifiers the CSC comprising only a direct connection to the supply voltage, no other components being present
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/103—Gain control characterised by the type of controlled element being an amplifying element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/30—Gain control characterized by the type of controlled signal
    • H03G2201/307—Gain control characterized by the type of controlled signal being radio frequency signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Abstract

一种可变增益放大器以及相控阵接收机，其中，所述增益放大器(30,40)包括：Cascode电路(31,41)，用于输出可调电流至输出匹配网络(33,43)，其中，所述Cascode电路(31,41)为共源共栅电路，或者共射极共基极电路；以及可变电容电路(32,42)，分别与Cascode电路(31,41)和所述输出匹配网络(33,43)耦合于第一节点，用于调整所述Cascode电路(31,41)相对于所述输出匹配网络(33,43)的寄生电容。当VGA(30,40)进行增益切换时，通过调节可变电容电路的容值，对在增益切换时，Cascode电路(31,41)相对于第一节点引起的寄生电容变化进行补偿，从而在增益切换前后，使得从第一节点看到的寄生电容大致维持恒定，相应的，VGA(30,40)最终输出的匹配也维持一致。通过这种方式，在VGA(30,40)进行切换增益时，可以在较宽的频带内保持增益步进和相位的一致性。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201880100545.6A 2018-12-29 2018-12-29 一种可变增益放大器及相控阵系统 Active CN113574798B (zh)

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Cited By (2)

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CN114844473A (zh) * 2022-04-11 2022-08-02 电子科技大学 一种采用补偿电容技术的双控制位型可变增益放大器
CN116032269A (zh) * 2023-03-28 2023-04-28 中国电子科技集团公司第十研究所 一种电流量化矢量插值阵列和有源矢量调制架构

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CN116886061B (zh) * 2023-09-06 2023-11-28 成都通量科技有限公司 一种低附加相移的单端可变增益放大器

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Publication number Priority date Publication date Assignee Title
CN114844473A (zh) * 2022-04-11 2022-08-02 电子科技大学 一种采用补偿电容技术的双控制位型可变增益放大器
CN114844473B (zh) * 2022-04-11 2023-06-02 电子科技大学 一种采用补偿电容技术的双控制位型可变增益放大器
CN116032269A (zh) * 2023-03-28 2023-04-28 中国电子科技集团公司第十研究所 一种电流量化矢量插值阵列和有源矢量调制架构
CN116032269B (zh) * 2023-03-28 2023-07-25 中国电子科技集团公司第十研究所 一种电流量化矢量插值阵列和有源矢量调制架构

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EP3893392A1 (en) 2021-10-13
CN113574798B (zh) 2023-03-03
EP3893392A4 (en) 2021-12-15
US20210328565A1 (en) 2021-10-21
WO2020133524A1 (zh) 2020-07-02

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